CN111725320A - 一种结型积累层碳化硅横向场效应晶体管及其制作方法 - Google Patents
一种结型积累层碳化硅横向场效应晶体管及其制作方法 Download PDFInfo
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- 238000000151 deposition Methods 0.000 claims description 6
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 230000015556 catabolic process Effects 0.000 abstract description 11
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Abstract
本发明公开了一种结型积累层碳化硅横向场效应晶体管及其制作方法。该器件设置积累介质层，覆盖N型漂移区表面以及N+漏区表面左端区域，在积累介质层上设置碳化硅材料的外延层；在外延层的左侧端部、右侧端部分别通过离子注入形成两处P型区，并在所述外延层中邻接右端P型区通过离子注入形成N+区；在栅极介质层表面形成栅极，栅极与左端P型区邻接；在N+漏区表面的右端区域形成漏极，漏极14与右端P型区邻接。该器件在导通时，可以通过结型积累层在漂移区中产生浓度较高的电子，大幅度降低器件的导通电阻；器件关断时，结型积累层可起到场板的作用，有效地降低栅极边缘的电场峰值，从而提高器件的击穿电压。
Description
技术领域
本发明涉及半导体功率器件技术领域，具体涉及一种横向金属氧化物半导体场效应管。
背景技术
碳化硅(SiC)是第三代半导体材料代表之一，是C元素和Si元素形成的化合物。跟传统半导体材料硅相比，它具有高临界击穿电场、高热导率等优势，是制造高压、高温、抗辐照功率半导体器件的优良半导体材料，也是目前商品化程度最高、技术最成熟的第三代半导体材料。碳化硅与硅材料的物理性能对比主要为：(1)临界击穿电场强度是硅材料近10倍；(2)热导率高，超过硅材料的3倍；(3)饱和电子漂移速度高，是硅材料的2倍；(4)抗辐照和化学稳定性好；(5)与硅材料一样，可以直接采用热氧化工艺在表面生长二氧化硅绝缘层。
碳化硅材料由于禁带宽度比较宽，临界击穿电场比较大，很容易获得高的击穿电压。然而对于横向器件，漂移区的掺杂浓度受到弱化表面电场(Reduced Surface Field，简称RESURF)条件的限制，无法简单的通过增大掺杂浓度来获得较低的电阻。
发明内容
本发明提出了一种结型积累层碳化硅横向场效应晶体管，能够进一步提高器件的击穿电压、同时降低比导通电阻。
本发明的技术方案如下：
一种结型积累层碳化硅横向场效应晶体管，包括：
碳化硅材料的P型衬底，以及衬底电极；
在P型衬底上分别形成的P型屏蔽层和N型漂移区，所述P型屏蔽层与N型漂移区相接；
在屏蔽层上分别形成的P型基区、P+源区和N+源区；其中P型基区与N型漂移区邻接，P+源区位于远离N型漂移区的一端，N+源区左、右两侧分别与P+源区、P型基区邻接；
在N型漂移区上部的右端区域形成的N+漏区；
栅极介质层，覆盖P型基区表面；
源极，位于P+源区和N+源区表面；
其特征在于，还包括：
积累介质层，覆盖N型漂移区表面以及N+漏区表面左端区域；
碳化硅材料的外延层，覆盖所述积累介质层；
在所述外延层的左侧端部、右侧端部分别通过离子注入形成第一P型区和第二P型区，并在所述外延层中邻接所述第二P型区通过离子注入形成N+区；所述N+区的左端不超出N+漏区左端对应的边界；
在栅极介质层表面形成栅极，栅极的右侧邻接第一P型区的左侧；
在N+漏区表面的右端区域形成漏极，漏极的左侧邻接第二P型区以及积累介质层的右侧。
本发明中，P型衬底、P型屏蔽层、N型漂移区、P型基区、P+源区、N+源区、N+漏区、外延层、N+区以及两处P型区均可采用碳化硅材料。
上述外延层可以为N型，也可以为P型，可以不掺杂或者掺杂浓度低于N+区、两处P型区。
可选地，所述P型衬底的掺杂浓度为1×1015cm-3～1×1016cm-3，所述N型漂移区的掺杂浓度为3×1016cm-3～8×1016cm-3，所述P型屏蔽层的掺杂浓度为6×1016cm-3～6×1017cm-3，所述P型基区的掺杂浓度5×1015cm-3～5×1016cm-3。
可选地，所述N型漂移区的深度为1-4微米。
可选地，所述积累介质层的材料为二氧化硅或氮化铝。
可选地，所述积累介质层的厚度为0.05-0.2微米。
可选地，所述外延层的掺杂浓度为1×1014cm-3～1×1016cm-3。
可选地，所述外延层的厚度为1～2微米。
可选地，所述第一P型区和第二P型区的掺杂浓度为1×1017cm-3～1×1018cm-3。
可选地，所述N+区的掺杂浓度为1×1017cm-3～1×1019cm-3。
上述结型积累层碳化硅横向场效应晶体管的一种制作方法，包括以下步骤：
1)取碳化硅材料的P型衬底，并在其背面形成衬底电极；
2)通过离子注入分别形成P型屏蔽层、N+源区、P+源区、P型基区、N型漂移区和N+漏区；
3)另选取1-2微米的外延层材料，在其底面生长积累介质层，然后通过键合工艺将积累介质层与N型漂移区以及部分N+漏区相连接；在外延层上通过离子注入形成左、右两端的P型区以及N+区；
4)在P型基区上方形成栅介质层，并淀积金属形成栅极，使得金属与外延层的左端P型区相连接；
5)在N+漏区上方淀积金属，形成漏极，使得金属与外延层的右端P型区相连接；
6)在器件表面形成钝化层。
本发明技术方案的有益效果如下：
器件导通时，通过结型积累层结构，在漂移区中产生浓度较高的积累层电子，弱化了导通对掺杂浓度的依赖关系，可大幅度降低器件的导通电阻；器件关断时，结型积累层可起到场板的作用，有效降低栅极边缘的电场峰值，从而提高器件的击穿电压。
本发明中设置两处P型区，使金属与半导体形成良好的欧姆接触。
由于在器件开启时，会在氧化层下方形成电子，但同时会在氧化层上方形成等量的空穴，设置N+区域用于阻断氧化层上方外延层中的空穴电流。
附图说明
图1为本发明的一个实施例的结构示意图。
图2是本发明的工作原理示意图。
图3是本发明实施例与常规碳化硅晶体管的击穿电压的对照示意图。
图4是本发明实施例与常规碳化硅晶体管的比导通电阻的对照示意图。
附图标号说明：
1-P型衬底；2-P型屏蔽层；3-P型基区；4-P+源区；5-源极；6-N+源极；7-栅极；8-栅介质层；9-P型区；10-积累介质层；11-外延层；12-N+区；13-P型区；14-漏极；15-N+漏区；16-N型漂移区；17-衬底电极。
具体实施方式
以下结合附图，通过实施例进一步详述本发明。
如图1所示，该结型积累层碳化硅横向场效应晶体管，包括：
碳化硅材料的P型衬底1，其背面形成衬底电极17；衬底掺杂浓度的典型值为1×1015cm-3～1×1016cm-3；
在P型衬底上形成的P型屏蔽层2，在屏蔽层上方形成N+源区6、P+源区4和P型基区3，基区的浓度由阈值电压决定；基区的典型掺杂浓度5×1015cm-3～5×1016cm-3；
在P型衬底上形成的N型漂移区16以及N+漏区15；漂移区的典型掺杂浓度3×1016cm-3～8×1016cm-3；漂移区的深度典型值为1-4微米；
在沟道上方形成的栅极介质层；
覆盖N型漂移区16表面以及N+漏区15表面左端区域的积累介质层10，积累介质层的厚度越小，导通电阻越低，典型值为0.05-0.2微米；介质材料可为二氧化硅、氮化铝等可与碳化硅材料具有良好界面特性的介质材料；
在积累介质层上方形成的外延层10，外延层的厚度在1～2微米；外延层的典型掺杂浓度1×1015cm-3～1×1016cm-3；
在外延层上分别进行通过注入形成左、右两端P型区9、13以及N+区12；外延层中P型区的典型掺杂浓度1×1017cm-3～1×1018cm-3；
在P+源区与N+源区的上方形成源极；
栅极7，覆盖栅极氧化层且与P型区9相接；
漏极13，位于漏区上方且与P型区13相接。
如图2所示，器件导通时，通过结型积累层结构(主要涉及栅极7、P型区9、积累介质层10、外延层11、N+区12、P型区13以及漏极14等)，引入了积累层电子，大幅度降低了器件的导通电阻；器件关断时，结型积累层可起到场板的作用，有效的降低栅极边缘的电场，从而提高器件的击穿电压。
该器件可按照以下步骤制备：
1)取碳化硅材料的P型衬底，并在其背面形成衬底电极；
2)通过离子注入分别形成P型屏蔽层、N+源区、P+源区、P型基区、N型漂移区和N+漏区；
3)另选取1-2微米的外延层材料，在其底面生长积累介质层，然后通过键合工艺将积累介质层与N型漂移区以及部分N+漏区相连接；在外延层上通过离子注入形成左、右两端的P型区以及N+区；
4)在P型基区上方形成栅介质层，并淀积金属形成栅极，使得金属与外延层的左端P型区相连接；
5)在N+漏区上方淀积金属，形成漏极，使得金属与外延层的右端P型区相连接；
6)在器件表面形成钝化层。
