CN202187089U - Rapid feedback silicone fluid overflow monitoring device - Google Patents
Rapid feedback silicone fluid overflow monitoring device Download PDFInfo
- Publication number
- CN202187089U CN202187089U CN2011202758788U CN201120275878U CN202187089U CN 202187089 U CN202187089 U CN 202187089U CN 2011202758788 U CN2011202758788 U CN 2011202758788U CN 201120275878 U CN201120275878 U CN 201120275878U CN 202187089 U CN202187089 U CN 202187089U
- Authority
- CN
- China
- Prior art keywords
- crucible
- silicon
- monitoring device
- insulation material
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000012806 monitoring device Methods 0.000 title claims abstract description 13
- 239000012530 fluid Substances 0.000 title abstract 5
- 229920001296 polysiloxane Polymers 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 42
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 42
- 239000010703 silicon Substances 0.000 claims abstract description 42
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 32
- 239000010439 graphite Substances 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000010453 quartz Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000012774 insulation material Substances 0.000 claims abstract description 12
- 241000209456 Plumbago Species 0.000 claims description 20
- 239000007788 liquid Substances 0.000 claims description 17
- 238000002844 melting Methods 0.000 claims description 15
- 230000008018 melting Effects 0.000 claims description 15
- 229910045601 alloy Inorganic materials 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000011214 refractory ceramic Substances 0.000 claims description 2
- 239000003870 refractory metal Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 229910002804 graphite Inorganic materials 0.000 abstract description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 3
- 238000005336 cracking Methods 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 238000005266 casting Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 210000004369 blood Anatomy 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000246 remedial effect Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
The utility model relates to a rapid feedback silicon fluid overflow monitoring device. The rapid feedback silicone fluid overflow monitoring device comprises a graphite crucible and a quartz crucible, wherein the graphite crucible consists of a graphite crucible side plate and a graphite crucible bottom plate; the quartz crucible is placed inside the graphite crucible; a crucible support block and a metal fuse with a controller are arranged below the graphite crucible bottom plate; a bracket made of a high-temperature-resistant insulation material is attached to the periphery of the crucible support block; and the metal fuse is fixed to the bracket made of the high-temperature-resistant insulation material. In the rapid feedback silicone fluid overflow monitoring device, when polysilicon is ingoted and when the overflow of silicon fluid caused by the cracking of the quartz crucible is caused, the overflow can be discovered in time and an ingot furnace is quenched, so that security risks caused by the leakage of silicon can be avoided to the maximum.
Description
Technical field
The utility model relates to the solar battery casting ingot technical field, the quick feedback silicon hydrorrhea flow monitoring device that uses in especially a kind of ingot furnace.
Background technology
In the photovoltaic field, utilizing the method production polycrystal silicon ingot of directional freeze is the method that generally adopts, and its ultimate principle is: polycrystalline silicon raw material is placed in the quartz ceramic crucible, is placed in the specific thermal field system, be heated to fully and melt; Bottom from crucible begins to cool down then, and silicon solution begins crystallization in crucible bottom, gradually upwards growth (solidifying); After accomplishing process of growth.Easy deformation during quartz crucible high temperature is made plumbago crucible and is supported so generally outside quartz crucible, use built-up type graphite backplate, fix with the graphite bolt between the graphite backplate, so joint all has the slit.Since quartz crucible possibly exist naked eyes and instrument can't detected defective, may become focal point of stress during high temperature and cause and break, cause Lou silicon incident; Silicon liquid can flow out from the graphite cake slit;,, flow to and place the placing on the Metal Melting fracture of wire on the resistance hot material of whole bottom of furnace body toward dirty along the crucible back-up block through the base plate pod apertures of heat insulating cage; Wire fusing then produces silicon hydrorrhea stream and reports to the police.And in this process, the mobile overall distance is about 55cm from top to bottom for silicon liquid, and silicon liquid is by way of back-up block, end warming plate; Flow process is uncontrollable; Probably can produce a large amount of overflows and just drop on fusible link, and the Metal Melting circuit wire position that is laid on bottom of furnace body exists in deviation or the life-time service displacement in time to find, can not guarantee that silicon liquid accurately and timely drops on the fusible link; When silicon liquid is assembled in a large number; Burn through furnace bottom very likely, as run into the water-cooled pipeline, then a large amount of gathering of water vapour is prone to cause security incident.This also is the problem that the polycrystalline furnace user relatively pays close attention to; Also there are some patents to leak silicon danger and done research in minimizing; Like the patent No. 200710070536,200810202819,200710070537,200920029606,200720113619; Effusive silicon liquid is carried out water conservancy diversion, accepts and takes sfgd. at furnace bottom; Really played to a certain extent and reduced the effect of leaking the silicon risk, but all be the remedial measures after producing a large amount of overflows, thereby can not in time find to avoid to the full extent this type of risk.
The utility model content
The technical problem that the utility model will solve is: provide a kind of and produce when polycrystalline silicon ingot casting that quartz crucible breaks and when causing silicon hydrorrhea stream; Can in time find and let the ingot furnace chilling, thereby avoid to the full extent because of leaking the monitoring device of the security risk that silicon produces.
