CN109164136A - Thermoelectricity transports parameter high pass system for measuring quantity and method - Google Patents
Thermoelectricity transports parameter high pass system for measuring quantity and method Download PDFInfo
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Abstract
The invention discloses a kind of thermoelectricity to transport parameter high pass system for measuring quantity and method, the system includes: three-dimensional platform, with the two axis mobile platform of X-Y for placing sample to be tested, and the Z axis mobile platform of four probe assemblies is installed, four probe assemblies are used to measure the conductivity and Seebeck coefficient in the region to be measured of sample to be tested；Heat reflection measuring device, for pulse laser to be divided into first laser beam and second laser beam with default optical path difference, first laser beam is used to heat the region to be measured of sample to be tested, and second laser beam is used to measure the region thermal conductivity to be measured of sample to be tested；First laser beam is used as the heat source of four probe groups measurement Seebeck coefficient simultaneously.Two axis mobile platform of combined high precision X-Y, the high pass measurement of the thermal conductivity of large scale sample may be implemented, first laser beam can cleverly improve the measurement efficiency of Seebeck coefficient as the heat source of four probe groups measurement Seebeck coefficient, and then can be realized the high pass measurement that the thermoelectricity such as conductivity, Seebeck coefficient and thermal conductivity transport parameter.
Description
Technical field
The present invention relates to field of thermoelectric material technique, and in particular to a kind of thermoelectricity transport parameter high pass system for measuring quantity and
Method.
Background technique
For thermoelectric material large-scale application, the performance of discovery and searching new material, optimization current material is its pass
Where key.And synthesize new material or improve current material performance, using a traditional secondary design, prepare single composition ingredient
Sample, then carry out constituent and structure analysis, characterization and thermoelectricity transport parameter measurement mode it is obviously very time-consuming,
Effort substantially increases R&D cycle and research and development cost.Therefore, the traditional preparation of thermoelectric material, measurement method and technology be
Through the demand for being unable to satisfy its development.
For the demand, first in material preparation, the preparation method based on Combinatorial materials science is the height of current mainstream
The method that flux prepares thermoelectric material can be used in complicated multicomponent system, systematically study the characteristic of thermoelectric material.Base
The sample of conventional method preparation, conventional method preparation have been totally different from sample prepared by the preparation method of Combinatorial materials science
Sample be usually to usually contain unitary system ingredient and single structure in a sample.And the sample based on above method preparation
Product usually have size big, for example, including that thousands of, even more samples, the especially above method make on a substrate
Sample be micro-area composition graded material sample, i.e., ingredient gradation zone is often micron even sub-micron amount in sample
Grade.In view of the large scale sample of the material production of above-mentioned micro-area composition gradual change, in order to improve material property optimization design efficiency, contracting
The period of small screening optimal performance material, the microcell multi-parameter high pass measuring method and technology for needing to be adapted therewith, thus
Constitute the research and development chain of complete thermoelectric new material.It is mainly conductivity, Seebeck coefficient that the thermoelectricity of thermoelectric material, which transports parameter,
And thermal conductivity.They can not only characterize the thermoelectricity transport property of material, and the carrier concentration of energy indirect reaction material internal
With the height of mobility.The thermoelectric figure of merit calculated simultaneously by these three parameters, i.e. ZT value are the evaluation important fingers of pyroelectric material performance
Mark.
However, the measuring device for transporting parameter to thermoelectricity in the prior art is difficult to realize to the big of micro-area composition graded material
Sample sizes high pass measurement, such as the measurement of conductivity and Seebeck coefficient, are normally based on static measurement and measure,
Specifically, large-sized sample to be tested to be cut into the sample of pre-set dimension, using four probe assemblies to the sample of pre-set dimension
It measures.The measurement is measured due to that can only be directed to the sample of pre-set dimension, if sampling above-mentioned measurement method to micro-
The measurement that the rice even material of submicron-scale regional part gradual change carry out conductivity and Seebeck coefficient will lead to measurement efficiency
Lowly, measurement structure error is larger.
Material thermal conductivity measurement method and technology are more, such as: laser shines, infrared emanation, scanning thermomicroscopy etc.
Method.Wherein the laser method of shining has become a kind of International Standards Method of measurement thermal conductivity, needs when however, laser shines, method is measured
It wants sample to have specific geometry, while needing to carry out spray graphite treatment to sample, the survey for micro-area composition graded material
Amount, error are larger.
Therefore the measurement that the thermoelectricity of large scale sample made of the material to micro-area composition gradual change transports parameter is difficult to realize
High pass measurement, it is difficult to constitute the research and development chain of complete thermoelectric new material.
Summary of the invention
The main purpose of the present invention realizes that the thermoelectricity of thermoelectric material transports the high pass measurement of parameter.
For this purpose, thermoelectricity transports according in a first aspect, the present invention provides a kind of thermoelectricity to transport parameter high pass system for measuring quantity
Parameter includes: conductivity, Seebeck coefficient and thermal conductivity, which includes: three-dimensional platform, has the X- for placing sample to be tested
Two axis mobile platform of Y, and the Z axis mobile platform of four probe assemblies is installed, four probe assemblies are for measuring sample to be tested
The conductivity and Seebeck coefficient in region to be measured；Heat reflection measuring device is divided into for receiving pulse laser, and by pulse laser
First laser beam and second laser beam with default optical path difference, first laser beam are used to heat the region to be measured of sample to be tested,
Second laser beam is used to measure the region thermal conductivity to be measured of sample to be tested；First laser beam is used as four probe groups measurement plug shellfish simultaneously
The heat source of gram coefficient.
Optionally, second laser beam is used to measure the heat reflectivity and heat reflectivity change rate in region to be measured.
Optionally, the system further include: synchronization signal trigger device, for reaching sample to be tested surface in second laser beam
When trigger three-dimensional platform, by four probe assemblies be moved to second laser beam irradiation region, with measurement become by regional temperature to be measured
Voltage difference caused by changing.
Optionally, system further include: data acquisition device, poor, heat reflectivity and heat reflectivity become for collection voltages
Rate；Computing device is connect with data acquisition device, for calculating the region to be measured according to the heat reflectivity change rate
Temperature Distribution, and calculate based on default mathematical model the thermal conductivity in the region to be measured；；Computing device is also used to according to calculating
To temperature and voltage difference calculate the Seebeck coefficient in region to be measured.
Optionally, data acquisition device includes: photodetector, for receiving the second laser beam of region reflection to be measured,
For thermoreflectance signals to be converted to electric signal, input computing device；Electrical parameter collector, for collection voltages difference and conductance
Rate, input computing device.
Optionally, sample to be tested includes multiple regions to be measured, passes through the mobile handoff area to be measured of two axis mobile platform of X-Y
Domain.
According to second aspect, the embodiment of the invention provides thermoelectricity to transport parameter high pass measuring method, using above-mentioned
The thermoelectricity of one side any one, which transports parameter high pass system for measuring quantity, to be treated the thermoelectricity of sample and transports parameter and measure, and is surveyed
Amount method includes: the movement of S1. control X-Y two axis mobile platform and Z axis mobile platform, is measured using four probe assemblies to test sample
The conductivity of product；S2. sample to be tested is heated using first laser beam, the thermal conductivity in region is heated using second laser beam detection
Rate, and mobile Z axis mobile platform, make the contact of four probe assemblies be heated region, measure to Seebeck coefficient.
Optionally, sample to be tested includes multiple regions to be measured；Control the shifting of X-Y two axis mobile platform and Z axis mobile platform
Dynamic, the conductivity using four probe assemblies measurement sample to be tested includes: that S11. determines region to be measured in sample to be tested；S12. it controls
Region to be measured is moved to four probe assembly orthographic projection regions by two axis mobile platform of X-Y processed；S13. Z axis mobile platform direction is controlled
Sample to be tested is mobile, makes a region to be measured of four probe assembly contact measured samples, carries out conductance to the region to be measured of contact
Rate measurement；S14. control Z axis mobile platform is far from sample to be tested, and the S11-S13 that repeats the above steps, until completing all to be measured
The conductivity measurement in region.
