CN108878160B - 泡沫镍/ITO-NWs材料、超级电容器及其制备方法 - Google Patents
泡沫镍/ITO-NWs材料、超级电容器及其制备方法 Download PDFInfo
- Publication number
- CN108878160B CN108878160B CN201810645837.XA CN201810645837A CN108878160B CN 108878160 B CN108878160 B CN 108878160B CN 201810645837 A CN201810645837 A CN 201810645837A CN 108878160 B CN108878160 B CN 108878160B
- Authority
- CN
- China
- Prior art keywords
- ito
- nws
- foamed nickel
- nickel
- supercapacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 title claims abstract description 168
- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 83
- 239000000463 material Substances 0.000 title claims abstract description 50
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 239000006260 foam Substances 0.000 claims abstract description 29
- 239000002070 nanowire Substances 0.000 claims abstract description 28
- 239000003990 capacitor Substances 0.000 claims abstract description 19
- 239000008188 pellet Substances 0.000 claims abstract description 15
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000001035 drying Methods 0.000 claims abstract description 14
- 238000005566 electron beam evaporation Methods 0.000 claims abstract description 10
- 238000009210 therapy by ultrasound Methods 0.000 claims abstract description 10
- 238000002791 soaking Methods 0.000 claims abstract description 9
- 239000011324 bead Substances 0.000 claims abstract description 6
- 238000001816 cooling Methods 0.000 claims abstract description 6
- 238000001338 self-assembly Methods 0.000 claims abstract description 6
- 238000003892 spreading Methods 0.000 claims abstract description 5
- 230000007480 spreading Effects 0.000 claims abstract description 5
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 5
- 239000012498 ultrapure water Substances 0.000 claims abstract description 5
- 239000011148 porous material Substances 0.000 claims description 11
- ZOMNIUBKTOKEHS-UHFFFAOYSA-L dimercury dichloride Chemical class Cl[Hg][Hg]Cl ZOMNIUBKTOKEHS-UHFFFAOYSA-L 0.000 claims description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 5
- 239000011149 active material Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 239000007772 electrode material Substances 0.000 abstract description 9
- 238000000034 method Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 7
- 238000004146 energy storage Methods 0.000 description 6
- 238000007600 charging Methods 0.000 description 4
- 238000007599 discharging Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 238000010277 constant-current charging Methods 0.000 description 3
- 230000014759 maintenance of location Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000006479 redox reaction Methods 0.000 description 3
- 239000013543 active substance Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 238000002484 cyclic voltammetry Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000011946 reduction process Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- 229910000314 transition metal oxide Inorganic materials 0.000 description 2
- 238000004758 underpotential deposition Methods 0.000 description 2
- 239000004964 aerogel Substances 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000006261 foam material Substances 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/24—Electrodes characterised by structural features of the materials making up or comprised in the electrodes, e.g. form, surface area or porosity; characterised by the structural features of powders or particles used therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/46—Metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Composite Materials (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
本发明公开了一种泡沫镍/ITO‑NWs材料、超级电容器及其制备方法,泡沫镍/ITO‑NWs材料的制备方法包括:步骤1:将泡沫镍完全浸泡在稀盐酸中,静置后超声处理,然后取出,在真空条件下干燥;步骤2:先将PS小球平铺在超纯水的表面,通过自组装的方式转移到步骤1中预先处理过的泡沫镍表面,然后在真空、室温环境下干燥;步骤3:利用电子束蒸镀方式在PS小球模板生长ITO纳米线,然后在真空环境下自然冷却至室温,得到泡沫镍/ITO‑NWs材料。本发明的泡沫镍/ITO‑NWs材料电化学性能优异,在10mA的电流下恒流充放电,单个电极容量达到112μAh/cm2,是一种理想的超级电容器电极材料。
Description
技术领域
本发明属于超级电容技术领域,特别涉及一种泡沫镍/ITO-NWs材料、超级电容器及其制备方法。
背景技术
在当前的大数据信息时代,随着网络和电子设备的高速发展,各行业对储能装置的性能需求越来越高,这就迫切需要研发高效率、充电速率快、循环寿命长的新型储能装置来突破传统储能装置的性能瓶颈。超级电容器作为一种新型的储能装置,因其高效的大电流瞬时充电等良好的电化学性能的而被认为应用前景广阔。超级电容器一般由电解液、正负电极、隔膜三部分组成,其中正负极电极材料最大程度上决定了超级电容器的电化学性能。通常,多孔碳材料(活性炭、石墨烯气凝胶等)、过渡金属氧化物、导电聚合物是三种最常见的电极材料。根据储能原理,超级电容器可分为双电层电容器和法拉第赝电容器两种。其中,赝电容超级电容器作为一种新型储能器件,它具有高的比电容、功率密度和效率,短的充电时间,对工作环境的温度等要求低以及环境友好等多个显著的优异特性。其在军工、大小型移动电子设备等领域都潜在广泛的应用价值。
赝电容超级电容器的电极活性物质,通常为一元或多元的过渡金属氧化物及高分子导电聚合物。在电容器工作时,电极材料的表面会发生欠电位沉积及高度可逆的氧化还原反应,进而产生与电极活性物质材料氧化过程与还原过程峰值电位有关的法拉第电容。
发明内容
本发明的目的在于提供一种泡沫镍/ITO-NWs材料、超级电容器及其制备方法,将三维结构的多孔泡沫镍与ITO纳米线有机结合,形成一种新的复合纳米材料,以获得以ITO-NWs为活性材料的性能优良的超级电容器;解决了现有电极活性物质表面会发生欠电位沉积及高度可逆的氧化还原反应,进而产生与电极活性物质材料氧化过程与还原过程峰值电位有关的法拉第电容的技术问题。
为了实现上述目的,本发明采用如下技术方案:
泡沫镍/ITO-NWs材料的制备方法,包括:
步骤1:将泡沫镍完全浸泡在稀盐酸中,静置后超声处理,然后取出,在真空条件下干燥;
步骤2:先将PS小球平铺在超纯水的表面,通过自组装的方式转移到步骤1中预先处理过的泡沫镍表面,然后在真空、室温环境下干燥;
步骤3:利用电子束蒸镀方式在PS小球模板生长ITO纳米线,然后在真空环境下自然冷却至室温,得到泡沫镍/ITO-NWs材料。
进一步的,步骤1中稀盐酸的浓度为0.5mol/L。
进一步的,步骤1中泡沫镍完全浸泡在稀盐酸中,静置10min后超声20min取出,在真空条件下干燥;步骤3中利用电子束蒸镀方式生长ITO纳米线时腔室温度为300℃,速率为0.1nm/s,生长时长为2000s。
进一步的,所述泡沫镍为三维多孔泡沫结构,ITO-NWs单根形貌为针状,整体呈现三维树状结构。
进一步的,泡沫镍厚度为1.7mm,纯度为99.8%,孔隙率为95-98%,孔径为0.2-0.6mm,每英寸孔数为110,ITO-NWs中纳米线长度为200nm-2μm,直径为15-30nm。
进一步的,ITO纳米线直接生长于泡沫镍骨架,均匀密集分布于泡沫镍孔壁和表面。
基于泡沫镍/ITO-NWs材料的超级电容器,其特征在于,超级电容器的工作电极由泡沫镍/ITO-NWs材料制成。
进一步的,测试系统以铂丝为对电极,饱和甘汞为参比电极。
基于泡沫镍/ITO-NWs材料的超级电容器的制备方法,包括以下步骤:
步骤1:将泡沫镍完全浸泡在稀盐酸中,静置后超声处理,然后取出,在真空条件下干燥;
步骤2:先将PS小球平铺在超纯水的表面,通过自组装的方式转移到步骤1中预先处理过的泡沫镍表面,然后在真空、室温环境下干燥;
步骤3:利用电子束蒸镀方式在PS小球模板生长ITO纳米线,然后在真空环境下自然冷却至室温,得到泡沫镍/ITO-NWs材料;
步骤4:采用泡沫镍/ITO-NWs材料作为工作电极、铂丝为对电极、饱和甘汞为参比电极制作获得超级电容器;
步骤1中稀盐酸的浓度为0.5mol/L;步骤1中泡沫镍完全浸泡在稀盐酸中,静置10min后超声20min取出,在真空条件下干燥;
步骤3中利用电子束蒸镀方式生长ITO纳米线时腔室温度为300℃,速率为0.1nm/s,生长时长为2000s;
所述泡沫镍为三维多孔泡沫结构,ITO-NWs单根形貌为针状,整体呈现三维树状结构;泡沫镍厚度为1.7mm,纯度为99.8%,孔隙率为95-98%,孔径为0.2-0.6mm,每英寸孔数为110,ITO-NWs中纳米线长度为200nm-2μm,直径为15-30nm。
相对于现有技术,本发明具有以下有益效果:
1)本发明制备的泡沫镍/ITO-NWs材料,ITO纳米线直接均匀的生长于泡沫镍三维骨架上,密集且结合牢固,直接为金属镍与ITO-NWs的复合,无其它结构形态出现,结构均一且具有高的比表面积。
2)本发明制备的泡沫镍/ITO-NWs材料电化学性能优异,延展性良好,可弯折。
3)本发明ITO纳米线是直接基于泡沫镍进行生长制备的,泡沫镍可以为任意形状和尺寸。
4)首次实现了利用ITO材料制成纳米线形态而作为法拉第赝电容器的电极活性材料,制备出了一种理想的超级电容器电极材料。
5)本发明中,ITO纳米线直接一步制备于泡沫镍金属上,工艺简洁,可应用于工业大规模生产制备。
附图说明
图1为实施例得到的泡沫镍/ITO-NWs材料的扫描式电子显微镜(SEM)。
图2为实施例得到的泡沫镍/ITO-NWs材料与泡沫镍材料的循环伏安扫描曲线(CV)。
图3为实施例得到的泡沫镍/ITO-NWs材料作为工作电极时的恒流充放电曲线,充放电电流分别为10mA,15mA,20mA。
具体实施方式
下面面结合具体的实施例和附图对本发明作进一步说明,所述是对本发明的解释而不是限定。
氧化铟锡(ITO)是一种由不同比例的氧化铟(In2O3)和氧化锡(SnO2)构成的二元金属氧化物,通常质量比为9:1。ITO材料作为透明导电薄膜具有良好的电学及光学性能,同时ITO材料还有非常优异的化学性能:电化学窗口较宽、电化学性能稳定等一系列优势,将ITO材料制备成纳米线形貌具有较大的比表面积,在氧化还原反应中金属氧化物与溶液更加充分的接触。本专利提出一种以ITO这种二元金属氧化物为活性材料的法拉第赝电容器电极材料的制备方法,是一种电化学性能良好的超级电容器电极材料。
基于泡沫镍/ITO-NWs材料的超级电容器的制备方法,包括:
1)在手套箱中,将两块边长为0.7cm的正方形泡沫镍完全浸泡在0.5mol/L稀盐酸中,静置10min后超声20min取出,在真空条件下干燥;
2)先将PS小球平铺在超纯(UP)水的表面,通过自组装的方式转移到步骤1中预先处理过的泡沫镍表面,然后在真空、室温环境下干燥。
3)利用电子束蒸镀方式生长ITO纳米线,腔室温度为300℃,速率为0.1nm/s,生长时长为2000s。在真空环境下自然冷却至室温,得到泡沫镍/氧化铟锡纳米线(ITO-NWs)材料;
4)采用泡沫镍/ITO-NWs材料作为工作电极、铂丝为对电极、饱和甘汞为参比电极制作获得超级电容器。
本实施例中泡沫镍为三维多孔泡沫结构,厚度为1.7mm,纯度为99.8%,孔隙率为95-98%,孔径为0.2-0.6mm,每英寸孔数(PPI)为110.ITO-NWs单根形貌为针状,整体呈现三维树状结构,长度在200nm-2μm间,直径在15-30nm间。ITO-NWs密集的附着在多孔泡沫镍三维骨架表面和内部。
首先对制得的泡沫镍/ITO-NWs材料进行形貌分析,采用扫描式电子显微镜(SEM)。如图1为本实施例1得到的泡沫镍/ITO-NWs材料的扫描式电子显微镜(SEM)图,图中可以看到ITO纳米线整体形貌为三维树状结构,单根呈现针状形貌,ITO纳米线密集均匀的附着在泡沫镍骨架上,ITO纳米线的主干长度可达2μm,分枝介于200nm-2μm间。主干粗于分枝,整体直径分布于为15-30nm间。
采用三电极体系的测试方法,分别以实施例制得的泡沫镍/ITO-NWs材料和泡沫镍作为超级电容器的工作电极,铂丝为对电极,饱和甘汞为参比电极,对系统进行线性循环伏安扫描(CV)测试。图2为单纯泡沫镍材料与泡沫镍/ITO-NWs材料两组样品的CV曲线对比图,从测试结果可以看出,该泡沫镍/ITO-NWs材料具有强的法拉第赝电容特性。
对泡沫镍/ITO-NWs材料进行恒流充放电(GCD)测试;在10mA的电流下恒流充放电,单个电极容量达到112μAh/cm2;当电流密度增加到15mA时,单个电极容量达到96μAh/cm2,保持率为85.7%;当电流密度增加到20mA时,单个电极容量达到88μAh/cm2,保持率为78.6%;如图3为实施例得到的泡沫镍/ITO-NWs材料作为电极时的恒流充放电曲线(GCD),测试电流密度10mA,循环测试1000次后,比电容保持率为90%以上,其循环稳定性极其优异。
显然,尽管本发明的内容就其公开的具体实施方式作出了完整而清晰的描述,但其不仅限于此,以上所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。对于所属技术领域的人员来说,通过这些表述的指导而对本发明作出改进和替代所获得的所有其他实施例,包含在本发明之中。
Claims (8)
1.基于泡沫镍/ITO-NWs材料的超级电容器,其特征在于,超级电容器的工作电极由泡沫镍/ITO-NWs材料制成;泡沫镍作为工作电极的集流体,ITO-NWs作为工作电极的活性材料;
所述泡沫镍/ITO-NWs材料的制备方法包括:
步骤1:将泡沫镍完全浸泡在稀盐酸中,静置后超声处理,然后取出,在真空条件下干燥;
步骤2:先将PS小球平铺在超纯水的表面,通过自组装的方式转移到步骤1中预先处理过的泡沫镍表面,然后在真空、室温环境下干燥;
步骤3:利用电子束蒸镀方式基于PS小球模板生长ITO纳米线,然后在真空环境下自然冷却至室温,得到泡沫镍/ITO-NWs材料。
2.根据权利要求1所述的基于泡沫镍/ITO-NWs材料的超级电容器,其特征在于,步骤1中稀盐酸的浓度为0.5mol/L。
3.根据权利要求1所述的基于泡沫镍/ITO-NWs材料的超级电容器,其特征在于,步骤1中泡沫镍完全浸泡在稀盐酸中,静置10min后超声20min取出,在真空条件下干燥;步骤3中利用电子束蒸镀方式生长ITO纳米线时腔室温度为300℃,速率为0.1nm/s,生长时长为2000s。
4.根据权利要求1所述的基于泡沫镍/ITO-NWs材料的超级电容器,其特征在于,所述泡沫镍为三维多孔泡沫结构,ITO-NWs单根形貌为针状,整体呈现三维树状结构。
5.根据权利要求1所述的基于泡沫镍/ITO-NWs材料的超级电容器,其特征在于,泡沫镍厚度为1.7mm,纯度为99.8%,孔隙率为95-98%,孔径为0.2-0.6mm,每英寸孔数为110,ITO-NWs中纳米线长度为200nm-2μm,直径为15-30nm。
6.根据权利要求1所述的基于泡沫镍/ITO-NWs材料的超级电容器,其特征在于,ITO纳米线直接生长于泡沫镍骨架,均匀密集分布于泡沫镍孔壁和表面。
7.根据权利要求1所述的基于泡沫镍/ITO-NWs材料的超级电容器,其特征在于,所述超级电容器以泡沫镍/ITO-NWs材料作为工作电极,铂丝为对电极,饱和甘汞为参比电极。
8.基于泡沫镍/ITO-NWs材料的超级电容器的制备方法,其特征在于,包括以下步骤:
步骤1:将泡沫镍完全浸泡在稀盐酸中,静置后超声处理,然后取出,在真空条件下干燥;
步骤2:先将PS小球平铺在超纯水的表面,通过自组装的方式转移到步骤1中预先处理过的泡沫镍表面,然后在真空、室温环境下干燥;
步骤3:利用电子束蒸镀方式在PS小球模板生长ITO纳米线,然后在真空环境下自然冷却至室温,得到泡沫镍/ITO-NWs材料;
步骤4:采用泡沫镍/ITO-NWs材料作为工作电极制作获得超级电容器;
步骤1中稀盐酸的浓度为0.5mol/L;步骤1中泡沫镍完全浸泡在稀盐酸中,静置10min后超声20min取出,在真空条件下干燥;
步骤3中利用电子束蒸镀方式生长ITO纳米线时腔室温度为300℃,速率为0.1nm/s,生长时长为2000s;
所述泡沫镍为三维多孔泡沫结构,ITO-NWs单根形貌为针状,整体呈现三维树状结构;泡沫镍厚度为1.7mm,纯度为99.8%,孔隙率为95-98%,孔径为0.2-0.6mm,每英寸孔数为110,ITO-NWs中纳米线长度为200nm-2μm,直径为15-30nm。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810645837.XA CN108878160B (zh) | 2018-06-21 | 2018-06-21 | 泡沫镍/ITO-NWs材料、超级电容器及其制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810645837.XA CN108878160B (zh) | 2018-06-21 | 2018-06-21 | 泡沫镍/ITO-NWs材料、超级电容器及其制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108878160A CN108878160A (zh) | 2018-11-23 |
CN108878160B true CN108878160B (zh) | 2020-03-17 |
Family
ID=64340127
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810645837.XA Active CN108878160B (zh) | 2018-06-21 | 2018-06-21 | 泡沫镍/ITO-NWs材料、超级电容器及其制备方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108878160B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109449002B (zh) * | 2018-11-28 | 2020-05-05 | 北京大学 | 一种改性Ti3C2Tx材料及其制备和应用 |
US20220165510A1 (en) * | 2019-03-25 | 2022-05-26 | Cellmobility, Inc. | Metal Foam Capacitors and Supercapacitors |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103258656A (zh) * | 2013-04-25 | 2013-08-21 | 华中科技大学 | 一种基于泡沫镍的超级电容器电极的制备方法及其产品 |
CN104252970A (zh) * | 2014-10-17 | 2014-12-31 | 武汉理工大学 | 三维网络结构Co3O4-石墨烯@镍钴双氢氧化物复合材料及其制备方法和应用 |
US9773621B1 (en) * | 2011-11-22 | 2017-09-26 | The United States Of America As Represented By The Secretary Of The Navy | High surface area nano fibers for supercapacitor devices |
CN107785181A (zh) * | 2017-06-30 | 2018-03-09 | 江苏大学 | 一种超级电容器电极材料及其制备方法 |
-
2018
- 2018-06-21 CN CN201810645837.XA patent/CN108878160B/zh active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9773621B1 (en) * | 2011-11-22 | 2017-09-26 | The United States Of America As Represented By The Secretary Of The Navy | High surface area nano fibers for supercapacitor devices |
CN103258656A (zh) * | 2013-04-25 | 2013-08-21 | 华中科技大学 | 一种基于泡沫镍的超级电容器电极的制备方法及其产品 |
CN104252970A (zh) * | 2014-10-17 | 2014-12-31 | 武汉理工大学 | 三维网络结构Co3O4-石墨烯@镍钴双氢氧化物复合材料及其制备方法和应用 |
CN107785181A (zh) * | 2017-06-30 | 2018-03-09 | 江苏大学 | 一种超级电容器电极材料及其制备方法 |
Non-Patent Citations (1)
Title |
---|
Fabrication and application of indium-tin-oxide nanowire networks by polystyrene-assisted growth;Qiang Li;《Scientific Reports》;20170509;第7卷;摘要、文章第1-8页,图1-4 * |
Also Published As
Publication number | Publication date |
---|---|
CN108878160A (zh) | 2018-11-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Zhong et al. | Nickel cobalt manganese ternary carbonate hydroxide nanoflakes branched on cobalt carbonate hydroxide nanowire arrays as novel electrode material for supercapacitors with outstanding performance | |
CN105047423B (zh) | 一种柔性对称型赝电容超级电容器及其制备方法 | |
Bavio et al. | Flexible symmetric and asymmetric supercapacitors based in nanocomposites of carbon cloth/polyaniline-carbon nanotubes | |
Zhang et al. | Immobilization of NiS nanoparticles on N-doped carbon fiber aerogels as advanced electrode materials for supercapacitors | |
Shi et al. | Low cost and flexible mesh-based supercapacitors for promising large-area flexible/wearable energy storage | |
Zhang et al. | Biosorption-directed integration of hierarchical CoO/C composite with nickel foam for high-performance supercapacitor | |
CN103854878A (zh) | 一种基于聚吡咯/二氧化锰/碳布的超级电容器及其制备方法 | |
CN102938331A (zh) | 一种泡沫镍基MnO2/C复合电极材料及其制备方法 | |
Ye et al. | Facile synthesis of hierarchical CuO nanoflower for supercapacitor electrodes | |
Yuan et al. | Flexible electrochemical capacitors based on polypyrrole/carbon fibers via chemical polymerization of pyrrole vapor | |
Li et al. | Observably boosted electrochemical performances of roughened graphite sheet/polyaniline electrodes for use in flexible supercapacitors | |
Zhou et al. | High areal capacitance three-dimensional Ni@ Ni (OH) 2 foams via in situ oxidizing Ni foams in mild aqueous solution | |
CN106229165A (zh) | 用于超级电容器的NiCo2O4@MnMoO4核壳结构多孔纳米材料及其制备方法 | |
CN106206082B (zh) | 具有超电容储能特性的氧化镍/石墨烯复合电极的制备方法及应用 | |
CN107170589A (zh) | 一种MnO2系三元复合超级电容器电极材料的制备方法 | |
CN109786135A (zh) | 一种氧化铜@钼酸镍/泡沫铜复合电极材料及其制备方法 | |
Wang et al. | Network-like holey NiCo 2 O 4 nanosheet arrays on Ni foam synthesized by electrodeposition for high-performance supercapacitors | |
CN108878160B (zh) | 泡沫镍/ITO-NWs材料、超级电容器及其制备方法 | |
CN104282445A (zh) | 超级电容器用四氧化三钴氮掺杂碳纳米管复合电极材料及其制备方法 | |
CN106531470B (zh) | 一种柔性自支撑碳纸超级电容器电极材料的制备方法与应用 | |
CN111593347A (zh) | 一种柔性复合薄膜材料及其制备方法 | |
CN109326457B (zh) | 基于活性炭/叶绿素铜钠复合电极的超级电容器及其制备方法 | |
CN110797201B (zh) | 聚苯胺—二氧化锰复合材料及其制备方法和在电化学储能领域的应用 | |
CN108461301B (zh) | 一种MnO2-PPy/H-TiO2三元核壳杂化阵列电极材料及其制备方法 | |
CN106024405A (zh) | 一种无模板电沉积法制备硒化钴超级电容器材料的方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |