CN108411363A - A kind of silicon liquid overflow detection device and method - Google Patents
A kind of silicon liquid overflow detection device and method Download PDFInfo
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- CN108411363A CN108411363A CN201810594099.0A CN201810594099A CN108411363A CN 108411363 A CN108411363 A CN 108411363A CN 201810594099 A CN201810594099 A CN 201810594099A CN 108411363 A CN108411363 A CN 108411363A
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- 239000007788 liquid Substances 0.000 title claims abstract description 256
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 176
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 176
- 239000010703 silicon Substances 0.000 title claims abstract description 176
- 238000001514 detection method Methods 0.000 title claims abstract description 120
- 238000000034 method Methods 0.000 title abstract description 16
- 238000004804 winding Methods 0.000 claims abstract description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 19
- 229920005591 polysilicon Polymers 0.000 claims description 19
- 239000002210 silicon-based material Substances 0.000 claims description 12
- 238000007711 solidification Methods 0.000 claims description 11
- 230000008023 solidification Effects 0.000 claims description 11
- 239000000919 ceramic Substances 0.000 claims description 8
- 229910000831 Steel Inorganic materials 0.000 claims description 5
- 239000000523 sample Substances 0.000 claims description 5
- 239000010959 steel Substances 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 241000208340 Araliaceae Species 0.000 claims 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 claims 1
- 235000003140 Panax quinquefolius Nutrition 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 235000008434 ginseng Nutrition 0.000 claims 1
- 238000005266 casting Methods 0.000 description 6
- 239000007787 solid Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000005484 gravity Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229920000742 Cotton Polymers 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000011664 signaling Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Measurement Of Levels Of Liquids Or Fluent Solid Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a kind of silicon liquid overflow detection device and method, the wherein detection device includes：Wire；It is connected with the lower end of wire, the liquid detection device for judging whether to be in contact with the silicon liquid level in ingot furnace；It is arranged in the top of ingot furnace, for winding wire, and adjusts the wound portion of the length of wire under the drive of the drive.Above-mentioned technical proposal disclosed in the present application, wire is wound using wound portion, when needing to detect the height of silicon liquid level, wire can drive the liquid detection device being connected with its lower end to move down, liquid detection device can judge whether it contacts with silicon liquid level, if being in contact, then record the length of wire, the variation of silicon liquid level position is detected by the variation of wire length when detection, namely by the variation of wire length come judge silicon liquid whether overflow, to improve the promptness of silicon liquid overflow detection, reduce economic damage caused by due to silicon liquid overflow, reduce the probability that safety accident occurs.
Description
Technical field
The present invention relates to polysilicon casting technology fields, more specifically to a kind of silicon liquid overflow detection device and side
Method.
Background technology
Prepared by casting polysilicon generally use directional solidification method, preparation process is substantially：Silicon material is put into crucible
It is interior, place crucible guard boards in crucible outer layer, and crucible be put into ingot furnace, by heating allow the temperature inside crucible it is gradual on
It is raised on the melting temperature (1420 DEG C) of silicon material and makes melting silicon materials, then so that silicon liquid is begun to cool from bottom by cooling,
To realize directional solidification growth from bottom to top.During casting polysilicon, since the temperature of silicon liquid is relatively high, when
When overflow occurs for silicon liquid, the silicon liquid meeting of overflow and crucible guard boards, thermal insulation material etc. react, to cause greatly economic damage
It loses, or even will produce explosion and cause safety accident.Therefore, it is necessary to find silicon liquid overflow as early as possible, to reduce economic loss, and drop
The low probability that safety accident occurs.
Currently, often detecting silicon liquid overflow in the following manner：It is laid with overflow cotton in the lower furnace chamber inner surface of ingot furnace, is being overflow
It flows and places overflow wire on cotton, when the silicon liquid of overflow flows on overflow wire, silicon liquid can fuse overflow wire,
Resistivity can be corresponded to and be changed, and therefore, the variation by detecting overflow wire resistance can determine whether silicon liquid occurs
Overflow.But this detection method needs silicon liquid to be just dropped in the overflow that can just detect silicon liquid on overflow wire, due to
Overflow wire is distant apart from crucible, then making this detection mode, there are hysteresis qualitys, consequently, it is possible to causing greatly
Economic loss, or even safety accident can be caused.
In conclusion the technical solution of existing detection silicon liquid overflow there are problems that find silicon liquid overflow in time.
