CN110867396A - Method for protecting wafer - Google Patents
Method for protecting wafer Download PDFInfo
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- CN110867396A CN110867396A CN201910710463.XA CN201910710463A CN110867396A CN 110867396 A CN110867396 A CN 110867396A CN 201910710463 A CN201910710463 A CN 201910710463A CN 110867396 A CN110867396 A CN 110867396A
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- sheet
- wafer
- protective member
- adhesive force
- temperature
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 230000001681 protective effect Effects 0.000 claims abstract description 105
- 239000000853 adhesive Substances 0.000 claims abstract description 83
- 230000001070 adhesive effect Effects 0.000 claims abstract description 83
- 238000010438 heat treatment Methods 0.000 claims abstract description 43
- 238000003825 pressing Methods 0.000 claims abstract description 19
- 238000005728 strengthening Methods 0.000 claims abstract description 15
- 239000000463 material Substances 0.000 claims abstract description 13
- 229920000728 polyester Polymers 0.000 claims abstract description 9
- 229920000098 polyolefin Polymers 0.000 claims abstract description 9
- 238000002360 preparation method Methods 0.000 claims abstract description 9
- 230000000593 degrading effect Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 133
- 238000005520 cutting process Methods 0.000 description 33
- -1 polyethylene Polymers 0.000 description 17
- 230000002708 enhancing effect Effects 0.000 description 16
- 230000008569 process Effects 0.000 description 16
- 239000002390 adhesive tape Substances 0.000 description 13
- 239000004698 Polyethylene Substances 0.000 description 11
- 238000002844 melting Methods 0.000 description 11
- 230000008018 melting Effects 0.000 description 11
- 229920000573 polyethylene Polymers 0.000 description 11
- 239000007921 spray Substances 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 5
- 230000007246 mechanism Effects 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000007664 blowing Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 239000004743 Polypropylene Substances 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 229920006311 Urethane elastomer Polymers 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000037303 wrinkles Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/79—Apparatus for Tape Automated Bonding [TAB]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Dicing (AREA)
- Formation Of Insulating Films (AREA)
Abstract
A method for protecting a wafer is provided, without degrading the quality of a device. According to the present invention, there is provided a method for protecting a wafer, which protects the wafer (10) by providing a sheet-like protective member (22a) on a surface of the wafer (10), wherein the method for protecting the wafer comprises at least the steps of: a sheet preparation step for preparing a polyolefin-based sheet or a polyester-based sheet as a base material of the protective member (22 a); an adhesive force generation step of heating the surface of the sheet (20) to generate an adhesive force; a sheet pressure bonding step of applying a surface of the sheet (20) having generated the adhesive force to a surface (front surface (10a)) of the wafer (10) to be protected and applying a pressing force to press the sheet (20) against the surface (10a) of the wafer (10); and an adhesion strength strengthening step of heating the sheet (20) pressed against the surface of the wafer (10) to strengthen the adhesion.
Description
Technical Field
The present invention relates to a method for protecting a wafer, in which a sheet-like protective member is disposed on a surface of a wafer to protect the wafer.
Background
A wafer, in which a plurality of devices such as ICs and LSIs are formed on the front surface thereof while being divided by planned dividing lines, is divided into individual devices by a dicing apparatus after the back surface thereof is ground by a grinding apparatus to a predetermined thickness, and is used for electronic devices such as mobile phones and personal computers.
The grinding device at least comprises: a chuck table having a holding surface for holding a wafer; a grinding unit having a grinding wheel for rotatably grinding an upper surface of the wafer held by the chuck table; and a feeding unit that performs grinding and feeding of the grinding wheel, and the grinding apparatus can process the wafer to a desired thickness (for example, see patent document 1).
In addition, a protective tape having an adhesive paste is pasted on the front surface of the wafer so that a plurality of devices formed on the front surface of the wafer are not scratched by the contact between the holding surface of the chuck table and the front surface of the wafer.
Patent document 1: japanese patent laid-open No. 2005-246491
After the grinding process, the protective tape joined to the front surface of the wafer as the protective member is peeled from the front surface of the wafer, but there are problems as follows: when the protective tape is peeled from the wafer, a part of the adhesive paste of the protective tape adheres to the front surface of the wafer and remains, which deteriorates the quality of the device.
When a wafer is processed by a processing apparatus such as a laser processing apparatus or a dicing apparatus, the wafer is accommodated in an annular frame having an opening for accommodating the wafer, the back surface of the wafer is bonded to the frame by an adhesive tape, the wafer is supported by the frame via the adhesive tape, and the wafer is held by the respective processing apparatuses and processed. After dividing the wafer supported by the frame via the adhesive tape into individual device chips, there is still a problem that when the device chips are picked up from the adhesive tape: a part of the paste of the adhesive tape adheres to the back surface of the device chip and remains, which degrades the quality of the device chip.
Disclosure of Invention
The present invention has been made in view of the above circumstances, and a main technical object thereof is to provide a method for protecting a wafer without degrading the quality of a device.
In order to solve the above-described main technical problem, according to the present invention, there is provided a method for protecting a wafer by disposing a sheet-like protective member on a surface of the wafer, the method comprising at least the steps of: a sheet preparation step of preparing a polyolefin-based sheet or a polyester-based sheet as a base material of a protective member; an adhesive force generation step of heating the surface of the sheet to generate an adhesive force; a wafer pressure bonding step of applying a surface of the wafer to be protected with a sheet having an adhesive force generated thereon and applying a pressing force to press the sheet against the surface of the wafer; and an adhesion strength strengthening step of heating the sheet pressed against the surface of the wafer to strengthen the adhesion.
Preferably, in the adhesive force generating step, hot air is blown onto the surface of the sheet by jetting from the first heating means, and the sheet is heated to a temperature at which the sheet itself is not melted and adhesive force is applied, thereby generating adhesive force. In the adhesion strength strengthening step, the hot air is blown from the second heating means onto the surface of the sheet, and the sheet is heated to a temperature at which the sheet itself is not melted and adhesion is imparted, thereby strengthening the adhesion strength. In addition, it is preferable that the target temperature of the sheet when the sheet is heated in the adhesion strength enhancing step is set to be equal to or higher than the target temperature of the sheet when the sheet is heated in the adhesion strength generating step.
The method for protecting a wafer according to the present invention includes at least the steps of: a sheet preparation step of preparing a polyolefin-based sheet or a polyester-based sheet as a base material of a protective member; an adhesive force generation step of heating the surface of the sheet to generate an adhesive force; a wafer pressure bonding step of applying a surface of the wafer to be protected with a sheet having an adhesive force generated thereon and applying a pressing force to press the sheet against the surface of the wafer; and an adhesive strength strengthening step of heating the sheet pressed against the surface of the sheet to strengthen the adhesive strength, so that the protective member can be reliably adhered to the wafer, and even if the protective member is peeled off from the wafer, a part of the adhesive paste is not adhered to the front surface of the wafer, thereby solving the problem of reducing the quality of the device. Further, according to the method for protecting a wafer, in the case where the protective member is used as an adhesive tape when the wafer is divided into the respective device chips, even if the device chips are picked up from the adhesive tape after the wafer is divided into the respective device chips, a part of the adhesive paste is not attached to the back surfaces of the device chips, and the problem of deterioration in the quality of the device chips is solved.
Drawings
Fig. 1 is an overall perspective view of a sheet as a base material of a protective member.
Fig. 2 is a perspective view showing a mode of performing an adhesion force generation process on the sheet shown in fig. 1.
Fig. 3 is a perspective view showing a process of preparing a wafer to which a protective member is to be applied.
Fig. 4 is a perspective view showing a state prepared for performing the sheet pressure bonding step.
Fig. 5 is a perspective view showing an embodiment of the sheet pressure bonding step.
Fig. 6 is a perspective view showing an embodiment of a sheet cutting process performed after the sheet pressure bonding process shown in fig. 5.
Fig. 7 is a perspective view showing a mode of performing the adhesion enhancing step.
Fig. 8 is a perspective view showing a state in which a wafer to which a protective member is attached is placed on a chuck table of a grinding apparatus.
Fig. 9 is a perspective view showing an embodiment of a back grinding process for grinding the back surface of the wafer shown in fig. 8.
Fig. 10 is a view showing another embodiment of the present invention, in which (a) is a perspective view showing another embodiment of the sheet pressure bonding step, and (b) is a perspective view showing another embodiment of the sheet cutting step.
Fig. 11 (a) is a perspective view showing another embodiment in which an adhesion enhancing step is performed on a sheet in which the sheet pressure bonding step is performed according to the other embodiment shown in fig. 10, and fig. 11 (b) is a perspective view showing a state in which the wafer in which the adhesion enhancing step is performed shown in fig. 11 (a) is supported by a frame via an adhesive sheet.
Fig. 12 is a perspective view showing a mode of performing dicing processing for dividing a wafer supported by a frame via an adhesive sheet into individual device chips.
Description of the reference symbols
10: a wafer; 12: a device; 14: dividing the predetermined line; 20: slicing; 20A: rolling the sheets; 22: a protective component area; 22 a: a protective member; 24: a protective member; 30A: a first heating unit; 30B: a second heating unit; 32A: a first heater main body portion; 32B: a second heater main body portion; 34A: a first injection part; 34B: a second ejection portion; 40: a holding table; 52: a roller cutter; 60: a grinding device; 62: a chuck table; 70: a grinding unit; 80: a holding table; 90: a cutting device; f: a frame.
Detailed Description
Hereinafter, an embodiment of a method for protecting a wafer according to the present invention will be described in detail with reference to the accompanying drawings.
In the method for protecting a wafer according to the present embodiment, a sheet preparation step is first performed to prepare a sheet as a base material of the protective member used in the present embodiment.
Fig. 1 shows a perspective view of a sheet 20 as a base material of the protective member. The sheet 20 is set to have a width dimension larger than the diameter of the wafer to be protected. The sheet 20 may be selected from a polyolefin-based sheet or a polyester-based sheet, and in the present embodiment, a polyethylene sheet is selected from a polyolefin-based sheet. Fig. 1 shows the following states: from a sheet roll 20A in which the sheet 20 is wound around a core a1 without generating adhesiveness, a part of the sheet 20 is pulled out in the direction indicated by the arrow X, and the leading end of the sheet 20 is wound around a core a 2. Both the core a1 and the core a2 of the sheet roll 20A are rotatably supported by a support member (not shown) of a protective member generating device (not shown), and a rotation driving means (not shown) is disposed on the winding-side core a2, so that the sheet 20 can be wound by an opening and closing operation (not shown) by an operator. The sheet 20 has a front surface 20a and a back surface 20b, and the front surface 20a is provided with fine irregularities, that is, so-called embossing, while the back surface 20b side is a flat surface.
When the sheet 20 serving as a base material of the protective member is prepared as described above, the adhesive force generation step is performed to generate the adhesive force of the sheet 20 to bring the sheet into a state of functioning as the protective member. The adhesion force generation step will be described in more detail below with reference to fig. 2.
As shown in fig. 2, in the adhesion force generation step, the first heating unit 30A is positioned below the back surface 20b of the sheet 20 drawn out by a predetermined length from the sheet roll 20A. The first heating unit 30A has a first heater main body portion 32A and a first ejection portion 34A. The first heater main body portion 32A incorporates a heater, a temperature sensor, an air blowing mechanism, and the like, which are not shown. The first jetting part 34A is formed in a cylindrical shape so as to jet the hot air sent from the first heater main body part 32A, and the hot air W1 generated in the first heater main body part 32A is jetted upward from the jetting port 34A of the first jetting part 34A. The first heating unit 30A is connected to a power supply and a control device (not shown), and by having the temperature sensor, the hot air W1 ejected from the ejection port 34a is adjusted to a desired temperature (300 ℃ in the present embodiment).
When the first heating unit 30A is operated to jet the hot air W1 toward the lower surface 20b of the sheet 20, the hot air W1 is cooled at a distance from the jet port 34a to the sheet 20, and the predetermined protective member region 22 of the sheet 20 is heated to 90 to 110 ℃. The temperature of 90 to 110 ℃ is a temperature at which the polyethylene sheet selected as the sheet 20 does not melt (fluidize) at a temperature lower than the melting temperature (120 to 140 ℃) and at which the sheet 20 generates adhesive strength (adhesive strength generation temperature). The temperature of the hot air W1 ejected from the first heating means 30A is appropriately adjusted so that the temperature of the sheet 20 becomes the above-described adhesive force generation temperature, depending on the air temperature at the work site where the adhesive force generation step is performed, the distance from the ejection opening 34a to the back surface 20b of the sheet 20, and the like.
The protective member region 22 heated to the adhesive force generation temperature in the sheet 20 is set to be at least a region larger than the wafer to be protected, but the entire sheet 20 pulled out from the sheet roll 20A and exposed may be heated as the protective member region 22. When the area in which the hot air W1 can be ejected from the first ejection portion 34A is narrow, the entire desired protective member region 22 can be heated by appropriately moving either the sheet 20 or the first heating unit 30A in the horizontal direction. In fig. 2 and 4 to 6, for convenience of explanation, the protective member region 22 where the adhesive force is generated is highlighted so as to be distinguishable from the region where the adhesive force is not generated, but actually, the protective member region 22 where the adhesive force is generated and the other region where the adhesive force is not generated are not distinguished to a degree that the visibility is not clear. As a result, the adhesive force generation step is completed, and the sheet 20 is provided with adhesive force, so that the protective member region 22 functions as a protective member.
As described above, when the surface of the sheet 20 is heated to generate the adhesive force in the sheet 20, the sheet pressure bonding step is performed to apply the surface of the sheet 20 (the protective member region 22) on which the adhesive force is generated to the surface of the wafer to be protected, and the sheet is pressure bonded to the surface of the wafer by applying a pressing force. The sheet crimping step will be described in more detail below with reference to fig. 3 to 5.
In the sheet pressing step, as shown in fig. 3, a wafer 10 is prepared, and a protective member is attached to the wafer 10 in preparation for grinding. The wafer 10 is composed of a semiconductor substrate, and a plurality of devices 12 are formed on the front surface 10a, which is partitioned by the lines to divide 14. In the present embodiment, since the front surface 10a of the wafer 10 is to be protected, the wafer 10 is placed on the suction chuck 42 with the back surface 10b facing downward, and the suction chuck 42 is formed on the holding table 40 for performing the sheet pressure bonding step and has air permeability. A suction unit (not shown) is connected to the holding table 40, and the wafer 10 is sucked and held on the holding table 40 by operating the suction unit (wafer preparation step). The wafer preparation step may be completed before the sheet pressure bonding step, and may be performed at any time before or after the adhesive force forming step.
When the wafer 10 is held on the holding table 40, the holding table 40 prepared in the wafer preparation step is positioned below the protective member region 22, as shown in fig. 4, instead of the first heating unit 30A positioned below the protective member region 22. When the holding table 40 is positioned below the protective member region 22, the height of the sheet 20 or the holding table 40 is adjusted so that the wafer 10 held by the holding table 40 comes into contact with the lower surface of the protective member region 22.
When the wafer 10 is positioned on the lower surface of the protective member region 22, the pressing roller 50 shown in fig. 5 is positioned above the protective member region 22. The pressing roller 50 is made of hard urethane rubber having elasticity or the like. When the pressing roller 50 is positioned above the protective member region 22, the pressing roller 50 is lowered in the direction indicated by the arrow Z and pressed against the protective member region 22, and the pressing roller 50 is moved from the front end portion in the direction indicated by the arrow D while rotating in the direction indicated by the arrow R1, whereby the protective member region 22 is pressed against the entire front surface 10a of the wafer 10 and pressure bonding is performed, thereby completing the sheet pressure bonding step. In addition, as described above, the protective member region 22 of the sheet 20 is heated in advance to generate the adhesive force, and the adhesive force is maintained even if the temperature is lowered, so that the protective member region 22 is attached to the front surface 10a of the wafer 10. Further, since the front surface 20a of the sheet 20 has minute irregularities, the sheet 20 can be prevented from being stuck to the pressure roller 50 even if the protective member region 22 is provided with adhesive force by performing the adhesive force generation step described above.
When the above-described wafer pressure bonding step is completed, a wafer cutting step is performed to cut the wafer 20 in accordance with the shape of the wafer 10 in consideration of grinding processing described later. The sheet cutting step is explained below with reference to fig. 6.
In the sheet cutting step, as shown in fig. 6, a disk-shaped roll cutter 52 is positioned above the protective member region 22 (above the outer peripheral edge of the wafer 10) in place of the pressing roll 50 used in the sheet pressure bonding step. When the roller cutter 52 is positioned at the outer peripheral edge of the wafer 10, the roller cutter 52 is then moved along the outer peripheral edge of the wafer 10 while rotating in the direction of the arrow R2, thereby cutting the sheet 20 into a circular shape. Thus, the sheet cutting process is completed.
When the above-described wafer cutting process is completed, the holding table 40 is lowered or the entire wafer 20 is raised to separate the wafer 10 from the wafer 20. As a result, the protective member 22a cut along the outer peripheral edge of the wafer 10 in the protective member region 22 is bonded to the wafer 10. After the protective member 22a is cut out and separated from the sheet 20, the winding-side core a2 is rotated to wind the region where the protective member 22a is cut out, whereby the region where the adhesive force generation step has not been performed can be pulled out from the sheet roll 20A, and the adhesive force generation step can be performed again. By appropriately repeating the above-described adhesive force generating step, sheet pressure bonding step, and sheet cutting step, the protective member 22a can be arranged on the plurality of wafers 10.
In the above-described embodiment, the description has been given of the case where the protective member 22a is disposed on the plurality of wafers 10 by appropriately repeating the adhesive force generating step, the sheet pressure bonding step, and the sheet cutting step. However, the present invention is not limited to this, and for example, the adhesive force generation step described with reference to fig. 2 may be continuously performed from the start end to the end of the sheet 20 while the sheet 20 wound around the sheet roll 20A is pulled out and wound around the core a 2. The adhesive force applied by heating the sheet 20 is maintained even if the temperature is lowered, but since the concave-convex processing (embossing processing) is performed on the upper surface 20a of the sheet 20, the portion where the sheets 20 are overlapped is not fixed after the sheet 20 is wound by applying the adhesive force. By thus providing the adhesive force to the entire sheet 20 in advance, the sheet pressing step and the sheet cutting step of pressing the protective member 22a can be continuously performed on the wafer 10 without adding the adhesive force generating step.
As described above, since the temperature at which the adhesive force is generated in the adhesive force generation step is set to a value lower than the melting temperature, the adhesive force is generated and the sheet 20 is pressure-bonded in a state where it is not melted and is not excessively softened. Therefore, in the sheet pressing step, workability in pressing the sheet 20 against the wafer 10 is excellent, workability is good, and even if wrinkles or the like occur in the sheet 20 in the sheet pressing step, peeling and work can be easily performed again. On the other hand, from the viewpoint of reliably attaching and integrating the protective member 22a cut out from the sheet 20 to the wafer 10, there is room for further improvement in integration even after the above-described adhesive force generation step and sheet pressure bonding step. Therefore, in the present embodiment, an adhesion strength reinforcing step is also performed. The adhesion enhancing step will be specifically described below with reference to fig. 7.
In the adhesion enhancing step, first, as shown in fig. 7, the second heating unit 30B is positioned above the wafer 10 held by the holding table 40. The second heating unit 30B has a second heater main body portion 32B and a second ejection portion 34B. The second heater main body portion 32B incorporates a heater, a temperature sensor, an air blowing mechanism, and the like, which are not shown. The second jetting portion 34B is formed in a cylindrical shape so as to jet the hot air sent from the second heater main body portion 32B, and the hot air W2 generated in the second heater main body portion 32B is jetted downward from the second jetting portion 34B. The second heating unit 30B is connected to a power supply and a control device (not shown), and the hot air W2 ejected from the second ejection portion 34B is adjusted to a desired temperature (for example, 300 ℃) by using the temperature sensor.
When the second heating unit 30B is operated to spray hot air W2 toward the protective member 22a formed from the sheet 20, the hot air W2 is cooled by a distance from the second spray portion 34B to the protective member 22a, and the protective member 22a is heated to 100 to 120 ℃. The temperature of 100 to 120 ℃ is a temperature at which the polyethylene sheet selected as the sheet 20 does not melt (fluidize) at a temperature lower than the melting temperature (120 to 140 ℃) and at which the adhesive strength of the protective member 22a, that is, the adhesive strength is enhanced (adhesive strength enhancing temperature). The temperature of the hot air W2 ejected from the second heating means 30B is appropriately adjusted so that the temperature of the protective member 22a becomes the adhesion enhancing temperature described above, depending on the air temperature at the work site where the adhesion enhancing step is performed, the distance from the ejection port of the second ejection portion 34B to the protective member 22a, and the like, and it is preferable that the target temperature when the protective member 22a is heated is set to the same temperature as or higher than the temperature when the sheet 20 is heated in the adhesion generating step. By performing the adhesion strengthening step in this way, the protective member 22a is softened, and the protective member 22a is fused with the irregularities of the front surface 10a of the wafer 10 to improve the degree of integration, thereby preventing occurrence of unexpected peeling or the like during the back grinding process described later. As described above, the adhesion enhancing process is completed.
By performing the adhesion enhancing step, the protective member 22a can be reliably attached to the front surface 10a of the wafer 10, and the back surface grinding process for grinding the back surface 10b of the wafer 10 can be performed. The back grinding process will be described below with reference to fig. 8 and 9.
As shown in fig. 8, when the wafer 10 is subjected to the back grinding step, the wafer 10 to which the protective member 22a is pressure bonded and whose adhesion has been strengthened is placed on a chuck table 62 of a grinding device 60 (only a part of which is shown) with the protective member 22a side facing downward and the back surface 10b being exposed upward. An air-permeable suction chuck 62a is formed on the upper surface of the chuck table 62 and connected to a suction unit not shown. The suction unit is operated to suck and hold the wafer 10 placed on the chuck table 62 through the protective member 22 a.
As shown in fig. 9, the grinding apparatus 60 includes a grinding unit 70 for grinding and thinning the back surface 10b of the wafer 10 sucked and held on the chuck table 62. The grinding unit 70 has: a rotation main shaft 72 rotated by a rotation driving mechanism not shown; a mount 74 attached to a lower end of the rotary main shaft 72; and a grinding wheel 76 attached to the lower surface of the mounting seat 74, and a plurality of grinding stones 78 are annularly arranged on the lower surface of the grinding wheel 76.
When the wafer 10 is sucked and held by the chuck table 62, the chuck table 62 is rotated in the direction indicated by the arrow R4, for example, at 300rpm, while the spindle 72 of the grinding unit 70 is rotated in the direction indicated by the arrow R3 in fig. 9, for example, at 3000 rpm. Then, the grinding water is supplied to the back surface 10b of the wafer 10 by a grinding water supply means, not shown, while the grinding whetstone 78 is brought into contact with the back surface 10b of the wafer 10, and the grinding wheel 76 is fed downward at a grinding feed rate of, for example, 1 μm/sec. In this case, the wafer 10 can be ground while measuring the thickness thereof by a contact-type measuring instrument, not shown, and when the back surface 10b of the wafer 10 is ground by a predetermined amount to have a predetermined thickness, the grinding unit 70 is stopped and the back surface grinding process of grinding the back surface 10b of the wafer 10 is completed through a cleaning and drying process or the like.
When the back grinding is completed, the protective member 22a is peeled off from the front surface 10a of the wafer 10 (protective member peeling step). When the protective member peeling step is completed, the protective member is appropriately conveyed to the next step. In the present embodiment, as described above, the protective member 22a having an adhesive force imparted thereto by heating a polyethylene sheet selected from a polyolefin-based sheet or a polyester-based sheet is pressed against the wafer 10 and then bonded thereto through the adhesive force strengthening step, whereby the protective member 22a and the front surface 10a of the wafer 10 are bonded to each other without using an adhesive paste or the like. Thus, even if the protective member 22a is peeled off from the front surface 10a of the wafer 10, a part of the adhesive paste or the like does not remain attached to the wafer, and the problem of deterioration in the quality of the device or the like is solved.
The present invention is not limited to the above-described embodiments, and various modifications can be provided. In the above embodiment, the protective member 22a that generates the adhesive force by heating the surface of the polyethylene sheet is attached as an example of the protective member 22a that protects the front surface 10a of the wafer 10 to be subjected to the back grinding process, but the present invention is not limited thereto. As another embodiment, the protective member provided by the present invention can be applied to an adhesive tape in the case where: the wafer is accommodated in an annular frame having an opening for accommodating the wafer, the back surface of the wafer is bonded to the frame with an adhesive tape, and the wafer is supported by the frame via the adhesive tape. Another embodiment will be described below with reference to fig. 10 and 11.
Fig. 10 (a) is a perspective view showing an embodiment of a sheet pressure bonding step of pressure bonding a protective member functioning as an adhesive tape to the back surface 10b of the wafer 10. The sheet 20 ' shown in fig. 10 (a) is a polyethylene sheet, and the above-described adhesive force generation step is performed in advance to give adhesive force to the entire sheet 20 ', and the sheet 20 ' is cut into a size capable of covering the entire holding table 80 in which the sheet pressure bonding step is performed, thereby forming the protective member 24. The upper surface 82 of the holding table 80 is formed as a flat surface and is set to have a size capable of mounting the entire ring frame F having an opening capable of accommodating the wafer 10.
In the wafer pressure bonding step, as shown in fig. 10 (a), a ring-shaped frame F having an opening Fa and the wafer 10 accommodated in the opening Fa with the back surface 10b facing upward are placed on the upper surface 82 of the holding table 80. Then, the protective member 24 is laid on the holding table 80 so as to cover the wafer 10 and the frame F, and the pressing roller 50' is rotated and moved in the direction indicated by the arrow D in the same manner as in the sheet press-bonding step described with reference to fig. 5, so that a pressing force is applied to the entire wafer 10 and the frame F with the protective member 24 interposed therebetween, and the protective member 24 is press-bonded to the frame F and the wafer 10. In this way, the sheet press-bonding step is completed.
When the sheet press-bonding step is completed, as shown in fig. 10 (b), the protective member 24 is cut into a circular shape along the frame F by using the roller cutter 52 (shown by line L), and the outer peripheral portion of the protective member 24a which is trimmed into a circular shape is removed (sheet cutting step).
When the sheet cutting step is performed as described above, the adhesion strength enhancing step is performed. The adhesion enhancing step will be described below with reference to fig. 11.
In the adhesion enhancing step, first, as shown in fig. 11 (a), the second heating unit 30B is positioned above the wafer 10 placed on the holding table 80 and the frame F. The second heating unit 30B is a heating unit having the same function as the second heating unit 30B explained with reference to fig. 7, and includes a second heater main body portion 32B and a second ejection portion 34B. The second heating unit 30B is also connected to a power supply and a control device (not shown), and the hot air W2 ejected from the second ejection portion 34B is adjusted to a desired temperature (for example, 300 ℃) by using the temperature sensor. The injection area when the hot air W2 is injected from the second injection portion 34B can be appropriately adjusted.
When the second heating unit 30B is operated to spray hot air W2 toward the protective member 24a attached to the wafer 10 and the frame F, the protective member 24a is heated to 100 to 120 ℃ by, for example, cooling the hot air W2 at a distance from the second spray portion 34B to the protective member 24 a. The temperature of 100 to 120 ℃ is a temperature at which the polyethylene sheet selected as the sheet 20 does not reach the melting temperature (120 to 140 ℃) and does not melt (fluidize), and is a temperature at which the adhesive strength of the protective member 24a is generated, and as a result, the adhesive strength is strengthened (adhesive strength strengthening temperature). The temperature of the hot air W2 ejected from the second heating means 30B is appropriately adjusted so that the temperature of the protective member 24a becomes the adhesion enhancing temperature described above, depending on the air temperature at the work site where the adhesion force generation step is performed, the distance from the ejection port of the second ejection portion 34B to the protective member 24a, and the like. The target temperature when heating the protective member 24a is preferably a temperature lower than the melting temperature, and is set to the same temperature as or higher than the temperature when heating the sheet 20 in the adhesive force generating process. By performing the adhesion strengthening step in this way, the protective member 24a is reliably bonded to the wafer 10 and the frame F, and unexpected peeling or the like is prevented from occurring when the dicing process described later is performed. As described above, the adhesion enhancing process is completed.
Fig. 11 (b) shows a state in which the wafer 10 supported by the frame F is turned upside down together with the frame F to expose the front surface 10a of the wafer 10 upward in the finish sheet cutting step, and it can be understood from the figure that the back surface 10b of the wafer 10 and the frame F are bonded by the protective member 24a functioning as an adhesive tape, and the wafer 10 is held by the frame F via the protective member 24 a. In this manner, when the wafer 10 is held by the frame F via the protective member 24a, it can be carried to a dicing apparatus 90 shown in fig. 12, for example, and subjected to dicing. The cutting process will be described below with reference to fig. 12.
As shown in fig. 12, the cutting device 90 has a spindle unit 91. The spindle unit 91 has a tool cover 94, and the tool cover 94 holds a cutting tool 93 fixed to the tip end of the rotary spindle 92. A cutting water supply unit 95 is disposed at a position adjacent to the cutting tool 93 on the tool cover 94, and supplies cutting water to a cutting position of the wafer 10 by the cutting tool 93. Before cutting by the cutting tool 93, alignment (registration) of the cutting tool 93 with the planned dividing lines 14 formed on the front surface 10a side of the wafer 10 is performed using an alignment unit (not shown). The alignment unit includes at least an illumination unit and an imaging unit, not shown, and is configured to be able to image and detect the line to divide 14 on the front surface 10 a.
When the alignment by the alignment means is performed, the cutting tool 93 rotating at a high speed is positioned on the line to divide 14 from the front surface 10a of the wafer 10 held by a chuck table (not shown), and the wafer 10 is moved in the X direction (the processing feed direction) indicated by the arrow X with respect to the cutting tool 93 by lowering the cutting tool 93 to cut. Thereby, the dividing grooves 100 are formed by cutting and dividing the wafer 10. The dividing groove 100 is a groove for completely dividing the wafer 10. The dividing groove 100 is formed as follows: the cutting process by the cutting tool 93 described above is performed while the chuck table 40 holding the wafer 10 is appropriately moved in the X direction, the Y direction perpendicular to the arrow X, and the rotational direction by operating a moving means, not shown, so that the dividing grooves 100 are formed along all the lines to divide 14 of the wafer 10. Thus, the cutting process is completed. According to this embodiment, the rear surface 10b of the wafer 10 is protected by the protective member 24a functioning as an adhesive tape without using an adhesive paste or the like, and the dicing process can be performed well. After the wafer 10 is divided into the device chips by dicing, even if the wafer is picked up for each device chip, a part of the adhesive paste or the like does not adhere to the back surfaces of the device chips and remains, and the problem of the quality degradation of the device chips or the like is solved.
In the above-described embodiment, the polyethylene sheet is selected as the sheet 20 or the sheet 20' serving as the base material of the protective member, but the polyethylene sheet is not limited thereto, and may be appropriately selected from a polyolefin-based sheet and a polyester-based sheet. When the polyolefin-based sheet is selected, for example, a polypropylene sheet or a polystyrene sheet may be selected in addition to the polyethylene sheet. When selecting from polyester-based sheets, the polyester-based sheets can be selected from, for example, polyethylene terephthalate sheets and polyethylene naphthalate sheets.
In the case where a sheet other than the polyethylene sheet is selected as the sheet serving as the base material of the protective member, the target temperature for heating the sheet is adjusted in the adhesion-force generating step and the adhesion-force reinforcing step according to the material of the selected sheet, because the adhesion-force generating temperature and the adhesion-force reinforcing temperature for applying adhesion force without melting the sheet itself differ depending on the material of the sheet. For example, when a polypropylene sheet having a melting temperature of 160 to 180 ℃ is selected, the sheet is heated so that the target temperature in the adhesive strength producing step is about 130 to 150 ℃ and the target temperature in the adhesive strength strengthening step is about 140 to 160 ℃. When a polystyrene sheet having a melting temperature of 220 to 240 ℃ is selected, the sheet is heated so that the target temperature in the adhesive force generation step is about 190 to 210 ℃ and the target temperature in the adhesive force strengthening step is about 200 to 220 ℃. Similarly, when a polyethylene terephthalate sheet having a melting temperature of 250 to 270 ℃ is selected, the sheet may be heated so that the target temperature in the adhesion force generation step is about 220 to 240 ℃ and the target temperature in the adhesion force reinforcement step is about 230 to 250 ℃, and when a polyethylene naphthalate sheet having a melting temperature of 160 to 180 ℃ is selected, the sheet may be heated so that the target temperature in the adhesion force generation step is about 130 to 150 ℃ and the target temperature in the adhesion force reinforcement step is about 140 to 160 ℃. As described above, since the temperature at which the sheet serving as the base material of the protective member generates an appropriate adhesive force differs depending on the product, it is preferable to experimentally determine the temperature at which the adhesive force is appropriately generated in consideration of the melting temperature of the sheet actually selected as the target temperature at the time of heating the sheet in the adhesive force generation step and the adhesive force strengthening step.
In the above-described embodiment, the first heating unit 30A, the second heating unit 30B, and the third heating unit 30C are configured to spray hot air to heat the sheet (protective member) by configuring the heaters, the temperature sensors, the air blowing mechanisms, and the like, which are not illustrated, but the present invention is not limited to the unit configured to spray hot air to heat, and may be configured to directly contact and heat the sheet (protective member) with a heat generating plate formed in a flat plate shape.
Claims (4)
1. A method for protecting a wafer by providing a sheet-like protective member on a surface of the wafer,
the method for protecting the wafer at least comprises the following steps:
a sheet preparation step of preparing a polyolefin-based sheet or a polyester-based sheet as a base material of a protective member;
an adhesive force generation step of heating the surface of the sheet to generate an adhesive force;
a sheet pressure bonding step of applying a surface of the sheet on which the adhesive force is generated to a surface of the wafer to be protected and applying a pressing force to press the sheet against the surface of the wafer; and
and an adhesion strength strengthening step of heating the sheet pressed against the surface of the wafer to strengthen the adhesion.
2. The method for protecting a wafer according to claim 1,
in the adhesive force generating step, hot air is blown from the first heating means onto the surface of the sheet, and the sheet is heated to a temperature at which the sheet itself is not melted and adhesive force is applied, thereby generating adhesive force.
3. The method for protecting a wafer according to claim 1 or 2,
in the adhesion strength strengthening step, hot air is blown from the second heating means onto the surface of the sheet, and the sheet is heated to a temperature at which the sheet itself is not melted and adhesion is imparted, thereby strengthening the adhesion strength.
4. The method for protecting a wafer according to any one of claims 1 to 3,
the target temperature of the sheet when the sheet is heated in the adhesion strength-enhancing step is set to be equal to or higher than the target temperature of the sheet when the sheet is heated in the adhesion strength-generating step.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-158913 | 2018-08-28 | ||
| JP2018158913A JP7173792B2 (en) | 2018-08-28 | 2018-08-28 | Wafer protection method |
Publications (2)
| Publication Number | Publication Date |
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| CN110867396A true CN110867396A (en) | 2020-03-06 |
| CN110867396B CN110867396B (en) | 2024-02-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910710463.XA Active CN110867396B (en) | 2018-08-28 | 2019-08-02 | Wafer protection method |
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| Country | Link |
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| JP (1) | JP7173792B2 (en) |
| KR (1) | KR20200024709A (en) |
| CN (1) | CN110867396B (en) |
| TW (1) | TWI811436B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191297A (en) * | 2003-12-25 | 2005-07-14 | Jsr Corp | Dicing film and cutting method of semiconductor wafer |
| JP2007165636A (en) * | 2005-12-14 | 2007-06-28 | Nippon Zeon Co Ltd | Method for manufacturing semiconductor element |
| JP2008166459A (en) * | 2006-12-28 | 2008-07-17 | Tateyama Machine Kk | Protective tape applying method and apparatus |
| CN108022876A (en) * | 2016-11-02 | 2018-05-11 | 株式会社迪思科 | The processing method of chip |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005246491A (en) | 2004-03-01 | 2005-09-15 | Disco Abrasive Syst Ltd | Grinding apparatus and method for grinding wafer |
| JP5895676B2 (en) * | 2012-04-09 | 2016-03-30 | 三菱電機株式会社 | Manufacturing method of semiconductor device |
| JP6276988B2 (en) * | 2013-12-27 | 2018-02-07 | 日東精機株式会社 | Adhesive tape application method and adhesive tape application device |
-
2018
- 2018-08-28 JP JP2018158913A patent/JP7173792B2/en active Active
-
2019
- 2019-07-22 KR KR1020190088278A patent/KR20200024709A/en not_active Application Discontinuation
- 2019-08-02 CN CN201910710463.XA patent/CN110867396B/en active Active
- 2019-08-23 TW TW108130335A patent/TWI811436B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005191297A (en) * | 2003-12-25 | 2005-07-14 | Jsr Corp | Dicing film and cutting method of semiconductor wafer |
| JP2007165636A (en) * | 2005-12-14 | 2007-06-28 | Nippon Zeon Co Ltd | Method for manufacturing semiconductor element |
| JP2008166459A (en) * | 2006-12-28 | 2008-07-17 | Tateyama Machine Kk | Protective tape applying method and apparatus |
| CN108022876A (en) * | 2016-11-02 | 2018-05-11 | 株式会社迪思科 | The processing method of chip |
Also Published As
| Publication number | Publication date |
|---|---|
| TW202010009A (en) | 2020-03-01 |
| JP7173792B2 (en) | 2022-11-16 |
| TWI811436B (en) | 2023-08-11 |
| JP2020035803A (en) | 2020-03-05 |
| KR20200024709A (en) | 2020-03-09 |
| CN110867396B (en) | 2024-02-20 |
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