CN111416207A - Millimeter wave SIW horn antenna loaded with EBG surface - Google Patents
Millimeter wave SIW horn antenna loaded with EBG surface Download PDFInfo
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- CN111416207A CN111416207A CN202010332112.2A CN202010332112A CN111416207A CN 111416207 A CN111416207 A CN 111416207A CN 202010332112 A CN202010332112 A CN 202010332112A CN 111416207 A CN111416207 A CN 111416207A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/48—Earthing means; Earth screens; Counterpoises
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/50—Structural association of antennas with earthing switches, lead-in devices or lightning protectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q13/00—Waveguide horns or mouths; Slot antennas; Leaky-waveguide antennas; Equivalent structures causing radiation along the transmission path of a guided wave
- H01Q13/02—Waveguide horns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
- H01Q19/10—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/0006—Particular feeding systems
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
- H01Q21/061—Two dimensional planar arrays
- H01Q21/064—Two dimensional planar arrays using horn or slot aerials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q3/00—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system
- H01Q3/26—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture
- H01Q3/30—Arrangements for changing or varying the orientation or the shape of the directional pattern of the waves radiated from an antenna or antenna system varying the relative phase or relative amplitude of energisation between two or more active radiating elements; varying the distribution of energy across a radiating aperture varying the relative phase between the radiating elements of an array
Abstract
The invention discloses a millimeter wave SIW horn antenna loaded with an EBG surface, and belongs to the technical field of antenna microwaves. The radiating antenna comprises an upper EBG layer metal plate (4), an upper EBG layer dielectric substrate (1), an upper radiating layer metal plate (5), a radiating layer dielectric substrate (2), a lower radiating layer metal plate (6), a lower EBG layer dielectric substrate (3) and a lower EBG layer metal plate (7) which are sequentially laminated together, a feeding layer metal plate (8) which is coplanar and interconnected with the upper radiating layer metal plate (5), and a feeding layer metal ground (9) which is coplanar and interconnected with the lower radiating layer metal plate (6); a metal patch array and metalized through holes (10) are distributed on the upper EBG layer metal plate (4); the metal plate structures of the upper EBG layer and the lower EBG layer are consistent, and the dielectric substrate structures of the upper EBG layer and the lower EBG layer are consistent; the plurality of SIW horn cavity metalized through holes (11) are equivalent to rectangular metal waveguides. The invention provides a millimeter wave SIW horn antenna with a high front-to-back ratio and high gain and a small-caliber EBG-loaded surface.
Description
Technical Field
The invention belongs to the technical field of antenna microwave, and particularly relates to a millimeter wave (dielectric integrated waveguide) SIW (Substrate integrated waveguide) horn antenna loaded with an EBG (Electromagnetic band gap) structure.
Background
With the increasing tension of the electromagnetic spectrum of the traditional microwave band, the wireless application of the millimeter wave band is becoming more and more extensive. In wireless applications in millimeter wave band, such as point-to-point high-speed communication, high-resolution radar, etc., the demands for antenna miniaturization, high integration, and low cost are increasing.
The traditional horn antenna has the advantages of high front-to-back ratio (forward energy/backward energy), high gain and the like, but the defects of high profile, large volume and the like limit the application of the horn antenna in millimeter waves, particularly in millimeter wave scanning arrays. In the SIW (Substrate integrated waveguide) technology, two rows of metallized via hole structures on a dielectric Substrate are equivalent to a rectangular metal waveguide, and a gradually opened metal via hole structure can be equivalent to an H-plane horn wall, wherein the H-plane is a plane containing a magnetic field vector and a maximum radiation direction. The H-face SIW horn antenna adopting the SIW technology has the advantages of small section, simple structure and easy integration with an active circuit, thereby having good development prospect in millimeter wave bands. However, the millimeter wave H-plane SIW horn antenna also has the disadvantages of difficult matching, high back lobe level, low gain and the like due to the factors of thin thickness of the dielectric sheet, high dielectric constant and the like, and the caliber length of the millimeter wave H-plane SIW horn antenna is difficult to be reduced to within 1 wavelength of the central operating frequency due to the poor matching performance of the dielectric substrate with high dielectric constant, so that the application of the millimeter wave H-plane SIW horn antenna in the aspect of active array is greatly limited. Therefore, through the improvement of the structure of the traditional millimeter wave H-plane SIW horn antenna, the millimeter wave H-plane SIW horn antenna with small caliber, low back lobe (namely high front-to-back ratio) and high gain is designed to have high value.
Disclosure of Invention
The invention aims to provide a millimeter wave SIW horn antenna which has a high front-to-back ratio, a high gain and a small caliber and is loaded with an EBG surface.
Specifically, the invention provides a millimeter wave SIW horn antenna loaded with an EBG surface, which comprises an upper EBG layer metal plate 4, an upper EBG layer dielectric substrate 1, an upper radiation layer metal plate 5, a radiation layer dielectric substrate 2, a lower radiation layer metal plate 6, a lower EBG layer dielectric substrate 3 and a lower EBG layer metal plate 7 which are sequentially pressed together, a feed layer metal plate 8 which is coplanar and interconnected with the upper radiation layer metal plate 5, and a feed layer metal ground 9 which is coplanar and interconnected with the lower radiation layer metal plate 6;
metal patch arrays are distributed on the upper EBG layer metal plate 4; the metalized via hole 10 penetrates through the upper EBG layer metal plate 4 and the upper EBG layer dielectric substrate 1 to form a via hole array, and the center of the metalized via hole 10 is consistent with the center of the corresponding metal patch;
the lower EBG layer metal plate 7 and the upper EBG layer metal plate 4 have the same structure, and the lower EBG layer dielectric substrate 3 and the upper EBG layer dielectric substrate 1 have the same structure;
the plurality of SIW horn cavity metalized through holes 11 penetrate through the upper radiation layer metal plate 5, the lower radiation layer metal plate 6 and the radiation layer medium substrate 2, and are distributed by gradually opening towards two outer sides from one side of the upper radiation layer metal plate 5, which is interconnected with the feed layer metal plate 8, of the upper radiation layer metal plate 5, and are equivalent to rectangular metal waveguides.
Furthermore, the upper EBG layer dielectric substrate 1, the radiation layer dielectric substrate 2 and the lower EBG layer dielectric substrate 3 are all made of L TCC (L w Temperature Co-fired Ceramic) plates or PTEE (polytetrafluoroethylene) microwave plates.
Further, the metal patch array is composed of rectangular metal patches.
Further, the sides of the rectangular metal patches are equal.
Further, the upper EBG layer metal plate 4 is divided into rectangular metal patch arrays by the rectangular transverse grooves and the rectangular longitudinal grooves etched thereon, the groove width is less than 0.06 wavelength of the central operating frequency, and the side length of the rectangular metal patch is 0.08 wavelength of the central operating frequency.
Further, the SIW horn cavity metalized via holes 11 are two rows of metalized via holes symmetrically distributed along the central axis.
Further, the aperture of the SIW horn cavity metalized via 11 is smaller than the wavelength of 0.1 central operating frequency; the minimum distance between the centers of the two rows of SIW horn cavity metalized through holes 11 is greater than the wavelength of 0.2 central working frequency and less than the wavelength of 0.4 central working frequency; the maximum distance between the centers of the two rows of SIW horn cavity metallized through holes 11 at the opening end of the horn is smaller than the wavelength of 1 central working frequency.
Furthermore, a row of radiation layer longitudinal metalized through holes 12 are distributed on the central axis of the SIW horn cavity metalized through hole 11 and penetrate through the upper radiation layer metal plate 5, the lower radiation layer metal plate 6 and the radiation layer medium substrate 2.
Furthermore, a row of radiation layer transverse metalized through holes 13 are distributed on two sides of the central axis of the SIW horn cavity metalized through hole 11 and penetrate through the upper radiation layer metal plate 5, the lower radiation layer metal plate 6 and the radiation layer medium substrate 2; the radiation layer longitudinal metalized via 12 and the radiation layer lateral metalized via 13 are perpendicular to each other.
Further, the aperture of the radiation layer longitudinal metalized via 12 and the radiation layer transverse metalized via 13 is smaller than 0.1 wavelength of the central operating frequency.
The millimeter wave SIW horn antenna loaded with the EBG surface has the following beneficial effects:
aiming at the problems that the traditional millimeter wave H-plane SIW horn antenna is difficult to match with a small caliber and has high back lobe level, the millimeter wave SIW horn antenna with the EBG surface is characterized in that EBG (Electromagnetic Band Gap) structures are loaded on the upper surface and the lower surface of the antenna while the advantages of the SIW horn antenna, such as low profile, simple structure, easy integration and the like, are reserved, so that most of surface waves reflected at the junction of the horn caliber of the millimeter wave SIW horn antenna with the small caliber and a free space are mutually coupled and offset in the upper EBG surface and the lower EBG surface, and low antenna back lobe and high antenna gain are obtained; and further, a metalized through hole is added to the central line of the aperture of the antenna, so that the phase of the electromagnetic wave in the loudspeaker is adjusted, the reflected wave from the interface of the substrate and the free space is reflected, and the gain is improved.
Drawings
Fig. 1 is a perspective view of an embodiment of the present invention.
Fig. 2 is an exploded view of the various layers of an embodiment of the present invention.
Fig. 3 is a top view of an embodiment of the present invention.
Fig. 4 is a left side view of an embodiment of the present invention.
Fig. 5 is a front view of the upper EBG metal layer and the upper EBG dielectric substrate according to an embodiment of the present invention.
Fig. 6 is a front view of an upper radiating metal layer of an embodiment of the present invention.
FIG. 7 is a graph of reflection coefficient versus operating frequency for an embodiment of the present invention.
Figure 8 is a radiation pattern at an operating frequency of 34GHz for an embodiment of the present invention.
Figure 9 is a radiation pattern at an operating frequency of 35GHz for an embodiment of the present invention.
1-upper EBG layer dielectric substrate; 2-a radiation layer dielectric substrate; 3-lower EBG layer dielectric substrate; 4-upper EBG layer metal plate; 5-upper radiation layer metal plate; 6-lower radiation layer metal plate; 7-lower EBG layer metal plate; 8-feeding layer metal plate; 9-feed layer metal ground; 401-EBG layer metal plate transverse groove; 402-EBG layer metal plate longitudinal grooves; 403-rectangular metal sheet; 10-EBG layer metalized via holes; 11-a metalized via hole of the SIW horn cavity; 12-radiating layer longitudinal metalized vias; 13-radiation layer laterally metallizing the via.
Detailed Description
The present invention will be described in further detail with reference to the following examples and the accompanying drawings.
Example 1:
one embodiment of the invention is a millimeter wave SIW horn antenna loaded with EBG surfaces.
As shown in fig. 1 to 4, the millimeter wave SIW horn antenna loaded with EBG surface of the present embodiment includes an upper EBG layer metal plate 4, an upper EBG layer dielectric substrate 1, an upper radiation layer metal plate 5, a radiation layer dielectric substrate 2, a lower radiation layer metal plate 6, a lower EBG layer dielectric substrate 3 and a lower EBG layer metal plate 7 which are sequentially pressed together, a feed layer metal plate 8 and the upper radiation layer metal plate 5 are coplanar and interconnected, a feed layer metal ground 9 and the lower radiation layer metal plate 6 are coplanar and interconnected, the upper EBG layer dielectric substrate 1, the radiation layer dielectric substrate 2 and the lower EBG layer dielectric substrate 3 are all made of L TCC (L Temperature Co-fired Ceramic) plate, the wavelength (generally 0.2 to 0.7mm) with the plate thickness smaller than 0.15 central operating frequency, preferably, the three layers of dielectric substrate are made of L plate with dielectric constant of 5.7, a ptfe (generally 0.2 to 0.7mm) with the dielectric constant of ptfe, the upper dielectric substrate is made of a millimeter wave loaded with a millimeter wave dielectric material, the upper EBG layer metal plate, the lower dielectric substrate is made of a millimeter wave loaded with a millimeter wave dielectric material, and the upper EBG layer metal plate thickness of a millimeter wave loaded with a millimeter wave gain is preferably higher than that of the millimeter wave loaded metal plate of the upper EBG layer metal plate 4, the upper dielectric substrate, the millimeter wave loaded with a millimeter wave loaded with the microwave dielectric substrate, the microwave antenna.
As shown in fig. 5, the upper EBG layer metal plate 4 is divided into a patch array composed of rectangular metal sheets 403 by rectangular transverse grooves (i.e., EBG layer metal plate transverse grooves 401) and rectangular longitudinal grooves (i.e., EBG layer metal plate longitudinal grooves 402) etched thereon, wherein the groove width is less than the wavelength of 0.06 central operating frequencies, and the rectangular metal sheets 403 have equal side lengths, which is about the wavelength of 0.08 central operating frequencies. The metalized via holes 10 penetrate through the upper EBG layer metal plate 4 and the upper EBG layer dielectric substrate 1 to form a via hole array. The center of the metalized via 10 should coincide with the center of the corresponding rectangular metal patch 403. The lateral spacing between the metallized vias 10 is less than 0.15 wavelength of the center operating frequency, and the longitudinal spacing is less than 0.2 wavelength of the center operating frequency. The metallized via 10 aperture should be less than 0.25 wavelength of the center operating frequency. The lower EBG layer metal plate 7 and the upper EBG layer metal plate 4 have the same structure, and the lower EBG layer dielectric substrate 3 and the upper EBG layer dielectric substrate 1 have the same structure.
As shown in fig. 6, two rows of SIW horn cavity metalized via holes 11 penetrate through the upper radiation layer metal plate 5, the lower radiation layer metal plate 6 and the radiation layer dielectric substrate 2, and are symmetrically distributed by opening upward gradually to two outer sides from the lower end (the side interconnected with the feed layer metal plate 8) of the upper radiation layer metal plate 5, that is, the two rows of SIW horn cavity metalized via holes 11 are distributed in a horn shape and are equivalent to a rectangular metal waveguide. The aperture of the SIW horn cavity metalized via hole 11 should be smaller than the wavelength of 0.1 central operating frequency, the long side of the equivalent rectangular metal waveguide (i.e. the minimum distance between the centers of two rows of the SIW horn cavity metalized via holes 11) should be larger than the wavelength of 0.2 central operating frequency and smaller than the wavelength of 0.4 central operating frequency, and the aperture of the SIW horn (i.e. the maximum distance between the centers of two rows of the SIW horn cavity metalized via holes 11 at the opening end of the horn) should be smaller than the wavelength of 1 central operating frequency. A row of radiation layer longitudinal metalized through holes 12 are distributed on the central axis of the two rows of SIW horn cavity metalized through holes 11 and penetrate through the upper radiation layer metal plate 5, the lower radiation layer metal plate 6 and the radiation layer medium substrate 2. The longitudinal metalized through holes 12 of the radiation layer have the function of enabling millimeter waves to be uniformly distributed at the caliber of the horn. Preferably, a row of radiation layer transverse metalized through holes 13 are further distributed on two sides of the central axis of the two rows of SIW horn cavity metalized through holes 11, and penetrate through the upper radiation layer metal plate 5, the lower radiation layer metal plate 6 and the radiation layer medium substrate 2. The longitudinal metalized through holes 12 of the radiation layer and the transverse metalized through holes 13 of the radiation layer are perpendicular to each other, can be arranged in a cross shape or in a T shape, and are used for adjusting the phase of internal electromagnetic waves and reflecting reflected waves from the interface of the dielectric substrate and the free space, so that the matching performance of the millimeter wave SIW horn antenna is further improved. When there are no radiating layer longitudinal metalized via 12 and no radiating layer lateral metalized via 13, the electromagnetic wave amplitude and phase are not uniform, thereby affecting the gain. The millimeter wave SIW horn antenna provided with the radiation layer longitudinal metalized via 12 and the radiation layer transverse metalized via 13 can further improve the gain compared with the millimeter wave SIW horn antenna only having the radiation layer longitudinal metalized via 12. Ideally, the gain of the millimeter wave SIW horn antenna is maximized when the incident wave and the reflected wave have the same amplitude and the same phase. The aperture of the radiation layer longitudinal metalized via 12 and the radiation layer lateral metalized via 13 should be less than 0.1 wavelength of the center operating frequency.
As shown in fig. 2, the feed layer metal plate 8, the radiation layer dielectric substrate 2, and the feed layer metal ground 9 together form a microstrip transmission line structure (for example, a 50-ohm microstrip transmission line structure uniformly adopted in the industry) for butt joint of an antenna and a back-end circuit, and an electromagnetic wave is transmitted from a microstrip port on one side of the microstrip transmission line structure (i.e., the lower end of the feed layer metal plate 8) to a rectangular metal waveguide equivalent to the SIW horn cavity metalized via hole 11 through the microstrip transmission line structure, and then is radiated to a free space through the SIW horn cavity. In the SIW horn cavity, the radiation layer longitudinal metalized via 12 and the radiation layer transverse metalized via 13 adjust the wave velocity of the forward propagating electromagnetic wave, because the impedance of the dielectric substrate is not matched with the impedance of the free space, the forward propagating electromagnetic wave is reflected at the junction of the horn aperture and the free space, and simultaneously most of surface waves (such as reflected waves of working frequency) reflected at the junction of the horn aperture and the free space are mutually coupled and offset in the upper EBG surface, and similarly, are mutually coupled and offset in the lower EBG surface, so that a lower antenna back lobe and a higher antenna gain are obtained. The upper and lower EBG surfaces correspond to filters for filtering reflected waves of a specific frequency (e.g., an operating frequency).
Taking the working frequency of the antenna design center as 35GHz (wavelength 8.57mm) as an example, the specific size and material parameters of the millimeter wave SIW horn antenna loaded with the EBG surface can be obtained through simulation software, so that the antenna has a small caliber, a high front-to-back ratio and a high gain. The method specifically comprises the following steps:
the upper EBG layer dielectric substrate 1, the radiation layer dielectric substrate 2 and the lower EBG layer dielectric substrate 3 are made of L TCC plates with the dielectric constant of 5.7, the thicknesses of the upper EBG layer dielectric substrate 1 and the lower EBG layer dielectric substrate 3 are both 0.7mm, and the thickness of the radiation layer dielectric substrate 2 is 0.5 mm;
the thicknesses of the upper EBG layer metal plate 4, the upper radiation layer metal plate 5, the lower radiation layer metal plate 6, the lower EBG layer metal plate 7, the feed layer metal plate 8 and the feed layer metal ground 9 are all 35 um;
the size of the upper EBG layer dielectric substrate 1, the lower EBG layer dielectric substrate 3, the upper EBG layer metal plate 4 and the lower EBG layer metal plate 7 is 5.5mm × 6.1.1 mm, the size of the upper radiation layer metal plate 5 and the lower radiation layer metal plate 6 is 5.5mm × 6.5.5 mm, the size of the radiation layer dielectric substrate 2 is 5.5mm × 8.5.5 mm, the size of the feed layer metal plate 8 is 0.75mm × 2mm, and the size of the feed layer metal ground 9 is 4.5mm × 2 mm;
the width of the transverse groove 401 of the EBG layer metal plate is 0.42mm, and the width of the longitudinal groove 402 of the EBG layer metal plate is 0.34 mm; the side length of the rectangular metal sheet 403 is 0.66 mm; the transverse spacing of the EBG layer metalized through holes 10 is 1mm, and the longitudinal spacing is 1.1 mm; the aperture of the metallized through hole 11 of the SIW horn cavity is 0.3mm, the length of the equivalent rectangular metal waveguide is 2.2mm, and the maximum aperture of the horn is 5 mm; the aperture of the longitudinal metalized via hole 12 of the radiation layer is 0.2mm, the pitch-to-pitch ratio is 0.5, the aperture of the transverse metalized via hole 13 of the radiation layer is 0.2mm, and the pitch-to-pitch ratio is 0.67.
As shown in fig. 7, in the millimeter wave SIW horn antenna loaded with the EBG surface provided by the present embodiment, the reflection coefficient of the antenna is less than-10 dB and the impedance bandwidth reaches 5.7% in the 33.8-35.8GHz working frequency band; in the 34.2-35.4GHz working frequency band, the antenna is well matched with the transmission line, and the reflection coefficient of the antenna is basically lower than-20 dB.
As shown in fig. 8, the millimeter wave SIW horn antenna loaded with the EBG surface according to the present embodiment has an antenna gain of 5.5dBi at the center operating frequency of 34GHz, and the EBG surface well eliminates the backward radiation of the antenna, and the antenna has a low back lobe characteristic and a front-to-back ratio of 16 dB.
As shown in fig. 9, the millimeter wave SIW horn antenna loaded with the EBG surface according to the present embodiment has an antenna gain of 5.5dBi at a center operating frequency of 35GHz, and the EBG surface well eliminates the backward radiation of the antenna, and the antenna has a low back lobe characteristic and a front-to-back ratio of 16 dB.
Based on the improvement of the traditional SIW horn antenna, the invention provides the EBG surface-loaded millimeter-wave-based high-front-to-back-ratio and high-gain small-caliber horn antenna structure, which realizes 5% of relative bandwidth while the caliber size is close to the wavelength of 0.6 central working frequency, and further improves the front-to-back ratio of the end-fire horn antenna, so that the antenna can be applied to a scanning array, and has the advantages of low profile, simple structure, easiness in processing and convenience in integration with an active circuit.
Although the present invention has been described in terms of the preferred embodiment, it is not intended that the invention be limited to the embodiment. Any equivalent changes or modifications made without departing from the spirit and scope of the present invention also belong to the protection scope of the present invention. The scope of the invention should therefore be determined with reference to the appended claims.
Claims (10)
1. A millimeter wave SIW horn antenna loaded with an EBG surface is characterized by comprising an upper EBG layer metal plate (4), an upper EBG layer dielectric substrate (1), an upper radiation layer metal plate (5), a radiation layer dielectric substrate (2), a lower radiation layer metal plate (6), a lower EBG layer dielectric substrate (3) and a lower EBG layer metal plate (7) which are sequentially pressed together, a feed layer metal plate (8) coplanar and interconnected with the upper radiation layer metal plate (5), and a feed layer metal ground (9) coplanar and interconnected with the lower radiation layer metal plate (6);
a metal patch array is distributed on the upper EBG layer metal plate (4); the metalized through hole (10) penetrates through the upper EBG layer metal plate (4) and the upper EBG layer dielectric substrate (1) to form a through hole array, and the center of the metalized through hole (10) is consistent with the center of the corresponding metal patch;
the lower EBG layer metal plate (7) and the upper EBG layer metal plate (4) have the same structure, and the lower EBG layer dielectric substrate (3) and the upper EBG layer dielectric substrate (1) have the same structure;
a plurality of SIW horn cavity metallized through holes (11) penetrate through the upper radiation layer metal plate (5), the lower radiation layer metal plate (6) and the radiation layer medium substrate (2), and are distributed by gradually and symmetrically opening towards two outer sides from one side of the upper radiation layer metal plate (5) which is interconnected with the feed layer metal plate (8) to the other side of the upper radiation layer metal plate (5) to form a rectangular metal waveguide.
2. The millimeter wave SIW horn antenna loaded with the EBG surface according to claim 1, wherein the upper EBG layer dielectric substrate (1), the radiation layer dielectric substrate (2) and the lower EBG layer dielectric substrate (3) are made of L TCC (cross-linking transmission coefficient) plates or PTEE (polytetrafluoroethylene) microwave plates.
3. The EBG surface-loaded millimeter-wave SIW horn antenna of claim 1, wherein the array of metal patches is comprised of rectangular metal patches.
4. The EBG surface-loaded millimeter wave SIW horn antenna of claim 3, wherein the rectangular metal patches are equal in side length.
5. The millimeter wave SIW horn antenna loaded with EBG surfaces as claimed in claim 4, wherein the upper EBG layer metal plate (4) is divided into rectangular metal patch arrays by the rectangular transverse grooves and the rectangular longitudinal grooves etched on the upper EBG layer metal plate, the groove width is less than 0.06 wavelength of the central operating frequency, and the side length of the rectangular metal patch is 0.08 wavelength of the central operating frequency.
6. The millimeter wave SIW horn antenna with the EBG-loaded surface according to claim 1, wherein the SIW horn cavity metalized vias (11) are two rows of metalized vias symmetrically distributed along the central axis.
7. The EBG surface-loaded millimeter wave (SIW) horn antenna of claim 6, wherein the SIW horn cavity metalized via (11) has an aperture smaller than 0.1 wavelength of center operating frequency; the minimum distance between the centers of the two rows of SIW horn cavity metalized through holes (11) is more than 0.2 wavelength of central working frequency and less than 0.4 wavelength of central working frequency; the maximum distance between the centers of the two rows of SIW horn cavity metallized through holes (11) at the opening end of the horn is smaller than the wavelength of 1 central working frequency.
8. The millimeter wave SIW horn antenna loaded with the EBG surface according to claim 1, wherein a row of longitudinal metalized through holes (12) of the radiation layer are distributed on the central axis of the metalized through holes (11) of the SIW horn cavity, and penetrate through the metal plate (5) of the upper radiation layer, the metal plate (6) of the lower radiation layer and the dielectric substrate (2) of the radiation layer.
9. The millimeter wave SIW horn antenna loaded with the EBG surface according to claim 8, wherein a row of radiation layer transverse metallized through holes (13) are further distributed on two sides of the central axis of the SIW horn cavity metallized through hole (11) and penetrate through the upper radiation layer metal plate (5), the lower radiation layer metal plate (6) and the radiation layer dielectric substrate (2); the radiation layer longitudinal metalized via (12) and the radiation layer transverse metalized via (13) are perpendicular to each other.
10. The EBG surface-loaded millimeter wave SIW horn antenna of claim 9, wherein the apertures of the radiating layer longitudinal metalized via (12) and the radiating layer transverse metalized via (13) are less than 0.1 wavelength of center operating frequency.
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| CN112886160A (en) * | 2021-01-14 | 2021-06-01 | 中国电子科技集团公司第五十五研究所 | Compact substrate integrated waveguide filter based on silicon-based MEMS (micro-electromechanical systems) process |
| CN112886160B (en) * | 2021-01-14 | 2021-11-30 | 中国电子科技集团公司第五十五研究所 | Compact substrate integrated waveguide filter based on silicon-based MEMS (micro-electromechanical systems) process |
| CN113363696A (en) * | 2021-05-18 | 2021-09-07 | 杭州电子科技大学 | Planar integrated millimeter wave series-fed horn array with filtering characteristic |
| CN113363696B (en) * | 2021-05-18 | 2022-07-01 | 杭州电子科技大学 | Planar integrated millimeter wave series-fed horn array with filtering characteristic |
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| CN113690603A (en) * | 2021-08-23 | 2021-11-23 | 安徽大学 | Millimeter wave antenna |
| CN113690603B (en) * | 2021-08-23 | 2023-07-14 | 安徽大学 | Millimeter wave antenna |
| CN113922079A (en) * | 2021-11-19 | 2022-01-11 | 南京邮电大学 | Novel H face SIW horn antenna based on super surface unit |
| CN114007294A (en) * | 2021-11-19 | 2022-02-01 | 北京航空航天大学 | Excitation device for uniform field distribution of radiation type surface wave |
| CN114007294B (en) * | 2021-11-19 | 2022-10-14 | 北京航空航天大学 | Excitation device for uniform field distribution of radiation type surface wave |
| CN113922079B (en) * | 2021-11-19 | 2023-09-26 | 南京邮电大学 | Novel H-plane SIW horn antenna based on super-surface unit |
| KR102384943B1 (en) * | 2021-12-14 | 2022-04-12 | 한국해양과학기술원 | Surface wave generator for communication that using ship metal as medium |
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