CN111490064A - Display panel and manufacturing method thereof - Google Patents
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
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- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
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Abstract
The invention discloses a display panel and a manufacturing method thereof, wherein the display panel comprises a substrate, a pixel array area and a signal control circuit, wherein a chip of the signal control circuit is a carbon-based CMOS chip, can be positioned at the periphery or the lower layer of the pixel array area, is attached to the pixel array area without a lead, and is integrated on the substrate 1 with the pixel array area; the width of the display panel frame may be on the order of the pixel pitch or zero. The manufacturing method of the display panel is also provided, firstly, the carbon nano material film is prepared on the substrate, then the p-type transistor and the n-type transistor are prepared on the carbon nano material film and connected to form the carbon nano material CMOS signal control circuit, then the insulating layer is grown on the surface of the carbon nano material CMOS signal control circuit, and finally the display driving TFT array circuit and the pixel array are prepared on the insulating layer, so that the manufacturing of the display panel is completed. The display panel provided by the invention avoids the attachment of a signal control chip in the production of a common display panel, and can realize the screen splicing at the pixel pitch level.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel comprising a carbon-based CMOS chip and a manufacturing method thereof.
Background
In the conventional flat panel display manufacturing process, a signal control IC (Integrated Circuit) chip is required to be attached around a pixel array, so that the size of a display panel is larger than that of a pixel area, and a frame area without display pixels exists. Due to the need of the lead bonding signal to control the IC chip, the flat panel display must have a certain frame area around the image display area. Narrow bezel is a development requirement and trend for flat panel displays. Although the width of the frame becomes narrower with the progress of the technology, the frame is always present because the signal control IC chip must be attached to the lead.
In the existing flat panel display technology, pixels in a display screen are distributed in an array form, and each row or column is connected with a signal control lead. The signal control leads are arranged at the periphery of the pixel area in a gathering mode and attached to an IC chip used for controlling the display state of each pixel unit. These signal control IC chips are typically fabricated using silicon-based integrated circuit technology. The signal control IC chip manufactured by using the silicon-based integrated circuit technology is because the transistor (TFT) for controlling the pixel array and the image signal control chip have different requirements on the performance of the transistor, and the high-speed processing requirement of the image signal puts higher requirements on the performance of the corresponding circuit/transistor. Although the flat panel display manufacturing process also comprises the preparation of the transistor (the driving TFT array in the display back panel), the performance of the TFT prepared in the way can only meet the control of the pixel display state and cannot meet the processing requirement of a row and column scanning control signal. That is, the manufacturing process of the signal control IC chip is incompatible with the manufacturing process of the display driving TFT array, so that the silicon-based IC chip must be attached to the peripheral leads of the pixel array, and the existence of the screen frame becomes inevitable. Although the width and thickness of the signal control IC chip can be made very small, such as the width of a typical signal control IC chip is 1-2mm, and the thickness is about 1mm, it is limited by the width and thickness that the reduction of the frame is difficult.
The presence of a bezel is an important issue that must be considered for the design and application of display products, particularly in tiled screens. Usually, the oversized display screen is formed by splicing screens with smaller sizes, and the frame width of the screens is very important for the display effect of the spliced screen. The narrower the frame is, the better the display effect of the spliced screen is.
However, the current control signals are all realized by attaching a silicon-based chip to the leads around the pixel array, and a production scheme for directly manufacturing the signal control chip on the back plate is not available.
