CN108411363B - Silicon liquid overflow detection equipment and method - Google Patents
Silicon liquid overflow detection equipment and method Download PDFInfo
- Publication number
- CN108411363B CN108411363B CN201810594099.0A CN201810594099A CN108411363B CN 108411363 B CN108411363 B CN 108411363B CN 201810594099 A CN201810594099 A CN 201810594099A CN 108411363 B CN108411363 B CN 108411363B
- Authority
- CN
- China
- Prior art keywords
- liquid level
- metal wire
- silicon liquid
- silicon
- length
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 261
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 173
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 173
- 239000010703 silicon Substances 0.000 title claims abstract description 173
- 238000001514 detection method Methods 0.000 title claims abstract description 108
- 238000000034 method Methods 0.000 title claims abstract description 26
- 229910052751 metal Inorganic materials 0.000 claims abstract description 127
- 239000002184 metal Substances 0.000 claims abstract description 127
- 238000004804 winding Methods 0.000 claims abstract description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 21
- 229920005591 polysilicon Polymers 0.000 claims description 20
- 239000002210 silicon-based material Substances 0.000 claims description 13
- 238000002844 melting Methods 0.000 claims description 12
- 230000008018 melting Effects 0.000 claims description 12
- 238000007711 solidification Methods 0.000 claims description 11
- 230000008023 solidification Effects 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 239000000523 sample Substances 0.000 description 6
- 238000005266 casting Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 230000005484 gravity Effects 0.000 description 3
- 229920000742 Cotton Polymers 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application discloses a silicon liquid overflow detection device and a method, wherein the detection device comprises: a wire; the liquid level detection device is connected with the lower end of the metal wire and used for judging whether the liquid level detection device is contacted with the silicon liquid level in the ingot furnace; and the winding part is arranged above the ingot furnace and used for winding the metal wire and adjusting the length of the metal wire under the drive of the driving device. According to the technical scheme disclosed by the application, the winding part is used for winding the metal wire, when the height of the silicon liquid level needs to be detected, the metal wire can drive the liquid level detection device connected with the lower end of the metal wire to move downwards, the liquid level detection device can judge whether the metal wire is in contact with the silicon liquid level, if so, the length of the metal wire is recorded, the change of the silicon liquid level position is detected through the change of the length of the metal wire during detection, namely, whether the silicon liquid overflows is judged through the change of the length of the metal wire, so that the timeliness of silicon liquid overflow detection is improved, economic damage caused by the silicon liquid overflow is reduced, and the probability of safety accidents is reduced.
Description
Technical Field
The application relates to the technical field of polysilicon casting, in particular to a silicon liquid overflow detection device and a method.
Background
Cast polysilicon is generally prepared by a directional solidification method, and the preparation process is roughly as follows: placing silicon material into a crucible, placing a crucible guard plate on the outer layer of the crucible, placing the crucible into an ingot furnace, gradually raising the temperature inside the crucible to be higher than the melting temperature (1420 ℃) of the silicon material by heating to melt the silicon material, and then cooling the silicon liquid from the bottom by cooling to realize directional solidification growth from the bottom to the top. In the process of casting the polysilicon, because the temperature of the silicon liquid is relatively high, when the silicon liquid overflows, the overflowed silicon liquid can react with a crucible guard plate, a heat insulation material and the like, so that great economic loss is caused, and even safety accidents are caused due to explosion. Therefore, it is desirable to discover the overflow of the silicon liquid as early as possible to reduce the economic loss and to reduce the probability of occurrence of safety accidents.
Currently, silicone fluid overflow is often detected by: and paving overflow cotton on the inner surface of a lower furnace chamber of the ingot furnace, placing overflow metal wires on the overflow cotton, and fusing the overflow metal wires by the silicon liquid when the overflowed silicon liquid flows onto the overflow metal wires, wherein the resistivity of the overflow metal wires correspondingly changes, so that whether the silicon liquid overflows or not can be judged by detecting the change of the resistivity of the overflow metal wires. However, the detection method needs that the silicon liquid just drops on the overflow wire to detect the overflow of the silicon liquid, and the detection mode has hysteresis due to the fact that the overflow wire is far away from the crucible, so that great economic loss and even safety accidents can be caused.
