CN204680661U - Igbt芯片散热包围模块 - Google Patents

Igbt芯片散热包围模块 Download PDF

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CN204680661U
CN204680661U CN201520462652.7U CN201520462652U CN204680661U CN 204680661 U CN204680661 U CN 204680661U CN 201520462652 U CN201520462652 U CN 201520462652U CN 204680661 U CN204680661 U CN 204680661U
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plastic
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王建全
彭彪
张干
王作义
崔永明
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SICHUAN GENERALIZED MICROELECTRONICS Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]

Abstract

本实用新型公开了IGBT芯片散热包围模块，包括IGBT模块，IGBT模块的底部通过焊接层B连接在导热硅脂基板上，导热硅脂基板远离IGBT模块的一侧安装在底部散热器上；还包括塑封体，塑封体为两端开口的管状体，IGBT模块设置在塑封体的空腔内，导热硅脂基板封闭塑封体的下端开口，还包括导热陶瓷基板，导热陶瓷基板封闭塑封体的上端开口，还包括包围在IGBT模块四周填充在塑封体空腔内的导热硅胶填充体，导热陶瓷基板内嵌入有铝板，铝板设置有若干铝柱，铝柱延伸至导热硅胶填充体内。

Description

IGBT芯片散热包围模块
技术领域
    本实用新型涉及IGBT芯片，具体是具备导热功能的IGBT芯片散热包围模块。
背景技术
绝缘栅双极晶体管是兼有高输入阻抗和低导通压降的复合全控型电压驱动式功率半导体，非常适合于高电压的变流系统，如交流电机、变频器、牵引传动等领域。IGBT 封装材料要求具备优异的力学性能、电气绝缘特性、阻燃特性、耐老化特性及耐热特性，对I GBT的封装材料不要求具备其导热散热性，因此I GBT模块基本依赖于底部的散热器进行散热，因此，其散热效率是非常低下的，现有技术中对I GBT的散热设计主要研究对象是对IGBT的散热器进行研究，从而提高IGBT的散热效果。
实用新型内容
本实用新型的目的在于提供一种IGBT芯片散热包围模块，提出了一种可以从IGBT模块的上下两个方向进行散热，从而提升其散热效率。
本实用新型的目的主要通过以下技术方案实现：IGBT芯片散热包围模块，包括IGBT模块，IGBT模块的底部通过焊接层B连接在导热硅脂基板上，导热硅脂基板远离IGBT模块的一侧安装在底部散热器上；还包括塑封体，塑封体为两端开口的管状体，IGBT模块设置在塑封体的空腔内，导热硅脂基板封闭塑封体的下端开口，还包括导热陶瓷基板，导热陶瓷基板封闭塑封体的上端开口，还包括包围在IGBT模块四周填充在塑封体空腔内的导热硅胶填充体，导热陶瓷基板内嵌入有铝板，铝板设置有若干铝柱，铝柱延伸至导热硅胶填充体内。
上述结构的设计原理为：传统结构是采用塑封体将IGBT模块全部封装在其内部，IGBT模块底部通过安装散热器，因此这样的结构只会在IGBT模块底部通过散热器进行散热，其散热面积小，散热效率不高，往往需要借助外界的风机进行风冷散热。本实用新型通过管状的塑封体，并将导热陶瓷基板和导热硅脂基板分别设置在塑封体的上下两端，然后将IGBT模块放置在上述3个结构组成的封闭空腔内，并在该封闭的空腔内填充导热硅胶填充体，同时导热陶瓷基板内部镶嵌铝板，另外设置铝柱与铝板连接，并将铝柱插入导热硅胶填充体内，这样设置后，IGBT模块所产生的热量便会从导热硅脂基板和导热陶瓷基板处散热，形成上下都散热的结构，而IGBT模块所产生的热量首先通过导热硅胶填充体，再由导热硅胶填充体传导热量给铝柱，再由铝柱将热量传递给导热陶瓷基板进行散热处理，本实用新型利用铝柱和铝板的快速导热作用，再利用导热陶瓷基板的快速散热作用，达到快速而有效的散热，相比只采用导热陶瓷基板进行散热的方式，可以形成温差大的热交换，从而增加导热效率，其散热效率可以提高50%。而导热陶瓷基板和导热硅胶填充体均为不导电结构，因此其具备良好的绝缘性能。
优选的，所述IGBT模块包括从上到下依次层叠的IGBT芯片、焊接层A、铜板A、陶瓷基片、铜板C，铜板C通过焊接层B连接在导热硅脂基板上，还包括设置在陶瓷基片上的铜板B，铜板B通过绑定线与IGBT芯片连接。
优选的，导热陶瓷基板的厚度为0.5 cm至1cm。
优选的，导热陶瓷基板为BeO材料制成的陶瓷板或为SiC材料制成的陶瓷板。
本实用新型相比于现有技术具有如下有益效果：具备导热性能，提高其导热效果，得到具备优异力学性能、阻燃性能、耐侯性能、电气绝缘性能、导热性能的IGBT模块。
附图说明
图1为本实用新型侧剖视图。
图2为导热陶瓷基板和铝板的结构图。
图中的附图标记分别表示为：1、塑封体；11、导热陶瓷基板；12、铝板；13、铝柱；2、IGBT芯片；21、焊接层A；22、绑定线；23、铜板A；24、铜板B；25、陶瓷基片；26、铜板C；27、焊接层B；28、导热硅脂基板；29、底部散热器；3、导热硅胶填充体。
具体实施方式
下面结合实施例及附图对本实用新型作进一步的详细说明，但本实用新型的实施方式不限于此。
实施例1：
如图1、图2所示，IGBT芯片散热包围模块，包括以下部件：
IGBT芯片散热包围模块，包括IGBT模块，IGBT模块的底部通过焊接层B27连接在导热硅脂基板28上，导热硅脂基板28远离IGBT模块的一侧安装在底部散热器29上；还包括塑封体1，塑封体为两端开口的管状体，IGBT模块设置在塑封体的空腔内，导热硅脂基板28封闭塑封体的下端开口，还包括导热陶瓷基板11，导热陶瓷基板11封闭塑封体的上端开口，还包括包围在IGBT模块四周填充在塑封体空腔内的导热硅胶填充体3，导热陶瓷基板11内嵌入有铝板12，铝板12设置有若干铝柱13，铝柱13延伸至导热硅胶填充体3内。
上述结构的设计原理为：传统结构是采用塑封体将IGBT模块全部封装在其内部，IGBT模块底部通过安装散热器，因此这样的结构只会在IGBT模块底部通过散热器进行散热，其散热面积小，散热效率不高，往往需要借助外界的风机进行风冷散热。本实用新型通过管状的塑封体，并将导热陶瓷基板11和导热硅脂基板28分别设置在塑封体的上下两端，然后将IGBT模块放置在上述3个结构组成的封闭空腔内，并在该封闭的空腔内填充导热硅胶填充体3，同时导热陶瓷基板11内部镶嵌铝板，另外设置铝柱与铝板连接，并将铝柱插入导热硅胶填充体3内，这样设置后，IGBT模块所产生的热量便会从导热硅脂基板28和导热陶瓷基板11处散热，形成上下都散热的结构，而IGBT模块所产生的热量首先通过导热硅胶填充体3，再由导热硅胶填充体3传导热量给铝柱，再由铝柱将热量传递给导热陶瓷基板11进行散热处理，本实用新型利用铝柱和铝板的快速导热作用，再利用导热陶瓷基板11的快速散热作用，达到快速而有效的散热，相比只采用导热陶瓷基板11进行散热的方式，可以形成温差大的热交换，从而增加导热效率，其散热效率可以提高50%。而导热陶瓷基板11和导热硅胶填充体3均为不导电结构，因此其具备良好的绝缘性能。
优选的，所述IGBT模块包括从上到下依次层叠的IGBT芯片2、焊接层A21、铜板A23、陶瓷基片25、铜板C26，铜板C26通过焊接层B27连接在导热硅脂基板28上，还包括设置在陶瓷基片25上的铜板B24，铜板B24通过绑定线22与IGBT芯片2连接。
优选的，导热陶瓷基板11的厚度为0.5 cm至1cm。
优选的，导热陶瓷基板11为BeO材料制成的陶瓷板或为SiC材料制成的陶瓷板。
如上所述，则能很好的实现本实用新型。

Claims (4)

1.IGBT芯片散热包围模块，其特征在于：包括IGBT模块，IGBT模块的底部通过焊接层B（27）连接在导热硅脂基板（28）上，导热硅脂基板（28）远离IGBT模块的一侧安装在底部散热器（29）上；还包括塑封体（1），塑封体为两端开口的管状体，IGBT模块设置在塑封体的空腔内，导热硅脂基板（28）封闭塑封体的下端开口，还包括导热陶瓷基板（11），导热陶瓷基板（11）封闭塑封体的上端开口，还包括包围在IGBT模块四周填充在塑封体空腔内的导热硅胶填充体（3），导热陶瓷基板（11）内嵌入有铝板（12），铝板（12）设置有若干铝柱（13），铝柱（13）延伸至导热硅胶填充体（3）内。
2.根据权利要求1所述的IGBT芯片散热包围模块，其特征在于：所述IGBT模块包括从上到下依次层叠的IGBT芯片（2）、焊接层A（21）、铜板A（23）、陶瓷基片（25）、铜板C（26），铜板C（26）通过焊接层B（27）连接在导热硅脂基板（28）上，还包括设置在陶瓷基片（25）上的铜板B（24），铜板B（24）通过绑定线（22）与IGBT芯片（2）连接。
3.根据权利要求1所述的IGBT芯片散热包围模块，其特征在于：导热陶瓷基板（11）的厚度为0.5 cm至1cm。
4.根据权利要求1所述的IGBT芯片散热包围模块，其特征在于：导热陶瓷基板（11）为BeO材料制成的陶瓷板或为SiC材料制成的陶瓷板。
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111128981A (zh) * 2020-01-06 2020-05-08 珠海格力电器股份有限公司 一种igbt模块封装结构和封装方法
CN111341739A (zh) * 2020-03-03 2020-06-26 张正 一种封装构件及其制备方法
CN111341676A (zh) * 2020-03-03 2020-06-26 张正 一种半导体封装及其制备方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111128981A (zh) * 2020-01-06 2020-05-08 珠海格力电器股份有限公司 一种igbt模块封装结构和封装方法
CN111341739A (zh) * 2020-03-03 2020-06-26 张正 一种封装构件及其制备方法
CN111341676A (zh) * 2020-03-03 2020-06-26 张正 一种半导体封装及其制备方法
CN111341739B (zh) * 2020-03-03 2021-09-28 深圳市法本电子有限公司 一种封装构件及其制备方法

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