CN110828637A - 发光二极管封装件及具备发光二极管封装件的显示装置 - Google Patents

发光二极管封装件及具备发光二极管封装件的显示装置 Download PDF

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Publication number
CN110828637A
CN110828637A CN201910728600.2A CN201910728600A CN110828637A CN 110828637 A CN110828637 A CN 110828637A CN 201910728600 A CN201910728600 A CN 201910728600A CN 110828637 A CN110828637 A CN 110828637A
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China
Prior art keywords
emitting diode
light emitting
wavelength conversion
light
diode chip
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Pending
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CN201910728600.2A
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English (en)
Chinese (zh)
Inventor
金恩柱
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Seoul Semiconductor Co Ltd
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Seoul Semiconductor Co Ltd
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Application filed by Seoul Semiconductor Co Ltd filed Critical Seoul Semiconductor Co Ltd
Priority to CN201910749687.1A priority Critical patent/CN110828638A/zh
Publication of CN110828637A publication Critical patent/CN110828637A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
CN201910728600.2A 2018-08-14 2019-08-08 发光二极管封装件及具备发光二极管封装件的显示装置 Pending CN110828637A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201910749687.1A CN110828638A (zh) 2018-08-14 2019-08-08 发光二极管封装件及具备发光二极管封装件的显示装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2018-0095132 2018-08-14
KR1020180095132A KR20200019514A (ko) 2018-08-14 2018-08-14 발광 다이오드 패키지 및 발광 다이오드 패키지를 포함하는 디스플레이 장치

Related Child Applications (1)

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CN201910749687.1A Division CN110828638A (zh) 2018-08-14 2019-08-08 发光二极管封装件及具备发光二极管封装件的显示装置

Publications (1)

Publication Number Publication Date
CN110828637A true CN110828637A (zh) 2020-02-21

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CN201910749687.1A Pending CN110828638A (zh) 2018-08-14 2019-08-08 发光二极管封装件及具备发光二极管封装件的显示装置
CN201910728600.2A Pending CN110828637A (zh) 2018-08-14 2019-08-08 发光二极管封装件及具备发光二极管封装件的显示装置

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CN201910749687.1A Pending CN110828638A (zh) 2018-08-14 2019-08-08 发光二极管封装件及具备发光二极管封装件的显示装置

Country Status (3)

Country Link
KR (1) KR20200019514A (ko)
CN (2) CN110828638A (ko)
WO (1) WO2020036320A1 (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7414162B2 (ja) * 2021-02-12 2024-01-16 味の素株式会社 発光素子パッケージ及びその製造方法
CN113659058B (zh) * 2021-08-20 2023-10-20 京东方科技集团股份有限公司 一种发光器件及其制备方法、显示装置

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080062259A (ko) * 2006-12-29 2008-07-03 엘지디스플레이 주식회사 광원소자, 그 제조방법, 이를 구비한 백라이트 유닛 및액정표시장치
US20110127558A1 (en) * 2009-11-27 2011-06-02 Young Sam Park Light emitting diode package and method of manufacturing the same
CN102749757A (zh) * 2011-04-18 2012-10-24 友达光电股份有限公司 防漏光显示装置及其背光模组
KR20130121204A (ko) * 2012-04-25 2013-11-06 엘지디스플레이 주식회사 엘이디 패키지 및 이를 이용한 액정표시장치
KR20140089765A (ko) * 2013-01-07 2014-07-16 엘지이노텍 주식회사 발광 소자 패키지
CN205723605U (zh) * 2016-03-31 2016-11-23 首尔半导体股份有限公司 发光元件、包括其的发光模块、背光单元及显示装置
KR20170064898A (ko) * 2015-12-02 2017-06-12 엘지이노텍 주식회사 발광 소자 패키지
CN107039572A (zh) * 2016-02-03 2017-08-11 行家光电股份有限公司 具非对称性光形的发光装置及其制造方法
CN107316930A (zh) * 2016-04-25 2017-11-03 三星电子株式会社 半导体发光器件
KR20170139942A (ko) * 2016-06-10 2017-12-20 서울반도체 주식회사 발광 다이오드 패키지 및 그의 제조 방법
CN108206235A (zh) * 2016-12-16 2018-06-26 三星电子株式会社 半导体发光装置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2207993A4 (en) * 2007-11-08 2013-09-04 Innovations In Optics Inc LED LIGHTING SYSTEM
EP2347170A4 (en) * 2008-11-06 2017-12-27 Innovations in Optics, Inc. Light emitting diode emergency lighting module
KR102516693B1 (ko) * 2016-04-29 2023-03-31 엘지디스플레이 주식회사 Led 패키지 모듈 및 이를 갖는 디스플레이 장치

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080062259A (ko) * 2006-12-29 2008-07-03 엘지디스플레이 주식회사 광원소자, 그 제조방법, 이를 구비한 백라이트 유닛 및액정표시장치
US20110127558A1 (en) * 2009-11-27 2011-06-02 Young Sam Park Light emitting diode package and method of manufacturing the same
CN102749757A (zh) * 2011-04-18 2012-10-24 友达光电股份有限公司 防漏光显示装置及其背光模组
KR20130121204A (ko) * 2012-04-25 2013-11-06 엘지디스플레이 주식회사 엘이디 패키지 및 이를 이용한 액정표시장치
KR20140089765A (ko) * 2013-01-07 2014-07-16 엘지이노텍 주식회사 발광 소자 패키지
KR20170064898A (ko) * 2015-12-02 2017-06-12 엘지이노텍 주식회사 발광 소자 패키지
CN107039572A (zh) * 2016-02-03 2017-08-11 行家光电股份有限公司 具非对称性光形的发光装置及其制造方法
CN205723605U (zh) * 2016-03-31 2016-11-23 首尔半导体股份有限公司 发光元件、包括其的发光模块、背光单元及显示装置
CN107316930A (zh) * 2016-04-25 2017-11-03 三星电子株式会社 半导体发光器件
KR20170139942A (ko) * 2016-06-10 2017-12-20 서울반도체 주식회사 발광 다이오드 패키지 및 그의 제조 방법
CN108206235A (zh) * 2016-12-16 2018-06-26 三星电子株式会社 半导体发光装置

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CN110828638A (zh) 2020-02-21
WO2020036320A1 (ko) 2020-02-20

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