CN111285681A - 用于激光照明的全光谱荧光陶瓷及制备方法 - Google Patents
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Abstract
本发明公开用于激光照明的全光谱荧光陶瓷及其制备方法，所述全光谱荧光陶瓷由绿光发光陶瓷组分、黄光发光陶瓷组分及红光发光陶瓷组分组成，使得所述全光谱荧光陶瓷的光谱范围为500‑650nm。本发明的有益效果在于：具有从绿光到红光全部光谱，很有效的解决显色指数差红光和绿光成分缺失的现象。
Description
技术领域
本发明涉及激光照明用荧光材料领域，特别地是，用于激光照明的全光谱荧光陶瓷及制备方法。
背景技术
随着蓝光LD的技术日趋成熟，激光照明的概念也随之提出，2012年OSRAM公司和BMW公司首先成功将激光照明灯具安装到宝马i8车中。大家对激光照明研究的热度也随之提高。激光照明相对于传统LED照明，其具有发光效率高，结构紧凑，照射距离远等优势。但是，目前激光照明所用的荧光材料光谱多为宽光谱，其显色指数低（55左右），尤其红光成分缺失，R9为负数。
发明内容
人们一直期望解决现有技术中激光照明的色指数低（55左右），尤其红光成分缺失，但始终未能获得成功。本发明提供一种用于激光照明的全光谱荧光陶瓷及其制备方法，能有效地解决上述问题。
本发明的技术方案是这样实现的：用于激光照明的全光谱荧光陶瓷，其特征在于，所述全光谱荧光陶瓷由绿光发光陶瓷组分、黄光发光陶瓷组分及红光发光陶瓷组分组成，使得所述全光谱荧光陶瓷的光谱范围为500-650nm。
作为用于激光照明的全光谱荧光陶瓷的优选方案，所述绿光发光陶瓷组分为Ce3+掺杂LuAG（Lu3Al5O12）和/或Mn2+掺杂的AlON。
作为用于激光照明的全光谱荧光陶瓷的优选方案，所述黄光发光陶瓷组分为Ce3+掺杂的YAG（Y3Al5O12）、GYGAG（(Gd,Y)3(Al,Ga)5O12）、GYAG（(Gd,Y)3Al5O12）、TYAG（(Tb,Y)3Al5O12）、GLuAG（(Gd,Lu)3Al5O12）中的一个或多个。
作为用于激光照明的全光谱荧光陶瓷的优选方案，所述红光发光陶瓷组分为Er离子掺杂的YAG或GYGAG或LuAG（Lu3Al5O12），或Eu离子掺杂的SiAlON或M2Si5N8。
作为用于激光照明的全光谱荧光陶瓷的优选方案，在蓝光LD激发下，所述全光谱荧光陶瓷发射出的色温在4000-6000K，显色指数为75-90。
用于激光照明的全光谱荧光陶瓷的制备方法，用以制备全光谱荧光陶瓷，包含有以下步骤，
步骤S1，制备陶瓷素坯：选用绿光发光陶瓷组分、黄光发光陶瓷组分及红光发光陶瓷组分；
步骤S2，烧结陶瓷素坯：以及，
步骤S3，加工后处理陶瓷素坯。
作为用于激光照明的全光谱荧光陶瓷的制备方法的优选方案，步骤S11中，包含有，
步骤S111，分别配出绿光发光陶瓷组分、黄光发光陶瓷组分及红光发光陶瓷组分的混合粉体，其中，发光离子掺杂浓度在0.05%到5%；
步骤S112，球磨：球磨5-20小时，球磨转速150r/min-350r/min，球磨介质为氧化铝磨球，氧化铝磨球直径为1-5mm，无水乙醇作为溶剂；
步骤S113，烘干浆料，过筛；以及，
步骤S114，煅烧：烧结温度为500-1000℃，保温1-24小时。
作为用于激光照明的全光谱荧光陶瓷的制备方法的优选方案，步骤S2中，包含有，
步骤S21，素烧，去除有机物：烧结温度为600-1000℃，保温1-24小时；
步骤S22，真空烧结或热压烧结；烧结温度为1400-1850℃，保温时间5-24小时；以及，
步骤S23，退火：退火温度为1400-1550℃，保温时间10-30小时。
作为用于激光照明的全光谱荧光陶瓷的制备方法的优选方案，步骤S3中，包含有，
步骤S31，样品双面抛光，样品厚度为0.1-0.5mm；以及，
步骤S32，样品下表面镀全反膜，样品上表面镀增透膜。
与现有技术相比，本发明的有益效果至少在于：具有从绿光到红光全部光谱，很有效的解决显色指数差红光和绿光成分缺失的现象。
附图说明
图1为本发明的光谱示意图。
具体实施方式
下面通过具体的实施方式结合附图对本发明作进一步详细说明。
实施例1：
本实施例选用发光离子的掺杂浓度为0.5%，绿光成分选用Ce:LuAG，黄光成分选用Ce:YAG,红光成分选用Eu:SiAlON。按照绿光：黄光：红光成分质量比为1:2:2，按照规定的配比进行精确计算配料。将配好的粉体至于球磨罐中球磨6小时，球磨转速300r/min，球磨介质为氧化铝磨球，氧化铝磨球直径为2mm，无水乙醇作为溶剂。球磨后将球磨好的浆料烘干，然后过100目筛，得到混合物粉体，然后称取一定量混合粉体置于模具中成型对模具双向加压，成型压力2MPa。然后通过真空塑封机，将素坯真空包装好。将封好的素坯放入冷等静压机中进行冷等静压，其中压强为200MPa，保压时间为5分钟，然后将素烧后的样品进行热压烧结，压力80MPa，烧结温度为1650℃，保温时间5小时。最后对样品进行退火，退火温度为1400℃，保温时间20小时。对样品进行表面处理，样品双面抛光，样品厚度为0.3mm。对样品底面镀全反膜，对样品上表面镀增透膜，最终制备出所需样品。通过蓝光LD激发，测试发现其色温为4600K，显示指数为87。
实施例2：
本实施例选用发光离子的掺杂浓度为0.8%，绿光成分选用Ce:LuAG，黄光成分选用Ce:GYGAG,红光成分选用Er:YAG。按照绿光：黄光：红光成分质量比为1:3:2，按照规定的配比进行精确计算配料。将配好的粉体至于球磨罐中球磨12小时，球磨转速250r/min，球磨介质为氧化铝磨球，氧化铝磨球直径为2mm，无水乙醇作为溶剂。球磨后将球磨好的浆料烘干，然后过100目筛，得到混合物粉体，然后置于高纯氧化铝坩埚中放入高温马弗炉进行煅烧，烧结温度为1000℃，保温6小时。然后称取一定量混合粉体置于模具中成型对模具双向加压，成型压力2MPa。然后通过真空塑封机，将素坯真空包装好。将封好的素坯放入冷等静压机中进行冷等静压，其中压强为200MPa，保压时间为5分钟，然后将素烧后的样品进行真空烧结，烧结温度为1780℃，保温时间10小时。最后对样品进行退火，退火温度为1400℃，保温时间20小时。对样品进行表面处理，样品双面抛光，样品厚度为0.2mm。对样品底面镀全反膜，对样品上表面镀增透膜，最终制备出所需样品，通过蓝光LD激发，测试发现其色温为4300K，显示指数为83。
实施例3：
本实施例选用发光离子的掺杂浓度为0.3%。绿光成分选用Ce:LuAG，黄光成分选用Ce:GYAG,红光成分选用Eu:SiAlON。按照绿光：黄光：红光成分质量比为2:2:1，按照规定的配比进行精确计算配料。将配好的粉体至于球磨罐中球磨20小时，球磨转速150r/min，球磨介质为氧化铝磨球，氧化铝磨球直径为5mm，无水乙醇作为溶剂。球磨后将球磨好的浆料烘干，然后过100目筛，得到混合物粉体，然后称取一定量混合粉体置于模具中成型对模具双向加压，成型压力2MPa。然后通过真空塑封机，将素坯真空包装好。将封好的素坯放入冷等静压机中进行冷等静压，其中压强为200MPa，保压时间为5分钟，然后将素烧后的样品进行热压烧结，压力60MPa，烧结温度为1700℃，保温时间10小时。最后对样品进行退火，退火温度为1400℃，保温时间20小时。对样品进行表面处理，样品双面抛光，样品厚度为0.2mm。对样品底面镀全反膜，对样品上表面镀增透膜，最终制备出所需样品，通过蓝光LD激发，测试发现其色温为5500K，显示指数为77。
实施例1至3中的光谱范围为500-650nm。以实施例1为例，请参见图1的光谱图。
以上仅表达了本发明的实施方式，其描述较为具体和详细，但且不能因此而理解为对发明专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本发明构思的前提下，还可以做出若干变形和改进，这些都属于本发明的保护范围。因此，本发明专利的保护范围应以所附权利要求为准。
Claims (9)
1.用于激光照明的全光谱荧光陶瓷，其特征在于，所述全光谱荧光陶瓷由绿光发光陶瓷组分、黄光发光陶瓷组分及红光发光陶瓷组分组成，使得所述全光谱荧光陶瓷的光谱范围为500-650nm。
2.根据权利要求1所述的用于激光照明的全光谱荧光陶瓷，其特征在于，所述绿光发光陶瓷组分为Ce3+掺杂LuAG（Lu3Al5O12）和/或Mn2+掺杂的AlON。
3.根据权利要求1所述的用于激光照明的全光谱荧光陶瓷，其特征在于，所述黄光发光陶瓷组分为Ce3+掺杂的YAG（Y3Al5O12）、GYGAG（(Gd,Y)3(Al,Ga)5O12）、GYAG（(Gd,Y)3Al5O12）、TYAG（(Tb,Y)3Al5O12）、GLuAG（(Gd,Lu)3Al5O12）中的一个或多个。
4.根据权利要求1所述的用于激光照明的全光谱荧光陶瓷，其特征在于，所述红光发光陶瓷组分为Er离子掺杂的YAG或GYGAG或LuAG（Lu3Al5O12），或Eu离子掺杂的SiAlON或M2Si5N8。
5.根据权利要求1至4中任意一项所述的用于激光照明的全光谱荧光陶瓷，其特征在于，在蓝光LD激发下，所述全光谱荧光陶瓷发射出的色温在4000-6000K，显色指数为75-90。
6.用于激光照明的全光谱荧光陶瓷的制备方法，用以制备权利要求1至5中任意一项所述的全光谱荧光陶瓷，其特征在于，包含有以下步骤，
步骤S1，制备陶瓷素坯：选用绿光发光陶瓷组分、黄光发光陶瓷组分及红光发光陶瓷组分；
步骤S2，烧结陶瓷素坯：以及，
步骤S3，加工后处理陶瓷素坯。
7.根据权利要求6所述的用于激光照明的全光谱荧光陶瓷的制备方法，其特征在于，步骤S11中，包含有，
步骤S111，分别配出绿光发光陶瓷组分、黄光发光陶瓷组分及红光发光陶瓷组分的混合粉体，其中，发光离子掺杂浓度在0.05%到5%；
步骤S112，球磨：球磨5-20小时，球磨转速150-350r/min，球磨介质为氧化铝磨球，氧化铝磨球直径为1-5mm，无水乙醇作为溶剂；
步骤S113，烘干浆料，过筛；以及，
步骤S114，煅烧：烧结温度为500-1000℃，保温1-24小时。
8.根据权利要求6所述的用于激光照明的全光谱荧光陶瓷的制备方法，其特征在于，步骤S2中，包含有，
步骤S21，素烧，去除有机物：烧结温度为600-1000℃，保温1-24小时；
步骤S22，真空烧结或热压烧结；烧结温度为1400-1850℃，保温时间5-24小时；以及，
步骤S23，退火：退火温度为1400-1550℃，保温时间10-30小时。
9.根据权利要求6所述的用于激光照明的全光谱荧光陶瓷的制备方法，其特征在于，步骤S3中，包含有，
步骤S31，样品双面抛光，样品厚度为0.1-0.5mm；以及，
步骤S32，样品下表面镀全反膜，样品上表面镀增透膜。
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