CN110942923B - 一种碳布原位生长三明治型核壳电极材料的制备方法 - Google Patents
一种碳布原位生长三明治型核壳电极材料的制备方法 Download PDFInfo
- Publication number
- CN110942923B CN110942923B CN201911209858.8A CN201911209858A CN110942923B CN 110942923 B CN110942923 B CN 110942923B CN 201911209858 A CN201911209858 A CN 201911209858A CN 110942923 B CN110942923 B CN 110942923B
- Authority
- CN
- China
- Prior art keywords
- coni
- carbon
- carbon cloth
- dissolving
- nanowire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052799 carbon Inorganic materials 0.000 title claims abstract description 20
- 239000004744 fabric Substances 0.000 title claims abstract description 16
- 238000011065 in-situ storage Methods 0.000 title claims abstract description 12
- 239000007772 electrode material Substances 0.000 title claims abstract description 11
- 238000002360 preparation method Methods 0.000 title claims abstract description 9
- 239000011258 core-shell material Substances 0.000 title claims abstract description 7
- UBEWDCMIDFGDOO-UHFFFAOYSA-N cobalt(II,III) oxide Inorganic materials [O-2].[O-2].[O-2].[O-2].[Co+2].[Co+3].[Co+3] UBEWDCMIDFGDOO-UHFFFAOYSA-N 0.000 claims abstract description 34
- 239000002131 composite material Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 9
- 230000005540 biological transmission Effects 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 20
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 claims description 15
- 239000008367 deionised water Substances 0.000 claims description 15
- 229910021641 deionized water Inorganic materials 0.000 claims description 15
- 239000002070 nanowire Substances 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 10
- VYFYYTLLBUKUHU-UHFFFAOYSA-N dopamine Chemical compound NCCC1=CC=C(O)C(O)=C1 VYFYYTLLBUKUHU-UHFFFAOYSA-N 0.000 claims description 10
- 238000001035 drying Methods 0.000 claims description 10
- 238000004070 electrodeposition Methods 0.000 claims description 10
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 10
- 239000002135 nanosheet Substances 0.000 claims description 9
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 claims description 9
- 239000003792 electrolyte Substances 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 5
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 claims description 5
- 239000004202 carbamide Substances 0.000 claims description 5
- 238000010000 carbonizing Methods 0.000 claims description 5
- GVPFVAHMJGGAJG-UHFFFAOYSA-L cobalt dichloride Chemical compound [Cl-].[Cl-].[Co+2] GVPFVAHMJGGAJG-UHFFFAOYSA-L 0.000 claims description 5
- UFMZWBIQTDUYBN-UHFFFAOYSA-N cobalt dinitrate Chemical compound [Co+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O UFMZWBIQTDUYBN-UHFFFAOYSA-N 0.000 claims description 5
- 229910001981 cobalt nitrate Inorganic materials 0.000 claims description 5
- 239000012153 distilled water Substances 0.000 claims description 5
- 229960003638 dopamine Drugs 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 claims description 5
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 5
- 239000000872 buffer Substances 0.000 claims 1
- 239000002659 electrodeposit Substances 0.000 claims 1
- 238000000840 electrochemical analysis Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 5
- 239000007983 Tris buffer Substances 0.000 description 4
- KAEHZLZKAKBMJB-UHFFFAOYSA-N cobalt;sulfanylidenenickel Chemical compound [Ni].[Co]=S KAEHZLZKAKBMJB-UHFFFAOYSA-N 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 239000003575 carbonaceous material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 239000002086 nanomaterial Substances 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910003266 NiCo Inorganic materials 0.000 description 1
- VEQPNABPJHWNSG-UHFFFAOYSA-N Nickel(2+) Chemical compound [Ni+2] VEQPNABPJHWNSG-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910001429 cobalt ion Inorganic materials 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000002484 cyclic voltammetry Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000012983 electrochemical energy storage Methods 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910001453 nickel ion Inorganic materials 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000033116 oxidation-reduction process Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000006479 redox reaction Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/46—Metal oxides
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
本发明具体涉及一种碳布原位生长三明治型Co3O4@C@CoNi2S4电极材料的制备方法。所得的Co3O4@C@CoNi2S4复合材料具有类似三明治的三层核壳结构,中间层的超薄碳层增强了四氧化三钴的导电性,同时使材料的结构稳定性提高,电沉积的CoNi2S4具有较高的比电容,形成三维网络结构为电子和离子传输和渗透提供通道和更多活性位点,从而提高电化学性能。电化学测试结果表明,在电流密度为2 A·g‑1时,单电极比容量达到2600 F·g‑1。
Description
技术领域
本发明属于超级电容器电极材料领域,具体涉及一种碳布原位生长三明治型核壳电极材料的制备方法。
背景技术
超级电容器是一种结合了传统电池的高能量存储能力和传统电容器的高功率传输出能力的电化学储能装置,具有快速充放电、高功率密度、循环寿命长、体积小、可回收、环保安全等优点,被广泛应用于电动汽车、便携式电子设备和应急电源等领域,其中电极材料是影响器件性能的关键,具有典型赝电容特征的金属氧化物和硫化物具有环境可靠,廉价易得,存储容量大等优势有望成为部分贵金属的替代品,镍钴硫化物是一种新型的超级电容器电极材料,具有丰富的氧化还原态、高电导率和大的离子传输通道等优点,结合了镍离子与钴离子在充放电过程中快速的氧化还原反应,能达到更高的比容量,但是由于其单一结构设计导致其高效的电容性能不能充分发挥,或者应用传统工艺制备电极,需要加入粘结剂从而降低其电化学性能。将具有高容量的赝电容材料与高导电性的碳材料进行复合是一种广泛应用来提高材料电化学性能的方法。碳材料的加入不仅可以提高赝电容材料的导电性,减小材料的电阻,还可以一定程度上提高材料的电化学稳定性,例如:Shen等(Adv. Energy Mater. 2015, 5, 1400977)在碳泡沫上生长NiCo2S4纳米片制备的复合材料用做超级电容器电极,在三电极体系中获得了1231 F/g (2A/g) 的比电容,且经过2000次充放电后仍然保持 90.4%的放电效率。Wen等人(J. Power. Sources 2016, 320, 28)将NiCo2S4与多壁碳纳米管复合,在三电极体系中其比电容可达2080 F/g (1 A/g),可见,碳材料的引入可大大改善材料的导电性和结构稳定性,从而提高电化学性能。
申请号为 CN201810842895.1 的国家发明专利公开了一种海绵状石墨烯/镍钴硫化物复合材料的制备方法,具体公开了通过调控复合材料的形貌,使得所制得的石墨烯/镍钴硫化物复合材料作为复合电极材料具有更大的比表面积,从而使其与电解液充分接触,大大提高了电化学性能,但此发明需要将制备的活性物质涂覆在泡沫镍上,需要粘结剂以及电极不具备一定的机械性;申请号为 CN201620874672.X 的中国发明专利公开了一种基于硫化镍钴三维分级纳米结构的赝电容器电极,具体公开了在泡沫镍基底上原位生长的多个硫化钴镍纳米片,纳米片相互连接呈蜂窝状且每片硫化钴镍纳米片上分布着多个纳米级的孔道,使该电极具有三维分级纳米结构,虽然这种稳定的结构提高了电极的倍率性能和循环稳定性,但复杂的制备工艺,且电极不具备柔性,限制了其广泛应用。
发明内容
本发明的目的在于针对现有技术不足,提供一种三明治型Co3O4@C@CoNi2S4复合材料的结构及制备方法,通过调控复合材料形貌,以得到更多有效的活性位点,使电极材料具有更高的比电容。
为解决上述技术问题,本发明采取如下技术方案:一种Co3O4@C@CoNi2S4复合材料的制备方法包括以下步骤:(1)将硝酸钴、尿素、氟化铵溶于去离子水,待充分溶解混合后转移至50 mL高压釜,将碳布(CC)放入高压釜,在120 ℃下反应5 h,超声清洗,干燥,空气中350 ℃退火2 h,得到原位生长在碳布上的Co3O4纳米线;(2) 将50-110 mg多巴胺、10 mmol/L三羟甲基氨基甲烷(Tris-buffer)溶于50 mL去离子水,调整pH约为8~9,将制得CC/Co3O4浸入溶液,室温反应12 h,去离子水充分清洗,烘干后于氮气氛围下800 ℃退火2 h,实现薄层碳对Co3O4纳米线的碳化修饰;(3) 将0.2-0.3 mol 氯化钴、0.3-0.45 mol氯化镍、0.03-0.045 mol硫脲,溶于40 mL蒸馏水中配制成电解液,采用CV电沉积法,在碳修饰的Co3O4纳米线外电沉积CoNi2S4纳米片,实现三明治型Co3O4@C@CoNi2S4复合材料的制备。
所得的Co3O4@C@CoNi2S4复合材料具有类似三明治的三层核壳结构,中间层的超薄碳层增强了四氧化三钴的导电性,同时使材料的结构稳定性提高,电沉积的CoNi2S4 具有较高的比电容,形成三维网络结构为电子和离子传输和渗透提供通道和更多活性位点,从而提高电化学性能,电化学性能测试结果表明,在电流密度为1 A·g-1时,单电极比容量达到2600 F·g-1。
附图说明
图1是实施例1中所制备的Co3O4@C@CoNi2S4复合材料XRD曲线。
图2是实施例1中所制备的Co3O4@C核壳材料的扫描电镜照片。
图3是实施例1中所制备的Co3O4@C@CoNi2S4复合材料扫描电镜照片。
图4是实施例1中所制备的Co3O4@C@CoNi2S4复合材料的循环伏安曲线。
图5是实施例1中所制备的Co3O4@C@CoNi2S4复合材料的充放电曲线。
具体实施方式
下面结合实施例对本发明的技术方案及效果作进一步描述,但是,所使用的具体方法、配方和说明并不是对本发明的限制。
实施例1:(1)将硝酸钴、尿素、氟化铵溶于去离子水,待充分溶解混合后转移至50mL高压釜,将碳布(CC)放入高压釜,在120 ℃下反应5 h,超声清洗,干燥,空气中350 ℃退火2 h,得到原位生长在碳布上的Co3O4纳米线;(2) 将50 mg多巴胺、10 mmol/L三羟甲基氨基甲烷(Tris-buffer)溶于50 mL去离子水,调整pH约为8~9,将制得CC/Co3O4浸入溶液,室温反应12 h,去离子水充分清洗,烘干后于氮气氛围下800 ℃退火2 h,实现薄层碳对Co3O4纳米线的碳化修饰;(3) 将0.2 mol 氯化钴、0.3 mol氯化镍、0.03 mol硫脲,溶于40 mL蒸馏水中配制成电解液,采用CV电沉积法,在碳修饰的Co3O4纳米线外电沉积CoNi2S4纳米片,实现三明治型Co3O4@C@CoNi2S4复合材料的制备。
实施例2:(1)将硝酸钴、尿素、氟化铵溶于去离子水,待充分溶解混合后转移至50mL高压釜,将碳布(CC)放入高压釜,在120 ℃下反应5 h,超声清洗,干燥,空气中350 ℃退火2 h,得到原位生长在碳布上的Co3O4纳米线;(2) 将70 mg多巴胺、10 mmol/L三羟甲基氨基甲烷(Tris-buffer)溶于50 mL去离子水,调整pH约为8~9,将制得CC/Co3O4浸入溶液,室温反应12 h,去离子水充分清洗,烘干后于氮气氛围下800 ℃退火2 h,实现薄层碳对Co3O4纳米线的碳化修饰;(3) 将0.2 mol 氯化钴、0.3 mol氯化镍、0.03 mol硫脲,溶于40 mL蒸馏水中配制成电解液,采用CV电沉积法,在碳修饰的Co3O4纳米线外电沉积CoNi2S4纳米片,实现三明治型Co3O4@C@CoNi2S4复合材料的制备。
实施例3:(1)将硝酸钴、尿素、氟化铵溶于去离子水,待充分溶解混合后转移至50mL高压釜,将碳布(CC)放入高压釜,在120 ℃下反应5 h,超声清洗,干燥,空气中350 ℃退火2 h,得到原位生长在碳布上的Co3O4纳米线;(2) 将110 mg多巴胺、10 mmol/L三羟甲基氨基甲烷(Tris-buffer)溶于50 mL去离子水,调整pH约为8~9,将制得CC/Co3O4浸入溶液,室温反应12 h,去离子水充分清洗,烘干后于氮气氛围下800 ℃退火2 h,实现薄层碳对Co3O4纳米线的碳化修饰;(3) 将0.3 mol 氯化钴、0.45 mol氯化镍、0.045 mol硫脲,溶于40 mL蒸馏水中配制成电解液,采用CV电沉积法,在碳修饰的Co3O4纳米线外电沉积CoNi2S4纳米片,实现三明治型Co3O4@C@CoNi2S4复合材料的制备。
Claims (2)
1.一种碳布原位生长三明治型Co3O4@C@CoNi2S4电极材料,其特征在于,所得的Co3O4@C@CoNi2S4复合材料具有类似三明治的三层核壳结构,骨架Co3O4为一维纳米线结构,中间层的超薄碳层增强了四氧化三钴的导电性,同时使材料的结构稳定性提高,电沉积的CoNi2S4 具有较高的比电容,形成三维网络结构为电子和离子传输和渗透提供通道和更多活性位点,从而提高电化学性能,在电流密度为1 A·g-1时,单电极比容量达到2600 F·g-1。
2.一种碳布原位生长三明治型Co3O4@C@CoNi2S4电极材料的制备方法,其特征在于,包括以下步骤:(1)将硝酸钴、尿素、氟化铵溶于去离子水,待充分溶解混合后转移至50 mL高压釜,将碳布CC放入高压釜,在120 ℃下反应5 h,超声清洗,干燥,空气中350 ℃退火2 h,得到原位生长在碳布上的Co3O4纳米线;(2) 将50-110 mg多巴胺、10 mmol/L三羟甲基氨基甲烷Tris-buffer溶于50 mL去离子水,调整pH为8~9,将制得CC/Co3O4浸入溶液,室温反应12h,去离子水充分清洗,烘干后于氮气氛围下800 ℃退火2 h,实现薄层碳对Co3O4纳米线的碳化修饰;(3) 将0.2-0.3 mol 氯化钴、0.3-0.45 mol氯化镍、0.03-0.045 mol硫脲,溶于40mL蒸馏水中配制成电解液,采用CV电沉积法,在碳修饰的Co3O4纳米线外电沉积CoNi2S4纳米片,实现三明治型Co3O4@C@CoNi2S4复合材料的制备,在电流密度为1 A·g-1时,单电极比容量达到2600 F·g-1。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911209858.8A CN110942923B (zh) | 2019-12-02 | 2019-12-02 | 一种碳布原位生长三明治型核壳电极材料的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911209858.8A CN110942923B (zh) | 2019-12-02 | 2019-12-02 | 一种碳布原位生长三明治型核壳电极材料的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN110942923A CN110942923A (zh) | 2020-03-31 |
CN110942923B true CN110942923B (zh) | 2021-10-08 |
Family
ID=69908457
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911209858.8A Active CN110942923B (zh) | 2019-12-02 | 2019-12-02 | 一种碳布原位生长三明治型核壳电极材料的制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110942923B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113903910A (zh) * | 2021-09-29 | 2022-01-07 | 湖北大学 | 一种碳布/四氧化三钴纳米线复合材料及其制备方法和应用 |
CN114974937B (zh) * | 2022-06-29 | 2022-11-25 | 哈尔滨理工大学 | 一种铁掺杂四氧化三钴/氮化钴异质结构纳米线电极材料的制备方法和应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105084426A (zh) * | 2014-05-19 | 2015-11-25 | 中国科学院过程工程研究所 | 一类原位生长三维多级结构四氧化三钴/碳复合微纳米材料及其可控制备方法 |
CN105084422A (zh) * | 2014-05-19 | 2015-11-25 | 中国科学院过程工程研究所 | 一类三维多级结构四氧化三钴/碳/二氧化锰复合微纳米材料及其原位可控制备方法 |
KR20190013359A (ko) * | 2017-08-01 | 2019-02-11 | 서강대학교산학협력단 | 3차원 탄소 네트워크 구조체, 이의 제조방법 및 이를 포함하는 전극 |
CN110491681A (zh) * | 2019-08-16 | 2019-11-22 | 吉林化工学院 | Co3O4/CoNi2S4三维核壳材料用于柔性超级电容器 |
-
2019
- 2019-12-02 CN CN201911209858.8A patent/CN110942923B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105084426A (zh) * | 2014-05-19 | 2015-11-25 | 中国科学院过程工程研究所 | 一类原位生长三维多级结构四氧化三钴/碳复合微纳米材料及其可控制备方法 |
CN105084422A (zh) * | 2014-05-19 | 2015-11-25 | 中国科学院过程工程研究所 | 一类三维多级结构四氧化三钴/碳/二氧化锰复合微纳米材料及其原位可控制备方法 |
KR20190013359A (ko) * | 2017-08-01 | 2019-02-11 | 서강대학교산학협력단 | 3차원 탄소 네트워크 구조체, 이의 제조방법 및 이를 포함하는 전극 |
CN110491681A (zh) * | 2019-08-16 | 2019-11-22 | 吉林化工学院 | Co3O4/CoNi2S4三维核壳材料用于柔性超级电容器 |
Also Published As
Publication number | Publication date |
---|---|
CN110942923A (zh) | 2020-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Sun et al. | A review on the synthesis of CuCo2O4-based electrode materials and their applications in supercapacitors | |
Shi et al. | Carbon materials from melamine sponges for supercapacitors and lithium battery electrode materials: a review | |
CN102013330B (zh) | 石墨烯/多孔氧化镍复合超级电容器薄膜及其制备方法 | |
Feng et al. | Construction of 3D hierarchical porous NiCo2O4/graphene hydrogel/Ni foam electrode for high-performance supercapacitor | |
CN108922790B (zh) | 一种复合材料的制备方法和应用 | |
Sun et al. | One-step construction of 3D N/P-codoped hierarchically porous carbon framework in-situ armored Mn3O4 nanoparticles for high-performance flexible supercapacitors | |
Sun et al. | Coaxial cable-like dual conductive channel strategy in polypyrrole coated perovskite lanthanum manganite for high-performance asymmetric supercapacitors | |
CN109616331A (zh) | 一种核壳型的氢氧化镍纳米片/锰钴氧化物复合电极材料及其制备方法 | |
CN110942923B (zh) | 一种碳布原位生长三明治型核壳电极材料的制备方法 | |
Wu et al. | A novel inorganic-conductive polymer core-sheath nanowire arrays as bendable electrode for advanced electrochemical energy storage | |
Ma et al. | Research and development progress of porous foam-based electrodes in advanced electrochemical energy storage devices: A critical review | |
AU2020101283A4 (en) | Method for Manufacturing Straw-Based Activated Carbon Electrode Material for Super Capacitor with Energy Storage Efficiency Enhanced Through Acid Mine Drainage | |
Prasankumar et al. | Functional carbons for energy applications | |
CN110739162B (zh) | 一种柔性超级电容器正极材料的制备方法 | |
CN106024414A (zh) | 一种无粘结剂的二氧化锰/聚吡咯复合电极、制备方法及其应用 | |
Zhao et al. | Nickel cobalt oxide nanowires‐modified hollow carbon tubular bundles for high‐performance sodium‐ion hybrid capacitors | |
Xie et al. | Freestanding needle flower structure CuCo2S4 on carbon cloth for flexible high energy supercapacitors with the gel electrolyte | |
CN112038106B (zh) | 一种电极材料及其制备方法和超级电容器电极 | |
CN110931267B (zh) | 一种镍钴钼三元金属硫化物及其制备方法和应用 | |
CN108878160B (zh) | 泡沫镍/ITO-NWs材料、超级电容器及其制备方法 | |
CN111128561A (zh) | 一种纳米结构的柔性非对称固态超级电容器及其制备方法 | |
CN114300276B (zh) | 一种Ni-Fe-S@NiCo2O4@NF复合材料及其制备方法与应用 | |
CN112125339B (zh) | 单一晶面的氧化钨与碳纳米片复合储钠材料的形成方法 | |
Meng et al. | A waste utilization strategy for preparing high-performance supercapacitor electrodes with sea urchin-like structure | |
CN107959000A (zh) | 一种柔性自支撑锂硫电池正极材料的制造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |