CN116640371A - Hot-pressing joint sheet - Google Patents

Hot-pressing joint sheet Download PDF

Info

Publication number
CN116640371A
CN116640371A CN202310148667.5A CN202310148667A CN116640371A CN 116640371 A CN116640371 A CN 116640371A CN 202310148667 A CN202310148667 A CN 202310148667A CN 116640371 A CN116640371 A CN 116640371A
Authority
CN
China
Prior art keywords
wafer
resin
thermocompression bonding
heat
sheet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202310148667.5A
Other languages
Chinese (zh)
Inventor
有福法久
木村昌照
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN116640371A publication Critical patent/CN116640371A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/18—Manufacture of films or sheets
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/08—Macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/38—Pressure-sensitive adhesives [PSA]
    • C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2323/04—Homopolymers or copolymers of ethene
    • C08J2323/06—Polyethene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
    • C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
    • C08J2323/10—Homopolymers or copolymers of propene
    • C08J2323/12—Polypropene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2325/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Derivatives of such polymers
    • C08J2325/02—Homopolymers or copolymers of hydrocarbons
    • C08J2325/04—Homopolymers or copolymers of styrene
    • C08J2325/06—Polystyrene
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2327/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers
    • C08J2327/02—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment
    • C08J2327/04—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
    • C08J2327/06—Homopolymers or copolymers of vinyl chloride
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2433/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2459/00—Characterised by the use of polyacetals containing polyoxymethylene sequences only
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2467/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
    • C08J2467/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2467/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
    • C08J2467/04—Polyesters derived from hydroxy carboxylic acids, e.g. lactones
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2469/00—Characterised by the use of polycarbonates; Derivatives of polycarbonates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Lining Or Joining Of Plastics Or The Like (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

The application provides a heat-pressing joint sheet, which is a heat-pressing joint sheet of polyolefin resin and can support a wafer with sufficient rigidity. The heat-pressed sheet is formed by heating and mixing a polyolefin resin with a resin having a flexural strength of 60 to 160 MPa.

