CN111668246B - 摄像装置 - Google Patents

摄像装置 Download PDF

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Publication number
CN111668246B
CN111668246B CN202010401447.5A CN202010401447A CN111668246B CN 111668246 B CN111668246 B CN 111668246B CN 202010401447 A CN202010401447 A CN 202010401447A CN 111668246 B CN111668246 B CN 111668246B
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CN
China
Prior art keywords
pixel
color filter
refractive index
film
image pickup
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN202010401447.5A
Other languages
English (en)
Chinese (zh)
Other versions
CN111668246A (zh
Inventor
关勇一
井上俊徳
狭山征博
中元幸香
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to CN202010401447.5A priority Critical patent/CN111668246B/zh
Publication of CN111668246A publication Critical patent/CN111668246A/zh
Application granted granted Critical
Publication of CN111668246B publication Critical patent/CN111668246B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202010401447.5A 2013-12-18 2014-12-11 摄像装置 Expired - Fee Related CN111668246B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010401447.5A CN111668246B (zh) 2013-12-18 2014-12-11 摄像装置

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2013-260785 2013-12-18
JP2013260785 2013-12-18
JP2014067809A JP6115787B2 (ja) 2013-12-18 2014-03-28 固体撮像装置およびその製造方法、並びに電子機器
JP2014-067809 2014-03-28
CN201410766332.0A CN104733482B (zh) 2013-12-18 2014-12-11 固体摄像装置、固体摄像装置制造方法和电子设备
CN202010401447.5A CN111668246B (zh) 2013-12-18 2014-12-11 摄像装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201410766332.0A Division CN104733482B (zh) 2013-12-18 2014-12-11 固体摄像装置、固体摄像装置制造方法和电子设备

Publications (2)

Publication Number Publication Date
CN111668246A CN111668246A (zh) 2020-09-15
CN111668246B true CN111668246B (zh) 2023-09-15

Family

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Family Applications (2)

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CN202010401447.5A Expired - Fee Related CN111668246B (zh) 2013-12-18 2014-12-11 摄像装置
CN201410766332.0A Expired - Fee Related CN104733482B (zh) 2013-12-18 2014-12-11 固体摄像装置、固体摄像装置制造方法和电子设备

Family Applications After (1)

Application Number Title Priority Date Filing Date
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Country Status (3)

Country Link
US (4) US9425230B2 (enExample)
JP (1) JP6115787B2 (enExample)
CN (2) CN111668246B (enExample)

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JP6115787B2 (ja) 2013-12-18 2017-04-19 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
US9673239B1 (en) * 2016-01-15 2017-06-06 Taiwan Semiconductor Manufacturing Company, Ltd. Image sensor device and method
CN108364966B (zh) * 2018-02-06 2021-03-02 德淮半导体有限公司 图像传感器及其形成方法
KR102520487B1 (ko) * 2018-02-21 2023-04-12 에스케이하이닉스 주식회사 이미지 센싱 장치
US10784300B1 (en) * 2019-04-16 2020-09-22 Visera Technologies Company Limited Solid-state imaging devices
CN110211982B (zh) * 2019-06-13 2021-12-07 芯盟科技有限公司 双核对焦图像传感器以及制作方法
KR102825030B1 (ko) 2020-07-20 2025-06-24 삼성전자주식회사 이미지 센서 및 전자 장치
US20220209193A1 (en) * 2020-12-31 2022-06-30 Samsung Display Co., Ltd. Display panel, display device including the same, and method for manufacturing the display panel
KR20220124333A (ko) * 2021-03-03 2022-09-14 삼성전자주식회사 이미지 센서
JP2024051266A (ja) * 2022-09-30 2024-04-11 シャープセミコンダクターイノベーション株式会社 固体撮像装置

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CN101015062A (zh) * 2004-09-09 2007-08-08 松下电器产业株式会社 固态图像传感器
CN101908549A (zh) * 2009-06-02 2010-12-08 索尼公司 固体摄像器件、固体摄像器件制造方法及电子装置
CN105393356A (zh) * 2013-07-25 2016-03-09 索尼公司 固体图像传感器、固体图像传感器制造方法和电子设备

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US7666704B2 (en) * 2005-04-22 2010-02-23 Panasonic Corporation Solid-state image pickup element, method for manufacturing such solid-state image pickup element and optical waveguide forming device
US7638804B2 (en) * 2006-03-20 2009-12-29 Sony Corporation Solid-state imaging device and imaging apparatus
JP4915126B2 (ja) * 2006-04-10 2012-04-11 株式会社ニコン 固体撮像装置、および電子カメラ
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KR20080058549A (ko) * 2006-12-22 2008-06-26 동부일렉트로닉스 주식회사 이미지 센서 및 이미지 센서의 제조 방법
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JP6103301B2 (ja) * 2013-07-03 2017-03-29 ソニー株式会社 固体撮像装置およびその製造方法、並びに電子機器
JP2015032640A (ja) * 2013-07-31 2015-02-16 株式会社東芝 固体撮像装置および固体撮像装置の製造方法
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CN1638136A (zh) * 2003-11-18 2005-07-13 松下电器产业株式会社 光电探测器
CN101015062A (zh) * 2004-09-09 2007-08-08 松下电器产业株式会社 固态图像传感器
CN101908549A (zh) * 2009-06-02 2010-12-08 索尼公司 固体摄像器件、固体摄像器件制造方法及电子装置
CN105393356A (zh) * 2013-07-25 2016-03-09 索尼公司 固体图像传感器、固体图像传感器制造方法和电子设备

Also Published As

Publication number Publication date
CN104733482B (zh) 2020-05-19
US9425230B2 (en) 2016-08-23
US20160276398A1 (en) 2016-09-22
CN111668246A (zh) 2020-09-15
US20230207603A1 (en) 2023-06-29
CN104733482A (zh) 2015-06-24
US20200127036A1 (en) 2020-04-23
US20150171126A1 (en) 2015-06-18
US11605666B2 (en) 2023-03-14
JP2015135936A (ja) 2015-07-27
US10559620B2 (en) 2020-02-11
JP6115787B2 (ja) 2017-04-19

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Granted publication date: 20230915