CN111455452A - 一种加料装置、拉晶炉及加料方法 - Google Patents
一种加料装置、拉晶炉及加料方法 Download PDFInfo
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- CN111455452A CN111455452A CN202010280241.1A CN202010280241A CN111455452A CN 111455452 A CN111455452 A CN 111455452A CN 202010280241 A CN202010280241 A CN 202010280241A CN 111455452 A CN111455452 A CN 111455452A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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CN202010280241.1A CN111455452B (zh) | 2020-04-10 | 2020-04-10 | 一种加料装置、拉晶炉及加料方法 |
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CN202010280241.1A CN111455452B (zh) | 2020-04-10 | 2020-04-10 | 一种加料装置、拉晶炉及加料方法 |
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CN111455452A true CN111455452A (zh) | 2020-07-28 |
CN111455452B CN111455452B (zh) | 2021-11-30 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114351247A (zh) * | 2022-01-12 | 2022-04-15 | 苏州天准科技股份有限公司 | 一种拉晶晃动监测方法、存储介质、终端和拉晶设备 |
CN114686978A (zh) * | 2022-03-24 | 2022-07-01 | 徐州鑫晶半导体科技有限公司 | 加料组件及具有其的单晶生长装置、加料方法 |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030041795A1 (en) * | 2001-07-06 | 2003-03-06 | Manabu Moroishi | Method for supplying CZ material |
CN202671707U (zh) * | 2012-05-07 | 2013-01-16 | 常州顺风光电材料有限公司 | 直拉硅单晶二次加料装置 |
CN202968746U (zh) * | 2012-10-11 | 2013-06-05 | 特变电工新疆新能源股份有限公司 | 一种加料装置 |
CN204401145U (zh) * | 2015-01-07 | 2015-06-17 | 山东兆鸿光电材料有限公司 | 钛宝石炉掺杂加料装置 |
CN105420806A (zh) * | 2015-12-25 | 2016-03-23 | 安徽华芯半导体有限公司 | 一种单晶炉二次加料系统及加料方法 |
CN106119953A (zh) * | 2016-08-31 | 2016-11-16 | 浙江晶盛机电股份有限公司 | 直拉式单晶炉硅料复投装置 |
CN206052201U (zh) * | 2016-08-31 | 2017-03-29 | 浙江晶盛机电股份有限公司 | 一种直拉式单晶炉硅料复投装置 |
JP2017088441A (ja) * | 2015-11-09 | 2017-05-25 | 株式会社Sumco | 原料のリチャージ方法及び単結晶引上げ方法並びにその方法に用いられる蓋付容器 |
CN107815735A (zh) * | 2016-09-14 | 2018-03-20 | 上海新昇半导体科技有限公司 | 一种多晶硅二次加料装置及方法 |
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2020
- 2020-04-10 CN CN202010280241.1A patent/CN111455452B/zh active Active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030041795A1 (en) * | 2001-07-06 | 2003-03-06 | Manabu Moroishi | Method for supplying CZ material |
CN202671707U (zh) * | 2012-05-07 | 2013-01-16 | 常州顺风光电材料有限公司 | 直拉硅单晶二次加料装置 |
CN202968746U (zh) * | 2012-10-11 | 2013-06-05 | 特变电工新疆新能源股份有限公司 | 一种加料装置 |
CN204401145U (zh) * | 2015-01-07 | 2015-06-17 | 山东兆鸿光电材料有限公司 | 钛宝石炉掺杂加料装置 |
JP2017088441A (ja) * | 2015-11-09 | 2017-05-25 | 株式会社Sumco | 原料のリチャージ方法及び単結晶引上げ方法並びにその方法に用いられる蓋付容器 |
CN105420806A (zh) * | 2015-12-25 | 2016-03-23 | 安徽华芯半导体有限公司 | 一种单晶炉二次加料系统及加料方法 |
CN106119953A (zh) * | 2016-08-31 | 2016-11-16 | 浙江晶盛机电股份有限公司 | 直拉式单晶炉硅料复投装置 |
CN206052201U (zh) * | 2016-08-31 | 2017-03-29 | 浙江晶盛机电股份有限公司 | 一种直拉式单晶炉硅料复投装置 |
CN107815735A (zh) * | 2016-09-14 | 2018-03-20 | 上海新昇半导体科技有限公司 | 一种多晶硅二次加料装置及方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114351247A (zh) * | 2022-01-12 | 2022-04-15 | 苏州天准科技股份有限公司 | 一种拉晶晃动监测方法、存储介质、终端和拉晶设备 |
CN114686978A (zh) * | 2022-03-24 | 2022-07-01 | 徐州鑫晶半导体科技有限公司 | 加料组件及具有其的单晶生长装置、加料方法 |
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CN111455452B (zh) | 2021-11-30 |
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Effective date of registration: 20210924 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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Address after: Room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi 710065 Patentee after: Xi'an Yisiwei Material Technology Co.,Ltd. Patentee after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Patentee before: Xi'an yisiwei Material Technology Co.,Ltd. Patentee before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
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