CN111146135A - 晶片的加工方法 - Google Patents

晶片的加工方法 Download PDF

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CN111146135A
CN111146135A CN201911063925.XA CN201911063925A CN111146135A CN 111146135 A CN111146135 A CN 111146135A CN 201911063925 A CN201911063925 A CN 201911063925A CN 111146135 A CN111146135 A CN 111146135A
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wafer
sheet
polyester
frame
dividing
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原田成规
松泽稔
木内逸人
淀良彰
荒川太朗
上里昌充
河村慧美子
藤井祐介
宫井俊辉
大前卷子
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Disco Corp
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Disco Corp
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Abstract

提供晶片的加工方法，不降低品质而形成器件芯片。该晶片的加工方法将在由分割预定线划分的正面的各区域内形成有多个器件的晶片分割成各个器件芯片，其中，该晶片的加工方法具有如下的工序：聚酯系片配设工序，将晶片定位于具有对晶片进行收纳的开口的框架的该开口内，将聚酯系片配设在晶片的背面和框架的外周上；一体化工序，对该聚酯系片进行加热，通过热压接使晶片与该框架借助该聚酯系片而一体化；分割工序，沿着该分割预定线照射对于该晶片具有吸收性的波长的激光束，形成分割槽而将该晶片分割成各个器件芯片；以及拾取工序，吹送空气而将器件芯片顶起，从该聚酯系片拾取各个该器件芯片。

Description

晶片的加工方法
技术领域
本发明涉及晶片的加工方法，将由分割预定线划分而在正面的各区域内形成有多个器件的晶片分割成各个器件芯片。
背景技术
在用于移动电话或个人计算机等电子设备的器件芯片的制造工序中，首先在由半导体等材料构成的晶片的正面上设定多条交叉的分割预定线(间隔道)。并且，在由该分割预定线划分的各区域内形成IC(Integrated Circuit：集成电路)、LSI(Large-ScaleIntegration circuit：大规模集成电路)、LED(Light Emitting Diode：发光二极管)等器件。
然后，将在具有开口的环状的框架上按照封住该开口的方式粘贴的被称为划片带的粘接带粘贴于该晶片的背面上，形成晶片、粘接带以及环状的框架成为一体而得的框架单元。并且，当沿着该分割预定线对框架单元所包含的晶片进行加工而分割时，形成各个器件芯片。
在晶片的分割中例如使用激光加工装置(参照专利文献1)。激光加工装置具有隔着粘接带而对晶片进行保持的卡盘工作台、以及对该晶片照射对于晶片具有吸收性的波长的激光束的激光加工单元等。
在对晶片进行分割时，将框架单元载置于卡盘工作台上，隔着粘接带而将晶片保持于卡盘工作台。然后，一边使卡盘工作台和激光加工单元沿着与卡盘工作台的上表面平行的方向相对移动，一边从该激光加工单元对晶片照射该激光束。当照射激光束时，通过烧蚀沿着各分割预定线在晶片上形成分割槽，对晶片进行分割。
然后，将框架单元从激光加工装置搬出，实施对粘接带照射紫外线等处理而使粘接带的粘接力降低，并对器件芯片进行拾取。作为器件芯片的生产效率较高的加工装置，已知有能够利用一个装置连续地实施晶片的分割和对粘接带的紫外线照射的加工装置(参照专利文献2)。从粘接带上拾取的器件芯片被安装于规定的布线基板等上。
专利文献1：日本特开平10-305420号公报
专利文献2：日本特许第3076179号公报
粘接带例如包含由氯乙烯片等形成的基材层和配设在该基材层上的糊料层。在激光加工装置中，为了通过烧蚀加工可靠地对晶片进行分割，按照能够可靠地形成从晶片的正面至背面的分割槽的条件对晶片照射激光束。因此，在所形成的分割槽的下方及其周围，由于激光束的照射所带来的热的影响，粘接带的糊料层发生熔融，糊料层的一部分粘固在从晶片形成的器件芯片的背面侧。
在该情况下，在从粘接带拾取器件芯片时，即使实施对粘接带照射紫外线等的处理，也会在所拾取的器件芯片的背面侧残留糊料层的该一部分。因此，器件芯片的品质降低成为问题。
发明内容
本发明是鉴于该问题点而完成的，其目的在于提供晶片的加工方法，不会在所形成的器件芯片的背面侧附着糊料层，不会在器件芯片上产生由于糊料层的附着所导致的品质的降低。
根据本发明的一个方式，提供晶片的加工方法，将在由分割预定线划分的正面的各区域内形成有多个器件的晶片分割成各个器件芯片，其特征在于，该晶片的加工方法具有如下的工序：聚酯系片配设工序，将晶片定位于具有对晶片进行收纳的开口的框架的该开口内，将聚酯系片配设在该晶片的背面和该框架的外周上；一体化工序，对该聚酯系片进行加热，通过热压接使该晶片与该框架借助该聚酯系片而一体化；分割工序，沿着该分割预定线对该晶片照射对于该晶片具有吸收性的波长的激光束，形成分割槽而将该晶片分割成各个器件芯片；以及拾取工序，从该聚酯系片侧吹送空气而将器件芯片一个一个地顶起，从该聚酯系片拾取该器件芯片。
优选在该一体化工序中，通过红外线的照射来实施该热压接。
另外，优选在该一体化工序中，在实施了一体化之后，将从该框架的外周探出的聚酯系片去除。
另外，优选在该拾取工序中，对该聚酯系片进行扩展而使各器件芯片之间的间隔扩展。
另外，优选该聚酯系片是聚对苯二甲酸乙二醇酯片、聚萘二甲酸乙二醇酯片中的任意片。
另外，优选在该一体化工序中，在该聚酯系片为该聚对苯二甲酸乙二醇酯片的情况下，加热温度为250℃～270℃，在该聚酯系片为该聚萘二甲酸乙二醇酯片的情况下，加热温度为160℃～180℃。
另外，优选该晶片由Si、GaN、GaAs、玻璃中的任意材料构成。
在本发明的一个方式的晶片的加工方法中，在形成框架单元时，不使用具有糊料层的粘接带，而是使用不具有糊料层的聚酯系片而使框架和晶片一体化。借助聚酯系片而使框架和晶片一体化的一体化工序是通过热压接来实现的。
在实施了一体化工序之后，对晶片照射对于晶片具有吸收性的波长的激光束，通过烧蚀形成沿着分割预定线的分割槽而将该晶片分割。然后从聚酯系片侧吹送空气而将器件芯片一个一个地顶起，从聚酯系片拾取器件芯片。所拾取的器件芯片分别安装于规定的安装对象。另外，当在拾取时通过空气将器件芯片顶起时，能够减轻从聚酯系片剥离时施加至器件芯片的负荷。
在对晶片实施烧蚀加工时，由于激光束的照射所产生的热在分割槽的下方及其附近传递至聚酯系片。但是，聚酯系片不具有糊料层，因此不会产生该糊料层发生熔融而粘固于器件芯片的背面侧的情况。
即，根据本发明的一个方式，能够使用不具有糊料层的聚酯系片来形成框架单元，因此不需要具有糊料层的粘接带，作为结果，不产生由于糊料层的附着所导致的器件芯片的品质降低。
因此，根据本发明的一个方式，提供晶片的加工方法，不会在所形成的器件芯片的背面侧附着糊料层，不会在器件芯片上产生由于糊料层的附着所导致的品质的降低。
附图说明
图1是示意性示出晶片的立体图。
图2是示意性示出将晶片和框架定位于卡盘工作台的保持面上的情况的立体图。
图3是示意性示出聚酯系片配设工序的立体图。
