CN111304609A - Magnetron sputtering reaction equipment - Google Patents
Magnetron sputtering reaction equipment Download PDFInfo
- Publication number
- CN111304609A CN111304609A CN202010190553.3A CN202010190553A CN111304609A CN 111304609 A CN111304609 A CN 111304609A CN 202010190553 A CN202010190553 A CN 202010190553A CN 111304609 A CN111304609 A CN 111304609A
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- Prior art keywords
- baffle
- magnetron sputtering
- target
- substrate
- motor
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- 238000001755 magnetron sputter deposition Methods 0.000 title claims abstract description 35
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 61
- 239000013077 target material Substances 0.000 claims abstract description 38
- 230000005540 biological transmission Effects 0.000 claims abstract description 26
- 238000004544 sputter deposition Methods 0.000 claims abstract description 23
- 230000007246 mechanism Effects 0.000 claims abstract description 21
- 230000009471 action Effects 0.000 claims description 5
- 239000010408 film Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000007792 addition Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses magnetron sputtering reaction equipment which comprises a sputtering mechanism, a sample frame and a stepping motor, wherein the sample frame is provided with a plurality of sample holes; the sputtering mechanism comprises a target material and is used for carrying out magnetron sputtering on a sample on the substrate; the sample holder comprises a plurality of substrate fixing seats which are uniformly distributed in the circumferential direction, and the substrate fixing seats are used for fixing substrates loaded with samples; the substrate fixing seat is in transmission connection with the stepping motor, and the stepping motor acts to enable the substrate fixing seat to sequentially rotate to correspond to the target material. The invention has the advantages that: the sample rack is connected through the stepping motor, so that one key is in place when the sample is aligned with the target material, and errors caused by manual control are avoided.
Description
Technical Field
The invention belongs to the field of magnetron sputtering instruments, and particularly relates to magnetron sputtering reaction equipment.
Background
The basic principle of the magnetron sputtering apparatus is a sputtering coating method, and in the deposition process, electrons accelerate to fly to a substrate under the action of an electric field and collide with argon atoms to ionize a large amount of argon ions and electrons. Then, the argon ions are accelerated to bombard the target under the action of an electric field, a large number of target atoms are sputtered, and neutral target atoms (or molecules) are deposited on the substrate to form a film. The method can be used for preparing various micro-nano-grade films and has the advantages of large film coating area, high film forming quality, easiness in equipment control and the like.
As shown in fig. 1, the magnetron sputtering method prepares a thin film by sputtering a target material a against a substrate C fixed on a sample holder B. Because the vacuum pumping time is long, a plurality of films are continuously prepared in the test. Before the cavity is closed and film coating is started, a plurality of substrates C are placed on a sample frame B, the sample frame B is rotated after preparation of one film is completed, and the next substrate is aligned to a target material A for film coating continuously. The coating process is carried out in the main cavity of the instrument, and the main cavity is ensured to be in an ultra-vacuum state. In the existing mechanism, five targets A are arranged in a main cavity, and corresponding to five substrate fixing devices on a sample rack B, the fixing devices are fixed by clinging to a disc-shaped sample rack and rotate along with the rotation of the sample rack. The rotation of the sample holder is controlled by connecting a control panel with a rotating motor, and the opening and closing of the target are respectively controlled by five independent baffles. The mechanism mainly has the following defects: the rotating part of the sample holder is controlled by a manually controlled rotating motor, the whole sample holder together with other related components needs to be rotated when the position of the substrate is moved, the sample holder moves immediately when rotating, namely stops immediately when being loosened, and the rotating reaction is delayed frequently because the sample disc is too heavy, so that the rotating angle is difficult to accurately control so as to realize that the substrate is just opposite to the target material.
Disclosure of Invention
The invention aims to solve the problem that a rotating part of a sample rack of the existing magnetron sputtering instrument is difficult to accurately control the rotating angle so as to realize that a substrate is opposite to a target material, and provides magnetron sputtering reaction equipment.
In order to achieve the purpose, the invention adopts the following technical scheme:
a magnetron sputtering reaction device comprises a sputtering mechanism, a sample frame and a stepping motor; the sputtering mechanism comprises a target material and is used for carrying out magnetron sputtering on a sample on the substrate; the sample holder comprises a plurality of substrate fixing seats which are uniformly distributed in the circumferential direction, and the substrate fixing seats are used for fixing substrates loaded with samples; the substrate fixing seat is in transmission connection with the stepping motor, and the stepping motor acts to enable the substrate fixing seat to sequentially rotate to correspond to the target material.
Preferably, the number of the targets of the sputtering mechanism is one, and the magnetron sputtering reaction equipment further comprises a target baffle plate which is positioned between the target and the sample holder; the target material baffle is provided with a through hole, and the through hole is arranged opposite to the target material.
Preferably, the number of the targets of the sputtering mechanism is multiple, the magnetron sputtering reaction equipment further comprises a target baffle and a baffle control motor, the target baffle is in transmission connection with the baffle control motor, and the target baffle is positioned between the targets and the sample holder; the target material baffle is provided with a through hole, and the baffle controls the action of the motor to enable the through hole to rotate in sequence to correspond to the required target material.
Preferably, the through-hole is a circular hole.
Preferably, the sample holder further comprises a connecting arm and a central disc, the substrate holder is connected with the central disc through the connecting arm, and the central disc is in transmission connection with a shaft of the stepping motor.
Preferably, the number of the connecting arms and the number of the substrate holders are five, respectively.
Preferably, the substrate fixing seat is provided with a mounting groove, two sides of a notch of the mounting groove are respectively provided with a slide rail step, the inner side of the notch is provided with a limiting step, and the slide rail step and the limiting step have a height difference; the substrate is inserted and installed in a limiting space formed by the slide rail step and the limiting step.
Preferably, still include big belt pulley, belt lace wheel and sample frame rotation axis, the belt lace wheel is installed in step motor's axle, and big belt pulley and central disc are by sample frame rotation axis coaxial coupling, and belt lace wheel drives big belt pulley and rotates.
Preferably, the device further comprises a baffle motor gear, a baffle transmission gear and a baffle transmission shaft, wherein the baffle motor gear is arranged on a shaft of the baffle motor, the baffle transmission gear and the target baffle are coaxially connected through the baffle transmission shaft, and the baffle motor gear is meshed with the baffle transmission gear.
Preferably, the stepping motor further comprises a motor mounting bracket for mounting the stepping motor.
Compared with the prior art, the invention has the beneficial effects that:
the sample rack is connected through the stepping motor, so that one key is in place when the sample is aligned with the target material, and errors caused by manual control are avoided.
Drawings
FIG. 1 is a schematic structural diagram of a conventional magnetron sputtering reaction apparatus according to the present invention;
FIG. 2 is a schematic structural diagram of a magnetron sputtering reaction apparatus according to a first embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a sputtering mechanism according to a first embodiment of the present invention;
FIG. 4 is a side view of a sample holder according to a first embodiment of the present invention;
FIG. 5 is a top view of a sample holder according to a first embodiment of the present invention;
FIG. 6 is a top view of a substrate holder according to a first embodiment of the present invention;
FIG. 7 is a bottom view of a substrate holder according to a first embodiment of the present invention;
fig. 8 is a side view of a target shutter according to a first embodiment of the present invention;
fig. 9 is a top view of a target shutter according to a first embodiment of the present invention.
Detailed Description
In order to more clearly illustrate the embodiments of the present invention, the following description will explain the embodiments of the present invention with reference to the accompanying drawings. It is obvious that the drawings in the following description are only some examples of the invention, and that for a person skilled in the art, other drawings and embodiments can be derived from them without inventive effort.
The first embodiment is as follows:
a magnetron sputtering apparatus of this embodiment, as shown in fig. 2, includes a sputtering mechanism 10, a sample holder 20, a stepping motor 30, a motor mounting bracket 31, a large belt pulley 32, a small belt pulley 33, and a sample holder rotating shaft 35. Wherein the sputtering mechanism and the sample holder are both disposed in the apparatus chamber 90, the sputtering mechanism 10 is fixed, and the sample holder 20 is rotatable. The sputtering mechanism 10 comprises five targets 11 uniformly distributed along the circumference and is used for carrying out magnetron sputtering on a sample on a substrate. The structure of the magnetron mechanism is shown in fig. 3, and the target 11 is arranged on the top of the magnetron mechanism 10 and exposed, and faces the substrate. As shown in fig. 4 and 5, the sample holder 20 includes five substrate holders 21, five connecting arms 22, and a central plate 23, which are uniformly distributed in the circumferential direction. The substrate holder 21 is connected to a central plate 23 via a connecting arm 22, and the central plate 23 is drivingly connected to a shaft of a stepping motor 30. Each substrate holder 21 is fixed to a central plate 23 by means of a connecting arm 22 so as to be rotatable therewith. As shown in fig. 6 and 7, the substrate fixing seat 21 has a mounting groove 21a, two sides of a notch of the mounting groove are respectively provided with a slide rail step 21b, the inner side of the notch is provided with a limit step 21c, the slide rail step and the limit step have a height difference, and the substrate is inserted into a limit space formed by the slide rail step and the limit step. The substrate fixing seat 21 is used for fixing a substrate loaded with a sample, and the substrate is aligned to the step 21b of the substrate fixing seat when being installed, and is pushed into the substrate fixing seat after being placed into the substrate fixing seat until the substrate is completely inserted into the substrate fixing seat to be fixed. The sample base on the substrate is now completely exposed, facing the target 11 directly below. The connection modes are all bolt connections, so that the replacement and the disassembly of each part of the sample rack are convenient. The stepping motor 30 is installed on the motor installation frame 31, the small belt pulley 33 is installed on the shaft of the stepping motor 30, the large belt pulley 32 is coaxially connected with the central disc 23 through the sample frame rotating shaft 35, and the small belt pulley drives the large belt pulley to rotate through the belt 34. Five substrate fixing seats 21 correspond to five targets 11 one by one, and the relationship between the small belt pulley and the large belt pulley is that the motor rotates for one circle, the small belt pulley rotates for one circle, and the large belt pulley rotates for one fifth of a circle. Therefore, the substrate fixing seat is sequentially rotated to different target positions by the action of the stepping motor, and accurate automatic switching is realized.
The magnetron sputtering reaction equipment also comprises a target baffle 40, a baffle control motor 50, a baffle motor gear 51, a baffle transmission gear 52 and a baffle transmission shaft 53. The baffle motor gear 51 is mounted on the shaft of the baffle control motor 50, the baffle transmission gear 52 and the target baffle 40 are coaxially connected by the baffle transmission shaft 53, and the baffle motor gear 51 is meshed with the baffle transmission gear 52. The target material baffle 40 is located between the target material 11 and the sample holder 20, as shown in fig. 8 and 9, the target material baffle 40 has a circular hole 40a with a diameter larger than that of the target material, the baffle control motor 50 is operated to rotate the circular holes 40a in sequence to correspond to the required target material 11, the baffle motor 50 is geared to rotate for one turn, and the baffle transmission gear 52 controls the target material baffle 40 to rotate for one fifth of a turn, namely, the target material is replaced by one rotation to expose the target material.
The transmission structure of the sample holder is used for controlling the accurate rotation of the substrate during the magnetron sputtering coating, the sample holder is used for reducing the transmission load of the sample holder and ensuring that the substrate is aligned to the center of the target during the sputtering, and the target baffle is used for reducing the collision loss of parts in the instrument and protecting the environment in the cavity from being polluted. The target material baffle is controlled by a transmission system consisting of a baffle control motor and the like, so that all target materials can be completely shielded, and only the target materials to be sputtered are accurately exposed. The rotation units of the sample rack and the target baffle are one fifth of a circle, so that the substrate and the target can be accurately aligned.
When a sputtering test is carried out, the belt pulley is controlled to accurately rotate the substrate to the position above the corresponding target material, and the target material is not exposed. And after the target material is pre-sputtered, controlling the target material baffle to rotate, and exposing the target material to prepare the film. The redundant sputtering components can be sputtered on the back of the smooth baffle plate in the sputtering process, and other parts in the cavity can not be polluted. When the sputtering target needs to be replaced, the sample frame is controlled to rotate to the required target position by one fifth of rotation unit, and the target baffle is controlled to repeat the steps. The rotating positions of the sample frame and the target baffle do not need to be manually confirmed and adjusted, so that errors caused by manual control and naked eye judgment during substrate replacement are avoided, the sample substrate can be controlled to be in an accurate expected position, the operation is simplified, meanwhile, the burden and the loss of a rotating mechanism are reduced, and the safety and the stability of the internal environment of the instrument are enhanced.
Example two:
the magnetron sputtering reaction equipment of the embodiment is different from the magnetron sputtering reaction equipment of the embodiment I in that:
the number of the targets of the sputtering mechanism is one, and a baffle control motor is omitted; the target material baffle plate is provided with a round hole, and the round hole is opposite to the target material. Other structures can refer to the first embodiment.
Since the number of targets is only one, the target shutter does not need to be rotated to switch the targets, and therefore the shutter control motor is omitted. And due to the existence of the target baffle, the periphery of the target can be shielded during sputtering, so that the pollution in the cavity is prevented.
The specific embodiments described herein are merely illustrative of the spirit of the invention. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the invention as defined in the appended claims.
Claims (10)
1. A magnetron sputtering reaction device is characterized by comprising a sputtering mechanism, a sample frame and a stepping motor; the sputtering mechanism comprises a target material and is used for carrying out magnetron sputtering on a sample on the substrate; the sample holder comprises a plurality of substrate fixing seats which are uniformly distributed in the circumferential direction, and the substrate fixing seats are used for fixing substrates loaded with samples; the substrate fixing seat is in transmission connection with the stepping motor, and the stepping motor acts to enable the substrate fixing seat to sequentially rotate to correspond to the target material.
2. The magnetron sputtering reaction device according to claim 1, wherein the number of the targets of the sputtering mechanism is one, and the magnetron sputtering reaction device further comprises a target baffle plate, the target baffle plate is positioned between the target and the sample holder; the target material baffle is provided with a through hole, and the through hole is arranged opposite to the target material.
3. The magnetron sputtering reaction equipment according to claim 1, wherein the number of targets of the sputtering mechanism is plural, the magnetron sputtering reaction equipment further comprises a target baffle and a baffle control motor, the target baffle is in transmission connection with the baffle control motor, and the target baffle is positioned between the target and the sample holder; the target material baffle is provided with a through hole, and the baffle controls the action of the motor to enable the through hole to rotate in sequence to correspond to the required target material.
4. The magnetron sputtering reaction device as claimed in claim 2 or 3, wherein the through hole is a circular hole.
5. The magnetron sputtering reaction device as claimed in claim 1, wherein the sample holder further comprises a connecting arm and a central disk, the substrate holder is connected with the central disk through the connecting arm, and the central disk is in transmission connection with a shaft of the stepping motor.
6. The magnetron sputtering reaction device as recited in claim 5, wherein the number of the connecting arms and the number of the substrate holders are five.
7. The magnetron sputtering reaction device as claimed in claim 1, wherein the substrate holder has a mounting groove, two sides of the notch of the mounting groove are respectively provided with a slide rail step, the inner side of the notch is provided with a limit step, and the slide rail step and the limit step have a height difference; the substrate is inserted and installed in a limiting space formed by the slide rail step and the limiting step.
8. The magnetron sputtering reaction device of claim 1, further comprising a large belt pulley, a small belt pulley and a sample holder rotating shaft, wherein the small belt pulley is mounted on a shaft of the stepping motor, the large belt pulley and the central disk are coaxially connected by the sample holder rotating shaft, and the small belt pulley drives the large belt pulley to rotate.
9. The magnetron sputtering reaction device according to claim 2 or 3, further comprising a baffle motor gear, a baffle transmission gear and a baffle transmission shaft, wherein the baffle motor gear is mounted on a shaft of the baffle motor, the baffle transmission gear and the target baffle are coaxially connected by the baffle transmission shaft, and the baffle motor gear is meshed with the baffle transmission gear.
10. The magnetron sputtering reaction device as recited in claim 1, further comprising a motor mount for mounting the stepper motor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010190553.3A CN111304609A (en) | 2020-03-18 | 2020-03-18 | Magnetron sputtering reaction equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010190553.3A CN111304609A (en) | 2020-03-18 | 2020-03-18 | Magnetron sputtering reaction equipment |
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| Publication Number | Publication Date |
|---|---|
| CN111304609A true CN111304609A (en) | 2020-06-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010190553.3A Pending CN111304609A (en) | 2020-03-18 | 2020-03-18 | Magnetron sputtering reaction equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113789500A (en) * | 2021-08-04 | 2021-12-14 | 湖北三峡职业技术学院 | Ion plating device and method for automatically adjusting ion beam sputtering angle and incidence angle |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1995447A (en) * | 2006-12-29 | 2007-07-11 | 上海工程技术大学 | Anti-pollution superhigh vacuum magnetron sputtering film-plating device |
| US20140341682A1 (en) * | 2012-02-16 | 2014-11-20 | Eugene Technology Co., Ltd. | Substrate processing module and substrate processing apparatus including the same |
| CN212610875U (en) * | 2020-03-18 | 2021-02-26 | 浙江工业大学 | Magnetron sputtering reaction equipment |
-
2020
- 2020-03-18 CN CN202010190553.3A patent/CN111304609A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1995447A (en) * | 2006-12-29 | 2007-07-11 | 上海工程技术大学 | Anti-pollution superhigh vacuum magnetron sputtering film-plating device |
| US20140341682A1 (en) * | 2012-02-16 | 2014-11-20 | Eugene Technology Co., Ltd. | Substrate processing module and substrate processing apparatus including the same |
| CN212610875U (en) * | 2020-03-18 | 2021-02-26 | 浙江工业大学 | Magnetron sputtering reaction equipment |
Non-Patent Citations (1)
| Title |
|---|
| 陈远龄 等: "机床电气自动控制", 30 June 1994, 重庆大学出版社, pages: 171 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113789500A (en) * | 2021-08-04 | 2021-12-14 | 湖北三峡职业技术学院 | Ion plating device and method for automatically adjusting ion beam sputtering angle and incidence angle |
| CN113789500B (en) * | 2021-08-04 | 2023-07-25 | 湖北三峡职业技术学院 | Ion plating device and method capable of automatically adjusting sputtering angle and incidence angle of ion beam |
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