经仿真试验，对于N沟道碳化硅横向场效应晶体管，当漂移区长度为6μm时：如图3所示，常规的碳化硅晶体管的击穿电压为1000V左右，而采用本发明的结构，可以将器件的击穿电压提高到1300V左右，提高了30％；如图4所示，常规的碳化硅横向场效应晶体管的比导通电阻为14mΩ.cm2左右，而本发明可以将器件的比导通电阻降低到6mΩ.cm2，下降了57％。
当然，本发明中的结型积累层碳化硅横向场效应晶体管也可以为P沟道，其结构与N沟道结型积累层碳化硅场效应横向晶体管等同，在此不再赘述。
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明技术原理的前提下，还可以做出若干改进和替换，这些改进和替换的方案也落入本发明的保护范围。
Claims (10)
1.一种结型积累层碳化硅横向场效应晶体管，包括：
碳化硅材料的P型衬底(1)，以及衬底电极(17)；
在P型衬底上分别形成的P型屏蔽层(2)和N型漂移区(16)，所述P型屏蔽层(2)与N型漂移区(16)相接；
在屏蔽层上分别形成的P型基区(3)、P+源区(4)和N+源区(6)；其中P型基区(3)与N型漂移区(16)邻接，P+源区(4)位于远离N型漂移区(16)的一端，N+源区(6)左、右两侧分别与P+源区(4)、P型基区(3)邻接；
在N型漂移区(16)上部的右端区域形成的N+漏区(15)；
栅极介质层(8)，覆盖P型基区(3)表面；
源极(5)，位于P+源区(4)和N+源区(6)表面；
其特征在于，还包括：
积累介质层(10)，覆盖N型漂移区(16)表面以及N+漏区(15)表面左端区域；
碳化硅材料的外延层(11)，覆盖所述积累介质层(10)；
在所述外延层的左侧端部、右侧端部分别通过离子注入形成第一P型区(9)和第二P型区(13)，并在所述外延层中邻接所述第二P型区(13)通过离子注入形成N+区(12)；所述N+区(12)的左端不超出N+漏区(15)左端对应的边界；
在栅极介质层(8)表面形成栅极(7)，栅极(7)的右侧邻接第一P型区(9)的左侧；
在N+漏区(15)表面的右端区域形成漏极(14)，漏极(14)的左侧邻接第二P型区(13)以及积累介质层(10)的右侧。
2.根据权利要求1所述的结型积累层碳化硅横向场效应晶体管，其特征在于：所述P型衬底(1)的掺杂浓度为1×1015cm-3～1×1016cm-3，所述N型漂移区(16)的掺杂浓度为3×1016cm-3～8×1016cm-3，所述P型屏蔽层(2)的掺杂浓度为6×1016cm-3～6×1017cm-3，所述P型基区(3)的掺杂浓度5×1015cm-3～5×1016cm-3。
3.根据权利要求1所述的结型积累层碳化硅横向场效应晶体管，其特征在于：所述N型漂移区(16)的深度为1-4微米。
4.根据权利要求1所述的结型积累层碳化硅横向场效应晶体管，其特征在于：所述积累介质层(10)的材料为二氧化硅或氮化铝。
5.根据权利要求1所述的结型积累层碳化硅横向场效应晶体管，其特征在于：所述积累介质层(10)的厚度为0.05-0.2微米。
6.根据权利要求1所述的结型积累层碳化硅横向场效应晶体管，其特征在于：所述外延层(11)的掺杂浓度为1×1014cm-3～1×1016cm-3。
7.根据权利要求1所述的结型积累层碳化硅横向场效应晶体管，其特征在于：所述外延层(11)的厚度为1～2微米。
8.根据权利要求1或6所述的结型积累层碳化硅横向场效应晶体管，其特征在于：所述第一P型区(9)和第二P型区(13)的掺杂浓度为1×1017cm-3～1×1018cm-3。
9.根据权利要求1或6所述的结型积累层碳化硅横向场效应晶体管，其特征在于：所述N+区(12)的掺杂浓度为1×1017cm-3～1×1019cm-3。
10.权利要求1所述结型积累层碳化硅横向场效应晶体管的制作方法，其特征在于，包括以下步骤：
1)取碳化硅材料的P型衬底，并在其背面形成衬底电极；
2)通过离子注入分别形成P型屏蔽层、N+源区、P+源区、P型基区、N型漂移区和N+漏区；
3)另选取1-2微米的外延层材料，在其底面生长积累介质层，然后通过键合工艺将积累介质层与N型漂移区以及部分N+漏区相连接；在外延层上通过离子注入形成左、右两端的P型区以及N+区；
4)在P型基区上方形成栅介质层，并淀积金属形成栅极，使得金属与外延层的左端P型区相连接；
5)在N+漏区上方淀积金属，形成漏极，使得金属与外延层的右端P型区相连接；
6)在器件表面形成钝化层。
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