CN1117136A - Detecting and analysing method and apparatus for reliability of semiconductor laser - Google Patents
Detecting and analysing method and apparatus for reliability of semiconductor laser Download PDFInfo
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- CN1117136A CN1117136A CN 95107991 CN95107991A CN1117136A CN 1117136 A CN1117136 A CN 1117136A CN 95107991 CN95107991 CN 95107991 CN 95107991 A CN95107991 A CN 95107991A CN 1117136 A CN1117136 A CN 1117136A
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Abstract
The said apparatus mainly consists of microcomputer, sample box, data acquisition board, current-voltage convertor, optoelectrical detector, voltage-current convertor, signal source and phase-lock amplifier. By means of testing the conductance curve, thermal resistance, power and temp.-varying curve of device, its reliability is analyzed. The present invention realizes the non-destructive detection and fast analysis of semiconductor laser devices.
Description
The invention belongs to a kind of method for testing and analyzing and device, particularly the method and apparatus of semiconductor laser parameter test, fail-safe analysis.
Existing reliability of semiconductor laser (life-span) detection method adopts electric aging process.Threshold current by measuring detected device, output power etc. by improving temperature, strengthen the quick aging method of electric current, are fallen the big device screening of optical power change rate under the electric current necessarily.Concrete steps are that detected device is positioned on the agingtable, are under 80 ℃, electric current 150mA condition aging 72 hours in temperature, measure the variation before and after aging of luminous power certain electric current under or threshold current, think rate of change big be unreliable device.This check and analysis method, spended time is long, can not detect in real time, and agingtable will have enough capacity (making very greatly), and this not only will have very high cost, expend very big electric energy, and production efficiency is low; This check and analysis method is vulnerable to thermoelectric the impact because detected device energising warm-up time is long, makes device damage or decreases ring; This check and analysis method is because condition is identical, and load is different concerning different components under steady current or firm power, if any device not luminous substantially under this current condition, the but generation that has swashs penetrates.That is, the device that has has been harsh to this condition, and the device that has seems again, and condition is too wide, thereby or do not reach the purpose of screening, influence the quality of product, perhaps condition is too harsh, and device is obviously reduced serviceable life.
With this bright device that is close most be " laser diode integrated test system ".Mainly constitute by direct supply, microcomputer, data acquisition board, integrating sphere luminous power detection system, temperature control system, Digital PID Controller, double monochromator, far-field measurement system, measuring head and peripherals.Current source card control 0～2A direct supply adds continuous adjustable DC current to laser instrument in the controller, the analogue measurement card also is contained in the controller slot, come the various parameters of Laser Measurement device, the temperature control card sends finger by computing machine can remove to drive the TE drive plate, heat or desuperheat to laser instrument, finally reach the temperature that controller is set.This cover test macro can be measured the threshold current I of semiconductor laser
Th, forward junction voltage V
s, the relation curve P-I curve of luminous power and drive current, parameter or parameters such as differential luminous power dP/dI and far-field intensity distribution, spectral response, but have characteristics such as alternating temperature, easy to operate, precision height.But this test macro can only provide the parameter of some devices, can not make evaluation to the q﹠r of device; But also knot characteristic parameter m that can not measuring element, b parameter, height h and thermal resistance R sink
TAnd the rate of temperature change of these parameters.
The present invention utilizes the device of complete micro-processor controlled semiconductor laser parameter test and reliability check and analysis, by test to electric derivative curve, thermal resistance etc., obtain characteristic parameter (parameter), through the quality of analysis-by-synthesis differentiation device, reach easy, harmless, apace a plurality of devices carried out the purpose that reliability detects.
Reliability of semiconductor laser check and analysis method of the present invention mainly is by the test to the electric derivative curve of detected device and alternating temperature electricity derivative curve, the Partial Feature parameter that obtains device varies with temperature rate, these data that obtain are compared with normal parameter, and the noise spectra of semiconductor lasers q﹠r is estimated.
Concrete step is described below:
The first, measure the electric derivative curve of detected semiconductor laser, i.e. IdV/dI～I curve.Wherein I is the drive current of detected device, and V is the junction voltage of detected device.General IdV/dI～the I curve shape as shown in Figure 1.
