CN111362705A - 一种多孔氮化硅陶瓷及其制备方法 - Google Patents

一种多孔氮化硅陶瓷及其制备方法 Download PDF

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CN111362705A
CN111362705A CN202010195013.4A CN202010195013A CN111362705A CN 111362705 A CN111362705 A CN 111362705A CN 202010195013 A CN202010195013 A CN 202010195013A CN 111362705 A CN111362705 A CN 111362705A
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silicon nitride
porous silicon
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杜建周
艾多梅
王路明
钟栋青
王上
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Abstract

本发明公开了一种多孔氮化硅陶瓷及其制备方法,所述制备方法具体如下:按重量份将50~90份的氮化硅、1~30份的聚苯乙烯、1~30份的SiO2‑CaO‑MgO玻璃料和1~10份聚乙烯醇缩丁醛(PVB)混合后,以无水乙醇为溶剂,球磨得到陶瓷浆料,干燥后研磨得到陶瓷粉体,压制成型制成素坯,在通入保护气氛的高压烧结炉中先排胶后烧结,得到陶瓷坯体。本发明的制备方法简单,制得的多孔氮化硅陶瓷具备气孔分布均匀性好、气孔率高、强度高的特点,可制成形状复杂的制品。

Description

一种多孔氮化硅陶瓷及其制备方法
技术领域
本发明属于陶瓷材料领域,具体涉及一种多孔氮化硅陶瓷及其制备方法。
背景技术
随着科技的发展进步,轻、重工业发展都较为迅速,工厂排放大量气体,这些气体中夹杂着大量粉尘颗粒,造成了严重的空气污染,空气质量下降,对人们的日常生活造成很大影响。据不完全统计,我国工业用煤每年大约消耗两亿吨,排放出的烟气大约有一亿吨,不但造成了环境污染,还会使大量热源得不到有效的利用,造成浪费。因此,对高温气体进行处理不但可以保护环境,还可以实现资源的二次利用,实现可持续化发展。
多孔氮化硅陶瓷兼具了多孔陶瓷和氮化硅陶瓷的特性,具有高强度、耐腐蚀、体积密度小、比表面积大及独特的物理表面特性,对液体和气体介质有选择透过性,在高温、高速、强腐蚀介质的工作环境中具有特殊的使用价值,过滤面积大,过滤效率高,因此可以很好地应用于烟气处理。
添加造孔剂法成本低,应用广泛,可以制备不同孔径的多孔陶瓷,是最常见的方法。但是,现有技术中实验所需的烧结温度较高、制得的陶瓷样品气孔率低且分布不均匀。
发明内容
针对现有技术的不足,本发明提供一种多孔氮化硅陶瓷及其制备方法,能够降低烧结温度,以聚苯乙烯为造孔剂,添加适量的低温玻璃粉,制得的气孔为通孔,且具有分布均匀、孔隙率高等特点。
本发明是通过以下技术方案实现的:
一种多孔氮化硅陶瓷,由以下原料按重量份组成:50~90份氮化硅、1~30份的聚苯乙烯、1~30份的SiO2-CaO-MgO玻璃料、1~10份聚乙烯醇缩丁醛,其中,所述氮化硅为形态呈棒状的β相的氮化硅结晶形态,其粒径范围为1~50μm,纯度为95~99.99%。
