CN107623023A - A kind of OLED display panel and preparation method thereof, OLED display - Google Patents
A kind of OLED display panel and preparation method thereof, OLED display Download PDFInfo
- Publication number
- CN107623023A CN107623023A CN201710964495.3A CN201710964495A CN107623023A CN 107623023 A CN107623023 A CN 107623023A CN 201710964495 A CN201710964495 A CN 201710964495A CN 107623023 A CN107623023 A CN 107623023A
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- goa circuits
- oled display
- insulating barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
The present invention provides a kind of OLED display panel and preparation method thereof, OLED display, by the side that GOA circuits are arranged on to tft array adjacent substrate layer, insulating barrier is set between GOA circuits and tft array, and the first via through insulating barrier is formed on the insulating layer, so that the metal lead wire of GOA circuits and tft array is connected by the first via, so, GOA circuits can be overlapping with part AA regions, so as to realize narrow frame, on the premise of panel size is certain, the corresponding area for increasing AA regions.
Description
Technical field
The present invention relates to display technology field, and in particular to a kind of OLED display panel and preparation method thereof, OLED are shown
Device.
Background technology
OLED (Organic Light-Emitting Diode, Organic Light Emitting Diode) devices are consolidated entirely due to what it had
The series of advantages such as state structure, high brightness, full visual angle, fast response time, wide, the achievable Flexible Displays of operating temperature range, mesh
Before have become the Display Technique of future generation of great competitiveness and development prospect.
In existing OLED display panel, as shown in figure 1, dotted line is the housing 101, GOA of OLED display panel in figure
(Gate Driver on Array, the driving of array base palte row) circuit 102 is located at neighboring area 103, TFT (Thin Film
Transistor, thin film transistor (TFT)) array is located at AA regions 104, and GOA circuits 102 and TFT metal lead wire is set with layer.This
Sample, neighboring area 103 frame of OLED display panel (corresponding) must cover GOA circuits 102, thus the width d1 of frame compared with
Greatly, it is impossible to adapt to the development trend of current narrow frame.Accordingly, because the presence of frame, the shared display surface in AA regions 104
Product ratio reduces, and influences display effect.
Therefore a kind of OLED display panel and preparation method thereof, OLED display are needed badly to solve the above problems.
The content of the invention
The present invention is for above shortcomings in the prior art, there is provided a kind of OLED display panel and preparation method thereof,
OLED display is small at least partly to solve AA regions, it is difficult to the problem of realizing narrow frame.
The present invention is in order to solve the above technical problems, adopt the following technical scheme that：
The present invention provides a kind of OLED display panel, including substrate layer, and array base palte is sequentially formed with the substrate layer
Row driving GOA circuits, insulating barrier, thin film transistor (TFT) tft array and OLED, wherein, it is electric with the GOA on the insulating barrier
The first via that position corresponding to road is provided through, the GOA circuits pass through first via and the gold of the tft array
Belong to lead connection.
Preferably, the GOA circuits are adjacent to the neighboring area of the OLED display panel.
Further, the OLED display panel also includes being used for the light shield layer for absorbing laser energy, the light shield layer position
Between the substrate layer and the insulating barrier, and between the substrate layer and the GOA circuits.
Preferably, the material of the light shield layer is non-crystalline silicon or tin indium oxide.
Further, the OLED display panel also includes first buffer layer, and the first buffer layer is located at the substrate
Between layer and the light shield layer；And/or
The OLED display panel also includes second buffer layer, and the second buffer layer is located at the insulating barrier and described
Between tft array, the position corresponding with first via is provided through in the second buffer layer the second via, institute
GOA circuits are stated to be connected with the metal lead wire of the tft array by first via and second via.
The present invention also provides a kind of OLED display, including OLED display panel as previously described.
The present invention also provides a kind of preparation method of OLED display panel, and methods described includes：
Substrate layer, array base palte row driving GOA circuits and insulating barrier are sequentially formed on underlay substrate；
By patterning processes, position corresponding with the GOA circuits forms the first via run through on the insulating barrier；
On the insulating barrier formed thin film transistor (TFT) tft array, and make the tft array metal lead wire pass through it is described
First via is connected with the GOA circuits；
OLED is formed on the underlay substrate formed with the tft array.
Further, it is described form substrate layer on underlay substrate after, formed before the GOA circuits, methods described
Also include：
The light shield layer for absorbing laser energy is formed on the underlay substrate formed with the substrate layer；
It is described to form the GOA circuits, specifically include：
Form the GOA circuits on the light shield layer, the light shield layer be located at the substrate layer and the insulating barrier it
Between, and between the substrate layer and the GOA circuits.
Further, the shading formed on the underlay substrate formed with the substrate layer for absorbing laser energy
Layer before, it is described on underlay substrate formed substrate layer after, methods described also includes：In the substrate formed with the substrate layer
First buffer layer is formed on substrate；
The light shield layer formed on the underlay substrate formed with the substrate layer for absorbing laser energy, specific bag
Include：The light shield layer for absorbing laser energy is formed in the first buffer layer；And/or
It is described form insulating barrier on underlay substrate after, the run through is formed on the insulating barrier by patterning processes
Before one via, methods described also includes：
Second buffer layer is formed on the insulating barrier, and is formed and run through in the second buffer layer by patterning processes
The second via；
It is described that thin film transistor (TFT) tft array is formed on the insulating barrier, and pass through the metal lead wire of the tft array
First via is connected with the GOA circuits, is specifically included：
The tft array is formed in the second buffer layer, so that the metal lead wire of the tft array passes through described
Two vias and first via are connected with the GOA circuits.
Further, it is described to be formed on the underlay substrate formed with the tft array after OLED, methods described
Also include：
The underlay substrate is irradiated using laser, so that the underlay substrate separates with the substrate layer；
Remove the underlay substrate.
The present invention can realize following beneficial effect：
OLED display panel provided by the invention and preparation method thereof, OLED display, by the way that GOA circuits are arranged on
The side of tft array adjacent substrate layer, insulating barrier is set between GOA circuits and tft array, and is formed run through on the insulating layer
First via of insulating barrier so that the metal lead wire of GOA circuits and tft array is connected by the first via, so, GOA circuits
Can be overlapping with part AA regions, so as to realize narrow frame, on the premise of panel size is certain, the corresponding face for increasing AA regions
Product.
Brief description of the drawings
Fig. 1 is the schematic diagram of existing OLED display panel；
Fig. 2 is the cross-sectional view of OLED display panel provided by the invention；
Fig. 3 is the top view of OLED display panel provided by the invention；
Fig. 4 is OLED display panel preparation method flow chart provided by the invention；
Fig. 5 a-5f are OLED display panel preparation process schematic diagram provided by the invention.
Marginal data：
101st, housing 102, GOA circuits 103, neighboring area
104th, AA regions 1, substrate layer 2, GOA circuits
3rd, insulating barrier 4, tft array 5, OLED
6th, light shield layer 7, first buffer layer 8, second buffer layer
9th, encapsulating structure 10, underlay substrate 31, the first via
41st, metal lead wire 81, the second via
Embodiment
Below in conjunction with the accompanying drawing in the present invention, clear, complete description is carried out to the technical scheme in the present invention, is shown
So, described embodiment is the part of the embodiment of the present invention, rather than whole embodiments.Based on the implementation in the present invention
Example, the every other embodiment that those of ordinary skill in the art are obtained on the premise of creative work is not made, all belongs to
In the scope of protection of the invention.
As shown in Fig. 2 the present invention provides a kind of OLED display panel, the OLED display panel includes substrate layer 1, substrate
Layer 1 on be sequentially formed with GOA circuits 2, insulating barrier 3, tft array 4 and OLED 5, wherein, on insulating barrier 3 with GOA circuits 2
The first via 31 that corresponding position is provided through, the metal lead wire 41 that GOA circuits 2 pass through the first via 31 and tft array 4
Connection.
With reference to shown in Fig. 2 and Fig. 3, due to GOA circuits 2 and the different layers of tft array 4, but connected by via, GOA electricity
Road 2 can be overlapping with part AA regions 1, and therefore, in embodiments of the present invention, the width d2 of frame is shown less than existing OLED
The width d1 (as shown in Figure 1) of the frame region of panel.It should be noted that the width of frame refers to, OLED display panel
The distance between housing 101 and the edge in AA regions 104.
Preferably, the material of substrate layer 1 and insulating barrier 3 can select PI (Polyimide, polyimides).
OLED display panel provided by the invention, by the way that GOA circuits 2 are arranged on into the one of the adjacent substrate layer 1 of tft array 4
Side, insulating barrier 3 is set between GOA circuits 2 and tft array 4, and forms the first via through insulating barrier 3 on the insulating layer 3
31 so that GOA circuits 2 are connected with the metal lead wire 41 of tft array 4 by the first via 31, and so, GOA circuits 2 can be with portion
Divide AA regions 1 overlapping, so as to realize narrow frame, on the premise of panel size is certain, the corresponding area for increasing AA regions.
With reference to shown in Fig. 2 and Fig. 3, tft array 4 is usually located at the AA regions 104 of OLED display panel, the grid of tft array 4
Pole, source electrode, drain electrode etc. lead to neighboring area 103 by metal lead wire 41, to be connected with drive circuit.It is preferred, therefore, that
GOA circuits 2 are adjacent to the neighboring area 103 of the OLED display panel.
Preferably, the OLED display panel can be flexible display panels, and accordingly, substrate layer 1 has flexibility, is making
, it is necessary to substrate layer 1 is initially formed on the more hard underlay substrate of quality, on substrate layer 1 during standby flexible display panels
Prepared by each film layer and display device completes and then separates substrate layer 1 and underlay substrate by way of laser irradiates.
Further, as shown in Fig. 2 the OLED display panel can also include light shield layer 6, light shield layer 6 is located at substrate
Between layer 1 and insulating barrier 3, and between substrate layer 3 and GOA circuits 2, that is to say, that GOA circuits 2 are formed on light shield layer 6,
Insulating barrier 3 covers GOA circuits 2 and light shield layer 6.Light shield layer 6 can absorb laser energy when substrate layer 1 is separated with underlay substrate
Amount, avoid laser from being reflected after passing through substrate layer 1 at GOA circuits 2, cause GOA circuits 2 to separate, shell with substrate layer 1
Fall, ensure the fastness of GOA circuits 2.
Preferably, the material of light shield layer 6 can be non-crystalline silicon or tin indium oxide.Both materials have UV absorption energy
Power, laser light can be prevented.Non-crystalline silicon can be prepared by being vapor-deposited, and tin indium oxide can be prepared by magnetron sputtering,
Both approaches are the technological means for showing that industry is conventional, are invested without extras.
Further, as shown in Fig. 2 the OLED display panel can also include first buffer layer 7, first buffer layer 7
Between substrate layer 1 and light shield layer 6.
Further, the OLED display panel can also include second buffer layer 8, and second buffer layer 8 is located at insulating barrier 3
Between tft array 4, the position corresponding with the first via 31 is provided through in second buffer layer 8 the second via 81,
GOA circuits 2 are connected by the first via 31 and the second via 81 with the metal lead wire 41 of tft array 4.
It should be noted that the first via 31 and the second via 81 can synchronously be formed by a patterning processes, to subtract
Few preparation technology.
Further, as shown in Fig. 2 the OLED display panel can also include encapsulating structure 9, encapsulating structure 9 is set
In OLED 5, neighboring area 103 and AA regions 104 are covered, for preventing the water oxygen in environment from entering OLED 5, is prolonged
The service life of long OLED 5, ensure the display effect of OLED display panel.
The present invention also provides a kind of OLED display, and the OLED display includes foregoing OLED display surfaces
Plate.
The OLED display, which can be that Electronic Paper, mobile phone, tablet personal computer, television set, DPF etc. are any, to be had
The product or part of crystal display.
OLED display provided by the invention, by the way that GOA circuits 2 are arranged on into the one of the adjacent substrate layer 1 of tft array 4
Side, insulating barrier 3 is set between GOA circuits 2 and tft array 4, and forms the first via through insulating barrier 3 on the insulating layer 3
31 so that GOA circuits 2 are connected with the metal lead wire 41 of tft array 4 by the first via 31, and so, GOA circuits 2 can be with portion
Divide AA regions 1 overlapping, so as to realize narrow frame, on the premise of panel size is certain, the corresponding area for increasing AA regions.
The present invention also provides a kind of OLED display panel preparation method, and methods described shows for preparing foregoing OLED
Show panel, with reference to shown in Fig. 2, Fig. 3, Fig. 4 and Fig. 5 a- Fig. 5 f, the described method comprises the following steps：
Step 41, substrate layer 1, GOA circuits 2 and insulating barrier 3 are sequentially formed on underlay substrate 10.
Specifically, providing a kind of underlay substrate 10, underlay substrate 10 can be glass substrate.The step 41 specifically includes
Following sub-step：
Step 411, substrate layer 1 is formed on underlay substrate 10.
Step 412, GOA circuits 2 are formed on the underlay substrate 10 formed with substrate layer 1, it is preferred that GOA circuits 2 are neighbouring
The neighboring area 103 of the OLED display panel.
Step 413, insulating barrier 3 is formed on the underlay substrate 10 formed with GOA circuits 2.
Step 42, the first via run through is formed with 2 corresponding position of GOA circuits on the insulating layer 3 by patterning processes
31。
Step 43, tft array 4 is formed on the insulating layer 3, and the metal lead wire 41 of tft array 4 is passed through the first via 31
It is connected with GOA circuits 2.
Step 44, OLED 5 is formed on the underlay substrate 10 formed with tft array 4.
Specifically, OLED 5 can be prepared by techniques such as evaporation, inkjet printings.
It should be noted that in order to prevent the water oxygen in environment from entering OLED 5, extend OLED 5 uses the longevity
Life, ensure the display effect of OLED display panel, OLED 5 and then thereon formation encapsulating structure 9 are completed preparing.
The preparation method of OLED display panel provided by the invention is can be seen that by step 41-44, by the way that GOA is electric
Road 2 is arranged on the side of the adjacent substrate floor 1 of tft array 4, and insulating barrier 3 is set between GOA circuits 2 and tft array 4, and exhausted
The first via 31 through insulating barrier 3 is formed in edge layer 3 so that the metal lead wire 41 of GOA circuits 2 and tft array 4 passes through first
Via 31 connects, and so, GOA circuits 2 can be overlapping with part AA regions 1, so as to realize narrow frame, certain in panel size
Under the premise of, the corresponding area for increasing AA regions.The preparation method of the OLED display panel, existing mask plate can be utilized real
It is existing, patterning processes will not be increased, it is easy to accomplish.
Further, in step 41, substrate layer 1 is formed on underlay substrate 10 and (i.e. after step 411), forms GOA
(i.e. before step 412), methods described also includes following sub-step to circuit 2：
Step 412 ', the light shield layer 6 for absorbing laser energy is formed on the underlay substrate 10 formed with substrate layer 1.
Accordingly, (i.e. step 412) specifically includes the formation GOA circuits 2：GOA circuits 2 are formed on light shield layer 6, are hidden
Photosphere 6 is between substrate layer 1 and insulating barrier 3, and between substrate layer 1 and GOA circuits 2.
Further, the light shield layer 6 for absorbing laser energy is formed on the underlay substrate 10 formed with substrate layer 1
Substrate layer 1 is formed before (i.e. step 412 '), on underlay substrate 10, and (i.e. after step 411), methods described is also including following
Step：
Step 411 ', first buffer layer 7 is formed on the underlay substrate 10 formed with substrate layer 1.
Accordingly, the light shield layer 6 formed on the underlay substrate 10 formed with substrate layer 1 for absorbing laser energy
(i.e. step 412 ') specifically include：The light shield layer 6 for absorbing laser energy is formed in first buffer layer 7.
Successively by step 411, step 411 after ', step 412 ', the structure shown in Fig. 5 a is obtained, then performs step
412, GOA circuits 2 are prepared, obtain the structure shown in Fig. 5 b, step 413 is then performed, insulating barrier 3 is prepared, so as to obtain Fig. 5 c
Structure.
Further, insulating barrier 3 is formed on underlay substrate 10 (i.e. in insulating barrier after step 41), by patterning processes
The first via 31 for running through is formed on 3, and (i.e. before step 42), methods described is further comprising the steps of：
Step 41 ', second buffer layer 8 is formed on the insulating layer 3.
Specifically, the material of second buffer layer 8 can select silicon oxide (such as SiOx) or silicon nitride (such as
) etc. or both combinations SiNx.By step 41 ' after, structure shown in Fig. 5 d can be obtained.
Step 42 ', the second via 81 run through is formed in second buffer layer 8 by patterning processes.
Accordingly, it is described to form tft array 4 on the insulating layer 3, and the metal lead wire 41 of tft array 4 is passed through the first mistake
Hole 31 is connected with GOA circuits 2 and (i.e. step 43), specifically included：
Tft array 4 is formed in second buffer layer 8, so that the metal lead wire 41 of tft array 4 passes through the He of the second via 81
First via 31 is connected with GOA circuits 2, so as to obtain the structure shown in Fig. 5 e.
When the OLED display panel is flexible display panels, further, in the substrate base formed with tft array 4
OLED 5 is formed on plate 10, and (i.e. after step 44), methods described is further comprising the steps of：
Step 45, underlay substrate 10 is irradiated using laser, so that underlay substrate 10 separates with substrate layer 1.
Specifically, as shown in figure 5f, during laser irradiates underlay substrate 10, light shield layer 6 can absorb laser production
Raw heat, avoid laser from being reflected after passing through substrate layer 1 at GOA circuits 2, cause GOA circuits 2 to occur with substrate layer 1
Separation, peel off.
Step 46, underlay substrate 10 is removed.
Specifically, after underlay substrate 10 is removed from substrate layer 1, you can obtain the OLED display panel shown in Fig. 2
Structure.
OLED display panel provided by the invention and preparation method thereof, OLED display, display device can be reduced
Frame and invalid viewing area.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (10)
1. a kind of OLED display panel, including substrate layer, it is characterised in that array base palte row is sequentially formed with the substrate layer
Drive GOA circuits, insulating barrier, thin film transistor (TFT) tft array and OLED, wherein, on the insulating barrier with the GOA circuits
The first via that corresponding position is provided through, the GOA circuits pass through first via and the metal of the tft array
Lead connects.
2. OLED display panel as claimed in claim 1, it is characterised in that the GOA circuits are adjacent to the OLED display surfaces
The neighboring area of plate.
3. OLED display panel as claimed in claim 1 or 2, it is characterised in that also include being used for the screening for absorbing laser energy
Photosphere, the light shield layer between the substrate layer and the insulating barrier, and the substrate layer and the GOA circuits it
Between.
4. OLED display panel as claimed in claim 3, it is characterised in that the material of the light shield layer is non-crystalline silicon or oxidation
Indium tin.
5. OLED display panel as claimed in claim 3, it is characterised in that also including first buffer layer, first buffering
Layer is between the substrate layer and the light shield layer；And/or
The OLED display panel also includes second buffer layer, and the second buffer layer is located at the insulating barrier and the TFT battle arrays
Between row, the position corresponding with first via is provided through in the second buffer layer the second via, the GOA
Circuit is connected by first via and second via with the metal lead wire of the tft array.
6. a kind of OLED display, it is characterised in that including the OLED display panel as described in claim any one of 1-5.
7. a kind of OLED display panel preparation method, it is characterised in that methods described includes：
Substrate layer, array base palte row driving GOA circuits and insulating barrier are sequentially formed on underlay substrate；
By patterning processes, position corresponding with the GOA circuits forms the first via run through on the insulating barrier；
Thin film transistor (TFT) tft array is formed on the insulating barrier, and makes the metal lead wire of the tft array by described first
Via is connected with the GOA circuits；
OLED is formed on the underlay substrate formed with the tft array.
8. method as claimed in claim 7, it is characterised in that it is described on underlay substrate formed substrate layer after, formed institute
Before stating GOA circuits, methods described also includes：
The light shield layer for absorbing laser energy is formed on the underlay substrate formed with the substrate layer；
It is described to form the GOA circuits, specifically include：
The GOA circuits are formed on the light shield layer, the light shield layer between the substrate layer and the insulating barrier, with
And between the substrate layer and the GOA circuits.
9. method as claimed in claim 8, it is characterised in that described to be formed on the underlay substrate formed with the substrate layer
Before light shield layer for absorbing laser energy, it is described on underlay substrate formed substrate layer after, methods described also includes：
First buffer layer is formed on underlay substrate formed with the substrate layer；
The light shield layer formed on the underlay substrate formed with the substrate layer for absorbing laser energy, is specifically included：
The light shield layer for absorbing laser energy is formed in the first buffer layer；And/or
It is described on underlay substrate formed insulating barrier after, the first mistake run through is formed on the insulating barrier by patterning processes
Before hole, methods described also includes：
Second buffer layer is formed on the insulating barrier, and forms run through in the second buffer layer by patterning processes
Two vias；
It is described on the insulating barrier formed thin film transistor (TFT) tft array, and make the tft array metal lead wire pass through it is described
First via is connected with the GOA circuits, is specifically included：
The tft array is formed in the second buffer layer, so that the metal lead wire of the tft array passes through second mistake
Hole and first via are connected with the GOA circuits.
10. the method as described in claim any one of 7-9, it is characterised in that described in the substrate formed with the tft array
Formed on substrate after OLED, methods described also includes：
The underlay substrate is irradiated using laser, so that the underlay substrate separates with the substrate layer；
Remove the underlay substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710964495.3A CN107623023A (en) | 2017-10-17 | 2017-10-17 | A kind of OLED display panel and preparation method thereof, OLED display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710964495.3A CN107623023A (en) | 2017-10-17 | 2017-10-17 | A kind of OLED display panel and preparation method thereof, OLED display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107623023A true CN107623023A (en) | 2018-01-23 |
Family
ID=61092187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710964495.3A Pending CN107623023A (en) | 2017-10-17 | 2017-10-17 | A kind of OLED display panel and preparation method thereof, OLED display |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107623023A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109148529A (en) * | 2018-08-20 | 2019-01-04 | 武汉华星光电半导体显示技术有限公司 | Substrate and display device |
| CN109283733A (en) * | 2018-11-09 | 2019-01-29 | 昆山龙腾光电有限公司 | A kind of reflective display panel, the production method of display panel and display device |
| CN110164914A (en) * | 2018-10-15 | 2019-08-23 | 京东方科技集团股份有限公司 | Semiconductor devices, display panel, display device and manufacturing method |
| CN110310575A (en) * | 2019-06-28 | 2019-10-08 | 云谷（固安）科技有限公司 | A kind of display panel and preparation method thereof and display device |
| CN110890050A (en) * | 2019-11-21 | 2020-03-17 | 武汉华星光电半导体显示技术有限公司 | Array substrate, manufacturing method thereof and display device |
| CN111123574A (en) * | 2020-01-16 | 2020-05-08 | 深圳市华星光电半导体显示技术有限公司 | Display panel, display device and electronic equipment |
| CN111341279A (en) * | 2018-12-19 | 2020-06-26 | 乐金显示有限公司 | Display panel and display device |
| CN111490064A (en) * | 2020-04-11 | 2020-08-04 | 北京元芯碳基集成电路研究院 | Display panel and manufacturing method thereof |
| US10854681B2 (en) | 2018-10-15 | 2020-12-01 | Au Optronics Corporation | Display device |
| WO2021004906A1 (en) * | 2019-07-05 | 2021-01-14 | Airbus Operations Gmbh | Process for producing flexible oled screens |
| WO2021063587A1 (en) * | 2019-09-30 | 2021-04-08 | Airbus Operations Gmbh | Process for producing flexible oled screens and flexible oled screens |
| CN113696468A (en) * | 2021-08-24 | 2021-11-26 | Tcl华星光电技术有限公司 | Heating film pasting device and heating film pasting method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022085A (en) * | 2007-03-12 | 2007-08-22 | 友达光电股份有限公司 | Semiconductor element and producing method thereof |
| US20110115365A1 (en) * | 2009-11-16 | 2011-05-19 | Won-Kyu Kwak | Display device and method of manufacturing display device |
| CN103855225A (en) * | 2012-12-03 | 2014-06-11 | 乐金显示有限公司 | Thin film transistor, display device and method of manufacturing the same |
| CN107121852A (en) * | 2017-06-20 | 2017-09-01 | 武汉华星光电技术有限公司 | A kind of array base palte and liquid crystal panel |
| CN107248521A (en) * | 2017-06-19 | 2017-10-13 | 深圳市华星光电技术有限公司 | AMOLED back board structures |
-
2017
- 2017-10-17 CN CN201710964495.3A patent/CN107623023A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101022085A (en) * | 2007-03-12 | 2007-08-22 | 友达光电股份有限公司 | Semiconductor element and producing method thereof |
| US20110115365A1 (en) * | 2009-11-16 | 2011-05-19 | Won-Kyu Kwak | Display device and method of manufacturing display device |
| CN103855225A (en) * | 2012-12-03 | 2014-06-11 | 乐金显示有限公司 | Thin film transistor, display device and method of manufacturing the same |
| CN107248521A (en) * | 2017-06-19 | 2017-10-13 | 深圳市华星光电技术有限公司 | AMOLED back board structures |
| CN107121852A (en) * | 2017-06-20 | 2017-09-01 | 武汉华星光电技术有限公司 | A kind of array base palte and liquid crystal panel |
Cited By (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020037770A1 (en) * | 2018-08-20 | 2020-02-27 | 武汉华星光电半导体显示技术有限公司 | Substrate and display device |
| US11424309B2 (en) | 2018-08-20 | 2022-08-23 | Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. | Substrate and display device having a gate driver on array circuit |
| CN109148529A (en) * | 2018-08-20 | 2019-01-04 | 武汉华星光电半导体显示技术有限公司 | Substrate and display device |
| CN109148529B (en) * | 2018-08-20 | 2021-11-02 | 武汉华星光电半导体显示技术有限公司 | Substrate and display device |
| CN110164914B (en) * | 2018-10-15 | 2022-02-08 | 京东方科技集团股份有限公司 | Semiconductor device, display panel, display device, and manufacturing method |
| CN110164914A (en) * | 2018-10-15 | 2019-08-23 | 京东方科技集团股份有限公司 | Semiconductor devices, display panel, display device and manufacturing method |
| WO2020077948A1 (en) * | 2018-10-15 | 2020-04-23 | Boe Technology Group Co., Ltd. | Display substrate, display panel, display apparatus, and method of fabricating display substrate |
| US11380715B2 (en) | 2018-10-15 | 2022-07-05 | Boe Technology Group Co., Ltd. | Display substrate, display panel, display apparatus, and method of fabricating display substrate |
| US10854681B2 (en) | 2018-10-15 | 2020-12-01 | Au Optronics Corporation | Display device |
| CN109283733A (en) * | 2018-11-09 | 2019-01-29 | 昆山龙腾光电有限公司 | A kind of reflective display panel, the production method of display panel and display device |
| CN111341279A (en) * | 2018-12-19 | 2020-06-26 | 乐金显示有限公司 | Display panel and display device |
| US11367399B2 (en) | 2018-12-19 | 2022-06-21 | Lg Display Co., Ltd. | Display panel and display device |
| CN111341279B (en) * | 2018-12-19 | 2022-05-03 | 乐金显示有限公司 | Display panel and display device |
| CN110310575A (en) * | 2019-06-28 | 2019-10-08 | 云谷（固安）科技有限公司 | A kind of display panel and preparation method thereof and display device |
| WO2021004906A1 (en) * | 2019-07-05 | 2021-01-14 | Airbus Operations Gmbh | Process for producing flexible oled screens |
| WO2021063587A1 (en) * | 2019-09-30 | 2021-04-08 | Airbus Operations Gmbh | Process for producing flexible oled screens and flexible oled screens |
| CN110890050A (en) * | 2019-11-21 | 2020-03-17 | 武汉华星光电半导体显示技术有限公司 | Array substrate, manufacturing method thereof and display device |
| CN110890050B (en) * | 2019-11-21 | 2022-07-12 | 武汉华星光电半导体显示技术有限公司 | Array substrate, manufacturing method thereof and display device |
| CN111123574B (en) * | 2020-01-16 | 2022-05-03 | 深圳市华星光电半导体显示技术有限公司 | Display panel, display device and electronic equipment |
| CN111123574A (en) * | 2020-01-16 | 2020-05-08 | 深圳市华星光电半导体显示技术有限公司 | Display panel, display device and electronic equipment |
| CN111490064A (en) * | 2020-04-11 | 2020-08-04 | 北京元芯碳基集成电路研究院 | Display panel and manufacturing method thereof |
| CN111490064B (en) * | 2020-04-11 | 2023-07-11 | 北京元芯碳基集成电路研究院 | Display panel and manufacturing method thereof |
| CN113696468A (en) * | 2021-08-24 | 2021-11-26 | Tcl华星光电技术有限公司 | Heating film pasting device and heating film pasting method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107623023A (en) | A kind of OLED display panel and preparation method thereof, OLED display | |
| JP6882405B2 (en) | Semiconductor device | |
| JP6856795B2 (en) | Semiconductor devices and display devices | |
| JP7024005B2 (en) | Display device | |
| JP6803429B2 (en) | Display device | |
| JP6775659B2 (en) | Display device | |
| JP6946484B2 (en) | Semiconductor devices and display devices | |
| JP5933656B2 (en) | Semiconductor device | |
| CN104900676B (en) | Array substrate and its manufacturing method, display device | |
| JP2022105518A (en) | Display device | |
| JP2021073740A (en) | Semiconductor device | |
| US10090326B2 (en) | Flexible display substrate and a manufacturing method thereof, as well as a flexible display device | |
| JP2022068149A (en) | Display device | |
| JP5716074B2 (en) | Method for manufacturing semiconductor device | |
| CN103943660B (en) | A kind of display device | |
| CN106775081A (en) | Organic electroluminescence display panel and pressure sensitive display device | |
| US20220320146A1 (en) | Display panel, manufacturing method thereof, and display device | |
| JP2014195084A (en) | Semiconductor device | |
| JP2016222526A (en) | Film formation method and element | |
| TW201342491A (en) | Method for manufacturing semiconductor device | |
| CN103928343B (en) | Thin film transistor (TFT) and organic light emitting diode display preparation method | |
| CN109920923A (en) | Organic light emitting diode device and preparation method, display panel, display device | |
| CN103178119B (en) | Array base palte, array base palte preparation method and display unit | |
| CN109273516A (en) | AMOLED array basal plate and display device | |
| CN108598089A (en) | The production method and TFT substrate of TFT substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20180123 |