In summary, the existing technical scheme for detecting overflow of silicon liquid has the problem that overflow of silicon liquid cannot be found in time.
Disclosure of Invention
Accordingly, the present application is directed to a silicon liquid overflow detecting device and method, so as to improve the timeliness of the silicon liquid overflow detection, thereby reducing the economic loss caused by the silicon liquid overflow and reducing the probability of safety accidents.
In order to achieve the above object, the present application provides the following technical solutions:
a silicon liquid overflow detection device comprising:
a wire;
the liquid level detection device is connected with the lower end of the metal wire and used for judging whether the liquid level detection device is in contact with the silicon liquid level in the ingot furnace;
the winding part is arranged above the ingot furnace and used for winding the metal wire and adjusting the length of the metal wire under the drive of the driving device.
Preferably, the liquid level detection device includes:
a liquid level detector for contacting the silicon liquid level;
and the measurer is connected with the metal wire and is used for measuring the tension of the metal wire in the process that the metal wire drives the liquid level detection part to move towards the silicon liquid level.
Preferably, the measurer is specifically a tension sensor.
Preferably, the measuring device is in particular a speed sensor.
Preferably, the liquid level detection member is specifically a ceramic detection member.
Preferably, the ceramic probe is specifically a silicon carbide probe or a silicon nitride probe.
Preferably, the metal wire is specifically any one of tungsten wire, molybdenum wire and stainless steel wire.
A silicon liquid overflow detection method based on the silicon liquid overflow detection apparatus as recited in any one of the above, comprising:
when the metal wire is driven by the winding part to enable the liquid level detection device to be in contact with the silicon liquid level, recording the current length of the metal wire;
comparing the current length with a reference length of the wire;
if the current length is greater than the reference length, overflowing the silicon liquid; if the current length is not greater than the reference length, the silicon liquid does not overflow.
Preferably, in the stage of completely melting the silicon material, the reference length is specifically a theoretical length corresponding to the metal wire when the silicon material is completely melted;
in the silicon liquid directional solidification stage, the reference length is specifically the length corresponding to the metal wire when the liquid level detection device detects the liquid level last time.
Preferably, after determining that the overflow of the silicon liquid does not occur, the method further comprises:
in the silicon liquid directional solidification stage, the liquid level detection device is placed into silicon liquid by using the metal wire so that the liquid level detection device is in contact with polysilicon, and the length of the metal wire is recorded;
comparing the recorded length with the length corresponding to the time when the metal wire is positioned at the bottom of the crucible to obtain the growth height of the polysilicon;
and obtaining the growth speed of the polysilicon according to the time interval detected by the liquid level detection device and the recorded change of the length of the metal wire.
The application discloses a silicon liquid overflow detection device and a method, wherein the detection device comprises: a wire; the liquid level detection device is connected with the lower end of the metal wire and used for judging whether the liquid level detection device is contacted with the silicon liquid level in the ingot furnace; and the winding part is arranged above the ingot furnace and used for winding the metal wire and adjusting the length of the metal wire under the drive of the driving device. According to the technical scheme disclosed by the application, the wire is wound by the winding part arranged above the ingot furnace, and the length of the wire is regulated under the drive of the driving device. When the height of the silicon liquid level needs to be detected, the metal wire can drive the liquid level detection device connected with the lower end of the metal wire to move downwards, the liquid level detection device can judge whether the metal wire is in contact with the silicon liquid level, if so, the length of the metal wire is recorded, whether the silicon liquid overflows or not is judged through the change of the length of the metal wire, namely, the change of the position of the silicon liquid level is detected through the change of the length of the metal wire, so that whether the silicon liquid overflows or not is judged, the timeliness of the detection of the silicon liquid overflow is improved, the economic damage caused by the silicon liquid overflow is reduced, and the probability of safety accidents is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present application, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a silicon liquid overflow detecting device according to an embodiment of the present application;
fig. 2 is a flowchart of a method for detecting overflow of silicon liquid according to an embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present application, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Referring to fig. 1, a schematic structural diagram of a silicon liquid overflow detecting device according to an embodiment of the present application may include:
a wire 11;
the liquid level detection device 12 is connected with the lower end of the metal wire 11 and is used for judging whether the liquid level detection device is contacted with the silicon liquid level in the ingot furnace 2;
a winding part 14 which is arranged above the ingot furnace 2 and is used for winding the metal wire 11 and adjusting the length of the metal wire 11 under the drive of the driving device 13.
