CN111324168B - Band gap reference source - Google Patents
Band gap reference source Download PDFInfo
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- CN111324168B CN111324168B CN201811543594.5A CN201811543594A CN111324168B CN 111324168 B CN111324168 B CN 111324168B CN 201811543594 A CN201811543594 A CN 201811543594A CN 111324168 B CN111324168 B CN 111324168B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
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Abstract
The present disclosure relates to a band gap reference source, which includes a band gap reference source power supply generating circuit and a band gap reference source core circuit, wherein the band gap reference source power supply generating circuit is used to generate a power supply required by the band gap reference source core circuit, the band gap reference source core circuit is used to generate a reference voltage, the band gap reference source power supply generating circuit includes a P-type current source, an N-type current mirror, a P-type current mirror, a common source circuit and a common gate circuit, wherein: the current generated by the P-type current source sequentially flows through the N-type current mirror and the P-type current mirror and then is amplified, and the common-gate circuit and the common-source circuit form a negative feedback loop and are matched with the output of the P-type current mirror to provide a power supply for the band-gap reference source core circuit.
Description
Technical Field
The present disclosure relates to the field of electronic circuit technology, and in particular, to a bandgap reference source.
Background
Fig. 1 shows a circuit schematic of a prior art bandgap reference source. In order to improve the power supply rejection ratio of the bandgap reference source and to improve the problem of excessive noise of the Vref output power supply, the power supply VDDL of the bandgap reference source is provided by a voltage series negative feedback loop, and the local power supply VDDL designed in this way is kept relatively independent of the global power supply voltage VDDA. To minimize the dependence of the VR on the power supply, the VR is generated by a bandgap reference source core circuit. The band-gap reference source adopts a resistance voltage-dividing circuit. In the resistor voltage-dividing circuit, in order to obtain a small direct current consumption current, the resistors R1 and R2 in fig. 1 are often made large, and the large resistors R1 and R2 not only occupy a large area but also have large thermal noise. In addition, the bandgap reference source shown in fig. 1 employs voltage series negative feedback to stabilize the output to provide a power supply VDDL of the bandgap reference source. This approach is equivalent to transferring the design difficulty to the op-amp opa, and the design of the op-amp needs to balance various design criteria and application requirements, thereby increasing the design difficulty of the bandgap reference source.
Disclosure of Invention
The purpose of the disclosure is to provide a bandgap reference source, which does not adopt an operational amplifier and a resistance voltage-dividing circuit, thereby not only reducing the design difficulty, but also reducing the area and the thermal noise.
According to a first embodiment of the present disclosure, a bandgap reference source is provided, which includes a bandgap reference source power supply generating circuit and a bandgap reference source core circuit, where the bandgap reference source power supply generating circuit is configured to generate a power supply required by the bandgap reference source core circuit to operate, the bandgap reference source core circuit is configured to generate a reference voltage, the bandgap reference source power supply generating circuit includes a P-type current source, an N-type current mirror, a P-type current mirror, a common source circuit, and a common gate circuit, where: the current generated by the P-type current source sequentially flows through the N-type current mirror and the P-type current mirror and then is amplified, and the common gate circuit and the common source circuit form a negative feedback loop and are matched with the output of the P-type current mirror to provide a power supply for the band-gap reference source core circuit.
