CN111511870B - 氧化硅膜用研磨液组合物 - Google Patents

氧化硅膜用研磨液组合物 Download PDF

Info

Publication number
CN111511870B
CN111511870B CN201880083779.4A CN201880083779A CN111511870B CN 111511870 B CN111511870 B CN 111511870B CN 201880083779 A CN201880083779 A CN 201880083779A CN 111511870 B CN111511870 B CN 111511870B
Authority
CN
China
Prior art keywords
polishing
silicon oxide
oxide film
polymer compound
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880083779.4A
Other languages
English (en)
Chinese (zh)
Other versions
CN111511870A (zh
Inventor
内田洋平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kao Corp
Original Assignee
Kao Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kao Corp filed Critical Kao Corp
Publication of CN111511870A publication Critical patent/CN111511870A/zh
Application granted granted Critical
Publication of CN111511870B publication Critical patent/CN111511870B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201880083779.4A 2017-12-28 2018-12-21 氧化硅膜用研磨液组合物 Active CN111511870B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2017-253993 2017-12-28
JP2017253993A JP6837958B2 (ja) 2017-12-28 2017-12-28 酸化珪素膜用研磨液組成物
PCT/JP2018/047344 WO2019131545A1 (ja) 2017-12-28 2018-12-21 酸化珪素膜用研磨液組成物

Publications (2)

Publication Number Publication Date
CN111511870A CN111511870A (zh) 2020-08-07
CN111511870B true CN111511870B (zh) 2022-05-06

Family

ID=67066422

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880083779.4A Active CN111511870B (zh) 2017-12-28 2018-12-21 氧化硅膜用研磨液组合物

Country Status (7)

Country Link
US (1) US11795346B2 (https=)
JP (2) JP6837958B2 (https=)
KR (1) KR102701367B1 (https=)
CN (1) CN111511870B (https=)
SG (1) SG11202005634VA (https=)
TW (1) TWI810232B (https=)
WO (1) WO2019131545A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7252073B2 (ja) * 2019-06-26 2023-04-04 花王株式会社 酸化珪素膜用研磨液組成物
JP7550771B2 (ja) * 2019-09-10 2024-09-13 株式会社フジミインコーポレーテッド 研磨用組成物
JP7464432B2 (ja) * 2019-11-13 2024-04-09 花王株式会社 半導体デバイス用基板に用いる洗浄剤組成物
CN113496868B (zh) * 2020-04-03 2023-03-10 重庆超硅半导体有限公司 一种硅片的抛光后清洗方法
JP7425660B2 (ja) * 2020-04-07 2024-01-31 花王株式会社 酸化珪素膜用研磨液組成物
WO2022102019A1 (ja) * 2020-11-11 2022-05-19 昭和電工マテリアルズ株式会社 研磨液及び研磨方法
CN116507688A (zh) * 2020-11-27 2023-07-28 花王株式会社 氧化硅膜用研磨液组合物

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007103485A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp 研磨方法及びそれに用いる研磨液
CN101375376A (zh) * 2006-01-31 2009-02-25 日立化成工业株式会社 绝缘膜研磨用cmp研磨剂、研磨方法、通过该研磨方法研磨的半导体电子部件
CN101437912A (zh) * 2006-03-20 2009-05-20 卡伯特微电子公司 氧化稳定的化学机械抛光组合物及方法
JP2009260236A (ja) * 2008-03-18 2009-11-05 Hitachi Chem Co Ltd 研磨剤、これを用いた基板の研磨方法並びにこの研磨方法に用いる溶液及びスラリー
JP2010272733A (ja) * 2009-05-22 2010-12-02 Hitachi Chem Co Ltd 研磨剤及びこの研磨剤を用いた基板の研磨方法
CN102585765A (zh) * 2004-07-23 2012-07-18 日立化成工业株式会社 Cmp研磨剂以及衬底的研磨方法
JP2016127268A (ja) * 2014-12-26 2016-07-11 花王株式会社 シリコンウェーハ用研磨液組成物、又はシリコンウェーハ用研磨液組成物キット
JP2017190381A (ja) * 2016-04-12 2017-10-19 花王株式会社 表面処理剤

