CN111269016A - 一种碳化硅产品烧结方法 - Google Patents

一种碳化硅产品烧结方法 Download PDF

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CN111269016A
CN111269016A CN202010120280.5A CN202010120280A CN111269016A CN 111269016 A CN111269016 A CN 111269016A CN 202010120280 A CN202010120280 A CN 202010120280A CN 111269016 A CN111269016 A CN 111269016A
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郑恩阳
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Joint Power Shanghai Seals Co ltd
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Abstract

本发明公开的一种碳化硅产品烧结方法,包括如下步骤:(1)将氮化硼与酒精混合搅拌均匀,得到混合液A;(2)在碳化硅产品上涂覆混合液A;(3)将涂覆好混合液A的碳化硅产品进行烧制;(4)清理步骤(3)烧制后的碳化硅产品上的杂质即可。本发明的优点在于,有效、快速、方便地清除碳化硅产品烧结过程中产生的游离硅杂质,也不会对碳化硅产品造成外表伤害等不良影响,在提高生产效率的同时,也能够提升产品质量。

Description

一种碳化硅产品烧结方法
技术领域
本发明属于碳化硅产品石墨板等加工制造技术领域,具体为一种碳化硅产品烧结方法。
背景技术
碳化硅产品,主要是指石墨板,石墨板种类较多,有带槽的、带孔的,也有带倾斜斜面的,石墨板在真空烧结出炉后,其上的槽、孔或斜面位置很容易溢出多余的游离硅在石墨板、槽、孔或斜面上;在烧结后的石墨板上溢有多余的游离硅难处理,直接处理容易敲坏石墨板;放在碱处理炉内处理一次多余的游离硅不能有效的去除掉,需要反复进行在碱处理炉内处理,这样造成时间的浪费同时造成质量事故的发生;目前是按照手工打磨的方式去除多余的游离硅,在去除多余的游离硅的同时,因石墨板异性件大小不一,手工打磨方式不稳定,易造成产品报废;此时需要改变方法来提高工作效率、提高产品质量。
发明内容
为解决现有技术中碳化硅产品烧结过程中不容易去除游离硅杂质的问题,本发明提供了一种碳化硅产品烧结方法,其实现的目的为,有效、快速、方便地清除碳化硅产品烧结过程中产生的游离硅杂质,也不会对碳化硅产品造成外表伤害等不良影响,在提高生产效率的同时,也能够提升产品质量。
为了实现上述目的,本发明提供以下技术方案:本发明提供的一种碳化硅产品烧结方法,该方法包括如下步骤:
(1)将氮化硼与酒精混合搅拌均匀,得到混合液A;
(2)在碳化硅产品上涂覆混合液A;
(3)将涂覆好混合液A的碳化硅产品进行烧制;
(4)清理步骤(3)烧制后的碳化硅产品上的杂质即可。
采用本发明烧结方法,在烧结前涂覆氮化硼,后续采用现有技术烧结方法进行烧制碳化硅产品,发现在烧制后得到的产品,很容易地就能够将游离硅杂质清除,且也不会损坏碳化硅产品,减少人工操作,又提升了产品质量。
进一步的,所述步骤(1)中氮化硼与酒精的质量比为1:10。
进一步的,所述步骤(1)中搅拌的时间为2-3min。
进一步的,所述步骤(2)中在碳化硅产品上涂覆混合液A时,对碳化硅产品上的槽、孔都要进行涂覆。氮化硼涂在反应烧结碳化硅素坯带槽或孔位置,经过高温反应时多余的硅不会渗透在槽或孔的位置,氮化硼抑制多余的硅进入槽或孔的位置,从而碱处理起来非常快速,有效。
进一步的,所述步骤(4)所述步骤(4)中采用烧碱加热至380℃-400℃去除杂质。
进一步的,所述步骤(4)中烧碱的质量浓度为99%以上。
本发明采用上述技术方案,包括以下有益效果:本发明采用涂氮化硼工艺实施后,将碳化硅产品烧结后,产品损坏频率为零,并且产品中的槽、孔、斜面多余残硅几乎为零,减少人工操作的动作,产品质量得到保证,同时也提高了生产效率,降低后处理成本成本,提高了产品质量。
附图说明
图1为采用本发明方法烧制后的石墨产品。
图2为采用现有技术方法烧制后的石墨产品。
图3为采用本发明方法烧制后的另一种形状的石墨产品。
图4为采用现有技术方法烧制后的另一种形状的石墨产品。
具体实施方式
下面通过实施例的方式进一步说明本发明,但并不因此将本发明限制在所述的实施例范围之中。下列实施例中未注明具体条件的实验方法,按照常规方法和条件,或按照商品说明书选择。所用的原料或试剂都是市售可得。
实施例一:本发明提供的、一种碳化硅产品烧结方法,包括如下步骤:
(1)将氮化硼与酒精混合搅拌均匀,得到混合液A;
(2)在碳化硅产品上涂覆混合液A;涂厚会影响产品质量,易产生产品料生,标准:均匀搅拌后用毛笔/毛刷涂在需要涂的位置涂一次即可;
(3)将涂覆好混合液A的碳化硅产品进行烧制,可以采用毛刷/毛笔方便地将混合液A涂覆于碳化硅产品上;
(4)清理步骤(3)烧制后的碳化硅产品上的杂质即可。
进一步的,所述步骤(1)中氮化硼与酒精的质量比为1:10。所述步骤(1)中搅拌的时间为2-3min,用以保证搅拌均匀。所述步骤(2)中在碳化硅产品上涂覆混合液A时,对碳化硅产品上的槽、孔都要进行涂覆,可以采用毛笔方便地将碳化硅产品上的槽、孔进行涂抹,所述步骤(4)中采用烧碱加热至380℃-400℃去除杂质。所述步骤(4)中烧碱的质量浓度为99%以上。
例如采用本发明方法涂覆石墨板在槽内、孔内上与采用现有技术直接烧结相比没有残留多余的硅杂质(如图1、图3所示),因此后续在处理时不用再额外处理槽内、孔内的硅杂质,从而缩短整个碳化硅产品制作时间,而采用现有技术则槽内、孔内都残留有杂质,导致后续不好处理,延长整个碳化硅产品制作时间(如图2、图4所示)。
以下列举部分试验例,用以说明本发明寻找合适的涂覆溶液时所作的试验。
Figure BDA0002392751900000031
以上所述仅为本发明的优选实施例而已,并不用于限制本发明,对于本领域的技术人员来说,本发明可以有各种更改和变化。凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。