图4是示意性示出一体化工序的一例的立体图。
图5是示意性示出一体化工序的另一例的立体图。
图6是示意性示出一体化工序的又一例的立体图。
图7的(A)是示意性示出将聚酯系片切断的情况的立体图，图7的(B)是示意性示出所形成的框架单元的立体图。
图8是示意性示出分割工序的立体图。
图9是示意性示出向拾取装置搬入框架单元的立体图。
图10的(A)是示意性示出固定于框架支承台上的框架单元的剖视图，图10的(B)是示意性示出拾取工序的剖视图。
标号说明
1：晶片；1a：正面；1b：背面；3：分割预定线；3a：分割槽；5：器件；7：框架；7a：开口；9：聚酯系片；9a：切断痕；11：框架单元；2：卡盘工作台；2a：保持面；2b、36a：吸引源；2c、36b：切换部；4：热风枪；4a：热风；6：加热辊；8：红外线灯；8a：红外线；10：切割器；12：激光加工装置；14：激光加工单元；14a：加工头；16：激光束；18：拾取装置；20：鼓；22：框架保持单元；24：夹具；26：框架支承台；28：杆；30：气缸；32：基座；34：顶起机构；34a：空气；36：筒夹。
具体实施方式
参照附图，对本发明的一个方式的实施方式进行说明。首先，对利用本实施方式的晶片的加工方法进行加工的晶片进行说明。图1是示意性示出晶片1的立体图。
晶片1例如是由Si(硅)、SiC(碳化硅)、GaN(氮化镓)、GaAs(砷化镓)或其他半导体等材料或者蓝宝石、玻璃、石英等材料构成的大致圆板状的基板等。该玻璃例如是碱玻璃、无碱玻璃、钠钙玻璃、铅玻璃、硼硅酸盐玻璃、石英玻璃等。
晶片1的正面1a由呈格子状排列的多条分割预定线3划分。另外，在晶片1的正面1a的由分割预定线3划分出的各区域内形成有IC、LSI或LED等器件5。在本实施方式的晶片1的加工方法中，通过烧蚀加工在晶片1上形成沿着分割预定线3的分割槽而将晶片1分割，从而形成各个器件芯片。
在将晶片1搬入至实施烧蚀加工的激光加工装置12(参照图8)之前，对晶片1、聚酯系片以及框架进行一体化而形成框架单元。晶片1按照框架单元的状态被搬入至激光加工装置而进行加工。所形成的各个器件芯片被支承于聚酯系片。然后，对聚酯系片进行扩展，从而将器件芯片之间的间隔扩展，通过拾取装置拾取器件芯片。
环状的框架7(参照图2等)例如由金属等材料形成，该框架7具有直径比晶片1的直径大的开口7a。在形成框架单元时，将晶片1定位于框架7的开口7a内，并收纳于开口7a。
聚酯系片9(参照图3等)是具有柔软性的树脂系片，正面和背面平坦。并且，聚酯系片9具有比框架7的外径大的直径，不具有糊料层。聚酯系片9是将二羧酸(具有两个羧基的化合物)和二醇(具有两个羟基的化合物)作为单体而合成的聚合物的片，例如有聚对苯二甲酸乙二醇酯片或聚萘二甲酸乙二醇酯片等对可见光透明或半透明的片。但是，聚酯系片9不限于此，也可以是不透明的。
聚酯系片9不具有粘接性，因此在室温下无法粘贴于晶片1和框架7。但是，聚酯系片9具有热塑性，因此当在一边施加规定的压力一边使聚酯系片9与晶片1和框架7接合的状态下加热至熔点附近的温度时，聚酯系片9局部地发生熔融而能够粘接于晶片1和框架7。因此，在本实施方式的晶片1的加工方法中，通过上述那样的热压接对晶片1、框架7以及聚酯系片9进行一体化而形成框架单元。
接着，对本实施方式的晶片1的加工方法的各工序进行说明。首先，为了进行使晶片1、聚酯系片9以及框架7一体化的准备而实施聚酯系片配设工序。图2是示意性示出将晶片1和框架7定位于卡盘工作台2的保持面2a上的情况的立体图。如图2所示，在上部具有保持面2a的卡盘工作台2上实施聚酯系片配设工序。
卡盘工作台2在上部中央具有直径比框架7的外径大的多孔质部件。该多孔质部件的上表面作为卡盘工作台2的保持面2a。卡盘工作台2如图3所示在内部具有一端与该多孔质部件连通的排气路，在该排气路的另一端侧配设有吸引源2b。在排气路上配设有对连通状态和切断状态进行切换的切换部2c，当切换部2c处于连通状态时，对载置于保持面2a的被保持物作用由吸引源2b产生的负压，从而将被保持物吸引保持于卡盘工作台2。
在聚酯系片配设工序中，首先如图2所示，在卡盘工作台2的保持面2a上载置晶片1和框架7。此时，使晶片1的正面1a侧朝向下方而将晶片1定位于框架7的开口7a内。接着，在晶片1的背面1b和框架7的外周配设聚酯系片9。图3是示意性示出聚酯系片配设工序的立体图。如图3所示，按照覆盖晶片1和框架7的方式在两者上配设聚酯系片9。
另外，在聚酯系片配设工序中，使用直径比卡盘工作台2的保持面2a大的聚酯系片9。这是因为，当在之后实施的一体化工序中使卡盘工作台2的负压作用于聚酯系片9时，若未通过聚酯系片9覆盖整个保持面2a，则负压会从间隙泄漏，无法对聚酯系片9适当地施加压力。
在本实施方式的晶片1的加工方法中，接着实施一体化工序，对聚酯系片9进行加热并通过热压接使晶片1和该框架7借助该聚酯系片9而一体化。图4是示意性示出一体化工序的一例的立体图。在图4中，用虚线表示能够透过对可见光透明或半透明的聚酯系片9而视认的部件。
在一体化工序中，首先使卡盘工作台2的切换部2c进行动作而成为使吸引源2b与卡盘工作台2的上部的多孔质部件连接的连通状态，将吸引源2b的负压作用于聚酯系片9。于是，通过大气压使聚酯系片9紧贴于晶片1和框架7。
接着，一边通过吸引源2b对聚酯系片9进行吸引一边对聚酯系片9进行加热而实施热压接。聚酯系片9的加热例如如图4所示那样通过配设在卡盘工作台2的上方的热风枪4来实施。
热风枪4在内部具有电热线等加热单元以及风扇等送风机构，能够对空气进行加热而喷射。一边将负压作用于聚酯系片9一边通过热风枪4从上表面对聚酯系片9提供热风4a，当将聚酯系片9加热至规定的温度时，将聚酯系片9热压接在晶片1和框架7上。
另外，聚酯系片9的加热也可以通过其他方法来实施，例如通过利用加热至规定的温度的部件从上方对晶片1和框架7进行按压来实施。图5是示意性示出一体化工序的另一例的立体图。在图5中，用虚线表示能够透过对可见光透明或半透明的聚酯系片9而视认的部件。
在图5所示的一体化工序中，例如使用在内部具有热源的加热辊6。在图5所示的一体化工序中，也是首先将吸引源2b的负压作用于聚酯系片9，通过大气压使聚酯系片9紧贴于晶片1和框架7。
然后，将加热辊6加热至规定的温度而将该加热辊6载置于卡盘工作台2的保持面2a的一端。然后，使加热辊6旋转而使加热辊6在卡盘工作台2上从该一端滚动至另一端。于是，将聚酯系片9热压接在晶片1和框架7上。此时，当通过加热辊6在下压聚酯系片9的方向上施加力时，利用比大气压大的压力实施热压接。另外，优选将加热辊6的表面用氟树脂包覆。
另外，也可以使用在内部具有热源且具有扁平的底板的熨斗状的按压部件代替加热辊6而实施聚酯系片9的热压接。在该情况下，将该按压部件加热至规定的温度而成为热板，利用该按压部件从上方对卡盘工作台2所保持的聚酯系片9进行按压。
聚酯系片9的加热还可以通过其他方法来实施。图6是示意性示出一体化工序的又一例的立体图。在图6中，用虚线表示能够透过对可见光透明或半透明的聚酯系片9而视认的部件。在图6所示的一体化工序中，使用配设在卡盘工作台2的上方的红外线灯8对聚酯系片9进行加热。红外线灯8至少能够照射聚酯系片9的材料具有吸收性的波长的红外线8a。
在图6所示的一体化工序中，也是首先将吸引源2b的负压作用于聚酯系片9，使聚酯系片9紧贴于晶片1和框架7。接着，使红外线灯8进行动作，对聚酯系片9照射红外线8a而对聚酯系片9进行加热。于是，将聚酯系片9热压接在晶片1和框架7上。
当通过任意的方法将聚酯系片9加热至其熔点附近的温度时，将聚酯系片9热压接在晶片1和框架7上。在对聚酯系片9进行了热压接之后，使切换部2c进行动作而解除卡盘工作台2的多孔质部件与吸引源2b的连通状态，从而解除卡盘工作台2的吸附。
接着，将从框架7的外周探出的聚酯系片9切断而去除。图7的(A)是示意性示出将聚酯系片9切断的情况的立体图。关于切断，如图7的(A)所示，使用圆环状的切割器10。该切割器10具有贯通孔，能够绕穿过该贯通孔的旋转轴旋转。
首先，将圆环状的切割器10定位于框架7的上方。此时，使切割器10的旋转轴与卡盘工作台2的径向对齐。接着，使切割器10下降，利用框架7和切割器10夹入聚酯系片9而将聚酯系片9切断。于是，在聚酯系片9上形成有切断痕9a。
另外，使切割器10沿着框架7在框架7的开口7a的周围绕一周，通过切断痕9a而围绕聚酯系片9的规定的区域。然后，按照残留聚酯系片9的该区域的方式将切断痕9a的外周侧的区域的聚酯系片9去除。于是，能够将包含从框架7的外周探出的区域在内的聚酯系片9的不需要的部分去除。
另外，在聚酯系片的切断中可以使用超声波切割器，可以将使上述的圆环状的切割器10按照超声波频带的频率振动的振动源与该切割器10连接。另外，在将聚酯系片9切断时，为了使切断容易，可以对该聚酯系片9进行冷却而使其硬化。如上所述，形成晶片1和框架7借助聚酯系片9而一体化而得的框架单元11。图7的(B)是示意性示出所形成的框架单元11的立体图。
另外，在实施热压接时，聚酯系片9优选被加热至其熔点以下的温度。这是因为，当加热温度超过熔点时，有时聚酯系片9发生熔融而无法维持片的形状。另外，聚酯系片9优选被加热至其软化点以上的温度。这是因为，若加热温度未达到软化点，则无法适当地实施热压接。即，聚酯系片9优选被加热至其软化点以上且其熔点以下的温度。
另外，还存在一部分的聚酯系片9不具有明确的软化点的情况。因此，在实施热压接时，聚酯系片9优选被加热至比其熔点低20℃的温度以上且其熔点以下的温度。
另外，在聚酯系片9为聚对苯二甲酸乙二醇酯片的情况下，优选加热温度为250℃～270℃。另外，在该聚酯系片9为聚萘二甲酸乙二醇酯片的情况下，优选加热温度为160℃～180℃。
这里，加热温度是指实施一体化工序时的聚酯系片9的温度。例如，在热风枪4、加热辊6、红外线灯8等热源中，实际使用能够设定输出温度的机型，但即使使用该热源对聚酯系片9进行加热，有时聚酯系片9的温度也达不到所设定的该输出温度。因此，为了将聚酯系片9加热至规定的温度，可以将热源的输出温度设定得高于聚酯系片9的熔点。
接着，在本实施方式的晶片的加工方法中，实施分割工序，对成为框架单元11的状态的晶片1进行烧蚀加工，形成沿着分割预定线3的分割槽而将该晶片1分割。分割工序例如利用图8所示的激光加工装置来实施。图8是示意性示出分割工序的立体图。
激光加工装置12具有：对晶片1进行烧蚀加工的激光加工单元14；以及对晶片1进行保持的卡盘工作台(未图示)。激光加工单元14具有能够振荡出激光的激光振荡器(未图示)，能够射出对于晶片1具有吸收性的波长的(晶片1能够吸收的波长的)激光束16。该卡盘工作台能够沿着与上表面平行的方向移动(加工进给)。
激光加工单元14将从该激光振荡器射出的激光束16照射至该卡盘工作台所保持的晶片1。激光加工单元14所具有的加工头14a具有将激光束16会聚至晶片1的规定的高度位置的功能。
在对晶片1进行烧蚀加工时，将框架单元11载置于卡盘工作台上，从而隔着聚酯系片9而将晶片1保持于卡盘工作台上。然后，使卡盘工作台旋转，使晶片1的分割预定线3与激光加工装置12的加工进给方向对齐。另外，按照将加工头14a配设在分割预定线3的延长线的上方的方式，调整卡盘工作台和激光加工单元14的相对位置。
接着，一边从激光加工单元14对晶片1照射激光束16一边使卡盘工作台和激光加工单元14沿着与卡盘工作台的上表面平行的加工进给方向相对移动。于是，沿着分割预定线3对晶片1照射激光束16，通过烧蚀在晶片1上形成沿着分割预定线3的分割槽3a。
分割步骤中的激光束16的照射条件例如如下设定。不过，激光束16的照射条件不限于此。
波长：355nm
重复频率：50kHz
平均输出：5W
进给速度：200mm/秒
在沿着一条分割预定线3实施了烧蚀加工之后，使卡盘工作台和激光加工单元14在与加工进给方向垂直的分度进给方向上相对地移动，沿着其他分割预定线3同样地实施晶片1的烧蚀加工。在沿着沿一个方向的所有分割预定线3形成了分割槽3a之后，使卡盘工作台绕与保持面垂直的轴旋转，沿着沿另一方向的分割预定线3同样地对晶片1进行烧蚀加工。
当沿着晶片1的所有分割预定线3对晶片1进行烧蚀加工时，分割步骤完成。当分割步骤完成而沿着所有分割预定线3在晶片1上形成从正面1a至背面1b的分割槽3a时，晶片1被分割而形成各个器件芯片。
当通过激光加工单元14对晶片1实施烧蚀加工时，从激光束16的被照射部位产生源自晶片1的加工屑，该加工屑飞散至该被照射部位的周围，附着在晶片1的正面1a上。即使在对晶片1实施了烧蚀加工之后通过后述的清洗单元对晶片1的正面1a进行清洗，也不容易将所附着的加工屑完全去除。当在从晶片1形成的器件芯片上残留该加工屑时，器件芯片的品质降低。
因此，可以预先在利用激光加工装置12进行烧蚀加工的晶片1的正面1a上涂布作为对晶片1的正面1a进行保护的保护膜发挥功能的水溶性的液态树脂。当将该液态树脂涂布在晶片1的正面1a上时，在实施烧蚀加工时飞散的加工屑附着于该液态树脂的上表面上，因此加工屑不直接附着于晶片1的正面1a上。并且，通过接下来说明的清洗单元将该加工屑连同该液态树脂一起去除。
激光加工装置12可以具有清洗单元(未图示)。在该情况下，通过激光加工单元14进行了烧蚀加工的晶片1可搬送至该清洗单元而通过该清洗单元进行清洗。例如，清洗单元具有：对框架单元11进行保持的清洗工作台；以及能够在框架单元11的上方往复移动的清洗水提供喷嘴。
当一边使清洗工作台绕与保持面垂直的轴旋转并从清洗水提供喷嘴对晶片1提供纯水等清洗液一边使清洗水提供喷嘴在通过该保持面的中央的上方的路径上沿水平方向往复移动时，能够对晶片1的正面1a侧进行清洗。
在本实施方式的晶片1的加工方法中，接着实施拾取工序，从聚酯系片9拾取各个该器件芯片。在拾取工序中，使用在图9下部示出的拾取装置18。图9是示意性示出向拾取装置18搬入框架单元11的立体图。
拾取装置18具有：圆筒状的鼓20，其具有比晶片1的直径大的直径；以及框架保持单元22，其包含框架支承台26。框架保持单元22的框架支承台26具有直径比该鼓20的直径大的开口，配置在与该鼓20的上端部同样的高度，从外周侧围绕该鼓20的上端部。
在框架支承台26的外周侧配设有夹具24。当将框架单元11载置于框架支承台26上并通过夹具24对框架单元11的框架7进行把持时，将框架单元11固定于框架支承台26。
框架支承台26通过沿着铅垂方向延伸的多个杆28进行支承，在各杆28的下端部配设有使该杆28升降的气缸30。多个气缸30支承于圆板状的基座32。当使各气缸30进行动作时，框架支承台26相对于鼓20降低。
在鼓20的内部配设有从下方将聚酯系片9所支承的器件芯片顶起的顶起机构34。顶起机构34具有朝向上方吹出空气34a的功能。另外，在鼓20的上方配设有能够对器件芯片进行吸引保持的筒夹36(参照图10的(B))。顶起机构34和筒夹36能够在沿着框架支承台26的上表面的水平方向上移动。另外，筒夹36经由切换部36b(参照图10的(B))而与吸引源36a(参照图10的(B))连接。
在拾取工序中，首先按照使拾取装置18的鼓20的上端的高度与框架支承台26的上表面的高度一致的方式，使气缸30进行动作而调整框架支承台26的高度。接着，将从激光加工装置12搬出的框架单元11载置于拾取装置18的鼓20和框架支承台26上。
然后，通过夹具24将框架单元11的框架7固定于框架支承台26上。图10的(A)是示意性示出固定于框架支承台26上的框架单元11的剖视图。在晶片1上通过分割步骤而形成有分割槽3a因而被分割。
接着，使气缸30进行动作而使框架保持单元22的框架支承台26相对于鼓20下降。于是，如图10的(B)所示，聚酯系片9向外周方向扩展。图10的(B)是示意性示出拾取工序的剖视图。
当聚酯系片9向外周方向扩展时，聚酯系片9所支承的各器件芯片1c之间的间隔被扩展。于是，器件芯片1c彼此不容易接触，各个器件芯片1c的拾取变得容易。然后，确定作为拾取对象的器件芯片1c，使顶起机构34移动至该器件芯片1c的下方，使筒夹36移动至该器件芯片1c的上方。
然后，使顶起机构34进行动作而从聚酯系片9侧吹送空气34a从而将该器件芯片1c顶起。然后，使切换部36b进行动作而使筒夹36与吸引源36a连通。于是，通过筒夹36对该器件芯片1c进行吸引保持，将器件芯片1c从聚酯系片9拾取。所拾取的各个器件芯片1c在之后安装于规定的布线基板等而进行使用。
另外，当在器件芯片的拾取时从该聚酯系片9侧对器件芯片吹送空气34a而将该器件芯片顶起时，可减轻从该聚酯系片9剥离器件芯片时施加至该器件芯片的负荷。
例如在使用粘接带形成框架单元11的情况下，在分割工序中，由于激光束16的照射所产生的热传递至该粘接带，粘接带的糊料层发生熔融而粘固于器件芯片的背面侧。并且，由于糊料层的附着所导致的器件芯片的品质的降低成为问题。
与此相对，根据本实施方式的晶片的加工方法，能够通过热压接而形成使用了不具有糊料层的聚酯系片的框架单元，因此不需要具有糊料层的粘接带。作为结果，不产生由于糊料层附着于背面侧所导致的器件芯片的品质降低。
另外，本发明不限于上述实施方式的记载，可以进行各种变更并实施。例如在上述实施方式中，对聚酯系片9例如是聚对苯二甲酸乙二醇酯片或聚萘二甲酸乙二醇酯片的情况进行了说明，但本发明的一个方式不限于此。例如，聚酯系片可以使用其他材料，可以是聚对苯二甲酸丙二醇酯片、聚对苯二甲酸丁二醇酯片、聚萘二甲酸丁二醇酯等。
除此以外，上述实施方式的构造、方法等只要不脱离本发明的目的的范围，则可以适当变更并实施。

Claims (7)

1.一种晶片的加工方法，将在由分割预定线划分的正面的各区域内形成有多个器件的晶片分割成各个器件芯片，其特征在于，
该晶片的加工方法具有如下的工序：
聚酯系片配设工序，将晶片定位于具有对晶片进行收纳的开口的框架的该开口内，将聚酯系片配设在该晶片的背面和该框架的外周上；
一体化工序，对该聚酯系片进行加热，通过热压接使该晶片与该框架借助该聚酯系片而一体化；
分割工序，沿着该分割预定线对该晶片照射对于该晶片具有吸收性的波长的激光束，形成分割槽而将该晶片分割成各个器件芯片；以及
拾取工序，从该聚酯系片侧吹送空气而将器件芯片一个一个地顶起，从该聚酯系片拾取该器件芯片。
2.根据权利要求1所述的晶片的加工方法，其特征在于，
在该一体化工序中，通过红外线的照射来实施该热压接。
3.根据权利要求1所述的晶片的加工方法，其特征在于，
在该一体化工序中，在实施了一体化之后，将从该框架的外周探出的聚酯系片去除。
4.根据权利要求1所述的晶片的加工方法，其特征在于，
在该拾取工序中，对该聚酯系片进行扩展而使各器件芯片之间的间隔扩展。
5.根据权利要求1所述的晶片的加工方法，其特征在于，
该聚酯系片是聚对苯二甲酸乙二醇酯片、聚萘二甲酸乙二醇酯片中的任意片。
6.根据权利要求5所述的晶片的加工方法，其特征在于，
在该一体化工序中，在该聚酯系片为该聚对苯二甲酸乙二醇酯片的情况下，加热温度为250℃～270℃，在该聚酯系片为该聚萘二甲酸乙二醇酯片的情况下，加热温度为160℃～180℃。
7.根据权利要求1所述的晶片的加工方法，其特征在于，
该晶片由Si、GaN、GaAs、玻璃中的任意材料构成。
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