The utility model solves the technical scheme that its technical problem adopted: a kind of quick feedback silicon hydrorrhea flow monitoring device; Comprise the plumbago crucible that constitutes by plumbago crucible side plate and plumbago crucible base plate and be placed on the inboard quartz crucible of plumbago crucible; Described plumbago crucible floor below is provided with the Metal Melting fracture of wire of crucible back-up block and tape-controller; With the high-temperature insulation material support, described Metal Melting fracture of wire is fixed on the high-temperature insulation material support around the described crucible back-up block.
The high-temperature insulation material support can be quartz, silicon nitride or refractory ceramics etc.; The Metal Melting fracture of wire can be refractory metal or alloy; Normal working temperature reaches more than 1500 ℃, like silicon-base alloy, tungsten-bast alloy, titanium base alloy, nickel-base alloy, molybdenum base alloy etc., but is not limited to above kind; As long as can satisfy secular high-temperature work environment, can be corroded fusing by silicon liquid again.
Graphite and silicon all conduct electricity under the high temperature, for fear of forming the loop, need the support of high-temperature insulation material as support fixing metal fusible link, and the selection of fusible link also have requirement, can be under 1500 ℃ of high temperature can life-time service, can be corroded by silicon liquid again and fuse.Like the silicon tungstenalloy, select the silicon tungstenalloy of certain alloy ratio, just can guarantee ability life-time service under the high temperature, corroded fusing by silicon liquid easily again.1534 ℃ of the fusing points of iron; It is passable to adopt traditional mode to be placed on furnace bottom, and the temperature low owing to stove is lower, does not have endurance issues; As be placed near the crucible back-up block then not all right; Can't life-time service, because back-up block is in the high temperature more than 1000 ℃ for a long time, and can reach more than 1400 ℃ when changing material.The Metal Melting fracture of wire also can pass through suitable adjustment and be fixed on the plumbago crucible base plate except being fixed on the crucible back-up block.
The beneficial effect of the utility model is to have solved the defective that exists in the background technology, when producing silicon hydrorrhea stream; Because back-up block is located in the crucible bottom, silicon liquid at first will flow on the Metal Melting fracture of wire, and fusible link is corroded fusing by high temperature silicon liquid; No longer constitute the loop and then produce warning, when a small amount of overflow of silicon liquid, just can come to light like this, can feed back and cool off body of heater rapidly; Effectively avoided the generation of a large amount of silicon hydrorrhea stream situation, made the ingot casting process eliminate potential safety hazard.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the utility model is further specified.
Fig. 1 is the structural representation of the utility model;
Fig. 2 is the perspective view of the utility model;
Among the figure: 1, quartz crucible; 2, plumbago crucible side plate; 3, plumbago crucible base plate; 4, crucible back-up block; 5, insulating material support; 6, Metal Melting fracture of wire.
Embodiment
Combine accompanying drawing and preferred embodiment that the utility model is done further detailed explanation now.These accompanying drawings are the synoptic diagram of simplification, the substruction of the utility model only is described in a schematic way, so it only show the formation relevant with the utility model.
A kind of quick feedback silicon hydrorrhea flow monitoring device as shown in Figure 1; Comprise the plumbago crucible that constitutes by plumbago crucible side plate 2 and plumbago crucible base plate 3 and be placed on the inboard quartz crucible 1 of plumbago crucible; The Metal Melting fracture of wire 6 of crucible back-up block 4 and tape-controller; With high-temperature insulation material support 5, Metal Melting fracture of wire 6 is fixed on the high-temperature insulation material support 5 around the back-up block 4.When silicon liquid generation overflow, because back-up block 4 is located in the crucible bottom, silicon liquid at first flows out from the connection slit of crucible graphite backplate; And along the plumbago crucible base plate toward current downflow, at first will flow on the Metal Melting fracture of wire, fusible link is corroded fusing by high temperature silicon liquid; No longer constitute the loop and then produce warning, when a small amount of overflow of silicon liquid, just can come to light like this, can feed back and cool off body of heater rapidly; Effectively avoided the generation of a large amount of silicon hydrorrhea stream situation, made the ingot casting process eliminate potential safety hazard.
The just embodiment of describing in the above specification sheets of the utility model; The various fleshes and bloods that illustrate not the utility model constitute restriction; Under the those of ordinary skill of technical field after having read specification sheets can to before described embodiment make an amendment or be out of shape, and do not deviate from the essence and the scope of utility model.
Claims (4)
1. one kind is fed back silicon hydrorrhea flow monitoring device fast; Comprise the plumbago crucible that constitutes by plumbago crucible side plate (2) and plumbago crucible base plate (3) and be placed on the inboard quartz crucible (1) of plumbago crucible; It is characterized in that: described plumbago crucible base plate (3) below is provided with the Metal Melting fracture of wire (5) of crucible back-up block (4) and tape-controller; With high-temperature insulation material support (5), described Metal Melting fracture of wire (6) is fixed on the high-temperature insulation material support (5) described crucible back-up block (4) all around.
2. quick feedback silicon hydrorrhea flow monitoring device as claimed in claim 1, it is characterized in that: described high-temperature insulation material support (5) is quartz holder, silicon nitride support or refractory ceramics support.
3. quick feedback silicon hydrorrhea flow monitoring device as claimed in claim 1 is characterized in that: described Metal Melting fracture of wire (6) is for being corroded the refractory metal silk or the alloy silk of fusing by silicon liquid.
4. quick feedback silicon hydrorrhea flow monitoring device as claimed in claim 1 is characterized in that: described Metal Melting fracture of wire (6) is fixed on the plumbago crucible base plate (3) with high-temperature insulation material support (5).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202758788U CN202187089U (en) | 2011-07-30 | 2011-07-30 | Rapid feedback silicone fluid overflow monitoring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011202758788U CN202187089U (en) | 2011-07-30 | 2011-07-30 | Rapid feedback silicone fluid overflow monitoring device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202187089U true CN202187089U (en) | 2012-04-11 |
Family
ID=45918550
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011202758788U Expired - Lifetime CN202187089U (en) | 2011-07-30 | 2011-07-30 | Rapid feedback silicone fluid overflow monitoring device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202187089U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102995109A (en) * | 2012-12-24 | 2013-03-27 | 英利能源（中国）有限公司 | Single crystal furnace |
| CN103255470A (en) * | 2013-06-06 | 2013-08-21 | 英利集团有限公司 | Silicon ingot furnace and leakage detection device thereof |
| CN105970287A (en) * | 2016-05-23 | 2016-09-28 | 大工（青岛）新能源材料技术研究院有限公司 | Adjustable graphite crucible |
-
2011
- 2011-07-30 CN CN2011202758788U patent/CN202187089U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102995109A (en) * | 2012-12-24 | 2013-03-27 | 英利能源（中国）有限公司 | Single crystal furnace |
| CN102995109B (en) * | 2012-12-24 | 2015-09-09 | 英利能源（中国）有限公司 | A kind of single crystal growing furnace |
| CN103255470A (en) * | 2013-06-06 | 2013-08-21 | 英利集团有限公司 | Silicon ingot furnace and leakage detection device thereof |
| CN103255470B (en) * | 2013-06-06 | 2016-02-10 | 英利集团有限公司 | Silicon ingot furnace and leak detecting device thereof |
| CN105970287A (en) * | 2016-05-23 | 2016-09-28 | 大工（青岛）新能源材料技术研究院有限公司 | Adjustable graphite crucible |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102877117B (en) | Ingot furnace thermal field structure based on multi-heater and operation method | |
| RU2011101453A (en) | SYSTEMS AND METHODS OF GROWING SINGLE CRYSTAL SILICON BARS BY DIRECTIONAL CURING | |
| CN205711031U (en) | A kind of single crystal growing furnace | |
| CN105951169B (en) | A kind of big gradient visualization tubular type monocrystal growing furnace | |
| CN202187089U (en) | Rapid feedback silicone fluid overflow monitoring device | |
| CN202989351U (en) | Ingot furnace thermal field structure based on multiple heaters | |
| CN102877129A (en) | Crystalline silicon and preparation method thereof | |
| CN101220502B (en) | Vertical Bridgman growth furnace and method of optimizing temperature field inside furnace | |
| CN202175735U (en) | Immediate feedback device for overflow of silicon liquid | |
| CN203869512U (en) | Adhesion-preventing self-heating furnace door of boron diffusion furnace | |
| CN207109142U (en) | Crystal growing furnace | |
| CN102912414B (en) | A kind of polycrystalline silicon ingot or purifying furnace and crucible thereof | |
| CN104294358B (en) | The preparation method and polycrystal silicon ingot of a kind of polycrystal silicon ingot | |
| CN103409789B (en) | A kind of Polysilicon directional solidification device | |
| CN102242390A (en) | Heating method for producing similar single crystal silicon ingot materials by using casting method | |
| CN104419978A (en) | Guide cylinder used in single crystal furnace | |
| CN105586634A (en) | Heater for czochralski crystal growing furnace thermal field and application method | |
| CN204281893U (en) | A kind of directional solidification thermal-preservation thermal field | |
| CN103334154A (en) | Preparation method of polycrystalline silicon ingots based on thermal exchange technology | |
| CN207016891U (en) | A kind of cooling device of polycrystalline ingot furnace for oversize silicon ingot | |
| CN202936515U (en) | Kyropoulos-method crystal growing furnace | |
| CN203653746U (en) | Molten silicon leakage protection device for single crystal furnace | |
| CN103741205B (en) | Full monocrystalline silicon cast ingot stove | |
| CN102242391B (en) | Heater improvement apparatus in ingot furnace producing quasi-single crystal silicon with casting method | |
| CN201801632U (en) | Guide cylinder of single crystal furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee after: TRINASOLAR Co.,Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: trina solar Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120411 |