CN111679525A - 显示面板及其制作方法 - Google Patents

显示面板及其制作方法 Download PDF

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CN111679525A
CN111679525A CN202010571923.8A CN202010571923A CN111679525A CN 111679525 A CN111679525 A CN 111679525A CN 202010571923 A CN202010571923 A CN 202010571923A CN 111679525 A CN111679525 A CN 111679525A
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metal
layer
display panel
substrate
metal layer
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CN111679525B (zh
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曹志浩
唐维
黄建龙
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US16/966,015 priority patent/US11996415B2/en
Priority to PCT/CN2020/103217 priority patent/WO2021258468A1/zh
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    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
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    • G02F1/136259—Repairing; Defects
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    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136222—Colour filters incorporated in the active matrix substrate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
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    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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Abstract

本申请公开了一种显示面板及其制作方法，所述显示面板包括相对设置的阵列基板以及彩膜基板，所述阵列基板包括：基板以及设置于所述基板上的电晶体阵列层，其中所述电晶体阵列层包括：设置于所述基板上的第一金属层，所述第一金属层包括栅极；设置于所述第一金属层上方的第二金属层，所述第二金属层包括源极、漏极以及金属走线；以及修复部，至少设置于所述金属走线两侧，并与所述金属走线共同组成信号导线；相比于现有技术，本申请改善了由于金属走线蚀刻造成的显示不均，提高了显示面板的良率。

Description

显示面板及其制作方法
技术领域
本申请涉及显示技术领域，尤其涉及一种显示面板及其制作方法。
背景技术
低温多晶硅(low temperature poly-silicon，简称为LTPS)薄膜晶体管液晶显示器有别于传统的非晶硅薄膜晶体管液晶显示器，其电子迁移率可以达到200cm2/V-sec以上，可有效减小薄膜晶体管器件的面积，从而达到提高开口率，并且在增进显示器亮度的同时还可以降低整体的功耗。另外，较高的电子迁移率可以将部分驱动电路集成在玻璃基板上，减少了驱动IC(integrated circuit，集成电路)，还可以大幅提升液晶显示面板的可靠度，从而使得面板的制造成本大幅降低；因此，LTPS薄膜晶体管液晶显示器逐步成为研究的热点。
在制备LTPS显示器时，为了减少信号传输的阻抗，一般在源极和漏极对应的第二金属层中采用Ti-Al-Ti三明治结构制备金属走线，由于位于中间膜层的Al容易发生侧向蚀刻，从而产生缺口，使得金属走线对光线的反射产生混乱，进而使得显示器显示不均。
发明内容
本申请实施例提供一种显示面板及其制作方法，能够解决现有技术中因第二金属层中的部分膜层发生侧向蚀刻，从而影响第二金属层对光线的反射路径，进而使得显示面板显示不均的技术问题。
为解决上述技术问题，本申请实施例提供一种显示面板，所述显示面板包括相对设置的阵列基板以及彩膜基板，所述阵列基板包括：基板以及设置于所述基板上的电晶体阵列层，其中所述电晶体阵列层包括：
设置于所述基板上的第一金属层，所述第一金属层包括栅极；
设置于所述第一金属层上方的第二金属层，所述第二金属层包括源极、漏极以及金属走线；以及
修复部，至少设置于所述金属走线两侧，并与所述金属走线共同组成信号导线。
在本申请的一种实施例中，所述信号导线的截面形状包括梯形。
在本申请的一种实施例中，所述信号导线的两侧皆为平整面。
在本申请的一种实施例中，所述信号导线的截面形状为等腰梯形，且所述等腰梯形的下底角介于20°至80°之间。
在本申请的一种实施例中，所述修复部的材料包括钨。
在本申请的一种实施例中，所述金属走线包括层叠设置的第一金属导通层、第二金属导通层以及第三金属导通层，其中，所述第二金属导通层的侧面相对于所述第一金属导通层以及所述第三金属导通层的侧面内缩形成缺口，且所述修复部至少填充于所述缺口内。
根据本申请的上述目的，提供一种显示面板的制作方法，所述方法包括：
S10、制备第一金属层以及位于所述第一金属层上方的第二金属层于基板上，且所述第一金属层包括栅极，所述第二金属层包括源极、漏极以及金属走线；以及
S20、至少于所述金属走线的两侧制备修复部，所述修复部与所述金属走线共同组成所述信号导线。
在本申请的一种实施例中，所述步骤S10中，对所述第二金属层进行刻蚀处理，以形成所述源极、所述漏极以及所述金属走线，且于所述金属走线的侧面形成缺口。
在本申请的一种实施例中，所述步骤S20中，采用激光辅助气相沉积法制备所述修复部，且所述修复部至少填充于所述缺口内。
在本申请的一种实施例中，所述修复部的材料包括钨。
本申请的有益效果：相比于现有技术，本申请通过在位于第二金属层的金属走线两侧设置修复部，以修复金属走线侧面由于蚀刻形成的形貌缺陷，使得金属走线对光线的反射沿预设路径进行，提高了显示面板的显示均一性，提高了产品良率和产品品质。
附图说明
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。
图1为本申请实施例提供的信号导线结构示意图。
图2为现有的信号导线结构示意图。
图3为本申请实施例提供的阵列基板结构示意图。
图4为本申请实施例提供的显示面板制作方法流程图。
具体实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述。显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
本申请实施例针对现有的显示面板，由于第二金属层中的部分膜层发生侧向蚀刻，从而影响第二金属层对光线的反射路径，进而使得显示面板显示不均的技术问题。
为解决上述技术问题，本申请实施例提供一种显示面板，请参照图1以及图3所示，所述显示面板包括相对设置的阵列基板以及彩膜基板，所述阵列基板包括：基板101以及设置于所述基板101上的电晶体阵列层102，其中所述电晶体阵列层102包括：设置于所述基板101上的第一金属层，所述第一金属层包括栅极103；设置于所述第一金属层上方的第二金属层，所述第二金属层包括源极、漏极以及金属走线1041；以及修复部1042，至少设置于所述金属走线1041两侧，并与所述金属走线1041共同组成信号导线104。
在实施应用过程中，请参照图2所示，由于现有的显示面板，在制备过程中对第二金属层进行蚀刻处理以形成金属走线201，且所述金属走线201的一般结构为Ti-Al-Ti的三明治结构，而中层的Al容易发生侧向蚀刻，进而使得所述金属走线201侧面产生缺口203，当光线照射到所述金属走线201侧面时，其反射路径因所述缺口203而发生混乱，进而使得反射光线无法被彩膜基板上的黑色矩阵202所阻挡，使得显示面板的发生显示不均的现象，而本申请实施例中，通过在金属走线的两侧设置修复部，以修复所述缺口，进而使得光线可沿预设路径进行反射，以被所述黑色矩阵所阻挡，提高了显示面板的显示均一性，提高了产品良率和产品品质。
更具体地，请参照图1以及图3所示，所述显示面板包括相对设置的阵列基板以及彩膜基板(图中并未示出，且本申请实施例仅示出相关结构，其余结构可参照常规技术进行设置)，所述阵列基板包括基板101以及设置于所述基板101上的电晶体阵列层102。
更进一步地，所述电晶体阵列层102包括设置于所述基板101上的缓冲层1021，设置于所述缓冲层1021上的有源层，设置于所述缓冲层1021上并覆盖所述有源层的第一绝缘层1022，设置于所述第一绝缘层1022上的第一金属层，设置于所述第一金属层上并覆盖所述第一金属层的第二绝缘层1023，设置于所述第二绝缘层1023上第二金属层。
在本申请实施例中，所述第一金属层包括栅极103，所述第二金属层包括源极、漏极以及金属走线1041。
所述电晶体阵列层102还包括修复部1042，所述修复部1042至少设置于所述金属走线1041的两侧，并与所述金属走线1041公共组成信号导线104，其中，所述修复部1042的材料包括钨。
在本申请实施例中，所述金属走线1041的侧面内缩形成缺口105，且所述修复部1042至少填充于所述缺口105内，以修复所述金属走线1041上的形貌缺陷，需要说明的是，所述金属走线1041可以包括层叠设置的第一金属导通层、第二金属导通层以及第三金属导通层，其中，所述第二金属导通层的侧面相对于所述第一金属导通层以及所述第三金属导通层的侧面内缩形成所述缺口105，且所述修复部1042至少填充于所述缺口105内，更进一步地，所述第一金属导通层和所述第三金属导通层均可以为钛，所述第二金属导通层可以为铝，但所述金属走线1041的结构以及材料不限于此，对于所述金属走线1041上的任意形貌缺陷，所述修复部1042均可以进行修补，即所述修复部1042可以设置于所述金属走线1041的侧面和/或顶部，以使得最终形成的信号导线104具有良好的反光效果。
所述信号导线104的截面形状包括梯形，且在本申请的一种实施例中，所述信号导线104的截面形状为等腰梯形，其中，所述等腰梯形的下底角介于20°至80°之间，更进一步地，所述等腰梯形的下底角为60°。
在本申请实施例中，所述信号导线104的两侧皆为平整面，以使得所述信号导线104反射的光可以按照预设路径进行，即沿图1中箭头所示的方向进行反射。
需要说明的是，所述显示面板包括彩膜基板，所述彩膜基板朝向所述阵列基板的一侧设置有黑色矩阵106，且所述信号导线104由于设置有所述修复部1042，使得所述信号导线104反射的光线可以被所述黑色矩阵106所遮挡，不会反射至其他区域，进而防止了显示面板出现显示不均的现象。
另外，本申请实施例还提供一种显示面板的制作方法，即可制得上述实施例中所述的显示面板，请参照图1、图3以及图4所示，所述方法包括：
S10、制备第一金属层以及位于所述第一金属层上方的第二金属层于基板101上，且所述第一金属层包括栅极103，所述第二金属层包括源极、漏极以及金属走线1041。
具体地，依次制备缓冲层1021于所述基板101上，制备有源层于所述缓冲层1021上，制备所述第一绝缘层1022于所述缓冲层1021上并覆盖所述有源层，制备第一金属层于所述第一绝缘层1022上，并对所述第一金属层进行图案化处理，以形成所述栅极103，制备第二绝缘层1023于所述第一绝缘层1022上并覆盖所述栅极103，制备第二金属层于所述第二绝缘层1023上，并对所述第二金属层进行图案化处理，即蚀刻处理，以形成源极、漏极以及金属走线1041，且由于蚀刻过程中，所述金属走线1041易发生侧向蚀刻，以在所述金属走线1041的侧面形成缺口105。
S20、至少于所述金属走线1041的两侧制备修复部1042，所述修复部1042与所述金属走线1041共同组成所述信号导线104。
所述第二金属层蚀刻完成后，采用激光辅助气相沉积法制备所述修复部1042，且所述修复部1042至少制备于所述金属走线1041两侧，并填充于所述缺口105内，所述修复部1042与所述金属走线1041共同组成所述信号导线104，以使得所述信号导线104的两侧为平整面。
且所述修复部1042的材料包括钨。
另外，本申请实施例提供的显示面板的制作方法制得的显示面板的结构均与上述实施例中所述的显示面板相同，在此不再赘述，且后续可参照常规制程完成所述阵列基板的制备，以及彩膜基板的制备，以形成所述显示面板，且本申请实施例针对所述第二金属层进行设置，因此，其余制程在此不作详述，且本申请实施例针对信号导线的修补方法亦可用于源极、漏极或其他金属导线，在此不作限定。
综上所述，本申请实施例提供的显示面板及其制作方法，通过在位于第二金属层的金属走线两侧设置修复部，以修复金属走线侧面由于蚀刻形成的形貌缺陷，使得最终形成的信号导线对光线的反射沿预设路径进行，即信号导线反射的光可以被黑色矩阵所遮挡，防止了反射光进入其他区域，提高了显示面板的显示均一性，提高了产品良率和产品品质。
在上述实施例中，对各个实施例的描述都各有侧重，某个实施例中没有详述的部分，可以参见其他实施例的相关描述。
以上对本申请实施例所提供的一种显示面板及其制作方法进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的技术方案及其核心思想；本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本申请各实施例的技术方案的范围。

Claims (10)

1.一种显示面板，所述显示面板包括相对设置的阵列基板以及彩膜基板，其特征在于，所述阵列基板包括：基板以及设置于所述基板上的电晶体阵列层，其中所述电晶体阵列层包括：
设置于所述基板上的第一金属层，所述第一金属层包括栅极；
设置于所述第一金属层上方的第二金属层，所述第二金属层包括源极、漏极以及金属走线；以及
修复部，至少设置于所述金属走线两侧，并与所述金属走线共同组成信号导线。
2.根据权利要求1所述的显示面板，其特征在于，所述信号导线的截面形状包括梯形。
3.根据权利要求2所述的显示面板，其特征在于，所述信号导线的两侧皆为平整面。
4.根据权利要求2所述的显示面板，其特征在于，所述信号导线的截面形状为等腰梯形，且所述等腰梯形的下底角介于20°至80°之间。
5.根据权利要求1所述的显示面板，其特征在于，所述修复部的材料包括钨。
6.根据权利要求1所述的显示面板，其特征在于，所述金属走线包括层叠设置的第一金属导通层、第二金属导通层以及第三金属导通层，其中，所述第二金属导通层的侧面相对于所述第一金属导通层以及所述第三金属导通层的侧面内缩形成缺口，且所述修复部至少填充于所述缺口内。
7.一种显示面板的制作方法，其特征在于，所述方法包括：
S10、制备第一金属层以及位于所述第一金属层上方的第二金属层于基板上，且所述第一金属层包括栅极，所述第二金属层包括源极、漏极以及金属走线；以及
S20、至少于所述金属走线的两侧制备修复部，所述修复部与所述金属走线共同组成所述信号导线。
8.根据权利要求7所述的显示面板的制作方法，其特征在于，所述步骤S10中，对所述第二金属层进行蚀刻处理，以形成所述源极、所述漏极以及所述金属走线，且于所述金属走线的侧面形成缺口。
9.根据权利要求8所述的显示面板的制作方法，其特征在于，所述步骤S20中，采用激光辅助气相沉积法制备所述修复部，且所述修复部至少填充于所述缺口内。
10.根据权利要求7所述的显示面板的制作方法，其特征在于，所述修复部的材料包括钨。
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