The silicon liquid overflow detecting device may include a winding part 14, a wire 11, and a liquid level detecting means 12. The winding part 14 is disposed above the ingot furnace 2, is connected to a driving device 13 such as a motor or a servo motor, and winds the wire 11 thereon. The winding part 14 can rotate under the drive of the driving device 13 and drive the metal wire 11 to ascend or descend so as to adjust the length of the metal wire 11.
When the height of the silicon liquid level in the ingot furnace 2 needs to be detected, the winding part 14 drives the metal wire 11 to move downwards, and meanwhile, the metal wire 11 can drive the liquid level detection device 12 connected with the lower end of the metal wire to move downwards. The liquid level detection device 12 can judge whether the liquid level detection device contacts the silicon liquid level in real time during the downward movement. If the current length of the metal wire 11 contacts with the silicon liquid surface, the current length of the metal wire 11 is recorded, and the current length of the metal wire 11 is compared with the corresponding length when the metal wire 11 is positioned at the bottom of the crucible 21 in the ingot furnace 2, so that the height of the silicon liquid surface in the crucible 21 can be obtained. The specific way of recording the current length of wire 11 may be: a signal trigger 15 and a signal switch 16 corresponding to the signal trigger 15 are arranged in the silicon liquid overflow detection device, wherein the signal trigger 15 can be positioned on the metal wire 11 or at other positions and is in wireless communication with the liquid level detection device 12. When the liquid level detection device 12 contacts with the silicon liquid level, a signal is sent to the signal trigger 15, the signal trigger 15 sends the signal to the signal switch 16 corresponding to the signal trigger, and the signal switch 16 sends the corresponding signal, so that the corresponding device can record the current length of the metal wire 11 in time after receiving the signal, or prompt an operator on site to record the current length of the metal wire 11 in time.
From the above, the length of the wire 11 and the height of the silicon liquid surface have a certain correspondence. Therefore, when the silicon liquid level is detected, the change in the silicon liquid level height can be intuitively obtained by the change in the length of the wire 11. In the process of detecting the silicon liquid surface, if the silicon liquid overflows, the height of the silicon liquid surface decreases, which is visually reflected in that the length of the wire 11 becomes longer when the liquid surface detecting device 12 contacts the silicon liquid surface. Therefore, the change of the length of the metal wire 11 corresponding to the contact of the liquid level detection device 12 with the silicon liquid level can timely and intuitively judge whether the silicon liquid overflows, and if so, an alarm or other modes can be sent out to prompt, so that corresponding measures can be timely taken, the economic loss caused by the overflow of the silicon liquid is reduced, and the probability of safety accidents is reduced.
It should be noted that, the time interval of the detection of the liquid level detection device 12 may be set manually according to actual needs, for example, the time interval is set to 1min, 10min, 30min, 60min, etc., and in the stage that the silicon liquid is likely to overflow, the time interval of the detection may be shortened, and the frequency of the detection may be increased.
According to the technical scheme disclosed by the application, the wire is wound by the winding part arranged above the ingot furnace, and the length of the wire is regulated under the drive of the driving device. When the height of the silicon liquid level needs to be detected, the metal wire can drive the liquid level detection device connected with the lower end of the metal wire to move downwards, the liquid level detection device can judge whether the metal wire is in contact with the silicon liquid level, if so, the length of the metal wire is recorded, whether the silicon liquid overflows or not is judged through the change of the length of the metal wire, namely, the change of the position of the silicon liquid level is detected through the change of the length of the metal wire, so that whether the silicon liquid overflows or not is judged, the timeliness of the detection of the silicon liquid overflow is improved, the economic damage caused by the silicon liquid overflow is reduced, and the probability of safety accidents is reduced.
The silicon liquid overflow detecting device provided by the embodiment of the application, the liquid level detecting device 12 may include:
a liquid level detecting member 121 for contacting the silicon liquid level;
and a measurer 122 connected with the metal wire 11 and used for measuring the tension of the metal wire 11 in the process that the metal wire 11 drives the liquid level detection part 121 to move towards the silicon liquid level.
The above-mentioned liquid level detecting device 12 for determining whether or not it is in contact with the silicon liquid level may specifically include a liquid level detecting member 121, a measurer 122. Wherein, the liquid level detecting piece 121 is used for contacting with the silicon liquid level under the drive of the metal wire 11; the measurer 122 is connected to the wire 11, and is used for measuring the tension of the wire 11 in the process that the wire 11 drives the liquid level detecting member 121 to move downwards. The liquid level detecting member 121 may have a rod-like structure to reduce damage to the liquid level detecting member 121 caused by the height Wen Guiye. Of course, the liquid level detecting member 121 may have other structures, and the specific structure thereof is not limited in any way.
In the detection process, the wire 11 can drive the liquid level detecting member 121 to move downwards at a constant speed, and at this time, the tension of the wire 11 measured by the measurer 122 is equal to the gravity of the liquid level detecting member 121. When the liquid level detecting member 121 contacts with the silicon liquid, the liquid level detecting member 121 receives the action of the silicon liquid buoyancy, at this time, the tension of the wire 11 measured by the measuring device 122 is smaller than the gravity of the liquid level detecting member 121, that is, when the tension of the wire 11 measured by the measuring device 122 is smaller than the gravity of the liquid level detecting member 121, that is, the moment that the liquid level detecting member 121 contacts with the silicon liquid level is indicated, the current length of the wire 11 at this moment is correspondingly recorded. The measurer 122 may transmit the measured tension of the wire 11 in a wireless transmission manner, so that corresponding devices in the casting system may determine whether the liquid level detecting element 121 contacts with the silicon liquid level in time according to the measured data, thereby being convenient to record the current length of the corresponding wire 11 in time when the contact occurs.
The wire 11 may drive the liquid level detecting member 121 to perform uniform acceleration or uniform deceleration. When the tension of the wire 11 measured by the measurer 122 changes, it is indicated that the liquid level detecting member 121 is in contact with the silicon liquid level. The liquid level detection device 12 for judging whether the liquid level of the silicon is contacted or not by measuring the tension of the metal wire 11 and judging whether the tension of the metal wire 11 is changed or not is easy to realize, and the test result is accurate and reliable. Of course, it is also possible to determine whether the silicon liquid surface is in contact with it by measuring the pressure, capacitance, etc., and the corresponding implementation means are all within the scope of the present application.
In the silicon liquid overflow detection device provided by the embodiment of the application, the measurer 122 may be a tension sensor.
The tension of the wire 11 can be measured directly using a tension sensor as the measurer 122 in the level detection device 12 so that it is possible to intuitively characterize whether the level detection member 121 is in contact with the silicon level based on the data measured by the tension sensor.
In the silicon liquid overflow detection device provided by the embodiment of the application, the measurer 122 may be a speed sensor.
In addition to using a tension sensor as the measurer 122, a speed sensor may be used as the measurer 122, that is, the speed of the wire 11 is measured by the speed sensor to indirectly obtain the tension of the wire 11, thereby judging whether the liquid level detecting member 121 is in contact with the silicon liquid level.
The embodiment of the application provides a silicon liquid overflow detection device, and a liquid level detection member 121 may be a ceramic detection member.
Since the temperature of the silicon liquid is about 1420 c, in order to prevent the liquid level detecting member 121 from melting during the detection process to affect the service life thereof, and in order to prevent the liquid level detecting member 121 from polluting the silicon liquid due to the melting, ceramics having a melting point far greater than that of silicon (melting point is about 3000 c) may be used as the liquid level detecting member 121. Of course, graphite having a melting point of about 3652 ℃ may be used as the liquid level detecting member 121, and are within the scope of the present application.
The silicon liquid overflow detection device provided by the embodiment of the application can be a silicon carbide detection piece or a silicon nitride detection piece.
The ceramic probe mentioned above may be a probe prepared from silicon carbide or a probe prepared from silicon nitride. Of course, the device can also be a detection piece made of other ceramic materials, so as to prolong the service life of the detection piece and reduce the manufacturing and using cost of the silicon liquid overflow detection device.
The metal wire 11 of the silicon liquid overflow detection device provided by the embodiment of the application can be any one of tungsten wire, molybdenum wire and stainless steel wire.
In order to prevent the metal wire 11 exposed to the high temperature environment from melting and not being used normally, any one of tungsten wire, molybdenum wire, and stainless steel wire having a relatively high melting point may be used as the metal wire 11 in the silicon liquid overflow detecting apparatus. In order to further extend the service life of the wire 11 and the level detection device 12, the wire 11 may be lifted into a thermal insulation material or placed in other low temperature areas when level detection is not performed.
The embodiment of the application also provides a silicon liquid overflow detection method, based on any of the above silicon liquid overflow detection devices, please refer to fig. 2, which shows a flow chart of the silicon liquid overflow detection method provided by the embodiment of the application, which may include:
s11: when the metal wire is driven by the winding part to enable the liquid level detection device to be in contact with the silicon liquid level, the current length of the metal wire is recorded.
When the liquid level is detected, the winding part in the silicon liquid overflow detection equipment drives the metal wire to move downwards under the action of the driving device, and when the liquid level detection device connected with the lower end of the metal wire is contacted with the silicon liquid level in the ingot furnace, the current length of the metal wire is recorded.
S12: the current length is compared to a reference length of wire.
Because the length of the metal wire and the height of the silicon liquid level have a certain corresponding relation, whether the silicon liquid overflows or not can be intuitively reflected through the change of the length of the metal wire. When judging whether the overflow of the silicon liquid occurs or not through the length change of the metal wire, whether the overflow of the silicon liquid occurs or not can be judged by comparing the recorded current length of the metal wire with the corresponding reference length of the metal wire. The reference length of the metal wire is the length of the metal wire corresponding to the height of the silicon liquid surface when the silicon liquid does not overflow.
S13: if the current length is greater than the reference length, overflowing the silicon liquid; if the current length is not greater than the reference length, the silicon liquid does not overflow.
If the silicon liquid overflows, the silicon liquid level can drop, and correspondingly, the recorded current length of the metal wire can be larger than the reference length of the metal wire, namely, when the recorded current length of the metal wire is larger than the reference length of the metal wire, the silicon liquid overflows; if the silicon liquid does not overflow, the silicon liquid level does not drop, and at the moment, the current length of the metal wire is not larger than the reference length, namely, when the recorded current length of the metal wire is not larger than the reference length of the metal wire, the silicon liquid is indicated not to overflow. That is, whether overflow of the silicon liquid occurs can be intuitively and rapidly judged through the recorded relation between the current length of the metal wire and the reference length of the metal wire, so that timeliness of overflow detection of the silicon liquid is improved, economic damage caused by overflow of the silicon liquid is reduced, and probability of safety accidents is reduced.
According to the silicon liquid overflow detection method provided by the embodiment of the application, in the stage of complete melting of silicon materials, the reference length is specifically the theoretical length corresponding to the metal wire when the silicon materials are completely melted;
in the silicon liquid directional solidification stage, the reference length is specifically the length corresponding to the metal wire when the liquid level detection device detects the last time.
In the process of casting polycrystalline silicon, when the silicon material filled into the crucible is completely melted and overflow does not occur, the height of the silicon liquid level is kept unchanged, and when the silicon material is put in the crucible for a certain time, the theoretical height corresponding to the silicon liquid level can be obtained through calculation, and then the theoretical length of a metal wire correspondingly exists at the moment. Therefore, in the stage of completely melting the silicon material, the reference length of the metal wire is the theoretical length corresponding to the metal wire when the silicon material is completely melted, and whether the silicon liquid overflows or not is judged by comparing the current length of the metal wire with the reference length corresponding to the current length.
In the directional solidification stage of the silicon liquid, the lower part of the silicon liquid starts to become solid, and since the density of the polysilicon solid is smaller than that of the silicon melt, the volume of the solid becomes large, and accordingly, the silicon liquid level rises. Therefore, if no overflow of the silicon liquid occurs during the previous detection by the liquid level detection device, the length corresponding to the wire during the detection can be used as the reference length of the wire, that is, the length corresponding to the wire during the previous detection by the liquid level detection device can be used as the reference length of the wire. When the silicon liquid overflows, the descending amplitude of the silicon liquid level is far larger than the height of the silicon liquid level which is increased due to the generation of solid at the bottom, so that whether the silicon liquid overflows or not can be judged through the relation between the current length of the metal wire and the reference length of the metal wire.
The method for detecting overflow of silicon liquid provided by the embodiment of the application can further comprise the following steps after determining that the silicon liquid is not overflowed:
in the silicon liquid directional solidification stage, a liquid level detection device is placed into silicon liquid by using a metal wire so that the liquid level detection device is in contact with polysilicon, and the length of the metal wire is recorded;
comparing the recorded length with the length corresponding to the time when the metal wire is positioned at the bottom of the crucible to obtain the growth height of the polysilicon;
and obtaining the growth speed of the polysilicon according to the time interval detected by the liquid level detection device and the recorded change of the length of the metal wire.
In the silicon liquid directional solidification stage, if the silicon liquid is determined not to overflow, the liquid level detection device can be deeply penetrated into the silicon liquid by utilizing a metal wire so as to enable the liquid level detection device to be in contact with polysilicon generated by solidification at the lower part. After the level detection device is in contact with the polysilicon, the length of the wire is recorded. And comparing the length of the recorded metal wire with the length corresponding to the time when the metal wire is positioned at the bottom of the crucible, wherein the difference value of the length and the length is the growth height of the polysilicon.
In addition, the length change of the metal wire can be obtained according to the length of the metal wire recorded when the liquid level detection device detects the solid-liquid interface each time, and the growth speed of the polysilicon can be calculated by combining the time interval of the liquid level detection device for detecting the solid-liquid interface. Of course, the liquid level detection device can be contacted with the silicon liquid level, the change of the length of the metal wire can be obtained through the change of the height of the silicon liquid level, and then the growth speed of the polysilicon can be calculated by combining the detected time interval.
That is, the overflow detection device for the silicon liquid provided by the application can not only detect whether overflow occurs in the silicon liquid, but also measure the growth height of the polysilicon and the growth speed of the polysilicon.
It is noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements is inherent to. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element. In addition, the parts of the above technical solutions provided in the embodiments of the present application, which are consistent with the implementation principles of the corresponding technical solutions in the prior art, are not described in detail, so that redundant descriptions are avoided.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A silicon liquid overflow detection device, characterized by comprising:
a wire;
the liquid level detection device is connected with the lower end of the metal wire and used for judging whether the liquid level detection device is in contact with the silicon liquid level in the ingot furnace;
the winding part is arranged above the ingot furnace and used for winding the metal wire and adjusting the length of the metal wire under the drive of the driving device;
the signal trigger receives a signal sent by the liquid level detection device and sends the signal to the corresponding signal switch when the liquid level detection device is in contact with the silicon liquid level;
the signal switch is used for receiving and sending a signal so as to timely record the current length of the metal wire when the liquid level detection device is in contact with the silicon liquid level.
