CN111613694A - 一种多波段氧化镓基紫外光电探测器阵列的制备方法 - Google Patents
一种多波段氧化镓基紫外光电探测器阵列的制备方法 Download PDFInfo
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 229910001195 gallium oxide Inorganic materials 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 18
- 238000004544 sputter deposition Methods 0.000 claims abstract description 51
- 239000007789 gas Substances 0.000 claims abstract description 18
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 17
- 238000000137 annealing Methods 0.000 claims abstract description 13
- 239000012535 impurity Substances 0.000 claims abstract description 13
- 239000004065 semiconductor Substances 0.000 claims abstract description 13
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 229910003437 indium oxide Inorganic materials 0.000 claims description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 5
- 238000005516 engineering process Methods 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 11
- 239000001301 oxygen Substances 0.000 abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 abstract description 11
- 230000001276 controlling effect Effects 0.000 abstract description 6
- 238000002360 preparation method Methods 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 5
- 238000000151 deposition Methods 0.000 abstract description 5
- 238000001228 spectrum Methods 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 17
- 238000001514 detection method Methods 0.000 description 13
- 239000010409 thin film Substances 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- QZQVBEXLDFYHSR-UHFFFAOYSA-N gallium(III) oxide Inorganic materials O=[Ga]O[Ga]=O QZQVBEXLDFYHSR-UHFFFAOYSA-N 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910005543 GaSe Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 238000000089 atomic force micrograph Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- 239000002135 nanosheet Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000000825 ultraviolet detection Methods 0.000 description 1
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Abstract
本发明提供一种多波段氧化镓基紫外光电探测器阵列的制备方法,首先利用磁控溅射在叉指电极上沉积氧化镓薄膜,通过控制溅射功率、气体压强和气体配比等参数或引入半导体杂质,调控氧化镓薄膜的氧空位和杂质缺陷浓度,实现不同波段紫外光响应的氧化镓光电探测器单元的制备。其次,将制备的氧化镓光电探测器单元,置入气氛炉中进行退火处理,实现对氧化镓光电探测器单元紫外截止波长的调整。最后,将不同波段的氧化镓紫外光电探测器单元组装成探测器阵列,各个光电探测器单元在电学上相互独立。本发明制备的氧化镓紫外光电探测器阵列具有光谱选择性强、响应波段范围宽和稳定性高等优点。
Description
技术领域
本发明属于紫外光电探测器的制备领域,具体涉及到一种多波段氧化镓基紫外光电探测器阵列的制备方法。
背景技术
近年来,已有多种宽禁带半导体材料被用于研究紫外光电探测,包括铝镓氮(AlGaN)、氧化镁锌(MgZnO)和氧化镓(Ga2O3)等。其中,氧化镓是直接带隙半导体材料,禁带宽度约为4.3~5.1eV,具有优良的光电性能、稳定性的物理化学性能和较高的机械强度。氧化镓有5种晶相结构,单斜相β-Ga2O3最为稳定,其它晶相均为亚稳态;目前基于β-Ga2O3已成为日盲紫外光电探测研究的热点。2007年,T.Oshima等人利用分子束外延在c面蓝宝石上生长出β-Ga2O3薄膜,首次制备出基于氧化镓欧姆接触的MSM型光电探测器。2014年,Feng W等人通过热氧化二维GaSe纳米片,制备出准二维β-Ga2O3光电探测器,光谱响应最高峰位于254nm。2017年,Wu ZP研究小组通过激光分子束外延,制备出β-Ga2O3/Ga:ZnO异质结探测器,具有优异的光谱选择性。2019年,Li MQ等人利用磁控溅射技术沉积高度择优取向的氧化镓,具有较高的深紫外探测性能。关于β-Ga2O3紫外光电探测,国内外做了大量的研究工作,但利用β-Ga2O3制备宽波段紫外光电探测器,还很少有相关的报道。
发明内容
本发明目的是提供一种多波段氧化镓基紫外光电探测器阵列的制备方法。利用氧化镓因内部缺陷产生截止波长位置的不同,磁控溅射沉积氧化镓光电探测薄膜,通过控制溅射功率、气体压强和气体配比等参数有效改变氧空位浓度以及引入半导体杂质的方法,有效调控氧化镓薄膜截止波长的位置,制备出不同波段响应的氧化镓光电探测器单元,组装成一种氧化镓多波段紫外光电探测器阵列,实现宽波段紫外光的检测。该紫外光电探测器阵列具有光谱选择性强、稳定性高和工艺简单等优势,可以完成宽波段紫外光的检测。
本发明的技术方案是这样实现的:
一种多波段氧化镓基紫外光电探测器阵列的制备方法,首先,利用磁控溅射技术在叉指电极上射频沉积氧化镓薄膜,控制溅射功率、气体压强和气体配比等参数或引入半导体杂质,制备不同波段紫外光响应的氧化镓光电探测器单元;其次,将探测器单元在保护气体中进行退火处理,实现对氧化镓紫外光电探测器单元截止波长的调整;最后,将不同波段的氧化镓基紫外光电探测器单元组装成探测器阵列。
当要求截止波长在200~290nm范围内时,本底压强优于6×10-4Pa,射频溅射功率为60~200W;溅射气压为0.5~3Pa;氧氩比为1:40~6:40;溅射时间1~4h。
当要求截止波长大于380nm时,本底压强优于6×10-4Pa,射频溅射功率为60~200W;溅射气压为0.5~3Pa;氧氩比为0:40;溅射时间1~4h。
当要求截止波长在290~380nm范围内时,本底压强优于6×10-4Pa,射频溅射功率为60~200W;溅射气压为0.5~3Pa;氧氩比为1:40~6:40;溅射时间为1~4h;在沉积过程中,射频掺入半导体杂质,氧化铟或氧化铝,溅射功率为40~100W,溅射时间为5~30min。
在氩气或氮气中进行退火处理,退火温度为450~800℃、时间为1~5h。
本发明的优点如下:
1、本发明通过控制溅射功率、气体压强和气体配比等参数以及引入半导体杂质的方法,可有效调控氧化镓薄膜的内部缺陷,进而改变氧化镓薄膜截止波长的位置,该方法具有工艺简单、成本低廉优点。
2、本发明制备的氧化镓紫外光电探测薄膜具有光谱选择性强、响应波段范围宽和可重复性强等优势。
附图说明
图1是本发明中氧化镓薄膜SEM图像。
图2是本发明中氧化镓薄膜AFM图像。
图3是本发明中氧化镓薄膜XRD图谱。
图4是本发明中不同氧化镓光电探测器单元透过率曲线。
具体实施方式
下面结合附图和实施案例对本发明中多波段氧化镓基紫外光电探测器单元的制备进一步详细说明,但本发明的保护范围不仅限于这些实施案例。
首先,利用磁控溅射技术在叉指电极上射频沉积氧化镓薄膜,通过改变磁控溅射的参数(包括溅射功率、气体压强和气体配比等)改变氧空位浓度和引入半导体杂质的方法,制备不同波段紫外光响应的氧化镓光电探测器单元;其次,将氧化镓光电探测器单元置于保护气体中进行退火处理,进一步调整氧化镓光电探测器单元的截止波长;最后,将不同波段的氧化镓紫外光电探测器单元组装为具有宽波段紫外光检测功能的探测器阵列。
上述不同波段紫外光响应的氧化镓光电探测器单元主要分为:(1)氧空位较多,截止波长大于380nm的光电探测器单元;(2)结晶度较高、缺陷少,截止波长在200~290nm范围的光电探测器单元;(3)杂质缺陷起主导作用,截止波长在290~380nm范围内的光电探测器单元。
上述(1)截止波长大于380nm的光电探测器单元,其制备方法为在清洗干燥的叉指电极上射频磁控溅射氧化镓光电探测薄膜,溅射过程只通入氩气,增加氧空位的浓度;其溅射功率为60~200W,溅射气压为0.5~3Pa,氧氩比为0:40,溅射时间为1~4h。
上述(2)截止波长在200~290nm范围内的光电探测器单元,其制备方法为在清洗干燥的叉指电极上射频磁控溅射氧化镓光电探测薄膜,在溅射过程通入氧气,降低氧空位的浓度;其溅射功率为60~200W,溅射气压为0.5~3Pa,氧氩比为1:40~6:40,溅射时间为1~4h。
上述(3)截止波长在290~380nm范围内的光电探测器单元,其制备方法为在清洗干燥的叉指电极上射频磁控溅射氧化镓光电探测薄膜,在溅射过程引入半导体杂质;其溅射功率为60~200W;溅射气压为0.5~3Pa;氧氩比为1:40~6:40;溅射时间为1~4h;射频掺入半导体杂质,例如氧化铟或氧化铝,溅射功率为40~100W,溅射时间5~30min。
上述制备方法中氧化镓光电探测器单元退火处理,在保护气体中450~800℃退火处理1~3h;保护气体为氩气或氮气。
上述氧化镓紫外光电探测器阵列组装,不同的氧化镓紫外光电探测器单元之间无电学上的连接关系,各半导体光电探测器芯片的阴极电极是相互独立的,阳极电极是独立的。
实施案例1
(1)通过射频磁控溅射在叉指电极上沉积氧化镓薄膜,其中,本地压强低于6×10- 4Pa、磁控溅射功率为200W、溅射气压为1.0pa、氧气流量为0sccm、氩气流量为40sccm、溅射时间为2h。
(2)在氮气氛围450℃退火处理2h,得到氧化镓光电探测器单元1。
实施案例2
(1)通过射频磁控溅射在叉指电极上沉积氧化镓薄膜,其中,本地压强低于6×10- 4Pa、磁控溅射功率为200W、溅射气压为1.0pa、氧气流量为3sccm、氩气流量为40sccm、溅射时间为2h。
(2)在氮气氛围450℃退火处理2h,得到氧化镓光电探测器单元2。
实施案例3
(1)通过射频磁控溅射在叉指电极上沉积氧化镓薄膜,其中,本地压强低于6×10- 4Pa、磁控溅射功率为200W、溅射气压为1.0pa、氧气流量为3sccm、氩气流量为40sccm、溅射时间为2h;
(2)通过射频磁控溅射在氧化镓薄膜中引入氧化铟杂质,其中,本地压强低于6×10-4Pa、氧化铟射频溅射功率为50W、溅射气压为1.0pa、氧气流量为3sccm、氩气流量为40sccm、溅射时间为5min。
(3)在氮气氛围500℃退火处理2h,得到氧化镓光电探测器单元3。
Claims (5)
1.一种多波段氧化镓基紫外光电探测器阵列的制备方法,其特征在于:首先,利用磁控溅射技术在叉指电极上射频沉积氧化镓薄膜,控制溅射功率、气体压强和气体配比等参数或引入半导体杂质,制备不同波段紫外光响应的氧化镓光电探测器单元;其次,将探测器单元在保护气体中进行退火处理,实现对氧化镓紫外光电探测器单元截止波长的调整;最后,将不同波段的氧化镓基紫外光电探测器单元组装成探测器阵列。
2.根据权利要求1所述的一种多波段氧化镓基紫外光电探测器阵列的制备方法,其特征在于,当要求截止波长在200~290nm范围内时,本底压强优于6×10-4Pa,射频溅射功率为60~200W;溅射气压为0.5~3Pa;氧氩比为1:40~6:40;溅射时间1~4h。
3.根据权利要求1所述的一种多波段氧化镓基紫外光电探测器阵列的制备方法,其特征在于,当要求截止波长大于380nm时,本底压强优于6×10-4Pa,射频溅射功率为60~200W;溅射气压为0.5~3Pa;氧氩比为0:40;溅射时间1~4h。
4.根据权利要求1所述的一种多波段氧化镓基紫外光电探测器阵列的制备方法,其特征在于:当要求截止波长在290~380nm范围内时,本底压强优于6×10-4Pa,射频溅射功率为60~200W;溅射气压为0.5~3Pa;氧氩比为1:40~6:40;溅射时间为1~4h;在沉积过程中,射频掺入半导体杂质,氧化铟或氧化铝,溅射功率为40~100W,溅射时间为5~30min。
5.根据权利要求1所述的一种多波段氧化镓基紫外光电探测器阵列的制备方法,其特征在于:在氩气或氮气中进行退火处理,退火温度为450~800℃、时间为1~5h。
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