Description

Hot-pressing joint sheet
Technical Field
The present application relates to a heat-pressed sheet containing at least a polyolefin resin.
Background
After a wafer having a plurality of devices such as ICs and LSIs formed on the front surface thereof and divided by a dividing line is ground to a desired thickness by a grinding device, the wafer is divided into device chips by a dicing device and a laser processing device, and is used for electronic devices such as a mobile phone and a personal computer.
When the back surface of the wafer is ground by the grinding device, a protective tape is attached to the front surface of the wafer, so that the front surface held by the chuck table is not damaged.
In addition, when the wafer is divided into the device chips by the dicing device and the laser processing device, the wafer is supported by the frame having the opening for accommodating the wafer in the center via the dicing tape, and even if the wafer is divided into the device chips, the wafer can be transported to the next step while maintaining the form of the wafer.
The protective tape and dicing tape described above have an adhesive layer formed on the front surface thereof, and therefore have the following problems when peeled from the wafer after processing: a part of the adhesive layer is peeled off and remains on the front surface of the wafer or the device chip, and the quality of the device chip is lowered.
Accordingly, the present inventors have developed a sheet of a polyolefin resin as a thermocompression bonding sheet thermocompression bonded to a wafer, and have proposed the following: by using the thermocompression bonding sheet having no adhesive layer as the protective sheet and dicing tape, the problem of degradation of the quality of the device chip due to the peeling and remaining of a part of the adhesive layer is solved (for example, refer to patent documents 1 and 2).
Patent document 1: japanese patent application laid-open No. 2019-201016
Patent document 2: japanese patent laid-open No. 2019-186488
Further, when a wafer is supported by an annular frame having an opening for accommodating the wafer in the center thereof via the thermocompression bonding sheet, and a plurality of wafers are accommodated in a cassette having a plurality of accommodating grooves at predetermined intervals and conveyed, there is a problem in that, when the thermocompression bonding sheet of the polyolefin resin is used as the thermocompression bonding sheet, the following is caused: since the heat-pressure bonding sheet of the polyolefin resin has no rigidity, the wafer stored in the upper part of the cassette is allowed to sag to a position contacting the wafer below through the heat-pressure bonding sheet with the lapse of time, and there is a problem such as when the wafer is pulled out from the cassette together with the frame, or when the processed wafer is returned to the cassette.
In the grinding device, a protective tape formed in the same size as the wafer is stuck to the front surface of the wafer, the protective tape side is held by the holding unit, and the back surface of the wafer is ground and thinned. The wafer thinned by the grinding device is held by the protective tape, but when the above-mentioned thermally pressed tab of the polyolefin resin is used as the protective tape, there is a problem as follows: since the thermocompression bonding sheet has no rigidity, it is not possible to support the thinned wafer with sufficient rigidity, and it takes much time to carry the wafer.
Disclosure of Invention
The present application has been made in view of the above-described circumstances, and a main technical problem thereof is to provide a thermocompression bonding sheet of a polyolefin resin, which is capable of supporting a wafer with sufficient rigidity, for example, even when the wafer is supported by an annular frame having an opening for accommodating the wafer in the center thereof via the thermocompression bonding sheet of the polyolefin resin, and a plurality of wafers are accommodated in a storage container such as a cassette in the vertical direction, the accommodated wafers do not sag and do not come into contact with the wafers accommodated below.
In order to solve the above-described main technical problems, according to the present application, there is provided a heat-pressed sheet comprising a polyolefin resin and a resin having a flexural strength of 60Mpa to 160 Mpa.
The vicat softening temperature of the polyolefin resin is preferably 30 to 100 ℃. Further, as the polyolefin-based resin having a Vicat softening temperature of 30 to 100 ℃, any resin selected from polyethylene, polypropylene, polyvinyl chloride and polystyrene is preferable. Further, as the resin having the bending strength of 60Mpa to 160Mpa, any resin selected from polyethylene terephthalate, polybutylene terephthalate, acrylic resin, polycarbonate, polylactic acid and polyacetal is preferable. The polyolefin resin is preferably blended with a resin having a flexural strength of 60 to 160MPa in a volume ratio of 5 to 50%.
The heat-pressed sheet of the present application is formed by heating and mixing a resin having a flexural strength of 60Mpa to 160Mpa with a polyolefin resin, and thus can be obtained by supporting a wafer with sufficient rigidity.
Drawings
Fig. 1 is a schematic view showing a mode of manufacturing a raw material of the heat-pressed tab of the present embodiment.
Fig. 2 (a) is a schematic view showing a method of manufacturing a sheet base material using the raw material manufactured by the raw material manufacturing process shown in fig. 1, and fig. 2 (b) is a perspective view showing a method of forming a heat-pressed tab from the sheet base material.
Fig. 3 (a) to (c) are perspective views showing how the thermocompression bonding sheet shown in fig. 2 is thermocompression bonded to a wafer and a frame.
Fig. 4 is a perspective view showing a method of cutting a wafer supported by a frame.
Fig. 5 (a) to (c) are perspective views showing another mode of thermocompression bonding the thermocompression bonding pad shown in fig. 2 to a wafer.
Fig. 6 (a) and (b) are perspective views showing a method of grinding the back surface of the wafer to which the thermocompression bonding pad is attached in the manner shown in fig. 5.
Description of the reference numerals
1. 2: providing a container; 10: a raw material manufacturing device; 11: a mixing vessel; 12: a heating unit; 20: a sheet manufacturing apparatus; 21: a raw material input groove; 22: roller 1; 23: roller 2; 24: roller 3; 25: a 4 th roller; 26: a calender; 27: a winding roller; 30: a thermocompression bonding device; 32: a chuck table; 36: a heating roller; 37: a cutting unit; 38: a cutting tool; 39: a case; 40: a cutting device; 42: a cutting unit; 43: a spindle housing; 44: a cutter cover; 45: a main shaft; 46: a cutting tool; 47: a cutting water nozzle; 50: a thermocompression bonding device; 52: a chuck table; 55: a heating roller; 56: a cutting unit; 57: a cutting tool; 60: a grinding device; 61: a chuck table; 64: a grinding unit; 65: rotating the main shaft; 66: a grinding wheel mounting seat; 67: grinding the grinding wheel; 68: grinding tool; 100: cutting a groove; p: raw materials; p1: 1 st raw material; p2: raw material 2; s: a sheet substrate.
Detailed Description
Hereinafter, embodiments of the heat-pressed tab constructed according to the present application will be described in detail with reference to the accompanying drawings.
Fig. 1 is a schematic view showing steps 1 to 3 of the raw material P for manufacturing the heat-pressed tab of the present embodiment. The raw material manufacturing apparatus 10 used for manufacturing the raw material P includes: a mixing vessel 11; and a heating unit 12 for heating the mixing vessel 11 to a predetermined temperature.
The raw material P of the heat-pressed tab of the present embodiment is formed by the following procedure. More specifically, at least a 1 st raw material P1 made of a polyolefin resin and contained in a supply container 1 and a 2 nd raw material P2 made of a resin having a flexural strength (P) of 60Mpa to 160Mpa and contained in a supply container 2 are prepared. The bending strength described in the present specification refers to a value of bending stress calculated from the maximum load until the test piece breaks in a bending test according to the standard of ISO178 or the standard of JIS K7171.
The polyolefin resin of the 1 st raw material P1 is preferably a polyolefin resin having a Vicat softening temperature (t) of 30 to 100 ℃. The polyolefin resin may be any resin selected from polyethylene (PE, t=70 to 100 ℃), polypropylene (PP, t=80 to 100 ℃), polyvinyl chloride (PVC, t=70 to 100 ℃), and polystyrene (PS, t=85 to 100 ℃), for example. The vicat softening temperature in the present specification is obtained by a test performed in accordance with the standards of JIS K7206 and ASTM D1525, more specifically, a test condition (test load 50N, temperature rise 50 ℃/h) specified in the B50 method, which is obtained by applying a predetermined test load to a plastic test piece, heating the heat medium at a constant rate, and measuring the temperature of the heat medium when the needle ram enters 1mm from the front surface of the test piece. The 2 nd raw material P2 of the resin having the flexural strength (P) of 60Mpa to 160Mpa may be any resin selected from polyethylene terephthalate (PET, p=75 Mpa to 105 Mpa), polybutylene terephthalate (PBT, p=93 Mpa), acrylic resin (PMMA, p=118 Mpa), polycarbonate (PC, p=85 Mpa), polylactic acid (PLA, p=70 Mpa to 100 Mpa), polyacetal (POM, p=88 Mpa), for example.
The 1 st raw material P1 in the present embodiment shown in fig. 1 is, for example, polyethylene (PE), and the 2 nd raw material P2 contained in the supply container 2 is, for example, polyethylene terephthalate (PET) having a bending strength (P) of 75Mpa to 105 Mpa. The 1 st raw material P1 and the 2 nd raw material P2 are formed in a granular form, so that the conveying is convenient. As shown in step 1 of fig. 1, the 1 st raw material P1 and the 2 nd raw material P2 are fed into the mixing vessel 11 of the raw material manufacturing apparatus 10. The amount of the 2 nd raw material P2 added to the 1 st raw material P1 is preferably, for example, 5 to 50% by volume.
Next, as shown in step 2 of fig. 1, the 1 st raw material P1 and the 2 nd raw material P2 fed into the mixing vessel 11 are heated to a predetermined temperature at which the 1 st raw material P1 and the 2 nd raw material P2 soften and can be properly mixed by operating the heating means 12. The vicat softening temperatures of the 1 st raw material P1 and the 2 nd raw material P2 are compared with each other with respect to the predetermined temperature at the time of heating, and the vicat softening temperature is set to be higher. In the present embodiment, since the vicat softening temperature of the polyethylene of the 1 st raw material P1 is 70 to 100 ℃ and the vicat softening temperature of the polyethylene terephthalate of the 2 nd raw material P2 is 200 to 210 ℃, the heating means 12 is operated to heat the inside of the mixing vessel 11 to 210 ℃, for example.
Next, as shown in step 3 of fig. 1, the softened 1 st raw material P1 and 2 nd raw material P2 are mixed so that the 1 st raw material P1 and the 2 nd raw material P2 are uniformly mixed with each other while the heating means 12 is operated, and the raw material P preferable for the hot-pressed sheet of the present embodiment is produced. In the present embodiment, the mixture is a mixture in which no chemical reaction is involved between the 1 st raw material P1 and the 2 nd raw material P2.
When the hot-pressed sheet material P is produced by the material producing apparatus 10 as described above, the material P stored in the mixing container 11 is transported to the sheet producing apparatus 20 shown in fig. 2 and supplied to the material charging tank 21. The raw material feeding groove 21 feeds the raw material P to the surface of the 1 st roller 22 with a thin and uniform width while maintaining the softened state of the fed raw material P. The sheet substrate S supplied to the 1 st roller 22 is fed to the calender 26 via the 2 nd roller 23, the 3 rd roller 24 and the 4 th roller 25, and is stretched in the longitudinal direction and the width direction, adjusted to a predetermined uniform thickness and a predetermined uniform width, formed into a desired sheet substrate S, and wound up on the winding roller 27. The thickness of the sheet base S of the present embodiment is, for example, 100 μm.
The sheet base S wound around the winding roller 27 is cut into a circular shape according to the processing conditions to be applied as shown in fig. 2 (b), and a hot-pressed sheet T usable as a protective tape or dicing tape to be described later is obtained.
As described above, the thermocompression bonding pad T of the present embodiment is formed by heating a resin having a mixed bending strength (p) of 60Mpa to 160Mpa in a polyolefin resin, and therefore, the characteristics of the thermocompression bonding pad that exhibits adhesive strength by heating can be maintained, and the rigidity can be enhanced as compared with the case where the thermocompression bonding pad is formed only of the polyolefin resin, and the wafer can be supported with high rigidity.
In addition, the polyolefin resin contains a polymer and a copolymer, and it is preferable that the polyolefin resin constituting the heat-pressure bonding sheet T of the present embodiment contains both a polymer and a copolymer. The copolymer contained in the polyolefin resin is preferably, for example, an ethylene-vinyl acetate copolymer (EVA, t=40 to 70 ℃), an ethylene-ethyl acrylate copolymer (EEA, t=40 to 80 ℃), an ionomer (IO, t=40 to 80 ℃), or other copolymers (ABS resin, SBS resin, AS resin).
Hereinafter, a specific use mode of the heat-pressing tab T configured by the above-described embodiment will be described with reference to fig. 3 to 6.
Fig. 3 shows a thermocompression bonding apparatus 30 (only a part of which is shown) for thermocompression bonding a thermocompression bonding sheet T of the present embodiment to a wafer W as a workpiece and an annular frame F. The thermocompression bonding device 30 has a chuck table 32. The chuck table 32 has: a disk-shaped suction chuck 33 formed of a porous material having air permeability; and a frame 34 surrounding the suction chuck 33 and transmitting negative pressure from a suction unit, not shown, to a holding surface of the suction chuck 33.
As can be understood from fig. 3 (a), a frame F having an opening capable of accommodating the wafer W in the center thereof is placed on the suction chuck 33 of the chuck table 32, and the back surface Wb side of the wafer W is placed in the center of the opening while facing upward. Next, the thermocompression bonding sheet T is laid from above the chuck table 32. As shown in fig. 3 (b), the heat and pressure bonding sheet T is formed in a size larger than the suction chuck 33 and slightly smaller than the frame 34. When the thermocompression bonding pad T is applied to the chuck table 32, the suction means is operated to suck the thermocompression bonding pad T, and the thermocompression bonding pad T is brought into close contact with the back surface Wb of the wafer W and the frame F. Next, the heating roller 36 is positioned above the heat-pressing tab T. The heating roller 36 has a heater and a temperature sensor, not shown, inside, and can raise the temperature of the heating roller 36 to a desired temperature. In addition, a fluororesin is coated on the surface of the heating roller 36 so as not to adhere to the surface even if the heat pressing tab T exerts adhesion force.
When the heating roller 36 is positioned on the thermocompression bonding pad T, the heater of the heating roller 36 is operated, the surface of the heating roller 36 is heated to a predetermined temperature (for example, 120 to 140 ℃), and the thermocompression bonding pad T is thermocompression bonded to the wafer W and the frame F by pressing from above the thermocompression bonding pad T and moving in the direction indicated by the arrow R2 while rotating in the direction indicated by the arrow R1. The predetermined temperature is a temperature at which the heat-pressure bonding sheet T exhibits adhesive strength, and is set to be in the vicinity of the melting temperature of the polyolefin resin (polyethylene in the present embodiment) constituting the heat-pressure bonding sheet T.
When the thermocompression bonding sheet T is thermocompression bonded to the wafer W and the frame F, as shown in fig. 3 (c), the cutting tool 38 of the cutting unit 37 is positioned on the frame F. Next, the hot-pressed tab T is cut annularly along the cutting line L1 along the frame F while rotating the cutting tool 38 in the direction indicated by the arrow R3 and rotating the chuck table 32 in the direction indicated by the arrow R4, and the remaining region on the outer peripheral side is removed. The remaining region is removed and the frame F is turned over integrally with the wafer W by the thermocompression bonding sheet T, as shown in fig. 3 (c). In this way, the plurality of wafers W integrated with the frame F by the thermocompression bonding sheet T are stored in the cassette 39 having a plurality of storage grooves as shown in the drawing in the up-down direction.
The plurality of wafers W integrated with the frame F by the thermocompression bonding sheet T as described above are transported to the cutting device 40 (only a part is shown) shown in fig. 4 by the cassette 39. As described above, the thermocompression bonding sheet T of the present embodiment is formed by heating and mixing a resin having a bending strength of 60Mpa to 160Mpa with a polyolefin resin, and therefore, is a sheet exhibiting adhesive force and having rigidity, and even when the sheet is stored in the cassette 39 shown in fig. 3 (c) and transported for a long time, the upper wafer W stored in the cassette 39 does not hang down to a position in contact with the lower wafer W via the thermocompression bonding sheet T, and there is no problem that the wafer W is not obstructed when pulled out from the cassette 39, and there is no problem that an adhesive layer remains when the wafer W is divided into device chips, and the quality of the device chips is degraded.
The cutting device 40 includes: a chuck table (not shown) for sucking and holding the wafer W; and a cutting unit 42 for cutting the wafer W sucked and held on the chuck table. The chuck table is rotatably provided with a moving unit (not shown) for feeding the chuck table in a direction indicated by an arrow X in the drawing. In addition, the cutting unit 42 has: a spindle 45 disposed along a Y axis direction indicated by an arrow Y in the figure and held by the spindle case 43; an annular cutting tool 46 held at the front end of the spindle 45 and covered with a tool cover 44; a cutting water nozzle 47 that supplies cutting water when cutting is performed by the cutting tool 46; and a Y-axis moving unit (not shown) that performs indexing feeding of the cutting tool 46 in the Y-axis direction. The spindle 45 is driven to rotate by a spindle motor, not shown.
When the cutting process is performed by the cutting device 40, the front face Wa of the wafer W carried out together with the frame F from the cassette 39 is first placed on the chuck table of the cutting device 40 to be sucked and held, and a predetermined line for dividing the wafer W is aligned with the X-axis direction by an alignment means, not shown, and aligned with the cutting tool 46. Next, the cutting tool 46 rotating at a high speed is positioned on a line to divide aligned with the X-axis direction, and is cut in from the front face Wa side, and the chuck table is subjected to machining feed in the X-axis direction to form the cutting groove 100. The Y-axis moving means is operated to index the cutting tool 46 of the cutting means 42 to an unprocessed dividing line adjacent to the dividing line where the cutting groove 100 is formed in the Y-axis direction, and the cutting groove 100 is formed in the same manner as described above. By repeating the above-described process, the cutting groove 100 is formed along all the dividing schedule lines in the X-axis direction. Next, the chuck table is rotated by 90 degrees to align the direction perpendicular to the direction in which the cutting grooves 100 were formed with the X-axis direction, and the cutting process is performed on all the predetermined dividing lines newly aligned with the X-axis direction, so that the cutting grooves 100 are formed along all the predetermined dividing lines formed on the wafer W. When the wafer W is subjected to the cutting process in this way, the wafer W is transported to a cleaning device, not shown, using a transport unit, not shown, and cleaned and dried by the cleaning device. After the completion of the cleaning and drying, the wafer W is stored in the cassette 39 at a position where the wafer W is originally stored. When the wafers W after the cutting process are stored in the cassette 39, the wafers W do not hang down via the thermocompression bonding sheet T, and there is no problem that the wafers W are blocked when they are returned to the cassette 39.
In the above embodiment, the following examples are shown: the wafer W is integrally supported by the annular frame F having the opening for accommodating the wafer W in the center thereof using the thermocompression bonding pad T configured according to the present embodiment, and the wafer W is subjected to cutting processing. For example, the thermocompression bonding sheet T shown in fig. 2 (b) may be used as a protective sheet for grinding the wafer W. The embodiment in which the hot pressing tab T is used for grinding is described below with reference to fig. 5 and 6.
When the thermocompression bonding sheet T obtained from the sheet base S shown in fig. 2 (b) is used, the wafer W is conveyed to the thermocompression bonding device 50 shown in fig. 5 (only a part is shown). The thermocompression bonding device 50 has a chuck table 52. The chuck table 52 has: a disk-shaped suction chuck 53 formed of a porous material having air permeability; and a housing 54 surrounding the suction chuck 53 and transmitting negative pressure from a suction unit, not shown, to a holding surface of the suction chuck 53.
The wafer W conveyed to the thermocompression bonding device 50 is placed in the center of the suction chuck 53 of the chuck table 52 with the front surface Wa facing upward. The wafer W is a wafer W having a plurality of devices D formed on the front surface Wa divided by the dividing lines. Next, as shown in fig. 5 (a), the thermocompression bonding sheet T of the present embodiment is laid from above the chuck table 52. As shown in fig. 5 (b), the heat-pressing tab T is formed in a size larger than the suction chuck 53 and slightly smaller than the frame 54. When the thermocompression bonding pad T is applied to the chuck table 52, a suction means, not shown, is operated to suck the thermocompression bonding pad T, and the thermocompression bonding pad T is brought into close contact with the front surface Wa of the wafer W. Next, the heating roller 55 is positioned above the heat-pressing tab T. The heating roller 55 has a heater and a temperature sensor, not shown, inside, and can raise the temperature of the heating roller 55 to a desired temperature. In addition, a fluororesin is coated on the surface of the heating roller 55 so as not to adhere to the surface even if the heat pressing tab T exerts adhesion force.
When the heating roller 55 is positioned on the thermocompression bonding pad T, the heater of the heating roller 55 is operated, the surface of the heating roller 55 is heated to a predetermined temperature (for example, 120 to 140 ℃), and the thermocompression bonding pad T is thermocompression bonded to the front surface Wa of the wafer W by pressing from above the thermocompression bonding pad T and moving in the direction indicated by the arrow R6 while rotating in the direction indicated by the arrow R5. The predetermined temperature is a temperature at which the heat-pressure bonding sheet T exhibits adhesive strength, and is set to be in the vicinity of the melting temperature of the polyolefin resin (polyethylene in the present embodiment) constituting the heat-pressure bonding sheet T.
When the thermocompression bonding sheet T is thermocompression bonded to the wafer W, as shown in fig. 5 (c), the cutting unit 56 is positioned at the outer edge of the wafer W. Next, the heat-pressing tab T is cut into a circular shape along the cutting line L2 along the outer edge of the wafer W while rotating the cutting tool 57 of the cutting unit 56 in the direction indicated by the arrow R7, and the remaining region on the outer peripheral side is removed. The remaining area on the outer peripheral side of the thermocompression bonding pad T is removed, so that the thermocompression bonding pad T and the wafer W are integrated, and this state is shown in the lower right side of fig. 5 (c). When the wafer W and the thermocompression bonding pad T are integrated in this manner, the wafer W is transported to a grinding device 60 (only a part of which is shown) shown in fig. 6.
As shown in fig. 6 (a), the grinding device 60 has a chuck table 61. The chuck table 61 includes: a disk-shaped suction chuck 62 formed of a porous material having air permeability; and a frame 63 surrounding the suction chuck 62 and transmitting negative pressure from a suction unit, not shown, to a holding surface of the suction chuck 62. The wafer W conveyed to the grinding device 60 is placed on the suction chuck 62 of the chuck table 61 with the back surface Wb side of the wafer W facing upward and the thermocompression bonding sheet T side facing downward, and the suction means is operated to perform suction holding.
Next, a moving means, not shown, is operated, and as shown in fig. 6 (b), the chuck table 61 is positioned in the machining area directly below the grinding means 64. The grinding unit 64 has: a rotation main shaft 65 rotated by a rotation driving mechanism not shown; a grinding wheel mount 66 mounted to the lower end of the rotary spindle 65; and a grinding wheel 67 attached to the lower surface of the wheel mount 66, and a plurality of grinding tools 68 are annularly arranged on the lower surface of the grinding wheel 67.
When the wafer W held by suction on the chuck table 61 is positioned directly below the grinding unit 64, the rotation spindle 65 of the grinding unit 64 is rotated at 6000rpm, for example, in the direction indicated by the arrow R9 in fig. 6 (b), and the chuck table 61 is rotated at 300rpm, for example, in the direction indicated by the arrow R10. The grinding water is supplied to the back surface Wb of the wafer W by a grinding water supply means, not shown, and a grinding feed means, not shown, is operated to lower the grinding means 64 in the direction indicated by the arrow R11 in the figure, bring the grinding tool 68 into contact with the back surface Wb of the wafer W, and the grinding means 64 performs grinding feed at a grinding feed speed of, for example, 1 μm/sec. In this case, the thickness of the wafer W can be measured by a contact gauge, not shown, and the rear surface Wb of the wafer W can be ground by a predetermined amount to set the wafer W to a predetermined thickness. When the grinding is completed by a predetermined amount, the grinding unit 64 is stopped, and the back surface grinding process for grinding the back surface Wb of the wafer W is completed through the cleaning and drying steps and the like.
When the back surface grinding is completed, the wafer W is sucked by a not-shown conveying means and conveyed to a next step or stored in a not-shown cassette or the like. In this case, since the thermocompression bonding sheet T of the present embodiment is a rigid sheet formed by heating and mixing a resin having a bending strength of 60Mpa to 160Mpa with a polyolefin resin, the wafer W can be stably supported and transported even when thinned, and an adhesive layer is not left when the wafer W is divided into device chips, and the quality is not degraded.

Claims (5)

1. A hot-pressed joint sheet, wherein,
the heat-pressed sheet is formed by heating and mixing a polyolefin resin with a resin having a flexural strength of 60 to 160 MPa.
2. The heat and pressure tab of claim 1 wherein,
the Vicat softening temperature of the polyolefin resin is 30-100 ℃.
3. The heat and pressure tab of claim 2 wherein,
as the polyolefin resin having a Vicat softening temperature of 30 to 100 ℃, any resin selected from polyethylene, polypropylene, polyvinyl chloride and polystyrene is selected.
4. The heat and pressure bonding sheet according to any of claims 1 to 3, wherein,
as the resin having a flexural strength of 60 to 160MPa, any one of polyethylene terephthalate, polybutylene terephthalate, acrylic resin, polycarbonate, polylactic acid and polyacetal is selected.
5. The heat and pressure tab of any one of claims 1-4 wherein,
the polyolefin resin is blended with a resin having a bending strength of 60 to 160MPa in a volume ratio of 5 to 50%.
CN202310148667.5A 2022-02-24 2023-02-21 Hot-pressing joint sheet Pending CN116640371A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-026517 2022-02-24
JP2022026517A JP2023122799A (en) 2022-02-24 2022-02-24 Thermocompression bonding sheet

Publications (1)

Publication Number Publication Date
CN116640371A true CN116640371A (en) 2023-08-25

Family

ID=87638764

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202310148667.5A Pending CN116640371A (en) 2022-02-24 2023-02-21 Hot-pressing joint sheet

Country Status (4)

Country Link
JP (1) JP2023122799A (en)
KR (1) KR20230127151A (en)
CN (1) CN116640371A (en)
TW (1) TW202334362A (en)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019186488A (en) 2018-04-16 2019-10-24 株式会社ディスコ Wafer processing method
JP7281873B2 (en) 2018-05-14 2023-05-26 株式会社ディスコ Wafer processing method

Also Published As

Publication number Publication date
KR20230127151A (en) 2023-08-31
TW202334362A (en) 2023-09-01
JP2023122799A (en) 2023-09-05

Similar Documents

Publication Publication Date Title
CN110783249A (en) Method for processing wafer
KR20210054986A (en) Wafer processing method
JP7201342B2 (en) Wafer processing method
JP2019186488A (en) Wafer processing method
CN116640371A (en) Hot-pressing joint sheet
JP7374657B2 (en) Wafer processing method
TWI827701B (en) Wafer processing methods
CN110429062B (en) Wafer processing method
JP7317482B2 (en) Wafer processing method
JP2021185591A (en) Wafer processing method
US20220037160A1 (en) Processing method of wafer, protective sheet, and protective sheet laying method
CN110867396A (en) Method for protecting wafer
JP7355568B2 (en) Wafer processing method
KR20240002696A (en) Method of forming mask
TW202108303A (en) Processing method for wafer
JP2022126089A (en) Wafer processing method
JP2022027441A (en) Processing method of wafer, protective sheet, and protective sheet laying method
JP2020031183A (en) Wafer protection method, protective member, and protective member production method
TW202407754A (en) Chip treating method
JP2023127491A (en) Adhering method for protective sheet and processing method for wafer
JP2021048288A (en) Wafer processing method
JP2021174934A (en) Chip manufacturing method and edge trimming device
JP2021068742A (en) Ring frame

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication