CN102306904A - High-precision semiconductor laser system based on feedforward decoupling control - Google Patents
High-precision semiconductor laser system based on feedforward decoupling control Download PDFInfo
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Abstract
The invention discloses a high-precision semiconductor laser system based on feedforward decoupling control, comprising a DSP (digital signal processor), a temperature sensor, an opto-sensor, an A/D (analog to digital) converter, a D/A (digital to analog) converter, an LD (laser diode) driving circuit and a TEC (thermoelectric cooler) driving circuit. Software is used for setting a power value, the DSP loads the power value to the D/A converter, signals which are subjected to the DAC (digital-to-analogue conversion) are provided for the LD driving circuit, and a semiconductor laser can be operated normally by the signals passing through the LD driving circuit; and LD power signals are fed back to the DSP by the sampling and ADC (analog-to-digital conversion) of the opto-sensor and the A/D converter and then calculated in real time to be fed into the DSP so as to control the output control quantity. The high-precision semiconductor laser system controls parameters of semiconductor lasers such as output power, wavelength and the like stably and accurately, and realizes the reliably automatic protection of the semiconductor laser. The high-precision semiconductor laser system is small in the volume, high in the cost performance and good in the adaptability as well as more accurate, stable and reliable.
Description
Technical field
The present invention relates to a kind of semicondcutor laser unit, relate in particular to a kind of high-accuracy semiconductor laser system based on feedforward decoupling zero control.
Background technology
Semiconductor laser (LD) is owing to have numerous advantages such as volume is little, in light weight, efficient height; At the beginning of being born is the focus of laser field always, is widely used in various fields such as spectral technique, optical heterodyne detection, optical fiber communication, high power solid-state laser pumping, medical treatment, processing.The existing control method of a lot of LD systems has been arranged both at home and abroad, and we have also developed the LD system of digital control, but all seldom relate to the decoupling zero control of temperature and power.In fact there are coupling influence in the temperature of LD and Output optical power, and temperature raises and causes outer molecule efficient to reduce, and Output optical power reduces, and threshold current increases simultaneously, and heat dissipation power raises, and causes temperature to raise, and LD system, coupled model is as shown in Figure 1.Variation of temperature causes the fluctuating of Output optical power; Can influence the serviceability of semiconductor laser; For example: laser radar can produce false target at receiving terminal and cause the false alarm probability of radar to increase; In medical treatment, cause operative failure, in optical communication, can cause distorted signals, in the laser imprinting, can cause operating mistake or the like when reading information.For this reason, people pay very big effort and develop high-accuracy LD system.And temperature-power decoupled control is a kind of effective means of optimizing the semiconductor laser output characteristic, therefore is necessary it is studied.
I among Fig. 1
TEC(s), I
LD(s) be respectively the set-point of TEC and LD electric current; T (s), P (s) is respectively the temperature and the power of controlled volume; C
1(s), C
2(s) be respectively the PID adjuster of temperature and luminous power; G
11(s), G
21(s) be respectively the transfer function of TEC input current to temperature and luminous power; G
12(s), G
22(s) be the transfer function of LD input current respectively to temperature and luminous power.This shows that the coupling of LD temperature and luminous power is through parameter G
21(s), G
12(s) represent.Its coupled relation can be represented with following matrix equation:
Traditional semiconductor laser drive system generally suppresses influencing each other between temperature and power through pure hardware circuit; But because the function action of each link unit is SECO in the circuit; Lack complicated control of multivariables such as temperature, operating current and noise suppressed; Bring a lot of interference therefore can for the semiconductor laser drive system; Influence the serviceability and the life-span of semiconductor laser, this also is to hinder the bottleneck that semiconductor laser is applied development, and therefore resolving this problem seems particularly important.
Summary of the invention
The objective of the invention is to: adopt DSP to realize the Feed-forward Compensation Decoupling of noise spectra of semiconductor lasers; Eliminate the coupling between temperature and power; Improve the temperature and the power control precision of semiconductor laser; Improve the control performance of semiconductor laser, propose a kind of high-accuracy semiconductor laser system based on feedforward decoupling zero control.
High-accuracy semiconductor laser system based on feedforward decoupling zero control provided by the invention is made up of DSP digital signal processor, temperature sensor, optical sensor, A/D converter, D/A converter, LD drive circuit and TEC drive circuit.LD driving power energising back system automatically resets; Through the software set performance number, the DSP digital signal processor is loaded into the input of D/A converter with this numerical value through extending out the DAC pin, offers the LD drive circuit through the signal after the digital-to-analogue conversion; Signal through the LD drive circuit makes the semiconductor laser operate as normal; Thereby obtain required power output, feed back to the ADC pin of DSP after the sampling of LD power signal process optical sensor, A/D converter and the analog-to-digital conversion, send in the DSP digital signal processor after calculating in real time; Then the output controlled quentity controlled variable is controlled, to realize the power control of LD; Through the software set temperature value; DSP produces pulse width modulating signal PWM through the PWM1 pin, behind the TEC drive circuit, makes the semiconductor laser steady operation; Thereby obtain required temperature signal; Adopt the temperature sampling of temperature sensor noise spectra of semiconductor lasers, temperature is inputed to DSP through DSP digital signal processor GPIOA0 end, through algorithm process; Drive the TEC drive circuit works through control output PWM duty ratio, always work near the temperature of setting through TEC and the heat abstractor system that makes.
The present invention has set up temperature-power coupling model of LD, and model is following:
In order to eliminate G
12And G
21Coupling influence, should satisfy:
Wherein:
,
is respectively the set point of TEC and LD electric current;
,
is respectively temperature and the power of controlling object LD;
,
are
respectively to the effect of
,
, and
,
are
respectively to the effect of
,
;
for the Feed-forward Compensation Decoupling Control device of elimination
to the influence of
,
is the Feed-forward Compensation Decoupling Control device of elimination
to the influence of
; Its transfer function is respectively:
The Feed-forward Compensation Decoupling matrix is:
LD drive circuit of the present invention is made up of first operational amplifier, second operational amplifier, first triode, adjustment pipe, first resistance, second resistance and electric capacity, inductance and semiconductor laser; The D/A converter output termination first operational amplifier input; The A/D converter output connects another input of first operational amplifier and second operational amplifier output terminal; The output of first operational amplifier connects first transistor base; First transistor emitter links to each other with adjustment pipe base stage, and the first resistance cross-over connection is between the collector electrode and power supply VCC of first triode, and adjustment is managed and is connected to semiconductor laser after emitter is connected in series the parallel branch of first electric capacity and first inductance; Be connected to ground, another input end grounding of second operational amplifier behind the adjustment pipe emission while second operational amplifier input and second resistance of connecting.
TEC drive circuit of the present invention is made up of optical coupling isolator, the 3rd resistance, first voltage comparator, second voltage comparator, the 3rd to the 6th triode, a N channel enhancement metal-oxide-semiconductor, the 2nd N channel enhancement metal-oxide-semiconductor, the first P-channel enhancement type metal-oxide-semiconductor, the second P-channel enhancement type metal-oxide-semiconductor, second electric capacity, second inductance, three inductance, semiconductor cooler and semiconductor laser; Insert an end of optical coupling isolator from the pwm signal of the PWM1 pin of DSP digital signal processor output; The negative terminal common ground of the anode of the other end of optical coupling isolator and first voltage comparator, second voltage comparator, the negative terminal of the other end and first voltage comparator, the anode of voltage comparator U2B through on draw the 3rd resistance R 3 to connect voltage VCC.Input to the base stage of the complementary symmetry circuit of the 3rd triode and the 4th triode composition from the signal of first voltage comparator output; The collector electrode of the 3rd triode connects voltage (VCC); The grounded collector of the 4th triode; The emitter of the 3rd triode links to each other with the emitter of the 4th triode; The signal of output inserts the G utmost point of a N channel enhancement metal-oxide-semiconductor and the G utmost point of the first P-channel enhancement type metal-oxide-semiconductor respectively, and the S utmost point of a N channel enhancement metal-oxide-semiconductor inserts voltage (VCC), and the D of the first P-channel enhancement type metal-oxide-semiconductor pipe is ground connection extremely directly; The G utmost point of the one N channel enhancement metal-oxide-semiconductor pipe extremely links to each other with the D of the first P-channel enhancement type metal-oxide-semiconductor, and the output signal gets into second inductance; Then input to the base stage of the complementary symmetry circuit of the 5th triode and the 6th triode composition from the signal of second voltage comparator output; The emitter of the 5th triode links to each other with the emitter of the 6th triode; The signal of output inserts the G utmost point of the 2nd N channel enhancement metal-oxide-semiconductor and the G utmost point of the second P-channel enhancement type metal-oxide-semiconductor respectively; The S utmost point of the 2nd N channel enhancement metal-oxide-semiconductor inserts voltage (VCC); The D of the second P-channel enhancement type metal-oxide-semiconductor pipe is ground connection extremely directly, and the G utmost point of the 2nd N channel enhancement metal-oxide-semiconductor extremely links to each other with the D of the second P-channel enhancement type metal-oxide-semiconductor, and the output signal gets into the 3rd inductance; Under the buffer action of signal through second electric capacity of second inductance, the 3rd inductance, get into semiconductor cooler, control the heating and the refrigeration of semiconductor laser.
Advantages such as the present invention adopts feedforward decoupling zero control, and number is few because it has the decoupling zero network, branch road Mathematical Modeling order is low and applied widely; Through the appropriate control algorithm; Combined with hardware circuit and semiconductor refrigerating technology are realized accurate, the stable control to semiconductor laser system temperature, Output optical power, wavelength, simultaneously; Realization is to the more effective automatic protection of laser diode device, thereby prolongs its useful life.
Hardware circuit part has refrigeration usually and heats dual-use function to the LD temperature control component among the present invention, and to adopt the PWM type of drive more energy-conservation than adopting linear power supply and driving, structure is simpler.But there is straight-through phenomenon usually in the circuit bridge that the MOSFET (metal FET) that adopts the PWM type of drive forms; To this phenomenon; This paper compares and enlarges the input pwm signal through amplifier and controls MOSFET bridge drive circuit; Need not the problem that the special delayed circuit just can solve " dead band " of conventional MOS FET bridge circuit, this method is not only simplified circuit and has also been improved circuit reliability.Owing to adopt the PWM type of drive to have stronger noise than Linear Driving, in order to reduce noise, designed isolation and protective circuit, mainly adopt light-coupled isolation and power supply independently to supply with two aspects and set about, design relevant protective circuit simultaneously and optimized drive circuit.
The present invention uses computer control, organically combines software and hardware, and adopts semiconductor refrigerating technology, realizes semiconductor laser power output, isoparametric stable, the accurately control of wavelength; Realized the reliable protection automatically of system's noise spectra of semiconductor lasers simultaneously.This system bulk is little, and the ratio of performance to price is high, and adaptability is good, has remedied the deficiency on traditional pure analog drive system performance, can avoid the improper destruction loss that causes expensive Laser Devices of manual operation.If adopt the more excellent type of performance, can further improve the operating index (like power precision, wavelength resolution, frequency stability etc.) of system, make system accurate more, stable and reliable.
Description of drawings
Fig. 1 is the coupled relation figure of traditional LD system.
Fig. 2 is LD decoupling zero control structure figure of the present invention.
Fig. 3 is the circuit diagram of figure LD drive circuit of the present invention.
Fig. 4 is the circuit diagram of TEC drive circuit of the present invention.
Fig. 5 is a LD Feed-forward Compensation Decoupling Control system block diagram of the present invention.
Fig. 6 is the isoboles of decoupling and controlling system of the present invention.
Fig. 7 is the present invention's decoupling zero control algolithm flow chart that feedovers.
Embodiment
Below in conjunction with embodiment and contrast accompanying drawing the present invention is elaborated.
The present invention is made up of DSP digital signal processor DSP, temperature sensor F1, optical sensor F2, A/D converter, D/A converter, LD drive circuit, TEC drive circuit and semiconductor laser G.
LD driving power energising back system automatically resets; Through the software set performance number; DSP is loaded into the input of D/A converter with this numerical value through extending out the DAC pin; Signal through after the digital-to-analogue conversion offers the LD drive circuit, and the signal of process LD drive circuit makes semiconductor laser G operate as normal, thereby obtains required power output.Feed back to the ADC pin of DSP after the sampling of LD power signal process optical sensor, A/D converter and the analog-to-digital conversion, send among the DSP after calculating in real time, then the output controlled quentity controlled variable is controlled, control with the power of realizing LD.
Through the software set temperature value; DSP produces PWM (pulse width modulating signal) through the PWM1 pin, behind the TEC drive circuit, makes semiconductor laser G steady operation; Thereby obtain required temperature signal; Adopt the temperature sampling of temperature sensor (DS18B20) noise spectra of semiconductor lasers, temperature is inputed to DSP through the GPIOA0 end, through algorithm process; Drive the TEC drive circuit works through control output PWM duty ratio, always work near the temperature of setting through TEC and the heat abstractor system that makes.
The LD drive circuit is as shown in Figure 3, is made up of the first operational amplifier U1A, the second operational amplifier U1B, the first triode T1, adjustment pipe T2, first resistance R 1, second resistance R 2 and capacitor C 1, inductance L 1 and semiconductor laser G.
The D/A converter output termination first operational amplifier U1A input; The A/D converter output connects first another input of operational amplifier U1 and the second operational amplifier U1B output; The output of the first operational amplifier U1A connects the first triode T1 base stage; The first triode T1 emitter links to each other with adjustment pipe T2 base stage; 1 cross-over connection of first resistance R is between the collector electrode and power supply VCC of the first triode T1; Adjustment pipe T2 emitter be connected in series first capacitor C 1 and with the parallel branch of first inductance L 1 after be connected to semiconductor laser G, adjustment pipe T2 emission is connected to ground, another input end grounding of the second operational amplifier U1B after the second operational amplifier U1B input and second resistance R 2 of connecting simultaneously.
The operation principle of LD drive circuit is: by the voltage control signal of DSP output through extend out pin DAC, the signal after D/A converter D/A conversion inputs to the first operational amplifier U1A again; Amplify through the first operational amplifier U1A; Manage the compound adjustment management and control system that T2 (TIP122) forms by the first triode T1 (8050) and adjustment; The emitter of one route adjustment pipe T2 directly flows to semiconductor laser G through the filter circuit of being made up of capacitor C 1 and inductance L 1; Another road obtains voltage signal through excessive power sampling resistor R2, gives differential amplifier U1B with voltage signal, gets at the ADC pin by DSP; The analog-to-digital conversion of control signal is being carried out data processing through DSP with the digital signal that transforms.
Referring to Fig. 4, TEC drive circuit of the present invention is made up of optical coupling isolator B, the 3rd resistance R 3, the first voltage comparator U2A, the second voltage comparator U2B, the 3rd to the 6th triode T3, T4, T5, T6, first, second N channel enhancement metal-oxide-semiconductor Q1, Q3, first, second P-channel enhancement type metal-oxide-semiconductor Q2, Q4, second capacitor C 2, second and third inductance L 2, L3, semiconductor cooler TEC and semiconductor laser G.
Insert the end of optical coupling isolator B from the pwm signal of the PWM1 pin of DSP output; The negative terminal common ground of the anode of the other end of optical coupling isolator and voltage comparator U2A, voltage comparator U2B, the negative terminal of the other end and voltage comparator U2A, the anode of voltage comparator U2B through on draw the 3rd resistance R 3 to connect voltage VCC.Input to the base stage of the complementary symmetry circuit of the 3rd triode T3 and the 4th triode T4 composition from the signal of voltage comparator U2A output; The collector electrode of the 3rd triode T3 meets voltage VCC; The grounded collector of the 4th triode T4; The emitter of the 3rd triode T3 links to each other with the emitter of the 4th triode T4; The signal of output inserts the G utmost point of a N channel enhancement metal-oxide-semiconductor Q1 and the G utmost point of the first P-channel enhancement type metal-oxide-semiconductor Q2 respectively, and the S utmost point of a N channel enhancement metal-oxide-semiconductor Q1 inserts voltage VCC, and the D of first P-channel enhancement type metal-oxide-semiconductor Q2 pipe is ground connection extremely directly; The G utmost point of the one N channel enhancement metal-oxide-semiconductor Q1 extremely links to each other with the D of the first P-channel enhancement type metal-oxide-semiconductor Q2, and the output signal gets into second inductance L 2.Then input to the base stage of the complementary symmetry circuit of the 5th triode T5 and the 6th triode T6 composition from the signal of voltage comparator U2B output; The emitter of the 5th triode T5 links to each other with the emitter of the 6th triode T6; The signal of output inserts the G utmost point of the 2nd N channel enhancement metal-oxide-semiconductor Q3 and the G utmost point of the second P-channel enhancement type metal-oxide-semiconductor Q4 respectively; The S utmost point of the 2nd N channel enhancement metal-oxide-semiconductor Q3 inserts voltage VCC; The D of the second P-channel enhancement type metal-oxide-semiconductor Q4 is ground connection extremely directly, and the G utmost point of the 2nd N channel enhancement metal-oxide-semiconductor Q3 extremely links to each other with the D of the second P-channel enhancement type metal-oxide-semiconductor Q4, and the output signal gets into the 3rd inductance L 3.Through getting into semiconductor cooler TEC under the buffer action of second capacitor C 2, TEC controls heating and the refrigeration of semiconductor laser G from the signal of second inductance L 2, the 3rd inductance L 3.
TEC drive principle of the present invention is:
The PWM1 end output pulse width modulation signal (PWM) of DSP; Signal through after the optical coupling isolator B isolation compares through voltage comparator U2A, U2B; Produce two pwm signals that phase place is opposite through improving; The output signal carries out signal through the complementary symmetry circuit of being made up of respectively triode T3, T4 and T5, T6 and amplifies; The height of signal voltage determines the conducting of MOSFET bridge circuit Q1, Q2, Q3, Q4 and ends, with this heating and refrigeration of controlling TEC, makes the semiconductor laser steady operation.
When input signal is a high level, T3, T5 bear amplification, this moment Q1, Q3 conducting, and Q2, Q4 end, and behind the MOSFET bridge circuit, drive TEC and make its heating; Otherwise when the signal of input was low level, T4, T6 bore amplification, Q2, Q4 conducting at this moment, and Q1, Q3 end, and TEC makes its refrigeration through the rear drive of MOSFET bridge circuit, controls the temperature stabilization of semiconductor laser with this.
In fact feedforward compensation principle of the present invention is exactly the output of the adjuster of a passage to be regarded in the influence of another passage as perturbation action, then, uses the principle of feedfoward control and removes the coupling between control loop.The block diagram of feedforward compensation control system is as shown in Figure 5.
Among Fig. 5
,
is respectively the set point of TEC and LD electric current;
,
is respectively temperature and the power of controlling object LD;
,
are respectively the temperature of LD and the transfer function of power P ID adjuster;
is zero-order holder.
is the transfer function of LD coupled characteristic, wherein
,
be respectively adjuster
to
, the effect passage of
.
,
respectively regulator
on
,
the role of the channel.This shows that the temperature of LD and the coupling of power are expressed through
,
.In order to remove the coupling influence of two branch roads, need one of design by
,
decoupling zero control device
of constituting.Makes the regulator
By decoupling controller
Elimination of
impact.Equally, adjuster
is eliminated the influence to
through decoupling controller
.Through decoupling zero later component system, two component system independently shown in Figure 6 have been become on the ideal.At this moment, two component system have been removed coupling influence fully, and equivalence is two fully independently autonomous systems.
Set up temperature-power coupling model of following LD:
In order to eliminate G
12And G
21Coupling influence, should satisfy:
Feedforward compensation decoupling controller
and
The transfer functions are as follows:
The Feed-forward Compensation Decoupling matrix is:
The Z transfer function of generalized object is:
After obtaining each gating matrix by Fig. 5, just can obtain the corresponding difference equation of decoupling zero matrix according to the Z transfer function of generalized object, just can be by computer realization decoupling zero control, the Z-transformation of parameter in each variable corresponding diagram 5, the algorithm steps of decoupling zero control is following:
(1) calculate the deviation of each regulating loop:
e
1(kT) be the deviation of TEC electric current, e to the adjustment loop
2(kT) be the deviation of LD electric current to the power adjustments loop.
(2) the output u of calculating PID adjuster
1(kT), u
2(kT):
According to deviation e
1(kT), e
2(kT) and regulate rule and calculate u
1(kT), u
2(kT), C wherein
1(kT), C
2(kT) be respectively PID adjuster C among Fig. 5
1(s), C
2(s) Z-transformation that transfer function is corresponding.
(3) obtain computer output variable u
1' (kT), u
2' (kT), D wherein
12(kT), D
21(kT) be respectively decoupling controller D among Fig. 5
1(s), D
2(s) Z-transformation that transfer function is corresponding:
Through the later system of decoupling zero control, can prove control variables u
1(s) to not influence of P (s), control variables u
2(s) to not influence of T (s).Therefore, after the feedforward decoupling zero, two control loops just are independent of each other.Feedforward decoupling zero control algolithm flow process is as shown in Figure 7.
Through test, the main performance index of system of the present invention is following under-10 ℃-50 ℃ ambient temperature:
1) constant-current source output: 0-2 A are adjustable continuously, and power supply load regulation rate is superior to 0.01A
2) laser output power: 0-2 W are adjustable continuously, and stability is superior to 0.01W
3) the laser works temperature is 25 ℃, temperature control precision ± 0.1 ℃
4) because adopt based on the relay protection software control under, start slowly, close slowly, measures such as luminous power is adjusted slowly, high-pressure and overflowing protection, Laser Devices are had reliable automatic protective effect.
Claims (4)
1. the high-accuracy semiconductor laser system based on feedforward decoupling zero control is characterized in that: be made up of DSP digital signal processor, temperature sensor, optical sensor, A/D converter, D/A converter, LD drive circuit and TEC drive circuit; LD driving power energising back system automatically resets; Through the software set performance number, the DSP digital signal processor is loaded into the input of D/A converter with this numerical value through extending out the DAC pin, offers the LD drive circuit through the signal after the digital-to-analogue conversion; Signal through the LD drive circuit makes the semiconductor laser operate as normal; Thereby obtain required power output, feed back to the ADC pin of DSP after the sampling of LD power signal process optical sensor, A/D converter and the analog-to-digital conversion, send in the DSP digital signal processor after calculating in real time; Then the output controlled quentity controlled variable is controlled, to realize the power control of LD; Through the software set temperature value; DSP produces pulse width modulating signal PWM through the PWM1 pin, behind the TEC drive circuit, makes the semiconductor laser steady operation; Thereby obtain required temperature signal; Adopt the temperature sampling of temperature sensor noise spectra of semiconductor lasers, temperature is inputed to DSP through DSP digital signal processor GPIOA0 end, through algorithm process; Drive the TEC drive circuit works through control output PWM duty ratio, always work near the temperature of setting through TEC and the heat abstractor system that makes.
2. the high-accuracy semiconductor laser system based on feedforward decoupling zero control according to claim 1, it is characterized in that: set up temperature-power coupling model of LD, model is following:
In order to eliminate G
12And G
21Coupling influence, should satisfy:
Wherein:
,
is respectively the set point of TEC and LD electric current;
,
is respectively temperature and the power of controlling object LD;
,
are
respectively to the effect of
,
, and
,
are
respectively to the effect of
,
;
for the Feed-forward Compensation Decoupling Control device of elimination
to the influence of
,
is the Feed-forward Compensation Decoupling Control device of elimination
to the influence of
; Its transfer function is respectively:
The Feed-forward Compensation Decoupling matrix is:
3. the high-accuracy semiconductor laser system based on feedforward decoupling zero control according to claim 1 and 2 is characterized in that: the LD drive circuit is made up of first operational amplifier, second operational amplifier, first triode, adjustment pipe, first resistance, second resistance and electric capacity, inductance and semiconductor laser; The D/A converter output termination first operational amplifier input; The A/D converter output connects another input of first operational amplifier and second operational amplifier output terminal; The output of first operational amplifier connects first transistor base; First transistor emitter links to each other with adjustment pipe base stage, and the first resistance cross-over connection is between the collector electrode and power supply VCC of first triode, and adjustment is managed and is connected to semiconductor laser after emitter is connected in series the parallel branch of first electric capacity and first inductance; Be connected to ground, another input end grounding of second operational amplifier behind the adjustment pipe emission while second operational amplifier input and second resistance of connecting.
4. the high-accuracy semiconductor laser system based on feedforward decoupling zero control according to claim 1 and 2, it is characterized in that: the TEC drive circuit is made up of optical coupling isolator, the 3rd resistance, first voltage comparator, second voltage comparator, the 3rd to the 6th triode, a N channel enhancement metal-oxide-semiconductor, the 2nd N channel enhancement metal-oxide-semiconductor, the first P-channel enhancement type metal-oxide-semiconductor, the second P-channel enhancement type metal-oxide-semiconductor, second electric capacity, second inductance, three inductance, semiconductor cooler and semiconductor laser; Insert an end of optical coupling isolator from the pwm signal of the PWM1 pin of DSP digital signal processor output; The negative terminal common ground of the anode of the other end of optical coupling isolator and first voltage comparator, second voltage comparator, the negative terminal of the other end and first voltage comparator, the anode of voltage comparator U2B through on draw the 3rd resistance R 3 to connect voltage (VCC); Input to the base stage of the complementary symmetry circuit of the 3rd triode and the 4th triode composition from the signal of first voltage comparator output; The collector electrode of the 3rd triode connects voltage (VCC); The grounded collector of the 4th triode; The emitter of the 3rd triode links to each other with the emitter of the 4th triode; The signal of output inserts the G utmost point of a N channel enhancement metal-oxide-semiconductor and the G utmost point of the first P-channel enhancement type metal-oxide-semiconductor respectively, and the S utmost point of a N channel enhancement metal-oxide-semiconductor inserts voltage (VCC), and the D of the first P-channel enhancement type metal-oxide-semiconductor pipe is ground connection extremely directly; The G utmost point of the one N channel enhancement metal-oxide-semiconductor pipe extremely links to each other with the D of the first P-channel enhancement type metal-oxide-semiconductor, and the output signal gets into second inductance; Then input to the base stage of the complementary symmetry circuit of the 5th triode and the 6th triode composition from the signal of second voltage comparator output; The emitter of the 5th triode links to each other with the emitter of the 6th triode; The signal of output inserts the G utmost point of the 2nd N channel enhancement metal-oxide-semiconductor and the G utmost point of the second P-channel enhancement type metal-oxide-semiconductor respectively; The S utmost point of the 2nd N channel enhancement metal-oxide-semiconductor inserts voltage (VCC); The D of the second P-channel enhancement type metal-oxide-semiconductor pipe is ground connection extremely directly, and the G utmost point of the 2nd N channel enhancement metal-oxide-semiconductor extremely links to each other with the D of the second P-channel enhancement type metal-oxide-semiconductor, and the output signal gets into the 3rd inductance; Under the buffer action of signal through second electric capacity of second inductance, the 3rd inductance, get into semiconductor cooler, control the heating and the refrigeration of semiconductor laser.
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| CN105388959A (en) * | 2015-11-10 | 2016-03-09 | 上海金盾消防智能科技有限公司 | Circuit and method for controlling power of laser tube on basis of PWM signal |
| CN106410603A (en) * | 2016-06-22 | 2017-02-15 | 无锡市德科立光电子技术有限公司 | Method and device for online regulation of performance parameters of semiconductor optical amplifier |
| CN106840638A (en) * | 2017-01-06 | 2017-06-13 | 北京航空航天大学 | Speed sync for structural testing system loads decoupling method and device |
| CN107703590A (en) * | 2017-09-27 | 2018-02-16 | 青岛海信宽带多媒体技术有限公司 | A kind of optical module and its temprature control method |
| WO2018121061A1 (en) * | 2016-12-30 | 2018-07-05 | 深圳市光峰光电技术有限公司 | Method and device for controlling phase-change refrigeration system with solid-state light-emitting light source, and projection device |
| CN108988122A (en) * | 2018-09-30 | 2018-12-11 | 无锡源清瑞光激光科技有限公司 | A kind of quasi-continuous semiconductor laser control system of QCW suitable for laser spot welding |
| CN111193178A (en) * | 2018-11-14 | 2020-05-22 | 方砾琳 | High-precision laser power regulation and stabilization system |
| CN111934195A (en) * | 2019-07-08 | 2020-11-13 | 安菲腾(常州)光电科技有限公司 | Semiconductor laser drive circuit based on current feedforward active cooling |
| CN112857247A (en) * | 2021-02-19 | 2021-05-28 | 山东英信计算机技术有限公司 | Deformation monitoring method, device, equipment and medium for PCB |
| CN112909713A (en) * | 2021-02-02 | 2021-06-04 | 武汉奇致激光技术股份有限公司 | Gas laser drive voltage control system |
| CN116261238A (en) * | 2023-05-15 | 2023-06-13 | 上海杰茗科技有限公司 | ToF light source driving circuit and electronic equipment |
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| CN103050884A (en) * | 2012-12-28 | 2013-04-17 | 北京航天易联科技发展有限公司 | Driving method of laser tube core semiconductor refrigerator |
| CN104795727A (en) * | 2014-01-16 | 2015-07-22 | 中能激光显示技术（上海）有限公司 | High-power semiconductor laser driving system and driving method thereof |
| CN105045308A (en) * | 2015-08-12 | 2015-11-11 | 北京空间机电研究所 | Semiconductor refrigerator closed-loop control method applied to space environment |
| CN105162453A (en) * | 2015-09-11 | 2015-12-16 | 福建顺昌虹润精密仪器有限公司 | Passive signal isolator |
| CN105162453B (en) * | 2015-09-11 | 2017-11-21 | 福建顺昌虹润精密仪器有限公司 | A kind of passive signal isolator |
| CN105388959A (en) * | 2015-11-10 | 2016-03-09 | 上海金盾消防智能科技有限公司 | Circuit and method for controlling power of laser tube on basis of PWM signal |
| CN105388959B (en) * | 2015-11-10 | 2018-02-16 | 上海金盾消防智能科技有限公司 | One kind is based on pwm signal control laser tube power circuit and method |
| CN106410603A (en) * | 2016-06-22 | 2017-02-15 | 无锡市德科立光电子技术有限公司 | Method and device for online regulation of performance parameters of semiconductor optical amplifier |
| WO2018121061A1 (en) * | 2016-12-30 | 2018-07-05 | 深圳市光峰光电技术有限公司 | Method and device for controlling phase-change refrigeration system with solid-state light-emitting light source, and projection device |
| CN106840638A (en) * | 2017-01-06 | 2017-06-13 | 北京航空航天大学 | Speed sync for structural testing system loads decoupling method and device |
| CN107703590A (en) * | 2017-09-27 | 2018-02-16 | 青岛海信宽带多媒体技术有限公司 | A kind of optical module and its temprature control method |
| CN108988122A (en) * | 2018-09-30 | 2018-12-11 | 无锡源清瑞光激光科技有限公司 | A kind of quasi-continuous semiconductor laser control system of QCW suitable for laser spot welding |
| CN111193178A (en) * | 2018-11-14 | 2020-05-22 | 方砾琳 | High-precision laser power regulation and stabilization system |
| CN111934195A (en) * | 2019-07-08 | 2020-11-13 | 安菲腾(常州)光电科技有限公司 | Semiconductor laser drive circuit based on current feedforward active cooling |
| CN112909713A (en) * | 2021-02-02 | 2021-06-04 | 武汉奇致激光技术股份有限公司 | Gas laser drive voltage control system |
| CN112857247A (en) * | 2021-02-19 | 2021-05-28 | 山东英信计算机技术有限公司 | Deformation monitoring method, device, equipment and medium for PCB |
| CN116261238A (en) * | 2023-05-15 | 2023-06-13 | 上海杰茗科技有限公司 | ToF light source driving circuit and electronic equipment |
| CN116261238B (en) * | 2023-05-15 | 2023-07-21 | 上海杰茗科技有限公司 | ToF light source driving circuit and electronic equipment |
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