CN113496868B - Method for cleaning polished silicon wafer - Google Patents
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- CN113496868B CN113496868B CN202010258268.0A CN202010258268A CN113496868B CN 113496868 B CN113496868 B CN 113496868B CN 202010258268 A CN202010258268 A CN 202010258268A CN 113496868 B CN113496868 B CN 113496868B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The mixed cleaning agent is composed of an isolation humectant, a pH regulator, a slow release agent and a solution C, and the mixture ratio range of the components of the mixed cleaning agent is as follows: 5 to 10 portions of isolation humectantwt0.5-1.5 percent of PH regulatorwtPercent, solution 94.5-88.5wtPercent; the components are uniformly and stably mixed according to the proportion range, and the polished silicon wafer is subjected to immersion cleaning. The mixed cleaning agent forms a protective layer on the surface of the silicon wafer, so that spots remained in the polishing solution and impurities are prevented from being dried and fixed, the formation of an oxide film on the surface of the silicon wafer is inhibited, metal ions generated in the polishing process are captured, the silicon wafer is prevented from being polluted by metals, all pollution particles such as the silicon wafer, the residues of the polishing solution and the metal ions are effectively wrapped by the mixed cleaning agent, the surface pollution of the silicon wafer is prevented, the efficiency of the polishing and cleaning process is greatly improved, and the product percent of pass is improved.
Description
Technical Field
The invention belongs to the field of integrated circuit level silicon wafer processing and manufacturing, relates to a polishing process technology, and particularly relates to a cleaning method of an integrated circuit level silicon wafer.
Background
In the manufacturing process of the integrated circuit-grade silicon wafer, the silicon wafer is subjected to surface polishing, and the method mainly aims to remove micro defects and stress damage layers on the surface of the silicon wafer, which are remained in the previous process, and simultaneously remove impurity pollution of various metal ions and the like on the surface, obtain a clean and bright mirror surface with locally smooth surface and extremely low surface roughness, and meet the technical requirements of various microelectronic devices on the silicon wafer. The surface polishing technology of the silicon wafer is a key process in the silicon wafer processing, and the processing precision of the silicon wafer directly influences the technical indexes such as the performance, the qualification rate and the like of an IC chip.
Currently, the most common technique used for polishing the surface of a silicon wafer is a chemical mechanical polishing process, known as a CMP technique. During polishing, the surface of the silicon wafer reacts with alkaline polishing solution to generate soluble silicate, and the soluble silicate layer formed on the surface of the silicon wafer is wiped off under the mechanical friction action between silicon dioxide colloid in the polishing solution and the rapidly rotating soft polishing cloth, so that a new surface layer of the silicon wafer is exposed. In the polishing process, two actions of chemical corrosion and mechanical friction are alternately and circularly carried out, when the two actions tend to be dynamically balanced, the purpose of removing residual stress damage is achieved, and a mirror surface which is free of damage and high in geometric dimension precision is formed.
However, as the polishing is carried out, the new surface layer of the silicon wafer is continuously contacted with oxygen in the environment, and a natural oxidation film layer is easily formed on the surface of the silicon wafer; after polishing is finished, the polishing solution is easy to remain on the surface of the silicon wafer, and spots are generated on the surface of the silicon wafer after the surface of the silicon wafer is dried; meanwhile, metal ions removed in the polishing process are also easy to attach to the surface of the silicon wafer after the silicon wafer is dried. Usually, the next process, i.e. cleaning, is performed after the silicon wafer polishing is finished to remove the surface contamination of the silicon wafer. However, the formation of the oxide film on the surface of the silicon wafer, the adhesion of the polishing solution, the spots and the like bring great difficulty to the cleaning of the silicon wafer, and especially under the condition that the silicon wafer cannot be cleaned immediately after the polishing is finished, the contamination on the surface of the silicon wafer and the removal of the oxide film can even be caused, thereby greatly affecting the performance and the yield of the silicon wafer.
Aiming at the problems, the invention provides a method for cleaning a silicon wafer after polishing, which comprises the steps of placing the silicon wafer into a container filled with a mixed cleaning agent after the silicon wafer is polished in the last step, and completely immersing the silicon wafer into the mixed cleaning agent until the silicon wafer enters the next cleaning process. The mixed cleaning agent has two poles of hydrophobicity and hydrophilicity, a protective layer is formed on the surface of the silicon wafer, residual spots of polishing solution and drying and fixation of impurities are prevented, formation of an oxidation film on the surface of the silicon wafer is inhibited, metal ions generated in the polishing process are captured, the silicon wafer is prevented from being polluted by metal, the surface of the silicon wafer is isolated from all the polluted ions, as shown in a legend 1, the silicon wafer (1), the residues of the polishing solution, all the polluted particles (2) such as the metal ions and the like are wrapped by the mixed cleaning agent (3), and the polluted particles (2) are effectively isolated from the silicon wafer (1). Meanwhile, before the silicon wafer enters the next procedure, the mixed cleaning agent can be removed by using ultrapure water for cleaning, no contamination residue is left on the surface of the silicon wafer, the efficiency of the polishing and cleaning procedures is greatly improved, and the product percent of pass is improved.
Disclosure of Invention
In order to achieve the purpose, the invention provides a method for cleaning an integrated circuit silicon wafer after polishing, which is realized by the following technical scheme:
the mixed cleaning agent is composed of an isolation humectant, a pH regulator and a solution, and the mixture ratio range of the components of the mixed cleaning agent is as follows: 5 to 10 portions of isolation humectantwt0.5 to 1.5 percent of pH regulatorwtPercent, solution C94.5-88.5wtPercent; the components are uniformly and stably mixed according to the proportion range, and the polished silicon wafer is subjected to immersion cleaning.
The invention is technically characterized in that the mass ratio of the isolation humectant is 5-10wtPercent, the components are hydroxyl silicone oil (M) and acetonitrile (N), and the molecular formula of M is H [ (CH) 3 ) 2 SiO] n OH, in its formulanIs a positive integer and has a value range of:
(ii) a The molecular formula of N is C 2 H 3 N; the mass ratio of M to N is M: N = 1-2: 9-8.
The invention is technically characterized in that the mass ratio of the pH regulator is 0.5-1.5wt% of the chemical composition is alkyl phosphonic acid (X), the molecular formula of X is RP (O) (OH) 2 In the molecular formula, R represents an alkyl group and is a normal alkyl group, and the number m of carbon atoms in the R group is a positive integer and the value range is 8-20; wherein the value of n in the hydroxyl silicone oil (M) and the value of M in the alkyl phosphonic acid (X) have the following relationship:
29-3(n+1) ≤ m ≤ 29-3n
the invention is technically characterized in that the mass ratio of the solution is 94.5-88.5wt% of ethanol (Y) and water (Z), wherein the molecular formula of Y is C 2 H 5 OH, Z has a molecular formula of H 2 And the mass ratio of the O to the Y to the Z is Y: Z = 5-9: 5-1.
The invention is technically characterized in that the components are prepared into uniform and stable mixed cleaning agent according to the proportion range, after polishing is finished, the whole silicon wafer is immersed in a container filled with the mixed cleaning agent for immersion cleaning, and the immersion time t is less than or equal to 48 hours; after the silicon wafer is immersed and cleaned, ultra-pure water with the resistivity of more than 18M omega cm (25 ℃) is adopted for flow cleaning, the flow rate of the ultra-pure water is 20-50L/h, and the cleaning time is more than 0.5-1.0h.
Drawings
FIG. 1 is a schematic diagram of the action mechanism of the mixed cleaning agent on a silicon wafer.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
Example 1
Adopts a mixed cleaning agent which is composed of an isolation humectant 5wt% pH regulator 0.5wt% solution 94.5wt% of the composition. Wherein the isolation humectant is hydroxyl silicone oil (H [ (CH) 3 ) 2 SiO] 3 OH ] and acetonitrile [ C ] 2 H 3 And N ], wherein the mass ratio of the hydroxyl silicone oil to the acetonitrile is 1:9, namely the mass ratio of the hydroxyl silicone oil to the mixed cleaning agent is 0.5wtPercent and acetonitrile ratio of 4.5wtPercent; the PH regulator is n-eicosyl phosphonic acid [ C ] 20 H 41 P(O)(OH) 2 Is 0.5wtPercent; the solution component is ethanol [ C ] 2 H 5 OH and water [ H ] 2 O ], wherein the mass ratio of ethanol to water is 5:5, namely the mass ratio of the ethanol to the mixed cleaning agent is 47.25wtPercent, water ratio is 47.25wt% of the total weight of the composition. The components are prepared into uniform and stable mixed cleaning agent according to the mass ratio, and after polishing is finished, 50 silicon wafers are wholly immersed in a container filled with the mixed cleaning agent for immersion cleaning. After leaving standing for 5 hours, 50 silicon wafers were subjected to the next step, and 1 h was cleaned at an ambient temperature of 25 ℃ at a flow rate of 20L/h using ultrapure water having a resistivity of 18.1 M.OMEGA.cm. And carrying out flow cleaning on 50 silicon wafers immersed and cleaned by using the mixed cleaning agent.
After 50 silicon wafers are cleaned by flowing, the surfaces of the silicon wafers are examined by a microscope, and the stains and the particles attached to the surfaces of the silicon wafers are not detected. And after 50 silicon wafers are subjected to a final cleaning procedure, 10 silicon wafers are extracted and subjected to sampling detection by ICP-MS, wherein the surface metal content of 10 samples is below 1E9 atom. The cleaning method provided by the invention can prevent the silicon wafer from being polluted by surface contamination and metal particles, the polishing and cleaning efficiency is improved, and the product yield is improved by 5%.
Example 2
Adopts a mixed cleaning agent which is composed of an isolation humectant 5wt% pH regulator 0.5wt% solution 94.5wt% of the composition. Wherein the isolation humectant is hydroxyl silicone oil [ H [ (CH) 3 ) 2 SiO] 3 OH ] and acetonitrile [ C ] 2 H 3 And N ], wherein the mass ratio of the hydroxyl silicone oil to the acetonitrile is 1:9, namely the mass ratio of the hydroxyl silicone oil to the mixed cleaning agent is 0.5wtPercent and acetonitrile ratio of 4.5wtPercent; the pH regulator is n-heptadecyl phosphonic acid [ C ] 17 H 35 P(O)(OH) 2 Is 0.5wt%; the solution component is ethanol [ C ] 2 H 5 OH ] and water [ H ] 2 O ], wherein the mass ratio of ethanol to water is 5:5, namely the mass ratio of the ethanol to the mixed cleaning agent is 47.25wtPercent, water ratio is 47.25wt% of the total weight of the composition. The components are prepared into uniform and stable mixed cleaning agent according to the mass ratio, and after polishing is finished, 50 silicon wafers are wholly immersed in a container filled with the mixed cleaning agent for immersion cleaning. After leaving standing for 5 hours, 50 silicon wafers were subjected to the next step, and 1 h was cleaned at an ambient temperature of 25 ℃ at a flow rate of 20L/h using ultrapure water having a resistivity of 18.1 M.OMEGA.cm. And carrying out flow cleaning on 50 silicon wafers immersed and cleaned by using the mixed cleaning agent.
After 50 silicon wafers are cleaned by flowing, the surfaces of the silicon wafers are examined by a microscope, and the stains and the particles attached to the surfaces of the silicon wafers are not detected. And after 50 silicon wafers are subjected to a final cleaning procedure, 10 silicon wafers are extracted and subjected to sampling detection by ICP-MS, wherein the surface metal content of 10 samples is below 1E9 atom. The cleaning method provided by the invention can prevent the silicon wafer from being polluted by surface contamination and metal particles, the polishing and cleaning efficiency is improved, and the product yield is improved by 5%.
Example 3
Adopts a mixed cleaning agent which is composed of an isolation humectant 5wt% pH regulator 0.5wt% solution 94.5wt% of the composition. Wherein the isolation humectant is hydroxyl silicone oil (H [ (CH) 3 ) 2 SiO] 4 OH ] and acetonitrile [ C ] 2 H 3 And N ], wherein the mass ratio of the hydroxyl silicone oil to the acetonitrile is 1:9, i.e. hydroxy silicone oil-based mixed detergentIn a mass ratio of 0.5wtPercent and acetonitrile ratio of 4.5wtPercent; the pH regulator is n-heptadecyl phosphonic acid [ C ] 17 H 35 P(O)(OH) 2 Is 0.5wtPercent; the solution component is ethanol [ C ] 2 H 5 OH ] and water [ H ] 2 O ], wherein the mass ratio of ethanol to water is 5:5, namely the mass ratio of the ethanol to the mixed cleaning agent is 47.25wtPercent, water ratio is 47.25wt%. The components are prepared into uniform and stable mixed cleaning agent according to the mass ratio, and after polishing is finished, 50 silicon wafers are wholly immersed in a container filled with the mixed cleaning agent for immersion cleaning. After leaving standing for 5 hours, 50 silicon wafers were subjected to the next step, and 1 h was cleaned at an ambient temperature of 25 ℃ at a flow rate of 20L/h using ultrapure water having a resistivity of 18.1 M.OMEGA.cm. And (3) carrying out flow cleaning on the 50 silicon wafers immersed and cleaned by using the mixed cleaning agent.
After 50 silicon wafers are cleaned by flowing, the surfaces of the silicon wafers are examined by a microscope, and the stains and the particles attached to the surfaces of the silicon wafers are not detected. And after 50 silicon wafers are subjected to a final cleaning procedure, 10 silicon wafers are extracted and subjected to sampling detection by ICP-MS, wherein the surface metal content of 10 samples is below 1E9 atom. The cleaning method provided by the invention can prevent the silicon wafer from being polluted by surface contamination and metal particles, the polishing and cleaning efficiency is improved, and the product yield is improved by 5%.
Example 4
Adopts a mixed cleaning agent which is composed of an isolation humectant 5wt% pH regulator 0.5wt% solution 94.5wt% of the composition. Wherein the isolation humectant is hydroxyl silicone oil (H [ (CH) 3 ) 2 SiO] 4 OH ] and acetonitrile [ C ] 2 H 3 N ], wherein the mass ratio of the hydroxyl silicone oil to the acetonitrile is 1:9, namely the mass ratio of the hydroxyl silicone oil to the mixed cleaning agent is 0.5wtPercent and acetonitrile ratio of 4.5wtPercent; the pH regulator is n-tetradecylphosphonic acid [ C ] 14 H 29 P(O)(OH) 2 Is 0.5wtPercent; the solution component is ethanol [ C ] 2 H 5 OH ] and water [ H ] 2 O ], wherein the mass ratio of ethanol to water is 5:5, namely the mass ratio of the ethanol to the mixed cleaning agent is 47.25wtPercent, water ratio is 47.25wt% of the total weight of the composition. The components are prepared into uniform and stable mixed cleaning agent according to the mass ratio, and after polishing is finished, 50 silicon wafers are wholly immersed in a container filled with the mixed cleaning agent for immersion cleaning. After leaving standing for 5 hours, 50 silicon wafers were subjected to the next step, and 1 h was cleaned at an ambient temperature of 25 ℃ at a flow rate of 20L/h using ultrapure water having a resistivity of 18.1 M.OMEGA.cm. And (3) carrying out flow cleaning on the 50 silicon wafers immersed and cleaned by using the mixed cleaning agent.
After 50 silicon wafers are cleaned by flowing, the surfaces of the silicon wafers are examined by a microscope, and the stains and the particles attached to the surfaces of the silicon wafers are not detected. And after 50 silicon wafers are subjected to a final cleaning procedure, 10 silicon wafers are extracted and subjected to sampling detection by ICP-MS, wherein the surface metal content of 10 samples is below 1E9 atom. The cleaning method provided by the invention can prevent the silicon wafer from being polluted by surface contamination and metal particles, the polishing and cleaning efficiency is improved, and the product yield is improved by 5%.
Example 5
Adopts a mixed cleaning agent which is composed of an isolation humectant 5wt% pH regulator 0.5wt% solution 94.5wt% of the composition. Wherein the isolation humectant is hydroxyl silicone oil (HO [ (CH) 3 ) 2 SiO] 5 H ] and acetonitrile [ C ] 2 H 3 And N ], wherein the mass ratio of the hydroxyl silicone oil to the acetonitrile is 2:8, namely the mass ratio of the hydroxyl silicone oil to the mixed cleaning agent is 1wtPercent, acetonitrile ratio is 4wtPercent; the pH regulator is n-tetradecylphosphonic acid [ C ] 14 H 29 P(O)(OH) 2 Is 0.5wtPercent; the solution component is ethanol [ C ] 2 H 5 OH ] and water [ H ] 2 O ], wherein the mass ratio of ethanol to water is 9:1, namely the mass ratio of the ethanol to the mixed cleaning agent is 85.05wtPercent, water ratio is 9.45wt% of the total weight of the composition. The components are prepared into uniform and stable mixed cleaning agent according to the mass ratio, and after polishing is finished, 50 silicon wafers are wholly immersed in a container filled with the mixed cleaning agent for immersion cleaning. After leaving for 24 hours, 50 silicon wafers were subjected to the next step, and 50 silicon wafers immersed and cleaned with the mixed cleaning agent were subjected to flow cleaning at an ambient temperature of 25 ℃ with ultrapure water having a resistivity of 18.1 M.OMEGA.cm.
After 50 silicon wafers are cleaned by flowing, the surfaces of the silicon wafers are examined by a microscope, and the stains and the particles attached to the surfaces of the silicon wafers are not detected. And after 50 silicon wafers are subjected to a final cleaning procedure, 10 silicon wafers are extracted and subjected to sampling detection by ICP-MS, wherein the surface metal content of 10 samples is below 1E9 atom. The cleaning method provided by the invention can prevent the silicon wafer from being polluted by surface contamination and metal particles, and improve the polishing efficiency, the cleaning efficiency and the product yield.
Example 6
Adopts a mixed cleaning agent which is composed of an isolation humectant 5wt% pH regulator 0.5wt% solution 94.5wt% of the composition. Wherein the isolation humectant is hydroxyl silicone oil (HO [ (CH) 3 ) 2 SiO] 5 H ] and acetonitrile [ C ] 2 H 3 N ], wherein the mass ratio of the hydroxyl silicone oil to the acetonitrile is 2:8, namely the mass ratio of the hydroxyl silicone oil to the mixed cleaning agent is 1wtPercent, acetonitrile ratio is 4wt%; the pH regulator is n-undecylphosphonic acid [ C ] 11 H 23 P(O)(OH) 2 Is 0.5wt%; the solution component is ethanol [ C ] 2 H 5 OH ] and water [ H ] 2 O ], wherein the mass ratio of ethanol to water is 9:1, namely the mass ratio of the ethanol to the mixed cleaning agent is 85.05wtPercent, water ratio is 9.45wt% of the total weight of the composition. The components are prepared into uniform and stable mixed cleaning agent according to the mass ratio, and after polishing is finished, 50 silicon wafers are wholly immersed in a container filled with the mixed cleaning agent for immersion cleaning. After leaving for 24 hours, 50 silicon wafers were subjected to the next step, and 50 silicon wafers immersion-cleaned with the mixed cleaning agent were subjected to flow cleaning at an ambient temperature of 25 ℃ using ultrapure water having a resistivity of 18.1 M.OMEGA.. Cm.
After 50 silicon wafers are cleaned by flowing, the surfaces of the silicon wafers are examined by a microscope, and the stains and the particles attached to the surfaces of the silicon wafers are not detected. And after 50 silicon wafers are subjected to a final cleaning procedure, 10 silicon wafers are extracted and subjected to sampling detection by ICP-MS, wherein the surface metal content of 10 samples is below 1E9 atom. The cleaning method provided by the invention can prevent the silicon wafer from being polluted by surface contamination and metal particles, and improve the polishing efficiency, the cleaning efficiency and the product yield.
Example 7
Adopts a mixed cleaning agent which is composed of an isolation humectant 5wt% pH regulator 0.5wt% solution 94.5wt% of the composition. Wherein the isolation humectant is hydroxyl silicone oil (HO [ (CH) 3 ) 2 SiO] 6 H ] and acetonitrile [ C ] 2 H 3 And N ], wherein the mass ratio of the hydroxyl silicone oil to the acetonitrile is 2:8, namely the mass ratio of the hydroxyl silicone oil to the mixed cleaning agent is 1wtPercent, acetonitrile ratio is 4wtPercent; the pH regulator is n-undecylphosphonic acid [ C ] 11 H 23 P(O)(OH) 2 Is 0.5wtPercent; the solution component is ethanol [ C ] 2 H 5 OH ] and water [ H ] 2 O ], wherein the mass ratio of ethanol to water is 9:1, namely the mass ratio of the ethanol to the mixed cleaning agent is 85.05wtPercent, water ratio is 9.45wt% of the total weight of the composition. The components are prepared into uniform and stable mixed cleaning agent according to the mass ratio, and after polishing is finished, 50 silicon wafers are wholly immersed in a container filled with the mixed cleaning agent for immersion cleaning. After leaving for 24 hours, 50 silicon wafers were subjected to the next step, and 50 silicon wafers immersion-cleaned with the mixed cleaning agent were subjected to flow cleaning at an ambient temperature of 25 ℃ using ultrapure water having a resistivity of 18.1 M.OMEGA.. Cm.
After 50 silicon wafers are cleaned by flowing, the surfaces of the silicon wafers are examined by a microscope, and the stains and the particles attached to the surfaces of the silicon wafers are not detected. And after 50 silicon wafers are subjected to a final cleaning procedure, 10 silicon wafers are extracted and subjected to sampling detection by ICP-MS, wherein the surface metal content of 10 samples is below 1E9 atom. The cleaning method provided by the invention can prevent the silicon wafer from being polluted by surface contamination and metal particles, and improve the polishing efficiency, the cleaning efficiency and the product yield.
Example 8
Adopts a mixed cleaning agent which is composed of an isolation humectant 5wt% pH regulator 0.5wt% solution 94.5wt% of the composition. Wherein the isolation humectant is hydroxyl silicone oil (HO [ (CH) 3 ) 2 SiO] 6 H ] and acetonitrile [ C ] 2 H 3 And N ], wherein the mass ratio of the hydroxyl silicone oil to the acetonitrile is 2:8, namely the mass ratio of the hydroxyl silicone oil to the mixed cleaning agent is 1wtPercent, acetonitrile ratio is 4wtPercent; the pH regulator is n-octaalkylphosphonic acid [ C ] 8 H 17 P(O)(OH) 2 Is 0.5wtPercent; the solution component is ethanol [ C ] 2 H 5 OH ] and water [ H ] 2 O ], wherein the mass ratio of ethanol to water is 9:1, namely the mass ratio of the ethanol to the mixed cleaning agent is 85.05wtPercent, water ratio is 9.45wt% of the total weight of the composition. The components are prepared into uniform and stable mixed cleaning agent according to the mass ratio, and after polishing is finished, 50 silicon wafers are wholly immersed in a container filled with the mixed cleaning agent for immersion cleaning. After leaving for 24 hours, 50 silicon wafers were subjected to the next step, and 50 silicon wafers immersed and cleaned with the mixed cleaning agent were subjected to flow cleaning at an ambient temperature of 25 ℃ with ultrapure water having a resistivity of 18.1 M.OMEGA.cm.
After 50 silicon wafers are cleaned by flowing, the surfaces of the silicon wafers are examined by a microscope, and the stains and the particles attached to the surfaces of the silicon wafers are not detected. And after 50 silicon wafers are subjected to a final cleaning procedure, 10 silicon wafers are extracted and subjected to sampling detection by ICP-MS, wherein the surface metal content of 10 samples is below 1E9 atom. The cleaning method provided by the invention can prevent the silicon wafer from being polluted by surface contamination and metal particles, and improve the polishing efficiency, the cleaning efficiency and the product yield.
Example 9
Adopts a mixed cleaning agent which is composed of an isolation humectant 10wt% pH regulator 1.5wt% solution 88.5wt% of the composition. Wherein the isolation humectant is hydroxyl silicone oil (HO [ (CH) 3 ) 2 SiO] 7 H ] and acetonitrile [ C ] 2 H 3 And N ], wherein the mass ratio of the hydroxyl silicone oil to the acetonitrile is 1:9, namely the mass ratio of the hydroxyl silicone oil to the mixed cleaning agent is 1wtPercent, acetonitrile ratio is 9wtPercent; the PH regulator is n-octaalkylphosphonic acid [ C ] 8 H 17 P(O)(OH) 2 Is at a ratio of 1.5wtPercent; the solution component is ethanol [ C ] 2 H 5 OH ] and water [ H ] 2 O ], wherein the mass ratio of ethanol to water is 5:5, namely the mass ratio of the ethanol to the mixed cleaning agent is 44.25wtPercent, water ratio is 44.25wt% of the total weight of the composition. The components are prepared into uniform and stable mixed clear liquid according to the mass ratioAnd (3) cleaning the whole 50 silicon wafers by immersing in a container filled with the mixed cleaning agent after polishing is finished. After leaving for 1 hour, 50 silicon wafers were subjected to the next step, and 50 silicon wafers immersed and cleaned with the mixed cleaning agent were subjected to flow cleaning at an ambient temperature of 25 ℃ with ultrapure water having a resistivity of 18.1 M.OMEGA.cm.
After 50 silicon wafers are cleaned by flowing, the surfaces of the silicon wafers are examined by a microscope, and the stains and the particles attached to the surfaces of the silicon wafers are not detected. And after 50 silicon wafers are subjected to a final cleaning procedure, 10 silicon wafers are extracted and subjected to sampling detection by ICP-MS, wherein the surface metal content of 10 samples is below 1E9 atom. The cleaning method provided by the invention can prevent the silicon wafer from being polluted by surface contamination and metal particles, and improve the polishing efficiency, the cleaning efficiency and the product yield.
Claims (2)
1. A method for cleaning a silicon wafer after polishing is characterized in that a mixed cleaning agent is adopted, the mixed cleaning agent is composed of an isolation humectant, a pH regulator and a solution C, and the mixture ratio range of the components of the mixed cleaning agent is as follows: 5 to 10 weight percent of isolation humectant, 0.5 to 1.5 weight percent of pH regulator and 94.5 to 88.5 weight percent of solution,
the isolation humectant comprises hydroxy silicone oil M and acetonitrile N, wherein the molecular formula of M is H [ (CH) 3 ) 2 SiO] n OH, wherein n in the molecular formula is a positive integer and the value range is as follows: n is more than or equal to 3 and less than or equal to 7; the molecular formula of N is C 2 H 3 N; the mass ratio of M to N is M: N = 1-2:9-8;
the chemical component of the pH regulator is alkyl phosphonic acid X, and the molecular formula of X is RP (O) (OH) 2 In the molecular formula, R represents an alkyl group and is a normal alkyl group, and the number m of carbon atoms in the R group is a positive integer and the value range is 8-20;
the value of n in the hydroxyl silicone oil M and the value of M in the alkyl phosphonic acid X are related as follows: m is more than or equal to 29-3 (n + 1) and less than or equal to 29-3n;
the solution C contains ethanol Y and water Z, and the molecular formula of Y is C 2 H 5 OH, Z has a molecular formula of H 2 The mass ratio of O, Y and Z is Y: Z = 5-9:5-1;
the components are prepared into a mixed cleaning agent according to the proportion range, the polished silicon wafer is subjected to immersion cleaning, and flow cleaning is performed by adopting ultrapure water after immersion cleaning.
2. The method for cleaning the silicon wafer after polishing as claimed in claim 1, wherein the components are prepared into a mixed cleaning agent according to the mixture ratio range, and the silicon wafer is wholly immersed in the mixed cleaning agent after polishing for less than or equal to 48 hours; after the silicon wafer is immersed and cleaned, flow cleaning is carried out under ultrapure water with the resistivity of more than 18M omega cm at the temperature of 25 ℃, the flow of the ultrapure water is 20-50L/h, and the cleaning time is more than 0.5-1.0h.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008182221A (en) * | 2006-12-28 | 2008-08-07 | Sanyo Chem Ind Ltd | Cleaning agent for semiconductor substrate |
| CN102820210A (en) * | 2011-06-08 | 2012-12-12 | 安集微电子（上海）有限公司 | Method for cleaning chemically and mechanically polished silicon wafer |
| JP2015070008A (en) * | 2013-09-26 | 2015-04-13 | 株式会社フジミインコーポレーテッド | Composition for polishing, manufacturing method of the same, and manufacturing method of silicon wafer |
| CN105903694A (en) * | 2016-04-27 | 2016-08-31 | 上海超硅半导体有限公司 | Cleaning method and back-side defect reworking method for large-size sapphire substrate before annealing |
| CN207372924U (en) * | 2017-08-02 | 2018-05-18 | 上海超硅半导体有限公司 | A kind of sapphire substrate sheet double-sided polisher |
| JP2019121641A (en) * | 2017-12-28 | 2019-07-22 | 花王株式会社 | Polishing liquid composition for silicon oxide film |
| JP2019179890A (en) * | 2018-03-30 | 2019-10-17 | 株式会社フジミインコーポレーテッド | Silicon wafer polishing method and polishing composition |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7513920B2 (en) * | 2002-02-11 | 2009-04-07 | Dupont Air Products Nanomaterials Llc | Free radical-forming activator attached to solid and used to enhance CMP formulations |
| KR101382998B1 (en) * | 2007-08-22 | 2014-04-09 | 다이킨 고교 가부시키가이샤 | Solution for removal of residue after semiconductor dry processing, and residue removal method using the same |
| EP2808379A1 (en) * | 2013-05-29 | 2014-12-03 | The Procter & Gamble Company | Liquid cleaning and/or cleansing composition |
| US11085011B2 (en) * | 2018-08-28 | 2021-08-10 | Entegris, Inc. | Post CMP cleaning compositions for ceria particles |
-
2020
- 2020-04-03 CN CN202010258268.0A patent/CN113496868B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008182221A (en) * | 2006-12-28 | 2008-08-07 | Sanyo Chem Ind Ltd | Cleaning agent for semiconductor substrate |
| CN102820210A (en) * | 2011-06-08 | 2012-12-12 | 安集微电子（上海）有限公司 | Method for cleaning chemically and mechanically polished silicon wafer |
| JP2015070008A (en) * | 2013-09-26 | 2015-04-13 | 株式会社フジミインコーポレーテッド | Composition for polishing, manufacturing method of the same, and manufacturing method of silicon wafer |
| CN105903694A (en) * | 2016-04-27 | 2016-08-31 | 上海超硅半导体有限公司 | Cleaning method and back-side defect reworking method for large-size sapphire substrate before annealing |
| CN207372924U (en) * | 2017-08-02 | 2018-05-18 | 上海超硅半导体有限公司 | A kind of sapphire substrate sheet double-sided polisher |
| JP2019121641A (en) * | 2017-12-28 | 2019-07-22 | 花王株式会社 | Polishing liquid composition for silicon oxide film |
| JP2019179890A (en) * | 2018-03-30 | 2019-10-17 | 株式会社フジミインコーポレーテッド | Silicon wafer polishing method and polishing composition |
Non-Patent Citations (1)
| Title |
|---|
| 专利文摘;王元荪;《中国洗涤用品工业》;20120915(第09期);正文全文 * |
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