Invention content
In view of this, the object of the present invention is to provide a kind of silicon liquid overflow detection device and method, to improve silicon liquid overflow
The promptness of detection reduces the probability that safety accident occurs to reduce economic loss caused by due to silicon liquid overflow.
To achieve the goals above, the present invention provides the following technical solutions：
A kind of silicon liquid overflow detection device, including：
Wire；
It is connected with the lower end of the wire, the detecting liquid level for judging whether to be in contact with the silicon liquid level in ingot furnace
Device；
It is arranged in the top of ingot furnace, for winding the wire, and adjusts the gold under the drive of the drive
Belong to the wound portion of the length of silk.
Preferably, the liquid detection device includes：
Detecting liquid level part for being in contact with silicon liquid level；
It is connected with the wire, for driving the process that the detecting liquid level part is moved to silicon liquid level in the wire
In, measuring appliance that the pulling force of the wire is measured.
Preferably, the measuring appliance is specially pulling force sensor.
Preferably, the measuring appliance is specially velocity sensor.
Preferably, the detecting liquid level part is specially ceramic probe part.
Preferably, the ceramic probe part is specially silicon carbide detection part or silicon nitride detection part.
Preferably, the wire is specially any one in tungsten filament, molybdenum filament, stainless steel steel wire.
A kind of silicon liquid overflow detection method is based on silicon liquid overflow detection device described in any one of the above embodiments, including：
When wire makes liquid detection device be in contact with silicon liquid level under the drive of wound portion, the wire is recorded
Current length；
The current length is compared with the reference length of the wire；
If the current length is more than the reference length, overflow occurs for silicon liquid；If the current length is not more than institute
Reference length is stated, then overflow does not occur for silicon liquid.
Preferably, it is completely melt that stage, the reference length are specially wire when silicon material is completely melt in silicon material
Corresponding theoretical length；
In the silicon liquid directional solidification stage, reference length gold when being specially the liquid detection device last time detection
Belong to the length corresponding to silk.
Preferably, after determining that overflow does not occur for silicon liquid, further include：
In the silicon liquid directional solidification stage, the liquid detection device is put into silicon liquid using the wire, so that institute
It states liquid detection device to be in contact with polysilicon, records the length of the wire；
Corresponding length is compared when the length of record is located at crucible bottom with the wire, to obtain polycrystalline
The growing height of silicon；
According to the variation of the time interval of liquid detection device detection and the wire length recorded, obtain
To the speed of growth of polysilicon.
The invention discloses a kind of silicon liquid overflow detection device and method, the wherein detection device includes：Wire；With gold
Belong to silk lower end be connected, the liquid detection device for judging whether to be in contact with the silicon liquid level in ingot furnace；It is arranged in ingot casting
The top of stove, for winding wire, and adjust the wound portion of the length of wire under the drive of the drive.The application is public
The above-mentioned technical proposal opened winds wire using the wound portion being arranged above ingot furnace, and under the drive of the drive
Adjust the length of wire.When needing to detect the height of silicon liquid level, wire can drive the liquid level being connected with wire lower end
Detection device moves down, and liquid detection device can judge whether it contacts with silicon liquid level, if being in contact, record wire
Length, judge whether that silicon liquid overflow occurs by the variation of wire length, namely visit by the variation of wire length
The variation for surveying silicon liquid level position, to improve the promptness of silicon liquid overflow detection, is reduced so as to silicon liquid, whether overflow judges
Economic damage caused by due to silicon liquid overflow, reduces the probability that safety accident occurs.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of silicon liquid overflow detection device provided in an embodiment of the present invention；
Fig. 2 is a kind of flow chart of silicon liquid overflow detection method provided in an embodiment of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Fig. 1 is referred to, it illustrates a kind of structural schematic diagram of silicon liquid overflow detection device provided in an embodiment of the present invention,
May include：
Wire 11；
It is connected with the lower end of wire 11, the detecting liquid level for judging whether to be in contact with the silicon liquid level in ingot furnace 2
Device 12；
It is arranged in the top of ingot furnace 2, for winding wire 11, and wire is adjusted under the driving of driving device 13
The wound portion 14 of 11 length.
Silicon liquid overflow detection device may include wound portion 14, wire 11, liquid detection device 12.Wherein, wound portion
14 are arranged in the top of ingot furnace 2, are connected with driving devices 13 such as motor or servo motors and are wound with wire thereon
11.Wound portion 14 may be rotated under the driving of driving device 13, while wire 11 being driven to be risen or fallen, with
Realize the adjusting to 11 length of wire.
When needing to detect the height of silicon liquid level in ingot furnace 2, wound portion 14 drives wire 11 to move down, at the same time,
Wire 11 then can drive the liquid detection device being connected with its lower end 12 to move down.Liquid detection device 12 is to moving down
Real-time judge in dynamic process, whether it is in contact with silicon liquid level.If being in contact with silicon liquid level, wire 11 is recorded
Current length, it is corresponding when the current length of wire 11 and wire 11 are in 21 bottom of crucible in ingot furnace 2
Length is compared, you can obtains the height of silicon liquid level in crucible 21 at this time.Record the specific side of the current length of wire 11
Formula can be：Setting signal trigger 15 and signaling switch corresponding with signal trigger 15 in silicon liquid overflow detection device
16, wherein signal trigger 15 can be located at wire 11 on, can also be located at other positions, and with liquid detection device 12
It carries out wireless communication.When liquid detection device 12 is in contact with silicon liquid level, signal can be sent to signal trigger 15, signal touches
Hair device 15 sends the signal to signal corresponding thereto switch 16, and sends corresponding signal by signaling switch 16, in order to phase
The device answered can record the current length of wire 11 in time after receiving signal, or convenient for reminding the operation at scene
Personnel can record the current length of wire 11 in time.
It can be seen from the above, there are certain correspondences for the length and the height of silicon liquid level of wire 11.Therefore, to silicon
When liquid level is detected, the variation of silicon liquid level height can be intuitively obtained by the variation of 11 length of wire.To silicon liquid
During face is detected, if overflow occurs for silicon liquid, the height of silicon liquid level can decline, intuitively be presented as and work as detecting liquid level
The length of wire 11 can be elongated when device 12 is in contact with silicon liquid level.Therefore, it is sent out by liquid detection device 12 and silicon liquid level
The variation of corresponding 11 length of wire can timely, intuitively judge whether silicon liquid occurs overflow when raw contact, if hair
Raw overflow, then can be prompted by sending out alarm or other modes, in order to which corresponding measure can be taken in time, to
The economic loss caused by silicon liquid overflow is reduced, the probability that safety accident occurs is reduced.
It should be noted that the time interval that liquid detection device 12 detects can according to actual needs be set by manually
It is fixed, such as set time interval to 1min, 10min, 30min, 60min etc., and it is easy to happen the stage of overflow in silicon liquid,
The time interval that detection can also be shortened increases the frequency of detection.
Above-mentioned technical proposal disclosed in the present application, using the wound portion winding wire being arranged above ingot furnace, and
The length of wire is adjusted under the driving of driving device.When needing to detect the height of silicon liquid level, wire can drive and metal
The connected liquid detection device in silk lower end moves down, and liquid detection device can judge whether it contacts with silicon liquid level, if occurring
Contact, then record the length of wire, judges whether that silicon liquid overflow occurs by the variation of wire length, namely pass through metal
Filament length degree changes to detect the variation of silicon liquid level position, with to silicon liquid, whether overflow judges, to improve silicon liquid overflow
The promptness of detection reduces economic damage caused by due to silicon liquid overflow, reduces the probability that safety accident occurs.
A kind of silicon liquid overflow detection device provided in an embodiment of the present invention, liquid detection device 12 may include：
Detecting liquid level part 121 for being in contact with silicon liquid level；
It is connected with wire 11, is used for during wire 11 drives detecting liquid level part 121 to be moved to silicon liquid level, it is right
The measuring appliance 122 that the pulling force of wire 11 measures.
Judge whether that the liquid detection device being in contact with silicon liquid level 12 can specifically include liquid level spy mentioned by above-mentioned
Survey part 121, measuring appliance 122.Wherein, detecting liquid level part 121 under the drive of wire 11 with silicon liquid level for being in contact；It measures
Device 122 is then connected with wire 11, for during wire 11 drives detecting liquid level part 121 to move down to wire
11 pulling force measures.Wherein, detecting liquid level part 121 can be club shaped structure, to reduce high temperature silicon liquid to detecting liquid level part
Damage caused by 121.Certainly, detecting liquid level part 121 or other structures, do not do its concrete structure at this any
It limits.
In detection process, wire 11 can drive detecting liquid level part 121 at the uniform velocity to move down, at this point, measuring appliance 122
The pulling force of the wire 11 measured is equal with the gravity of detecting liquid level part 121.When detecting liquid level part 121 is in contact with silicon liquid
When, detecting liquid level part 121 can be acted on by silicon liquid buoyancy, at this point, measuring appliance 122 measures the pulling force meeting of obtained wire 11
Less than the gravity of detecting liquid level part 121, that is to say, that when the pulling force that measuring appliance 122 measures obtained wire 11 is less than liquid level
That is, show that detecting liquid level part 121 is contacted with silicon liquid level that time of the gravity of detection part 121, then corresponding record is at this time
Inscribe the current length of wire 11.Wherein, measuring appliance 122 can be by the pulling force of the wire 11 measured through wireless transmission etc.
Mode transfers out, in order to which corresponding device etc. can judge that liquid level is visited in time according to obtained data are measured in casting system
Survey whether part 121 is in contact with silicon liquid level, consequently facilitating corresponding wire 11 can be recorded in time when being in contact
Current length.
It should be noted that wire 11 can also drive detecting liquid level part 121 to carry out even acceleration or even slow down.
When the pulling force for the wire 11 that measuring appliance 122 measures changes, that is, show that detecting liquid level part 121 connects with silicon liquid level
It touches.This pulling force by measurement wire 11, and whether changed to determine whether and silicon liquid by 11 pulling force of wire
The liquid detection device 12 that face is in contact, which not only implements, to be easier, but also test result is relatively more accurate, reliable.When
So, can also be by the variation of measurement pressure, capacitance etc. to determine whether being in contact with silicon liquid level, corresponding realization device is equal
Within protection scope of the present invention.
A kind of silicon liquid overflow detection device provided in an embodiment of the present invention, measuring appliance 122 are specifically as follows pulling force sensor.
Can directly wire 11 be measured using pulling force sensor as the measuring appliance 122 in liquid detection device 12
Pulling force, in order to the data that can be intuitively measured according to pulling force sensor characterize detecting liquid level part 121 whether with silicon liquid
Face is in contact.
A kind of silicon liquid overflow detection device provided in an embodiment of the present invention, measuring appliance 122 are specifically as follows velocity sensor.
It, can also be using velocity sensor as measuring appliance other than using pulling force sensor as measuring appliance 122
122, namely the speed of wire 11 is measured to obtain the pulling force of wire 11 indirectly, to judge liquid level by velocity sensor
Whether detection part 121 is in contact with silicon liquid level.
A kind of silicon liquid overflow detection device provided in an embodiment of the present invention, detecting liquid level part 121 are specifically as follows ceramic spy
Survey part.
Since the temperature of silicon liquid is about at 1420 DEG C or so, then in order to avoid detecting liquid level part 121 is sent out in detection process
Life melts and influences its service life, and in order to avoid being polluted to silicon liquid due to detecting liquid level part 121 is melted because occurring, then may be used
Using the ceramics (fusing point is at 3000 DEG C or so) using fusing point much larger than silicon fusing point as detecting liquid level part 121.It is of course also possible to sharp
Use the graphite that fusing point is about 3652 DEG C as detecting liquid level part 121, these are within protection scope of the present invention.
A kind of silicon liquid overflow detection device provided in an embodiment of the present invention, ceramic probe part are specifically as follows silicon carbide detection
Part or silicon nitride detection part.
Above-mentioned mentioned ceramic probe part is specifically as follows the detection part prepared using silicon carbide, or utilizes
The detection part that silicon nitride is prepared.It is of course also possible to for the detection part etc. prepared using other ceramic materials, to improve detection
The service life of part reduces manufacture and the use cost of silicon liquid overflow detection device.
A kind of silicon liquid overflow detection device provided in an embodiment of the present invention, wire 11 are specifically as follows tungsten filament, molybdenum filament, no
Become rusty steel steel wire in any one.
In order to avoid fusing occurs for the wire 11 of exposure in the high temperature environment and it is unable to normal use, then can be utilized molten
Any one in the relatively high tungsten filament of point, molybdenum filament, stainless steel steel wire is as the wire 11 in silicon liquid overflow detection device.For
The further service life for extending wire 11 and liquid detection device 12 then can will be golden when without detecting liquid level
Belong to silk 11 and is promoted in thermal insulation material or is placed on other low-temperature regions.
The embodiment of the present invention additionally provides a kind of silicon liquid overflow detection method, is set based on any of the above-described kind of silicon liquid overflow detection
It is standby, Fig. 2 is referred to, it illustrates a kind of flow charts of silicon liquid overflow detection method provided in an embodiment of the present invention, may include：
S11：When wire makes liquid detection device be in contact with silicon liquid level under the drive of wound portion, wire is recorded
Current length.
In detecting liquid level, the wound portion in silicon liquid overflow detection device driven under the action of driving device wire to
Lower movement is then recorded when the liquid detection device that the lower end with wire is connected is in contact with the silicon liquid level in ingot furnace
The current length of wire.
S12：The reference length of current length and wire is compared.
Because there is certain corresponding relationship with the height of silicon liquid level in the length of wire, metal can be passed through
The variation of filament length degree intuitively reflects whether silicon liquid occurs overflow.It is to judge silicon liquid in the length variation by wire
When no generation overflow, it can be compared with the reference length of corresponding wire by the current length of the wire recorded
To judge whether silicon liquid occurs overflow.Wherein, the reference length of wire is when overflow do not occur for silicon liquid and the height of silicon liquid level
The length of corresponding wire.
S13：If current length is more than reference length, overflow occurs for silicon liquid；If current length is not more than reference length,
Overflow does not occur for silicon liquid.
If overflow occurs for silicon liquid, silicon liquid level can decline, and correspondingly, the current length of the wire recorded is then
The reference length of wire can be more than, namely when the current length of the wire of record is more than the reference length of wire, i.e.,
Show that overflow has occurred in silicon liquid；If overflow does not occur for silicon liquid, silicon liquid level will not decline, at this point, the current length of wire
Degree is then not more than reference length, namely when the current length of the wire recorded is not more than the reference length of wire,
Show that overflow does not occur for silicon liquid.That is, the reference length of the current length and wire by the wire recorded
Relationship can intuitively, fast judge whether silicon liquid occurs overflow, to improve silicon liquid overflow detection promptness, reduce
Economic damage caused by due to silicon liquid overflow, reduces the probability that safety accident occurs.
A kind of silicon liquid overflow detection method provided in an embodiment of the present invention is completely melt stage, reference length tool in silicon material
Theoretical length when body is completely melt for silicon material corresponding to wire；
In the silicon liquid directional solidification stage, when reference length is specially the detection of liquid detection device last time corresponding to wire
Length.
In casting polysilicon process, when the silicon material for being packed into crucible is completely melt and overflow does not occur, the height of silicon liquid level
Degree remains unchanged, and when the timing of silicon material one that be put into, by calculating the theoretical level that can be obtained corresponding to silicon liquid level, then this
When correspond to there are the theoretical lengths of a wire.Therefore, it is completely melt the stage in silicon material, the reference length of wire is silicon
Theoretical length of material when being completely melt corresponding to wire, by by the current length of wire and corresponding reference length at this time
It is compared to judge whether silicon liquid occurs overflow.
In the silicon liquid directional solidification stage, silicon liquid lower part begins to change into solid, since the density of polysilicon solid is molten less than silicon
The density of liquid, therefore, the volume of solid can become larger, and correspondingly, silicon liquid level can increase.Therefore, if liquid detection device last time is visited
Silicon liquid overflow does not occur when survey, then can using the length corresponding to wire when detection as the reference length of wire,
Length when being detected using liquid detection device last time corresponding to wire is as the reference length of wire.When silicon liquid occurs
When overflow, the amplitude that silicon liquid level declines can make the raised height of silicon liquid level much larger than because bottom generates solid, therefore, pass through gold
The relationship for belonging to the current length of silk and the reference length of wire still can determine whether out whether silicon liquid occurs overflow.
A kind of silicon liquid overflow detection method provided in an embodiment of the present invention may be used also after determining that overflow does not occur for silicon liquid
To include：
In the silicon liquid directional solidification stage, liquid detection device is put into silicon liquid using wire, so that detecting liquid level fills
It sets and is in contact with polysilicon, record the length of wire；
Corresponding length is compared when the length of record is located at crucible bottom with wire, to obtain polysilicon
Growing height；
According to the variation of the time interval of liquid detection device detection and the wire length recorded, polysilicon is obtained
The speed of growth.
In the silicon liquid directional solidification stage, however, it is determined that overflow does not occur for silicon liquid, then can be filled detecting liquid level using wire
It sets and gos deep into silicon liquid, so that liquid detection device is contacted with the polysilicon that lower part solidification generates.Liquid detection device with
After polysilicon is in contact, the length of wire is recorded.The length for the wire that record obtains is located at crucible bottom with wire
Corresponding length is compared when portion, and the difference of the two is the growing height of polysilicon.
In addition to this, the length for the wire that the when of detecting every time is recorded is carried out to solid liquid interface according to liquid detection device
It can obtain the length variation of wire, the time interval detected to solid liquid interface in conjunction with liquid detection device then can be with
Calculate the speed of growth of polysilicon.It is of course also possible to which liquid detection device is in contact with silicon liquid level, pass through silicon liquid level height
Variation obtain the variation of wire length, and then the time interval of detection is combined to calculate the speed of growth of polysilicon.
That is, not only can detect whether silicon liquid overflows using silicon liquid overflow detection device provided by the present invention
Stream, can also measure the growing height of polysilicon and the speed of growth of polysilicon.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the element that the process, method, article or equipment including a series of elements is intrinsic.
Do not have in the case of more limiting, the element limited by sentence "including a ...", it is not excluded that including the element
There is also other identical elements in process, method, article or equipment.In addition, above-mentioned technology provided in an embodiment of the present invention
The part consistent with technical solution realization principle is corresponded in the prior art and unspecified in scheme, in order to avoid excessively repeat.
The foregoing description of the disclosed embodiments enables those skilled in the art to realize or use the present invention.To this
A variety of modifications of a little embodiments will be apparent for a person skilled in the art, and the general principles defined herein can
Without departing from the spirit or scope of the present invention, to realize in other embodiments.Therefore, the present invention will not be limited
It is formed on the embodiments shown herein, and is to fit to consistent with the principles and novel features disclosed in this article widest
Range.
Claims (10)
1. a kind of silicon liquid overflow detection device, which is characterized in that including：
Wire；
It is connected with the lower end of the wire, the detecting liquid level dress for judging whether to be in contact with the silicon liquid level in ingot furnace
It sets；
It is arranged in the top of ingot furnace, for winding the wire, and adjusts the wire under the drive of the drive
Length wound portion.
2. silicon liquid overflow detection device according to claim 1, which is characterized in that the liquid detection device includes：
Detecting liquid level part for being in contact with silicon liquid level；
It is connected with the wire, is used for during the wire drives the detecting liquid level part to be moved to silicon liquid level,
The measuring appliance that the pulling force of the wire is measured.
3. silicon liquid overflow detection device according to claim 2, which is characterized in that the measuring appliance is specially pull sensing
Device.
4. silicon liquid overflow detection device according to claim 2, which is characterized in that the measuring appliance is specially velocity pick-up
Device.
5. silicon liquid overflow detection device according to claim 2, which is characterized in that the detecting liquid level part is specially ceramics
Detection part.
6. silicon liquid overflow detection device according to claim 5, which is characterized in that the ceramic probe part is specially to be carbonized
Silicon detection part or silicon nitride detection part.
7. silicon liquid overflow detection device according to claim 1, which is characterized in that the wire is specially tungsten filament, molybdenum
Silk, any one in stainless steel steel wire.
8. a kind of silicon liquid overflow detection method, which is characterized in that be based on silicon liquid overflow as described in any one of claim 1 to 7
Detection device, including：
When wire makes liquid detection device be in contact with silicon liquid level under the drive of wound portion, working as the wire is recorded
Preceding length；
The current length is compared with the reference length of the wire；
If the current length is more than the reference length, overflow occurs for silicon liquid；If the current length is not more than the ginseng
Length is examined, then overflow does not occur for silicon liquid.
9. silicon liquid overflow detection method according to claim 8, which is characterized in that it is completely melt the stage in silicon material, it is described
Reference length is specially the theoretical length corresponding to wire when silicon material is completely melt；
In the silicon liquid directional solidification stage, reference length wire when being specially the liquid detection device last time detection
Corresponding length.
10. silicon liquid overflow detection method according to claim 8 further includes after determining that overflow does not occur for silicon liquid：
In the silicon liquid directional solidification stage, the liquid detection device is put into silicon liquid using the wire, so that the liquid
Face detection device is in contact with polysilicon, records the length of the wire；
Corresponding length is compared when the length of record is located at crucible bottom with the wire, to obtain polysilicon
Growing height；
According to the variation of the time interval of liquid detection device detection and the wire length recorded, obtain more
The speed of growth of crystal silicon.
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| CN115597682A (en) * | 2022-12-13 | 2023-01-13 | 常州臻晶半导体有限公司（Cn） | Method for accurately measuring liquid level height value in growth process of silicon carbide single crystal by liquid phase method |
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