Optionally, sample to be tested is being heated using first laser beam, the heat in region is heated using second laser beam detection
Conductance, and mobile Z axis mobile platform make the contact of four probe assemblies be heated region, measure to Seebeck coefficient and include:
S21. the region to be measured in sample to be tested is determined；S22 controls two axis mobile platform of X-Y and region to be measured is moved to four probe assemblies
Orthographic projection region；S23. using the incident region to be measured of first laser beam, to heat region to be measured；S24. it is heated in first laser beam
When regional sustained preset duration to be measured, the incident region to be measured of second laser beam, to measure the heat reflectivity and temperature in region to be measured；
S25. at the incident region to be measured of second laser beam, control Z axis mobile platform towards region to be measured, make the contact of four probe assemblies to
Region is surveyed, voltage difference caused by being changed with measurement by regional temperature to be measured；S26. control Z axis mobile platform is far from sample to be tested,
And the S21-S53 that repeats the above steps, until completing the thermal conductivity in all regions to be measured and the measurement of Seebeck coefficient.
Thermoelectricity provided in an embodiment of the present invention transports parameter high pass system for measuring quantity and method, moves using with two axis of X-Y
The measurement of large scale sample may be implemented in the three-dimensional platform of moving platform and Z axis mobile platform, particularly suitable for microcell constituent
The thermoelectricity such as the thermal conductivity of the material of gradual change transport the measurement of parameter.By the movement of two axis mobile platform of X-Y, may be implemented multiple
The measurement in region, heat reflection measuring device, which is based on femtosecond pulse technology, has very high spatial and temporal resolution, dual wavelength femtosecond
Time Measurement Resolution can be promoted three quantity compared to traditional thermocouple temperature measurement method by the ultrafast temperature test technology of laser
Signal-to-noise ratio can be promoted three orders of magnitude compared to the ultrafast temperature test technology of Single wavelength femtosecond laser, can mentioned with high precision by grade
The heat reflection signal of sample is taken, to realize the precise measurement of thermoelectricity spectrum signal after femtosecond laser heating.In combination with high-precision
Two axis mobile platform of X-Y, may be implemented the high pass measurement of the thermal conductivity of large scale sample, first laser beam is as four probe groups
The heat source of measurement Seebeck coefficient can cleverly improve the measurement efficiency of Seebeck coefficient, and then can be realized conductivity, plug
The thermoelectricity such as seebeck coefficient and thermal conductivity transport the high pass measurement of parameter, the heat that this system research material can also be utilized ultrafast
Electric process provides important experimental data for the research and development of thermoelectric material new material, performance optimization.
Detailed description of the invention
The thermoelectricity that Fig. 1 shows the embodiment of the present invention transports the schematic diagram of parameter high pass system for measuring quantity；
Fig. 2 shows the schematic diagrames of the heat reflection measuring device of the embodiment of the present invention；
Another thermoelectricity that Fig. 3 shows the embodiment of the present invention transports the schematic diagram of parameter high pass system for measuring quantity；
Fig. 4 shows the schematic diagram of four probe assemblies of the embodiment of the present invention；
The thermoelectricity that Fig. 5 shows the embodiment of the present invention transports the schematic diagram of parameter high pass measuring method；
Another thermoelectricity that Fig. 6 shows the embodiment of the present invention transports the schematic diagram of parameter high pass measuring method；
Another thermoelectricity that Fig. 7 shows the embodiment of the present invention transports the schematic diagram of parameter high pass measuring method.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a kind of thermoelectricity to transport parameter high pass system for measuring quantity, and it includes: electricity that thermoelectricity, which transports parameter,
Conductance, Seebeck coefficient and thermal conductivity, as shown in figures 1 and 3, the system include: three-dimensional platform 20, have and place to test sample
The two axis mobile platform 21 of X-Y of product 30, and the Z axis mobile platform 22 of four probe assemblies 23 is installed, four probe assemblies 23 are used
Conductivity and Seebeck coefficient in the region to be measured of measurement sample to be tested 30；Heat reflection measuring device 10, for receiving pulse
Laser, and pulse laser is divided into first laser beam 101 and second laser beam 102 with default optical path difference, first laser beam
101 for heating the region to be measured of sample to be tested 30, and second laser beam 102 is used to measure the region thermal conductivity to be measured of sample to be tested 30
Rate.Heat source of the first laser beam 101 as four probe groups measurement Seebeck coefficient.
Using the three-dimensional platform 20 with X-Y two axis mobile platforms 21 and Z axis mobile platform 22, large scale sample may be implemented
The measurement of multiple regions, heat reflection measuring device 10 may be implemented by the movement of two axis mobile platform 21 of X-Y in the measurement of product
There is very high spatial and temporal resolution based on femtosecond pulse technology, the ultrafast temperature test technology of dual wavelength femtosecond laser is compared to biography
Time Measurement Resolution can be promoted three orders of magnitude by the thermocouple temperature measurement method of system, compare the ultrafast temperature of Single wavelength femtosecond laser
Three orders of magnitude can be promoted for signal-to-noise ratio by spending measuring technology, can be with the heat reflection signal of extracted with high accuracy sample, to realize
The precise measurement of thermoelectricity spectrum signal after femtosecond laser heating.In combination with two axis mobile platform 21 of high-precision X-Y, may be implemented big
The high pass measurement of the thermal conductivity of sample sizes.First laser beam 101 can as the heat source of four probe groups measurement Seebeck coefficient
Cleverly to improve the measurement efficiency of Seebeck coefficient, and then it can be realized the heat such as conductivity, Seebeck coefficient and thermal conductivity
The high pass measurement of electronic transport parameter, the thermoelectricity mistake that femtosecond laser thermophysical property measurement system research material can also be utilized ultrafast
Journey provides important experimental data for the research and development of thermoelectric material new material, performance optimization.
Thermoelectricity is described in detail below and transports parameter high pass system for measuring quantity working principle, is heated in first laser beam 101
Behind region to be measured, region to be measured after the incident heating of second laser beam 102 measures region heat reflectivity and heat reflectivity to be measured
Change rate, specifically, the second beam laser beam 102 measurement material hot physical property when, it is necessary first to measured material is demarcated,
Its heat reflectivity is obtained, its heat reflectivity change rate is then measured.The synchronous letter at the incident region to be measured of second laser beam 102
Number trigger device 40 triggers three-dimensional platform 20, and four probe assemblies 23 are moved to the region that second laser beam 102 is irradiated, with measurement
Voltage difference caused by being changed by regional temperature to be measured.Data acquisition device 50, for acquiring heat reflectivity and voltage difference.Calculate dress
60 are set, is connect with data acquisition device 50, for calculating the Temperature Distribution in region to be measured according to heat reflectivity change rate, and is based on
Default mathematical model calculates the thermal conductivity in region to be measured；Computing device 60 is also used to according to the temperature and voltage difference meter being calculated
Calculate the Seebeck coefficient in region to be measured.Specifically, photodetector can be used, second for receiving region reflection to be measured swashs
Light beam 102, for heat reflectivity to be converted to electric signal, input computing device 60；Electrical parameter collector, it is poor for collection voltages
And conductivity, input computing device 60.
Wherein, as shown in Fig. 2, 10 principle of heat reflection measuring device: generating femtosecond laser, femtosecond laser by laser 11
Train of pulse generates the orthogonal two beams laser in polarization direction by polarizing film 12 and polarization spectroscope 13, respectively pumping light and
Detect light, that is, first laser beam and second laser beam.After frequency-doubling crystal 14, frequency doubles second laser beam, and wavelength subtracts
It is half.First laser beam 101 is used to carry out sample PULSE HEATING, and second laser beam is used to obtain the temperature-responsive on sample
Signal.First laser beam enters electrooptic modulator 15, loads a modulated signal.Second laser beam changes light by delay line 16
Journey, to change the delay time between second laser beam and first laser beam.First laser beam and second laser beam using
Cold mirror 17 realizes conllinear optical path, and two-beam is focused on to the same point on 30 surface of sample to be tested by focusing objective len.Then it uses
The second laser beam signal of reflection is changed into electric signal by photodetector 18, will in the basis of signals by lock-in amplifier 19
Signal extraction in required modulating frequency comes out, and finally by 60 calculation processing of computing device, is sometime postponed
Measured temperature on point.Again by changing delay time, obtain that there is subpicosecond temporal resolution under ultrashort pulse heating
Temperature response curve.Sample can be scanned in combination with two axis mobile platform of X-Y, realizes the function of rapid survey thermal conductivity
Energy.
Heat reflection measurement temperature principle is explained below to combine using heat reflection principle based on femtosecond pulse technology
Modulation-phase lock amplifying technology realizes the high pass measurement of temperature, thermal conductivity, and heat reflection method is the reflection based on measurement sample surfaces
The variable quantity relative to temperature change of rate.When light beam is irradiated to material surface or interface, the variation of temperature can cause instead
The variation of light light intensity is penetrated, thus realizes the measurement of sample temperature.
The heat reflectivity of material can be measured directly.For the light of vertical incidence, there is following formula:
Optical constant n and k in formula (1) are the real numbers and positive number obtained by optical measurement.They pass through following formula and multiple Jie
∈=∈ is counted by means of emails or letters1+i∈2It is associated.
Heat reflection technology is exactly to measure the variation of dielectric functions ∈.
The variation delta ∈ as caused by external modulation1With Δ ∈2Effect on heat reflectivity passes through following Solutions of Ordinary Differential Equations
It releases.
And
In formula (4), A=n (n2-3k2- 1), B=k (3n2-k2-1)
In formula (4), factor alpha and β are the functions of photon energy.
In heat reflection, the modulation of temperature leads to the variation of lattice dielectric functions ∈, this variation is by band-gap energy
Caused by variation and the variation of ceofficient of spread Γ, as following formula indicates
It is possible thereby to determine the relationship between heat reflectivity and temperature.If heat reflectivity can be measured, can be obtained by
The temperature in region is surveyed, and then thermal conductivity is obtained by the curve matching of corresponding mathematics model.
The principle of measurement Seebeck coefficient is explained below, the one end in region to be measured is in steady temperature, and the other end is then
It is quickly heated by first laser beam, generates temperature difference T, so that sample both ends is generated potential V, test to obtain by four probe assemblies
The delta data of potential V during temperature difference disappearance, and in conjunction with the temperature data that second laser beam measures, this data is drawn in V-
Δ T linear relationship curve, slope of a curve are the Seebeck coefficient of sample, i.e.,
S=dV/d (Δ T) (6)
The temperature and temperature gradient for controlling sample, can measure the conductivity and Seebeck coefficient of sample under different temperatures.
In the present embodiment, conductivity measurement is measured using the four probe method of standard, specifically, as shown in Figure 4
Four-point probe measurment conductivity, when 4 four probe 1, probe 2, probe 3, probe metal probes are arranged in a straight line, and with a level pressure
Force in tested region, at probe 1,4 liang of probe between by electric current I, then potential difference V is generated between probe 2, probe 3.
Resistivity of material
Probe coefficient
In formula (8): S1、S2、S3Between respectively between probe 1 and probe 2, probe 2 and probe 3, probe 3 and probe 4
Away from.
Voltage V is obtained by measurement, it is possible thereby to calculate resistivity, and then calculates the conductivity of measured material.
Four probe assemblies of Seebeck coefficient, conductivity measurement are integrated into dual wavelength femtosecond pulse heat reflection measurement
In system, constitutes a complete thermoelectric material thermoelectricity and transport parameter measurement system, on the one hand realize and complete heat on one device
Conductance, conductivity and Seebeck coefficient measure target, improve testing efficiency；On the other hand femtosecond laser thermophysical property measurement system is utilized
The ultrafast thermoelectricity process of system research material provides important experimental data for the research and development of thermoelectric material new material, performance optimization.
The embodiment of the invention also provides a kind of thermoelectricity to transport parameter high pass measuring method, using hot in above-described embodiment
The thermoelectricity that electronic transport parameter high pass system for measuring quantity treats sample transports parameter and measures, as shown in figure 5, this method packet
It includes:
S1. the movement for controlling X-Y two axis mobile platform and Z axis mobile platform measures sample to be tested using four probe assemblies
Conductivity.
S2. sample to be tested is heated using first laser beam, the thermal conductivity in region is heated using second laser beam detection, and
Mobile Z axis mobile platform makes the contact of four probe assemblies be heated region, measures to Seebeck coefficient.
Specifically, can first be measured to conductivity, as shown in fig. 6, the method for conductivity measurement may include:
S11. the region to be measured in sample to be tested is determined；
S12. region to be measured is moved to four probe assembly orthographic projection regions by control two axis mobile platform of X-Y.
S13. control Z axis mobile platform is mobile towards sample to be tested, make one of four probe assembly contact measured samples to
Region is surveyed, conductivity measurement is carried out to the region to be measured of contact.
S14. control Z axis mobile platform is far from sample to be tested.
S15. judge whether to complete the measurement of the conductivity in all regions to be measured, if completing the survey in all regions to be measured
Amount, then enter step S2.If not completing the measurement of all areas, return step S11.
In conductivity measurement, a constant current is led to region to be measured, the measurement of voltage is completed, voltage measurement data is inputted
Computing device, such as computer can calculate resistivity, and then calculate the conductivity of tested region.It is specific to calculate original
Reason may refer to the description in above-described embodiment for conductivity measurement principle.
After completing conductivity measurement, temperature, thermal conductivity and Seebeck coefficient can be measured, specifically, can
With measuring process shown in Figure 7:
S21. the region to be measured in sample to be tested is determined.
S22. region to be measured is moved to four probe assembly orthographic projection regions by control two axis mobile platform of X-Y.
S23. using the incident region to be measured of first laser beam, to heat region to be measured.
S24. when first laser beam heats regional sustained preset duration to be measured, the incident region to be measured of second laser beam, with
Measure the heat reflectivity and heat reflectivity change rate in region to be measured；
S25. at the incident region to be measured of second laser beam, Z axis mobile platform is controlled towards region to be measured, makes four probe groups
Part contact measured region, voltage difference caused by being changed with measurement by regional temperature to be measured；
S26. control Z axis mobile platform is far from sample to be tested.
S27. judge whether to complete the thermal conductivity and the measurement of Seebeck coefficient in all regions to be measured, if completing to be needed
The measurement for surveying region, then enter step S28.If not completing the measurement of all areas, return step S21.
S28. terminate to measure.
Region to be measured is heated by first laser beam in thermal conductivity measurement, to be measured region of the second laser beam to heating
It is tested, obtains reflected light, by photodetector, for receiving the second laser beam of region reflection to be measured, being used for will be hot
Reflectivity signals are converted to electric signal, input computing device, such as computer, can calculate thermal conductivity.In first laser beam
After heating region to be measured, using the variation for the voltage difference that probe measurement varies with temperature, and by the delta data of the voltage difference and
Temperature variation data input value calculation apparatus is fitted, and acquires Seebeck coefficient.Specific Computing Principle may refer to above-mentioned
In embodiment for thermal conductivity and Seebeck coefficient measuring principle description.
Four probe assemblies of Seebeck coefficient, conductivity measurement are integrated into dual wavelength femtosecond pulse heat reflection measurement
In system, constitutes a complete thermoelectric material thermoelectricity and transport parameter measurement system, on the one hand realize and complete heat on one device
Conductance, conductivity and Seebeck coefficient measure target, improve measurement efficiency；On the other hand ultrafast using this system research material
Thermoelectricity process provides important experimental data for the research and development of thermoelectric material new material, performance optimization.
Although the embodiments of the invention are described in conjunction with the attached drawings, but those skilled in the art can not depart from this hair
Various modifications and variations can be made in the case where bright spirit and scope, and such modifications and variations are each fallen within by appended claims
Within limited range.
Claims (9)
1. a kind of thermoelectricity transports parameter high pass system for measuring quantity, the thermoelectricity transport parameter include: conductivity, Seebeck coefficient with
And thermal conductivity characterized by comprising
Three-dimensional platform has the two axis mobile platform of X-Y for placing sample to be tested, and is equipped with the Z axis movement of four probe assemblies
Platform, four probe assembly are used to measure the conductivity and Seebeck coefficient in the region to be measured of the sample to be tested；
Heat reflection measuring device, for pulse laser to be divided into first laser beam and second laser beam with default optical path difference,
The first laser beam is used to heat the region to be measured of the sample to be tested, and the second laser beam is described to test sample for measuring
The region thermal conductivity to be measured of product.
The first laser beam is used as the heat source of four probe groups measurement Seebeck coefficient simultaneously.
2. thermoelectricity as described in claim 1 transports parameter high pass system for measuring quantity, which is characterized in that the second laser beam is used
In the heat reflectivity and heat reflectivity change rate that measure the region to be measured.
3. thermoelectricity as claimed in claim 2 transports parameter high pass system for measuring quantity, which is characterized in that further include:
Synchronization signal trigger device is described three-dimensional flat for triggering when the second laser beam reaches the sample to be tested surface
Four probe assembly is moved to the region of the second laser beam irradiation, is become with measurement by the regional temperature to be measured by platform
Voltage difference caused by changing.
4. thermoelectricity as claimed in claim 3 transports parameter high pass system for measuring quantity, which is characterized in that further include:
Data acquisition device, for acquiring the voltage difference, the heat reflectivity and the heat reflectivity change rate；
Computing device is connect with the data acquisition device, for calculating the area to be measured according to the heat reflectivity change rate
The Temperature Distribution in domain, and calculate based on default mathematical model the thermal conductivity in the region to be measured；
The computing device is also used to calculate the Seebeck in the region to be measured according to the temperature and the voltage difference that are calculated
Coefficient.
5. thermoelectricity as claimed in claim 4 transports parameter high pass system for measuring quantity, which is characterized in that the data acquisition device
Include:
Photodetector, for receiving the second laser beam of region reflection to be measured, for the heat reflectivity to be converted to telecommunications
Number, input the computing device；
Electrical parameter collector inputs the computing device for acquiring the voltage difference and the conductivity.
6. the thermoelectricity as described in claim 1-5 any one transports parameter high pass system for measuring quantity, which is characterized in that it is described to
Sample includes multiple regions to be measured, passes through the mobile handoff region to be measured of the two axis mobile platform of X-Y.
7. a kind of thermoelectricity transports parameter high pass measuring method, which is characterized in that using as claimed in any one of claims 1 to 6
Thermoelectricity transport parameter high pass system for measuring quantity and treat the thermoelectricity of sample and transport parameter and measure, the measurement method packet
It includes:
S1. the movement for controlling X-Y two the axis mobile platform and Z axis mobile platform measures sample to be tested using four probe assemblies
Conductivity；
S2. the sample to be tested is heated using first laser beam, the thermal conductivity in region is heated using second laser beam detection, and
Mobile Z axis mobile platform makes to be heated region described in the four probe assemblies contact, measure to Seebeck coefficient.
8. thermoelectricity as claimed in claim 7 transports parameter high pass measuring method, which is characterized in that the sample to be tested includes
Multiple regions to be measured；
The movement of control X-Y two the axis mobile platform and Z axis mobile platform, measures sample to be tested using four probe assemblies
Conductivity include:
S11. the region to be measured in sample to be tested is determined；
S12. the region to be measured is moved to the four probe assemblies orthographic projection region by control two axis mobile platform of X-Y；
S13. it is mobile towards the sample to be tested to control the Z axis mobile platform, makes the four probe assemblies contact measured sample
A region to be measured, conductivity measurement is carried out to the region to be measured of contact；
S14. the Z axis mobile platform is controlled far from the sample to be tested, and the S11-S13 that repeats the above steps, until completing institute
There is the conductivity measurement in region to be measured.
9. thermoelectricity as claimed in claim 7 transports parameter high pass measuring method, which is characterized in that swash described using first
Light beam heats the sample to be tested, and the thermal conductivity in region, and mobile Z axis mobile platform are heated using second laser beam detection,
Make four probe assembly contact described in be heated region, Seebeck coefficient measured include:
S21. the region to be measured in sample to be tested is determined；
S22 controls two axis mobile platform of X-Y and the region to be measured is moved to the four probe assemblies orthographic projection region；
S23. using the incident region to be measured of first laser beam, to heat the region to be measured；
S24. when the first laser beam heats regional sustained preset duration to be measured, the incident area to be measured of second laser beam
Domain, to measure the heat reflectivity and temperature in the region to be measured；
S25. at the incident region to be measured of the second laser beam, the Z axis mobile platform is controlled towards the area to be measured
Domain makes four probe assembly contact the region to be measured, voltage difference caused by being changed with measurement by the regional temperature to be measured；
S26. the Z axis mobile platform is controlled far from the sample to be tested, and the S21-S25 that repeats the above steps, until completing institute
There are the thermal conductivity in region to be measured and the measurement of Seebeck coefficient.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2018109361836 | 2018-08-16 | ||
| CN201810936183 | 2018-08-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109164136A true CN109164136A (en) | 2019-01-08 |
| CN109164136B CN109164136B (en) | 2021-06-29 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111948250A (en) * | 2020-08-13 | 2020-11-17 | 上海大学 | Variable temperature measuring device for high-flux thermoelectric material |
| CN112268860A (en) * | 2020-10-24 | 2021-01-26 | 江苏明盈科技有限公司 | Dual-wavelength femtosecond pumping detection heat reflection system |
| CN112268861A (en) * | 2020-10-24 | 2021-01-26 | 江苏明盈科技有限公司 | Dual-wavelength femtosecond pumping detection heat reflection system |
| CN115436709A (en) * | 2022-09-22 | 2022-12-06 | 厦门大学 | Movable high-temperature conductivity measurement clamp, system and method |
| CN115436710A (en) * | 2022-09-22 | 2022-12-06 | 厦门大学 | High-temperature conductivity measurement clamp, system and method |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5708371A (en) * | 1995-03-16 | 1998-01-13 | Mitsubishi Denki Kabushiki Kaisha | Scanning photoinduced current analyzer capable of detecting photoinduced current in nonbiased specimen |
| CN102297877A (en) * | 2011-05-27 | 2011-12-28 | 上海大学 | Device and method for measuring thermoelectric parameters of film |
| US20120213250A1 (en) * | 2011-02-23 | 2012-08-23 | California Institute Of Technology | Measuring seebeck coefficient |
| CN102914560A (en) * | 2012-10-16 | 2013-02-06 | 上海大学 | Device and method for measuring film thermoelectric performance parameters |
| CN105842276A (en) * | 2016-03-30 | 2016-08-10 | 上海大学 | High-flux thermoelectric performance characterization method based on continuous component block and application thereof |
| CN106569073A (en) * | 2016-11-14 | 2017-04-19 | 中国科学院福建物质结构研究所 | Photo-electro performance test accessory based on thermoelectric performance tester and photo-electro performance test method thereof |
| CN206540818U (en) * | 2016-12-16 | 2017-10-03 | 中国科学院工程热物理研究所 | A kind of thermal conductivity scanning system that heat reflection technology is detected based on pumping |
-
2018
- 2018-08-28 CN CN201810989600.3A patent/CN109164136B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5708371A (en) * | 1995-03-16 | 1998-01-13 | Mitsubishi Denki Kabushiki Kaisha | Scanning photoinduced current analyzer capable of detecting photoinduced current in nonbiased specimen |
| US20120213250A1 (en) * | 2011-02-23 | 2012-08-23 | California Institute Of Technology | Measuring seebeck coefficient |
| CN102297877A (en) * | 2011-05-27 | 2011-12-28 | 上海大学 | Device and method for measuring thermoelectric parameters of film |
| CN102914560A (en) * | 2012-10-16 | 2013-02-06 | 上海大学 | Device and method for measuring film thermoelectric performance parameters |
| CN105842276A (en) * | 2016-03-30 | 2016-08-10 | 上海大学 | High-flux thermoelectric performance characterization method based on continuous component block and application thereof |
| CN106569073A (en) * | 2016-11-14 | 2017-04-19 | 中国科学院福建物质结构研究所 | Photo-electro performance test accessory based on thermoelectric performance tester and photo-electro performance test method thereof |
| CN206540818U (en) * | 2016-12-16 | 2017-10-03 | 中国科学院工程热物理研究所 | A kind of thermal conductivity scanning system that heat reflection technology is detected based on pumping |
Non-Patent Citations (1)
| Title |
|---|
| 刘伟: "硒化锡单晶生长及其热电性能的研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅰ辑》 * |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111948250A (en) * | 2020-08-13 | 2020-11-17 | 上海大学 | Variable temperature measuring device for high-flux thermoelectric material |
| CN111948250B (en) * | 2020-08-13 | 2023-01-13 | 上海大学 | Variable temperature measuring device for high-flux thermoelectric material |
| CN112268860A (en) * | 2020-10-24 | 2021-01-26 | 江苏明盈科技有限公司 | Dual-wavelength femtosecond pumping detection heat reflection system |
| CN112268861A (en) * | 2020-10-24 | 2021-01-26 | 江苏明盈科技有限公司 | Dual-wavelength femtosecond pumping detection heat reflection system |
| CN115436709A (en) * | 2022-09-22 | 2022-12-06 | 厦门大学 | Movable high-temperature conductivity measurement clamp, system and method |
| CN115436710A (en) * | 2022-09-22 | 2022-12-06 | 厦门大学 | High-temperature conductivity measurement clamp, system and method |
| CN115436710B (en) * | 2022-09-22 | 2024-05-14 | 厦门大学 | High-temperature conductivity measurement clamp, system and method |
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