CN111092136A - 一种降低反射率的单晶太阳能电池制备方法 - Google Patents
一种降低反射率的单晶太阳能电池制备方法 Download PDFInfo
- Publication number
- CN111092136A CN111092136A CN202010015254.6A CN202010015254A CN111092136A CN 111092136 A CN111092136 A CN 111092136A CN 202010015254 A CN202010015254 A CN 202010015254A CN 111092136 A CN111092136 A CN 111092136A
- Authority
- CN
- China
- Prior art keywords
- solar cell
- laser
- single crystal
- silicon wafer
- texturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 19
- 238000002310 reflectometry Methods 0.000 title claims abstract description 16
- 238000002360 preparation method Methods 0.000 title claims abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 238000005553 drilling Methods 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 claims abstract description 8
- 238000002161 passivation Methods 0.000 claims abstract description 7
- 238000000137 annealing Methods 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000009792 diffusion process Methods 0.000 claims abstract description 4
- 238000007650 screen-printing Methods 0.000 claims abstract description 4
- 230000001603 reducing effect Effects 0.000 claims description 4
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 abstract description 11
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 abstract description 11
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 10
- 230000000694 effects Effects 0.000 abstract description 8
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 230000031700 light absorption Effects 0.000 abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 4
- 238000004080 punching Methods 0.000 abstract description 3
- 229910004205 SiNX Inorganic materials 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 241000409201 Luina Species 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/386—Removing material by boring or cutting by boring of blind holes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明公开一种降低反射率的单晶太阳能电池制备方法，包括制绒、扩散、正面激光、刻蚀、退火、背面沉积钝化膜、正面沉积减反膜、背面激光、丝网印刷和烧结步骤，其特征在于：在所述制绒步骤之前增加正面激光打孔步骤，所述正面激光打孔步骤利用激光在硅片正面打多个凹孔。与常规单晶PERC太阳能电池的生产工艺相比，本发明在制绒之前在硅片正面打孔的方法，在硅片表面形成的孔洞具有陷光作用，进一步降低硅片表面反射率，增强吸光效果，最终提高单晶硅PERC太阳能电池的短路电流和光电转换效率。
Description
技术领域
本发明涉及太阳能电池技术领域，尤其是一种降低反射率的单晶太阳能电池制备方法。
背景技术
单晶PERC太阳能电池的工艺简单、成本较低，是目前市场上最流行的高效太阳能电池之一。目前单晶PERC电池的制造流程主要是：制绒——扩散——SE正面激光——刻蚀抛光——退火——背面沉积钝化膜——正面沉积减反膜——激光开孔——背电极印刷——背电场印刷——正电极印刷——烧结。经过制绒后的硅片反射率可以达11%-15%，为了降低硅片的反射率，提高电池的吸光效果，主要有两种途径，在硅片表面镀上多层膜和形成更好的陷光结构。从制绒方面考虑时，为了形成更加均匀密集的金字塔绒面，以达到降低硅片反射率的目的，只能进一步优化制绒添加剂。但是目前应用于生产中制绒添加剂的性能改善比较缓慢，大大限制了在制绒方向单晶PERC太阳能电池提效的进程。所以如何不更换制绒添加剂的同时，又能进一步降低制绒之后硅片的反射率，提升电池的吸光效果，进而提升电池的转换效率，成为目前单晶PERC太阳能电池在制绒方面提效的难题之一。
发明内容
本发明要解决的技术问题是：传统方法制造的太阳能电池硅片反射率高的问题。
本发明解决该技术问题采用的技术方案是：
一种降低反射率的单晶太阳能电池制备方法，包括制绒、扩散、正面激光、刻蚀、退火、背面沉积钝化膜、正面沉积减反膜、背面激光、丝网印刷和烧结步骤，其特征在于：在所述制绒步骤之前增加正面激光打孔步骤，所述正面激光打孔步骤利用激光在硅片正面打多个凹孔。
作为优选，所述正面激光打孔步骤采用皮秒激光，532纳米波长，雕刻速度为4500至5000毫米每秒，激光器功率10至15瓦，重复频率40至50千赫。
作为优选，所述凹孔直径为30至120微米，所述凹孔间距为300至700微米，所述凹孔深度为4至8微米，所述凹孔数量为30000至300000个。
作为优选，所述凹孔形状为圆形。
作为优选，所述凹孔形状为方形。
本发明的有益效果是：与常规单晶PERC太阳能电池的生产工艺相比，本发明在制绒之前在硅片正面打孔的方法，在硅片表面形成的孔洞具有陷光作用。在制绒之后除了在未打孔区域会形成绒面结构，在孔洞区域也会形成 “金字塔”结构，从而改善电池表面的陷光效果，结合在电池正面镀上的SiNx层的减反射效果，进一步降低硅片表面反射率，增强吸光效果，最终提高单晶硅PERC太阳能电池的短路电流和光电转换效率。
具体实施方式
下面结合实施例，对本发明的具体实施方式作进一步详细描述。以下实施例用于说明本发明，但不用来限制本发明的范围。
一种降低反射率的单晶太阳能电池制备方法，包括如下步骤：
S1: 正面激光打孔，孔的规格范围为，圆孔直径在30-120 μm，孔间距在300-700μm，孔深度在4-8μm，孔数量为30000-300000。本发明实施例中作为优选是，使用激光在P型156.75×156.75 mm规格的单晶硅片表面进行等距、等数量相乘（311×311）的形式来打孔，孔的直径为50μm，孔间距为500μm；
S2:制绒，将硅片放在质量比为1.6%-1.9%、温度76-84℃的KOH溶液中进行制绒，腐蚀重量为0.2-0.6g，反射率为5%-12%；
S3:扩散，使用POCl3在750-900 ℃ 下扩散制备PN结，方阻为100-200Ω/□
S4:正面激光，在硅片正面进行选择性激光掺杂，硅片的方阻下降值为35-80Ω/□；
S5:刻蚀，用体积比为1:1.5-1:3的HF/HNO3溶液去除硅片背表面和侧面的PSG和N型硅，用为浓度3%-10%的HF溶液去除正面PSG层，减重控制在0.2-0.35g，反射率控制在15-32%；
S6:退火，使用热氧化退火工艺进行退火处理，温度控制在500-800℃。
S7：背面沉积钝化膜，在硅片的背表面沉积Al2O3/SiNx钝化膜，降低硅片背面复合，钝化膜的厚度为70-180nm；
S8:正面沉积减反膜，在电池整个正面，包括孔洞内制备65-90nm厚的SiNx减反膜，折射率为1.8-2.5；
S9:背面激光，利用激光对电池背面进行开槽，使铝硅形成欧姆接触，开孔率为3%-10%；
S10:丝网印刷和烧结，使用背银浆料、铝浆料和正银浆料在硅片背面形成银背电极和铝背电场，硅片正面形成银正电极，烧结烘干温度300-900℃。
采用与本发明实施例相同的S2、S3、S4、S5、S6、S7、S8、S9、S10步骤制造的太阳能电池作为对比例，测试本发明实施例和对比例的单晶PERC太阳能电池的电性能参数，测试结果如下表所示。
| 类别 | 制绒后正面反射率（%） | 效率（%） | U<sub>oc</sub>（V） | I<sub>sc</sub>（A） | FF（%） |
| 实施例 | 7.57% | 22.28 | 0.6773 | 9.891 | 81.31 |
| 对比例 | 9.2% | 22.11 | 0.6772 | 9.810 | 81.30 |
由本表所知，相比于常规单晶工艺制备的PERC太阳能电池，本发明实施例所制得的单晶PERC太阳能电池的电性能参数明显更优，短路电流提升了81mA，光电转换效率提升了0.17%。
本发明可改变为多种方式对本领域的技术人员是显而易见的，这样的改变不认为脱离本发明的范围。所有这样的对所述领域技术人员显而易见的修改将包括在本权利要求的范围之内。
Claims (5)
1.一种降低反射率的单晶太阳能电池制备方法，包括制绒、扩散、正面激光、刻蚀、退火、背面沉积钝化膜、正面沉积减反膜、背面激光、丝网印刷和烧结步骤，其特征在于：在所述制绒步骤之前增加正面激光打孔步骤，所述正面激光打孔步骤利用激光在硅片正面打多个凹孔。
2.如权利要求1所述的降低反射率的单晶太阳能电池制备方法，其特征在于：所述正面激光打孔步骤采用皮秒激光，532纳米波长，雕刻速度为4500至5000毫米每秒，激光器功率10至15瓦，重复频率40至50千赫。
3.如权利要求1所述的降低反射率的单晶太阳能电池制备方法，其特征在于：所述凹孔直径为30至120微米，所述凹孔间距为300至700微米，所述凹孔深度为4至8微米，所述凹孔数量为30000至300000个。
4.如权利要求1所述的降低反射率的单晶太阳能电池制备方法，其特征在于：所述凹孔形状为圆形。
5.如权利要求1所述的降低反射率的单晶太阳能电池制备方法，其特征在于：所述凹孔形状为方形。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010015254.6A CN111092136A (zh) | 2020-01-07 | 2020-01-07 | 一种降低反射率的单晶太阳能电池制备方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010015254.6A CN111092136A (zh) | 2020-01-07 | 2020-01-07 | 一种降低反射率的单晶太阳能电池制备方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111092136A true CN111092136A (zh) | 2020-05-01 |
Family
ID=70398951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010015254.6A Pending CN111092136A (zh) | 2020-01-07 | 2020-01-07 | 一种降低反射率的单晶太阳能电池制备方法 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111092136A (zh) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111799339A (zh) * | 2020-06-29 | 2020-10-20 | 韩华新能源（启东）有限公司 | 适用于太阳能电池的硅片的表面处理方法 |
| WO2023097973A1 (zh) * | 2021-12-03 | 2023-06-08 | 宁夏隆基乐叶科技有限公司 | 硅片及其制备方法和太阳能电池 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009121A (zh) * | 2014-05-22 | 2014-08-27 | 奥特斯维能源（太仓）有限公司 | P型晶体硅双面刻槽埋栅电池制备方法 |
| CN110137283A (zh) * | 2019-06-10 | 2019-08-16 | 通威太阳能（安徽）有限公司 | 一种增大比表面积的单晶硅电池片及其制绒方法 |
-
2020
- 2020-01-07 CN CN202010015254.6A patent/CN111092136A/zh active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104009121A (zh) * | 2014-05-22 | 2014-08-27 | 奥特斯维能源（太仓）有限公司 | P型晶体硅双面刻槽埋栅电池制备方法 |
| CN110137283A (zh) * | 2019-06-10 | 2019-08-16 | 通威太阳能（安徽）有限公司 | 一种增大比表面积的单晶硅电池片及其制绒方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111799339A (zh) * | 2020-06-29 | 2020-10-20 | 韩华新能源（启东）有限公司 | 适用于太阳能电池的硅片的表面处理方法 |
| WO2023097973A1 (zh) * | 2021-12-03 | 2023-06-08 | 宁夏隆基乐叶科技有限公司 | 硅片及其制备方法和太阳能电池 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110010721B (zh) | 一种基于se的碱抛光高效perc电池工艺 | |
| WO2020057264A1 (zh) | 太阳能电池及其制备方法 | |
| CN106449876A (zh) | 选择性发射极双面perc晶体硅太阳能电池的制作方法 | |
| CN103456837B (zh) | 局部背场钝化太阳能电池的制造方法 | |
| CN110880541A (zh) | 一种新结构n型晶硅PERT双面电池及其制备方法 | |
| CN106711239A (zh) | Perc太阳能电池的制备方法及其perc太阳能电池 | |
| CN111129221A (zh) | 一种perc太阳能电池碱抛光制备方法 | |
| CN108666376B (zh) | 一种p型背接触太阳电池及其制备方法 | |
| CN112490304A (zh) | 一种高效太阳能电池的制备方法 | |
| CN108470781A (zh) | 选择性发射极黑硅双面perc晶体硅太阳能电池的制作方法 | |
| KR20160090287A (ko) | 나노구조의 실리콘계 태양 전지 및 나노구조의 실리콘계 태양 전지의 제조 방법 | |
| CN116705915B (zh) | 一种新型双面TOPCon电池的制备方法 | |
| TW201432925A (zh) | 矽晶太陽能電池結構 | |
| CN107068777A (zh) | 一种局部铝背场太阳能电池及其制备方法 | |
| CN111933750A (zh) | 一种热氧化碱抛光se—perc太阳能电池制备方法 | |
| CN111092136A (zh) | 一种降低反射率的单晶太阳能电池制备方法 | |
| CN115498057A (zh) | 联合钝化背接触太阳能电池及其基于激光扩散的制备方法 | |
| CN102629641B (zh) | 一种背接触硅太阳能电池的制备方法 | |
| CN114050105A (zh) | 一种TopCon电池的制备方法 | |
| CN111341885A (zh) | 一种正面无副栅的单晶perc电池制备方法 | |
| CN109411565B (zh) | 太阳能电池片及其制备方法、光伏组件 | |
| JP2005136081A (ja) | 太陽電池の製造方法 | |
| CN111276569B (zh) | 一种增强perc背钝化效果的电池制作方法 | |
| CN105244417A (zh) | 一种晶硅太阳能电池及其制备方法 | |
| CN113130702B (zh) | 一种背接触式太阳能电池及其制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20200501 |