CN111517669A

CN111517669A - High-transmittance low-reflection steel three-silver low-emissivity glass and preparation method thereof

Info

Publication number: CN111517669A
Application number: CN202010519785.9A
Authority: CN
Inventors: 赵习军; 唐晶; 余华骏; 武瑞军; 梁干
Original assignee: CSG Holding Co Ltd; Wujiang CSG East China Architectural Glass Co Ltd
Current assignee: CSG Holding Co Ltd; Wujiang CSG East China Architectural Glass Co Ltd
Priority date: 2020-06-09
Filing date: 2020-06-09
Publication date: 2020-08-11

Abstract

The invention discloses high-transmittance low-reflection steel three-silver low-radiation glass and a preparation method thereof, wherein the high-transmittance low-reflection steel three-silver low-radiation glass comprises a glass substrate and a composite film layer plated on the glass substrate, the composite film layer consists of a first dielectric layer, a first AZO layer, a first functional layer, a second AZO layer, a second dielectric layer, a third AZO layer, a second functional layer, a fourth AZO layer, a third dielectric layer, a fifth AZO layer, a third functional layer, a sixth AZO layer, a fourth dielectric layer and an outermost protective layer which are sequentially arranged on the glass substrate, and the first dielectric layer and the fourth dielectric layer are SiN_xThe second dielectric layer and the third dielectric layer are ZnO_xAnd the first functional layer, the second functional layer and the third functional layer are Ag layers. The glass product prepared by the invention has the advantages of low reflectivity, high transmittance, low radiation, good mechanical property and the like.

Description

High-transmittance low-reflection steel three-silver low-emissivity glass and preparation method thereof

Technical Field

The invention relates to the technical field of manufacturing of tempered three-silver low-emissivity glass, in particular to high-transmittance low-reflection tempered three-silver low-emissivity glass and a preparation method thereof.

Background

With the advancement of technology and the increase of economic level, glass becomes an indispensable component in the building and automobile industries, and has a lot of important functions, such as: beautify buildings, meet the requirements of automobile appearance and lighting, bring a wide visual field to the interior, and the like. However, the solar transmittance of ordinary glass is high, the infrared reflectance is low, and most of solar energy and radiation energy can be transmitted through the glass, so that the heat insulation performance is poor. The Low-Emissivity (Low-E) film has a high reflection effect on solar energy, so that the heat transfer coefficient of the Low-E glass is greatly reduced, and the heat insulation performance of the glass is effectively improved.

However, the existing LOW-E glass has a plurality of defects due to the unreasonable structural design of a film system: the visible light transmittance is low; the transmitted color is heavier; the reflectivity is higher; the machinability is poor.

Disclosure of Invention

The invention aims to provide high-transmittance low-reflection tempered three-silver low-emissivity glass and a preparation method thereof, and aims to solve the problems of low visible light transmittance, heavy transmission color, high reflectivity, poor machining performance and the like of the conventional low-emissivity glass.

The embodiment of the invention provides high-transmittance low-reflection steel three-silver low-radiation glass which comprises a glass substrate and a composite film layer plated on the glass substrate, wherein the composite film layer consists of a first dielectric layer, a first AZO layer, a first functional layer, a second AZO layer, a second dielectric layer, a third AZO layer, a second functional layer, a fourth AZO layer, a third dielectric layer, a fifth AZO layer, a third functional layer, a sixth AZO layer, a fourth dielectric layer and an outermost protective layer which are sequentially arranged on the glass substrate, and the first dielectric layer and the fourth dielectric layer are SiN_xThe second dielectric layer and the third dielectric layer are ZnO_xAnd the first functional layer, the second functional layer and the third functional layer are Ag layers.

Further, the outermost protective layer is a SiC layer.

Further, the thickness of the SiC layer is 5-8 nm.

Furthermore, the thickness of the first dielectric layer is 20-30 nm, and the thickness of the fourth dielectric layer is 20-45 nm.

Furthermore, the thickness of the second dielectric layer is 57-67 nm, and the thickness of the third dielectric layer is 65-75 nm.

Furthermore, the thickness of the first functional layer is 5-9 nm, the thickness of the second functional layer is 8-13 nm, and the thickness of the third functional layer is 10-15 nm.

Furthermore, the thicknesses of the first AZO layer, the second AZO layer, the third AZO layer, the fourth AZO layer, the fifth AZO layer and the sixth AZO layer are all 1-5 nm.

Furthermore, the refractive index ranges of the first dielectric layer and the fourth dielectric layer are both 1.74-1.98.

Furthermore, the refractive index ranges of the second medium layer and the third medium layer are both 1.9-2.

The embodiment of the invention also provides a preparation method of the high-transmittance low-reflection tempered three-silver low-emissivity glass, which comprises the following steps:

plating a first dielectric layer on the top surface of the glass substrate, wherein the first dielectric layer is SiN_xA layer;

plating a first AZO layer on the top surface of the first dielectric layer;

plating a first functional layer on the top surface of the first AZO layer, wherein the first functional layer is an Ag layer;

plating a second AZO layer on the top surface of the first functional layer;

plating a second dielectric layer on the top surface of the second AZO layer, wherein the second dielectric layer is ZnO_xA layer;

plating a third AZO layer on the top surface of the second dielectric layer;

plating a second functional layer on the top surface of the third AZO layer, wherein the second functional layer is an Ag layer;

plating a fourth AZO layer on the top surface of the second functional layer;

plating a third dielectric layer on the top surface of the fourth AZO layer, wherein the third dielectric layer is ZnO_xA layer;

plating a fifth AZO layer on the top surface of the third dielectric layer;

plating a third functional layer on the top surface of the fifth AZO layer, wherein the third functional layer is an Ag layer;

plating a sixth AZO layer on the top surface of the third functional layer;

plating a fourth dielectric layer on the top surface of the sixth AZO layer, wherein the fourth dielectric layer is SiN_xA layer;

and plating an outermost protective layer on the top surface of the fourth dielectric layer to finally obtain the high-transmittance low-reflection tempered three-silver low-emissivity glass.

The embodiment of the invention provides high-transmittance low-reflection tempered three-silver low-radiation glass and a preparation method thereof, wherein the high-transmittance low-reflection tempered three-silver low-radiation glass comprises a glass substrate and a composite film layer plated on the glass substrate, the composite film layer consists of a first dielectric layer, a first AZO layer, a first functional layer, a second AZO layer, a second dielectric layer, a third AZO layer, a second functional layer, a fourth AZO layer, a third dielectric layer, a fifth AZO layer, a third functional layer, a sixth AZO layer, a fourth dielectric layer and an outermost protective layer which are sequentially arranged on the glass substrate, and the first dielectric layer and the fourth dielectric layer are SiN_xThe second dielectric layer and the third dielectric layer are ZnO_xAnd the first functional layer, the second functional layer and the third functional layer are Ag layers. The embodiment of the invention optimizes and improves the film system structure by adopting SiN_xThe AZO layer is used as a protective dielectric layer, the Ag layer is used as a core functional layer of the Low-E glass, and the ZnO layer is used as a first dielectric layer and a fourth dielectric layer_xAs the seed layer, the prepared glass product has the advantages of low reflectivity, high transmittance, low radiation, good mechanical property and the like.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

FIG. 1 is a schematic structural diagram of a high-transmittance low-reflection tempered three-silver low-emissivity glass provided by an embodiment of the invention;

fig. 2 is a schematic flow chart of a method for preparing high-transmittance low-reflection tempered three-silver low-emissivity glass provided by an embodiment of the invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It will be understood that the terms "comprises" and/or "comprising," when used in this specification and the appended claims, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.

It is also to be understood that the terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in the specification of the present invention and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

It should be further understood that the term "and/or" as used in this specification and the appended claims refers to and includes any and all possible combinations of one or more of the associated listed items.

Referring to fig. 1, an embodiment of the invention provides a high-transmittance low-reflection tempered three-silver low-emissivity glass, which includes a glass substrate 101 and a composite film layer plated on the glass substrate 101, where the glass substrate 101 is made of a glass materialThe composite film layer is composed of a first dielectric layer 102, a first AZO layer 103, a first functional layer 104, a second AZO layer 105, a second dielectric layer 106, a third AZO layer 107, a second functional layer 108, a fourth AZO layer 109, a third dielectric layer 110, a fifth AZO layer 111, a third functional layer 112, a sixth AZO layer 113, a fourth dielectric layer 114 and an outermost protective layer 115 which are sequentially arranged on a glass substrate 101, wherein the first dielectric layer 102 and the fourth dielectric layer 114 are made of SiN_xThe second dielectric layer 106 and the third dielectric layer 110 are ZnO_xThe first functional layer 104, the second functional layer 108, and the third functional layer 112 are Ag layers.

In the film system structure of the glass provided by the embodiment of the invention, SiN_xAs the first dielectric layer 102 functioning as a base film, SiN_xAs the fourth dielectric layer 114 functioning as a top film, SiN is used_xThe material can improve the hardness of the film layer, prevent sodium ions in the glass substrate from diffusing into the film system to damage the Ag layer during high-temperature tempering, so that the whole film system has better heat resistance and better machining performance under a high-temperature condition, and the phenomenon that the three-silver LOW-E glass film layer is softer is improved. Further, the thickness of the first dielectric layer 102 is 20 to 30nm, and the thickness of the fourth dielectric layer 114 is 20 to 45 nm. The glass can be further improved in the machining performance and the heat resistance by adopting the thickness. Furthermore, the refractive index ranges of the first dielectric layer 102 and the fourth dielectric layer 114 are both 1.74-1.98, and in the range, the finally prepared glass product has good machining performance and heat resistance.

The first AZO layer 103, the second AZO layer 105, the third AZO layer 107, the fourth AZO layer 109, the fifth AZO layer 111 and the sixth AZO layer 113 are made of AZO materials (Al is doped in a ZnO system to obtain ZnO: Al), the AZO layers are used as protective dielectric layers, the AZO layers have a good oxygen isolation effect, can well protect functional layer silver elements, and meanwhile can be more beneficial to surface color control of the three-silver LOW-E glass by controlling the thickness of the AZO layers, so that the surface color cast problem is avoided. In the embodiment of the invention, the thicknesses of the first AZO layer 103, the second AZO layer 105, the third AZO layer 107, the fourth AZO layer 109, the fifth AZO layer 111 and the sixth AZO layer 113 are preferably all 1-5 nm, so that the surface color can be better controlled.

The first functional layer 104, the second functional layer 108 and the third functional layer 112 are made of Ag materials, the three functional layers are used as core functional layers of the three-silver LOW-E glass, the effects of environmental protection and energy conservation are achieved, and the metal Ag provides LOW radiance. Preferably, the thicknesses of the first functional layer 104, the second functional layer 108 and the third functional layer 112 are gradually increased, for example, the thickness of the first functional layer 104 is 5 to 9nm, the thickness of the second functional layer 108 is 8 to 13nm, and the thickness of the third functional layer 112 is 10 to 15nm, so that the emissivity can be further improved.

The second dielectric layer 106 and the third dielectric layer 110 both adopt ZnO_xThe materials, the second dielectric layer 106 and the third dielectric layer 110, can be used as seed layers to improve the flatness of the film layer and provide a better growth platform for the functional layer, and if the functional layer is deposited on other dielectric film layer materials, the quality of the obtained functional layer will be poor, which will result in the performance degradation of the low-radiation glass. At the same time ZnO_xThe extinction coefficient K value is the lowest, ZnO is added into the dielectric layer_xThe transmittance of the film layer can be relatively improved, and the visible light reflectivity can be reduced. Furthermore, the thickness of the second dielectric layer 106 is 57-67 nm, and the thickness of the third dielectric layer 110 is 65-75 nm, so that the functional layer can grow better and the quality of the functional layer can be improved. Furthermore, the refractive index ranges of the second dielectric layer 106 and the third dielectric layer 110 are both 1.9-2, and in the ranges, the finally prepared glass product can be ensured to have the effects of low radiation, low reflectivity and high transmittance.

The outermost protection layer 115 is a SiC layer, that is, a SiC material is used. The fourth dielectric layer 114 (SiN)_x) And the outermost protective layer 115(SiC) as the top dielectric protective material, since these two materials have superior physical properties and chemical resistance. The plated film has strong corrosion resistance, mechanical scratch resistance and high temperature resistance, thereby improving the subsequent processing performance and the service life of the glass product. Preferably, the thickness of the SiC layer is 5-8 nm, so that the performance of the product is further improved.

As shown in fig. 2, an embodiment of the present invention further provides a method for preparing a high-transmittance low-reflection steel-containing three-silver low-emissivity glass, which includes steps S101 to S114:

s101, plating a first dielectric layer on the top surface of the glass substrate, wherein the first dielectric layer is SiN_xA layer;

s102, plating a first AZO layer on the top surface of the first dielectric layer;

s103, plating a first functional layer on the top surface of the first AZO layer, wherein the first functional layer is an Ag layer;

s104, plating a second AZO layer on the top surface of the first functional layer;

s105, plating a second dielectric layer on the top surface of the second AZO layer, wherein the second dielectric layer is ZnO_xA layer;

s106, plating a third AZO layer on the top surface of the second dielectric layer;

s107, plating a second functional layer on the top surface of the third AZO layer, wherein the second functional layer is an Ag layer;

s108, plating a fourth AZO layer on the top surface of the second functional layer;

s109, plating a third dielectric layer on the top surface of the fourth AZO layer, wherein the third dielectric layer is ZnO_xA layer;

s110, plating a fifth AZO layer on the top surface of the third dielectric layer;

s111, plating a third functional layer on the top surface of the fifth AZO layer, wherein the third functional layer is an Ag layer;

s112, plating a sixth AZO layer on the top surface of the third functional layer;

s113, plating a fourth dielectric layer on the top surface of the sixth AZO layer, wherein the fourth dielectric layer is SiN_xA layer;

and S114, plating an outermost protective layer on the top surface of the fourth dielectric layer, and finally obtaining the high-transmittance low-reflection steel three-silver low-emissivity glass.

In each step, the plating is performed by a magnetron sputtering process.

Further, the magnetron sputtering process comprises the following steps:

vacuumizing the coating chamber to the originalBottom vacuum of 5 × 10^-4Below Pa, filling process gas, then switching on a sputtering power supply, starting sputtering the target material, and depositing target material atoms or compounds thereof on the surface of the glass when the glass passes through the target material.

The process gas is different for different steps, for example, the process gas may be one of argon, nitrogen, and oxygen.

In addition, the glass enters the vacuum chamber after being cleaned by the cleaning machine, and target atoms or compounds thereof can be deposited on the surface of the glass when passing through the target.

Aiming at the step S101, an alternating current medium-frequency power supply, argon gas as process gas and nitrogen gas as reaction gas are adopted during plating, an SiAl target with the purity of 99.9% is sputtered, and Si: the Al content is 90:10 wt%.

Aiming at the step S102, an alternating current medium frequency power supply and argon are adopted as process gases during plating, an oxide ceramic aluminum-doped zinc oxide target is sputtered, and ZnO in the target material is Al₂O₃Is 98:2 wt%.

In step S103, a dc power supply and argon gas are used as process gases to sputter Ag.

Aiming at the step S104, an alternating current intermediate frequency power supply and argon are adopted as process gases during plating, an oxide ceramic aluminum-doped zinc oxide target is sputtered, and ZnO in the target material is Al₂O₃Is 98:2 wt%.

Aiming at the step S105, an alternating current medium-frequency power supply, argon gas as process gas and oxygen gas as reaction gas are adopted during plating, a ZnAl target with the purity of 99.9 percent is sputtered, and the content of Zn in the ZnAl target is as follows: al is 98:2 wt%.

Aiming at the step S106, an alternating current intermediate frequency power supply and argon are adopted as process gases during plating, an oxide ceramic aluminum-doped zinc oxide target is sputtered, and ZnO in the target material is Al₂O₃Is 98:2 wt%.

In step S107, a dc power supply and argon gas are used as process gases to sputter Ag.

Aiming at the step S108, an alternating current medium frequency power supply and argon are adopted as process gases during plating, an oxide ceramic aluminum-doped zinc oxide target is sputtered, and ZnO in the target material is Al₂O₃Is 98 in number:2wt％。

Aiming at the step S109, an alternating current medium frequency power supply, argon gas as process gas and oxygen gas as reaction gas are adopted during plating, a ZnAl target with the purity of 99.9 percent is sputtered, and the content of Zn in the ZnAl target is as follows: al is 98:2 wt%.

Aiming at the step S110, an alternating current medium frequency power supply and argon are adopted as process gases during plating, an oxide ceramic aluminum-doped zinc oxide target is sputtered, and ZnO in the target material is Al₂O₃Is 98:2 wt%.

And aiming at the step S111, sputtering metal Ag by using a direct current power supply and argon as process gases during plating.

Aiming at the step S112, an alternating current intermediate frequency power supply and argon are adopted as process gases during plating, an oxide ceramic aluminum-doped zinc oxide target is sputtered, and ZnO in the target material is Al₂O₃Is 98:2 wt%.

Aiming at the step S113, an alternating current medium-frequency power supply, argon gas as process gas and nitrogen gas as reaction gas are adopted during plating, an SiAl target with the purity of 99.9% is sputtered, and Si: the Al content is 90:10 wt%.

Aiming at the step S114, an alternating current medium-frequency power supply and argon are adopted as process gases during plating, a ceramic SiC target with the purity of 99.9% is sputtered, and Si: c is 70:30 wt%; and finally obtaining the high-transmittance low-reflection steel three-silver low-emissivity glass.

Reference is made to the description of the preceding embodiments with regard to the thickness and other aspects of the respective film layers.

The specific embodiment is as follows:

the following film layers were sequentially plated on a 6mm thick glass substrate (white glass) according to the above method: first dielectric layer (SiN)_x25.5nm), a first AZO layer (AZO 2nm), a first functional layer (Ag 7.3nm), a second AZO layer (AZO 2nm), a second dielectric layer (ZnO)_x62.2nm), a third AZO layer (AZO 2nm), a second functional layer (Ag 10.6nm), a fourth AZO layer (AZO 2nm), and a third dielectric layer (ZnO)_x70.3nm), a fifth AZO layer (AZO 2nm), a third functional layer (Ag 12.76nm), a sixth AZO layer (AZO 2nm), and a fourth dielectric layer (SiN)_x30.3nm) and an outermost protective layer (SiC 6.8nm), and the obtained high-transmittance low-reflection three-silver low-emissivity glass is tempered before temperingThe color of (A) is shown in Table 1, and the color after tempering is shown in Table 2. In table 1, "glass surface before tempering" refers to a surface of the prepared low-emissivity glass that is not coated before tempering, "membrane surface before tempering" refers to a surface of the prepared low-emissivity glass that is coated before tempering, "transmission before tempering" refers to a visible light transmittance (color is transmitted, for example, a colorless or white object is seen through the coated glass, the object will appear color) of the prepared low-emissivity glass before tempering, and "side surface before tempering" refers to a side surface of the prepared low-emissivity glass before tempering. Where R denotes the visible light reflectance and g is the abbreviation for glass, here glass, for example: r% g refers to the visible reflectance of the glass side, f is an abbreviation for film, here the film side, for example: r% f refers to the visible light reflectance of the film surface, T refers to the visible light transmittance, c refers to the side surface, for example: r% c refers to the visible light reflectivity of the side face, L is the metric lightness and the size is between 0 and 100; and a, b, axis is yellow-blue axis, and positive is yellow and negative is blue. Correspondingly, the data in table 2 are all the test data after tempering.

TABLE 1

Toughened glass surface	R％g	L*g	a*g	b*g
					6.77	31.28	-2.38	-6.37
Film surface before tempering	R％f	L*f	a*f	b*f
					5.04	26.84	-2.03	-9.14
Penetration before tempering	T	L*t	a*t	b*t
					73.54	88.71	-4.87	0.42
Toughened front side	R％c	L*c	a*c	b*c
					11.28	40.05	-0.16	-5.9

TABLE 2

Toughened glass surface	R％g	L*g	a*g	b*g
					5.64	28.5	0.6	-3.67
Film surface after tempering	R％f	L*f	a*f	b*f
					5.37	27.77	-3.13	-1.25
After tempering, permeate through	T	L*t	a*t	b*t
					84.07	93.48	-2.16	2.13
Tempered back side	R％c	L*c	a*c	b*c
					14.29	44.64	-1.85	-5.35

The emissivity of the single piece of low emissivity glass prior to tempering is 0.035; after tempering, the emissivity of the single piece of low emissivity glass is 0.032.

According to GB9656-2003, the toughened film layer is wiped without demoulding, and an impact experiment, an irradiation resistance experiment, a damp-heat cycle experiment and the like can meet the requirements. The detection result shows that the knocking experiment grade is 4.

The low-emissivity glass prepared by the embodiment has greatly improved sunlight performance, and can reduce the reflectivity to a low value, namely the heat transfer coefficient to a low value; and it can reduce solar energy and keep high visible light transmission, so the low radiation glass has good selectivity in sunlight property.

The low-emissivity glass prepared by the embodiment of the invention has high visible light transmittance, and the visible light transmittance of a single piece of glass with the thickness of 6mm after tempering can reach 82%; the low-emissivity glass prepared by the embodiment of the invention has relatively neutral transmission color, is fresh and natural, and avoids the phenomenon that the transmission color is greenish; the low-emissivity glass prepared by the embodiment of the invention has lower visible light reflectivity, the visible light reflectivity of a single piece of toughened 6mm glass is lower than 6%, and the light pollution to the environment is small; the low-emissivity glass prepared by the embodiment of the invention has high film hardness and good heat resistance at high temperature.

The embodiments are described in a progressive manner in the specification, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.

It is further noted that, in the present specification, relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

Claims

1. A kind ofThe high-transmittance low-reflection steel three-silver low-radiation glass is characterized by comprising a glass substrate and a composite film layer plated on the glass substrate, wherein the composite film layer consists of a first dielectric layer, a first AZO layer, a first functional layer, a second AZO layer, a second dielectric layer, a third AZO layer, a second functional layer, a fourth AZO layer, a third dielectric layer, a fifth AZO layer, a third functional layer, a sixth AZO layer, a fourth dielectric layer and an outermost protective layer which are sequentially arranged on the glass substrate, and the first dielectric layer and the fourth dielectric layer are SiN_xThe second dielectric layer and the third dielectric layer are ZnO_xAnd the first functional layer, the second functional layer and the third functional layer are Ag layers.

2. The high-transmittance low-reflection three-silver low-emissivity glass according to claim 1, wherein the outermost protective layer is a SiC layer.

3. The high-transmittance low-reflection three-silver low-emissivity glass according to claim 2, wherein the thickness of the SiC layer is 5-8 nm.

4. The high-transmittance low-reflection three-silver low-emissivity glass according to claim 1, wherein the thickness of the first dielectric layer is 20-30 nm, and the thickness of the fourth dielectric layer is 20-45 nm.

5. The high-transmittance low-reflection three-silver low-emissivity glass according to claim 1, wherein the thickness of the second dielectric layer is 57-67 nm, and the thickness of the third dielectric layer is 65-75 nm.

6. The high-transmittance low-reflection three-silver low-emissivity glass according to claim 1, wherein the thickness of the first functional layer is 5-9 nm, the thickness of the second functional layer is 8-13 nm, and the thickness of the third functional layer is 10-15 nm.

7. The high-transmittance low-reflectivity steel-type three-silver low-emissivity glass according to claim 1, wherein the thicknesses of the first AZO layer, the second AZO layer, the third AZO layer, the fourth AZO layer, the fifth AZO layer and the sixth AZO layer are all 1-5 nm.

8. The high-transmittance low-reflectivity three-silver low-emissivity glass according to claim 1, wherein the refractive index of each of the first dielectric layer and the fourth dielectric layer is in a range of 1.74-1.98.

9. The high-transmittance low-reflectivity steel-type tri-silver low-emissivity glass according to claim 1, wherein the refractive index of the second dielectric layer and the refractive index of the third dielectric layer are both in the range of 1.9-2.