The second, from electric derivative curve, obtain threshold current I
Th, to threshold current I
ThTwo sections curves of front and back carry out fitting a straight line, obtain two slopes and intercept, and the intercept of threshold value forward part is mkT/q, and slope is R
S1, threshold value rear section intercept is b, slope R
S2, m wherein is the knot characteristic parameter, and k is a Boltzmann constant, and T is a probe temperature, and q is an electron charge, b is the b parameter, R
S1, R
S2Be the resistance in series before and after the threshold value.By threshold current I
ThThe maximum value and the minimizing difference of near curve record threshold current I
ThThe full degree of closing of the junction voltage at place, height h (mV) promptly sinks.
The 3rd, change probe temperature T, record Δ b/ Δ T by the electric derivative curve before and after the alternating temperature, promptly the b parameter is with the rate of change of temperature T.Can also record threshold current I
ThRate of change Δ I with temperature T
Th/ Δ T, and extrapolate characteristic temperature T
o
The 4th, each parameter of gained is compared with the normal value (normal parameter value) of these parameters of the semiconductor laser of this structure, q﹠r to detected device is made evaluation, the rule of estimating is: the height h value of sinking is not less than the normal parameter value, b parameter, knot characteristic parameter m, resistance in series R
s, the b parameter is not more than the normal parameter value with variation of temperature rate Δ b/ Δ T is the device of good reliability.
The 5th, said normal parameter value is to detected a collection of device sampling, selects qualified samples with conventional reliability detection and aging method and obtains after tested.
The electricity derivative by line at threshold current I
ThThe place occurs, and due to be that junction voltage is full closed, to device of the same race, the h value difference is different to be that factors such as material parameter in the device preparation process, structural parameters difference and technology dispersiveness cause the device that the h value is less than normal, often poor reliability.Knot characteristic parameter m is subjected to contact nonlinear, heterojunction boundary situation: non-radiative compound, and the influence of factors such as electric leakage, to a semiconductor laser, the size of m value is the sign of quality of materials and technological level.Therefore, in general the device m value of good reliability is less.Resistance in series Rs generally represents the contact quality of device, R
sBigger than normal may be higher etc. relevant with dimension of picture or pressure welding quality or cap layer resistivity.The b parameter value is big, and electric derivative curve is at threshold current I
ThThe rear section is bent downwardly, normally because there is one and to tie the non-linear channels that is in parallel etc. relevant in device.The big device of Δ b/ Δ T is unreliable device certainly so the b parameter value is big.
The method of test among the present invention electricity derivative curve IdV/dI～I be by one of microcomputer software control digital to analog converter output with to be added in the corresponding voltage of the electric current that drives on the detected device, obtaining time dependent drive current I through the voltage-to-current conversion is added on the detected device, with a sinusoidal signal drive current I is modulated simultaneously, the frequency of sinusoidal signal can be 10KHz, detect its fundamental component through lock-in amplifier and get dV/dI, send into microcomputer through analog to digital converter again, software is finished the product with I, and screen provides Idv/dI～I curve and calculates each parameter.
Because thermal resistance R
TBe the parameter that shows the semiconductor laser heat dispersion, thermal resistance R
TSize relevant with the thermal conductivity and the geometric configuration of material.Thermal resistance R
TBeing the key factor that causes knot to heat up, is the main cause that causes the device parameters deterioration, thermal resistance R
TThe continuous working at room temperature of big device.Therefore, thermal resistance R
TIt also is one of foundation of judging reliability of semiconductor laser.
Of the present invention to thermal resistance R
TTest adopt the forward voltage drop method, concrete test process comprises: when temperature is T, detected device is added a measuring current that dutycycle is minimum, record the forward junction pressure drop V under this electric current
LA broad pulse heating current I again superposes
T, record the forward junction voltage V under the measuring current after the thermal equilibrium
HWith heating current I
TUnder knot pressure drop V, must heat electrical power P
T=I
TV δ, wherein δ is heating current I
TDutycycle; In another temperature T ' time under measuring current, record forward junction voltage V '
L, then obtain the temperature coefficient K=(V of the forward voltage drop of device
L-V '
L)/(T-T '); Get thermal resistance R at last
T=(V
L-V
H)/KP
T
The present invention adopts the large tracts of land germanium detector to make luminous power to detect to luminous power curve (P-I curve) and the luminous power differential dP/dI to drive current, by analog to digital converter light intensity magnitude is sent into microcomputer with digital form and records.
With reliability of semiconductor laser check and analysis method of the present invention PBC structure In Ga/AsP/InP laser instrument is carried out check and analysis, each parameter value of the device of good reliability is R
s＜10 Ω, m＜3.5, b＜10mV, Δ b/ Δ T＜0.4mV/K, h＞50mV, R
T＜50 Ω.
Invented test function and the device of device reliability check and analysis function---the reliability of semiconductor laser check and analysis instrument that has the multiple parameter of test component concurrently according to reliability of semiconductor laser check and analysis method of the present invention.Device of the present invention with existing " laser diode integrated test system " relatively except that identical function, can be tested and draws the electric derivative curve of device; Can one by one test each parameter fast to a plurality of detected devices; Can record the unavailable b parameter of other instruments, the height h that sinks, knot characteristic parameter m and with the variation of temperature rate etc.; Can provide the result of determination of device quality and reliability.
The structure of reliability of semiconductor laser check and analysis instrument of the present invention mainly includes microcomputer 1, main frame 2,3 three parts of sales kit (SK).Wherein in the main frame 2 data acquisition board 4 is arranged, voltage-to-current translation circuit 7 and single-chip microcomputer temperature-controlling system 9; Specimen holder, current-voltage conversion circuit 10, photodetector 30, insulation can 22, temperature sensor, calandria 23 etc. are arranged in the sales kit (SK) 3.Said data acquisition board 4 includes digital to analog converter 5 and analog to digital converter 6, be inserted on microcomputer 1 expansion slot, digital to analog converter 5 is electrically connected with voltage-to-current translation circuit 7, by microcomputer 1 software control, the drive current I of linear change is added on the detected device 29 to make the voltage signal of digital to analog converter 5 output become in time through voltage-to-current translation circuit 7; Said photodetector 30 is converted into the photocurrent of detected device 29 outputs voltage signal through current-voltage conversion circuit 10 and is defeated by analog to digital converter 6, finishes the test to P～I curve and dP/dI～I curve; The junction voltage signal that detected device 29 provides is defeated by analog to digital converter 6, finishes thermal resistance R
TAnd the measurement of volt-ampere characteristic (V～I curve); The invention is characterized in, lock-in amplifier 8 and signal source 11 also are housed in main frame 2, the input end of lock-in amplifier 8 is connected with signal source 11 and detected device 29 electricity, and output terminal is connected with analog to digital converter 6 electricity; The sinusoidal signal of signal source 11 outputs is defeated by the drive current I of detected device 29 with the current constant mode modulation by voltage-to-current translation circuit 7, detect fundamental component dV/dI through lock-in amplifier 8, send into microcomputer 1 through analog to digital converter 6, finish the product of dV/dI and I, obtain electric derivative curve by software.
The concrete structure of sales kit (SK) 3 of the present invention can be referring to Fig. 3.Cabinet 21 is divided into movable the first half 3I and fixing the latter half 34.Can open loam cake easily like this, place detected device 29.The insulation can of making of thermal insulation material 22 is housed in cabinet 21, and specimen holder, calandria 23 etc. places in the insulation can 22.The invention is characterized in, place heating rod 24 in the middle of calandria 23, constitute the internal heat type structure, realization heat is transmitted fast, and detected device 29 is heated evenly; Said specimen holder includes sample holder 26, dovetail groove anchor clamps 27, heat sink anchor clamps 28.Sample holder 26 be fixed on calandria 23 above, such as fixing with screw 25, at a sample holder 26 plural dovetail groove anchor clamps 27 can be housed side by side, each dovetail groove anchor clamps 27 usefulness dormant screw 37 is fixing with sample holder 26, screw 36 is electrical isolation screws, guarantees that each dovetail groove anchor clamps 27 is with sample holder 26 electrical isolations.Detected device 29 is placed on heat sink anchor clamps 28 tops, and heat sink anchor clamps 28 usefulness screws connect with the first half (cross section is the part of swallowtail shape) of dovetail groove anchor clamps 27.Because the dovetail groove anchor clamps 27 that used dovetail to work in coordination with dovetail groove are changed detected device 29 easily.Because with sample holder 26 electrical isolations, making, dovetail groove anchor clamps 27 also are electrically insulated from one another between the plural detected device 29.The light-emitting window of each detected device 29 all follows the light center position that is subjected to of a photodetector 30 to align, and photodetector 30 is installed on the rear panel of insulation can 22, and can change according to the long and short wavelength of detected device 29.Plural detected device 29 is realized continuous detecting one by one by a channel converter, and said channel converter adopts analog switch also to design with the mode of triode extend current.The electrode of each detected device 29 is by multiply flat electrode lead-in wire 32, and connection provides drive current I for detected device 29 with the channel converter current output terminal.Among Fig. 3 38 is the contact conductor printed circuit board (PCB), and 39 is heat insulation backing plate, and 40 is the mounting hole of temperature sensor.
Single-chip microcomputer temperature-controlling system 9 of the present invention can be selected integrated temperature sensor for use, be loaded in the mounting hole 40 on the calandria 23 such as AD590, can adopt double integrator pattern number converter, such as MC14433, temperature value is converted into digital quantity sends into single-chip microcomputer, through single-chip microcomputer output control signal, again through photoelectrical coupler, as 4N28, isolate back control bidirectional triode thyristor, give heating rod 24 power supplies with alternating current; Said single-chip microcomputer can adopt the MCS-8751 singlechip chip, passes through R
s232 serial communication interfaces and microcomputer 1 exchange message.Single-chip microcomputer temperature-controlling system 9 can also add the zero-crossing pulse circuit and single-chip microcomputer joins, and the break-make of heating rod 24 electric currents is all finished when zero-crossing of alternating current, avoids the influence of temperature-controlling system to test.
The physical circuit of passage conversion can be referring to Fig. 4.Q wherein is middle power NPN triode, requires penetrating current little, resistance R
1For preventing that the analog switch overload is provided with resistance R
2For the leakage current of avoiding analog switch misleads Q I is set
InAnd I
OutBe the input and output electric current of drive current I concerning switch.Analog switch can adopt 16 to select 1 K switch, because 16 conducting resistance and the Power Limitation of selecting 1 analog switch K do not allow directly to pass through big electric current, and drive current are bigger, so taked the mode of triode extend current.As analog switch K gating X
1The time, input current I
InThrough R
1With analog switch K be NPN triode Q
1Bias current is provided, makes Q
1Conducting, I as can be seen from circuit
Out=I
InAs analog switch k gating X not
1The time, Q
1End output current I
Out=0.So just finished the passage conversion of big electric current.Control to analog switch can be served as by the single-chip microcomputer of single-chip microcomputer temperature-controlling system 9 by control line L.
The electrical schematic diagram of reversal can be referring to Fig. 5.A among Fig. 5, B are two groups of reversal sockets 33, and their ground lead position is just the opposite, promptly are right side lead-in wire ground connection in each adjacent two lead-in wire of A group, and are left side lead-in wire ground connection in each adjacent two lead-in wire of B group; C is the contact conductor plug, electrically connects by multiply flat electrode lead-in wire 32 with detected device 29, and every two adjacent lead-in wires are connected a detected device 29.As shown in Figure 5, when contact conductor plug C inserts reversal socket 33A, the left end electrode grounding of each detected device 29, right-hand member electrode grounding then when inserting reversal socket 33B, thus realized the reversal of detected device 29 easily.Reversal socket 33 is connected with the channel converter current output terminal and is provided drive current I for detected device 29.
Description of drawings
Fig. 1 is the electric derivative curve and the partial parameters of semiconductor laser.
Fig. 2 is a device complete machine structure block diagram of the present invention.
Fig. 3 is that the sales kit (SK) structure of device of the present invention is partly cutd open figure.
Fig. 4 is the channel conversion circuit figure of device of the present invention.
Fig. 5 is the polar switching socket plug schematic diagram of device of the present invention.
Reliability of semiconductor laser determination method of the present invention and device have following spy Point: 1. be that the noise spectra of semiconductor lasers reliability detects the completely new approach of analyzing, to device screening Have harmless, quick, easy characteristics, and can carry out the factor that affects device reliability Analyze. Device of the present invention has Microcomputer, intellectuality, automation characteristics, and not only being can Detection is analyzed data is provided by property, and can test the electric derivative song that existing apparatus can not be finished Line and some device parameters. 2. can be to more than two, namely the detected device of batch passes through many Channel conversion circuit is once finished one by one test and is done mutually; Can pass through the polarity conversion socket, the side Just finish the electrode conversion of detected device. 3. can carry out temperature variation testing, single-chip microcomputer temperature control System can reach detected device Quick uniform is heated, and can avoid test process and result Interference, the reliability height; The control of Chip Microprocessor Temperature is by the host keyboard input, by soft Part is finished, and has saved single-chip microcomputer and has established in addition keyboard and display screen. 4. use forward junction pressure decline method calorimetric Resistance is than additive method is flexible, convenient, speed is fast, accuracy rate is high. 5. at electric derivative curve Hardware is few in the test, and cost is low, can be by microcomputer software to lock-in amplifier before every measurement Calibration once remedies the drift of analogue measurement system, can realize real-time testing, the each measurement Time, start did not need preheating less than two minutes. 6. the use of dovetail groove anchor clamps can make things convenient for quilt The replacing of detection means is conducive to measure batch. 7. overall structure of the present invention is simple, merit Can be more complete, dependable performance, convenient operation. Namely can test component, again can test dies, Can be used for producing, by the test to device parameters, instruct and produce and device is screened.
Claims (9)
1, a kind of reliability of semiconductor laser check and analysis method is characterized in that the semiconductor laser with a kind of structure is carried out parameter testing and carries out fail-safe analysis by following order:
1. measure the electric derivative curve of detected semiconductor laser, i.e. IdP/dI～I curve, wherein I is the drive current of semiconductor laser, dP/dI is the differential of junction voltage to drive current;
2. from electric derivative curve, obtain threshold current I
Th, to threshold current I
ThFront and back two parts curve carries out fitting a straight line, obtains two slopes and intercept, and the intercept of threshold value forward part is mkT/q, and slope is R
S1, the intercept of threshold value rear section is b, slope is R
S2, wherein, m is the knot characteristic parameter, and k is a Boltzmann constant, and T is a probe temperature, and q is an electron charge, b is the b parameter, R
S1, R
S2Be the resistance in series before and after the threshold value; By threshold current I
ThThe maximum value and the minimizing difference of near curve record the full degree of closing of junction voltage at threshold current place, and height h promptly sinks;
3. change probe temperature T, the electric derivative curve by before and after the alternating temperature records Δ b/ Δ T; And Δ I
Th/ Δ T;
4. each parameter of gained is compared with the normal value (normal parameter value) of these parameters of the semiconductor laser of this structure, the q﹠r of detected semiconductor laser is made evaluation; Estimating rule is that the h value is not less than normal parameter value, b, m, Δ b/ Δ T, R
sBe not more than the device that the normal parameter value is a good reliability;
5. said normal parameter value is to detected a collection of device sampling, selects qualified samples with conventional reliability detection and aging method and obtains after tested.
2, according to the described reliability of semiconductor laser check and analysis of claim 1 method, the parameter that it is characterized in that being used to carrying out the reliability check and analysis also includes thermal resistance R
T, luminous power P and drive current relation curve (P-I curve), luminous power are to differential dP/dI of drive current etc.; Said thermal resistance R
TMeasure by the forward voltage drop method, promptly detected device is added the less measuring current of dutycycle and measure forward junction voltage V under this electric current
L, a broad pulse heating current I again superposes
T, record the forward junction voltage V under the measuring current after the thermal equilibrium
HWith heating current I
TUnder tie pressure drop V, can heat electrical power P
T, survey the forward junction voltage V ' under the measuring current under another temperature again
L, can get the temperature coefficient K=(V of the forward voltage drop of device
L-V '
LTemperature difference when)/Δ T, Δ T are twice measurement forward junction voltage gets thermal resistance R at last
T=(VL-V
H)/kP
TSaid luminous power curve and luminous power are to adopt the large tracts of land germanium detector to make luminous power to detect to the differential of drive current, will send into microcomputer with digital form by the analog to digital converter light intensity magnitude and record.
3, according to claim 1 and 2 described reliability of semiconductor laser check and analysis methods, it is characterized in that, said electric derivative curve test is by one of microcomputer software control digital to analog converter output and the corresponding voltage of drive current I that will be added on the detected device, obtaining time dependent drive current I through the voltage-to-current conversion is added on the detected device, with a sinusoidal signal drive current is modulated simultaneously, detect its fundamental component through lock-in amplifier and obtain dV/dI, send into microcomputer through analog to digital converter, software is finished the product with I, and screen is painted IdV/dI～I curve and calculated each parameter.
4, according to claim 1 or 2 described reliability of semiconductor laser check and analysis methods, it is characterized in that, PBC structure In Ga/AsP/InP laser instrument, R
s＜10 Ω, m＜3.5, b＜10mV, Δ b/ Δ T＜O.4mV/k, h＞50mV, R
T＜50 Ω are reliable devices.
5, a kind of reliability of semiconductor laser check and analysis instrument is made up of microcomputer (1), main frame (2), sales kit (SK) (3), and wherein main frame (2) includes data acquisition board (4), voltage-to-current translation circuit (7) and single-chip microcomputer temperature-controlling system (9); Specimen holder, current-voltage conversion circuit (10) are housed, photodetector (30), insulation can (22) and temperature sensor, calandria (23) in the sample device case (3); Said data acquisition board (4) contains digital to analog converter (5) and analog to digital converter (6), be inserted on microcomputer (1) expansion slot, digital to analog converter (5) is electrically connected with voltage-to-current translation circuit (7), by microcomputer (1) software control, the voltage signal that digital to analog converter (5) is exported becomes in time through voltage-to-current translation circuit (7), and the drive current of linear change is added on the detected device (29), said photodetector (30) is with the photocurrent of detected device (29) output, turn to voltage signal through current-voltage conversion circuit (10) and be defeated by analog to digital converter (6), finish test P-I curve and dP/dI～I curve; The junction voltage signal that detected device (29) provides is defeated by analog to digital converter (6), finishes the measurement to thermal resistance RT and volt-ampere characteristic; The present invention is characterised in that, lock-in amplifier (8) and signal source (11) also are housed in main frame (2), the input end of lock-in amplifier (8) is electrically connected with signal source (11) and detected device (29), output terminal is electrically connected with analog to digital converter (6), and the sinusoidal signal of signal source (11) output is defeated by the drive current of detected device (29) by voltage-to-current translation circuit (7) with the current constant mode modulation; Detect fundamental component dV/dI through lock-in amplifier (8), send into microcomputer (1), finish the product of dV/dI and I, obtain electric derivative curve by software through modulus parallel operation (6).
6. according to the described reliability of semiconductor laser check and analysis of claim 5 instrument, the insulation can (22), calandria (23), the specimen holder that it is characterized in that being equipped with in the said sales kit (SK) (3) thermal insulation material place in the insulation can (22), place heating rod (24) in the middle of the calandria (23), constitute the internal heat type structure; Said specimen holder includes sample holder (26), dovetail groove anchor clamps (27) and heat sink anchor clamps (28), sample holder (26) is fixed on above the calandria (23), plural dovetail groove anchor clamps (27) are housed on a sample holder (26) side by side, and each dovetail groove anchor clamps (27) is fixing with sample holder (26) with dormant screw (37) electrical isolation ground; Heat sink anchor clamps (28) are gone up and are placed detected device (29), and heat sink anchor clamps (28) connect with screw the first half with dovetail groove anchor clamps (27); Said photodetector is installed on the rear panel of insulation can (22) more than (30) two, aligned with the light-emitting window of detected device (29) by the light center position; Each detected device (29) is realized continuous detecting one by one by a channel converter, and said channel converter adopts analog switch and uses the triode extend current.
7,, it is characterized in that said single-chip microcomputer temperature-controlling system (9) is to be loaded in the mounting hole (40) on the calandria (23) with integrated temperature sensor according to claim 5 or 6 described reliability of semiconductor laser check and analysis instrument; With double integrator pattern number converter temperature value is transferred to digital quantity and send into single-chip microcomputer, through single-chip microcomputer output control signal; By controlling bidirectional triode thyristor after the photoelectric coupler isolation, give heating rod (24) power supply again with alternating current; Single-chip microcomputer is followed microcomputer (1) exchange message by the Rs232 serial communication interface.
8, according to claim 5 or 6 described reliability of semiconductor laser check and analysis instrument, the electrode that it is characterized in that each detected device (29) electrically connects with reversal plug (C) by multiply flat electrode lead-in wire (32), and every two adjacent lead-in wires connect a detected device (29); Reversal socket (33) have two groups (A, B), their ground lead position is just the opposite, i.e. lead-in wire ground connection in right side in each two adjacent lead-in wire of A group, then left side lead-in wire ground connection in each two adjacent lead-in wire of B group; Reversal socket (33) is connected with the channel converter current output terminal and is provided drive current I for detected device (29).
9, according to the described reliability of semiconductor laser check and analysis of claim 7 instrument, it is characterized in that the single-chip microcomputer in the single-chip microcomputer temperature-controlling system (9) is the MCS.8751 singlechip chip, and the analog switch (K) of channel converter is controlled by control line (L).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95107991 CN1050454C (en) | 1995-08-11 | 1995-08-11 | Detecting and analysing method and apparatus for reliability of semiconductor laser |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95107991 CN1050454C (en) | 1995-08-11 | 1995-08-11 | Detecting and analysing method and apparatus for reliability of semiconductor laser |
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| CN1117136A true CN1117136A (en) | 1996-02-21 |
| CN1050454C CN1050454C (en) | 2000-03-15 |
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ID=5076570
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| CN 95107991 Expired - Fee Related CN1050454C (en) | 1995-08-11 | 1995-08-11 | Detecting and analysing method and apparatus for reliability of semiconductor laser |
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1995
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