CN111341739B - 一种封装构件及其制备方法 - Google Patents
一种封装构件及其制备方法 Download PDFInfo
- Publication number
- CN111341739B CN111341739B CN202010141451.2A CN202010141451A CN111341739B CN 111341739 B CN111341739 B CN 111341739B CN 202010141451 A CN202010141451 A CN 202010141451A CN 111341739 B CN111341739 B CN 111341739B
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- China
- Prior art keywords
- heat dissipation
- holes
- metal conductive
- forming
- dissipation substrate
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 41
- 238000002360 preparation method Methods 0.000 title abstract description 5
- 229910052751 metal Inorganic materials 0.000 claims abstract description 46
- 239000002184 metal Substances 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 230000017525 heat dissipation Effects 0.000 claims abstract description 35
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000000084 colloidal system Substances 0.000 claims abstract description 26
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- 238000007731 hot pressing Methods 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 5
- 230000000149 penetrating effect Effects 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 19
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000003825 pressing Methods 0.000 claims description 8
- 238000003475 lamination Methods 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000002131 composite material Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 3
- 229920005989 resin Polymers 0.000 claims description 3
- 239000011347 resin Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 2
- 239000008393 encapsulating agent Substances 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 33
- 229910000679 solder Inorganic materials 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010141451.2A CN111341739B (zh) | 2020-03-03 | 2020-03-03 | 一种封装构件及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010141451.2A CN111341739B (zh) | 2020-03-03 | 2020-03-03 | 一种封装构件及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111341739A CN111341739A (zh) | 2020-06-26 |
CN111341739B true CN111341739B (zh) | 2021-09-28 |
Family
ID=71187163
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010141451.2A Active CN111341739B (zh) | 2020-03-03 | 2020-03-03 | 一种封装构件及其制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN111341739B (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112236025B (zh) * | 2020-12-09 | 2021-03-16 | 武汉大学 | 高温电路器件的加工方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103633053A (zh) * | 2012-08-27 | 2014-03-12 | 美的集团股份有限公司 | 一种智能功率模块及其制造方法 |
CN104064530A (zh) * | 2013-03-21 | 2014-09-24 | 矽品精密工业股份有限公司 | 半导体封装件及其制法 |
CN204680661U (zh) * | 2015-07-01 | 2015-09-30 | 四川广义微电子股份有限公司 | Igbt芯片散热包围模块 |
-
2020
- 2020-03-03 CN CN202010141451.2A patent/CN111341739B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103633053A (zh) * | 2012-08-27 | 2014-03-12 | 美的集团股份有限公司 | 一种智能功率模块及其制造方法 |
CN104064530A (zh) * | 2013-03-21 | 2014-09-24 | 矽品精密工业股份有限公司 | 半导体封装件及其制法 |
CN204680661U (zh) * | 2015-07-01 | 2015-09-30 | 四川广义微电子股份有限公司 | Igbt芯片散热包围模块 |
Also Published As
Publication number | Publication date |
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CN111341739A (zh) | 2020-06-26 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210910 Address after: A1902, building 1, Shenzhen software industry base, No. 81, 83 and 85, Gaoxin South 10th Road, Binhai community, Yuehai street, Nanshan District, Shenzhen, Guangdong 518000 Applicant after: Shenzhen faben Electronics Co.,Ltd. Address before: 230000 group 1, Jiming village, Baishan Town, Lujiang County, Hefei City, Anhui Province Applicant before: Zhang Zheng |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address | ||
CP03 | Change of name, title or address |
Address after: 518061 a1902, building 1, Shenzhen software industry base, No. 81, 83 and 85, Gaoxin South 10th Road, Binhai community, Yuehai street, Nanshan District, Shenzhen, Guangdong Patentee after: Shenzhen faben Electronics Co.,Ltd. Address before: A1902, building 1, Shenzhen software industry base, No. 81, 83 and 85, Gaoxin South 10th Road, Binhai community, Yuehai street, Nanshan District, Shenzhen, Guangdong 518000 Patentee before: Shenzhen faben Electronics Co.,Ltd. |
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TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20221209 Address after: C1321, Innovation Plaza, No. 2007, Pingshan Avenue, Liulian Community, Pingshan Street, Pingshan District, Shenzhen, Guangdong 518117 Patentee after: Shenzhen zhinuo Microelectronics Co.,Ltd. Address before: 518061 a1902, building 1, Shenzhen software industry base, No. 81, 83 and 85, Gaoxin South 10th Road, Binhai community, Yuehai street, Nanshan District, Shenzhen, Guangdong Patentee before: Shenzhen faben Electronics Co.,Ltd. |