Optionally, the bandgap reference source power supply generating circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor and a ninth transistor, wherein the first transistor constitutes the P-type current source; the second transistor and the third transistor constitute the N-type current mirror; the fourth transistor and the fifth transistor constitute the P-type current mirror; the sixth transistor constitutes the common source stage circuit; the seventh transistor constitutes the common gate circuit, in which:
a drain of the first transistor is connected to a drain and a gate of the second transistor, a source of the first transistor is connected to a drain of the fifth transistor and a drain of the sixth transistor, a gate of the first transistor is connected to a first input terminal of the bandgap reference source core circuit, a source of the second transistor, a source of the third transistor, and a source of the eighth transistor are all grounded, a gate of the third transistor is connected to a drain of the second transistor, a drain of the third transistor is connected to a gate and a drain of the ninth transistor, a source of the ninth transistor is connected to a drain and a gate of the fourth transistor, a gate of the fifth transistor is connected to a gate of the fourth transistor, a source of the fourth transistor and a source of the fifth transistor are both connected to a global power supply of the bandgap reference source, a gate of the sixth transistor is connected to a drain of the seventh transistor, a source of the sixth transistor is grounded, a gate of the seventh transistor is connected to the second input terminal of the bandgap reference source core circuit, a source of the seventh transistor is connected to a source of the first transistor, a drain of the eighth transistor is connected to a drain of the seventh transistor, a source of the eighth transistor is grounded, and a voltage of the source of the first transistor is supplied to the bandgap reference source core circuit as the power generated by the bandgap reference source power generation circuit.
Optionally, the bandgap reference source power supply generating circuit further includes a compensation circuit for compensating a loop of the bandgap reference source power supply generating circuit.
Optionally, the compensation circuit comprises a resistor and a capacitor, wherein one end of the resistor is connected to the capacitor, the other end of the resistor is connected to the drain of the sixth transistor, and the other end of the capacitor is connected to the gate of the sixth transistor.
Optionally, the gate of the seventh transistor is used for clamping a power supply of the bandgap reference source.
By adopting the technical scheme, the operational amplifier is not adopted in the band-gap reference source power supply generating circuit, so that the circuit structure is simple; because no resistance voltage division circuit is adopted, the power consumption is lower compared with the prior art, and the power supply ripple rejection capability is better.
Additional features and advantages of the disclosure will be set forth in the detailed description which follows.
Drawings
The accompanying drawings, which are included to provide a further understanding of the disclosure and are incorporated in and constitute a part of this specification, illustrate embodiments of the disclosure and together with the description serve to explain the disclosure without limiting the disclosure. In the drawings:
fig. 1 shows a circuit schematic of a prior art bandgap reference source.
Fig. 2 shows a schematic circuit diagram of a bandgap reference source according to yet another embodiment of the present disclosure.
Fig. 3 shows a schematic circuit diagram of a bandgap reference source according to yet another embodiment of the present disclosure.
Fig. 4 shows an equivalent circuit diagram of the broken-line path a shown in fig. 3.
Fig. 5 shows a small signal loop analysis schematic of a bandgap reference source in accordance with an embodiment of the present disclosure.
Fig. 6 shows a simplified equivalent circuit diagram of the high band of a bandgap reference source in accordance with an embodiment of the present disclosure.
Detailed Description
The following detailed description of specific embodiments of the present disclosure is provided in connection with the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present disclosure, are given by way of illustration and explanation only, not limitation.
Before describing in detail the bandgap reference source according to the embodiments of the present disclosure, the basic principle of the bandgap reference source will be briefly introduced.
The purpose of the bandgap reference is to establish a dc voltage or current with defined temperature characteristics independent of power supply and process. In addition to process, voltage and temperature uncertainties, bandgap references are also of great concern for power supply ripple rejection capability in both the low and high frequency bands. Circuit noise and overall power consumption are also major indicators of tradeoffs in bandgap reference design.
The band-gap reference is a band-gap reference voltage which is generated by superposing a positive conduction voltage of a PN junction with a negative temperature characteristic and a positive conduction voltage difference of two PN junctions with a positive temperature characteristic according to a certain proportion and mutually offsetting positive and negative temperature coefficients of the two PN junctions to generate very small temperature drift characteristics. Two bipolar transistors operating at unequal current densities and having a difference in base-emitter voltages Δ VBEProportional to absolute temperature, assuming two identical transistors (reverse saturation current I)S1＝IS2) Biased at collector currents of nI respectively0And I0And ignores its base current. Namely:
when T is 300K, VT＝26mV。VBE1And VBE2Respectively the base-emitter voltages of the two bipolar transistors.
A bandgap reference source according to an embodiment of the present disclosure is described in detail below.
Fig. 2 shows a schematic circuit diagram of a bandgap reference source according to an embodiment of the present disclosure, as shown in fig. 2, the bandgap reference source includes a bandgap reference source power generation circuit 2 and a bandgap reference source core circuit 1, where the bandgap reference source power generation circuit 2 is configured to generate a power supply required by the operation of the bandgap reference source core circuit 1, the bandgap reference source core circuit 1 is configured to generate a reference voltage, and the bandgap reference source power generation circuit 2 includes a P-type current source 20, an N-type current mirror 21, a P-type current mirror 22, a common source circuit 23, and a common gate circuit 24, where: the current generated by the P-type current source 20 flows through the N-type current mirror 21 and the P-type current mirror 22 in sequence and then is amplified, and the common gate circuit 24 and the common source circuit 23 form a negative feedback loop and are matched with the output of the P-type current mirror 22 to provide a power supply VDDL for the bandgap reference source core circuit 1.
By adopting the technical scheme, the operational amplifier is not adopted in the band-gap reference source power generation circuit 2, so that the circuit structure is simple; because a resistance voltage division circuit is not adopted, the power consumption is lower than that of the prior art; in addition, the power supply ripple rejection capability is better, as will be described in detail below.
Further reference is made to fig. 2. As shown in fig. 2, the bandgap reference source power generating circuit 2 includes a first transistor M15, a second transistor M17, a third transistor M21, a fourth transistor M19, a fifth transistor M18, a sixth transistor M22, a seventh transistor M23, an eighth transistor M16, and a ninth transistor M20. Wherein the first transistor M15 constitutes the P-type current source 20 in fig. 2; the second transistor M17 and the third transistor M21 constitute the N-type current mirror 21 in fig. 2; the fourth transistor M19 and the fifth transistor M18 constitute the P-type current mirror 22 in fig. 2; the sixth transistor M22 constitutes the common source stage circuit 23 in fig. 2; the seventh transistor M23 constitutes the common-gate circuit 24 in fig. 2.
A drain of the first transistor M15 is connected to a drain and a gate of the second transistor M17, a source of the first transistor M15 is connected to a drain of the fifth transistor M18 and a drain of the sixth transistor M22, a gate of the first transistor M15 is connected to the first input terminal of the bandgap reference source core circuit 1, a source of the second transistor M17, a source of the third transistor M21 and a source of the eighth transistor M16 are all grounded, a gate of the third transistor M21 is connected to the drain of the second transistor M17, a drain of the third transistor M21 is connected to a gate and a drain of the ninth transistor M20, a source of the ninth transistor M20 is connected to a drain and a gate of the fourth transistor M19, a gate of the fifth transistor M18 is connected to a gate of the fourth transistor M19, a source of the fourth transistor M19 and a source of the fifth transistor M18 are both connected to the drain and the global bandgap reference source of the bandgap reference source A power supply VDDA, a gate of the sixth transistor M22 is connected to the drain of the seventh transistor M23, a source of the sixth transistor M22 is grounded, a gate of the seventh transistor M23 is connected to the second input terminal of the bandgap reference source core circuit 1, a source of the seventh transistor M23 is connected to the source of the first transistor M15, a drain of the eighth transistor M16 is connected to the drain of the seventh transistor M23, a source of the eighth transistor M16 is grounded, and a voltage of the source of the first transistor M15 is supplied to the bandgap reference source core circuit 1 as the power supply generated by the bandgap reference source power supply generation circuit 2.
Fig. 3 shows a schematic circuit diagram of a bandgap reference source according to yet another embodiment of the present disclosure. The bandgap reference source power supply generating circuit in fig. 3 is the same as the bandgap reference source power supply generating circuit in fig. 2, except that fig. 3 shows a specific circuit example of the bandgap reference source core circuit 1. It will be understood by those skilled in the art that the present disclosure is not limited to the specific structure of the bandgap reference source core circuit 1.
In fig. 3, for the bandgap reference source core circuit 1, the negative feedback loop formed by the transistors Q1 and Q2, the resistor R4 and the operational amplifier is greater than the positive feedback so that VIP is equal to VIN, so the current flowing through the transistors M12, M13 and M14 is a current proportional to the absolute temperature, that is:
then, IPTATAfter the current is mirrored, a bandgap voltage Vref is generated in the branch in which the resistor R3 is located, that is:
therefore, as long as guarantee
The bandgap reference source reaches zero temperature coefficient.
The VDDL generation loop of the bandgap reference source circuit of fig. 3 is analyzed, and is described mainly in terms of both dc analysis and small-signal loop analysis.
First is a straight-stream analysis. As shown in fig. 3, the dotted path B is a path of a current generated by the P-type current source formed by the first transistor M15 passing through the N-type current mirror formed by the second transistor M17 and the third transistor M21 and the P-type current mirror formed by the fourth transistor M19 and the fifth transistor M18, wherein the fifth transistor M18 is a tuning transistor and the current flowing through the P-type current source 20 is the current I generated by the P-type current source 20M15Multiples of (a), (b), (c), (d):
IM18＝mIM19＝mIM21＝mnIM17＝mnIM15
where M is the ratio of the width-to-length ratio of the transistor M18 to the transistor M19, and n is the ratio of the width-to-length ratio of the transistor M21 to the transistor M17.
The dotted path a can be simplified to the equivalent circuit diagram shown in fig. 4. VDDL is clamped to vi + v as shown in FIG. 4gs_m23Wherein
Vi is the conduction voltage drop of transistor Q1 shown in FIG. 3, i.e.
Wherein ISIs reverse saturation current, when T is 300K, VT＝26mV；vgs_m23Is the gate-source voltage of transistor M23 shown in fig. 3. I isQ1Is the current of transistor Q1. Due to UBEIs insensitive to current variations, so vi is relatively stable and can be used as a reference voltage for VDDL.
In addition, the other load modules in fig. 4 include transistors M3, M4, M9, M10, M12, M13, M14, M15, M22 in fig. 3, and the current IB refers to the current I of the transistor M18M18. In addition, IB0 is the current I flowing through the transistor M16M16＝IM23. The current IB is IB0+ IB 1.
Next, a small signal loop analysis is performed. As shown in fig. 5, the loop shown by the dotted line is broken at the position of the fork, and the sixth transistor M22 is a common source stage along the dotted line path, and the seventh transistor M23 forms a common gate, so that the whole loop has only one stage of feedback, i.e., the common gate, and thus the feedback path is a negative feedback loop. The common source stage of the sixth transistor M22 is formed by a resistor R5 and a capacitor Cc by miller compensation, and the zero point generated by the miller compensation is moved by a resistor R5, so that the stability of the loop is improved.
The power supply ripple rejection capability of the bandgap reference source according to the embodiment of the present disclosure is described in detail below with reference to fig. 3. The power supply ripple rejection capability is considered divided into a high frequency band and a low frequency band.
In the low frequency band, the P-type current mirror formed by the fourth transistor M19 and the fifth transistor M18 plays a major role in suppressing the power supply ripple from VDDA to VDDL, and since the fourth transistor M19 adopts a diode connection method, the fifth transistor M18 serves as a regulating transistor, and the gate of the fifth transistor M18 is equivalent to a clamp of VDDA. The gate-source voltage of the fifth transistor M18 is unchanged as VDDA floats, so VDDL is relatively clean. There is a strong power supply ripple rejection capability at low frequency bands for Vref.
In the high frequency band, the power supply ripple rejection capability is determined by the equivalent voltage divider model. Fig. 6 shows a simplified equivalent circuit diagram for the high frequency band. As shown in fig. 6, the resistor RO1 and the capacitor CO1 are the output resistor and the parasitic capacitor of the fifth transistor M18, i.e., the tuning transistor, the resistor RO2 and the capacitor CO2 are the equivalent resistor and the equivalent capacitor between VDDL and VREF, the capacitor CO2 is mainly provided by the gate capacitor of the transistor (note that the transistor between M14 and M10 is a MOS capacitor), and the capacitor C is the capacitor to ground added by the output. In order to improve the ripple suppression capability of Vref, it is most effective to increase the capacitance of the capacitor C.
The preferred embodiments of the present disclosure are described in detail with reference to the accompanying drawings, however, the present disclosure is not limited to the specific details of the above embodiments, and various simple modifications may be made to the technical solution of the present disclosure within the technical idea of the present disclosure, and these simple modifications all belong to the protection scope of the present disclosure.
It should be noted that the various features described in the above embodiments may be combined in any suitable manner without departing from the scope of the invention. In order to avoid unnecessary repetition, various possible combinations will not be separately described in this disclosure.
In addition, any combination of various embodiments of the present disclosure may be made, and the same should be considered as the disclosure of the present disclosure, as long as it does not depart from the spirit of the present disclosure.
Claims (3)
1. A bandgap reference source, which is characterized by comprising a bandgap reference source power supply generating circuit (2) and a bandgap reference source core circuit (1), wherein the bandgap reference source power supply generating circuit (2) is used for generating a power supply required by the bandgap reference source core circuit (1) to work, the bandgap reference source core circuit (1) is used for generating a reference voltage, the bandgap reference source power supply generating circuit (2) comprises a P-type current source (20), an N-type current mirror (21), a P-type current mirror (22), a common source circuit (23) and a common gate circuit (24), wherein:
the current generated by the P-type current source (20) sequentially flows through the N-type current mirror (21) and the P-type current mirror (22) and then is amplified, the common gate circuit (24) and the common source circuit (23) form a negative feedback loop and are matched with the output of the P-type current mirror (22) to provide a power supply (VDDL) for the band-gap reference source core circuit (1);
the band-gap reference source power generation circuit (2) comprises a first transistor (M15), a second transistor (M17), a third transistor (M21), a fourth transistor (M19), a fifth transistor (M18), a sixth transistor (M22), a seventh transistor (M23), an eighth transistor (M16) and a ninth transistor (M20), wherein the first transistor (M15) constitutes the P-type current source (20); the second transistor (M17) and the third transistor (M21) constitute the N-type current mirror (21); the fourth transistor (M19) and the fifth transistor (M18) constitute the P-type current mirror (22); the sixth transistor (M22) constitutes the common-source stage circuit (23); the seventh transistor (M23) constitutes the common-gate circuit (24), wherein:
a drain of the first transistor (M15) is connected to a drain and a gate of the second transistor (M17), a source of the first transistor (M15) is connected to a drain of the fifth transistor (M18), a drain of the sixth transistor (M22), a gate of the first transistor (M15) is connected to a first input terminal of the bandgap reference source core circuit (1), a source of the second transistor (M17), a source of the third transistor (M21), and a source of the eighth transistor (M16) are all grounded, a gate of the third transistor (M21) is connected to a drain of the second transistor (M17), a drain of the third transistor (M21) is connected to a gate and a drain of the ninth transistor (M20), a source of the ninth transistor (M20) is connected to a drain and a gate of the fourth transistor (M19), a gate of the fifth transistor (M18) is connected to a gate of the fourth transistor (M19), a source of the fourth transistor (M19) and a source of the fifth transistor (M18) are both connected to a global power supply (VDDA) of the bandgap reference source, a gate of the sixth transistor (M22) is connected to a drain of the seventh transistor (M23), the source of the sixth transistor (M22) is grounded, the gate of the seventh transistor (M23) is connected to the second input terminal of the bandgap reference source core circuit (1), a source of the seventh transistor (M23) is connected to a source of the first transistor (M15), a drain of the eighth transistor (M16) is connected to a drain of the seventh transistor (M23), the source of the eighth transistor (M16) is grounded, and the voltage of the source of the first transistor (M15) is provided to the bandgap reference source core circuit (1) as the power generated by the bandgap reference source power generating circuit (2);
a gate of the seventh transistor (M23) is used for clamping the power supply (VDDL) of the bandgap reference source, and the clamping voltage of the power supply (VDDL) of the bandgap reference source is vi + vgs_m23，vgs_m23Vi is a conducting voltage drop of a triode (Q1) used for being connected with the seventh transistor (M23), an emitter of the triode (Q1) is connected with a gate of the seventh transistor (M23), and a base and a collector of the triode (Q1) are grounded.
2. The bandgap reference source according to claim 1, wherein the bandgap reference source power generating circuit (2) further comprises a compensation circuit for compensating the bandgap reference source power generating circuit (2) loop.
3. The bandgap reference source according to claim 2, wherein the compensation circuit comprises a resistor (R5) and a capacitor (Cc), wherein one end of the resistor (R5) is connected to the capacitor (Cc), the other end is connected to the drain of the sixth transistor (M22), and the other end of the capacitor (Cc) is connected to the gate of the sixth transistor (M22).
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Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007305010A (en) * | 2006-05-15 | 2007-11-22 | Seiko Npc Corp | Reference voltage generation circuit |
| CN101329586A (en) * | 2007-06-19 | 2008-12-24 | 凹凸电子（武汉）有限公司 | Reference voltage generator and method for providing multiple reference voltages |
| CN102289243A (en) * | 2011-06-30 | 2011-12-21 | 西安电子科技大学 | Complementary metal oxide semiconductor (CMOS) band gap reference source |
| CN103412606A (en) * | 2013-07-18 | 2013-11-27 | 电子科技大学 | Band gap reference voltage source |
| CN104122918A (en) * | 2013-04-26 | 2014-10-29 | 中国科学院深圳先进技术研究院 | Band-gap reference circuit |
| CN104765405A (en) * | 2014-01-02 | 2015-07-08 | 意法半导体研发(深圳)有限公司 | Current reference circuit for temperature and process compensation |
| CN105786075A (en) * | 2016-04-20 | 2016-07-20 | 广东工业大学 | Pre-regulator circuit capable of increasing band-gap reference power supply rejection ratio |
| CN108958348A (en) * | 2018-08-13 | 2018-12-07 | 电子科技大学 | A kind of band gap reference of high PSRR |
-
2018
- 2018-12-17 CN CN201811543594.5A patent/CN111324168B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007305010A (en) * | 2006-05-15 | 2007-11-22 | Seiko Npc Corp | Reference voltage generation circuit |
| CN101329586A (en) * | 2007-06-19 | 2008-12-24 | 凹凸电子（武汉）有限公司 | Reference voltage generator and method for providing multiple reference voltages |
| CN102289243A (en) * | 2011-06-30 | 2011-12-21 | 西安电子科技大学 | Complementary metal oxide semiconductor (CMOS) band gap reference source |
| CN104122918A (en) * | 2013-04-26 | 2014-10-29 | 中国科学院深圳先进技术研究院 | Band-gap reference circuit |
| CN103412606A (en) * | 2013-07-18 | 2013-11-27 | 电子科技大学 | Band gap reference voltage source |
| CN104765405A (en) * | 2014-01-02 | 2015-07-08 | 意法半导体研发(深圳)有限公司 | Current reference circuit for temperature and process compensation |
| CN105786075A (en) * | 2016-04-20 | 2016-07-20 | 广东工业大学 | Pre-regulator circuit capable of increasing band-gap reference power supply rejection ratio |
| CN108958348A (en) * | 2018-08-13 | 2018-12-07 | 电子科技大学 | A kind of band gap reference of high PSRR |
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