Claims (6)

1.一种碳化硅产品烧结方法,其特征在于,该方法包括如下步骤:
(1)将氮化硼与酒精混合搅拌均匀,得到混合液A;
(2)在碳化硅产品上涂覆混合液A;
(3)将涂覆好混合液A的碳化硅产品进行烧制;
(4)清理步骤(3)烧制后的碳化硅产品上的杂质即可。
2.根据权利要求1所述的碳化硅产品烧结方法,其特征在于,所述步骤(1)中氮化硼与酒精的质量比为1:10。
3.根据权利要求1所述的碳化硅产品烧结方法,其特征在于,所述步骤(1)中搅拌的时间为2-3min。
4.根据权利要求1所述的碳化硅产品烧结方法,其特征在于,所述步骤(2)中在碳化硅产品上涂覆混合液A时,对碳化硅产品上的槽、孔都要进行涂覆。
5.根据权利要求1所述的碳化硅产品烧结方法,其特征在于,所述步骤(4)中采用烧碱加热至380℃-400℃去除杂质。
6.根据权利要求1所述的碳化硅产品烧结方法,其特征在于,所述步骤(4)中烧碱的质量浓度为99%以上。
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CN112174675A (zh) * 2020-10-21 2021-01-05 上海德宝密封件有限公司 一种反应烧结碳化硅的制备方法
CN113105272A (zh) * 2021-04-15 2021-07-13 浙江东新新材料科技有限公司 熔盐去除反应烧结碳化硅陶瓷表面硅瘤的方法

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CN102603303A (zh) * 2012-03-29 2012-07-25 温州东迅密封科技有限公司 一种反应烧结碳化硅及其制作工艺
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CN107522487A (zh) * 2017-07-07 2017-12-29 中国人民解放军国防科学技术大学 具有SiC掺杂层的石墨材料及其制备方法
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112174675A (zh) * 2020-10-21 2021-01-05 上海德宝密封件有限公司 一种反应烧结碳化硅的制备方法
CN113105272A (zh) * 2021-04-15 2021-07-13 浙江东新新材料科技有限公司 熔盐去除反应烧结碳化硅陶瓷表面硅瘤的方法

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Application publication date: 20200612