CN100447292C - Anti-pollution superhigh vacuum magnetron sputtering film-plating device - Google Patents
Anti-pollution superhigh vacuum magnetron sputtering film-plating device Download PDFInfo
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- CN100447292C CN100447292C CNB2006101482632A CN200610148263A CN100447292C CN 100447292 C CN100447292 C CN 100447292C CN B2006101482632 A CNB2006101482632 A CN B2006101482632A CN 200610148263 A CN200610148263 A CN 200610148263A CN 100447292 C CN100447292 C CN 100447292C
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- target position
- magnetron sputtering
- plate washer
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Abstract
The invention discloses a pollution-proof hyperhigh vacuum magnetic sputtering depositing device, which comprises the following parts: driving system, microcomputer control system, magnetic control sputtering chamber, upper lid, rotary shaft, sample position, sample table, target position, driving motor, target baffle and driving motor of target baffle, wherein the locating pin (7) are set on the upper lid vertically in the sputtering chamber, which mates locating groove on the upper layer of sample table; the locating pin (14) is set under the lower layer of sample table, which corresponds to locating groove (8) on the upper baffle; the upper baffle connects driving shaft through screw; one sputtering hole is opened on the upper baffle, which gears gear of handy operating rod and upper baffle rim; when the baffle is set on the target position, it connects driving motor.
Description
[technical field]
The present invention relates to the magnetron sputtering technique field, specifically a kind of anti-pollution superhigh vacuum magnetron sputtering film-plating device.
[background technology]
Sputter is by lotus energy particle bombardment target, making target atom obtain enough energy by transmission overflows from original state, perhaps discharge other high energy particle, the atom that sputters out or other high energy particles, the device that can be set at specific position is collected, thereby form rete or signal specific, the signal specific that collection device obtains can be used for characterizing the character of target, change the condition of surface of collection device, even form nano level film or coating etc., according to the principle of lorentz's force, in having orthogonal electromagnetic field, when the movement locus of charged particle will quicken along direction of an electric field, advance along magnetic line of force direction spiral.Therefore when magnetron sputtering, orthogonal electromagnetic field can improve the efficient of electronics, reduction is to the requirement of medium atmosphere such as Ar Pressure, improve efficient, the sedimentary speed of sputter, reduce the energy of deposition and atomic, so in the sputter coating technology, magnetron sputtering is because of having the sedimentation velocity height, air pressure is low, and the distinct advantages little to the heat temperature raising effect of sample obtained a large amount of research and development and application.
But, in magnetron sputtering process, lotus energy particle is to the bombardment of target, except a part of sputtered atom sample surfaces deposition film forming, the high energy particle of other forms that from target, eject, and redundant sputtered atom, can be in magnetron sputtering chamber with the state disperse of diffuse scattering, a part wherein will deposit or be injected into the internal surface of magnetron sputtering chamber, if once put into a plurality of samples in magnetron sputtering chamber, above-mentioned factor inevitably can pollute the surface that has neither part nor lot in current sputtered samples.
[summary of the invention]
Purpose of the present invention overcomes the deficiencies in the prior art, and in sputtering chamber, set up a plate washer between sample table and the target position and pollute preventing, and a kind of various grade anti-pollution superhigh vacuum magnetron sputtering film-plating that provides.
For achieving the above object, design a kind of anti-pollution superhigh vacuum magnetron sputtering film-plating device, comprise the external drive system, microcomputer control system, magnetron sputtering chamber (1), upper cover plate (9), rotation axis (8), sample position (5), sample table (6), target position (2), drive-motor (13), target position plate washer (16), target position plate washer drive-motor (20), it is characterized in that: the interior upper cover plate of sputtering chamber (1) (9) is gone up the vertical steady brace (7) of installing, sample table (6) upper strata is offered and the supporting locating slot of steady brace (7), sample table (6) lower vertical is installed steady brace (14), offer on the last plate washer (4) and the corresponding locating slot of steady brace (14) (18), last plate washer (4) connects rotation axis (8) bottom with screw (3), offer a sputter hole (17) on the last plate washer (4), gear one end of manual lever (15) runs through sputtering chamber and is meshed with the gear (19) at last plate washer (4) edge, each target position (2) top is all installed one by support bar fixed target position plate washer (16), and target position plate washer (16) connects target position plate washer drive-motor (20).Described external drive system is connected an end of drive shaft (12) by drive-motor (13), the other end of drive shaft (12) pinion(gear) (11) center that is threaded, the gear of pinion(gear) (11) is meshed with the gear of master wheel (10), and the be threaded upper end of rotation axis (8), master wheel (10) center is formed.Spacing between described target position (2) and the target position plate washer (16) is 3-8mm, and the spacing between target position and the sample position is 80-140mm.It is identical with the number of the number of the supporting locating slot of steady brace (7) and sample position that described sample table (6) upper strata is offered, and on the sample table upper strata along the circumference uniform distribution.The number that described sample table (6) lower vertical is installed steady brace (14) has 2 at least.Described target position drive-motor (20) connects microcomputer control system.Described drive-motor (13) connects microcomputer control system.
The present invention compares with prior art, when a plurality of samples in the same sputtering chamber are carried out magnetron sputtering, can reduce having neither part nor lot in the pollution level that the magnetron sputtering sample is subjected in the magnetron sputtering chamber, and is simple to operate.
[description of drawings]
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the synoptic diagram of overhead gage among the present invention.
Appointment Fig. 1 is a Figure of abstract.
Referring to Fig. 1 and Fig. 2,1 is magnetron sputtering chamber; 2 is target position, can be by the uniform a plurality of sputter target position of actual needs; 3 is screw; 4 is overhead gage; 5 is the sample position; 6 is sample table; 7 is steady brace: 8 are rotation axis; 9 is upper cover plate; 10 is master wheel; 11 is pinion(gear); 12 is drive shaft; 13 is drive-motor; 14 is steady brace, and a plurality of uniform steady braces are set on demand; 15 is manual lever; 16 is the target position baffle plate; 17 and 21 for the sputter hole, its position can with target position and sample bit alignment; 18 is the locating slot on the overhead gage, and the number of steady brace is identical under locating slot number and the sample table; 19 are distributed on the overhead gage edge for gear; 20 is target position barrier driving motor.
[embodiment]
The present invention is further illustrated below in conjunction with accompanying drawing, and the present invention is still more clearly concerning those skilled in the art.
Embodiment:
This device is mainly at the indoor target position baffle plate (16) that increased of existing magnetron sputtering, the overhead gage (4) in band sputter hole but and the manual lever (15) of manual operation overhead gage (4) running, and at the last target position barrier driving motor (20) that connects of target position baffle plate (16), target position barrier driving motor connects microcomputer, microcomputer adopts the open and close time of existing programming technique control target position baffle plate, and control rotation axis automatically by microcomputer connection external drive system and rotate, thereby drive sample position (5) rotation, function is opened and blocked to realization by computer controlled automatic target position baffle plate (16), to the sample plated film of correspondence, and accurately control sputtering power and the sputtering time that plated film is suitable for.The target position plate washer (16) of target position plate washer drive-motor (20) control makes sputter target position (2) only be exposed to magnetron sputtering chamber when plated film, the target position sputtering material is subjected to the shielding of target position plate washer (16) At All Other Times, be difficult to enter magnetron sputtering chamber, guarantee when the sputter of many target position, effectively to reduce the pollution that useless sputter causes, and can rotate location sample table (6) and incidental a plurality of samples positions (5) thereof, make magnetic control sputtering system can once prepare a plurality of samples, can rotate location overhead gage (4), when having only sputter hole (17) on the overhead gage and sample position (5) with one heart, the sputtering sedimentation plated film could take place, stoped the deposition of sputtering material in the sample position, this has effectively reduced magnetron sputtering to having neither part nor lot in the pollution of current magnetron sputtering process sample position.
Specifically, can in sputtering chamber, establish six target position, along sputtering chamber circumference uniform distribution, three oblique target position that spatter altogether wherein, three directly spatter target position, a target position baffle plate (16) is all installed in each target position top, target position baffle plate (16) is opened and is blocked by target position barrier driving motor (20) control, and fix by support bar, forming the eccentric target drone structure of centrifugal target or title thus, target position barrier driving motor (20) connects microcomputer, realization is by the Push And Release of computer control target position plate washer, target position (2) and target position baffle plate (16) be the about 5mm of spacing between the upper and lower, for starter or just at the target position of sputter, can shield the sputter effectiveness of target position effectively.
6 sample positions (5) can be fixed on the sample table (6), sample table (6) upper strata along circumference evenly offer six with the supporting locating slot of steady brace (7), about 80mm～the 140mm of spacing is adjustable between target position (2) and sample position (5), rotation axis passes upper cover plate (9), sample table under the upper cover plate (6) vertically is assemblied on the rotation axis (8), rotation axis (8) upper end screw thread is mounted on master wheel (10) center of the external drive system of the outdoor upper cover plate of magnetron sputtering (9) top, drive-motor (13) connects microcomputer, control drive shaft (12) rotates, drive shaft (12) drives pinion(gear) (11) rotation, pinion(gear) (11) drives master wheel (10) rotation again, master wheel (10) drives rotation axis (8) rotation, the sample position (5) that rotation axis (8) drives on sample table (6) and the sample table rotates together, overhead gage (4) is fixed on rotation axis (8) bottom by screw (3), when sample table (6) rotates to corresponding with samples needs position that locating slot its upper strata when aiming at upper cover plate (9) and going up the steady brace of installing (7), and during the locating slot (18) on the steady brace (14) that sample table (6) lower floor the installs aligning overhead gage, just can guarantee that sample table (6) and overhead gage (4) rotate synchronously, also can make overhead gage (4) go up the sputter hole (17) that designs by certain angle in advance and aim at sputter target position (2), thereby assurance sample position (5) is accurately aimed at one by one with bottom sputter target position (2).
The rotation of sample table (6) also can be passed through manual lever (15) and manually control except realizing by existing computer programming control external drive system.At the uniform gear in overhead gage (4) edge (19), gear one end in overhead gage gear (19) and manual lever (15) sputtering chamber is meshed, when the operator outside sputtering chamber during rotation manual operating stick (15), the gear that will drive on operating stick (15) the other end in the sputtering chamber rotates, the gear at this gear and overhead gage edge (19) engagement, thereby driving overhead gage (4) rotates, thus under the effect of manual lever (15) and rotation axis (8) and overhead gage (4) bind mode, overhead gage (4) also can be independent of sample table (6) motion, and under the effect of sample table steady brace (14), guarantee the accurate aligned relationship of sputter hole (17) and sample position (5), promptly after sample position (5) are rotated in place, handle overhead gage (4) by the outer manual joystick (15) of sputtering chamber (1) and rotate, make sputter hole (17) and sample position (5) and target position (2) concentric alignment on the overhead gage (4).
In addition, the close fit of the sidewall of magnetron sputtering chamber (1), upper cover plate (9), rotation axis (8), manual lever (15) and steady brace (7), and on the mating surface of magnetron sputtering chamber (1) sidewall and upper cover plate (9) additional macromolecular material sealing-ring, normal atmosphere is to the pressure of magnetron sputtering chamber under the vacuum, whole magnetron sputtering chamber is closed, guarantee the isolated of magnetron sputtering chamber and space outerpace, make magnetron sputtering chamber reach 7.5 * 10 with mechanical pump and molecular pump
-6Ultrahigh vacuum(HHV).
This shows, in magnetron sputtering process, can finish magnetron sputtering plating to different targets, comprise the sputter unitary film, multilayer film and spatter film altogether, it is lower to influence each other between target and the target, having neither part nor lot in influence and the pollution that the sample surfaces of current sputter procedure is subjected to is effectively improved, by computer control or manual control, sample to be coated position (5) can rotate on the corresponding target position, and it is accurate by steady brace affirmation position, a plurality of magnetron sputtering plating tasks can be finished in a sputter coating process, and the probability of the pollution that the sample surfaces that has neither part nor lot in current magnetron sputtering plating is subjected to is reduced; Under micro-processor controlled drive-motor control, accurately control sputtering time at the target position baffle plate.
Claims (7)
1, a kind of anti-pollution superhigh vacuum magnetron sputtering film-plating device, comprise the external drive system, microcomputer control system, magnetron sputtering chamber (1), upper cover plate (9), rotation axis (8), sample position (5), sample table (6), target position (2), drive-motor (13), target position plate washer (16), target position plate washer drive-motor (20), it is characterized in that: the interior upper cover plate of sputtering chamber (1) (9) is gone up the vertical steady brace (7) of installing, sample table (6) upper strata is offered and the supporting locating slot of steady brace (7), sample table (6) lower vertical is installed steady brace (14), offer on the last plate washer (4) and the corresponding locating slot of steady brace (14) (18), last plate washer (4) connects rotation axis (8) bottom with screw (3), offer a sputter hole (17) on the last plate washer (4), gear one end of manual lever (15) runs through sputtering chamber and is meshed with the gear (19) at last plate washer (4) edge, each target position (2) top is all installed one by support bar fixed target position plate washer (16), and target position plate washer (16) connects target position plate washer drive-motor (20).
2, a kind of anti-pollution superhigh vacuum magnetron sputtering film-plating device as claimed in claim 1, it is characterized in that: described external drive system is connected an end of drive shaft (12) by drive-motor (13), the other end of drive shaft (12) pinion(gear) (11) center that is threaded, pinion(gear) (11) is meshed with master wheel (10), and the be threaded upper end of rotation axis (8), master wheel (10) center is formed.
3, a kind of anti-pollution superhigh vacuum magnetron sputtering film-plating device as claimed in claim 1 is characterized in that: the spacing between described target position (2) and the target position plate washer (16) is 3-8mm, and the spacing between target position and the sample position is 80-140mm.
4, a kind of anti-pollution superhigh vacuum magnetron sputtering film-plating device as claimed in claim 1, it is characterized in that: described sample table (6) upper strata is offered identical with the number of the number of the supporting locating slot of steady brace (7) and sample position, and at sample table upper edge circumference uniform distribution.
5, a kind of anti-pollution superhigh vacuum magnetron sputtering film-plating device as claimed in claim 1 is characterized in that: the number that described sample table (6) lower vertical is installed steady brace (14) has 2 at least.
6, a kind of anti-pollution superhigh vacuum magnetron sputtering film-plating device as claimed in claim 1 is characterized in that: described target position plate washer drive-motor (20) connects microcomputer control system.
7, a kind of anti-pollution superhigh vacuum magnetron sputtering film-plating device as claimed in claim 2 is characterized in that: described drive-motor (13) connects microcomputer control system.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101482632A CN100447292C (en) | 2006-12-29 | 2006-12-29 | Anti-pollution superhigh vacuum magnetron sputtering film-plating device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2006101482632A CN100447292C (en) | 2006-12-29 | 2006-12-29 | Anti-pollution superhigh vacuum magnetron sputtering film-plating device |
Publications (2)
| Publication Number | Publication Date |
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| CN1995447A CN1995447A (en) | 2007-07-11 |
| CN100447292C true CN100447292C (en) | 2008-12-31 |
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| CNB2006101482632A Expired - Fee Related CN100447292C (en) | 2006-12-29 | 2006-12-29 | Anti-pollution superhigh vacuum magnetron sputtering film-plating device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102234783A (en) * | 2010-04-28 | 2011-11-09 | 鸿富锦精密工业（深圳）有限公司 | A target material pedestal and a film plating apparatus employing the target material pedestal |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104389158B (en) * | 2014-11-28 | 2015-08-26 | 广东欣丰科技有限公司 | Be applied to the method for textiles color gradients magnetic-control sputtering coiling plating |
| WO2019047167A1 (en) * | 2017-09-08 | 2019-03-14 | 深圳市矩阵多元科技有限公司 | High-throughput magnetron sputtering system used for preparing composite material |
| CN109457225B (en) * | 2018-12-29 | 2024-06-28 | 深圳市格罗夫科技有限公司 | Battery material coating equipment |
| CN111304609A (en) * | 2020-03-18 | 2020-06-19 | 浙江工业大学 | Magnetron sputtering reaction equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1614078A (en) * | 2003-11-04 | 2005-05-11 | 电子科技大学 | Planar magnetic sputtering-multi-station film coating apparatus |
| US20060213770A1 (en) * | 2005-03-25 | 2006-09-28 | Nobuyuki Takahashi | Sputtering device |
| CN2844137Y (en) * | 2005-08-25 | 2006-12-06 | 北京有色金属研究总院 | Multifunctional continuous film plating device |
| CN2846439Y (en) * | 2005-12-13 | 2006-12-13 | 深圳国家863计划材料表面工程技术研究开发中心 | Column cathode composite ion coating device |
| CN200992574Y (en) * | 2006-12-29 | 2007-12-19 | 上海工程技术大学 | Pollution-proof ultrahigh vacuum magnetron sputtering coating device |
-
2006
- 2006-12-29 CN CNB2006101482632A patent/CN100447292C/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1614078A (en) * | 2003-11-04 | 2005-05-11 | 电子科技大学 | Planar magnetic sputtering-multi-station film coating apparatus |
| US20060213770A1 (en) * | 2005-03-25 | 2006-09-28 | Nobuyuki Takahashi | Sputtering device |
| CN2844137Y (en) * | 2005-08-25 | 2006-12-06 | 北京有色金属研究总院 | Multifunctional continuous film plating device |
| CN2846439Y (en) * | 2005-12-13 | 2006-12-13 | 深圳国家863计划材料表面工程技术研究开发中心 | Column cathode composite ion coating device |
| CN200992574Y (en) * | 2006-12-29 | 2007-12-19 | 上海工程技术大学 | Pollution-proof ultrahigh vacuum magnetron sputtering coating device |
Non-Patent Citations (2)
| Title |
|---|
| 用一个平面磁控溅射靶合成金属多层膜. 王剑峰等.电子科技大学学报，第22卷第3期. 1993 |
| 用一个平面磁控溅射靶合成金属多层膜. 王剑峰等.电子科技大学学报，第22卷第3期. 1993 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102234783A (en) * | 2010-04-28 | 2011-11-09 | 鸿富锦精密工业（深圳）有限公司 | A target material pedestal and a film plating apparatus employing the target material pedestal |
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| CN1995447A (en) | 2007-07-11 |
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Assignee: Ralec Technology (Kunshan) Co., Ltd. Assignor: Shanghai University of Engineering Science Contract record no.: 2010320000771 Denomination of invention: Anti-pollution superhigh vacuum magnetron sputtering film-plating device Granted publication date: 20081231 License type: Exclusive License Open date: 20070711 Record date: 20100622 |
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