CN111326611B - 一种iii族氮化物半导体发光器件台面刻蚀方法 - Google Patents
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Abstract
本发明公开了一种III族氮化物半导体发光器件台面刻蚀方法，包括以下步骤，首先在衬底上外延生长缓冲层，并刻蚀缓冲层得到图形化缓冲层衬底，在所述图形化缓冲层衬底上外延生长具有横向极性结构的发光器件外延层，所述横向极性结构包括氮极性畴与金属极性畴；然后采用湿法刻蚀工艺利用氮极性畴与金属极性畴在刻蚀液中表现出的惰性差异对非惰性极性畴进行刻蚀；本发明可获得无等离子体损伤的器件台面；提升III族氮化物发光器件转换效率，降低制造成本。
Description
技术领域
本发明涉及半导体发光器件制备技术领域，具体讲是一种III族氮化物半导体发光器件台面刻蚀方法。
背景技术
Ⅲ族氮化物发光器件如LED，激光二极管等作为新一代固态光源，具有体积小，功耗低以及寿命长等特点，在通用照明、图像显示、激光存储、空气污水净化、生物质检测等领域具有广阔的应用前景，是替代传统白炽灯、日光灯以及高压汞灯紫外光源的最佳方案。传统横向氮化物基发光器件的制备包括薄膜外延、台面刻蚀、电极沉积、钝化处理、封装测试等步骤。其中重要的环节之一为发光器件的台面刻蚀。通过刻蚀去除部分 p型电流扩展层以及有源区，制作n型台面，从而便于沉积金属，制作n型层电极。
目前应用于Ⅲ族氮化物LED台面刻蚀工艺有两种：干法刻蚀和湿法刻蚀。干法刻蚀中的反应离子刻蚀常用于Ⅲ族氮化物器件结构的制备。反应离子刻蚀的优点在于良好的方向性、具有超高精细加工能力和较好的一致性和重复性。然而也存在加工成本高、刻蚀深度难以精确控制和损伤大的缺陷。这一过程对刻蚀的侧壁和底部都会造成不同程度的损伤，侧壁的损伤会直接影响LED及激光二极管的正常发光，以及形成漏电通道，降低发光效率，同时增大器件的反向漏电流；底部的损伤会恶化金属半导体的欧姆接触，形成较大的接触电阻，阻碍LED及激光二极管的正常发光。
与干法刻蚀相比，湿法刻蚀对器件损伤小，但对于器件的刻蚀强烈依赖于氮化物薄膜的极性。传统Ⅲ族氮化物发光器件主要基于金属极性生长。金属极性Ⅲ族氮化物对各种酸性、碱性刻蚀液表现出较大惰性。而相反的，氮极性Ⅲ族氮化物薄膜刻蚀速率较高。虽然传统的湿法刻蚀具有简单可控，晶格损伤较小、成本低廉的优势，但是刻蚀具有各向同性的特点，因此很难得到垂直的氮化物侧壁从而制造台面。
发明内容
本发明所要解决的技术问题是，克服以上现有技术的缺点：提供一种III族氮化物半导体发光器件台面刻蚀方法，将湿法刻蚀工艺用于Ⅲ族氮化物发光器件的制备，可实现高效制备垂直的氮化物侧壁。本发明利用金属极性晶体质量高、表面形貌平整的优势获得有源层的同时利用氮极性晶体易湿法刻蚀的特点获得无等离子体损伤的器件台面；提升III族氮化物发光器件转换效率，降低制造成本。
本发明的技术解决方案如下：一种III族氮化物半导体发光器件台面刻蚀方法，包括以下步骤：首先在衬底上外延生长缓冲层，并刻蚀缓冲层得到图形化缓冲层衬底，在所述图形化缓冲层衬底上外延生长具有横向极性结构的发光器件外延层，所述横向极性结构包括氮极性畴与金属极性畴；然后采用湿法刻蚀工艺利用氮极性畴与金属极性畴在刻蚀液中表现出的惰性差异对非惰性极性畴进行刻蚀。由于氮极性畴与金属极性畴具有清晰垂直的界面，因此湿法刻蚀后能形成陡峭、垂直的氮化物侧壁。
较佳地，所述衬底为蓝宝石衬底、SiC衬底、Si衬底中的一种。
较佳地，所述缓冲层为Al（x）Ga（1-x）N缓冲层中的一种，其中0≤x≤1。
所述发光器件外延层包括n型电流扩展层、有源层、p型电流扩展层。
较佳地，所述发光器件外延层包括应力释放层、n型电流扩展层、有源层、p型电流扩展层。应力释放层厚度为100 nm -5 um。n型电流扩展层厚度为100 nm- 5 um，优选为500nm。p型电流扩展层厚度20 nm- 2 um，优选 200 nm。
较佳地，所述有源层由量子阱层和电子阻挡层组成，所述应力释放层为GaN、AlN或AlGaN应力释放层中的一种。如果制备激光二极管，所述发光器件外延层还包括波导层。
作为优选，量子阱势阱厚度0.5 nm-5 nm，优选 2 nm，势垒厚度 2 nm-15 nm，优选8 nm，势垒/势阱重复层数1 -20层，优选 5层。
电子阻挡层厚度5 nm-50 nm，优选 10 nm。
本发明提供一种具体的一种III族氮化物半导体发光器件台面刻蚀方法， 包括以下步骤：
1）在衬底上外延生长缓冲层，并通过刻蚀工艺刻蚀缓冲层得到图形化缓冲层衬底；
2）在所述图形化缓冲层衬底上同时外延生长由氮极性畴与金属极性畴组成的各层发光器件外延层，所述发光器件外延层至少包括n型电流扩展层、有源层、p型电流扩展层；发光器件外延层中每一层均具有氮极性畴与金属极性畴；
3）采用湿法刻蚀工艺刻蚀每层发光器件外延层的氮极性畴至n型电流扩展层，以便于沉积金属电极，后续制备发光器件工序可与现有技术相同。
所述发光器件外延层包括LED外延层和激光二极管外延层。
所述外延生长可以为MOCVD、磁控溅射、MBE晶体生长中的一种。
本发明衬底上有缓冲层的部位外延薄膜为金属极性，因此不受湿法刻蚀影响；衬底上没有缓冲层的部位外延薄膜为氮极性，通过调控湿法刻蚀浓度和时间，可控刻蚀去除p型电流扩展层、有源层等氮极性畴，使器件露出平整的n型台面。最后，基于传统光刻工艺沉积n型层金属电极和p型层金属电极，并进行表面钝化。
本发明的有益效果是：本发明利用极性调控技术，在同一片衬底上同时生长金属极性畴和氮极性畴薄膜外延层制备发光器件外延层。在Ⅲ族氮化物发光器件的制备中充分利用了金属极性薄膜晶体质量高、表面平整的特点，和氮极性畴易湿法刻蚀加工、电子浓度高的优势。利用湿法刻蚀溶液对Ⅲ族氮化物发光器件不同极性的刻蚀选择性差异，合理设计LED或激光二极管结构，采用湿法刻蚀的方法制备器件台面，避免了反应等离子体刻蚀对Ⅲ族氮化物放器件侧壁以及底部的晶格损伤，防止器件性能的恶化。该台面刻蚀方法工艺简单、成本低廉、刻蚀界面平整光滑，避免了光刻，沉积阻挡层，liftoff，阻挡层去除等繁琐步骤。同时，利用氮极性面氮化物非故意掺杂氧原子，并具有高电子浓度的特点，大大降低了n型金属电极，特别是高铝组分AlGaN材料n型电极的电阻率，提高其电流导通能力。
附图说明
图1为实施例1的工艺流程示意图。
图2为实施例1制备的台面截面结构示意图。
具体实施方式
下面用具体实施例对本发明做进一步详细说明，但本发明不仅局限于以下具体实施例。
实施例1：
a)在硅衬底上基于MOCVD技术生长50 nm厚的缓冲层，基于光刻和等离子体刻蚀工艺得到图形化缓冲层衬底，如图1所示，本实施例采用光刻去除部分缓冲层实现对缓冲层的图形化，但并不对图形化方案进行限制，具体可以采用现有图形化技术中的任意图形化方案实现。
b)基于图形化缓冲层衬底生长LED外延层。所述LED外延层由底层至顶层依次为AlN应力释放层、n型电流扩展层、多层量子阱、电子阻挡层、p型电流扩展层，如图2所示。所述LED外延层对应于衬底上有缓冲层的部位为金属极性畴，对应于衬底上没有缓冲层的部位为氮极性畴。
c)在室温下采用TMAH/H2O2（质量百分比4:1）溶液刻蚀LED外延层10分钟，各层LED外延层的氮极性畴刻蚀至n型电流扩展层，各层的金属极性畴不受影响。
d)基于传统光刻工艺和电子束沉积工艺在氮极性畴沉积V/Al/Ni/Au电极，在金属极性畴沉积Ni/Au电极。
e)基于PECVD工艺沉积 SiO2钝化层，光刻开孔，并沉积加厚电极层。
实施例2
a)在蓝宝石衬底上基于MBE技术生长5 nm厚的缓冲层，基于光刻和KOH刻蚀工艺得到图形化缓冲层衬底。
b)基于图形化缓冲层衬底生长激光二极管外延层。所述激光二极管外延层由底层至顶层依次为AlGaN应力释放层、n型电流扩展层、波导层、多层量子阱、电子阻挡层、波导层、p型电流扩展层；所述激光二极管外延层对应于衬底上有缓冲层的部位为金属极性畴，对应于衬底上没有缓冲层的部位为氮极性畴。
c)在70摄氏度下采用H3PO4/H2O2溶液（浓度分别为3M, 0.5M）刻蚀激光二极管外延层5分钟，氮极性畴刻蚀至n型电流扩展层，金属极性畴不受影响。
d)基于传统光刻工艺和电子束沉积工艺在氮极性畴沉积Ti/Al/Ti/Au电极，在金属极性畴沉积Ni/Au电极。
e)基于PECVD工艺沉积 Si3N4钝化层，光刻开孔，并沉积加厚电极层。
f)基于激光切割技术获得激光二极管条棒，形成光滑平行的FP谐振腔。
以上仅是本发明的特征实施范例，对本发明保护范围不构成任何限制。凡采用同等交换或者等效替换而形成的技术方案，均落在本发明权利保护范围之内。
Claims (10)
1.一种III族氮化物半导体发光器件台面刻蚀方法，其特征在于：包括以下步骤：首先在衬底上外延生长缓冲层，并刻蚀缓冲层得到图形化缓冲层衬底，在所述图形化缓冲层衬底上外延生长具有横向极性结构的发光器件外延层，所述横向极性结构包括氮极性畴与金属极性畴；然后采用湿法刻蚀工艺利用氮极性畴与金属极性畴在刻蚀液中表现出的惰性差异对非惰性极性畴进行刻蚀。
2.根据权利要求1所述的III族氮化物半导体发光器件台面刻蚀方法，其特征在于：所述衬底为蓝宝石衬底、SiC衬底、Si衬底中的一种。
3.根据权利要求1所述的III族氮化物半导体发光器件台面刻蚀方法，其特征在于：所述缓冲层为Al（x）Ga（1-x）N，其中0≤x≤1。
4.根据权利要求1所述的III族氮化物半导体发光器件台面刻蚀方法，其特征在于：所述发光器件外延层包括n型电流扩展层、有源层、p型电流扩展层。
5.根据权利要求4所述的III族氮化物半导体发光器件台面刻蚀方法，其特征在于：所述发光器件外延层包括应力释放层、n型电流扩展层、有源层、p型电流扩展层。
6.根据权利要求5所述的III族氮化物半导体发光器件台面刻蚀方法，其特征在于：所述有源层由量子阱层和电子阻挡层组成。
7.根据权利要求5所述的III族氮化物半导体发光器件台面刻蚀方法，其特征在于：所述应力释放层为GaN、AlN或AlGaN应力释放层中的一种。
8. 根据权利要求1所述的III族氮化物半导体发光器件台面刻蚀方法，其特征在于，包括以下步骤：
1）在衬底上外延生长缓冲层，并通过刻蚀工艺刻蚀缓冲层得到图形化缓冲层衬底；
2）在所述图形化缓冲层衬底上同时外延生长由氮极性畴与金属极性畴组成的各层发光器件外延层，所述发光器件外延层至少包括n型电流扩展层、有源层、p型电流扩展层；发光器件外延层中每一层均具有氮极性畴与金属极性畴；
3）采用湿法刻蚀工艺刻蚀每层发光器件外延层的氮极性畴至n型电流扩展层。
9.根据权利要求8所述的III族氮化物半导体发光器件台面刻蚀方法，其特征在于：所述发光器件外延层为LED外延层或激光二极管外延层。
10.根据权利要求8所述的III族氮化物半导体发光器件台面刻蚀方法，其特征在于：所述外延生长可以为MOCVD、磁控溅射、MBE晶体生长中的一种。
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