CN110867506B - 一种消膜剂的应用 - Google Patents
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Abstract
本发明涉及一种消膜剂、其制备方法及应用,该消膜剂包括稀释剂:50质量份至70质量份;工业酒精:30质量份至40质量份;丙酮:10至30质量份;其中稀释剂包括醋酸甲酯和工业酒精。本发明的消膜剂用于制备单面发光LED芯片的封装件时,能够有效清除芯片表面多余的遮光剂残余膜,且清除残余膜后,后续涂覆荧光胶烘烤不会发泡,加强芯片与荧光膜的粘结度。
Description
技术领域
本发明涉及LED芯片封装技术领域,具体涉及一种消膜剂、其制备方法和应用。
背景技术
在LED灯的制造过程中,需要对LED芯片进行封装。传统的LED芯片封装工艺是对LED芯片逐个点胶,较为费时,生产成本高,而且难以控制并且减少LED芯片封装的体积以及厚度。新型的芯片级封装技术即CSP能够减少封装体积,使封装件更薄,有助于散热。现有的CSP LED通常是五面发光,即LED芯片的顶面和四个侧面均能发光,五面发光的工艺相对比较简单,但满足不了对产品出光的角度、一致性等要求。单面发光的LED芯片需要使用遮光胶遮挡LED芯片的四个侧面,然而在制备单面发光LED芯片封装件时,LED芯片的上表面即发光面常常会沾有遮光胶,影响发光效果。
发明内容
针对现有技术的不足,本发明的第一目的是提供一种消膜剂,该消膜剂能够有效清除芯片表面多余的遮光剂残余膜,且清除残余膜后,芯片后续封装烘烤不会发泡。
本发明的第二目的是提供上述消膜剂的制备方法,该制备方法简单,并且能够提高消膜剂的性能。
本发明的第三目的是提供上述消膜剂的应用,使用上述消膜剂能够制备单面发光LED芯片。
为实现本发明的第一目的,本发明提供了一种消膜剂,其包括以下质量份的组分:
稀释剂:50质量份至70质量份;
工业酒精:30质量份至40质量份;
丙酮:10至30质量份;
其中稀释剂包括醋酸甲酯和工业酒精。
由上可见,本发明提供了一种消膜剂,该消膜剂用于制备单面发光LED芯片的封装件时,能够有效清除芯片表面多余的遮光剂残余膜,且清除残余膜后,后续涂覆荧光胶烘烤不会发泡,加强芯片与荧光膜的粘结度。具体地,稀释剂用量可以在50质量份至70质量份范围内,高于该用量会导致无法清除残膜,低于该用量会导致后续烘烤发泡;工业酒精用量可以在30质量份至40质量份的范围内,高于该用量会导致无法清除残膜,低于该用量会导致后续烘烤发泡;丙酮用量可以在20质量份至30质量份范围内,高于该用量会导致容易清除芯片侧面的遮光胶,低于该用量会导致无法清除芯片表面残膜。
进一步的技术方案是,稀释剂包括60wt%至90wt%的醋酸甲酯以及10wt%至40wt%的工业酒精。
由上可见,本发明进一步限定了稀释剂中醋酸甲酯和工业酒精的含量,采用上述质量百分比的醋酸甲酯和工业酒精组成的稀释剂,能够在消膜剂更好地起到稀释作用,从而提高除膜效果。
进一步的技术方案是,工业酒精浓度在90wt%以上,优选98wt%。
由上可见,本发明进一步限定了工业酒精的浓度,工业酒精浓度在上述范围时,能够提高除膜效果,避免消膜剂被水等杂质稀释。
进一步的技术方案是,消膜剂包括以下质量份的组分:
稀释剂:60质量份;
工业酒精:30质量份;
丙酮:10质量份。
由上可见,本发明进一步限定了消膜剂的优选配方,该配方具有较好的除膜效果,拭擦除膜时间可以达到60s。
为实现本发明的第二目的,本发明提供了一种消膜剂的制备方法,其包括以下步骤:
步骤A:根据上述消膜剂准备各组分原料并添加各组分原料;
步骤B:将各组分原料混合分散均匀;
步骤C:储存待用。
由上可见,本发明还提供了上述消膜剂的制备方法,该制备方法简单,通过原料的分散,进一步提高了消膜剂的均匀性。
进一步的技术方案是,在步骤A中,按照丙酮、工业酒精、稀释剂的顺序依次添加各组分原料;在步骤B中,使用玻璃棒顺时针或逆时针搅拌3至5分钟;在步骤C中,将步骤B所得的混合液放置到阴凉处储存待用。
由上可见,本发明各组分按一定顺序添加能够使得各组分更好地分散,避免溶剂过早挥发,按一定方向搅拌有利于分散并减少混合液中的气泡,搅拌均匀后阴凉处放置可以减少挥发。
为实现本发明的第三目的,本发明提供了一种消膜剂的应用,将上述消膜剂用于处理沾有遮光胶的LED芯片的发光面。
由上可见,本发明提供了消膜剂在制备单面发光LED芯片封装件中的应用,本发明的消膜剂能够有效除去LED芯片发光面上的遮光胶,且清除残余膜后,后续涂覆荧光胶烘烤不会发泡。遮光胶的一个例子是硅胶型的遮光胶。
进一步的技术方案是,遮光胶包括以下质量份的组分:
硅胶:90质量份至110质量份;
二氧化硅粉末:1质量份至5质量份;
氧化铝粉末:1质量份至5质量份;
二氧化钛粉末:50质量份至80质量份。
更进一步的技术方案是,硅胶由A胶和B胶组成,A胶包含乙烯基封端甲基苯基聚硅氧烷和铂二乙烯基四甲基二硅氧烷溶液,B胶包含苯基硅树脂、苯基含氢聚硅氧烷和乙炔基环己醇。
由上可见,本发明举例说明了能够使用本发明的消膜剂进行除膜的遮光胶的具体组成。上述遮光胶具有良好的遮光效果。
进一步的技术方案是,将消膜剂沾在无纺布上,使用无纺布拭擦发光面。
由上可见,本发明可以使用无纺布拭擦的方式除去遮光胶残余膜,避免刮花芯片表面。
进一步的技术方案是,消膜剂的应用包括以下步骤:
步骤1:提供载体,以及排布在载体上的LED芯片的矩阵阵列,相邻的LED芯片之间具有空隙;
步骤2:在矩阵阵列上涂覆遮光胶,遮光胶填充空隙;固化遮光胶;
步骤3:使用消膜剂除去LED芯片上表面的遮光胶;
步骤4:在矩阵阵列上涂覆荧光胶,固化荧光胶后切割矩阵阵列,得到LED芯片封装件。
由上可见,本发明的消膜剂能够在LED芯片阵列的LED芯片上表面消除遮光胶,适用于批量化生产封装的LED芯片,尤其适用于倒装LED芯片的封装。本发明的消膜剂能够有效清除遮光剂残余膜,且清除残余膜后,后续涂覆荧光胶烘烤不会发泡,加强芯片与荧光膜的粘结度。
附图说明
图1是本发明的消膜剂制备倒装LED芯片CSP实施例的示意图。
具体实施方式
在本发明的实施例中使用的消膜剂包括以下组分:稀释剂50质量份至70质量份,工业酒精30质量份至40质量份,丙酮20质量份至30质量份。采用该消膜剂能够有效清除芯片表面多余的残膜,且清除残膜后,后续烘烤不会发泡,加强了芯片与荧光膜的粘结度。
消膜剂的制备步骤包括:按照丙酮、工业酒精、稀释剂的先后顺序依次添加物料,通过玻璃棒顺时针搅拌5分钟,放到阴凉处储存待用。采用上述制备方法制得的不同组分用量的消膜剂的实施例和对比例及其性能参数如下表3所示。表3的实施例和对比例中稀释剂由80wt%的醋酸甲酯和20wt%的工业酒精组成。遮光胶由以下组分组成:硅胶在100质量份,二氧化硅粉末1.5质量份,氧化铝粉末3质量份,二氧化钛粉末60质量份。硅胶由质量比1:5的A胶和B胶组成,相对于硅胶质量百分数为100wt%,A胶由16.63wt%的乙烯基封端甲基苯基聚硅氧烷和0.04wt%的铂二乙烯基四甲基二硅氧烷溶液组成,B胶由63.5wt%的苯基硅树脂、19.77wt%的苯基含氢聚硅氧烷和0.06wt%的乙炔基环己醇组成。
表3消膜剂实施例及对比例组分及性能
由上可见,在本发明限定的消膜剂组分用量范围内,实施例1至3能够有效清除芯片表面残余膜,且烘烤不会发泡,其中实施例1除膜时间更短,清除效果更佳。而对比例1中稀释剂用量过高,难以清除残余膜,且后续烘烤发泡严重。对比例2不使用稀释剂,无法清除残膜。
将上述实施例的消膜剂用于制备倒装LED芯片CSP,包括以下步骤:
步骤a:如图1(a)所示,在载板10上贴第一热解膜11,在第一热解膜11上贴第一双面膜12。其中,载板10为钢板,载板10上可以设有倒装LED芯片20的矩阵定位标记;第一热解膜11具有粘结性,在加热后粘结性消失,易于剥离;第一双面膜12可以是硅胶双面膜,其双面具有粘性。载板10、第一热解膜11和第一双面膜12共同构成倒装LED芯片20的载体,载板10、第一热解膜11和第一双面膜12可以通过具有压膜辊的冷裱机进行贴合。
步骤b:如图1(b)所示,在第一双面膜12上排布倒装LED芯片20的矩阵阵列,具体地,由于第一热解膜11和第一双面膜12具有一定的透明度,可以在第一双面膜12上方确定载板10上的矩阵定位标记,例如可以通过视觉检测仪器进行定位,再根据矩阵定位标记在第一双面膜12上排布倒装LED芯片20的矩阵阵列,排布可以通过排片机等装置进行。相邻的倒装LED芯片20之间具有空隙21。第一双面膜12包括涂胶区域以及在涂胶区域之外的第一空余区域,矩阵阵列设置在涂胶区域内。在本实施例中,第一空余区域设置在涂胶区域的四周。
步骤c:在矩阵阵列上涂覆遮光胶30。遮光胶30的涂覆过程可以将带有倒装LED芯片20的载体用夹具固定,采用涂胶机进行覆膜。其中,遮光胶包括以下组分:硅胶在90质量份至110质量份,二氧化硅粉末1质量份至5质量份,氧化铝粉末1质量份至5质量份,二氧化钛粉末50质量份至80质量份。其中,硅胶由质量比1:5的A胶和B胶组成,相对于硅胶质量百分数为100wt%,A胶由16.63wt%的乙烯基封端甲基苯基聚硅氧烷和0.04wt%的铂二乙烯基四甲基二硅氧烷溶液组成,B胶由63.5wt%的苯基硅树脂、19.77wt%的苯基含氢聚硅氧烷和0.06wt%的乙炔基环己醇组成。采用上述组分时能够有效填充空隙,起到遮光作用,不影响胶水的粘合度,加强散热效果并且防止粉状物料的过快沉淀。且该遮光胶固化后具有较高的强度和柔韧性,能够提高切割效率,减少切割损坏。
步骤d:如图1(c)所示,将第一压件压在遮光胶30上,使得遮光胶30填充空隙21,遮光胶30不超出涂胶区域。其中,第一压件包括第一压板40和保护膜41,保护膜41与遮光胶30接触,第一压板40设置在保护膜41上,第一压板40平行于载板10。保护膜41可以保持遮光胶30固化表面的光滑洁净,第一压板40可以是玻璃板,用来提供一定的压力。将第一压板40下压,使保护膜41靠近倒装LED芯片20的上表面,减少倒装LED芯片20上表面的残留遮光胶30。
步骤e:固化遮光胶30。固化条件可以是在75℃至90℃下固化45min至80min,然后在115℃至125℃下固化15min至45min。具体在本实施例中,固化过程可以在烘箱内进行,80℃下烘烤1h,120℃下烘烤0.5h。
步骤f:如图1(d)所示,剥离第一压件,除去倒装LED芯片20上表面的遮光胶30。具体地,可以使用消膜剂除去倒装LED芯片20上表面的遮光胶30,将消膜剂沾在无纺布上,手动使用镊子夹紧无纺布拭擦倒装LED芯片20上表面。
步骤g:在矩阵阵列上涂覆荧光胶50。荧光胶50的涂覆过程可以将带有倒装LED芯片20的载体用夹具固定,采用涂胶机进行覆膜。荧光胶50包括以下组分:硅胶在90质量份至110质量份,荧光粉40质量份至60质量份,二氧化硅粉末1质量份至5质量份,DP胶1质量份至3质量份。采用上述组分能够提高荧光胶的光效,加强粘结力,更好控制荧光膜的厚薄度,并且提高后续的切割效率。
步骤h:如图1(e)所示,在第一空余区域放置支撑块60,支撑块60的高度大于倒装LED芯片20的高度。在本实施例中,支撑块60的数目为4个,每一个支撑块60的高度相同,4个支撑块分别设置在涂胶区域四周的第一空余区域上。
步骤i:如图1(e)所示,将第二压件放置在支撑块60上,第二压件在矩阵阵列上方压平荧光胶50。第二压件包括第二压板70、第二热解膜71、第二双面膜72和高温膜73,第二热解膜71贴在第二压板70上,第二双面膜72贴在第二热解膜71上,第二双面膜72包括贴合区域以及在贴合区域之外的第二空余区域,贴合区域与涂胶区域对应设置,第二空余区域与第一空余区域对应设置,高温膜73贴在贴合区域上。第二压件以第二压板70朝上、高温膜73朝下的方式放置在支撑块60上,高温膜73与荧光胶50接触,第二双面膜72与支撑块60接触。其中,第二热解膜71具有粘结性,在加热后粘结性消失,易于剥离;第二双面膜72可以是硅胶双面膜,其双面具有粘性;高温膜73没有粘性,表面光滑,避免粘荧光层或导致荧光层表面粗糙。第二压板70、第二热解膜71、第二双面膜72和高温膜73可以通过具有压膜辊的冷裱机进行贴合。支撑块60支撑在第一双面膜12和第二双面膜72之间,第一双面膜12和第二双面膜72对支撑块60有一定的粘结作用,避免固化等过程中第二压件相对于载体位移而导致封装厚度变化。本发明可以根据CSP封装件的厚度要求,选择合适的支撑块60的高度以及高温膜73的厚度,CSP封装件的厚度等于支撑块60的高度减去高温膜73的厚度。具体在本实施例中,支撑块60的高度为0.55mm,高温膜的厚度为0.15mm,可以得到厚度为0.4mm的封装芯片。
步骤j:固化荧光胶50;固化条件为:在75℃至90℃下固化45min至80min,在115℃至125℃下固化15min至45min;具体在本实施例中,固化可以在烘箱中进行,固化条件为80℃烘烤1h,120℃烘烤0.5h。
步骤k:剥离第二压件,剥离载板10,切割矩阵阵列,得到倒装LED芯片20的CSP封装件。第一热解膜11或第一双面膜12上可以设有切割标记,根据切割标记切割矩阵阵列。
以上仅为本发明消膜剂应用的优选实施例,本发明的消膜剂可以应用于不同工艺来制造单面发光LED芯片封装件,尤其适用于利用芯片阵列批量封装LED芯片的场合。
最后需要强调的是,以上所述仅为本发明的优选实施例,并不用于限制本发明。凡在本发明的精神和原则之内,所做的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。
Claims (8)
1.一种消膜剂的应用,其特征在于包括以下步骤:
步骤1:提供载体,以及排布在所述载体上的LED芯片的矩阵阵列,相邻的所述LED芯片之间具有空隙;
步骤2:在所述矩阵阵列上涂覆遮光胶,所述遮光胶填充所述空隙;固化所述遮光胶;
步骤3:使用消膜剂除去所述LED芯片上表面的所述遮光胶;
步骤4:在所述矩阵阵列上涂覆荧光胶,固化所述荧光胶后切割所述矩阵阵列,得到LED芯片封装件;
所述消膜剂包括以下质量份的组分:
稀释剂:50质量份至70质量份;
工业酒精:30质量份至40质量份;
丙酮:10至30质量份;
其中所述稀释剂包括醋酸甲酯和工业酒精。
2.根据权利要求1所述的一种消膜剂的应用,其特在于:
所述稀释剂包括60wt%至90wt%的醋酸甲酯以及10wt%至40wt%的工业酒精。
3.根据权利要求1所述的一种消膜剂的应用,其特征在于:
所述工业酒精浓度在90wt%以上。
4.根据权利要求1所述的一种消膜剂的应用,其特征在于包括以下质量份的组分:
稀释剂:60质量份;
工业酒精:30质量份;
丙酮:10质量份;
所述工业酒精浓度为98wt%。
5.根据权利要求1至4任一项所述的一种消膜剂的应用,其特征在于:
所述消膜剂的制备方法包括以下步骤:
步骤A:准备各组分原料并添加各组分原料;
步骤B:将各组分原料混合分散均匀;
步骤C:储存待用。
6.根据权利要求5所述的一种消膜剂的应用,其特征在于:
在所述步骤A中,按照丙酮、工业酒精、稀释剂的顺序依次添加各组分原料;
在所述步骤B中,使用玻璃棒顺时针或逆时针搅拌3至5分钟;
在所述步骤C中,将所述步骤B所得的混合液放置到阴凉处储存待用。
7.根据权利要求1至4任一项所述的一种消膜剂的应用,其特征在于:
所述遮光胶包括以下质量份的组分:
硅胶:90质量份至110质量份;
二氧化硅粉末:1质量份至5质量份;
氧化铝粉末:1质量份至5质量份;
二氧化钛粉末:50质量份至80质量份;
所述硅胶由A胶和B胶组成,所述A胶包含乙烯基封端甲基苯基聚硅氧烷和铂二乙烯基四甲基二硅氧烷溶液,所述B胶包含苯基硅树脂、苯基含氢聚硅氧烷和乙炔基环己醇。
8.根据权利要求1至4任一项所述的一种消膜剂的应用,其特征在于:
步骤3包括:将所述消膜剂沾在无纺布上,使用所述无纺布拭擦所述LED芯片上表面。
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