2. The silicon liquid overflow detecting apparatus as claimed in claim 1, wherein the liquid level detecting means comprises:
a liquid level detector for contacting the silicon liquid level;
and the measurer is connected with the metal wire and is used for measuring the tension of the metal wire in the process that the metal wire drives the liquid level detection part to move towards the silicon liquid level.
3. The silicon liquid overflow detection device as claimed in claim 2, wherein the measurer is in particular a tension sensor.
4. The silicon liquid overflow detecting device according to claim 2, characterized in that the measurer is in particular a speed sensor.
5. The silicon liquid overflow detecting device as claimed in claim 2, wherein the liquid level detecting member is specifically a ceramic detecting member.
6. The silicon liquid overflow detecting device as claimed in claim 5, wherein the ceramic detecting member is a silicon carbide detecting member or a silicon nitride detecting member.
7. The silicon liquid overflow detecting device as claimed in claim 1, wherein the metal wire is any one of tungsten wire, molybdenum wire, stainless steel wire.
8. A silicon liquid overflow detecting method, characterized by comprising, based on the silicon liquid overflow detecting apparatus as set forth in any one of claims 1 to 7:
when the metal wire is driven by the winding part to enable the liquid level detection device to be in contact with the silicon liquid level, recording the current length of the metal wire;
comparing the current length with the reference length of the metal wire, wherein the reference length of the metal wire is the length of the metal wire corresponding to the height of the silicon liquid surface when the silicon liquid does not overflow;
if the current length is greater than the reference length, overflowing the silicon liquid; if the current length is not greater than the reference length, the silicon liquid does not overflow.
9. The method according to claim 8, wherein the reference length is a theoretical length corresponding to the wire when the silicon material is completely melted in a complete melting stage of the silicon material;
in the silicon liquid directional solidification stage, the reference length is specifically the length corresponding to the metal wire when the liquid level detection device detects the liquid level last time.
10. The silicon liquid overflow detecting method as recited in claim 8, further comprising, after determining that the overflow of the silicon liquid does not occur:
in the silicon liquid directional solidification stage, the liquid level detection device is placed into silicon liquid by using the metal wire so that the liquid level detection device is in contact with polysilicon, and the length of the metal wire is recorded;
comparing the recorded length with the length corresponding to the time when the metal wire is positioned at the bottom of the crucible to obtain the growth height of the polysilicon;
and obtaining the growth speed of the polysilicon according to the time interval detected by the liquid level detection device and the recorded change of the length of the metal wire.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810594099.0A CN108411363B (en) | 2018-06-11 | 2018-06-11 | Silicon liquid overflow detection equipment and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810594099.0A CN108411363B (en) | 2018-06-11 | 2018-06-11 | Silicon liquid overflow detection equipment and method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108411363A CN108411363A (en) | 2018-08-17 |
| CN108411363B true CN108411363B (en) | 2023-10-31 |
Family
ID=63141674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810594099.0A Active CN108411363B (en) | 2018-06-11 | 2018-06-11 | Silicon liquid overflow detection equipment and method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108411363B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115597682B (en) * | 2022-12-13 | 2023-03-10 | 常州臻晶半导体有限公司 | System and method for measuring liquid level height value in silicon carbide single crystal growth process |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102383183A (en) * | 2011-11-04 | 2012-03-21 | 湖南顶立科技有限公司 | Crystalline silicon ingot casting furnace |
| CN202175735U (en) * | 2011-07-30 | 2012-03-28 | 常州天合光能有限公司 | Immediate feedback device for overflow of silicon liquid |
| JP2016099266A (en) * | 2014-11-25 | 2016-05-30 | 住友精密工業株式会社 | Liquid level detecting device and liquid level detection system |
| CN105780111A (en) * | 2016-05-16 | 2016-07-20 | 西安创联新能源设备有限公司 | Crystal growth speed automatic measuring device of multicrystal silicon ingot casting furnace |
| CN206902283U (en) * | 2017-03-20 | 2018-01-19 | 东海晶澳太阳能科技有限公司 | A kind of polycrystalline furnace ingot casting overflow detects warning device |
| CN208346306U (en) * | 2018-06-11 | 2019-01-08 | 晶科能源有限公司 | A kind of silicon liquid overflow detection device |
-
2018
- 2018-06-11 CN CN201810594099.0A patent/CN108411363B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202175735U (en) * | 2011-07-30 | 2012-03-28 | 常州天合光能有限公司 | Immediate feedback device for overflow of silicon liquid |
| CN102383183A (en) * | 2011-11-04 | 2012-03-21 | 湖南顶立科技有限公司 | Crystalline silicon ingot casting furnace |
| JP2016099266A (en) * | 2014-11-25 | 2016-05-30 | 住友精密工業株式会社 | Liquid level detecting device and liquid level detection system |
| CN105780111A (en) * | 2016-05-16 | 2016-07-20 | 西安创联新能源设备有限公司 | Crystal growth speed automatic measuring device of multicrystal silicon ingot casting furnace |
| CN206902283U (en) * | 2017-03-20 | 2018-01-19 | 东海晶澳太阳能科技有限公司 | A kind of polycrystalline furnace ingot casting overflow detects warning device |
| CN208346306U (en) * | 2018-06-11 | 2019-01-08 | 晶科能源有限公司 | A kind of silicon liquid overflow detection device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108411363A (en) | 2018-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7264674B2 (en) | Method for pulling a single crystal | |
| CN108411363B (en) | Silicon liquid overflow detection equipment and method | |
| WO1991013324A1 (en) | Liquid level detecting apparatus and liquid level detecting method | |
| JP5263905B2 (en) | Molten metal measurement system and probe used in the system | |
| CN208346306U (en) | A kind of silicon liquid overflow detection device | |
| JP5392051B2 (en) | Single crystal puller | |
| JP3891592B2 (en) | Method and infiltration meter for measuring electrochemical activity | |
| US3946594A (en) | Disposable phase change device | |
| US4281985A (en) | Automatic thermocouple positioner for use in vacuum furnaces | |
| US4150974A (en) | Indication of levels in receptacles | |
| JP2006160538A (en) | Detector for detecting leakage of melt in single crystal pulling apparatus, single crystal pulling apparatus, and method for detecting leakage of melt | |
| CN111850209A (en) | Blast furnace iron runner erosion detection system and method | |
| US6286368B1 (en) | Self-immersing wetting balance | |
| CN113084102B (en) | Crystallizer protection slag liquid slag layer thickness testing device and method based on wettability | |
| JP2937544B2 (en) | Automatic hot water supply device | |
| CA1108269A (en) | Molten metal level indication in receptacles | |
| CN115597682B (en) | System and method for measuring liquid level height value in silicon carbide single crystal growth process | |
| KR101239511B1 (en) | Carbon heating element for measuring melting characteristics of mold powder and measurement apparatus and measurement method using the same | |
| KR100337933B1 (en) | Method of measuring the surface tension using withdrawal force curve in the wetting balance curve | |
| US4433420A (en) | Method and apparatus for determining the level of slag containing iron or iron compounds in a glass melting furnace | |
| JP5375815B2 (en) | Method for controlling immersion depth of probe for measuring molten metal, and probe for measuring molten metal used therefor | |
| CN104294357A (en) | Polycrystalline ingot casting seed crystal melting control method and polycrystalline ingot casting furnace | |
| US3646802A (en) | Automatic pour-point-measuring method and apparatus | |
| CN106273113A (en) | A kind of Temperature Measurement of Tire during Vulcanization method | |
| JPS60187455A (en) | Detection of molten metal level in casting mold |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: No. 1 Yingbin Avenue, Shangrao Economic and Technological Development Zone, Shangrao City, Jiangxi Province, 334000 Applicant after: Jingke Energy Co.,Ltd. Applicant after: ZHEJIANG JINKO SOLAR Co.,Ltd. Address before: 334100, No. 1, crystal Road, Shangrao Economic Development Zone, Jiangxi, China Applicant before: JINKO SOLAR Co.,Ltd. Applicant before: ZHEJIANG JINKO SOLAR Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |