CN111434030A - 一种振荡器的集成电路 - Google Patents
一种振荡器的集成电路 Download PDFInfo
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- CN111434030A CN111434030A CN201880078141.1A CN201880078141A CN111434030A CN 111434030 A CN111434030 A CN 111434030A CN 201880078141 A CN201880078141 A CN 201880078141A CN 111434030 A CN111434030 A CN 111434030A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1212—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair
- H03B5/1215—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the amplifier comprising a pair of transistors, wherein an output terminal of each being connected to an input terminal of the other, e.g. a cross coupled pair the current source or degeneration circuit being in common to both transistors of the pair, e.g. a cross-coupled long-tailed pair
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
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- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
本申请实施例提供一种振荡器的集成电路,涉及电子技术领域,用于降低振荡器的集成电路的相位噪声。该集成电路包括变压器、交叉耦合单元和尾电感单元;其中,变压器包括互相缠绕的第一线圈和第二线圈,第一线圈和第二线圈的电压端均耦合至电源端(VDD),第一线圈包括一对第一输出端,第二线圈包括一对第二输出端,交叉耦合单元包括第一MOS管和第二MOS管,第一MOS管和第二MOS管的栅极分别与一对第二输出端相接,第一MOS管和第二MOS管的漏极分别与一对第一输出端相接,第一MOS管和第二MOS管的源极均通过尾电感单元耦合至地端(VSS),其中,尾电感单元自交叉耦合单元越过变压器,朝向电压端所处的一侧延伸。
Description
PCT国内申请,说明书已公开。
Claims (12)
- PCT国内申请,权利要求书已公开。
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PCT/CN2018/087578 WO2019218371A1 (zh) | 2018-05-18 | 2018-05-18 | 一种振荡器的集成电路 |
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CN111434030A true CN111434030A (zh) | 2020-07-17 |
CN111434030B CN111434030B (zh) | 2022-04-22 |
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WO (1) | WO2019218371A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111934623A (zh) * | 2020-07-29 | 2020-11-13 | 华南理工大学 | 一种电流复用振荡器 |
CN114584075A (zh) * | 2022-03-11 | 2022-06-03 | 安徽传矽微电子有限公司 | 一种变压器型分布式多核振荡器及其集成电路与终端 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI691979B (zh) * | 2019-10-24 | 2020-04-21 | 威鋒電子股份有限公司 | 晶片內建電感結構 |
CN112838859A (zh) * | 2019-11-22 | 2021-05-25 | 瑞昱半导体股份有限公司 | 电感电容振荡器及共模共振腔 |
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US8736392B2 (en) * | 2009-03-18 | 2014-05-27 | Qualcomm Incorporated | Transformer-based CMOS oscillators |
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- 2018-05-18 CN CN201880078141.1A patent/CN111434030B/zh active Active
- 2018-05-18 WO PCT/CN2018/087578 patent/WO2019218371A1/zh active Application Filing
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111934623A (zh) * | 2020-07-29 | 2020-11-13 | 华南理工大学 | 一种电流复用振荡器 |
CN114584075A (zh) * | 2022-03-11 | 2022-06-03 | 安徽传矽微电子有限公司 | 一种变压器型分布式多核振荡器及其集成电路与终端 |
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WO2019218371A1 (zh) | 2019-11-21 |
CN111434030B (zh) | 2022-04-22 |
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