The signal control IC chip used in the existing flat panel display manufacturing process usually adopts a silicon-based CMOS (Complementary Metal Oxide Semiconductor) technology, i.e., a large number of microelectronic devices (transistors, resistors, capacitors, etc.) are integrated on a silicon chip to form an integrated circuit. It is this silicon-based CMOS technology that results in the manufacturing process of the signal control IC chip being incompatible with the manufacturing process of the display driver TFT array. The carbon-based CMOS technology is a new integrated circuit preparation technology, generally adopts semiconductor type carbon nano tubes, carbon nano wires and the like as channel materials, contacts with the carbon nano tubes and the carbon nano wires through electrodes with different work functions to obtain p-type and n-type transistors, and constructs a CMOS circuit. The carbon nanotube material has excellent mechanical flexibility and light transmittance, so that a flexible, transparent and high-performance CMOS integrated circuit can be prepared. The carbon-based CMOS integrated circuit can be prepared at low temperature, and simultaneously, due to the excellent electrical characteristics of the carbon nanotube material, the carbon-based CMOS integrated circuit is higher in speed, lower in power consumption and smaller in size, and the performance of the carbon-based CMOS integrated circuit far exceeds that of a silicon-based transistor with the same technical node, so that the TFT for controlling the pixel array and the CMOS control circuit for controlling the display image signals can be simultaneously prepared on the display back plate glass by adopting the carbon nanotube material through a low-temperature preparation process, namely, the carbon-based CMOS technology has processing compatibility with the display driving TFT technology.
At present, the display panel is not manufactured by adopting a carbon-based CMOS technology in the prior art.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to solve the technical problem of avoiding the attachment of a signal control chip in the production of a common display panel and realizing the screen splicing at the pixel pitch level. The invention aims to provide the novel display panel and the preparation method thereof.
One aspect of the present invention provides a display panel, including a substrate, a pixel array region and a signal control circuit chip, wherein: the signal control circuit chip (3) is a carbon-based CMOS signal control chip, no lead is attached between the signal control circuit chip (3) and the pixel array area (2), and the signal control circuit chip and the pixel array area (2) are integrated on the substrate (1).
Preferably, the signal control circuit chip (3) is located at the periphery of the pixel array area (2) or at the lower layer of the pixel array area (2).
Preferably, the signal control circuit chip (3) is formed by connecting a p-type transistor (302) and an n-type transistor (303) which adopt carbon nano materials as channel materials.
Preferably, the carbon nanomaterial comprises carbon nanotubes, carbon nanowires, graphene, fullerene, carbon nanofibers, carbon nanospheres, and the like, wherein the carbon nanotubes comprise single-walled and multi-walled carbon nanotubes.
Preferably, said p-type transistor (302) is made of a high work function metal selected from the group consisting of Pd, Pt, Ni, Au;
the n-type transistor (303) is made of a low work function metal selected from Sc and Al in contact with the carbon nanomaterial.
Preferably, the pixel array region (2) is composed of a display drive TFT array and a pixel array.
Preferably, the display driving TFT is selected from amorphous silicon TFT, low temperature polysilicon TFT, oxide semiconductor TFT and carbon nanotube TFT, and the pixel array (2) is selected from O L ED, liquid crystal and micro-L ED.
In another aspect, the present invention further provides a method for manufacturing the display panel, including the following steps:
step A: preparing a carbon nano material film (301) on a substrate (1);
and B: patterning the carbon nanomaterial film (301) by using a photoetching process; further fabricating a p-type transistor (302) and an n-type transistor (303) on the carbon nanomaterial thin film (301); connecting the p-type transistor (302) and the n-type transistor (302) to form a carbon-based CMOS signal control chip (3);
and C: an insulating layer (304) grows on the surface of the carbon-based CMOS signal control chip (3) to protect the carbon-based CMOS signal control chip (3);
step D: and preparing a pixel array area (2) comprising a display driving TFT array and a pixel array in the central area of the surface of the insulating layer (304), and finishing the preparation of the display panel.
Preferably, the carbon nanomaterial film (301) in step a comprises carbon nanotubes, carbon nanowires, graphene, fullerene, carbon nanofibers or carbon nanospheres, wherein the carbon nanotubes comprise single-walled or multi-walled carbon nanotubes.
Preferably, the carbon nanomaterial membrane (301) is produced by arc discharge, laser ablation, chemical vapor deposition, solid phase pyrolysis, glow discharge, gas combustion, or polymerization synthesis.
Preferably, the carbon nanomaterial film (301) in step a is formed by spraying, dipping, transferring a carbon nanomaterial solution.
Preferably, the carbon-based CMOS signal control chip (3) in steps B and C is formed on the periphery of the pixel array region (2) or on the lower layer of the pixel array region (2).
Preferably, the first and second electrodes are formed of a metal,
in the step B, the p-type transistor (302) is made of high work function metal in contact with the carbon nano material film (301), and the high work function metal is selected from Pd, Pt, Ni and Au;
the n-type transistor (302) is made of a low work function metal selected from Sc and Al in contact with the carbon nanomaterial.
Preferably, the insulating layer (304) in step C is silicon oxide or silicon nitride.
Preferably, the display driving TFT in the step D is selected from amorphous silicon TFT, low-temperature polysilicon TFT, oxide semiconductor TFT and carbon nanotube TFT, and the pixel array is selected from O L ED, liquid crystal, micro-L ED and the like.
The invention has the beneficial effects that: the invention adopts the carbon-based CMOS technology, directly prepares the pixel signal control circuit on the display substrate, can prepare the signal control circuit chip at the periphery of the pixel array or at the lower layer of the pixel array, and can effectively reduce the frame width. Particularly, the chip is prepared below the pixel array, so that the width of a frame can reach the magnitude order of pixel spacing, and the screen splicing of the pixel spacing level can be realized. If the signal control circuit chip and the driving TFT are both made of carbon nano materials, the display panel driven by all carbon bases can be realized.
The carbon-based CMOS signal control circuit and the all-carbon-based driving display panel technology proposed by the present invention can be used for various display products, such as flexible display panels, transparent display panels, L CDs,
o L ED, micro-L ED, and the like.
Drawings
The display panel and the manufacturing method thereof of the present invention are described below with reference to the accompanying drawings
The foregoing and other objects, features, and advantages of the invention will be apparent from the following more particular description of the invention, as illustrated in the accompanying drawings in which:
fig. 1 is a schematic diagram of a display panel structure of a signal control circuit chip on a pixel array side, where 2 is a pixel array region including a display driving TFT array and O L ED pixels, and 3 is a signal control circuit chip including carbon nano material transistors.
Fig. 2 is a schematic structural diagram of a display panel with a signal control circuit chip on a lower layer of a pixel array, wherein 1 is a display panel substrate, 2 is a pixel array region including a display driving TFT array and O L ED pixels, and 3 is a signal control circuit chip including carbon nano-material transistors.
FIG. 3 is a schematic diagram of a process for fabricating a display panel.
Fig. 4 is a schematic structural diagram of a carbon nanotube film 301 fabricated on a display substrate.
Fig. 5 is a schematic structural diagram of the carbon-based CMOS signal control chip 3 prepared from the carbon nanomaterial film 301.
Fig. 6 is a schematic structural diagram of the carbon-based CMOS signal control chip 3 after an insulating layer 304 is grown on the surface.
Fig. 7 is a schematic structural view of a display panel completed after a pixel array region 2 is prepared in a central region of the surface of an insulating layer 304, and a carbon-based CMOS signal control chip 3 is located at the periphery of the pixel array region 2.
Fig. 8 is a schematic structural diagram of a display panel completed after a pixel array region 2 is prepared on the surface of an insulating layer 304, and a carbon-based CMOS signal control chip 3 is located at the lower layer of the pixel array region 2.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. Like elements in the drawings are represented by like reference numerals, and parts of the drawings are not drawn to scale. In addition, certain well known components may not be shown. For simplicity, the semiconductor structure obtained after several steps can be described in one figure.
It will be understood that when a layer or region is referred to as being "on" or "over" another layer or region in describing the structure of the device, it can be directly on the other layer or region or intervening layers or regions may also be present. And, if the device is turned over, that layer, region, or regions would be "under" or "beneath" another layer, region, or regions.
If for the purpose of describing the situation directly above another layer, another region, the expression "a directly above B" or "a above and adjacent to B" will be used herein. In the present application, "a is directly in B" means that a is in B and a and B are directly adjacent, rather than a being in a doped region formed in B.
Example 1:
the embodiment provides a display panel, which comprises a substrate 1, a pixel array area 2 and a signal control circuit chip 3, wherein the signal control circuit chip 3 is a carbon-based CMOS signal control chip, the signal control circuit chip 3 is attached to the pixel array area 2 without a lead, and is integrated with the pixel array area 2 on the substrate 1, as shown in fig. 1, the signal control circuit chip 3 is located at the periphery of the pixel array area 2, the frame width of the formed display panel reaches the magnitude of the pixel pitch, the signal control circuit chip 3 is a carbon-based CMOS signal control chip composed of p-type and n-type transistors using single-walled carbon nanotubes as channel materials, wherein the p-type transistor is made by contacting metal Pd with the single-walled carbon nanotubes, the n-type transistor is made by contacting metal Sc with the single-walled carbon nanotubes, the pixel array area 2 is composed of a display driving TFT array and a pixel array, wherein the display driving TFT is a silicon TFT, and the pixel array is amorphous O L.
Fig. 3 shows a schematic diagram of manufacturing a display panel according to the present invention, fig. 4-7 specifically show specific steps of manufacturing the display panel according to the present invention, and a detailed description of a specific embodiment of the present invention will be made according to the steps shown in fig. 4-7.
According to the step A, preparing the single-walled carbon nanotube by adopting an arc discharge method, and then spraying the single-walled carbon nanotube solution on the glass substrate 1 to prepare a single-walled carbon nanotube film 301 as shown in figure 4; further according to the step B, patterning the carbon nanotube film 301 by adopting a photoetching process; further adopting high work function metal Pd to contact with the carbon nano tube film 301 to prepare a p-type transistor 302, and adopting low work function metal Sc to contact with the carbon nano tube film 301 to prepare an n-type transistor 303; further connecting the p-type and n-type transistors constitutes the entire carbon nanotube CMOS signal control circuit 3, as shown in fig. 5. Further according to step C, a layer of silicon oxide is grown on the surface of the carbon nanotube CMOS signal control circuit 3 as an insulating layer 304 to protect the carbon nanotube CMOS signal control circuit 3, as shown in fig. 6. Further according to step D, a pixel array region 2 including a display driving TFT array and a pixel array is prepared in the central region of the surface of the insulating layer 304, so that the pixel array region 2 is located at the middle position surrounded by the carbon nanotube CMOS signal control circuit 3, thereby completing the preparation of the display panel, as shown in fig. 7.
Example 2:
the embodiment provides a borderless display panel, which comprises a substrate 1, a pixel array area 2 and a signal control circuit chip 3, wherein the signal control circuit chip 3 is a carbon-based CMOS signal control chip, the signal control circuit chip 3 is attached to the pixel array area 2 without a lead wire, and is integrated with the pixel array area 2 on the substrate 1, as shown in fig. 2, the signal control circuit chip 3 is located at the lower layer of the pixel array area 2, the formed display panel is borderless, the signal control circuit chip 3 is a carbon-based CMOS signal control chip composed of p-type and n-type transistors using single-walled carbon nanotubes as channel materials, wherein the p-type transistor is made by contacting metal Pd with the single-walled carbon nanotubes, the n-type transistor is made by contacting metal Sc with the single-walled carbon nanotubes, the pixel array area 2 is composed of a display driving TFT array and a pixel array, wherein the display driving TFT is amorphous silicon TFT, and the pixel array is O L ED.
Fig. 3 is a schematic diagram illustrating a manufacturing process of a display panel according to the present invention, fig. 4-6 and fig. 8 are specific diagrams illustrating specific steps of manufacturing a display panel according to the present invention, and a detailed description will be given below of a specific embodiment of the present invention according to the steps illustrated in fig. 4-6 and fig. 8.
According to the step A, preparing the single-walled carbon nanotube by adopting an arc discharge method, and then spraying the single-walled carbon nanotube solution on the glass substrate 1 to prepare a single-walled carbon nanotube film 301 as shown in figure 4; further adopting high work function metal Pd to contact with the carbon nano tube film 301 to prepare a p-type transistor 302, and adopting low work function metal Sc to contact with the carbon nano tube film 301 to prepare an n-type transistor 303; further connecting the p-type and n-type transistors constitutes the entire carbon nanotube CMOS signal control circuit 3, as shown in fig. 5. Further according to step C, a layer of silicon oxide is grown on the surface of the carbon nanotube CMOS signal control circuit 3 as an insulating layer 304 to protect the carbon nanotube CMOS signal control circuit (3), as shown in fig. 6. Further according to step D, a pixel array region 2 including an array of display driving TFTs and an array of pixels is prepared on the surface of the insulating layer 304, and the preparation of the display panel is completed, as shown in fig. 8.
Example 3:
the embodiment provides a display panel, which comprises a substrate 1, a pixel array area 2 and a signal control circuit chip 3, wherein the signal control circuit chip 3 is a carbon-based CMOS signal control chip, the signal control circuit chip 3 is attached to the pixel array area 2 without a lead, and the signal control circuit chip 3 and the pixel array area 2 are integrated on the substrate 1. As shown in fig. 1, the signal control circuit chip 3 is located at the periphery of the pixel array region 2, and the frame width of the formed display panel reaches the order of the pixel pitch. The signal control circuit chip 3 is a carbon-based CMOS signal control chip consisting of p-type and n-type transistors which adopt carbon nanowires as channel materials, wherein the p-type transistor is made by contacting metal Pt with the carbon nanowires, and the n-type transistor is made by contacting metal Al with the carbon nanowires. The pixel array region 2 is composed of a display driving TFT array and a pixel array, wherein the display driving TFT is an oxide semiconductor TFT, and the pixel array is a liquid crystal.
Fig. 3 is a schematic view showing a manufacturing process of a display panel according to the present invention, fig. 4-7 specifically show specific steps of manufacturing the display panel according to the present invention, and a detailed description will be given below of a specific embodiment of the present invention according to the steps shown in fig. 4-7.
According to the step A, preparing the carbon nanowire by adopting a glow discharge method, and then preparing a carbon nanowire film 301 on the glass substrate 1 by dip-coating the carbon nanowire solution, as shown in FIG. 4; further according to the step B, patterning the carbon nanowire film 301 by adopting a photoetching process; further, a high work function metal Pt is contacted with the carbon nanowire film 301 to prepare a p-type transistor 302, and a low work function metal Al is contacted with the carbon nanowire film 301 to prepare an n-type transistor 303, as shown in FIG. 5; the p-type and n-type transistors are further connected to form the whole carbon nanowire CMOS signal control circuit 3. Further according to the step C, a layer of silicon nitride is grown on the surface of the carbon nanowire CMOS signal control circuit 3 as an insulating layer 304 to protect the carbon nanowire CMOS signal control circuit 3, as shown in fig. 6. Further according to step D, a pixel array region 2 including the display driving TFT array and the pixel array is prepared in the central region of the surface of the insulating layer 304, so that the pixel array region 2 is located at the middle position surrounded by the carbon nanowire CMOS signal control circuit 3, and the preparation of the display panel is completed, as shown in fig. 7.
Example 4:
the embodiment provides a frameless display panel, which comprises a substrate 1, a pixel array region 2 and a signal control circuit chip 3, wherein the signal control circuit chip 3 is a carbon-based CMOS signal control chip, the signal control circuit chip 3 is attached to the pixel array region 2 without a lead wire, and is integrated with the pixel array region 2 on the substrate 1, as shown in fig. 2, the signal control circuit chip 3 is located at a lower layer of the pixel array region 2, so that the formed display panel is frameless, the signal control circuit chip 3 is a carbon-based CMOS signal control chip composed of p-type and n-type transistors using carbon nanofibers as channel materials, wherein the p-type transistor is made by contacting metal Ni with carbon nanofibers, the n-type transistor is made by contacting metal Al with carbon nanofibers, the pixel array region 2 is composed of a display driving TFT array and a pixel array, wherein the display driving TFT is a carbon nanotube TFT, and the pixel array is micro-L ED.
Fig. 3 shows a schematic diagram of manufacturing a display panel according to the present invention, fig. 4-6 and 8 show specific steps of manufacturing a display panel according to the present invention, and a detailed description will be given below of a specific embodiment of the present invention according to the steps shown in fig. 4-6 and 8.
Preparing carbon nanoball according to the step a by using a laser ablation method, and then transferring the carbon nanoball solution to the glass substrate 1 to prepare a carbon nanoball film 301 as shown in fig. 4; further adopting high work function metal Au to contact with the carbon nanosphere film 301 to prepare a p-type transistor 302, and adopting low work function metal Sc to contact with the carbon nanosphere film 301 to prepare an n-type transistor 303; the p-type and n-type transistors are further connected to form the whole carbon nanoball CMOS signal control circuit 3, as shown in FIG. 5. Further according to the step C, a layer of silicon oxide is grown on the surface of the carbon nanoball CMOS signal control circuit 3 as an insulating layer 304 to protect the carbon nanoball CMOS signal control circuit (3), as shown in fig. 6. Further according to step D, a pixel array region 2 including an array of display driving TFTs and an array of pixels is prepared on the surface of the insulating layer 304, and the preparation of the display panel is completed, as shown in fig. 8.
Example 5:
the embodiment provides a display panel, which comprises a substrate 1, a pixel array area 2 and a signal control circuit chip 3, wherein the signal control circuit chip 3 is a carbon-based CMOS signal control chip, the signal control circuit chip 3 is attached to the pixel array area 2 without a lead, and the signal control circuit chip 3 and the pixel array area 2 are integrated on the substrate 1. As shown in fig. 1, the signal control circuit chip 3 is located at the periphery of the pixel array region 2, and the frame width of the formed display panel reaches the order of the pixel pitch. The signal control circuit chip 3 is a carbon-based CMOS signal control chip consisting of p-type and n-type transistors which adopt graphene as channel materials, wherein the p-type transistor is made by contacting metal Pd with the graphene, and the n-type transistor is made by contacting metal Sc with the graphene. The pixel array region 2 is composed of a display driving TFT array and a pixel array, wherein the display driving TFT is an oxide semiconductor TFT, and the pixel array is a liquid crystal.
Fig. 3 shows a schematic diagram of manufacturing a display panel according to the present invention, fig. 4-7 specifically show specific steps of manufacturing a display panel according to the present invention, and a detailed description of a specific embodiment of the present invention will be made according to the steps shown in fig. 4-7.
According to the step A, preparing graphene by adopting a chemical vapor deposition method, and then preparing a graphene film 301 on the glass substrate 1 by dip-coating the graphene solution, as shown in FIG. 4; further according to the step B, patterning the graphene film 301 by adopting a photoetching process; further adopting high work function metal Pd to contact with the carbon nanowire film 301 to prepare a p-type transistor 302, and adopting low work function metal Sc to contact with the graphene film 301 to prepare an n-type transistor 303; further connecting the p-type and n-type transistors constitutes the entire graphene CMOS signal control circuit 3, as shown in fig. 5. Further according to the step C, a layer of silicon nitride is grown on the surface of the graphene CMOS signal control circuit 3 as an insulating layer 304 to protect the graphene CMOS signal control circuit 3, as shown in fig. 6. Further according to step D, a pixel array region 2 including a display driving TFT array and a pixel array is prepared in the central region of the surface of the insulating layer 304, so that the pixel array region 2 is located at the middle position surrounded by the graphene CMOS signal control circuit 3, thereby completing the preparation of the display panel, as shown in fig. 8.
