CN111792931B - 一种复合陶瓷材料及其制备方法 - Google Patents
一种复合陶瓷材料及其制备方法 Download PDFInfo
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- 239000002131 composite material Substances 0.000 title claims abstract description 55
- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 229910010252 TiO3 Inorganic materials 0.000 claims abstract description 73
- 239000000843 powder Substances 0.000 claims abstract description 44
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052582 BN Inorganic materials 0.000 claims abstract description 39
- 239000002245 particle Substances 0.000 claims abstract description 20
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims abstract description 18
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000126 substance Substances 0.000 claims abstract description 14
- 229910000029 sodium carbonate Inorganic materials 0.000 claims abstract description 9
- LEDMRZGFZIAGGB-UHFFFAOYSA-L strontium carbonate Chemical compound [Sr+2].[O-]C([O-])=O LEDMRZGFZIAGGB-UHFFFAOYSA-L 0.000 claims abstract description 9
- 229910000018 strontium carbonate Inorganic materials 0.000 claims abstract description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- 238000005245 sintering Methods 0.000 claims description 20
- 238000000498 ball milling Methods 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 14
- 238000001035 drying Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 13
- 239000001257 hydrogen Substances 0.000 claims description 12
- 229910052739 hydrogen Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 239000000203 mixture Substances 0.000 claims description 12
- 238000002156 mixing Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 8
- 238000007873 sieving Methods 0.000 claims description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 5
- 239000011812 mixed powder Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 238000000227 grinding Methods 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 238000010304 firing Methods 0.000 claims description 2
- 229910001873 dinitrogen Inorganic materials 0.000 claims 1
- 238000004146 energy storage Methods 0.000 abstract description 29
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000011734 sodium Substances 0.000 description 57
- 239000000919 ceramic Substances 0.000 description 43
- 230000015556 catabolic process Effects 0.000 description 21
- 230000005684 electric field Effects 0.000 description 11
- 239000003990 capacitor Substances 0.000 description 9
- 239000003989 dielectric material Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
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- 239000010410 layer Substances 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 229910003378 NaNbO3 Inorganic materials 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011363 dried mixture Substances 0.000 description 2
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- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- -1 Polypropylene Polymers 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- FSAJRXGMUISOIW-UHFFFAOYSA-N bismuth sodium Chemical compound [Na].[Bi] FSAJRXGMUISOIW-UHFFFAOYSA-N 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 239000004126 brilliant black BN Substances 0.000 description 1
- 235000012709 brilliant black BN Nutrition 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000000643 oven drying Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- GMMAPXRGRVJYJY-UHFFFAOYSA-J tetrasodium 4-acetamido-5-hydroxy-6-[[7-sulfonato-4-[(4-sulfonatophenyl)diazenyl]naphthalen-1-yl]diazenyl]naphthalene-1,7-disulfonate Chemical compound [Na+].[Na+].[Na+].[Na+].OC1=C2C(NC(=O)C)=CC=C(S([O-])(=O)=O)C2=CC(S([O-])(=O)=O)=C1N=NC(C1=CC(=CC=C11)S([O-])(=O)=O)=CC=C1N=NC1=CC=C(S([O-])(=O)=O)C=C1 GMMAPXRGRVJYJY-UHFFFAOYSA-J 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/475—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on bismuth titanates
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
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- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
Description
实施例 | 击穿场强E<sub>b</sub>(kV/cm) | 储能密度W<sub>rec</sub>(J/cm<sup>3</sup>) | 储能效率η(%) |
一 | 170 | 2.00 | 93.0 |
二 | 220 | 2.58 | 91.2 |
三 | 293 | 3.54 | 90.8 |
四 | 350 | 4.36 | 90.0 |
五 | 320 | 3.86 | 91.7 |
Claims (9)
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CN111792931B true CN111792931B (zh) | 2022-06-24 |
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CN112341192B (zh) * | 2020-11-20 | 2022-07-22 | 西安合容新能源科技有限公司 | 一种高储能密度钛酸铋钠基无铅介质材料及其制备方法 |
CN113149640B (zh) * | 2021-04-06 | 2023-05-09 | 宁波大学 | 一种高温高能高效车用逆变电容器核心材料的制备方法 |
CN114573338B (zh) * | 2022-02-25 | 2023-12-26 | 东莞市普隆电子有限公司 | 一种高储能密度介电陶瓷的制备方法及应用 |
CN114702713B (zh) * | 2022-05-05 | 2022-12-09 | 北京理工大学 | 一种铌酸银纤维掺杂聚偏氟乙烯复合薄膜的制备方法 |
JP2024048494A (ja) * | 2022-09-28 | 2024-04-09 | マツダ株式会社 | スイッチングモジュールおよびインバータ |
Citations (5)
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JPH11330357A (ja) * | 1998-05-08 | 1999-11-30 | Fujitsu Ltd | 半導体集積回路用キャパシタ及びその製造方法 |
CN101565305A (zh) * | 2009-03-27 | 2009-10-28 | 郜长福 | 高温无铅ptc材料以及生产工艺 |
CN109180181A (zh) * | 2018-09-28 | 2019-01-11 | 西安交通大学 | 一种无铅弛豫反铁电陶瓷储能材料及其制备方法 |
CN110312692A (zh) * | 2017-02-03 | 2019-10-08 | 赛尔科技有限公司 | 包含赝立方相的陶瓷材料、其制备方法和用途 |
CN110467463A (zh) * | 2019-09-19 | 2019-11-19 | 河南工程学院 | 一种铌酸锶钡/氮化硼三维网络材料及制备方法 |
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Patent Citations (5)
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JPH11330357A (ja) * | 1998-05-08 | 1999-11-30 | Fujitsu Ltd | 半導体集積回路用キャパシタ及びその製造方法 |
CN101565305A (zh) * | 2009-03-27 | 2009-10-28 | 郜长福 | 高温无铅ptc材料以及生产工艺 |
CN110312692A (zh) * | 2017-02-03 | 2019-10-08 | 赛尔科技有限公司 | 包含赝立方相的陶瓷材料、其制备方法和用途 |
CN109180181A (zh) * | 2018-09-28 | 2019-01-11 | 西安交通大学 | 一种无铅弛豫反铁电陶瓷储能材料及其制备方法 |
CN110467463A (zh) * | 2019-09-19 | 2019-11-19 | 河南工程学院 | 一种铌酸锶钡/氮化硼三维网络材料及制备方法 |
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Effective date of registration: 20240425 Address after: 523000 No. 1 science and technology nine road, Songshan Lake Science and Technology Industrial Park, Dongguan, Guangdong Patentee after: GUANGDONG HUST INDUSTRIAL TECHNOLOGY Research Institute Country or region after: China Patentee after: HUAZHONG University OF SCIENCE AND TECHNOLOGY Address before: 523000 No. 1 science and technology nine road, Songshan Lake Science and Technology Industrial Park, Dongguan, Guangdong Patentee before: GUANGDONG HUST INDUSTRIAL TECHNOLOGY Research Institute Country or region before: China |