优选地,所述聚苯乙烯为颗粒状,其粒径范围为1~100μm,纯度为95~99.99%。
优选地,所述SiO2-CaO-MgO玻璃料的平均粒径为10μm。
一种多孔氮化硅陶瓷的制备方法,包括以下步骤:
步骤1)将氮化硅、聚苯乙烯、SiO2-CaO-MgO玻璃料、聚乙烯醇缩丁醛按重量份称取后混合,分散于无水乙醇溶剂中进行球磨得到陶瓷浆料,再干燥后研磨得到陶瓷粉体;
步骤2)将步骤1)制得的陶瓷粉体压制成型制成素坯;
步骤3)在保护气氛条件下,将步骤2)制得的素坯置于高压烧结炉中先排胶后烧结,得到陶瓷坯体。
优选地,步骤1)所述干燥为真空干燥,温度为50~80℃。
优选地,步骤2)所述压制成型的压力为2~5MPa,时间为0~10s。
优选地,步骤3)所述保护气氛为氮气气氛。
优选地,步骤3)所述排胶的温度为400~500℃,时间为1~5h。
优选地,步骤3)所述烧结的温度为600~900℃,时间为1~3h。
本发明的有益效果如下:
本发明采用常压烧结法制备多孔氮化硅陶瓷,以具有棒状结构的β相氮化硅为原料,以聚苯乙烯为造孔剂,添加低温玻璃粉,配合少量的粘结剂进行烧结,利用造孔剂在原料中占据一定的空间,经过高温烧结,造孔剂分解生成气体,离开坯体形成孔洞。制备得到了气孔分布均匀性好、气孔率高、强度高的多孔氮化硅陶瓷。该制备方法无需对原料进行处理,生产成本便宜,工艺过程简便,生产周期短;制备过程中添加了低温玻璃粉,可以降低烧结温度,玻璃料经过高温熔化后具有粘结作用,能够支撑坯体,减少裂纹的产生。
附图说明
图1为实施例3的多孔氮化硅陶瓷的XRD图与氮化硅标准PDF卡片的比对;
图2为实施例3的多孔氮化硅陶瓷烧结后试样的SEM图(500μm);
图3为实施例3的多孔氮化硅陶瓷烧结后试样的SEM图(5μm)。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚,下面将对本发明实施例中的技术方案进行清楚、完整地描述。实施例中未注明具体条件者,按照常规条件或制造商建议的条件进行。所用试剂或仪器未注明生产厂商者,均为可以通过市售购买获得的常规产品。
一种多孔氮化硅陶瓷,由以下原料按重量份组成:50~90份氮化硅、1~30份的聚苯乙烯、1~30份的SiO2-CaO-MgO玻璃料、1~10份聚乙烯醇缩丁醛(PVB)。
在本发明的具体的实施例中,所述氮化硅为形态呈棒状的β相的氮化硅结晶形态,其粒径范围为1~50μm,平均粒径为10μm,纯度为95~99.99%;所述聚苯乙烯造孔剂为颗粒状,其粒径范围为1~100μm,平均粒径为30μm,纯度为95~99.99%;所述SiO2-CaO-MgO玻璃料的平均粒径为10μm。
进一步地,为了保证原料的成分混合,使成孔剂均匀分布,从而保障烧结过程中成孔的均匀性,在本发明的具体的实施例中,原料的均匀混合操作包括以下步骤:
(1)将氮化硅、聚苯乙烯、SiO2-CaO-MgO玻璃料、PVB按重量份称取后混合,分散于无水乙醇溶剂中进行球磨得到陶瓷浆料,将浆料取出后烘干,将干燥的粉体研磨,过100目筛,得到陶瓷粉体。
进一步地,上述球磨的转速为150~200r/min,球磨的时间为2~6h。
进一步地,上述干燥过程是在真空条件下进行的,温度为50~80℃,防止氮化硅氧化,得到相对干燥的陶瓷粉体。
(2)将(1)制得的陶瓷粉体压制成型制成素坯,成型压力为2~5MPa,时间为0~10s。
(3)在氮气气氛的条件下,将(2)制得的素坯置于高压烧结炉中,在400~500℃下排胶1~5h,接着再以1~2℃/min的速率升温至600~900℃烧结1~3h,得到陶瓷坯体。
本发明的制备方法为常压烧结法,工艺的制定是出于以下的考虑:通过改变聚苯乙烯和SiO2-CaO-MgO玻璃料的掺杂量可以改变气孔率和抗折强度,调控出合适的掺杂量,可以使多孔陶瓷的力学性能达到最优。采用的常压烧结法制备,使得制备的产物均为棒状β-Si3N4颗粒。
下面结合附图与实施例对本发明的特征和性能作进一步详细描述。
实施例1
一种多孔氮化硅陶瓷的制备方法,包括以下步骤:
(1)将70g氮化硅、10g聚苯乙烯、15g SiO2-CaO-MgO玻璃料、5g PVB称取后混合,分散于无水乙醇溶剂中,氧化铝磨球为介质,以180r/min的转速,在球磨罐中球磨4h,得到陶瓷浆料;将浆料取出后进行真空干燥,温度设置在70℃,彻底烘干后将粉体研磨,过100目筛,得到陶瓷粉体。
(2)将(1)制得的陶瓷粉体压制成型制成素坯,成型压力为2MPa,时间为0~10s。
(3)将(2)制得的素坯置于坩埚中,在氮气气氛的条件下,将坩埚置于高压烧结炉中,在500℃下排胶4h,接着再以1~2℃/min的速率升温至700℃烧结3h,得到陶瓷坯体。
实施例2
一种多孔氮化硅陶瓷的制备方法,包括以下步骤:
(1)将65g氮化硅、15g聚苯乙烯、15g SiO2-CaO-MgO玻璃料、5g PVB称取后混合,分散于无水乙醇溶剂中,氧化铝磨球为介质,以180r/min的转速,在球磨罐中球磨4h,得到陶瓷浆料;将浆料取出后进行真空干燥,温度设置在70℃,彻底烘干后将粉体研磨,过100目筛,得到陶瓷粉体。
(2)将(1)制得的陶瓷粉体压制成型制成素坯,成型压力为2MPa,时间为0~10s。
(3)将(2)制得的素坯置于坩埚中,在氮气气氛的条件下,将坩埚置于高压烧结炉中,在500℃下排胶4h,接着再以1~2℃/min的速率升温至700℃烧结3h,得到陶瓷坯体。
实施例3
一种多孔氮化硅陶瓷的制备方法,包括以下步骤:
(1)将60g氮化硅、20g聚苯乙烯、15g SiO2-CaO-MgO玻璃料、5g PVB称取后混合,分散于无水乙醇溶剂中,氧化铝磨球为介质,以180r/min的转速,在球磨罐中球磨4h,得到陶瓷浆料;将浆料取出后进行真空干燥,温度设置在70℃,彻底烘干后将粉体研磨,过100目筛,得到陶瓷粉体。
(2)将(1)制得的陶瓷粉体压制成型制成素坯,成型压力为3MPa,时间为0~10s。
(3)将(2)制得的素坯置于坩埚中,在氮气气氛的条件下,将坩埚置于高压烧结炉中,在500℃下排胶4h,接着再以1~2℃/min的速率升温至700℃烧结3h,得到陶瓷坯体。
实施例4
一种多孔氮化硅陶瓷的制备方法,包括以下步骤:
(1)将55g氮化硅、25g聚苯乙烯、15g SiO2-CaO-MgO玻璃料、5g PVB称取后混合,分散于无水乙醇溶剂中,氧化铝磨球为介质,以180r/min的转速,在球磨罐中球磨4h,得到陶瓷浆料;将浆料取出后进行真空干燥,温度设置在70℃,彻底烘干后将粉体研磨,过100目筛,得到陶瓷粉体。
(2)将(1)制得的陶瓷粉体压制成型制成素坯,成型压力为3MPa,时间为0~10s。
(3)将(2)制得的素坯置于坩埚中,在氮气气氛的条件下,将坩埚置于高压烧结炉中,在500℃下排胶4h,接着再以1~2℃/min的速率升温至750℃烧结3h,得到陶瓷坯体。
实施例5
一种多孔氮化硅陶瓷的制备方法,包括以下步骤:
(1)将75g氮化硅、15g聚苯乙烯、5g SiO2-CaO-MgO玻璃料、5g PVB称取后混合,分散于无水乙醇溶剂中,氧化铝磨球为介质,以180r/min的转速,在球磨罐中球磨4h,得到陶瓷浆料;将浆料取出后进行真空干燥,温度设置在70℃,彻底烘干后将粉体研磨,过100目筛,得到陶瓷粉体。
(2)将(1)制得的陶瓷粉体压制成型制成素坯,成型压力为2MPa,时间为0~10s。
(3)将(2)制得的素坯置于坩埚中,在氮气气氛的条件下,将坩埚置于高压烧结炉中,在500℃下排胶4h,接着再以1~2℃/min的速率升温至750℃烧结3h,得到陶瓷坯体。
实施例6
一种多孔氮化硅陶瓷的制备方法,包括以下步骤:
(1)将70g氮化硅、15g聚苯乙烯、10g SiO2-CaO-MgO玻璃料、5g PVB称取后混合,分散于无水乙醇溶剂中,氧化铝磨球为介质,以180r/min的转速,在球磨罐中球磨4h,得到陶瓷浆料;将浆料取出后进行真空干燥,温度设置在70℃,彻底烘干后将粉体研磨,过100目筛,得到陶瓷粉体。
(2)将(1)制得的陶瓷粉体压制成型制成素坯,成型压力为3MPa,时间为0~10s。
(3)将(2)制得的素坯置于坩埚中,在氮气气氛的条件下,将坩埚置于高压烧结炉中,在500℃下排胶4h,接着再以1~2℃/min的速率升温至750℃烧结3h,得到陶瓷坯体。
实施例7
一种多孔氮化硅陶瓷的制备方法,包括以下步骤:
(1)将65g氮化硅、15g聚苯乙烯、15g SiO2-CaO-MgO玻璃料、5g PVB称取后混合,分散于无水乙醇溶剂中,氧化铝磨球为介质,以180r/min的转速,在球磨罐中球磨4h,得到陶瓷浆料;将浆料取出后进行真空干燥,温度设置在70℃,彻底烘干后将粉体研磨,过100目筛,得到陶瓷粉体。
(2)将(1)制得的陶瓷粉体压制成型制成素坯,成型压力为2MPa,时间为0~10s。
(3)将(2)制得的素坯置于坩埚中,在氮气气氛的条件下,将坩埚置于高压烧结炉中,在500℃下排胶4h,接着再以1~2℃/min的速率升温至800℃烧结3h,得到陶瓷坯体。
实施例8
一种多孔氮化硅陶瓷的制备方法,包括以下步骤:
(1)将60g氮化硅、15g聚苯乙烯、20g SiO2-CaO-MgO玻璃料、5g PVB称取后混合,分散于无水乙醇溶剂中,氧化铝磨球为介质,以180r/min的转速,在球磨罐中球磨4h,得到陶瓷浆料;将浆料取出后进行真空干燥,温度设置在70℃,彻底烘干后将粉体研磨,过100目筛,得到陶瓷粉体。
(2)将(1)制得的陶瓷粉体压制成型制成素坯,成型压力为4MPa,时间为0~10s。
(3)将(2)制得的素坯置于坩埚中,在氮气气氛的条件下,将坩埚置于高压烧结炉中,在500℃下排胶4h,接着再以1~2℃/min的速率升温至750℃烧结3h,得到陶瓷坯体。
实施例9
一种多孔氮化硅陶瓷的制备方法,包括以下步骤:
(1)将55g氮化硅、15g聚苯乙烯、25g SiO2-CaO-MgO玻璃料、5g PVB称取后混合,分散于无水乙醇溶剂中,氧化铝磨球为介质,以180r/min的转速,在球磨罐中球磨4h,得到陶瓷浆料;将浆料取出后进行真空干燥,温度设置在70℃,彻底烘干后将粉体研磨,过100目筛,得到陶瓷粉体。
(2)将(1)制得的陶瓷粉体压制成型制成素坯,成型压力为4MPa,时间为0~10s。
(3)将(2)制得的素坯置于坩埚中,在氮气气氛的条件下,将坩埚置于高压烧结炉中,在500℃下排胶4h,接着再以1~2℃/min的速率升温至800℃烧结3h,得到陶瓷坯体。
测试例1
由实施例1~9的制备方法获得的多孔氮化硅陶瓷,采用阿基米德排水法测试该多孔氮化硅陶瓷的密度和气孔率;采用三点式弯曲法测试该多孔氮化硅陶瓷的抗折强度;采用X射线衍射仪分析烧结体的物相组成;采用扫描电子显微镜观察该多孔氮化硅陶瓷的断面的显微结构。这些密度、气孔率和抗折强度的性能结果如表1所示。
表1 多孔氮化硅陶瓷的性能
Figure BDA0002417280150000071
由表1可以看出不同的原料配比、成型压力和烧结温度可以制备出气孔率为25%~60%,强度为10~30MPa的多孔氮化硅陶瓷,且烧结温度大大降低。
图1为实施例3所获得的多孔氮化硅的XRD图。如图1所示,经过烧结后,所获得的相为单一的β-Si3N4,几乎没有杂相产生。
图2、图3为实施例3所获得的多孔氮化硅的扫描电镜图。如图2、图3所示,其气孔分布均匀,气孔孔径大小均匀,约为30μm;晶须生长较长,晶粒大多为片状,有很明显的柱状结构。
以上所描述的实施例是本发明一部分实施例,而不是全部的实施例。本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围,而是仅仅表示本发明的选定实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。

Claims (9)

1.一种多孔氮化硅陶瓷,其特征在于,由以下原料按重量份组成:50~90份氮化硅、1~30份的聚苯乙烯、1~30份的SiO2-CaO-MgO玻璃料、1~10份聚乙烯醇缩丁醛,其中,所述氮化硅为形态呈棒状的β相的氮化硅结晶形态,其粒径范围为1~50μm,纯度为95~99.99%。
2.根据权利要求1所述的一种多孔氮化硅陶瓷,其特征在于,所述聚苯乙烯为颗粒状,其粒径范围为1~100μm,纯度为95~99.99%。
3.根据权利要求1所述的一种多孔氮化硅陶瓷,其特征在于,所述SiO2-CaO-MgO玻璃料的平均粒径为10μm。
4.权利要求1所述的一种多孔氮化硅陶瓷的制备方法,其特征在于,包括以下步骤:
步骤1)将氮化硅、聚苯乙烯、SiO2-CaO-MgO玻璃料、聚乙烯醇缩丁醛按重量份称取后混合,分散于无水乙醇溶剂中进行球磨得到陶瓷浆料,再干燥后研磨得到陶瓷粉体;
步骤2)将步骤1)制得的陶瓷粉体压制成型制成素坯;
步骤3)在保护气氛条件下,将步骤2)制得的素坯置于高压烧结炉中先排胶后烧结,得到陶瓷坯体。
5.根据权利要求4所述的多孔氮化硅陶瓷的制备方法,其特征在于,步骤1)所述干燥为真空干燥,温度为50~80℃。
6.根据权利要求4所述的多孔氮化硅陶瓷的制备方法,其特征在于,步骤2)所述压制成型的压力为2~5MPa,时间为0~10s。
7.根据权利要求4所述的多孔氮化硅陶瓷的制备方法,其特征在于,步骤3)所述保护气氛为氮气气氛。
8.根据权利要求4所述的多孔氮化硅陶瓷的制备方法,其特征在于,步骤3)所述排胶的温度为400~500℃,时间为1~5h。
9.根据权利要求4所述的多孔氮化硅陶瓷的制备方法,其特征在于,步骤3)所述烧结的温度为600~900℃,时间为1~3h。
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