CN111106068A - 一种双芯片结构及其制造方法 - Google Patents
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Abstract
本发明提供了一种双芯片结构及其制造方法,本发明的双芯片结构利用背面的凹凸结构,即多个盲孔和多个凸柱进行有效的散热和对准,同时能够实现背面减薄的目的,两芯片的背面可以错位接合在一起,减小封装体的厚度;此外,本发明的双芯片可以利用部分凸块进行电连接,且该种电连接无需在塑封层或树脂层中形成互联上下再分布层的通孔结构,传递信号路径更短。
Description
技术领域
本发明涉及半导体器件封装领域,属于H01L23/00分类号下,具体涉及一种双芯片结构及其制造方法。
背景技术
对于半导体封装,多芯片封装可以实现小型化、多功能化以及低成本化,但是随着要求的不断提升,多芯片封装的薄型化和散热性能都需要进一步提升,如何在现有硅芯片的基础上实现更小型封装、更优的散热,是本领域所一直追求目标。
发明内容
基于解决上述问题,本发明提供了一种双芯片结构的制造方法,其包括以下步骤:
(1)提供第一芯片,在所述第一芯片的背面形成阵列排布的多个盲孔,且所述多个盲孔中的至少一些盲孔的底部具有焊料层;
(2)提供第二芯片,在所述第二芯片的背面形成阵列排布的多个凸柱,且所述多个凸柱与所述多个盲孔对应排布;
(3)将所述多个凸柱的至少一些凸柱插入所述至少一些盲孔中,并进行回流,使得所述焊料层与所述至少一些凸柱焊接。
其中,在步骤(1)中,还包括在所述第一芯片中形成第一通孔,且所述第一通孔与其中一个盲孔的焊料层物理接触;在步骤(2)中,还包括在第二芯片中形成第二通孔和第三通孔,且所述第二通孔与其中一个凸柱电连接,所述第三通孔与另一个凸柱电连接。
其中,在步骤(3)中,将所述至少一些凸柱插入所述至少一些盲孔中时,所述第一芯片和第二芯片在横向上错位,具有不重叠部分,且所述另一个凸柱位于所述不重叠部分;并且进行回流之后,所述第一芯片与第二芯片通过所述第一通孔、第二通孔和介于第一通孔与第二通孔之间的焊料层传输电信号。
还包括步骤(4),利用树脂层密封所述第一芯片和第二芯片,其中所述树脂层具有相对的第一表面和第二表面,所述第一表面与所述第一芯片的正面齐平,所述第二表面与所述第二芯片的正面齐平。
还包括步骤(5),在所述树脂层内形成第四通孔,所述第四通孔与所述另一个凸柱电连接。
还包括步骤(6),在所述第一表面上形成第一布线层,所述第一布线层电连接所述第一芯片和第四通孔;在所述第二表面上形成第二布线层,所述第二布线层电连接所述第二芯片和所述第三通孔。
还包括步骤(7),在所述第一布线层上形成第一焊球,在所述第二布线层上形成第二焊球。
其中,在步骤(1)中,形成多个盲孔的具体方法为激光钻孔、湿法刻蚀或干法刻蚀,优选为激光钻孔。
其中,在步骤(2)中,形成多个凸柱的具体步骤为在第二芯片背面形成多个开口,并填充导电材料形成导电通孔,然后进行第二芯片背面的选择性刻蚀,使得所述导电通孔从所述第二芯片的背面凸出,形成多个凸柱。
根据上述方法,本发明一种双芯片结构,其包括:
第一芯片,其背面形成有阵列排布的多个盲孔,所述多个盲孔中的至少一些盲孔的底部具有焊料层;在所述第一芯片中形成有第一通孔,且所述第一通孔与其中一个盲孔的焊料层物理接触;
第二芯片,其背面形成有阵列排布的多个凸柱,且所述多个凸柱与所述多个盲孔对应排布;在第二芯片中形成有第二通孔,且所述第二通孔与其中一个凸柱电连接;
其中,所述多个凸柱的至少一些凸柱插入所述至少一些盲孔中,并且所述焊料层使得所述至少一些凸柱焊接于所述至少一些盲孔的底部,所述第一芯片和第二芯片在横向上错位,具有不重叠部分,且所述第一芯片与第二芯片通过所述第一通孔、第二通孔和介于第一通孔与第二通孔之间的焊料层传输电信号。
本发明的优点如下:
本发明的双芯片结构利用背面的凹凸结构,即多个盲孔和多个凸柱进行有效的散热和对准,同时能够实现背面减薄的目的,两芯片的背面可以错位接合在一起,减小封装体的厚度;此外,本发明的双芯片可以利用部分凸块进行电连接,且该种电连接无需在塑封层或树脂层中形成互联上下再分布层的通孔结构,传递信号路径更短。
附图说明
图1为本发明的第一芯片结构制造过程的示意图;
图2为本发明的第二芯片结构制造过程的示意图;
图3-7为本发明的双芯片结构的制造方法的示意图。
具体实施方式
本发明旨在提供一种较为薄型化、散热型较好的双芯片封装体。对于制造本发明的双芯片封装结构,首先是制造第一芯片,参见图1,制造第一芯片的具体方法包括:
参见图1的(a)图,提供第一芯片1,所述第一芯片1包括有源区2以及在有源面上的多个焊盘3。所述第一芯片1的衬底可以是常规的硅衬底、锗衬底、氮化镓衬底等。该第一芯片1可以是功率芯片,例如MOSFET、HEMT、IGBT等。
参见图1的(b)图,在所述第一芯片1的背面形成阵列排布的多个盲孔4。该盲孔4可以是圆柱形、长方形或者其他形状,且该盲孔4为矩阵型、圆阵型、中心对称型排布,优选为矩阵型排布,这样有助于后续错位接合第二芯片。该盲孔4的形成方法可以采用激光钻孔、干法刻蚀、湿法刻蚀等。
参见图1的(c)图,在所述第一芯片1中形成第一通孔5,所述第一通孔5从所述多个盲孔4的其中之一的底部露出且穿过所述有源区2。
参见图1的(d)图,在所述多个盲孔4中的至少一些盲孔的底部设置焊料层6;该些设置了焊料层6的盲孔4用于接合所述第二芯片。该些焊料层6的材质可以是锡焊料、铅锡焊料等,其可以通过丝网印刷或者刮涂的方式填充至所述盲孔4的底部。到此,形成了第一芯片1。
接着形成第二芯片,参见图1,制造第一芯片的具体方法包括:
参见图2的(a)图,提供第二芯片7,所述第二芯片7包括有源区8以及在有源面上的多个焊盘9。所述第二芯片7的衬底可以是常规的硅衬底、锗衬底、氮化镓衬底等。该第二芯片7可以是功率芯片,例如MOSFET、HEMT、IGBT等。
参见图2的(b)图,在所述第二芯片7的背面形成阵列排布的多个开口,并填充导电材料形成导电通孔10。此处形成多个开口的方法与形成第一芯片1形成多个盲孔4的方法类似,不再赘述。所述导电通孔10的孔径略小于所述盲孔4的孔径,且所述多个导电通孔10的排布方式和多个盲孔4的排布方式一致,优选为矩阵型排布。
参见图2的(c)图,在所述第二芯片7中形成第二通孔11和第三通孔12,且所述第二通孔11与其中一个导电通孔电连接,所述第三通孔12与另一个导电通孔电连接。并且,该第二通孔11贯穿所述有源区8,而所述第三通孔12则在所述有源区8的外侧,例如可以位于切割道附近。
参见图2的(c)图,然后进行第二芯片7背面的选择性刻蚀,使得所述导电通孔10从所述第二芯片7的背面凸出,形成多个凸柱13。由此,形成第二芯片7。
在形成了上述第一芯片1和第二芯片7的基础上,将两个芯片进行接合并封装,具体步骤参见图3-7,包括
参见图3,将所述多个凸柱13的至少一些凸柱插入所述多个盲孔4的至少一些盲孔中,并进行回流,使得所述焊料层6与所述至少一些凸柱焊接。其中,将所述至少一些凸柱插入所述至少一些盲孔中时,所述第一芯片1和第二芯片7在横向上错位,具有不重叠部分,且所述另一个凸柱位于所述不重叠部分;并且进行回流之后,所述第一芯片1与第二芯片7通过所述第一通孔5、第二通孔11和介于第一通孔5与第二通孔11之间的焊料层6传输电信号。
参见图4,利用树脂层14密封所述第一芯片1和第二芯片7,其中所述树脂层14具有相对的第一表面和第二表面,所述第一表面与所述第一芯片1的正面齐平,所述第二表面与所述第二芯片7的正面齐平。所述树脂层14为环氧树脂、聚酰亚胺等聚合物密封材料,可以选择模压成型形成。
参见图5,在所述树脂层14内形成第四通孔15,所述第四通孔15通过与所述另一个凸柱电连接。所述第一通孔15通过该另一个凸柱与第二芯片7电连接。且在本申请中,该第一通孔15可以形成为多个。
参见图6,在所述第一表面上形成第一布线层16,所述第一布线层16电连接所述第一芯片1和第四通孔15,其中所述第一布线层16可以包括多个介电层、布线层和通孔结构,例如可以包括介质层中的布线层18和通孔19。在所述第二表面上形成第二布线层17,所述第二布线层17电连接所述第二芯片7和所述第三通孔12,其中所述第二布线层17可以包括多个介电层、布线层和通孔结构,例如可以包括介质层中的布线层20和通孔21。
最后,参见图7,在所述第一布线层16上形成第一焊球22,在所述第二布线层17上形成第二焊球23,以引出外部连接端子。
根据上述方法,本发明一种双芯片结构,其包括:
第一芯片,其背面形成有阵列排布的多个盲孔,所述多个盲孔中的至少一些盲孔的底部具有焊料层;在所述第一芯片中形成有第一通孔,且所述第一通孔与其中一个盲孔的焊料层物理接触;
第二芯片,其背面形成有阵列排布的多个凸柱,且所述多个凸柱与所述多个盲孔对应排布;在第二芯片中形成有第二通孔,且所述第二通孔与其中一个凸柱电连接;
其中,所述多个凸柱的至少一些凸柱插入所述至少一些盲孔中,并且所述焊料层使得所述至少一些凸柱焊接于所述至少一些盲孔的底部,所述第一芯片和第二芯片在横向上错位,具有不重叠部分,且所述第一芯片与第二芯片通过所述第一通孔、第二通孔和介于第一通孔与第二通孔之间的焊料层传输电信号。
本发明的双芯片结构利用背面的凹凸结构,即多个盲孔和多个凸柱进行有效的散热和对准,同时能够实现背面减薄的目的,两芯片的背面可以错位接合在一起,减小封装体的厚度;此外,本发明的双芯片可以利用部分凸块进行电连接,且该种电连接无需在塑封层或树脂层中形成互联上下再分布层的通孔结构,传递信号路径更短。
本发明中使用的表述“示例性实施例”、“示例”等不是指同一实施例,而是被提供来着重描述不同的特定特征。然而,上述示例和示例性实施例不排除他们与其他示例的特征相组合来实现。例如,即使在另一示例中未提供特定示例的描述的情况下,除非另有陈述或与其他示例中的描述相反,否则该描述可被理解为与另一示例相关的解释。
本发明中使用的术语仅用于示出示例,而无意限制本发明。除非上下文中另外清楚地指明,否则单数表述包括复数表述。
虽然以上示出并描述了示例实施例,但对本领域技术人员将明显的是,在不脱离由权利要求限定的本发明的范围的情况下,可做出变型和改变。
Claims (10)
1.一种双芯片结构的制造方法,其包括以下步骤:
(1)提供第一芯片,在所述第一芯片的背面形成阵列排布的多个盲孔,且所述多个盲孔中的至少一些盲孔的底部具有焊料层;
(2)提供第二芯片,在所述第二芯片的背面形成阵列排布的多个凸柱,且所述多个凸柱与所述多个盲孔对应排布;
(3)将所述多个凸柱的至少一些凸柱插入所述至少一些盲孔中,并进行回流,使得所述焊料层与所述至少一些凸柱焊接。
2.根据权利要求1所述的双芯片结构的制造方法,其特征在于:在步骤(1)中,还包括在所述第一芯片中形成第一通孔,且所述第一通孔与其中一个盲孔的焊料层物理接触;在步骤(2)中,还包括在第二芯片中形成第二通孔和第三通孔,且所述第二通孔与其中一个凸柱电连接,所述第三通孔与另一个凸柱电连接。
3.根据权利要求2所述的双芯片结构的制造方法,其特征在于:在步骤(3)中,将所述至少一些凸柱插入所述至少一些盲孔中时,所述第一芯片和第二芯片在横向上错位,具有不重叠部分,且所述另一个凸柱位于所述不重叠部分;并且进行回流之后,所述第一芯片与第二芯片通过所述第一通孔、第二通孔和介于第一通孔与第二通孔之间的焊料层传输电信号。
4.根据权利要求3所述的双芯片结构的制造方法,其特征在于:还包括步骤(4),利用树脂层密封所述第一芯片和第二芯片,其中所述树脂层具有相对的第一表面和第二表面,所述第一表面与所述第一芯片的正面齐平,所述第二表面与所述第二芯片的正面齐平。
5.根据权利要求4所述的双芯片结构的制造方法,其特征在于:还包括步骤(5),在所述树脂层内形成第四通孔,所述第四通孔与所述另一个凸柱电连接。
6.根据权利要求5所述的双芯片结构的制造方法,其特征在于:还包括步骤(6),在所述第一表面上形成第一布线层,所述第一布线层电连接所述第一芯片和第四通孔;在所述第二表面上形成第二布线层,所述第二布线层电连接所述第二芯片和所述第三通孔。
7.根据权利要求6所述的双芯片结构的制造方法,其特征在于:还包括步骤(7),在所述第一布线层上形成第一焊球,在所述第二布线层上形成第二焊球。
8.根据权利要求1所述的双芯片结构的制造方法,其特征在于:在步骤(1)中,形成多个盲孔的具体方法为激光钻孔、湿法刻蚀或干法刻蚀,优选为激光钻孔。
9.根据权利要求1所述的双芯片结构的制造方法,其特征在于:在步骤(2)中,形成多个凸柱的具体步骤为在第二芯片背面形成多个开口,并填充导电材料形成导电通孔,然后进行第二芯片背面的选择性刻蚀,使得所述导电通孔从所述第二芯片的背面凸出,形成多个凸柱。
10.一种双芯片结构,其包括:
第一芯片,其背面形成有阵列排布的多个盲孔,所述多个盲孔中的至少一些盲孔的底部具有焊料层;在所述第一芯片中形成有第一通孔,且所述第一通孔与其中一个盲孔的焊料层物理接触;
第二芯片,其背面形成有阵列排布的多个凸柱,且所述多个凸柱与所述多个盲孔对应排布;在第二芯片中形成有第二通孔,且所述第二通孔与其中一个凸柱电连接;
其特征在于,所述多个凸柱的至少一些凸柱插入所述至少一些盲孔中,并且所述焊料层使得所述至少一些凸柱焊接于所述至少一些盲孔的底部,所述第一芯片和第二芯片在横向上错位,具有不重叠部分,且所述第一芯片与第二芯片通过所述第一通孔、第二通孔和介于第一通孔与第二通孔之间的焊料层传输电信号。
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