Although the invention has been described in detail hereinabove with respect to specific embodiments thereof, it will be apparent to those skilled in the art that modifications and improvements can be made thereto without departing from the scope of the invention. Accordingly, such modifications and improvements are intended to be within the scope of the invention as claimed.
Claims (10)
1. A display panel includes a substrate (1), a pixel array region (2) and a signal control circuit chip (3), characterized in that:
the signal control circuit chip (3) is a carbon-based CMOS signal control chip, the signal control circuit chip (3) is attached to the pixel array region (2) in a leadless mode, and integrated with the pixel array region (2) on the substrate (1), and the signal control circuit chip (3) is located on the periphery of the pixel array region (2) or on the lower layer of the pixel array region (2).
2. The display panel of claim 1, wherein: the signal control circuit chip (3) is formed by connecting a p-type transistor (302) and an n-type transistor (303) which adopt carbon nano materials as channel materials.
3. The display panel of claim 2, wherein: the carbon nano material comprises carbon nano tubes, carbon nano wires, graphene, fullerene, carbon nano fibers, carbon nano spheres and the like, wherein the carbon nano tubes comprise single-walled carbon nano tubes and multi-walled carbon nano tubes.
4. The display panel of claim 1, wherein:
the p-type transistor (302) is made of a high work function metal selected from the group consisting of Pd, Pt, Ni, Au in contact with the carbon nanomaterial;
the n-type transistor (303) is made of a low work function metal selected from Sc and Al in contact with the carbon nanomaterial.
5. The display panel according to claim 1, wherein the pixel array region (2) is composed of a display driving TFT array selected from an amorphous silicon TFT, a low temperature polysilicon TFT, an oxide semiconductor TFT and a carbon nanotube TFT, and a pixel array (2) selected from O L ED, liquid crystal and micro-L ED.
6. A method of manufacturing a display panel according to claims 1-5, comprising the steps of:
step A: preparing a carbon nano material film (301) on a substrate (1);
and B: patterning the carbon nanomaterial film (301) by using a photoetching process; further fabricating a p-type transistor (302) and an n-type transistor (303) on the carbon nanomaterial thin film (301); connecting the p-type transistor (302) and the n-type transistor (302) to form a carbon-based CMOS signal control chip (3);
and C: an insulating layer (304) grows on the surface of the carbon-based CMOS signal control chip (3) to protect the carbon-based CMOS signal control chip (3);
step D: and preparing a pixel array area (2) comprising a display driving TFT array and a pixel array in the central area of the surface of the insulating layer (304), and finishing the preparation of the display panel.
7. The method of manufacturing a display panel according to claim 6, wherein: the carbon nano material film (301) in the step A comprises carbon nano tubes, carbon nano wires, graphene, fullerene, carbon nano fibers or carbon nano spheres, wherein the carbon nano tubes comprise single-wall carbon nano tubes and multi-wall carbon nano tubes.
8. The method of manufacturing a display panel according to claim 7, wherein: the carbon nanomaterial film (301) is prepared by an arc discharge method, a laser ablation method, a chemical vapor deposition method, a solid phase pyrolysis method, a glow discharge method, a gas combustion method or a polymerization synthesis method, and is formed by spraying, dip-coating and transferring a carbon nanomaterial solution.
9. The method of manufacturing a display panel according to claim 6, wherein: in the step B and the step C, the carbon-based CMOS signal control chip (3) is formed on the periphery of the pixel array area (2) or on the lower layer of the pixel array area (2).
10. The method of manufacturing a display panel according to claim 6, wherein:
in the step B, the p-type transistor (302) is made of high work function metal in contact with the carbon nano material film (301), and the high work function metal is selected from Pd, Pt, Ni and Au;
the n-type transistor (302) is made of a low work function metal selected from Sc and Al in contact with the carbon nanomaterial.
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