CN111792919A - MgO-TiO烧结体靶及其制造方法 - Google Patents

MgO-TiO烧结体靶及其制造方法 Download PDF

Info

Publication number
CN111792919A
CN111792919A CN202010534063.0A CN202010534063A CN111792919A CN 111792919 A CN111792919 A CN 111792919A CN 202010534063 A CN202010534063 A CN 202010534063A CN 111792919 A CN111792919 A CN 111792919A
Authority
CN
China
Prior art keywords
mgo
tio
sintered body
sputtering
powder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202010534063.0A
Other languages
English (en)
Chinese (zh)
Inventor
高见英生
中村祐一郎
荒川笃俊
荻野真一
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jks Metal Co ltd
JX Nippon Mining and Metals Corp
Original Assignee
Jks Metal Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jks Metal Co ltd filed Critical Jks Metal Co ltd
Publication of CN111792919A publication Critical patent/CN111792919A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/03—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite
    • C04B35/04—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite based on magnesium oxide
    • C04B35/053—Fine ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/74—Record carriers characterised by the form, e.g. sheet shaped to wrap around a drum
    • G11B5/82—Disk carriers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/78—Grain sizes and shapes, product microstructures, e.g. acicular grains, equiaxed grains, platelet-structures
    • C04B2235/786—Micrometer sized grains, i.e. from 1 to 100 micron

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
CN202010534063.0A 2013-03-29 2014-03-04 MgO-TiO烧结体靶及其制造方法 Pending CN111792919A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2013073239 2013-03-29
JP2013-073239 2013-03-29
CN201480002503.0A CN104661983A (zh) 2013-03-29 2014-03-04 MgO-TiO烧结体靶及其制造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201480002503.0A Division CN104661983A (zh) 2013-03-29 2014-03-04 MgO-TiO烧结体靶及其制造方法

Publications (1)

Publication Number Publication Date
CN111792919A true CN111792919A (zh) 2020-10-20

Family

ID=51623487

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201480002503.0A Pending CN104661983A (zh) 2013-03-29 2014-03-04 MgO-TiO烧结体靶及其制造方法
CN202010534063.0A Pending CN111792919A (zh) 2013-03-29 2014-03-04 MgO-TiO烧结体靶及其制造方法

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN201480002503.0A Pending CN104661983A (zh) 2013-03-29 2014-03-04 MgO-TiO烧结体靶及其制造方法

Country Status (6)

Country Link
JP (1) JP5925907B2 (ja)
CN (2) CN104661983A (ja)
MY (1) MY169936A (ja)
SG (1) SG11201501372QA (ja)
TW (1) TWI616425B (ja)
WO (1) WO2014156497A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016088867A1 (ja) * 2014-12-05 2016-06-09 宇部マテリアルズ株式会社 スパッタリング用ＭｇＯターゲット材及び薄膜
JP6489694B2 (ja) * 2015-09-08 2019-03-27 株式会社高純度化学研究所 スパッタリングターゲット
JP6935869B2 (ja) * 2018-06-27 2021-09-15 昭和電工株式会社 熱アシスト磁気記録媒体および磁気記憶装置
US11444292B2 (en) 2018-12-27 2022-09-13 Robert Bosch Gmbh Anticorrosive and conductive material
JP7246232B2 (ja) * 2019-03-29 2023-03-27 Ｊｘ金属株式会社 スパッタリングターゲット部材、スパッタリングターゲット、スパッタリングターゲット部材の製造方法、及びスパッタ膜の製造方法
TWI770959B (zh) 2021-04-26 2022-07-11 光洋應用材料科技股份有限公司 複合氧化物靶材及其製法
CN115246732A (zh) * 2021-04-28 2022-10-28 光洋应用材料科技股份有限公司 复合氧化物靶材及其制法
CN113421733B (zh) * 2021-06-15 2022-05-27 季华实验室 一种增加铁磁薄膜材料的垂直磁各向异性的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193467A (ja) * 1987-10-01 1989-04-12 Toshiba Tungaloy Co Ltd 酸化物系セラミックス
CN101925555A (zh) * 2008-01-28 2010-12-22 日本钨合金株式会社 多晶MgO烧结体及其制造方法以及溅射用MgO靶材
WO2013005690A1 (ja) * 2011-07-01 2013-01-10 宇部マテリアルズ株式会社 スパッタリング用ＭｇＯターゲット

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102365385B (zh) * 2009-03-27 2014-07-30 吉坤日矿日石金属株式会社 Ti-Nb系氧化物烧结体溅射靶、Ti-Nb系氧化物薄膜及该薄膜的制造方法
US8993134B2 (en) * 2012-06-29 2015-03-31 Western Digital Technologies, Inc. Electrically conductive underlayer to grow FePt granular media with (001) texture on glass substrates

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0193467A (ja) * 1987-10-01 1989-04-12 Toshiba Tungaloy Co Ltd 酸化物系セラミックス
CN101925555A (zh) * 2008-01-28 2010-12-22 日本钨合金株式会社 多晶MgO烧结体及其制造方法以及溅射用MgO靶材
WO2013005690A1 (ja) * 2011-07-01 2013-01-10 宇部マテリアルズ株式会社 スパッタリング用ＭｇＯターゲット

Also Published As

Publication number Publication date
SG11201501372QA (en) 2015-05-28
WO2014156497A1 (ja) 2014-10-02
JP5925907B2 (ja) 2016-05-25
MY169936A (en) 2019-06-18
CN104661983A (zh) 2015-05-27
JPWO2014156497A1 (ja) 2017-02-16
TWI616425B (zh) 2018-03-01
TW201500323A (zh) 2015-01-01

Similar Documents

Publication Publication Date Title
JP5925907B2 (ja) ＭｇＯ−ＴｉＯ焼結体ターゲット及びその製造方法
JP5290468B2 (ja) Ｃ粒子が分散したＦｅ−Ｐｔ系スパッタリングターゲット
TWI550114B (zh) Ｆｅ－Ｐｔ－Ｃ系濺鍍靶
JP5457615B1 (ja) 磁気記録膜形成用スパッタリングターゲット及びその製造方法
CN104662606B (zh) Fe-Pt基磁性材料烧结体
US10090012B2 (en) Fe-bases magnetic material sintered compact
EP3015566B1 (en) Magnetic material sputtering target and method for producing same
WO2014064995A1 (ja) 非磁性物質分散型Ｆｅ－Ｐｔ系スパッタリングターゲット
WO2018047978A1 (ja) 強磁性材スパッタリングターゲット
JP5913620B2 (ja) Ｆｅ−Ｐｔ系焼結体スパッタリングターゲット及びその製造方法
JP5705993B2 (ja) Ｃ粒子が分散したＦｅ−Ｐｔ−Ａｇ−Ｃ系スパッタリングターゲット及びその製造方法
JP6692724B2 (ja) 非磁性材料分散型Ｆｅ−Ｐｔ系スパッタリングターゲット
JP5944580B2 (ja) スパッタリングターゲット
WO2013125296A1 (ja) クロム酸化物を含有する強磁性材スパッタリングターゲット
JP2014041682A (ja) 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
JP6396594B2 (ja) Ｍｇ−Ｔｉ−Ｏスパッタリングターゲット及びその製造方法
CN111183244B (zh) 强磁性材料溅射靶
WO2019187244A1 (ja) スパッタリングターゲット
JP2014177675A (ja) 希土類磁石用スパッタリングターゲット及びその製造方法
WO2014141789A1 (ja) 磁気記録膜形成用スパッタリングターゲット及び該ターゲットの製造に用いる炭素原料

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination