CN103681932B - 一种碲化镉薄膜太阳能电池及其制作方法 - Google Patents
一种碲化镉薄膜太阳能电池及其制作方法 Download PDFInfo
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- CN103681932B CN103681932B CN201310651339.3A CN201310651339A CN103681932B CN 103681932 B CN103681932 B CN 103681932B CN 201310651339 A CN201310651339 A CN 201310651339A CN 103681932 B CN103681932 B CN 103681932B
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- cadmium
- solar battery
- telluride
- cadmium telluride
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 title claims abstract description 83
- 238000002360 preparation method Methods 0.000 title abstract description 17
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims abstract description 40
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims abstract description 39
- 230000008033 biological extinction Effects 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 24
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 19
- 210000001142 back Anatomy 0.000 claims abstract description 19
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 19
- 239000010439 graphite Substances 0.000 claims abstract description 19
- 239000002245 particle Substances 0.000 claims abstract description 18
- 238000005507 spraying Methods 0.000 claims abstract description 11
- 238000001035 drying Methods 0.000 claims abstract description 7
- 238000001771 vacuum deposition Methods 0.000 claims abstract description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 claims description 42
- 239000004810 polytetrafluoroethylene Substances 0.000 claims description 42
- -1 polytetrafluoroethylene Polymers 0.000 claims description 21
- 239000003651 drinking water Substances 0.000 claims description 17
- 235000020188 drinking water Nutrition 0.000 claims description 17
- 239000000203 mixture Substances 0.000 claims description 17
- 239000010409 thin film Substances 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 9
- 229910052793 cadmium Inorganic materials 0.000 claims description 7
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 238000007796 conventional method Methods 0.000 claims description 5
- 230000035622 drinking Effects 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 5
- 239000003292 glue Substances 0.000 claims description 5
- 230000031700 light absorption Effects 0.000 claims description 5
- 238000007747 plating Methods 0.000 claims description 5
- 239000004836 Glue Stick Substances 0.000 claims description 4
- 235000000177 Indigofera tinctoria Nutrition 0.000 claims description 3
- 229940097275 indigo Drugs 0.000 claims description 3
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 claims description 3
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 9
- 238000005516 engineering process Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 229910004613 CdTe Inorganic materials 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- 239000005315 stained glass Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910001370 Se alloy Inorganic materials 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 230000004083 survival effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/073—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising only AIIBVI compound semiconductors, e.g. CdS/CdTe solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1836—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising a growth substrate not being an AIIBVI compound
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/543—Solar cells from Group II-VI materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201310651339.3A CN103681932B (zh) | 2013-12-06 | 2013-12-06 | 一种碲化镉薄膜太阳能电池及其制作方法 |
Applications Claiming Priority (1)
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CN201310651339.3A CN103681932B (zh) | 2013-12-06 | 2013-12-06 | 一种碲化镉薄膜太阳能电池及其制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN103681932A CN103681932A (zh) | 2014-03-26 |
CN103681932B true CN103681932B (zh) | 2016-06-15 |
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CN201310651339.3A Expired - Fee Related CN103681932B (zh) | 2013-12-06 | 2013-12-06 | 一种碲化镉薄膜太阳能电池及其制作方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN108538951A (zh) * | 2017-03-03 | 2018-09-14 | 无锡马丁格林光伏科技有限公司 | 一种双面热光伏电池结构 |
CN108493264A (zh) * | 2018-04-17 | 2018-09-04 | 成都中建材光电材料有限公司 | 一种彩色碲化镉薄膜太阳能电池及其制备方法 |
CN111540792B (zh) * | 2020-05-09 | 2023-05-23 | 成都中建材光电材料有限公司 | 彩色碲化镉发电玻璃及制作方法 |
CN113429128A (zh) * | 2021-04-29 | 2021-09-24 | 容科培 | 一种公路专用柔性多色单体发电玻璃的加工工艺 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101276848A (zh) * | 2007-03-29 | 2008-10-01 | Tdk株式会社 | 光电转换电极及其制造方法和色素增感型太阳能电池 |
CN101697361A (zh) * | 2009-10-29 | 2010-04-21 | 润峰电力有限公司 | 一种碲化镉薄膜太阳能电池及其制备方法 |
CN101807622A (zh) * | 2009-02-12 | 2010-08-18 | 四川尚德太阳能电力有限公司 | 一种制备碲化镉薄膜太阳电池组件的方法 |
CN101931031A (zh) * | 2010-07-22 | 2010-12-29 | 西交利物浦大学 | 碲化镉薄膜太阳电池的制造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011044382A1 (en) * | 2009-10-07 | 2011-04-14 | Reel Solar Incorporated | Porous substrates for fabrication of thin film solar cells |
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2013
- 2013-12-06 CN CN201310651339.3A patent/CN103681932B/zh not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101276848A (zh) * | 2007-03-29 | 2008-10-01 | Tdk株式会社 | 光电转换电极及其制造方法和色素增感型太阳能电池 |
CN101807622A (zh) * | 2009-02-12 | 2010-08-18 | 四川尚德太阳能电力有限公司 | 一种制备碲化镉薄膜太阳电池组件的方法 |
CN101697361A (zh) * | 2009-10-29 | 2010-04-21 | 润峰电力有限公司 | 一种碲化镉薄膜太阳能电池及其制备方法 |
CN101931031A (zh) * | 2010-07-22 | 2010-12-29 | 西交利物浦大学 | 碲化镉薄膜太阳电池的制造方法 |
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Effective date of registration: 20171108 Address after: 536000 the Guangxi Zhuang Autonomous Region Beihai Industrial Park Beihai Avenue East Extension Line No. 368 CLP Beihai Industrial Park A01 building 3rd floor West 11B Patentee after: GUANGXI ZHONGXING ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 536000 the Guangxi Zhuang Autonomous Region Beihai city science and Technology Park, South Building Patentee before: BEIHAI HI-TECH WEALTH ELECTRONICS PRODUCTS Co.,Ltd. |
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