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000109810A (ja) 1998-10-08 2000-04-18 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び基板の研磨方法
JP2003158101A (ja) 2001-11-20 2003-05-30 Hitachi Chem Co Ltd Ｃｍｐ研磨剤及び製造方法
JP2004297035A (ja) 2003-03-13 2004-10-21 Hitachi Chem Co Ltd 研磨剤、研磨方法及び電子部品の製造方法
US7435356B2 (en) 2004-11-24 2008-10-14 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Abrasive-free chemical mechanical polishing compositions and methods relating thereto
WO2007146680A1 (en) * 2006-06-06 2007-12-21 Florida State University Research Foundation , Inc. Stabilized silica colloid
US20090215266A1 (en) 2008-02-22 2009-08-27 Thomas Terence M Polishing Copper-Containing patterned wafers
TW201038690A (en) 2008-09-26 2010-11-01 Rhodia Operations Abrasive compositions for chemical mechanical polishing and methods for using same
JP6350861B2 (ja) 2014-07-15 2018-07-04 スピードファム株式会社 コロイダルシリカ及びそれを含有する半導体ウエハ研磨用組成物
EP3357866A4 (en) * 2015-09-30 2019-06-19 Nippon Shokubai Co., Ltd. ZIRCONIUM-NANOPARTICLES

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102585765A (zh) * 2004-07-23 2012-07-18 日立化成工业株式会社 Cmp研磨剂以及衬底的研磨方法
JP2007103485A (ja) * 2005-09-30 2007-04-19 Fujifilm Corp 研磨方法及びそれに用いる研磨液
CN101375376A (zh) * 2006-01-31 2009-02-25 日立化成工业株式会社 绝缘膜研磨用cmp研磨剂、研磨方法、通过该研磨方法研磨的半导体电子部件
CN101437912A (zh) * 2006-03-20 2009-05-20 卡伯特微电子公司 氧化稳定的化学机械抛光组合物及方法
JP2009260236A (ja) * 2008-03-18 2009-11-05 Hitachi Chem Co Ltd 研磨剤、これを用いた基板の研磨方法並びにこの研磨方法に用いる溶液及びスラリー
JP2010272733A (ja) * 2009-05-22 2010-12-02 Hitachi Chem Co Ltd 研磨剤及びこの研磨剤を用いた基板の研磨方法
JP2016127268A (ja) * 2014-12-26 2016-07-11 花王株式会社 シリコンウェーハ用研磨液組成物、又はシリコンウェーハ用研磨液組成物キット
JP2017190381A (ja) * 2016-04-12 2017-10-19 花王株式会社 表面処理剤

Also Published As

Publication number Publication date
JP2021100126A (ja) 2021-07-01
KR20200101918A (ko) 2020-08-28
CN111511870A (zh) 2020-08-07
US20200369919A1 (en) 2020-11-26
JP7133667B2 (ja) 2022-09-08
KR102701367B1 (ko) 2024-08-30
JP6837958B2 (ja) 2021-03-03
US11795346B2 (en) 2023-10-24
TWI810232B (zh) 2023-08-01
WO2019131545A1 (ja) 2019-07-04
SG11202005634VA (en) 2020-07-29
JP2019121641A (ja) 2019-07-22
TW201930543A (zh) 2019-08-01

Similar Documents

Publication Publication Date Title
CN111511870B (zh) 氧化硅膜用研磨液组合物
US10619075B2 (en) Self-stopping polishing composition and method for bulk oxide planarization
JP7105089B2 (ja) シリコンウェーハの製造方法
KR20080078897A (ko) 화학 기계 연마용 수계 분산체 및 화학 기계 연마 방법, 및화학 기계 연마용 수계 분산체를 제조하기 위한 키트
JP6495230B2 (ja) シリコンウェーハ用リンス剤組成物
JP2016115809A (ja) 半導体基板用研磨液組成物
WO2006035779A1 (ja) Ｃｍｐ研磨剤及び基板の研磨方法
TWI680167B (zh) 氧化矽膜研磨用研磨液組合物
US20090325323A1 (en) Aqueous dispersion for chemical mechanical polishing, production method thereof, and chemical mechanical polishing method
EP3124569A1 (en) Polishing composition, and polishing method using same
JP7041714B2 (ja) 酸化珪素膜用研磨液組成物
JP7425660B2 (ja) 酸化珪素膜用研磨液組成物
JP7475184B2 (ja) 酸化珪素膜用研磨液組成物
KR102758095B1 (ko) 화학적 기계적 연마 슬러리 조성물 및 반도체 소자의 제조방법
CN118804960A (zh) 用于硅氧化物、硅氮化物及多晶硅的选择性及非选择性cmp的以氧化铈为主的浆料组合物
JP6811090B2 (ja) 酸化珪素膜用研磨液組成物
JP7421855B2 (ja) 研磨剤と研磨方法、および研磨用添加液
JP6797665B2 (ja) 研磨液組成物
JP7702851B2 (ja) シリコン基板の製造方法
WO2025115883A1 (ja) 研磨組成物
JP7252073B2 (ja) 酸化珪素膜用研磨液組成物
JP2025505182A (ja) 酸化ケイ素、窒化ケイ素及びポリシリコンの選択的及び非選択的ｃｍｐ用のセリア系スラリー組成物

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant