CN111540792B - 彩色碲化镉发电玻璃及制作方法 - Google Patents
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- 238000010248 power generation Methods 0.000 title claims abstract description 51
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 48
- 239000011521 glass Substances 0.000 title claims abstract description 48
- 238000004519 manufacturing process Methods 0.000 title abstract description 6
- 238000002360 preparation method Methods 0.000 claims abstract description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 50
- 239000000377 silicon dioxide Substances 0.000 claims description 25
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims description 24
- 239000001023 inorganic pigment Substances 0.000 claims description 23
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 13
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 12
- 239000002994 raw material Substances 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 9
- 238000002156 mixing Methods 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 6
- 239000003054 catalyst Substances 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N iron oxide Inorganic materials [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims description 4
- NDLPOXTZKUMGOV-UHFFFAOYSA-N oxo(oxoferriooxy)iron hydrate Chemical compound O.O=[Fe]O[Fe]=O NDLPOXTZKUMGOV-UHFFFAOYSA-N 0.000 claims description 4
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- JZCCFEFSEZPSOG-UHFFFAOYSA-L copper(II) sulfate pentahydrate Chemical compound O.O.O.O.O.[Cu+2].[O-]S([O-])(=O)=O JZCCFEFSEZPSOG-UHFFFAOYSA-L 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 5
- 238000002834 transmittance Methods 0.000 abstract description 5
- 239000000463 material Substances 0.000 abstract description 2
- 239000002313 adhesive film Substances 0.000 description 3
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 230000006978 adaptation Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007062 hydrolysis Effects 0.000 description 2
- 238000006460 hydrolysis reaction Methods 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000004378 air conditioning Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000001038 titanium pigment Substances 0.000 description 1
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Abstract
本发明公开了一种彩色碲化镉发电玻璃及制作方法，该彩色碲化镉发电玻璃包括碲化镉发电玻璃本体，所述碲化镉发电玻璃本体受光面上涂覆有彩色透光减反膜。其透光率高使得发电效率高，并且色彩均匀不易褪色，兼顾了实用性和美观性。同时具有上述步骤的彩色碲化镉发电玻璃制作方法，其操作简单、反应易于控制、制备材料非常均匀。
Description
技术领域
本发明涉及一种彩色碲化镉发电玻璃及制作方法。
背景技术
目前传统的碲化镉发电玻璃在应用于BIPV(BIPV即Building Integrated PV是光伏建筑一体化。PV即Photovoltaic。BIPV技术是将太阳能发电(光伏)产品集成到建筑上的技术。现代化社会中，人们对舒适的建筑环境的追求越来越高，导致建筑采暖和空调的能耗日益增长。在发达国家，建筑用能已占全国总能耗的30％-40％，对经济发展形成了一定的制约作用。)上，颜色主要为黑色。现有技术中虽然有彩色透光组件，但其采用的技术手段为通过彩色的封装胶膜，并配合清除部分膜层，达到透光目的，从而得到彩色的透光组件。在用于幕墙表面时，其效果不明显色彩不均匀，并且会损失20％以上功率，造成产品发电效率降低。
发明内容
有鉴于此，本发明提供一种彩色碲化镉玻璃及制作方法，使得碲化镉玻璃呈现所需颜色并尽量减少反射率。
为解决以上技术问题，本发明的技术方案为：一种彩色碲化镉发电玻璃，包括碲化镉发电玻璃本体，所述碲化镉发电玻璃本体受光面上涂覆有彩色透光减反膜。太阳能电池发电原理主要就是利用半导体的光电效应，但照射到碲化镉发电玻璃本体表面的光不能充分被吸收，而是很大一部分被反射掉。为了最大限度地减少反射损失，可采用在碲化镉发电玻璃本体上镀一层或多层折射率和厚度与其匹配的减反射膜来提高转化效率。减反膜可增加光的透过率，从而提高电池的效率。
作为一种改进，所述彩色透光减反膜成分包括二氧化硅、无机颜料。光照射到平面的碲化镉发电玻璃本体上，其中一部分被反射。在其上覆盖一层透光减反膜层，可大大降低光的反射。另外将无机颜料添加到透光减反膜中，使其呈现不同色彩，替代现有的封装胶膜，一举两得。
作为一种优选，所述无机颜料包括氧化铁、钛白粉、CdO、CdS、CrCl3、CuSO4·5H2O中的一种。根据需求添加。
作为一种改进，所述彩色透光减反膜上涂覆有透明减反膜。透明减反膜不仅能提高透光率减少反射，还能固化彩色透光减反膜并防止其损伤影响色彩。
作为一种改进，所述透明减反膜成分包括二氧化硅。
作为一种优选，所述彩色透光减反膜和透明减反膜的总厚度为140nm±20nm；其中彩色透光减反膜和透明减反膜的厚度均为70nm±10nm。
本发明还提供一种制备彩色碲化镉发电玻璃的方法，包括以下步骤：
A.制备彩色透光减反膜和透明减反膜凝胶；
B.清洁碲化镉发电玻璃本体受光面；
C.将彩色透光减反膜凝胶喷涂在碲化镉发电玻璃本体受光面上；
D.初步加热固化；
E.将透明减反膜凝胶喷涂在固化后的彩色透光减反膜上；
F.高温加热固化；
D.散热。
作为一种改进，所述步骤A中制备彩色透光减反膜凝胶的制备方法如下：将正硅酸乙酯、乙醇、二氧化硅、无机颜料混合，并以氨水或者盐酸为催化剂；制备透明减反膜凝胶的制备方法如下：将正硅酸乙酯、乙醇、二氧化硅混合，并以氨水或者盐酸为催化剂。
作为一种改进，彩色透光减反膜凝胶原料质量配比为正硅酸乙酯18～22％、乙醇45～55％、二氧化硅18～22％、无机颜料9～11％，其中二氧化硅为直径50nm左右球状结构、无机颜料为直径20nm左右球状结构；透明减反膜凝胶原料质量配比为正硅酸乙酯18～22％、乙醇45～55％、二氧化硅28～32％，其中二氧化硅为直径50nm左右球状结构。
作为一种改进，步骤D中初步加热固化在负压环境中进行，其固化温度为115～125℃；步骤F中高温加热固化温度为590～610℃。
本发明的有益之处在于：具有上述结构的彩色碲化镉发电玻璃，其透光率高使得发电效率高，并且色彩均匀不易褪色，兼顾了实用性和美观性。同时具有上述步骤的彩色碲化镉发电玻璃制作方法，其操作简单、反应易于控制、制备材料非常均匀。
附图说明
图1为本发明的结构示意图。
图2为本发明的微观结构示意图。
图中标记：1碲化镉发电玻璃本体、2彩色透光减反膜、3透明减反膜、4二氧化硅、5无机颜料。
具体实施方式
为了使本领域的技术人员更好地理解本发明的技术方案，下面结合具体实施方式对本发明作进一步的详细说明。
如图1、图2所示，本发明包括碲化镉发电玻璃本体1，所述碲化镉发电玻璃本体1受光面上涂覆有彩色透光减反膜2。所述彩色透光减反膜2上涂覆有透明减反膜3。
其中，彩色透光减反膜2成分包括二氧化硅、无机颜料。所述无机颜料包括氧化铁、钛白粉、CdO、CdS、CrCl3、CuSO4·5H2O中的一种。
无机颜料为氧化铁时，碲化镉发电玻璃呈现红色。
无机颜料为钛白粉时，碲化镉发电玻璃呈现白色。
无机颜料为CdS时，碲化镉发电玻璃呈现黄色。
无机颜料为CrCl3时，碲化镉发电玻璃呈现绿色。
无机颜料为CuSO4·5H2O时，碲化镉发电玻璃呈现蓝色。
当然无机颜料种类、颜色繁多，只要能够使得彩色透光减反膜呈现所需要的颜色即可。
而透明减反膜3成分包括二氧化硅。
彩色透光减反膜2和透明减反膜3的总厚度为140nm±20nm；其中彩色透光减反膜和透明减反膜的厚度均为70nm±10nm。
本发明还提供一种制备彩色碲化镉发电玻璃的方法，包括以下步骤。
A.制备彩色透光减反膜2和透明减反膜3凝胶；
彩色透光减反膜2凝胶的制备方法采用溶胶-凝胶法，步骤如下：用正硅酸乙酯(TEOS)和乙醇为原料，并在内部同时混入纳米材料的二氧化硅和纳米级的无机颜料，并利用氨水或盐酸为催化剂，在液相下将这些原料均匀混合，并进行水解、缩合化学反应，在溶液中形成稳定的彩色溶胶。原料的质量配比为正硅酸乙酯18～22％、乙醇45～55％、二氧化硅18～22％、无机颜料9～11％，其中二氧化硅4为直径50nm左右球状结构、无机颜料5为直径20nm左右球状结构。
透明减反膜3凝胶的制备方法采用溶胶-凝胶法，步骤如下：用正硅酸乙酯(TEOS)和乙醇为原料，并在内部同时混入纳米材料的二氧化硅，并利用氨水和盐酸为催化剂，在液相下将这些原料均匀混合，并进行水解、缩合化学反应，在溶液中形成稳定的透明溶胶；原料质量配比为正硅酸乙酯18～22％、乙醇45～55％、二氧化硅28～32％，其中二氧化硅4为直径50nm左右球状结构。
B.清洁碲化镉发电玻璃本体1受光面；现场凝胶喷涂前，先用清洗机对碲化镉发电玻璃本体1受光面清洁，清除碲化镉发电玻璃本体1表面的油污和杂质。
C.利用喷涂设备将彩色透光减反膜2凝胶喷涂在碲化镉发电玻璃本体1受光面上。
D.初步加热固化；在负压环境下，用115～125℃的温度初步加热，使透光减反膜表面干燥、脱水、致密化，合成均匀致密的薄膜。
E.利用喷涂设备将透明减反膜3凝胶喷涂在固化后的彩色透光减反膜2上；使其完全覆盖住彩色透光减反膜层3。
F.高温加热固化；用600℃高温加热固化，使两层膜层表面干燥、脱水、致密化，合成均匀致密的薄膜。
D.散热，通过降温获得成品。
现有的彩色封装胶膜，必须清除掉部分发电膜层，使彩色从清除掉的空隙内渗透出来，首先要清除掉至少20％的膜层，也就是至少损失20％的效率，而且颜色不均匀。
而本发明中的彩色碲化镉发电玻璃，损失的透光率在0％到15％可调，损失功率小，颜色更加均匀。
以上仅是本发明的优选实施方式，应当指出的是，上述优选实施方式不应视为对本发明的限制，本发明的保护范围应当以权利要求所限定的范围为准。对于本技术领域的普通技术人员来说，在不脱离本发明的精神和范围内，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。
Claims (9)
1.一种制备彩色碲化镉发电玻璃的方法，其特征在于包括以下步骤：
A.制备彩色透光减反膜和透明减反膜凝胶；制备彩色透光减反膜凝胶的制备方法如下：将正硅酸乙酯、乙醇、二氧化硅、无机颜料混合，并以氨水或者盐酸为催化剂；制备透明减反膜凝胶的制备方法如下：将正硅酸乙酯、乙醇、二氧化硅混合，并以氨水或者盐酸为催化剂；
B.清洁碲化镉发电玻璃本体受光面；
C.将彩色透光减反膜凝胶喷涂在碲化镉发电玻璃本体受光面上；
D.初步加热固化；
E.将透明减反膜凝胶喷涂在固化后的彩色透光减反膜上；
F.高温加热固化；
D.散热。
2.根据权利要求1所述的一种制备彩色碲化镉发电玻璃的方法，其特征在于：彩色透光减反膜凝胶原料质量配比为正硅酸乙酯18～22％、乙醇45～55％、二氧化硅18～22％、无机颜料9～11％，其中二氧化硅为直径50nm球状结构、无机颜料为直径20nm球状结构；透明减反膜凝胶原料质量配比为正硅酸乙酯18～22％、乙醇45～55％、二氧化硅28～32％，其中二氧化硅为直径50nm球状结构。
3.根据权利要求1所述的一种制备彩色碲化镉发电玻璃的方法，其特征在于：步骤D中初步加热固化在负压环境中进行，其固化温度为115～125℃；步骤F中高温加热固化温度为590～610℃。
4.一种彩色碲化镉发电玻璃，由权利要求1~3中任意一项所述的制备彩色碲化镉发电玻璃的方法制备；包括碲化镉发电玻璃本体，其特征在于：所述碲化镉发电玻璃本体受光面上涂覆有彩色透光减反膜。
5.根据权利要求4所述的一种彩色碲化镉发电玻璃，其特征在于：所述彩色透光减反膜成分包括二氧化硅、无机颜料。
6.根据权利要求5所述的一种彩色碲化镉发电玻璃，其特征在于：所述无机颜料包括氧化铁、钛白粉、CdO、CdS、CrCl3、CuSO4·5H2O中的一种。
7.根据权利要求4所述的一种彩色碲化镉发电玻璃，其特征在于：所述彩色透光减反膜上涂覆有透明减反膜。
8.根据权利要求7所述的一种彩色碲化镉发电玻璃，其特征在于：所述透明减反膜成分包括二氧化硅。
9.根据权利要求7所述的一种彩色碲化镉发电玻璃，其特征在于：所述彩色透光减反膜和透明减反膜的总厚度为140nm±20nm；其中彩色透光减反膜和透明减反膜的厚度均为
70nm±10nm。
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