TW202334362A - Thermocompression bonding sheet made of polyolefin-based resin and being capable of supporting a wafer with sufficient rigidity - Google Patents
Thermocompression bonding sheet made of polyolefin-based resin and being capable of supporting a wafer with sufficient rigidity Download PDFInfo
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- TW202334362A TW202334362A TW112106202A TW112106202A TW202334362A TW 202334362 A TW202334362 A TW 202334362A TW 112106202 A TW112106202 A TW 112106202A TW 112106202 A TW112106202 A TW 112106202A TW 202334362 A TW202334362 A TW 202334362A
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- wafer
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- bonding sheet
- polyolefin
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- 229920005672 polyolefin resin Polymers 0.000 title claims abstract description 33
- 229920005989 resin Polymers 0.000 claims abstract description 17
- 239000011347 resin Substances 0.000 claims abstract description 17
- 238000005452 bending Methods 0.000 claims abstract description 15
- 238000010438 heat treatment Methods 0.000 claims description 28
- -1 polyethylene Polymers 0.000 claims description 26
- 238000002156 mixing Methods 0.000 claims description 13
- 239000004698 Polyethylene Substances 0.000 claims description 9
- 229920000573 polyethylene Polymers 0.000 claims description 9
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 7
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 7
- JFUIHGAGFMFNRD-UHFFFAOYSA-N fica Chemical compound FC1=CC=C2NC(C(=O)NCCS)=CC2=C1 JFUIHGAGFMFNRD-UHFFFAOYSA-N 0.000 claims description 5
- 239000004743 Polypropylene Substances 0.000 claims description 4
- 239000004793 Polystyrene Substances 0.000 claims description 4
- 229920000747 poly(lactic acid) Polymers 0.000 claims description 4
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 4
- 239000004417 polycarbonate Substances 0.000 claims description 4
- 239000004626 polylactic acid Substances 0.000 claims description 4
- 229920006324 polyoxymethylene Polymers 0.000 claims description 4
- 229920000915 polyvinyl chloride Polymers 0.000 claims description 4
- 239000004800 polyvinyl chloride Substances 0.000 claims description 4
- 229930182556 Polyacetal Natural products 0.000 claims description 3
- 229920000515 polycarbonate Polymers 0.000 claims description 3
- 229920001155 polypropylene Polymers 0.000 claims description 3
- 229920002223 polystyrene Polymers 0.000 claims description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 94
- 239000002994 raw material Substances 0.000 description 50
- 238000005520 cutting process Methods 0.000 description 39
- 238000000227 grinding Methods 0.000 description 34
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 9
- 230000001681 protective effect Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 6
- 239000002313 adhesive film Substances 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 5
- 229920001577 copolymer Polymers 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 238000001179 sorption measurement Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000011148 porous material Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- C08J5/18—Manufacture of films or sheets
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- C09J7/00—Adhesives in the form of films or foils
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- C09J7/35—Heat-activated
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- C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
- C09J7/38—Pressure-sensitive adhesives [PSA]
- C09J7/381—Pressure-sensitive adhesives [PSA] based on macromolecular compounds obtained by reactions involving only carbon-to-carbon unsaturated bonds
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
- C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
- C08J2323/04—Homopolymers or copolymers of ethene
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- C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
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- C08J2325/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring; Derivatives of such polymers
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- C08J2327/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers
- C08J2327/02—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment
- C08J2327/04—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Derivatives of such polymers not modified by chemical after-treatment containing chlorine atoms
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- C08J2433/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
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- C08J2467/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
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- C08J2467/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
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- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
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- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract
Description
本發明係關於一種至少包含聚烯烴系樹脂之熱壓接薄片。The present invention relates to a thermocompression bonding sheet containing at least polyolefin resin.
在正面形成有藉由分割預定線所劃分之IC、LSI等多個元件之晶圓，係藉由研削裝置研削背面而形成為預期的厚度後，藉由切割裝置、雷射加工裝置而被分割成一個個元件晶片，並被利用於行動電話、個人電腦等電子設備。A wafer with a plurality of components such as ICs and LSIs divided by planned dividing lines is formed on the front side. After the back side is ground to the desired thickness by a grinding device, it is divided by a cutting device or a laser processing device. It is turned into component chips one by one and is used in electronic devices such as mobile phones and personal computers.
藉由研削裝置研削晶圓的背面之情形，係在晶圓的正面黏貼有保護膠膜，以使保持於卡盤台之正面不會損傷。When the back side of the wafer is ground by a grinding device, a protective film is attached to the front side of the wafer so that the front side held on the chuck table will not be damaged.
並且，藉由切割裝置、雷射加工裝置而將晶圓分割成一個個元件晶片之情形，係透過切割膠膜而將晶圓支撐於在中央具備容納晶圓之開口之框架，即使晶圓被分割成一個個元件晶片，亦能保持晶圓的形態而搬送至下一步驟。In addition, when the wafer is divided into individual component wafers by a dicing device or a laser processing device, the wafer is supported on a frame with an opening for accommodating the wafer in the center through the dicing film, even if the wafer is Even when divided into component wafers, the wafer shape can be maintained and transported to the next step.
一般而言，上述的保護膠膜、切割膠膜在表面形成有黏著層，因此若在加工後從晶圓剝離，則黏著層的一部分被剝離，而殘留於晶圓或元件晶片的正面，存在使元件晶片的品質降低之問題。Generally speaking, the above-mentioned protective adhesive film and dicing adhesive film have an adhesive layer formed on the surface. Therefore, if they are peeled off from the wafer after processing, part of the adhesive layer will be peeled off and remain on the front surface of the wafer or component wafer. The problem of reducing the quality of component chips.
於是，本申請人已提案開發將聚烯烴系樹脂的薄片熱壓接於晶圓之熱壓接薄片，且將不具有黏著層之該熱壓接薄片使用作為上述的保護膠膜或切割膠膜，藉此解決黏著層的一部分被剝離而殘留，使元件晶片的品質降低之問題（例如參照專利文獻1、2）。 [習知技術文獻] [專利文獻] Therefore, the present applicant has proposed to develop a thermocompression bonding sheet in which a polyolefin-based resin sheet is thermocompression bonded to a wafer, and to use the thermocompression bonding sheet without an adhesive layer as the above-mentioned protective film or dicing film. , thereby solving the problem of a part of the adhesive layer being peeled off and remaining, thereby degrading the quality of the device chip (for example, refer to Patent Documents 1 and 2). [Known technical documents] [Patent Document]
[專利文獻1]日本特開2019-201016號公報 [專利文獻2]日本特開2019-186488號公報 [Patent Document 1] Japanese Patent Application Publication No. 2019-201016 [Patent Document 2] Japanese Patent Application Publication No. 2019-186488
[發明所欲解決的課題] 然而，透過上述的熱壓接薄片而將晶圓支撐於在中央具備容納晶圓之開口之環狀的框架，且在具備多個容納槽之卡匣以預定的間隔容納多片而進行搬送之情形，若採用上述的聚烯烴系樹脂的熱壓接薄片作為該熱壓接薄片，則因聚烯烴系樹脂的熱壓接薄片沒有剛度，故隨著時間的經過，容納於卡匣之上方的晶圓係透過該熱壓接薄片下垂至與下方的晶圓接觸之位置為止，而在從該卡匣將晶圓與框架一起取出時，或者將加工後的晶圓返回卡匣時等存在產生障礙之問題。 [Problem to be solved by the invention] However, the wafer is supported on an annular frame having an opening for accommodating the wafer in the center through the above-described thermocompression bonding sheet, and a plurality of wafers are accommodated in a cassette with a plurality of accommodating grooves at predetermined intervals for transportation. In this case, if the thermocompression bonding sheet of the above-mentioned polyolefin resin is used as the thermocompression bonding sheet, the thermocompression bonding sheet of the polyolefin resin has no rigidity, so as time passes, the thermocompression bonding sheet accommodated above the cassette The wafer hangs down through the thermocompression bonding sheet until it contacts the wafer below. This may occur when the wafer is taken out from the cassette together with the frame, or when the processed wafer is returned to the cassette. The problem of obstacles.
並且，在研削裝置中，係將以與晶圓相同的尺寸形成之保護膠膜黏貼於晶圓的正面，將保護膠膜側保持於保持手段，研削晶圓的背面而進行薄化。藉由研削裝置而被薄化之晶圓雖被該保護膠膜保持，但在採用上述的聚烯烴系樹脂的熱壓接薄片作為該保護膠膜之情形中，因該熱壓接薄片沒有剛度，故無法以足夠的剛性支撐經薄化之晶圓，而存在搬送耗費時間與勞力之問題。Furthermore, in the grinding device, a protective adhesive film formed with the same size as the wafer is attached to the front side of the wafer, the protective adhesive film side is held on the holding means, and the back side of the wafer is ground and thinned. Although the wafer thinned by the grinding device is held by the protective film, when the thermocompression bonding sheet of the above-mentioned polyolefin resin is used as the protective film, the thermocompression bonding sheet has no rigidity. , so the thinned wafer cannot be supported with sufficient rigidity, and transportation is time-consuming and labor-intensive.
本發明係鑒於上述事實所完成，其主要之技術課題在於提供一種熱壓接薄片，其實現能以足夠的剛性支撐晶圓的聚烯烴系樹脂的熱壓接薄片，例如，即使透過聚烯烴系樹脂的熱壓接薄片而將晶圓支撐於在中央具備容納晶圓之開口之環狀的框架，在卡匣等容納容器於上下方向容納多片之情形，被容納之晶圓亦不會下垂，不會與容納於下方之晶圓接觸。The present invention was completed in view of the above-mentioned facts, and its main technical subject is to provide a thermocompression bonding sheet that is a polyolefin-based resin thermocompression bonding sheet that can support a wafer with sufficient rigidity, for example, even if a polyolefin-based resin is penetrated The wafer is supported on a ring-shaped frame with an opening for accommodating the wafer in the center by thermo-compression bonding the resin sheet. When multiple wafers are accommodated in a container such as a cassette in the up and down direction, the accommodated wafer will not sag. , will not come into contact with the wafer accommodated below.
[解決課題的技術手段] 為了解決上述主要之技術課題，根據本發明，提供一種熱壓接薄片，其係在聚烯烴系樹脂中加熱混合彎曲強度為60～160Mpa的樹脂而構成之熱壓接薄片。 [Technical means to solve the problem] In order to solve the above-mentioned main technical problems, according to the present invention, a thermocompression bonding sheet is provided, which is a thermocompression bonding sheet formed by heating and mixing a resin with a bending strength of 60 to 160 MPa in a polyolefin resin.
該聚烯烴系樹脂較佳為菲卡軟化溫度為30～100℃。再者，作為該菲卡軟化溫度為30～100℃的聚烯烴系樹脂，較佳為選擇聚乙烯、聚丙烯、聚氯乙烯、聚苯乙烯的任一者。並且，作為該彎曲強度為60～160Mpa的樹脂，較佳為選擇聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、丙烯酸樹脂、聚碳酸酯、聚乳酸、聚縮醛的任一者，較佳為對該聚烯烴系樹脂混入體積比5～50%的彎曲強度為60～160Mpa的樹脂。The polyolefin-based resin preferably has a Ficar softening temperature of 30 to 100°C. Furthermore, as the polyolefin-based resin having a FICA softening temperature of 30 to 100° C., it is preferable to select any one of polyethylene, polypropylene, polyvinyl chloride, and polystyrene. Furthermore, the resin having a bending strength of 60 to 160 MPa is preferably selected from polyethylene terephthalate, polybutylene terephthalate, acrylic resin, polycarbonate, polylactic acid, and polyacetal. First, it is preferable to mix a resin with a flexural strength of 60 to 160 MPa in a volume ratio of 5 to 50% into the polyolefin resin.
[發明功效] 本發明的熱壓接薄片係在聚烯烴系樹脂中加熱混合彎曲強度為60～160Mpa的樹脂而構成，因此可實現能以足夠的剛性支撐晶圓的聚烯烴系樹脂的熱壓接薄片。 [Invention effect] The thermocompression bonding sheet of the present invention is made by heating and mixing a polyolefin-based resin with a resin having a bending strength of 60 to 160 MPa. Therefore, it is possible to realize a polyolefin-based resin thermocompression bonding sheet that can support a wafer with sufficient rigidity.
以下，針對基於本發明而構成之熱壓接薄片之實施方式，一邊參照隨附圖式，一邊詳細地進行說明。Hereinafter, embodiments of the thermocompression bonded sheet constructed based on the present invention will be described in detail with reference to the accompanying drawings.
在圖1中，表示製造本實施方式的熱壓接薄片的原料P之步驟1～3的概念圖。使用於製造原料P之原料製造裝置10包含混合容器11與將混合容器11加熱至預定的溫度為止之加熱手段12。FIG. 1 is a conceptual diagram showing steps 1 to 3 of manufacturing the raw material P of the thermocompression-bonded sheet according to this embodiment. The raw material manufacturing apparatus 10 used for manufacturing the raw material P includes the mixing container 11 and the heating means 12 which heats the mixing container 11 to a predetermined temperature.
本實施方式的熱壓接薄片的原料P係藉由以下的步驟而形成。更具體而言，係至少準備容納於供給容器1之由聚烯烴系樹脂所構成之第一原料P1與容納於供給容器2之由彎曲強度（p）為60～160Mpa的樹脂所構成之第二原料P2。此外，本案說明書所記載之所謂彎曲強度，係指在按照ISO178的標準或JIS K7171的標準之彎曲試驗中，以試驗片到達破壞為止的最大負載為基礎而算出之彎曲應力的值。The raw material P of the thermocompression bonding sheet of this embodiment is formed by the following steps. More specifically, at least the first raw material P1 composed of a polyolefin-based resin contained in the supply container 1 and the second material composed of a resin with a bending strength (p) of 60 to 160 MPa contained in the supply container 2 are prepared. Raw material P2. In addition, the bending strength described in the specification of this case refers to the value of the bending stress calculated based on the maximum load until the test piece breaks in a bending test in accordance with the ISO178 standard or the JIS K7171 standard.
第一原料P1的聚烯烴系樹脂較佳為菲卡軟化溫度（t）為30～100℃之聚烯烴系樹脂。作為該聚烯烴系樹脂，例如可從聚乙烯（PE，t＝70～100℃）、聚丙烯（PP，t＝80～100℃）、聚氯乙烯（PVC，t＝70～100℃）、聚苯乙烯（PS，t＝85～100℃）的任一者中進行選擇。此外，本案說明書中之所謂菲卡軟化溫度，係指按照JIS K7206、ASTM D1525的標準而實施之試驗，更具體而言，係對塑膠試驗片施加所規定之試驗負載並以一定的速度使傳熱介質升溫，測量針狀壓頭從試驗片的表面侵入1mm時的傳熱介質的溫度而得到之溫度，試驗條件為依B50法所規定之條件（試驗負載50N、升溫溫度50℃/h）。彎曲強度（p）為60～160Mpa的樹脂之第二原料P2例如可從聚對苯二甲酸乙二酯（PET，p＝75～105Mpa）、聚對苯二甲酸丁二酯（PBT，p＝93Mpa）、丙烯酸樹脂（PMMA、p＝118Mpa）、聚碳酸酯（PC、p＝85Mpa）、聚乳酸（PLA、p＝70～100Mpa）、聚縮醛（POM、p＝88Mpa）的任一者中進行選擇。The polyolefin-based resin of the first raw material P1 is preferably a polyolefin-based resin with a Ficar softening temperature (t) of 30 to 100°C. As the polyolefin-based resin, for example, polyethylene (PE, t=70 to 100°C), polypropylene (PP, t=80 to 100°C), polyvinyl chloride (PVC, t=70 to 100°C), Choose from any one of polystyrene (PS, t = 85 to 100°C). In addition, the so-called FICA softening temperature in the specification of this case refers to the test carried out in accordance with the standards of JIS K7206 and ASTM D1525. More specifically, the test load is applied to the plastic test piece and the transmission is carried out at a certain speed. The heat medium is heated, and the temperature is obtained by measuring the temperature of the heat transfer medium when the needle indenter penetrates 1mm from the surface of the test piece. The test conditions are those specified in the B50 method (test load 50N, heating temperature 50℃/h) . The second raw material P2 of the resin with a bending strength (p) of 60 to 160 MPa can be selected from, for example, polyethylene terephthalate (PET, p = 75 to 105 MPa), polybutylene terephthalate (PBT, p = 93Mpa), acrylic resin (PMMA, p=118Mpa), polycarbonate (PC, p=85Mpa), polylactic acid (PLA, p=70~100Mpa), polyacetal (POM, p=88Mpa) Select from .
圖1所示之本實施方式的第一原料P1例如為聚乙烯（PE），容納於供給容器2之第二原料P2例如為彎曲強度（p）為75～105Mpa的聚對苯二甲酸乙二酯（PET）。第一原料P1、第二原料P2皆以顆粒狀形成，而便於搬送。如圖1的步驟1所示，對原料製造裝置10的混合容器11投入第一原料P1及第二原料P2。第二原料P2相對於第一原料P1的投入量例如較佳為體積比5～50%。The first raw material P1 of this embodiment shown in FIG. 1 is, for example, polyethylene (PE), and the second raw material P2 contained in the supply container 2 is, for example, polyethylene terephthalate with a bending strength (p) of 75 to 105 MPa. ester (PET). The first raw material P1 and the second raw material P2 are both formed into granules for easy transportation. As shown in step 1 of FIG. 1 , the first raw material P1 and the second raw material P2 are put into the mixing container 11 of the raw material manufacturing device 10 . The input amount of the second raw material P2 relative to the first raw material P1 is preferably, for example, a volume ratio of 5 to 50%.
接著，如圖1的步驟2所示，藉由運作加熱手段12，而將已投入混合容器11之第一原料P1與第二原料P2加熱至第一原料P1及第二原料P2軟化並能適當混合的預定的溫度。比較第一原料P1與第二原料P2的菲卡軟化溫度，將進行該加熱之際的預定的溫度設定成高的一者的菲卡軟化溫度。在本實施方式中，第一原料P1的聚乙烯的菲卡軟化溫度為70～100℃，且第二原料P2的聚對苯二甲酸乙二酯的菲卡軟化溫度為200～210℃，因此例如運作該加熱手段12，而加熱至混合容器11內的溫度成為210℃。Next, as shown in step 2 of FIG. 1 , by operating the heating means 12 , the first raw material P1 and the second raw material P2 that have been put into the mixing container 11 are heated until the first raw material P1 and the second raw material P2 are softened and can be properly Mix at a predetermined temperature. The Fica softening temperatures of the first raw material P1 and the second raw material P2 are compared, and the predetermined temperature when performing the heating is set to the higher Fica softening temperature. In this embodiment, the polyethylene of the first raw material P1 has a Ficar softening temperature of 70 to 100°C, and the polyethylene terephthalate of the second raw material P2 has a Ficar softening temperature of 200 to 210°C. Therefore, For example, the heating means 12 is operated to heat the temperature in the mixing container 11 to 210°C.
接著，如圖1的步驟3所示，在加熱手段12的運作的同時，將已軟化之第一原料P1與第二原料P2以第一原料P1與第二原料P2均勻地混合之方式進行混合，作為對於本實施方式的熱壓接薄片而言較佳的原料P。此外，本實施方式中之混合為在第一原料P1與第二原料P2之間不伴隨化學反應之混合。Next, as shown in step 3 of FIG. 1 , while the heating means 12 is operating, the softened first raw material P1 and the second raw material P2 are mixed in such a manner that the first raw material P1 and the second raw material P2 are evenly mixed. , as a preferred raw material P for the thermocompression bonding sheet of this embodiment. In addition, the mixing in this embodiment is mixing without chemical reaction between the first raw material P1 and the second raw material P2.
如上述，若藉由原料製造裝置10而製造熱壓接薄片的原料P，則將容納於混合容器11之原料P搬送至圖2所示之薄片製造裝置20，供給至原料投入槽21。該原料投入槽21係一邊維持所投入之原料P為軟化之狀態，一邊以薄且均勻的寬度供給至第一輥22的表面。被供給至旋轉之第一輥22之薄片基材S係經過旋轉之第二輥23、第三輥24及第四輥25而投入延伸機26，在長邊方向及寬度方向被延伸，調整成預定的均勻的厚度及預定的均勻的寬度，而成形為預期的薄片基材S，被捲收於捲收輥27。此外，本實施方式的薄片基材S的厚度例如為100µm。As described above, when the raw material P of the thermocompression bonded sheet is manufactured by the raw material manufacturing device 10, the raw material P accommodated in the mixing container 11 is transported to the sheet manufacturing device 20 shown in FIG. 2 and supplied to the raw material input tank 21. The raw material input chute 21 supplies the input raw material P with a thin and uniform width to the surface of the first roller 22 while maintaining a softened state. The sheet base material S supplied to the rotating first roller 22 passes through the rotating second roller 23, the third roller 24 and the fourth roller 25 and is put into the stretching machine 26, and is stretched in the longitudinal direction and the width direction, and is adjusted to The sheet base material S is formed into a desired sheet substrate S with a predetermined uniform thickness and a predetermined uniform width, and is wound up by the winding roller 27 . In addition, the thickness of the sheet base material S of this embodiment is, for example, 100 μm.
如圖2（b）所示，配合所實施之加工條件而將被捲收於上述捲收輥27之薄片基材S切斷成圓形狀，藉此得到使用作為後述之保護膠膜、切割膠膜之熱壓接薄片T。As shown in FIG. 2(b) , the sheet base material S rolled up by the winding roller 27 is cut into a circular shape according to the processing conditions to be used, thereby obtaining a protective film and a cutting glue which will be described later. Film thermocompression bonding sheet T.
如上述，因本實施方式的熱壓接薄片T係在聚烯烴系樹脂中加熱混合彎曲強度（p）為60～160Mpa的樹脂而構成之薄片，故維持藉由加熱而發揮黏著力之熱壓接薄片的特性，且相較於僅藉由聚烯烴系樹脂而形成熱壓接薄片之情形剛度變強，可利用高剛性支撐晶圓。As described above, the thermocompression-bonded sheet T of this embodiment is a sheet composed of a polyolefin-based resin that is heated and mixed with a resin having a bending strength (p) of 60 to 160 MPa. Therefore, the thermocompression bonding sheet T that exerts adhesive force by heating is maintained. The properties of the bonded sheet are enhanced, and the rigidity becomes stronger compared to the case where the thermocompression bonded sheet is formed only from polyolefin-based resin, and the wafer can be supported with high rigidity.
此外，在聚烯烴系樹脂中存在聚合物及共聚物，在構成本實施方式的熱壓接薄片T之聚烯烴系樹脂中，較佳為包含聚合物及共聚物雙方。作為該聚烯烴系樹脂所含之共聚物，例如較佳為乙烯-醋酸乙烯酯共聚物（EVA，t＝40～70℃）、乙烯-丙烯酸乙烯酯共聚物（EEA，t＝40～80℃）、離子聚合物（IO、t＝40～80℃）或其他共聚物（ABS樹脂、SBS樹脂、AS樹脂）等。In addition, polymers and copolymers exist in polyolefin-based resins, and the polyolefin-based resin constituting the thermocompression bonding sheet T of this embodiment preferably contains both polymers and copolymers. As the copolymer contained in the polyolefin resin, for example, ethylene-vinyl acetate copolymer (EVA, t=40 to 70°C) and ethylene-vinyl acrylate copolymer (EEA, t=40 to 80°C) are preferred. ), ionic polymers (IO, t=40~80℃) or other copolymers (ABS resin, SBS resin, AS resin), etc.
針對由上述之實施方式所構成之熱壓接薄片T的具體的使用方式，一邊參照圖3～6，一邊在以下說明。A specific usage manner of the thermocompression-bonded sheet T composed of the above-described embodiment will be described below with reference to FIGS. 3 to 6 .
在圖3中，表示將本實施方式的熱壓接薄片T熱壓接於成為被加工物之晶圓W與環狀的框架F之熱壓接裝置30（僅表示一部分）。熱壓接裝置30具備卡盤台32。卡盤台32具備：圓板形狀的吸附卡盤33，其係以具有通氣性之多孔材所形成；以及框體34，其圍繞該吸附卡盤33，且將來自省略圖示之吸引手段的負壓傳遞至吸附卡盤33的保持面。FIG. 3 shows a thermocompression bonding device 30 (only part of which is shown) for thermocompression bonding the thermocompression bonding sheet T of this embodiment to the wafer W and the annular frame F that are to be processed. The thermocompression bonding device 30 includes a chuck table 32 . The chuck table 32 is provided with: a disk-shaped suction chuck 33 formed of a breathable porous material; and a frame 34 surrounding the suction chuck 33 and absorbing the suction chuck 33 from a suction means (not shown). The negative pressure is transmitted to the holding surface of the suction chuck 33 .
從圖3（a）可以理解，將在中央具備能容納晶圓W的開口之框架F載置於卡盤台32的吸附卡盤33上，且將晶圓W的背面Wb側朝向上方而載置於該開口的中央。接著，從卡盤台32的上方鋪設熱壓接薄片T。如圖3（b）所示，熱壓接薄片T係以大於吸附卡盤33且稍微小於框體34的尺寸形成。若將熱壓接薄片T鋪設於卡盤台32，則運作上述之吸引手段而吸引熱壓接薄片T，使其與晶圓W的背面Wb及框架F密接。接著，將加熱輥36定位於熱壓接薄片T的上方。加熱輥36在內部具備省略圖示之加熱器與溫度感測器，可將加熱輥36升溫至預期的溫度。並且，在加熱輥36的表面塗布有氟樹脂，使熱壓接薄片T即使發揮黏著力亦不會黏著於該表面。As can be understood from FIG. 3( a ), the frame F having an opening in the center that can accommodate the wafer W is placed on the suction chuck 33 of the chuck table 32 , and the back surface Wb side of the wafer W is directed upward. Place in the center of this opening. Next, the thermocompression bonding sheet T is laid from above the chuck table 32 . As shown in FIG. 3( b ), the thermocompression bonding sheet T is formed to be larger than the suction chuck 33 and slightly smaller than the frame 34 . When the thermocompression bonding sheet T is laid on the chuck table 32, the above-mentioned suction means is operated to attract the thermocompression bonding sheet T so that it is in close contact with the back surface Wb of the wafer W and the frame F. Next, the heating roller 36 is positioned above the thermocompression bonding sheet T. The heating roller 36 is equipped with a heater and a temperature sensor (not shown) inside, which can heat the heating roller 36 to a desired temperature. Furthermore, the surface of the heating roller 36 is coated with fluororesin so that the thermocompression bonding sheet T does not stick to the surface even if it exerts adhesive force.
若將加熱輥36定位於熱壓接薄片T上，則運作加熱輥36的該加熱器，將加熱輥36的表面加熱至預定的溫度（例如120～140℃）並從熱壓接薄片T的上方進行推壓，使其一邊往箭頭R1所示之方向旋轉，一邊往箭頭R2所示之方向移動，將熱壓接薄片T熱壓接於晶圓W與框架F。該預定的溫度為熱壓接薄片T發揮黏著力之溫度，且被設定於構成熱壓接薄片T之聚烯烴系樹脂（在本實施方式中為聚乙烯）的熔融溫度附近。When the heating roller 36 is positioned on the thermocompression bonding sheet T, the heater of the heating roller 36 is operated to heat the surface of the heating roller 36 to a predetermined temperature (for example, 120 to 140° C.) and remove the heat from the thermocompression bonding sheet T. The thermocompression bonding sheet T is thermocompression bonded to the wafer W and the frame F by pushing it upward and rotating in the direction indicated by the arrow R1 while moving in the direction indicated by the arrow R2. The predetermined temperature is a temperature at which the thermocompression bonding sheet T exhibits adhesive force, and is set near the melting temperature of the polyolefin-based resin (polyethylene in this embodiment) constituting the thermocompression bonding sheet T.
若將熱壓接薄片T熱壓接於晶圓W與框架F，則如圖3（c）所示，將切割手段37的切割刀片38定位於框架F上。接著，一邊使切割刀片38往箭頭R3所示之方向旋轉並使卡盤台32往箭頭R4所示之方向旋轉，一邊沿著沿框架F之切斷線L1環狀地切斷熱壓接薄片T，去除外周側的剩餘區域。將去除該剩餘區域並藉由熱壓接薄片T而將框架F與晶圓W成為一體且反轉之狀態表示於圖3（c）的下方。如此進行，透過熱壓接薄片T而與框架F成為一體之多片晶圓W被容納於卡匣39，所述卡匣39在上下方向具備如圖示般的多個容納槽。When the thermocompression bonding sheet T is thermocompression bonded to the wafer W and the frame F, the cutting blade 38 of the cutting means 37 is positioned on the frame F as shown in FIG. 3(c) . Next, while rotating the cutting blade 38 in the direction indicated by arrow R3 and rotating the chuck table 32 in the direction indicated by arrow R4, the thermocompression-bonded sheet is annularly cut along the cutting line L1 along the frame F. T, remove the remaining area on the peripheral side. The lower part of FIG. 3( c ) shows a state in which the remaining area is removed and the sheet T is thermocompression-bonded, so that the frame F and the wafer W are integrated and inverted. In this manner, the plurality of wafers W integrated with the frame F through the thermocompression bonding of the sheets T are accommodated in the cassette 39 having a plurality of accommodating grooves in the up and down direction as shown in the figure.
如上述，藉由熱壓接薄片T而與框架F成為一體之多片晶圓W係藉由上述的卡匣39而被搬送至圖4所示之切割裝置40（僅表示一部分）。如上述，本實施方式的熱壓接薄片T係在聚烯烴系樹脂中加熱混合彎曲強度為60～160Mpa的樹脂而構成，因此成為發揮黏著力且具有剛度之薄片，即使容納於圖3（c）所示之卡匣39而進行搬送且時間經過，容納於卡匣39之上方的晶圓W不會透過熱壓接薄片T下垂至與下方的晶圓W接觸之位置為止，亦不會在從卡匣39抽出晶圓W時等產生障礙，再者，在該晶圓W被分割成元件晶片之際亦不會產生黏著層殘留而元件晶片的品質降低之問題。As described above, the plurality of wafers W integrated with the frame F by thermocompression bonding the sheets T are transported to the dicing device 40 shown in FIG. 4 (only a part is shown) via the cassette 39 described above. As described above, the thermocompression-bonded sheet T of this embodiment is composed of a polyolefin-based resin heated and mixed with a resin having a bending strength of 60 to 160 MPa. Therefore, it becomes a sheet that exerts adhesive force and has rigidity even if it is housed in Figure 3(c) ) shown in the cassette 39 and when time passes, the wafer W accommodated in the upper part of the cassette 39 will not droop through the thermocompression bonding sheet T until it contacts the lower wafer W, nor will it be in contact with the lower wafer W. There will be no trouble when extracting the wafer W from the cassette 39 , and when the wafer W is divided into component wafers, there will be no problem that the adhesive layer remains and the quality of the component wafers is reduced.
切割裝置40具備吸引保持晶圓W之卡盤台（圖示省略）與切割被吸引保持於該卡盤台之晶圓W之切割手段42。該卡盤台係被構成為旋轉自如，且具備將該卡盤台往圖中箭頭X所示之方向進行加工進給之移動手段（圖示省略）。並且，切割手段42具備：主軸45，其配設於圖中箭頭Y所示之Y軸方向且被保持於主軸外殼43；環狀的切割刀片46，其被保持於主軸45的前端，且被刀片蓋44覆蓋；切割水噴嘴47，其在藉由切割刀片46實施切割加工之際供給切割水；以及Y軸移動手段（圖示省略），其將切割刀片46在Y軸方向進行分度進給。主軸45係藉由省略圖示之主軸馬達而旋轉驅動。The cutting device 40 includes a chuck table (not shown) that suctions and holds the wafer W, and a cutting means 42 that cuts the wafer W that is suctioned and held by the chuck table. The chuck table is configured to be rotatable and has a moving means (not shown) for processing and feeding the chuck table in the direction indicated by the arrow X in the figure. Furthermore, the cutting means 42 is provided with: a main shaft 45 arranged in the Y-axis direction indicated by arrow Y in the figure and held by the main shaft housing 43; and an annular cutting blade 46 held at the front end of the main shaft 45 and held by the main shaft 45. The blade cover 44 covers; a cutting water nozzle 47 that supplies cutting water when the cutting blade 46 performs cutting processing; and a Y-axis moving means (not shown) that indexes the cutting blade 46 in the Y-axis direction. give. The spindle 45 is rotationally driven by a spindle motor (not shown).
在實施藉由切割裝置40所進行之切割加工之際，首先，將與框架F一起從上述的卡匣39搬出之晶圓W的正面Wa朝向上方，而載置於切割裝置40的該卡盤台並進行吸引保持，藉由省略圖示之對準手段而使晶圓W的預定的分割預定線與X軸方向一致，且實施與切割刀片46的對位。接著，將高速旋轉之切割刀片46定位於與X軸方向一致之分割預定線，從正面Wa側切入，將該卡盤台在X軸方向進行加工進給而形成切割槽100。再者，運作該Y軸移動手段，將切割手段42的切割刀片46分度進給至在Y軸方向與已形成切割槽100之分割預定線相鄰之未加工的分割預定線上，與上述同樣地進行而形成切割槽100。藉由重覆此等加工，而沿著沿X軸方向之全部的分割預定線形成切割槽100。接著，將卡盤台旋轉90度，使與先前已形成切割槽100之方向正交之方向與X軸方向一致，對重新與X軸方向一致之全部的分割預定線實施上述之切割加工，沿著形成於晶圓W之全部的分割預定線形成切割槽100。如此進行，若實施對晶圓W之切割加工，則使用省略圖示之搬送手段搬送至省略圖示之清洗裝置，實施該清洗裝置所進行之清洗、乾燥。若完成該清洗、乾燥，則將晶圓W容納於上述之卡匣39中容納該晶圓W之位置。在將切割加工後的晶圓W容納於卡匣39之際，晶圓W不會透過熱壓接薄片T而下垂至下方，亦不會產生在將晶圓W返回卡匣39時產生障礙之問題。When performing the dicing process by the dicing device 40, first, the wafer W carried out from the above-mentioned cassette 39 together with the frame F is placed on the chuck of the dicing device 40 with the front surface Wa facing upward. The stage is suctioned and held, and the planned division line of the wafer W is aligned with the X-axis direction by an alignment means (not shown), and the alignment with the dicing blade 46 is performed. Next, the high-speed rotating cutting blade 46 is positioned on the planned dividing line aligned with the X-axis direction, cuts from the front Wa side, and processes the chuck table in the X-axis direction to form the cutting groove 100 . Furthermore, the Y-axis moving means is operated to index and feed the cutting blade 46 of the cutting means 42 to the unprocessed planned dividing line adjacent to the planned dividing line where the cutting groove 100 has been formed in the Y-axis direction, in the same manner as above. The cutting groove 100 is formed. By repeating these processes, the cutting groove 100 is formed along all the planned dividing lines along the X-axis direction. Next, the chuck table is rotated 90 degrees so that the direction orthogonal to the direction in which the cutting groove 100 has been previously formed is consistent with the X-axis direction, and the above-mentioned cutting process is performed on all the planned division lines that are again consistent with the X-axis direction, along the The dicing grooves 100 are formed along all the planned division lines formed on the wafer W. In this manner, when the wafer W is diced, the wafer W is transported to a cleaning device (not shown) using a transporting means (not shown), and then the cleaning and drying performed by the cleaning device are performed. After the cleaning and drying are completed, the wafer W is accommodated in the above-mentioned cassette 39 at the position where the wafer W is accommodated. When the wafer W after cutting is accommodated in the cassette 39, the wafer W will not hang down due to the thermal compression bonding sheet T, and there will be no obstruction when returning the wafer W to the cassette 39. problem.
在上述之實施方式中，雖表示使用基於本實施方式構成之熱壓接薄片T並藉由在中央具備容納晶圓W之開口之環狀的框架F而支撐晶圓W成為一體，且對晶圓W實施切割加工之例，但使用本實施方式的熱壓接薄片T的方式並不受限於此。例如，亦可將圖2（b）所示之熱壓接薄片T使用作為研削晶圓W之際之保護膠膜。針對將熱壓接薄片T使用於研削加工之實施方式，一邊參照圖5、圖6，一邊在以下說明。In the above-mentioned embodiment, it is shown that the thermocompression bonding sheet T constructed based on this embodiment is used and the annular frame F having an opening for accommodating the wafer W in the center is used to support the wafer W as a whole and to support the wafer W. Although the circle W is cut into an example, the method of using the thermocompression bonding sheet T of this embodiment is not limited to this. For example, the thermocompression bonding sheet T shown in FIG. 2(b) can also be used as a protective adhesive film when grinding the wafer W. An embodiment in which the thermocompression-bonded sheet T is used for grinding processing will be described below with reference to FIGS. 5 and 6 .
在使用從圖2（b）所示之薄片基材S得到之熱壓接薄片T之際，將晶圓W搬送至圖5所示之熱壓接裝置50（僅表示一部分）。熱壓接裝置50具備卡盤台52。卡盤台52具備：圓板形狀的吸附卡盤53，其係以具有通氣性之多孔材所形成；以及框體54，其圍繞該吸附卡盤53，且將來自省略圖示之吸引手段的負壓傳遞至吸附卡盤53的保持面。When using the thermocompression bonding sheet T obtained from the sheet base material S shown in FIG. 2( b ), the wafer W is transferred to the thermocompression bonding device 50 shown in FIG. 5 (only a part of it is shown). The thermocompression bonding device 50 includes a chuck table 52 . The chuck table 52 is provided with: a disc-shaped adsorption chuck 53 formed of a breathable porous material; and a frame 54 surrounding the adsorption chuck 53 and absorbing the adsorption means from the not shown. The negative pressure is transmitted to the holding surface of the suction chuck 53 .
將正面Wa側朝向上方，而將被搬送至熱壓接裝置50之晶圓W載置於卡盤台52的吸附卡盤53的中央。晶圓W為在藉由分割預定線所劃分之正面Wa形成有多個元件D之晶圓W。接著，如圖5（a）所示，從卡盤台52的上方鋪設本實施方式的熱壓接薄片T。如圖5（b）所示，熱壓接薄片T係以大於吸附卡盤53且稍微小於框體54的尺寸形成。若將熱壓接薄片T鋪設於卡盤台52上，則運作省略圖示之吸引手段而吸引熱壓接薄片T，使其與晶圓W的正面Wa密接。接著，將加熱輥55定位於熱壓接薄片T的上方。加熱輥55在內部具備省略圖示之加熱器與溫度感測器，可將加熱輥55升溫至預期的溫度。並且，在加熱輥55的表面塗布有氟樹脂，使熱壓接薄片T即使發揮黏著力亦不會黏著於該表面。The wafer W transported to the thermocompression bonding device 50 is placed in the center of the suction chuck 53 of the chuck table 52 with the front side Wa facing upward. The wafer W is a wafer W in which a plurality of devices D are formed on a front surface Wa divided by a planned division line. Next, as shown in FIG. 5( a ), the thermocompression-bonded sheet T of this embodiment is laid from above the chuck table 52 . As shown in FIG. 5( b ), the thermocompression bonding sheet T is formed to be larger than the suction chuck 53 and slightly smaller than the frame 54 . When the thermocompression bonding sheet T is laid on the chuck table 52, a suction means (not shown) is operated to attract the thermocompression bonding sheet T so that it is in close contact with the front surface Wa of the wafer W. Next, the heating roller 55 is positioned above the thermocompression bonding sheet T. The heating roller 55 is equipped with a heater and a temperature sensor (not shown) inside, which can heat the heating roller 55 to a desired temperature. Furthermore, the surface of the heating roller 55 is coated with fluororesin so that the thermocompression bonding sheet T will not stick to the surface even if it exerts adhesive force.
若將加熱輥55定位於熱壓接薄片T上，則運作加熱輥55的該加熱器，將加熱輥55的表面加熱至預定的溫度（例如120～140℃），從熱壓接薄片T的上方進行推壓，使其一邊往箭頭R5所示之方向旋轉，一邊往箭頭R6所示之方向移動，將熱壓接薄片T熱壓接於晶圓W的正面Wa。該預定的溫度為熱壓接薄片T發揮黏著力之溫度，且被設定於構成熱壓接薄片T之聚烯烴系樹脂（在本實施方式中為聚乙烯）的熔融溫度附近。When the heating roller 55 is positioned on the thermocompression bonding sheet T, the heater of the heating roller 55 is operated to heat the surface of the heating roller 55 to a predetermined temperature (for example, 120 to 140°C). The thermocompression bonding sheet T is thermocompression bonded to the front surface Wa of the wafer W by pushing it upward and rotating in the direction indicated by the arrow R5 while moving in the direction indicated by the arrow R6. The predetermined temperature is a temperature at which the thermocompression bonding sheet T exhibits adhesive force, and is set near the melting temperature of the polyolefin-based resin (polyethylene in this embodiment) constituting the thermocompression bonding sheet T.
若將熱壓接薄片T熱壓接於晶圓W，則如圖5（c）所示，將切割手段56定位於晶圓W的外緣。接著，一邊使切割手段56的切割刀片57往箭頭R7所示之方向旋轉，一邊沿著沿晶圓W的外緣之切斷線L2將熱壓接薄片T切斷成圓形，去除外周側的剩餘區域。將藉由去除熱壓接薄片T的外周側的剩餘區域而將熱壓接薄片T與晶圓W成為一體之狀態表示於圖5（c）的右下方。如此，若將晶圓W與熱壓接薄片T成為一體，則搬送至圖6所示之研削裝置60（僅表示一部分）。When the thermocompression bonding sheet T is thermocompression bonded to the wafer W, the cutting means 56 is positioned at the outer edge of the wafer W as shown in FIG. 5(c) . Next, while rotating the cutting blade 57 of the cutting means 56 in the direction shown by the arrow R7, the thermocompression bonded sheet T is cut into a circle along the cutting line L2 along the outer edge of the wafer W, and the outer peripheral side is removed the remaining area. The state in which the thermocompression bonding sheet T and the wafer W are integrated by removing the remaining area on the outer peripheral side of the thermocompression bonding sheet T is shown in the lower right corner of FIG. 5( c ). In this way, when the wafer W and the thermocompression-bonded sheet T are integrated, they are transferred to the grinding device 60 shown in FIG. 6 (only a part is shown).
如圖6（a）所示，研削裝置60具備卡盤台61，卡盤台61具備：圓板形狀的吸附卡盤62，其係以具有通氣性之多孔材所形成；以及框體63，其圍繞該吸附卡盤62，且將從省略圖示之吸引手段的負壓傳遞至吸附卡盤62的保持面。將晶圓W的背面Wb側朝向上方並將熱壓接薄片T側朝向下方，而將被搬送至研削裝置60之晶圓W載置於卡盤台61的吸附卡盤62，運作該吸引手段而進行吸引保持。As shown in Fig. 6(a) , the grinding device 60 is provided with a chuck table 61. The chuck table 61 is provided with: a disk-shaped adsorption chuck 62 formed of a porous material with air permeability; and a frame 63. It surrounds the suction chuck 62 and transmits the negative pressure from the suction means (not shown) to the holding surface of the suction chuck 62 . With the back surface Wb side of the wafer W facing upward and the thermocompression bonding sheet T side facing downward, the wafer W transported to the grinding device 60 is placed on the suction chuck 62 of the chuck table 61 and the suction means is operated. And attract and hold.
接著，運作省略圖示之移動手段，如圖6（b）所示，將卡盤台61定位於研削手段64的正下方的加工區域。研削手段64具備：旋轉主軸65，其藉由未圖示之旋轉驅動機構而旋轉；輪安裝件66，其裝設於旋轉主軸65的下端；以及研削輪67，其安裝於輪安裝件66的下表面，並且，在研削輪67的下表面環狀地配設有多個研削磨石68。Next, the moving means (not shown) is operated, and as shown in FIG. 6( b ), the chuck table 61 is positioned in the processing area directly below the grinding means 64 . The grinding means 64 includes: a rotating spindle 65 that is rotated by a rotational drive mechanism (not shown); a wheel mounting 66 that is mounted on the lower end of the rotating spindle 65; and a grinding wheel 67 that is mounted on the wheel mounting 66. A plurality of grinding stones 68 are annularly arranged on the lower surface of the grinding wheel 67 .
若將被吸引保持於卡盤台61之晶圓W定位於研削手段64的正下方，則使研削手段64的旋轉主軸65一邊例如以6000rpm往圖6（b）中箭頭R9所示之方向旋轉，一邊使卡盤台61例如以300rpm往箭頭R10所示之方向旋轉。然後，一邊藉由未圖示之研削水供給手段而將研削水供給至晶圓W的背面Wb上，一邊運作省略圖示之研削進給手段運作，而使研削手段64往圖中箭頭R11所示之方向下降，使研削磨石68與晶圓W的背面Wb接觸，將研削手段64以例如1µm／秒的研削進給速度進行研削進給。此時，可一邊藉由未圖示之接觸式的測量量規而測量晶圓W的厚度一邊進行研削，將晶圓W的背面Wb研削預定量，使晶圓W成為預定的厚度。若完成預定量的研削，則停止研削手段64，經過清洗、乾燥步驟等而完成研削晶圓W的背面Wb之背面研削加工。When the wafer W attracted and held by the chuck table 61 is positioned directly below the grinding means 64, one side of the rotating spindle 65 of the grinding means 64 is rotated in the direction indicated by the arrow R9 in FIG. 6(b) at, for example, 6000 rpm. , while rotating the chuck table 61 in the direction indicated by arrow R10 at, for example, 300 rpm. Then, while supplying the grinding water to the back surface Wb of the wafer W by the grinding water supply means (not shown), the grinding feed means (not shown) is operated, so that the grinding means 64 is moved toward the arrow R11 in the figure. The grinding grindstone 68 is lowered in the indicated direction, and the grinding grindstone 68 is brought into contact with the back surface Wb of the wafer W, and the grinding means 64 is grinded and fed at a grinding feed speed of, for example, 1 μm/second. At this time, grinding can be performed while measuring the thickness of the wafer W with a contact type measuring gauge (not shown), and the back surface Wb of the wafer W can be grinded by a predetermined amount so that the wafer W has a predetermined thickness. When the predetermined amount of grinding is completed, the grinding means 64 is stopped, and the back surface grinding process of grinding the back surface Wb of the wafer W is completed through cleaning and drying steps.
若完成上述之背面研削加工，則藉由省略圖示之搬送手段吸附晶圓W，搬送至下一步驟，或者容納於省略圖示之卡匣等。此時，由於在晶圓W的正面Wa黏貼有本實施方式的熱壓接薄片T，該熱壓接薄片T成為在聚烯烴系樹脂中加熱混合彎曲強度為60～160Mpa的樹脂而構成之具有剛度的薄片，因此即使是經薄化之晶圓W亦能穩定地被支撐而搬送，且在被分割成元件晶片之際黏著層亦不殘留，不會產生品質降低之問題。After the above-mentioned backside grinding process is completed, the wafer W is sucked by a conveying means (not shown) and transported to the next step, or stored in a cassette (not shown). At this time, since the thermocompression bonding sheet T of this embodiment is adhered to the front surface Wa of the wafer W, the thermocompression bonding sheet T is composed of polyolefin resin and a resin having a bending strength of 60 to 160 MPa, which is heated and mixed. Because of the stiffness of the sheet, even thinned wafers W can be stably supported and transported, and the adhesive layer does not remain when being divided into component wafers, so there is no problem of quality degradation.
1,2:供給容器 10:原料製造裝置 11:混合容器 12:加熱手段 20:薄片製造裝置 21:原料投入槽 22:第一輥 23:第二輥 24:第三輥 25:第四輥 26:延伸機 27:捲收輥 30:熱壓接裝置 32:卡盤台 36:加熱輥 37:切割手段 38:切割刀片 39:卡匣 40:切割裝置 42:切割手段 43:主軸外殼 44:刀片蓋 45:主軸 46:切割刀片 47:切割水噴嘴 50:熱壓接裝置 52:卡盤台 55:加熱輥 56:切割手段 57:切割刀片 60:研削裝置 61:卡盤台 64:研削手段 65:旋轉主軸 66:輪安裝件 67:研削輪 68:研削磨石 100:切割槽 P:原料 P1:第一原料 P2:第二原料 S:薄片基材 1,2: Supply container 10: Raw material manufacturing equipment 11: Mixing container 12:Heating means 20:Sheet manufacturing device 21: Raw material input chute 22:First roller 23:Second roller 24:Third roller 25:Fourth roller 26:Extension machine 27:Take-up roller 30:Thermocompression bonding device 32:Chuck table 36:Heating roller 37: Cutting means 38:Cutting blade 39:cassette 40: Cutting device 42: Cutting means 43:Spindle housing 44:Blade cover 45:Spindle 46:Cutting blade 47: Cutting water nozzle 50:Thermocompression bonding device 52:Chuck table 55:Heating roller 56: Cutting means 57:Cutting blade 60:Grinding device 61:Chuck table 64:Grinding means 65: Rotating spindle 66: Wheel mounting parts 67:Grinding wheel 68:Grinding stone 100: cutting groove P: raw materials P1: First raw material P2: Second raw material S: sheet base material
圖1係表示本實施方式的製造熱壓接薄片的原料之態樣之概念圖。 圖2（a）係表示使用藉由圖1所示之原料製造步驟製造之原料而製造薄片基材之態樣之概念圖，圖2（b）係表示從該薄片基材形成熱壓接薄片之態樣之立體圖。 圖3係表示將圖2所示之熱壓接薄片熱壓接於晶圓及框架之態樣之立體圖。 圖4係表示切割被支撐於框架之晶圓之態樣之立體圖。 圖5係表示將圖2所示之熱壓接薄片熱壓接於晶圓之另一態樣之立體圖。 圖6係表示將藉由圖5所示之態樣而黏貼有熱壓接薄片之晶圓的背面進行研削之態樣之立體圖。 FIG. 1 is a conceptual diagram showing an aspect of raw materials for manufacturing a thermocompression bonding sheet according to this embodiment. FIG. 2( a ) is a conceptual diagram showing a state in which a sheet base material is manufactured using the raw material produced by the raw material manufacturing step shown in FIG. 1 , and FIG. 2( b ) shows a thermocompression-bonded sheet formed from the sheet base material. A three-dimensional view of the shape. FIG. 3 is a perspective view showing a state in which the thermocompression bonding sheet shown in FIG. 2 is thermocompression bonded to a wafer and a frame. FIG. 4 is a perspective view showing a state of cutting a wafer supported on a frame. FIG. 5 is a perspective view showing another aspect of thermocompression bonding the thermocompression bonding sheet shown in FIG. 2 to a wafer. FIG. 6 is a perspective view showing a state in which the back surface of the wafer to which the thermocompression bonding sheet is adhered in the aspect shown in FIG. 5 is ground.
1,2:供給容器 1,2: Supply container
10:原料製造裝置 10: Raw material manufacturing equipment
11:混合容器 11: Mixing container
12:加熱手段 12:Heating means
P:原料 P: raw materials
P1:第一原料 P1: First raw material
P2:第二原料 P2: Second raw material
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|---|---|---|---|
| JP2022-026517 | 2022-02-24 | ||
| JP2022026517A JP2023122799A (en) | 2022-02-24 | 2022-02-24 | Thermocompression bonding sheet |
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| Publication Number | Publication Date |
|---|---|
| TW202334362A true TW202334362A (en) | 2023-09-01 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW112106202A TW202334362A (en) | 2022-02-24 | 2023-02-21 | Thermocompression bonding sheet made of polyolefin-based resin and being capable of supporting a wafer with sufficient rigidity |
Country Status (4)
| Country | Link |
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| JP (1) | JP2023122799A (en) |
| KR (1) | KR20230127151A (en) |
| CN (1) | CN116640371A (en) |
| TW (1) | TW202334362A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2019186488A (en) | 2018-04-16 | 2019-10-24 | 株式会社ディスコ | Wafer processing method |
| JP7281873B2 (en) | 2018-05-14 | 2023-05-26 | 株式会社ディスコ | Wafer processing method |
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2022
- 2022-02-24 JP JP2022026517A patent/JP2023122799A/en active Pending
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2023
- 2023-02-14 KR KR1020230019064A patent/KR20230127151A/en unknown
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| CN116640371A (en) | 2023-08-25 |
| KR20230127151A (en) | 2023-08-31 |
| JP2023122799A (en) | 2023-09-05 |
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