SG11202005634VA - Polishing liquid composition for silicon oxide film - Google Patents
Polishing liquid composition for silicon oxide filmInfo
- Publication number
- SG11202005634VA SG11202005634VA SG11202005634VA SG11202005634VA SG11202005634VA SG 11202005634V A SG11202005634V A SG 11202005634VA SG 11202005634V A SG11202005634V A SG 11202005634VA SG 11202005634V A SG11202005634V A SG 11202005634VA SG 11202005634V A SG11202005634V A SG 11202005634VA
- Authority
- SG
- Singapore
- Prior art keywords
- oxide film
- silicon oxide
- liquid composition
- polishing liquid
- polishing
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title 1
- 239000007788 liquid Substances 0.000 title 1
- 238000005498 polishing Methods 0.000 title 1
- 229910052814 silicon oxide Inorganic materials 0.000 title 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017253993A JP6837958B2 (en) | 2017-12-28 | 2017-12-28 | Abrasive liquid composition for silicon oxide film |
| PCT/JP2018/047344 WO2019131545A1 (en) | 2017-12-28 | 2018-12-21 | Polishing solution composition for silicon oxide films |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11202005634VA true SG11202005634VA (en) | 2020-07-29 |
Family
ID=67066422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11202005634VA SG11202005634VA (en) | 2017-12-28 | 2018-12-21 | Polishing liquid composition for silicon oxide film |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US11795346B2 (en) |
| JP (2) | JP6837958B2 (en) |
| KR (1) | KR20200101918A (en) |
| CN (1) | CN111511870B (en) |
| SG (1) | SG11202005634VA (en) |
| TW (1) | TWI810232B (en) |
| WO (1) | WO2019131545A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7252073B2 (en) * | 2019-06-26 | 2023-04-04 | 花王株式会社 | Polishing liquid composition for silicon oxide film |
| JPWO2021049253A1 (en) * | 2019-09-10 | 2021-03-18 | ||
| JP7464432B2 (en) | 2019-11-13 | 2024-04-09 | 花王株式会社 | Cleaning composition for semiconductor device substrates |
| CN113496868B (en) * | 2020-04-03 | 2023-03-10 | 重庆超硅半导体有限公司 | Method for cleaning polished silicon wafer |
| JP7425660B2 (en) | 2020-04-07 | 2024-01-31 | 花王株式会社 | Polishing liquid composition for silicon oxide film |
| WO2022102019A1 (en) * | 2020-11-11 | 2022-05-19 | 昭和電工マテリアルズ株式会社 | Polishing solution and polishing method |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000109810A (en) | 1998-10-08 | 2000-04-18 | Hitachi Chem Co Ltd | Polishing agent for cmp and polishing of substrate |
| JP2003158101A (en) | 2001-11-20 | 2003-05-30 | Hitachi Chem Co Ltd | Cmp abrasive and manufacturing method therefor |
| JP2004297035A (en) | 2003-03-13 | 2004-10-21 | Hitachi Chem Co Ltd | Abrasive agent, polishing method, and manufacturing method of electronic component |
| CN101311205A (en) | 2004-07-23 | 2008-11-26 | 日立化成工业株式会社 | Cmp polishing agent and method for polishing substrate |
| US7435356B2 (en) | 2004-11-24 | 2008-10-14 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Abrasive-free chemical mechanical polishing compositions and methods relating thereto |
| JP2007103485A (en) * | 2005-09-30 | 2007-04-19 | Fujifilm Corp | Polishing method, and polishing liquid used therefor |
| KR101245502B1 (en) * | 2006-01-31 | 2013-03-25 | 히타치가세이가부시끼가이샤 | Cmp abrasive for polishing insulating film, polishing method and semiconductor electronic component polished by such polishing method |
| US7732393B2 (en) | 2006-03-20 | 2010-06-08 | Cabot Microelectronics Corporation | Oxidation-stabilized CMP compositions and methods |
| US10087082B2 (en) * | 2006-06-06 | 2018-10-02 | Florida State University Research Foundation, Inc. | Stabilized silica colloid |
| US20090215266A1 (en) | 2008-02-22 | 2009-08-27 | Thomas Terence M | Polishing Copper-Containing patterned wafers |
| JP2009260236A (en) | 2008-03-18 | 2009-11-05 | Hitachi Chem Co Ltd | Abrasive powder, polishing method of substrate employing the same as well as solution and slurry employed for the polishing method |
| TW201038690A (en) | 2008-09-26 | 2010-11-01 | Rhodia Operations | Abrasive compositions for chemical mechanical polishing and methods for using same |
| JP2010272733A (en) * | 2009-05-22 | 2010-12-02 | Hitachi Chem Co Ltd | Abrasive and polishing method of substrate using the abrasive |
| JP6350861B2 (en) | 2014-07-15 | 2018-07-04 | スピードファム株式会社 | Colloidal silica and semiconductor wafer polishing composition containing the same |
| JP6655354B2 (en) * | 2014-12-26 | 2020-02-26 | 花王株式会社 | Polishing composition for silicon wafer or polishing composition kit for silicon wafer |
| US20180265372A1 (en) * | 2015-09-30 | 2018-09-20 | Nippon Shokubai Co., Ltd. | Zirconium oxide nanoparticles |
| JP6815092B2 (en) * | 2016-04-12 | 2021-01-20 | 花王株式会社 | Surface treatment agent |
-
2017
- 2017-12-28 JP JP2017253993A patent/JP6837958B2/en active Active
-
2018
- 2018-12-21 CN CN201880083779.4A patent/CN111511870B/en active Active
- 2018-12-21 KR KR1020207017358A patent/KR20200101918A/en not_active Application Discontinuation
- 2018-12-21 US US16/958,640 patent/US11795346B2/en active Active
- 2018-12-21 SG SG11202005634VA patent/SG11202005634VA/en unknown
- 2018-12-21 WO PCT/JP2018/047344 patent/WO2019131545A1/en active Application Filing
- 2018-12-28 TW TW107147620A patent/TWI810232B/en active
-
2021
- 2021-02-10 JP JP2021019577A patent/JP7133667B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN111511870B (en) | 2022-05-06 |
| KR20200101918A (en) | 2020-08-28 |
| CN111511870A (en) | 2020-08-07 |
| JP2019121641A (en) | 2019-07-22 |
| US20200369919A1 (en) | 2020-11-26 |
| JP6837958B2 (en) | 2021-03-03 |
| JP2021100126A (en) | 2021-07-01 |
| TWI810232B (en) | 2023-08-01 |
| JP7133667B2 (en) | 2022-09-08 |
| TW201930543A (en) | 2019-08-01 |
| US11795346B2 (en) | 2023-10-24 |
| WO2019131545A1 (en) | 2019-07-04 |
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