CN202175735U - Immediate feedback device for overflow of silicon liquid - Google Patents

Immediate feedback device for overflow of silicon liquid Download PDF

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Publication number
CN202175735U
CN202175735U CN2011202756481U CN201120275648U CN202175735U CN 202175735 U CN202175735 U CN 202175735U CN 2011202756481 U CN2011202756481 U CN 2011202756481U CN 201120275648 U CN201120275648 U CN 201120275648U CN 202175735 U CN202175735 U CN 202175735U
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CN
China
Prior art keywords
metal tray
silicon liquid
silicon
feedback device
overflow
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
CN2011202756481U
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Chinese (zh)
Inventor
叶宏亮
陈雪
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Trina Solar Co Ltd
Original Assignee
Changzhou Trina Solar Energy Co Ltd
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Filing date
Publication date
Application filed by Changzhou Trina Solar Energy Co Ltd filed Critical Changzhou Trina Solar Energy Co Ltd
Priority to CN2011202756481U priority Critical patent/CN202175735U/en
Application granted granted Critical
Publication of CN202175735U publication Critical patent/CN202175735U/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Abstract

The utility model relates to an immediate feedback device for overflow of silicon liquid comprising a metal tray, a pressure sensor and thermal resistance material which are arranged at the bottom of an ingot furnace, wherein the metal tray is arranged above the steel wall at the furnace bottom; the center of the metal tray is connected with the pressure sensor; and the metal tray is completely covered by the thermal resistance material. In case of low overflow of the silicon liquid, the silicon liquid quickly flows out of a lower heat insulation plate and drops on the thermal resistance material at the furnace bottom due to very high temperature in a heat insulation cage in the melting process. The thermal resistance material is supported by the metal tray, the pressure sensor can immediately monitor the corresponding pressure change for timely alarm. Therefore, the low overflow of the silicon liquid can be timely found for feedback and furnace body cooling, the high overflow of the silicon liquid is effectively avoided, and the potential safety hazard in the ingot casting process is eliminated.

Description

Silicon hydrorrhea stream immediate feedback device
Technical field
The utility model relates to the solar battery casting ingot technical field, the silicon hydrorrhea stream immediate feedback device that uses in especially a kind of ingot furnace.
Background technology
In the photovoltaic field, utilizing the method production polycrystal silicon ingot of directional freeze is the method that generally adopts, and its ultimate principle is: polycrystalline silicon raw material is placed in the quartz ceramic crucible, is placed in the specific thermal field system, be heated to fully and melt; Bottom from crucible begins to cool down then, and silicon solution begins crystallization in crucible bottom, gradually upwards growth (solidifying); After accomplishing process of growth.Easy deformation during quartz crucible high temperature is made plumbago crucible and is supported so generally outside quartz crucible, use built-up type graphite backplate, fix with the graphite bolt between the graphite backplate, so joint all has the slit.Since quartz crucible possibly exist naked eyes and instrument can't detected defective, may become focal point of stress during high temperature and cause and break, cause Lou silicon incident.Because existing technology is to lean on the silicon flow to hinder on the Metal Melting fracture of wire on the hot material to bottom of furnace body, the fuse metal silk produces silicon hydrorrhea stream and reports to the police.And in this process, silicon liquid flows from top to bottom after passing down thermal baffle, because whole furnace wall is to adopt water-cooled; If the minor amount of silicon flow goes out cooling rapidly; So just be difficult to have only the fusing of the wire on the resistance hot material when the silicon flow quantity reaches certain value, could fuse wire.And there is discovery in time of displacement in deviation or the life-time service in the Metal Melting circuit wire position that is laid on bottom of furnace body; Can not guarantee that silicon liquid accurately and timely flows on fusible link; When silicon liquid is assembled in a large number; Burn through furnace bottom very likely, as run into the water-cooled pipeline, then a large amount of gathering of water vapour is prone to cause security incident.This also is the problem that the polycrystalline furnace user relatively pays close attention to; Also there are some patents to leak silicon danger and done research in minimizing; Like the patent No. 200710070536,200810202819,200710070537,200920029606,200720113619, effusive silicon liquid is carried out water conservancy diversion, accepts and takes sfgd. at furnace bottom; Really played to a certain extent and reduced the effect of leaking the silicon risk; But all be the remedial measures after producing a large amount of overflows, thereby can not in time find to avoid to the full extent this type of risk.
The utility model content
The technical problem that the utility model will solve is: produce when polycrystalline silicon ingot casting that quartz crucible breaks and when causing silicon hydrorrhea stream, can in time find and let the ingot furnace chilling, thereby avoided to the full extent because of leaking the security risk that silicon produces.
The utility model solves the technical scheme that its technical problem adopted: a kind of silicon hydrorrhea stream immediate feedback device; Comprise the metal tray, pressure transmitter and the resistance hot material that are arranged on the ingot furnace bottom; Described metal tray places furnace bottom steel wall top; The metal tray center is connected with pressure transmitter, and the resistance hot material covers metal tray fully.
Metal tray places 1-80mm place, furnace bottom steel wall top, and the metal tray center links to each other with pressure transmitter, and pressure transmitter is smaller or equal to 100g to the resolving power of weight, and the resistance hot material covers metal tray fully.Metal tray can adopt the good and on-deformable materials of heat conduction such as steel and alloy thereof, and fusing point is greater than 800 ℃, and metal tray is not owing to self adorn water cooling plant, need be near the water cooled furnace wall, but can not contact, if contact can influence pressure sensor monitoring.Metal tray is one and hinders hot material and need adopt the higher material of fire-resistant point because the silicon liquid temp is higher, can adopt carbon fiber felt, ceramic alumina fiber felt etc.
The beneficial effect of the utility model is to have solved the defective that exists in the background technology, when a small amount of overflow takes place silicon liquid; Because temperature is very high in the melting process heat-insulation cage, silicon liquid can flow out thermal baffle down rapidly, drops on the stove inner bottom part resistance hot material; Because the resistance hot material is held up by metal tray, pressure transmitter can monitor the variation of relevant pressure at once, thereby in time reports to the police; When a small amount of overflow of silicon liquid, just can in time come to light like this; Can feed back and cool off body of heater rapidly, effectively avoid the generation of a large amount of silicon hydrorrhea stream situation, make the ingot casting process eliminate potential safety hazard.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the utility model is further specified.
Fig. 1 is the structural representation of the preferred embodiment of the utility model;
Among the figure: 1, body of heater; 2, heater electrode; 3, heat-insulation cage; 4, crucible wall graphite backplate; 5, quartz crucible; 6, crucible bottom graphite backplate; 7, help back-up block with fixed attention; 8, following thermal baffle; 9, resistance hot material; 10, metal tray; 11, pressure transmitter.
Embodiment
Combine accompanying drawing and preferred embodiment that the utility model is done further detailed explanation now.These accompanying drawings are the synoptic diagram of simplification, the substruction of the utility model only is described in a schematic way, so it only show the formation relevant with the utility model.
A kind of silicon hydrorrhea stream immediate feedback device as shown in Figure 1; Has body of heater 1; Be provided with heat-insulation cage 3 in the described body of heater 1; Have crucible wall graphite backplate 4, quartz crucible 5, crucible bottom graphite backplate 6 in the heat-insulation cage 3 and help back-up block 7 with fixed attention, body of heater is interior, the below of heat-insulation cage is provided with down thermal baffle 8, and body of heater 1 top has heater electrode 2.
Furnace bottom is provided with metal tray 10, pressure transmitter 11 and resistance hot material 9; Baogang to pallet is apart from water floor 5mm, and the diameter of pallet is 9/10 of a body of heater internal diameter, and it is consistent with furnace bottom face shape that pallet is spill; One thick covers tray surface fully for the ceramic alumina fiber felt of 3cm; Pressure transmitter is installed in the furnace bottom central position, contacts with the center extrusion position of pallet, and the precision of transmitter is 20g.When leakage silicon amount reached 20g, system monitoring gave the alarm to the signal of pressure transmitter feedback at once, gets into the chilling program, had effectively avoided the generation of a large amount of silicon hydrorrheas stream situation.

Claims (5)

1. a silicon hydrorrhea flows the immediate feedback device; It is characterized in that: comprise the metal tray (10), pressure transmitter (11) and the resistance hot material (9) that are arranged on the ingot furnace bottom; Described metal tray (10) places furnace bottom steel wall top; Metal tray (10) center is connected with pressure transmitter (11), and resistance hot material (9) covers metal tray (10) fully.
2. silicon hydrorrhea stream immediate feedback device as claimed in claim 1, it is characterized in that: described metal tray (10) places 1-80mm place, furnace bottom steel wall top.
3. silicon hydrorrhea stream immediate feedback device as claimed in claim 1, it is characterized in that: the fusing point of described metal tray (10) is greater than 800 ℃.
4. silicon hydrorrhea as claimed in claim 1 stream immediate feedback device is characterized in that: described pressure transmitter (11) to the resolving power of weight smaller or equal to 100g.
5. silicon hydrorrhea stream immediate feedback device as claimed in claim 1, it is characterized in that: described resistance hot material (9) is carbon fiber felt or ceramic alumina fiber felt.
CN2011202756481U 2011-07-30 2011-07-30 Immediate feedback device for overflow of silicon liquid Expired - Lifetime CN202175735U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2011202756481U CN202175735U (en) 2011-07-30 2011-07-30 Immediate feedback device for overflow of silicon liquid

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2011202756481U CN202175735U (en) 2011-07-30 2011-07-30 Immediate feedback device for overflow of silicon liquid

Publications (1)

Publication Number Publication Date
CN202175735U true CN202175735U (en) 2012-03-28

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102953125A (en) * 2012-11-14 2013-03-06 吴江亿泰真空设备科技有限公司 Sapphire crystal growth furnace leakage alarm system
CN103132135A (en) * 2012-12-13 2013-06-05 苏州工业园区杰士通真空技术有限公司 High-efficient novel sapphire crystal growth system
CN108411363A (en) * 2018-06-11 2018-08-17 晶科能源有限公司 A kind of silicon liquid overflow detection device and method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102953125A (en) * 2012-11-14 2013-03-06 吴江亿泰真空设备科技有限公司 Sapphire crystal growth furnace leakage alarm system
CN103132135A (en) * 2012-12-13 2013-06-05 苏州工业园区杰士通真空技术有限公司 High-efficient novel sapphire crystal growth system
CN108411363A (en) * 2018-06-11 2018-08-17 晶科能源有限公司 A kind of silicon liquid overflow detection device and method
CN108411363B (en) * 2018-06-11 2023-10-31 晶科能源股份有限公司 Silicon liquid overflow detection equipment and method

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C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou

Patentee after: TRINA SOLAR Co.,Ltd.

Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou

Patentee before: trina solar Ltd.

Address after: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou

Patentee after: trina solar Ltd.

Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou

Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd.

CX01 Expiry of patent term
CX01 Expiry of patent term

Granted publication date: 20120328