CN111490064B - Display panel and manufacturing method thereof - Google Patents

Display panel and manufacturing method thereof Download PDF

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Publication number
CN111490064B
CN111490064B CN202010282108.XA CN202010282108A CN111490064B CN 111490064 B CN111490064 B CN 111490064B CN 202010282108 A CN202010282108 A CN 202010282108A CN 111490064 B CN111490064 B CN 111490064B
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carbon
signal control
pixel array
control circuit
display panel
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CN111490064A (en
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梁学磊
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Beijing Yuanxin Carbon Based Integrated Circuit Research Institute
Peking University
Beijing Hua Tan Yuan Xin Electronics Technology Co Ltd
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Beijing Yuanxin Carbon Based Integrated Circuit Research Institute
Peking University
Beijing Hua Tan Yuan Xin Electronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes

Abstract

The invention discloses a display panel and a manufacturing method thereof, wherein the display panel comprises a substrate, a pixel array area and a signal control circuit, wherein the signal control circuit chip is a carbon-based CMOS chip, can be positioned at the periphery or the lower layer of the pixel array area, is attached to the pixel array area without a lead wire, and is integrated with the pixel array area on the substrate 1; the width of the display panel bezel may be on the order of the pixel pitch or zero. Meanwhile, a manufacturing method of the display panel is also provided, wherein a carbon nanomaterial film is firstly prepared on a substrate, then a p-type transistor and an n-type transistor are prepared on the carbon nanomaterial film and are connected to form a carbon nanomaterial CMOS signal control circuit, an insulating layer is then grown on the surface of the carbon nanomaterial CMOS signal control circuit, and finally a display driving TFT array circuit and a pixel array are prepared on the insulating layer, so that the manufacturing of the display panel is completed. The display panel provided by the invention avoids the attachment of a signal control chip in the production of a common display panel, and can also realize the screen splicing of pixel interval levels.

Description

Display panel and manufacturing method thereof
Technical Field
The invention relates to the technical field of display, in particular to a display panel containing a carbon-based CMOS chip and a manufacturing method thereof.
Background
In the conventional flat panel display manufacturing process, a bonding signal control IC (Integrated Circuit) chip is required around the pixel array, which results in a display panel having a size larger than that of the pixel area, and a frame area where no pixels are displayed is present. Because of the need of the lead bonding signal control IC chip, a certain frame area is necessarily present around the image display area of the flat panel display. Narrow borders are a development requirement and trend of flat panel displays. Although the width of the frame is becoming narrower as technology advances, the frame is always present because the signal control IC chip must be wire bonded.
In the existing flat panel display technology, pixels in a display screen are in an array distribution form, and each row or column is connected with a signal control lead. The signal control leads are arranged around the periphery of the pixel region in a gathered manner and are attached to an IC chip for controlling the display state of each pixel unit. These signal control IC chips are typically fabricated using silicon-based integrated circuit technology. The signal control IC chip prepared by the silicon-based integrated circuit technology is because the transistor (TFT) for controlling the pixel array has different performance requirements for the transistor from the image signal control chip, and the high-speed processing requirement of the image signal has higher requirements for the performance of the corresponding circuit/transistor. Although the manufacture process of the flat panel display also comprises the preparation of transistors (a driving TFT array in a display backboard), the performance of the TFTs prepared in the way can only meet the control of the display state of pixels and cannot meet the processing requirement of row-column scanning control signals. That is, the inability of the fabrication process of the signal control IC chip to be compatible with the fabrication process of the display driving TFT array results in the necessity of bonding the silicon-based IC chip to the peripheral leads of the pixel array, and thus the presence of the screen frame becomes necessary. Although the width and thickness of the signal control IC chip can be made small, such as a typical signal control IC chip having a width of 1-2mm and a thickness of about 1mm, the frame continues to be difficult to reduce due to the limitations.
The presence of a bezel is an important issue that must be considered for the design and application of the display product, particularly in tiled screens. Usually, the oversized display screen is formed by splicing smaller-sized screens, and the width of the frame of the screen is critical to the display effect of the spliced screen. The narrower the frame, the better the display effect of the spliced screen.
However, at present, the control signals are all realized by bonding silicon-based chips around the pixel array through leads, and no production scheme for directly manufacturing the signal control chips on the back plate exists.
The signal control IC chip used in the existing flat panel display manufacturing process generally adopts silicon-based CMOS (complementary metal oxide semiconductor ) technology, that is, a large number of microelectronic components (transistors, resistors, capacitors, etc.) are integrated on a silicon wafer and an integrated circuit is formed. It is this silicon-based CMOS technology that results in a signal control IC chip fabrication process that is not compatible with the fabrication process of the display driver TFT array. The carbon-based CMOS technology is an emerging integrated circuit preparation technology, generally adopts semiconductor carbon nanotubes, carbon nanowires and the like as channel materials, and contacts the carbon nanotubes and the carbon nanowires through electrodes with different work functions to obtain p-type and n-type transistors, and constructs a CMOS circuit. Because the carbon nano tube material has excellent mechanical flexibility and light transmittance, the flexible transparent high-performance CMOS integrated circuit can be prepared. The carbon-based CMOS integrated circuit can be prepared at a low temperature, and due to the excellent electrical characteristics of the carbon nanotube material, the carbon-based CMOS integrated circuit has higher speed, lower power consumption and smaller size, and the performance of the carbon-based CMOS integrated circuit is far higher than that of a silicon-based transistor with the same technology node, so that the TFT for controlling the pixel array and the CMOS control circuit for controlling the display image signal can be prepared on the display backboard glass by adopting the carbon nanotube material through a low-temperature preparation process, namely the carbon-based CMOS technology and the display driving TFT technology have processing compatibility.
Currently, there is no case in the prior art that a carbon-based CMOS technology is used to fabricate a display panel.
Disclosure of Invention
Aiming at the problems in the prior art, the invention aims to solve the technical problems of avoiding the lamination of signal control chips in the production of a common display panel and realizing the screen splicing of the pixel interval level. The invention aims to provide the novel display panel and a preparation method thereof.
In one aspect, the present invention provides a display panel, including a substrate, a pixel array area, and a signal control circuit chip, wherein: the signal control circuit chip (3) is a carbon-based CMOS signal control chip, and no lead wire is attached between the signal control circuit chip (3) and the pixel array area (2) and is integrated with the pixel array area (2) on the substrate (1).
Preferably, the signal control circuit chip (3) is located at the periphery of the pixel array area (2) or at the lower layer of the pixel array area (2).
Preferably, the signal control circuit chip (3) is formed by connecting a p-type transistor (302) and an n-type transistor (303) which adopt carbon nano materials as channel materials.
Preferably, the carbon nanomaterial comprises carbon nanotubes, carbon nanowires, graphene, fullerenes, carbon nanofibers, carbon nanospheres, and the like, wherein the carbon nanotubes comprise single-walled, multi-walled carbon nanotubes.
Preferably, the p-type transistor (302) is made of a high work function metal in contact with the carbon nanomaterial, the high work function metal being selected from Pd, pt, ni, au;
the n-type transistor (303) is made of a low work function metal selected from Sc, al in contact with the carbon nanomaterial.
Preferably, the pixel array region (2) is composed of a display driving TFT array and a pixel array.
Preferably, the display driving TFT is selected from an amorphous silicon TFT, a low temperature polysilicon TFT, an oxide semiconductor TFT, and a carbon nanotube TFT; the pixel array (2) is selected from the group consisting of an OLED, a liquid crystal and a micro-LED.
In another aspect, the present invention provides a method for manufacturing the display panel, which is characterized by comprising the following steps:
step A: preparing a carbon nanomaterial film (301) on a substrate (1);
and (B) step (B): patterning the carbon nanomaterial film (301) using a photolithography process; further preparing a p-type transistor (302) and an n-type transistor (303) on the carbon nanomaterial thin film (301); -connecting the p-type transistor (302) and the n-type transistor (302) to form a carbon-based CMOS signal control chip (3);
step C: growing an insulating layer (304) on the surface of the carbon-based CMOS signal control chip (3) to protect the carbon-based CMOS signal control chip (3);
step D: and preparing a pixel array region (2) comprising a display driving TFT array and a pixel array in the central area of the surface of the insulating layer (304) to complete the preparation of the display panel.
Preferably, the carbon nanomaterial film (301) in step a comprises carbon nanotubes, carbon nanowires, graphene, fullerenes, carbon nanofibers, or carbon nanospheres, wherein the carbon nanotubes comprise single-walled, multi-walled carbon nanotubes.
Preferably, the carbon nanomaterial film (301) is manufactured by an arc discharge method, a laser ablation method, a chemical vapor deposition method, a solid phase pyrolysis method, a glow discharge method, a gas combustion method, or a polymerization synthesis method.
Preferably, the carbon nanomaterial film (301) in step a is formed by spraying, dip-coating, and transferring a carbon nanomaterial solution.
Preferably, the carbon-based CMOS signal control chip (3) in step B, step C is formed at the periphery of the pixel array area (2) or at the lower layer of the pixel array area (2).
Preferably, the method comprises the steps of,
the p-type transistor (302) in the step B is made of a high work function metal in contact with the carbon nanomaterial film (301), wherein the high work function metal is selected from Pd, pt, ni, au;
the n-type transistor (302) is made of a low work function metal in contact with the carbon nanomaterial, the low work function metal being selected from Sc, al.
Preferably, the insulating layer (304) in step C is silicon oxide or silicon nitride.
Preferably, the display driving TFT in the step D is selected from amorphous silicon TFT, low temperature polysilicon TFT, oxide semiconductor TFT, and carbon nanotube TFT; the pixel array is selected from the group consisting of OLED, liquid crystal, micro-LED, and the like.
The invention has the beneficial effects that: the invention adopts the carbon-based CMOS technology to directly prepare the pixel signal control circuit on the display substrate, and can prepare the signal control circuit chip around the pixel array or below the pixel array, thereby effectively reducing the frame width. Especially, the chip is prepared below the pixel array, so that the width of the frame can reach the magnitude of the pixel spacing, and the screen splicing of the pixel spacing level can be realized. If the signal control circuit chip and the driving TFT are both made of carbon nanomaterial, an all-carbon-based driving display panel can be realized.
The carbon-based CMOS signal control circuit and the all-carbon-based driven display panel technology provided by the invention can be used for various display products, such as flexible display panels, transparent display panels and LCD,
OLED, micro-LED, etc.
Drawings
The display panel and the manufacturing method thereof of the present invention are described below with reference to the accompanying drawings
The above and other objects, features and advantages of the present invention will become more apparent as the description proceeds, and the accompanying drawings, in which:
fig. 1 is a schematic diagram of a display panel structure of a signal control circuit chip on a pixel array side. Wherein 2 is a pixel array region including a display driving TFT array and OLED pixels, and 3 is a signal control circuit chip including carbon nanomaterial transistors.
Fig. 2 is a schematic diagram of a display panel structure of a signal control circuit chip under a pixel array. Wherein 1 is a display screen substrate, 2 is a pixel array region including a display driving TFT array and OLED pixels, and 3 is a signal control circuit chip including carbon nanomaterial transistors.
Fig. 3 is a schematic diagram of a display panel manufacturing process.
Fig. 4 is a schematic structural diagram of the carbon nanotube film 301 after being prepared on a display substrate.
Fig. 5 is a schematic structural diagram of the carbon nanomaterial film 301 after preparing the Cheng Tanji CMOS signal control chip 3.
Fig. 6 is a schematic diagram of the structure after the insulating layer 304 is grown on the surface of the carbon-based CMOS signal control chip 3.
Fig. 7 is a schematic structural diagram of a display panel completed after the pixel array region 2 is prepared in the central area of the surface of the insulating layer 304, and the carbon-based CMOS signal control chip 3 is located at the periphery of the pixel array region 2.
Fig. 8 is a schematic structural diagram of a display panel completed after the pixel array region 2 is prepared on the surface of the insulating layer 304, and the carbon-based CMOS signal control chip 3 is located at the lower layer of the pixel array region 2.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. In the drawings, like elements are denoted by like reference numerals, and various parts thereof are not drawn to scale. Furthermore, some well-known portions may not be shown. The semiconductor structure obtained after several steps may be depicted in one figure for simplicity.
It will be understood that when a layer, an area, or a structure of a device is described as being "on" or "over" another layer, another area, it can be referred to as being directly on the other layer, another area, or further layers or areas can be included between the other layer, another area, etc. And if the device is flipped, the one layer, one region, will be "under" or "beneath" the other layer, another region.
If, for the purposes of describing a situation directly on top of another layer, another region, the expression "a directly on top of B" or "a directly on top of B and adjoining it" will be used herein. In this application, "a is directly in B" means that a is in B and a is directly adjacent to B, rather than a being in the doped region formed in B.
Example 1:
the embodiment provides a display panel, which comprises a substrate 1, a pixel array area 2 and a signal control circuit chip 3, wherein the signal control circuit chip 3 is a carbon-based CMOS signal control chip, and no lead wire is attached between the signal control circuit chip 3 and the pixel array area 2 and is integrated with the pixel array area 2 on the substrate 1. As shown in fig. 1, the signal control circuit chip 3 is located at the periphery of the pixel array area 2, and the frame width of the formed display panel reaches the order of the pixel pitch. The signal control circuit chip 3 is a carbon-based CMOS signal control chip formed by a p-type transistor and an n-type transistor which adopt single-wall carbon nanotubes as channel materials, wherein the p-type transistor is made of metal Pd and single-wall carbon nanotubes, and the n-type transistor is made of metal Sc and single-wall carbon nanotubes. The pixel array region 2 is composed of a display driving TFT array and a pixel array, wherein the display driving TFT is an amorphous silicon TFT, and the pixel array is an OLED.
Fig. 3 shows a schematic view of manufacturing a display panel according to the present invention, fig. 4 to 7 show specific steps of manufacturing the display panel according to the present invention, and detailed descriptions of specific embodiments of the present invention are described below according to the steps shown in fig. 4 to 7.
According to the step A, preparing a single-walled carbon nanotube by adopting an arc discharge method, and then spraying the single-walled carbon nanotube solution on a glass substrate 1 to prepare a single-walled carbon nanotube film 301, as shown in FIG. 4; further according to step B, patterning the carbon nanotube film 301 using a photolithography process; further, a p-type transistor 302 is prepared by contacting a high work function metal Pd with the carbon nanotube film 301, and an n-type transistor 303 is prepared by contacting a low work function metal Sc with the carbon nanotube film 301; further connecting p-type and n-type transistors constitutes the whole carbon nanotube CMOS signal control circuit 3, as shown in fig. 5. Further according to step C, a layer of silicon oxide is grown on the surface of the CMOS signal control circuit 3 as an insulating layer 304 to protect the CMOS signal control circuit 3, as shown in fig. 6. Further according to step D, a pixel array region 2 including a display driving TFT array and a pixel array is prepared in the central area of the surface of the insulating layer 304, so that the pixel array region 2 is located at the middle position surrounded by the carbon nanotube CMOS signal control circuit 3, thereby completing the preparation of the display panel, as shown in fig. 7.
Example 2:
the embodiment provides a display panel without a frame, which comprises a substrate 1, a pixel array area 2 and a signal control circuit chip 3, wherein the signal control circuit chip 3 is a carbon-based CMOS signal control chip, and the signal control circuit chip 3 and the pixel array area 2 are attached without leads and are integrated with the pixel array area 2 on the substrate 1. As shown in fig. 2, the signal control circuit chip 3 is located at the lower layer of the pixel array area 2, and the formed display panel has no frame. The signal control circuit chip 3 is a carbon-based CMOS signal control chip formed by a p-type transistor and an n-type transistor which adopt single-wall carbon nanotubes as channel materials, wherein the p-type transistor is made of metal Pd and single-wall carbon nanotubes, and the n-type transistor is made of metal Sc and single-wall carbon nanotubes. The pixel array region 2 is composed of a display driving TFT array and a pixel array, wherein the display driving TFT is an amorphous silicon TFT, and the pixel array is an OLED.
Fig. 3 is a schematic view showing a manufacturing process of a display panel according to the present invention, fig. 4 to 6, fig. 8 is a schematic view showing specific steps of manufacturing a display panel according to the present invention, and a detailed description is given below of specific embodiments of the present invention according to the steps shown in fig. 4 to 6 and fig. 8.
According to the step A, preparing a single-walled carbon nanotube by adopting an arc discharge method, and then spraying the single-walled carbon nanotube solution on a glass substrate 1 to prepare a single-walled carbon nanotube film 301, as shown in FIG. 4; further, a p-type transistor 302 is prepared by contacting a high work function metal Pd with the carbon nanotube film 301, and an n-type transistor 303 is prepared by contacting a low work function metal Sc with the carbon nanotube film 301; further connecting p-type and n-type transistors constitutes the whole carbon nanotube CMOS signal control circuit 3, as shown in fig. 5. Further according to step C, a layer of silicon oxide is grown on the surface of the CMOS signal control circuit 3 as an insulating layer 304 to protect the CMOS signal control circuit 3, as shown in fig. 6. Further according to step D, a pixel array region 2 including a display driving TFT array, a pixel array is prepared on the surface of the insulating layer 304, and the preparation of the display panel is completed as shown in fig. 8.
Example 3:
the embodiment provides a display panel, which comprises a substrate 1, a pixel array area 2 and a signal control circuit chip 3, wherein the signal control circuit chip 3 is a carbon-based CMOS signal control chip, and no lead wire is attached between the signal control circuit chip 3 and the pixel array area 2 and is integrated with the pixel array area 2 on the substrate 1. As shown in fig. 1, the signal control circuit chip 3 is located at the periphery of the pixel array area 2, and the frame width of the formed display panel reaches the order of the pixel pitch. The signal control circuit chip 3 is a carbon-based CMOS signal control chip formed by a p-type transistor and an n-type transistor which adopt carbon nanowires as channel materials, wherein the p-type transistor is formed by contacting metal Pt with the carbon nanowires, and the n-type transistor is formed by contacting metal Al with the carbon nanowires. The pixel array region 2 is composed of a display driving TFT array and a pixel array, wherein the display driving TFT is an oxide semiconductor TFT, and the pixel array is a liquid crystal.
Fig. 3 is a schematic view showing a manufacturing flow of a display panel according to the present invention, fig. 4 to 7 are specific steps of manufacturing the display panel according to the present invention, and a detailed description of a specific embodiment of the present invention will be given below with reference to the steps shown in fig. 4 to 7.
According to the step A, a glow discharge method is adopted to prepare a carbon nanowire, and then the carbon nanowire solution is subjected to dip coating to prepare a carbon nanowire film 301 on a glass substrate 1, as shown in FIG. 4; further according to step B, patterning the carbon nanowire film 301 using a photolithography process; further, a p-type transistor 302 is prepared by contacting a high work function metal Pt with the carbon nanowire film 301, and an n-type transistor 303 is prepared by contacting a low work function metal Al with the carbon nanowire film 301, as shown in FIG. 5; further connecting p-type and n-type transistors constitutes the whole carbon nanowire CMOS signal control circuit 3. Further according to step C, a layer of silicon nitride is grown on the surface of the carbon nanowire CMOS signal control circuit 3 as an insulating layer 304, so as to protect the carbon nanowire CMOS signal control circuit 3, as shown in fig. 6. Further according to step D, a pixel array region 2 including a display driving TFT array and a pixel array is prepared in the central area of the surface of the insulating layer 304, so that the pixel array region 2 is located at the middle position surrounded by the carbon nanowire CMOS signal control circuit 3, thereby completing the preparation of the display panel, as shown in fig. 7.
Example 4:
the embodiment provides a display panel without a frame, which comprises a substrate 1, a pixel array area 2 and a signal control circuit chip 3, wherein the signal control circuit chip 3 is a carbon-based CMOS signal control chip, and the signal control circuit chip 3 and the pixel array area 2 are attached without leads and are integrated with the pixel array area 2 on the substrate 1. As shown in fig. 2, the signal control circuit chip 3 is located at the lower layer of the pixel array area 2, and the formed display panel has no frame. The signal control circuit chip 3 is a carbon-based CMOS signal control chip formed by a p-type transistor and an n-type transistor which adopt carbon nanofibers as channel materials, wherein the p-type transistor is made of metal Ni which is contacted with the carbon nanofibers, and the n-type transistor is made of metal Al which is contacted with the carbon nanofibers. The pixel array region 2 is composed of a display driving TFT array and a pixel array, wherein the display driving TFT is a carbon nanotube TFT, and the pixel array is a micro-LED.
Fig. 3 shows a schematic view of manufacturing a display panel according to the present invention, fig. 4-6 and 8 show specific steps of manufacturing a display panel according to the present invention, and a detailed description of specific embodiments of the present invention will be given below with reference to the steps shown in fig. 4-6 and 8.
According to the step A, preparing carbon nanospheres by a laser ablation method, and transferring the carbon nanosphere solution onto a glass substrate 1 to prepare a carbon nanosphere film 301, as shown in FIG. 4; further adopting high work function metal Au to contact the carbon nanosphere film 301 to prepare a p-type transistor 302, and adopting low work function metal Sc to contact the carbon nanosphere film 301 to prepare an n-type transistor 303; further connecting p-type and n-type transistors forms the whole carbon nanosphere CMOS signal control circuit 3, as shown in FIG. 5. Further according to step C, a layer of silicon oxide is grown on the surface of the carbon nanosphere CMOS signal control circuit 3 as an insulating layer 304 to protect the carbon nanosphere CMOS signal control circuit (3), as shown in fig. 6. Further according to step D, a pixel array region 2 including a display driving TFT array, a pixel array is prepared on the surface of the insulating layer 304, and the preparation of the display panel is completed as shown in fig. 8.
Example 5:
the embodiment provides a display panel, which comprises a substrate 1, a pixel array area 2 and a signal control circuit chip 3, wherein the signal control circuit chip 3 is a carbon-based CMOS signal control chip, and no lead wire is attached between the signal control circuit chip 3 and the pixel array area 2 and is integrated with the pixel array area 2 on the substrate 1. As shown in fig. 1, the signal control circuit chip 3 is located at the periphery of the pixel array area 2, and the frame width of the formed display panel reaches the order of the pixel pitch. The signal control circuit chip 3 is a carbon-based CMOS signal control chip composed of a p-type transistor and an n-type transistor which adopt graphene as channel materials, wherein the p-type transistor is made of metal Pd and graphene in contact, and the n-type transistor is made of metal Sc and graphene in contact. The pixel array region 2 is composed of a display driving TFT array and a pixel array, wherein the display driving TFT is an oxide semiconductor TFT, and the pixel array is a liquid crystal.
Fig. 3 is a schematic view illustrating fabrication of a display panel according to the present invention, fig. 4 to 7 are specific steps for fabricating the display panel according to the present invention, and detailed descriptions of specific embodiments of the present invention are provided below according to the steps shown in fig. 4 to 7.
According to the step A, preparing graphene by adopting a chemical vapor deposition method, and then preparing a graphene film 301 on a glass substrate 1 by dip-coating the graphene solution, as shown in FIG. 4; further according to step B, patterning the graphene film 301 using a photolithography process; further adopting high work function metal Pd to contact with the carbon nanowire film 301 to prepare a p-type transistor 302, and adopting low work function metal Sc to contact with the graphene film 301 to prepare an n-type transistor 303; further connecting p-type and n-type transistors constitutes the whole graphene CMOS signal control circuit 3, as shown in fig. 5. According to step C, a layer of silicon nitride is grown on the surface of the graphene CMOS signal control circuit 3 as an insulating layer 304, so as to protect the graphene CMOS signal control circuit 3, as shown in fig. 6. Further according to step D, a pixel array region 2 including a display driving TFT array and a pixel array is prepared in the central area of the surface of the insulating layer 304, so that the pixel array region 2 is located at the middle position surrounded by the graphene CMOS signal control circuit 3, and the preparation of the display panel is completed, as shown in fig. 8.
While the invention has been described in detail in the general context and with reference to specific embodiments thereof, it will be apparent to one skilled in the art that modifications and improvements can be made thereto. Accordingly, such modifications or improvements may be made without departing from the spirit of the invention and are intended to be within the scope of the invention as claimed.

Claims (10)

1. The utility model provides a display panel, includes base plate (1), pixel array district (2) and signal control circuit chip (3), its characterized in that:
the signal control circuit chip (3) is a carbon-based CMOS signal control chip, no lead is attached between the signal control circuit chip (3) and the pixel array area (2), the signal control circuit chip and the pixel array area (2) are integrated on the substrate (1), and the signal control circuit chip (3) is positioned at the lower layer of the pixel array area (2); the signal control circuit chip (3) is formed by connecting a p-type transistor (302) and an n-type transistor (303) which adopt carbon nano materials as channel materials; the p-type transistor (302) is made of a high work function metal in contact with the carbon nanomaterial, the high work function metal being selected from Pd, pt, ni, au; the n-type transistor (303) is made of a low work function metal selected from Sc, al in contact with the carbon nanomaterial.
2. The display panel of claim 1, wherein: the carbon nanomaterial comprises a carbon nanotube, a carbon nanowire, graphene, fullerene, carbon nanofiber or carbon nanosphere.
3. The display panel of claim 2, wherein: the carbon nanotubes include single-walled or multi-walled carbon nanotubes.
4. The display panel of claim 1, wherein: the projection of the pixel array area (2) on the plane where the signal control circuit chip (3) is located at the middle position surrounded by the signal control circuit chip (3).
5. The display panel of claim 1, wherein: the pixel array region (2) is composed of a display driving TFT array and a pixel array, wherein the display driving TFT is selected from amorphous silicon TFT, low-temperature polysilicon TFT, oxide semiconductor TFT and carbon nanotube TFT; the pixel array is selected from the group consisting of an OLED, a liquid crystal, and a micro-LED.
6. A method of making a display panel according to any one of claims 1-5, comprising the steps of:
step A: preparing a carbon nanomaterial film (301) on a substrate (1);
and (B) step (B): patterning the carbon nanomaterial film (301) using a photolithography process; further preparing a p-type transistor (302) and an n-type transistor (303) on the carbon nanomaterial thin film (301); -connecting the p-type transistor (302) and the n-type transistor (303) to form a carbon-based CMOS signal control circuit chip (3);
step C: an insulating layer (304) grows on the surface of the signal control circuit chip (3) to protect the signal control circuit chip (3);
step D: and preparing a pixel array region (2) comprising a display driving TFT array and a pixel array in the central area of the surface of the insulating layer (304) to complete the preparation of the display panel.
7. The method of claim 6, wherein: the carbon nanomaterial film (301) in step a includes carbon nanotubes, carbon nanowires, graphene, fullerenes, carbon nanofibers, or carbon nanospheres.
8. The method of claim 7, wherein the carbon nanotubes comprise single-walled or multi-walled carbon nanotubes.
9. The method of claim 7, wherein: the carbon nanomaterial film (301) is produced by an arc discharge method, a laser ablation method, a chemical vapor deposition method, a solid phase pyrolysis method, a glow discharge method, a gas combustion method, or a polymerization synthesis method, and is formed by spraying, dip-coating, and transferring a carbon nanomaterial solution.
10. The method of claim 6, wherein: and B, in the step C, the signal control circuit chip (3) is formed at the periphery of the pixel array area (2), so that the projection of the pixel array area (2) on the plane where the signal control circuit chip (3) is located is positioned at the middle position surrounded by the signal control circuit chip (3).
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