CN110828637A - Light emitting diode package and display device having the same - Google Patents
Light emitting diode package and display device having the same Download PDFInfo
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- CN110828637A CN110828637A CN201910728600.2A CN201910728600A CN110828637A CN 110828637 A CN110828637 A CN 110828637A CN 201910728600 A CN201910728600 A CN 201910728600A CN 110828637 A CN110828637 A CN 110828637A
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- emitting diode
- light emitting
- wavelength conversion
- light
- diode chip
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- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
Abstract
The present invention relates to a light emitting diode package and a display device including the same. The light emitting diode package of the embodiment of the present invention includes: at least one light emitting diode chip emitting light; the wavelength conversion component is arranged above the light emitting diode chip, and the flat surface of the wavelength conversion component is of a regular quadrilateral structure; an adhesive member sandwiched between the light emitting diode chip and the wavelength conversion member; and a molding member surrounding the light emitting diode chip, the bonding member, and the wavelength conversion member. Wherein the molding member exposes a top surface of the wavelength conversion member and both side surfaces of the wavelength conversion member in the longitudinal direction. In addition, the top surface of the molding member, which exposes both side surfaces of the wavelength converting member, is higher than the top surface of the light emitting diode chip.
Description
Technical Field
The present invention relates to a light emitting diode package and a display device including the same.
Background
A display device which is a light-receiving device without a self-light-emitting source needs a separate light source device capable of illuminating the entire screen on the back side. Such an illumination device for a display device is generally called a backlight Unit (Back Light Unit).
The backlight unit includes a plurality of light emitting diode packages and a light guide plate converting point light emitted from the light emitting diode packages into surface light.
The conventional light emitting diode package has a light emitting surface on only one side for emitting light. At this time, when a plurality of light emitting diode packages are arranged, a portion of the incident area of the light guide plate is darker than other portions due to a space between adjacent light emitting diode packages. This causes a display device to generate a mottling phenomenon.
In general, the backlight unit is classified into a direct type and an edge type according to an arrangement manner of a light source arrangement that emits light together with the light emitting diode package.
The direct type backlight unit is a system in which light sources are arranged below a light guide plate to illuminate the front surface of a display panel.
The edge type backlight unit is a manner of arranging a light source at a side of a light guide plate guiding light.
However, the display device to which the edge type backlight unit is applied is such that the light source is disposed along the side of the light guide plate, and thus has a limitation in thinning the bezel thickness.
In addition, the display device requires an area for mixing light emitted from the plurality of light sources so that light uniformity of the light guide plate is above a certain level. At this time, if the frame is thin, a region where the mixed light is not uniform to a certain level or more is exposed to the outside, and thus the image is mottled. In order to prevent the image from being exposed to spots, the display device has a frame covering a region with low light uniformity, and thus the frame has a large thickness. Therefore, the display device has a problem of increasing in size or reducing in screen area.
Disclosure of Invention
The present invention is directed to a light emitting diode package with an improved light directing angle.
Another object of the present invention is to provide a display device capable of reducing the thickness of a frame region.
According to an embodiment of the present invention, there is provided a light emitting diode package including: at least one light emitting diode chip emitting light; the wavelength conversion component is arranged above the light emitting diode chip, and the flat surface of the wavelength conversion component is of a regular quadrilateral structure; an adhesive member sandwiched between the light emitting diode chip and the wavelength conversion member; and a molding member surrounding the light emitting diode chip, the bonding member, and the wavelength conversion member. Wherein the molding member exposes a top surface of the wavelength conversion member and both side surfaces of the wavelength conversion member in the longitudinal direction. In addition, the top surface of the molding member, which exposes both side surfaces of the wavelength converting member, is higher than the top surface of the light emitting diode chip.
According to another embodiment of the present invention, there is provided a display device including: a circuit board; a plurality of light emitting diode packages which are packaged on the circuit board to emit light; a light guide plate having an incident surface on which light of the light emitting diode package is incident; and a light shielding member covering the light emitting diode package and the incident surface of the light guide plate. Wherein the light emitting diode package includes: at least one light emitting diode chip emitting light; the wavelength conversion component is arranged above the light emitting diode chip, and the flat surface of the wavelength conversion component is of a regular quadrilateral structure; an adhesive member sandwiched between the light emitting diode chip and the wavelength conversion member; and a molding member surrounding the light emitting diode chip, the bonding member, and the wavelength conversion member. The molding member exposes a top surface of the wavelength conversion member and both side surfaces of the wavelength conversion member in the longitudinal direction. The top surface of the molding member, which exposes both side surfaces of the wavelength converting member, is higher than the top surface of the light emitting diode chip. In addition, the thickness of the frame region provided with the circuit board, the light emitting diode package and the light blocking member in the display device is 2mm or less.
According to the embodiments of the present invention, the light emitting diode package emits light not only through the top surface but also through a portion of both side surfaces in the long axis direction, so that the light pointing angle can be improved. Therefore, when the plurality of light emitting diode packages are arranged in line in the long axis direction, the distance of the light mixing position between the light emitting diode packages adjacent to each other can be shortened. Therefore, the thickness of the frame region can be further reduced by applying the light emitting diode package of the embodiment of the present invention to the display device.
Drawings
Fig. 1 to 4 are explanatory views showing a light emitting diode package according to a first embodiment of the present invention.
Fig. 5 is a perspective view illustrating a conventional light emitting diode package.
Fig. 6 is a graph illustrating a light directive angle of a conventional light emitting diode package.
Fig. 7 is a graph illustrating a light pointing angle of the light emitting diode package according to the first embodiment of the present invention.
Fig. 8 to 12 are explanatory views illustrating a method of manufacturing a light emitting diode package according to a first embodiment of the present invention.
Fig. 13 and 14 are explanatory views showing a light emitting diode package according to a second embodiment of the present invention.
Fig. 15 is an explanatory view showing a light emitting diode package of a third embodiment of the present invention.
Fig. 16 is an explanatory view showing a light emitting diode package of a fourth embodiment of the present invention.
Fig. 17 is an explanatory view showing a light emitting diode package of a fifth embodiment of the present invention.
Fig. 18 and 19 are exemplary views illustrating light distribution of the light emitting diode package to the incident area of the light guide plate according to the embodiment of the present invention.
Fig. 20 and 21 are explanatory views showing a display device to which a light emitting diode package according to an embodiment of the present invention is applied.
Fig. 22 to 30 are explanatory views showing a light emitting diode package and a method of manufacturing the same according to a sixth embodiment of the present invention.
Fig. 31 to 37 are explanatory views showing a light emitting diode package and a method of manufacturing the same according to a seventh embodiment of the present invention.
Fig. 38 to 44 are views relating to a light emitting diode package and a method of manufacturing the same according to an eighth embodiment of the present invention.
Fig. 45 to 50 are views relating to a light emitting diode package and a method of manufacturing the same according to a ninth embodiment of the present invention.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The embodiments described below are examples provided to fully convey the concept of the present invention to those skilled in the art. Therefore, the present invention is not limited to the embodiments described below, and may be embodied in other forms. In the drawings, the widths, lengths, thicknesses, and the like of constituent elements are exaggerated in some cases for convenience of explanation. Throughout the specification, the same reference numerals denote the same constituent elements, and like reference numerals denote the corresponding similar constituent elements.
The light emitting diode package of the embodiment of the present invention includes: at least one light emitting diode chip emitting light; the wavelength conversion component is arranged above the light emitting diode chip, and the flat surface of the wavelength conversion component is of a regular quadrilateral structure; an adhesive member sandwiched between the light emitting diode chip and the wavelength conversion member; and a molding member surrounding the light emitting diode chip, the bonding member, and the wavelength conversion member. Wherein the molding member exposes a top surface of the wavelength conversion member and both side surfaces of the wavelength conversion member in a long axis direction. In addition, the top surface of the molding member, which exposes both side surfaces of the wavelength converting member, is higher than the top surface of the light emitting diode chip.
The LED chip is provided with an electrode pad below.
According to an embodiment, the electrode pads of the light emitting diode chip may be exposed to the outside at the bottom surface of the molding part.
According to another embodiment, the light emitting diode package further comprises a lead frame disposed below the light emitting diode chip. At this time, a portion of the lead frame is connected to the electrode pad of the light emitting diode chip, and another portion of the lead frame protrudes outside the molding member.
According to another embodiment, the light emitting diode package may further include a sub adhesive substrate disposed under the molding member, the sub adhesive substrate including a main body portion and a lead frame formed on the main body portion. At this time, in the light emitting diode package, a portion of the lead frame is connected to the electrode pad of the light emitting diode chip.
The area of the flat surface of the wavelength conversion member is larger than the area of the flat surface of the light emitting diode chip.
The light emitting diode package may further include a light transmissive protective member disposed above the wavelength conversion member. At this time, the molding member is formed to cover the side surface of the protective member in the short axis direction.
The display device of the embodiment of the invention comprises: a circuit board; a plurality of light emitting diode packages packaged on the circuit board to emit light; a light guide plate having an incident surface on which light of the light emitting diode package is incident; and a light shielding member covering the light emitting diode package and the incident surface of the light guide plate. Wherein the light emitting diode package includes: at least one light emitting diode chip emitting light; the wavelength conversion component is arranged above the light emitting diode chip, and the flat surface of the wavelength conversion component is of a regular quadrilateral structure; an adhesive member sandwiched between the light emitting diode chip and the wavelength conversion member; and a molding member surrounding the light emitting diode chip, the bonding member, and the wavelength conversion member. The molding member exposes a top surface of the wavelength conversion member and both side surfaces of the wavelength conversion member in a long axis direction. The top surface of the molding member, which exposes both side surfaces of the wavelength converting member, is higher than the top surface of the light emitting diode chip. In the display device, a thickness of a frame region including the circuit board, the light emitting diode package, and the light blocking member is 2mm or less.
The interval between the plurality of light emitting diode packages is smaller than the length of the light emitting diode packages.
The light emitting diode package is disposed such that a top surface of the light emitting diode package is opposite to the incident surface of the light guide plate.
According to an embodiment, the circuit board may be disposed such that a side surface of the circuit board is opposite to the incident surface of the light guide plate. At this time, the light emitting diode package is disposed such that a side surface of the light emitting diode package is opposite to a top surface of the circuit board.
According to another embodiment, the circuit board may be disposed such that a top surface of the circuit board is opposite to the incident surface of the light guide plate. At this time, the light emitting diode package is disposed such that a bottom surface of the light emitting diode package is opposite to a top surface of the circuit board.
The light emitting diode chip is a structure in which an electrode pad is positioned below.
According to an embodiment, the electrode pads of the light emitting diode chip may be exposed to the outside at the bottom surface of the molding part.
According to other embodiments, the display device may further include a lead frame disposed under the light emitting diode chip. At this time, a portion of the lead frame is connected to the electrode pad of the light emitting diode chip, and another portion of the lead frame protrudes outside the molding member.
According to another embodiment, the display device may further include a sub adhesive substrate disposed below the molding member, the sub adhesive substrate including a body portion and a lead frame formed on the body portion. At this time, in the display device, a portion of the lead frame is connected to the electrode pad of the light emitting diode chip.
The area of the flat surface of the wavelength conversion member is larger than the area of the flat surface of the light emitting diode chip.
The display device may further include a light transmissive protective member disposed above the wavelength conversion member. At this time, the molding member is formed to cover the side surface of the protective member in the short axis direction.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
Fig. 1 to 4 are explanatory views showing a light emitting diode package according to a first embodiment of the present invention.
Fig. 1 is a perspective view of a light emitting diode package 100 according to a first embodiment. Fig. 2 is a top view of the light emitting diode package 100 of the first embodiment. Fig. 3 is a first cross-sectional view of the light emitting diode package 100 of the first embodiment (a1-a 2). In addition, fig. 4 is a second sectional view of the light emitting diode package 100 of the first embodiment (B1-B2).
The light emitting diode package 100 of the first embodiment includes a light emitting diode chip 110, a wavelength conversion member 120, an adhesive member 130, and a molding member 140.
The light emitting diode chip 110 includes a growth substrate and a semiconductor stack. The growth substrate may be a substrate for growing a semiconductor layer. For example, the growth substrate may be a sapphire substrate or a gallium nitride substrate. The light emitting diode chip 110 does not necessarily include a growth substrate, and the growth substrate may be omitted. The semiconductor stack is formed of a gallium nitride compound semiconductor and emits light. In the present invention, the semiconductor stack emits visible light. For example, the semiconductor stack can emit light of blue color.
In addition, the light emitting diode chip 110 includes an electrode pad 111. The electrode pad 111 is positioned under the light emitting diode chip 110. Therefore, the light emitting diode chip 110 of the present embodiment can be electrically connected to an external component such as a circuit board (not shown) by Flip chip bonding.
The wavelength conversion member 120 is disposed above the light emitting diode chip 110. The wavelength conversion member 120 converts the wavelength of light emitted from the light emitting diode chip 110. For example, the wavelength conversion member 120 may be a member in which a fluorescent material for exciting light is dispersed in a light-transmissive resin.
As shown in fig. 3, the wavelength conversion member 120 is a structure covering the top surface of the light emitting diode chip 110. As shown in fig. 2, the flat surface of the wavelength conversion member 120 has a larger area than the flat surface of the light emitting diode chip 110. The flat surface of the wavelength conversion member 120 has a regular quadrilateral structure.
The light emitting diode package 100 can realize light of various colors such as white light according to the type of the wavelength conversion member 120.
The adhesive member 130 is sandwiched between the light emitting diode chip 110 and the wavelength conversion member 120. Such an adhesive member 130 improves the adhesion of the light emitting diode chip 110 and the wavelength conversion member 120. The adhesive member 130 transmits light and is made of a material having adhesive force. For example, the adhesive member 130 may be composed of silicone or epoxy.
The molding member 140 is formed to surround the light emitting diode chip 110, the wavelength conversion member 120, and the bonding member 130. At this time, the molding member 140 is formed so that the top surface of the wavelength conversion member 120 and both side surfaces in the longitudinal direction of the wavelength conversion member 120 are exposed. Therefore, the light emitting diode package 100 emits light to the outside on the top surface and both side surfaces in the long axis direction. Referring to the drawing, the top surface of the portion of the molding member 140 that exposes both side surfaces of the wavelength converting member 120 is higher than the top surface of the light emitting diode chip 110.
The molding member 140 is formed to cover the lower side of the light emitting diode chip 110, but to expose the electrode pad 111 of the light emitting diode chip 110 to the outside. Accordingly, the light emitting diode chip 110 disposed inside the light emitting diode package 100 may be electrically connected with an external constituent part through the electrode pad 111 exposed to the outside of the molding member 140.
The molding member 140 is formed of a material that transmits or reflects light emitted from the light emitting diode chip 110. For example, the molding member 140 may be formed of a general plastic (polymer), Acrylonitrile Butadiene Styrene (ABS), Liquid Crystal Polymer (LCP), Polyamide (PA), polyphenylene sulfide (IPS), thermoplastic elastomer (TPE), Epoxy Molding Compound (EMC), Silicone Molding Compound (SMC), metal, ceramic, or the like. The material of the molding member 140 is not limited to this, and may be formed of a material capable of cutting or reflecting light.
According to an embodiment of the present invention, the molding member 140 is configured as follows: both side surfaces of the wavelength converting member 120 having a longer length in the short axis direction are covered, and both side surfaces of the wavelength converting member 120 having a shorter length in the long axis direction are exposed to the outside.
The molding member 140 prevents light from being emitted to the outside through both long-length side surfaces of the wavelength conversion member 120. Accordingly, the molding member 140 directs the light emitted through the top surface of the light emitting diode package 100 in a certain direction by limiting the light pointing angle of the light emitting diode package 100 in the short axis direction. That is, the molding member 140 serves to guide light emitted through the top surface of the light emitting diode package 100 to enter an incident surface of a light guide plate (not shown).
In addition, the molding member 140 exposes both side surfaces of the wavelength conversion member 120 having a short length to the outside, and thus the light emitting diode package 100 emits light not only through the top surface but also through both side surfaces having a short length. That is, such a structure of the molding member 140 makes the light-directing angle in the long axis direction of the light emitting diode package 100 larger. Therefore, when the plurality of light emitting diode packages 100 are arranged in the longitudinal direction to mix light with the adjacent light emitting diode packages 100, the distance from the top surface of the light emitting diode package 100 to the light mixing position is shorter than before.
If the molding member 140 is formed such that both side surfaces of the light emitting diode package 100 are entirely exposed, all of the light emitted from the side surfaces of the light emitting diode chip 110 is emitted to the outside through the exposed side surfaces. In this case, the amount of light emitted through the main emission surface, i.e., the top surface, of the light emitting diode package 100 is reduced. When the amount of light emitted through the main emission surface of the light emitting diode package 100 decreases, the amount of light incident on the light guide plate (not shown) also decreases. Therefore, the light emitting diode package 100 according to the embodiment of the present invention has a structure in which only the wavelength conversion member 120 is exposed at a side surface other than the entire side surface in order to prevent a decrease in light efficiency while increasing the light directing angle in the long axis direction.
The light emitting diode package 100 according to the embodiment of the invention may be applied to a display device. In this case, the display device can reduce a space required for mixing light emitted from the plurality of light emitting diode packages 100 and having light uniformity of a certain degree or more.
Fig. 5 is a schematic view illustrating a conventional light emitting diode package. Fig. 6 is a graph illustrating a light directive angle of a conventional light emitting diode package. In addition, fig. 7 is a graph showing the light pointing angle of the light emitting diode package according to the first embodiment of the present invention.
Referring to fig. 5, the conventional light emitting diode package 10 is formed such that the molding member 14 surrounds the entire side surface of the wavelength conversion member 12 except for the top surface.
Referring to the light pointing angle graph (fig. 6) of such a conventional light emitting diode package 10, the full width at half maximum (FWHM) is 120deg. in both the major axis direction (x-axis) and the minor axis direction (y-axis).
Referring to the light directing angle graph of the light emitting diode package 100 of the first embodiment of the present invention shown in fig. 7, the full width at half maximum in the minor axis direction (y-axis) is 120deg. as in the prior art. However, the light emitting diode package 100 of the first embodiment has a full width at half maximum in the long axis direction (x-axis) of 135deg. and a wider light pointing angle than the related art.
That is, it is understood that the light emitting diode package 100 according to the first embodiment of the present invention spreads light more widely in the longitudinal direction than the conventional light emitting diode package 100.
In the following description of other embodiments, the same components as those of the previously described embodiments will be briefly described or omitted. Therefore, the detailed description of the components which are omitted or simplified will refer to the description of the previous embodiments.
Fig. 8 to 12 are explanatory views illustrating a method of manufacturing a light emitting diode package according to a first embodiment of the present invention.
First, the light emitting diode chip 110 is disposed on the support member 20 (see fig. 8).
In the process of manufacturing the light emitting diode package, any function of the support member 20 capable of fixing and supporting the constituent parts constituting the light emitting diode package can be performed.
In the next step, the wavelength conversion member 120 is bonded to the top surface of the light emitting diode chip 110 by the bonding member 130 (see fig. 9). The flat surface of the wavelength conversion member 120 has a larger area than the flat surface of the light emitting diode chip 110. Therefore, as shown in the cross section of fig. 9, the wavelength conversion member 120 protrudes further in the side direction than the light emitting diode chip 110.
In the next step, the molding member 140 is formed on the support member 20 so as to surround the light emitting diode chip 110, the adhesive member 130, and the wavelength conversion member 120 (see fig. 10).
In the next step, the molding member 140 located above the wavelength conversion member 120 is removed to expose the top surface of the wavelength conversion member 120 (refer to fig. 11). For example, the top surface of the wavelength converting member 120 may be exposed to the outside by cutting the molding member 140 along a cutting line c1 shown in fig. 10. Alternatively, the top surface of the wavelength conversion member 120 may be exposed to the outside by grinding the molding member 140 positioned above the wavelength conversion member 120. In addition to this, the top surface of the wavelength converting member 120 may be exposed to the outside in various ways.
In the next step, the molding member 140 is removed so that both side surfaces in the long axis direction of the wavelength conversion member 120 are exposed to the outside (see fig. 12). For example, both side surfaces of the wavelength conversion member 120 may be exposed to the outside by cutting the molding member 140 and the wavelength conversion member 120 along the cutting line c2 shown in fig. 11. At this time, both side surfaces of the wavelength conversion member 120 and the molding member 140 are removed so that the side surfaces of the light emitting diode chip 110 are not exposed to the outside. Therefore, the molding member 140 surrounds the light emitting diode chip 110, the adhesive member 130, and the wavelength conversion member 120, and exposes the top surface of the wavelength conversion member 120 and both side surfaces of the wavelength conversion member 120 in the longitudinal direction to the outside.
After that, the support member 20 is removed, thereby forming the light emitting diode package 100 shown in fig. 1 to 4. When the support member 20 is removed, the electrode pad 111 of the light emitting diode chip 110 is exposed to the outside.
The manufacturing method shown in fig. 8 to 12 is an example, and the manufacturing method of the light emitting diode package 100 is not limited thereto. The order of the manufacturing method may be changed or the light emitting diode chip 110 may be manufactured by another method as long as the structure of the molding member 140 of the present embodiment is provided.
Fig. 13 and 14 are explanatory views showing a light emitting diode package according to a second embodiment of the present invention.
The light emitting diode package 200 of the second embodiment includes a light emitting diode chip 110, a wavelength conversion member 120, an adhesive member 130, a molding member 140, and a protective member 210.
The protective member 210 is disposed to cover the top surface of the wavelength converting member 120. At this time, the molding member 140 covers the side surface of the protective member 210 in the short axis direction. The protective member 210 formed in this manner is made of a light-transmitting material. For example, the protective member 210 may be composed of silicone.
The protective member 210 cuts off foreign substances such as dust, moisture, and the like from entering the inside of the light emitting diode package 200 typified by the wavelength conversion member 120. Therefore, the light emitting diode package 200 of the present embodiment can prevent the occurrence of the malfunction caused by the foreign substance by the protective member 210.
In addition, the protective member 210 prevents the wavelength conversion member 120 from coming into contact with oxygen. That is, by the protective member 210, discoloration of the wavelength converting member 120 due to contact with oxygen may be minimized. Therefore, the light emitting diode package 200 of the present embodiment can prevent the quality of light emitted to the outside from being degraded due to discoloration of the wavelength conversion member 120. Further, the protective member 210 can prevent the color reproducibility of the display device to which the light emitting diode package 200 is applied from being lowered due to the discoloration of the wavelength conversion member 120.
Fig. 15 is an explanatory view showing a light emitting diode package of a third embodiment of the present invention.
The light emitting diode package 300 of the third embodiment includes a plurality of light emitting diode chips 110, a wavelength conversion member 120, an adhesive member 130, a molding member 140, and a protective member 210.
The plurality of light emitting diode chips 110 are arranged below one wavelength conversion member 120 in the long axis direction. Fig. 15 shows two light emitting diode chips 110, but the number of light emitting diode chips 110 arranged below one wavelength conversion member 120 may be variously changed.
The light emitting diode package 300 of the present embodiment arranges a plurality of light emitting diode chips 110 inside one molding part 140, thereby increasing the amount of light.
In addition, the plurality of light emitting diode chips 110 may emit light of different colors from each other. Therefore, the light emitting diode package 300 may emit white light by mixing the light of different colors emitted from the plurality of light emitting diode chips 110. At this time, the wavelength conversion member 120 may be omitted.
Fig. 16 is an explanatory view showing a light emitting diode package of a fourth embodiment of the present invention.
The light emitting diode package 400 of the fourth embodiment includes a light emitting diode chip 110, a wavelength conversion member 120, an adhesive member 130, a molding member 140, a protective member 210, and a lead frame 410.
The lead frame 410 is disposed under the light emitting diode chip 110. The lead frame 410 is formed of a conductive material such as metal. As shown in fig. 16, a portion of the lead frame 410 is connected to the electrode pad 111 of the light emitting diode chip 110 inside the molding member 140, and the other portion is exposed to the outside of the molding member 140. The portion exposed to the outside of the lead frame 410 is connected to an external component. Such a lead frame 410 electrically connects the light emitting diode chip 110 disposed inside the light emitting diode package 400 with an external constituent.
The lead frame 410 may have various structures as long as one portion is connected to the electrode of the light emitting diode chip 110 and the other portion is exposed to the outside of the molding member 140 to be connected to an external component. For example, the lead frame 410 may be a structure that is exposed to the outside only at the bottom surface of the molding member 140. Alternatively, the lead frame 410 may be a structure in which a portion exposed at the side surface of the molding member 140 or exposed at the bottom surface of the molding member 140 extends to cover the side surface.
The light emitting diode package 400 according to the embodiment of the present invention may be disposed on a circuit board (not shown) in various forms according to the structure of the lead frame 410.
Fig. 17 is an explanatory view showing a light emitting diode package of a fifth embodiment of the present invention.
The light emitting diode package 500 of the fifth embodiment includes a light emitting diode chip 110, a wavelength conversion member 120, an adhesive member 130, a molding member 140, a protective member 210, and a sub-adhesive substrate 510.
The sub-mount substrate 510 functions to electrically connect the light emitting diode chip 110 and an external component.
The sub-mount substrate 510 is disposed under the light emitting diode chip 110. The submount substrate 510 includes a body portion 511 and a lead frame 512.
The main body portion 511 may be composed of an insulating layer or a metal layer for heat dissipation and an insulating layer surrounding the metal layer.
Referring to fig. 17, lead frame 512 is formed along the side surfaces to the bottom surface of main body portion 511. However, the lead frame 512 may have any structure that can electrically connect the light emitting diode chip 110 and an external component.
The lead frame 512 is a portion connected to the electrode of the light emitting diode chip 110 and another portion connected to an external component. In the present embodiment, the portion of the lead frame 512 formed on the top surface of the body portion 511 is electrically connected to the electrode pad 111 of the light emitting diode chip 110 by being in contact with the inside of the molding member 140. In addition, the portion of lead frame 512 exposed to the side surface or bottom surface of main body portion 511 is in contact with an external component and electrically connected.
Fig. 18 and 19 are exemplary views illustrating light distribution of the light emitting diode package to the incident area of the light guide plate according to the embodiment of the present invention.
Referring to fig. 18, a plurality of light emitting diode packages 200 are arranged on a circuit board 610. Here, the light emitting diode package 200 is any one of the light emitting diode packages 200 of the first to fifth embodiments described previously.
According to the present embodiment, the interval L between the plurality of light emitting diode packages 200 is less than the length W of the light emitting diode packages 200. If the plurality of light emitting diode packages 200 are closely arranged, the light intersection distance d becomes short. Here, the light intersection point is a position where light emitted from the adjacent light emitting diode packages 200 is mixed. In addition, the light intersection point distance is a distance from the top surface of the light emitting diode package 200 to the light intersection point.
In addition, since the light emitting diode package 200 according to the embodiment of the present invention emits light also in a part of the side surface, the light directivity angle of light in the long axis direction is larger than that in the related art. Therefore, in the case where the interval between the adjacent light emitting diode packages 200 is the same as the related art, the light emitting diode package 200 of the present embodiment can shorten the light intersection point distance more than the related art.
Fig. 19 is a graph illustrating light uniformity based on the position of the light guide plate 620. It is confirmed that the closer the incident surface 621 of the light guide plate 620 is to the inside of the light guide plate 620, the more the light incident from the plurality of light emitting diode packages 200 is mixed with each other and the light distribution becomes uniform.
When the light uniformity of the light guide plate 620 is measured at regular intervals from the incident surface 621 of the light guide plate 620, the light uniformity at the incident surface 621 of the light guide plate 620 is 58.3%. The light uniformity at a distance of 0.5mm from the incident surface 621 of the light guide plate 620 was 77.8%. The light uniformity at a distance of 1mm from the incident surface 621 of the light guide plate 620 was 81.2%. In addition, the light uniformity at a distance of 1.5mm from the incident surface 621 of the light guide plate 620 was 91.2%. That is, according to the present embodiment, the light guide plate 620 may have a light uniformity of more than 90% in an area within 1.5mm from the incident surface 621. Therefore, the light emitting diode package 200 according to the embodiment of the present invention can reduce the incident area of the light guide plate 620 to an area within 1.5mm from the incident surface 621. Here, the incident region is a region required for mixing light incident to the plurality of light emitting diode packages 200 of the light guide plate 620 to have a certain level of light uniformity.
In this way, the light emitting diode package 200 according to the embodiment of the present invention can shorten the distance from the light intersection point with the adjacent light emitting diode package 200, thereby reducing the incident area of the light guide plate 620.
Fig. 20 and 21 are explanatory views showing a display device to which a light emitting diode package according to an embodiment of the present invention is applied.
The display devices 700 and 800 of the present embodiment include a display panel 760, a backlight unit and a light shielding member 750.
The display panel 760 includes a color filter substrate and a thin film transistor substrate. The display panel 760 may further include a liquid crystal layer between the color filter substrate and the thin film transistor substrate according to kinds. For driving, the display panel 760 includes a driver at one side.
The backlight unit supplies light to the display panel 760. The backlight unit includes a light guide plate 620, light emitting diode packages 200 and 400, a circuit board 610, an optical member 740, and a reflection member 720.
The light guide plate 620 converts point light emitted from the light emitting diode package 200 into surface light.
The light emitting diode packages 200 and 400 and the circuit board 610 are disposed at least one side of the light guide plate 620. The led packages 200 and 400 are packaged on one side of the circuit board 610. At this time, the top surfaces of the light emitting diode packages 200 and 400 and one side surface of the light guide plate 620 are disposed opposite to each other. Here, the top surface of the light emitting diode package 200 or 400 is an emission surface that emits light. A side surface of the light guide plate 620 facing the top surfaces of the light emitting diode packages 200 and 400 is an incident surface 621 on which light is incident.
In fig. 20, one surface of the circuit board 610 is disposed opposite to the incident surface 621 of the light guide plate 620. A light emitting diode package 200 shown in fig. 20 is a light emitting diode package of the second embodiment. Alternatively, the light emitting diode package 200 is the light emitting diode package of the first embodiment or the light emitting diode package of the third embodiment. The light emitting diode package 200 adapted in fig. 20 is arranged such that the top surface is opposite to the incident surface 621 of the light guide plate 620 and the bottom surface is in contact with one surface of the circuit board 610. Accordingly, the electrode pad 111 of the light emitting diode package 200 is in contact with the wiring formed on one surface of the circuit board 610, and the light emitting diode package 200 is electrically connected to the circuit board 610.
In fig. 21, one side surface of the circuit board 610 is disposed opposite to the incident surface 621 of the light guide plate 620. A light emitting diode package 400 shown in fig. 21 is a light emitting diode package of the fourth embodiment. The light emitting diode package 400 extends along a side surface with a lead frame 410 connected to the electrode pad. Accordingly, the side of the light emitting diode package 400 is in contact with one side of the circuit board 610. That is, the lead frame 410 extending to the side surface of the light emitting diode package 400 is in contact with and electrically connected to the wiring formed on one surface of the circuit board 610. The light emitting diode package 400 may also be the light emitting diode package of the fifth embodiment instead of the light emitting diode package of the fourth embodiment.
Although not shown in fig. 20 and 21, a conductive adhesive such as solder paste may be interposed to improve the adhesion between the circuit board 610 and the light emitting diode packages 200 and 400. The conductive adhesive material is located between the electrode pads of the light emitting diode packages 200 and 400 and the wires of the circuit board 610 or between the lead frame 410 and the wires of the circuit board 610, and improves the adhesion therebetween.
The optical member 740 is used to improve the brightness, the viewing angle, and the like of the display devices 700 and 800, and includes a reflective sheet, a diffusion sheet, a prism sheet, and the like.
The reflection member 720 is disposed under the light guide plate 620. The reflection member 720 reflects the light emitted through the bottom surface of the light guide plate 620 so as to face the top surface, i.e., the exit surface, of the light guide plate 620.
The light shielding member 750 plays a role of preventing light emitted from the backlight unit from being exposed to the outside. In addition, the light shielding member 750 also functions to fix the optical member 740.
The light shielding member 750 is formed over the light emitting diode packages 200 and 400 and the circuit board 610, and is formed to cover a portion of the optical member 740. At this time, in order to prevent light from leaking out near the incident surface of the light guide plate 620, the light shielding member 750 is disposed to cover the upper side of the incident surface 621 of the light guide plate 620.
In addition, the light shielding member 750 covers the upper side of the light mixing region of the plurality of light emitting diode packages 200 and 400 in the light guide plate 620. The light blocking member 750 covers the plurality of light mixing regions, and prevents a speckle phenomenon generated due to non-uniform light distribution from being displayed on the display panel 760.
Fig. 18 and 19 show that the light emitting diode packages 100, 200, 300, 400, and 500 according to the embodiments of the present invention can reduce the incident area of the light guide plate 620. Accordingly, the thickness of the light shielding member 750 covering the incident area of the light guide plate 620 can also be reduced compared to the related art. Here, the thickness of the light shielding member 750 is a length from one end of the light shielding member 750 covering the circuit board 610 to the other end of the covering optical member 740.
The areas excluding the display screens in the display devices 700 and 800 are frame areas (Bezel regions). The led chip 110, the circuit board 610, and the light shielding member 750 are disposed in the frame region.
Referring to fig. 18 and 19, the incident area of the light guide plate 620 is within 1.5mm from the incident surface 621. Therefore, the display devices 700 and 800 of the present embodiment can reduce the frame region to a thickness of about 2mm or less. Here, the thickness of the bezel region is a length from one end of the backlight unit to the other end of the light shielding member 750.
In this way, the display devices 700 and 800 to which the light emitting diode packages according to the embodiments of the present invention are applied can reduce the thickness of the bezel by reducing the incident area of the light guide plate 620. In addition, the display devices 700 and 800 reduce the distance from the light mixing position of the plurality of light emitting diode packages, and thus can prevent the occurrence of the screen mura phenomenon due to low uniformity of light.
Fig. 22 to 30 are explanatory views showing a light emitting diode package and a method of manufacturing the same according to a sixth embodiment of the present invention.
Referring to fig. 22 to 24, the wavelength conversion member 120 and the light emitting diode chip 110 are disposed on the support member 20. FIG. 23 is a cross-sectional view of FIG. 22 (A1-A2) and FIG. 24 is another cross-sectional view of FIG. 22 (B1-B2).
The wavelength conversion member 120 is bonded to the support member 20. For example, a plurality of wavelength conversion members 120 are formed in an array on the support member 20.
A plurality of light emitting diode chips 110 may be disposed on the plurality of wavelength conversion members 120. At this time, the bonding member 130 is coated on the light emitting diode chip 110.
The adhesive member 130 is applied to one surface of the led chip 110. The surface of the light emitting diode chip 110 coated with the adhesive member 130 is a surface opposite to the wavelength conversion member 120.
The adhesive member 130 may be a transparent resin having adhesive force. For example, the adhesive member 130 may be made of a light-transmitting material such as epoxy resin or silicone resin.
Fig. 25 and 26 show the light emitting diode chip 110 bonded to the wavelength conversion member 120.
The light emitting diode chip 110 coated with the adhesive member 130 is disposed on the wavelength conversion member 120. At this time, the light emitting diode chip 110 is pressed toward the wavelength conversion member 120 in order to bond the light emitting diode chip 110 and the wavelength conversion member 120. At this time, the adhesive member 130 having good fluidity is pushed out toward the side of the light emitting diode by the pressure. As shown in fig. 25 and 26, the adhesive member 130 extruded from the side of the light emitting diode chip 110 covers a part of the side surface of the light emitting diode chip 110 by surface tension.
Referring to fig. 27 to 29, a molding member 140 is formed on the support member 20.
The molding member 140 is formed to cover the wavelength conversion member 120, the adhesive member 130, and the light emitting diode chip 110. At this time, the molding member 140 is formed such that one surface of the electrode pad 111 of the light emitting diode chip 110 is exposed to the outside. In addition, the molding member 140 may be formed to be inclined around the electrode pad 111 of the light emitting diode chip 110. That is, a portion of the molding member 140 located at the periphery of the electrode pad 111 is formed to have a height lower than one surface of the electrode pad 111. Therefore, there is a structure in which the thickness of one portion of the molding member 140 is smaller than that of the other portion. Here, one surface of the electrode pad 111 is a surface facing the outside of the light emitting diode chip 110.
After that, if the supporting member 20 is removed by cutting between the light emitting diode chips 110 along the cutting lines, a single light emitting diode package 600 shown in fig. 30 is formed.
Referring to fig. 30, the light emitting diode package 600 is formed such that the adhesive member 130 covers not only the top surface of the light emitting diode chip 110 but also a portion of the side surface of the light emitting diode chip. The adhesive member 130 is formed of a curved surface with a side surface recessed. The light emitted from the side surface of the light emitting diode chip 110 covered with the adhesive member 130 can be reflected by the curved surface of the adhesive member 130 and directed upward. Accordingly, the light emitting diode package 600 can improve light extraction efficiency.
Fig. 31 to 37 are explanatory views showing a light emitting diode package and a method of manufacturing the same according to a seventh embodiment of the present invention.
As shown in fig. 31 to 33, a plurality of light emitting diode chips 110 are arranged on the wavelength conversion member 120 bonded to the support member 20. At this time, a pair of light emitting diode chips 110 are arranged close to each other.
The wavelength conversion member 120 and the light emitting diode chip 110 sandwich the adhesive member 130 therebetween. As the light emitting diode chip 110 is pressed toward the wavelength conversion member 120, a portion of the adhesive member 130 is pushed out in a lateral direction of the light emitting diode chip 110. At this time, the pair of light emitting diode chips 110 are present close to each other, and thus the pushed adhesive members 130 can be connected to each other. That is, as shown in fig. 32, the adhesive members 130 extruded from the respective light emitting diode chips 110 can contact each other between the pair of light emitting diode chips 110.
As shown in fig. 34 to 36, a molding member 140 that covers the wavelength conversion member 120, the adhesive member 130, and the light emitting diode chip 110 is formed on the support member 20.
After that, when the support member 20 is removed by performing a dicing process along the dicing lines, a light emitting diode package 700 including the pair of light emitting diode chips 110 as shown in fig. 37 is formed.
Fig. 38 to 44 are views relating to a light emitting diode package and a method of manufacturing the same according to an eighth embodiment of the present invention.
Referring to fig. 38 to 40, the protective member 210, the first wavelength conversion member 1121, and the second wavelength conversion member 1122 are formed in this order on the support member 20.
The protective member 210 may prevent foreign substances from entering into the inside of the light emitting diode package 800. In addition, the protection member 210 can prevent the first wavelength conversion member 1121 from being discolored by being in contact with oxygen. For example, the material of the protection member 210 may be silicone resin.
The first wavelength conversion member 1121 and the second wavelength conversion member 1122 are sequentially stacked on the protection member 210. For example, the first wavelength conversion member 1121 and the second wavelength conversion member 1122 may both be of the film type.
The first and second wavelength conversion members 1121 and 1122 can convert light emitted from the light emitting diode chip 110 into different wavelength bands from each other.
The first wavelength conversion member 1121 may be a light transmissive film in which a first wavelength conversion substance is dispersed. The second wavelength conversion member 1122 may be a light-transmitting film in which a second wavelength conversion substance is dispersed. The first wavelength converting substance and the second wavelength converting substance are different substances from each other. For example, the first wavelength conversion substance is a green phosphor, and the second wavelength conversion substance is a red phosphor. Therefore, the first wavelength conversion member 1121 excites at least a part of the light emitted from the light emitting diode chip 110 into green light. The second wavelength conversion member 1122 excites at least a part of the light emitted from the light emitting diode chip 110 into blue light.
The light emitting diode chip 110 coated with the adhesive member 130 is packaged on the second wavelength conversion member 1122. While the light emitting diode chip 110 is packaged, a portion of the bonding part 130 covers at least a portion of the side of the light emitting diode chip 110.
Referring to fig. 41 to 42, the molding member 140 is coated on the support member 20 so as to cover the protection member 210, the first wavelength conversion member 1121, the second wavelength conversion member 1122, the adhesive member 130, and the light emitting diode chip 110.
Thereafter, after the cutting between the light emitting diode chips 110, the support member 20 is removed, so that the light emitting diode package 800 as a separate package shown in fig. 43 can be formed.
Referring to fig. 43, the light emitting diode package 800 has a structure in which the first wavelength conversion member 1121 and the second wavelength conversion member 1122 are exposed to the outside on both side surfaces.
In addition, the light emitting diode package 800 shown in fig. 44 may be formed by grinding the upper side of the light emitting diode package 800 as needed.
Fig. 45 to 50 are views relating to a light emitting diode package and a method of manufacturing the same according to a ninth embodiment of the present invention.
Referring to fig. 45 to 47, the protection member 210 and the first wavelength conversion member 1121 are formed in this order on the support member 20.
The first wavelength conversion member 1121 may be a light transmissive film in which a first wavelength conversion substance is dispersed. For example, the first wavelength conversion substance may be a green phosphor that excites light emitted from the light emitting diode chip 110 into green light.
The light emitting diode chip 110 coated with the second wavelength conversion member 1123 may be disposed on the first wavelength conversion member 1121. The second wavelength conversion member 1123 may be coated on a surface of the light emitting diode chip 110 opposite to the first wavelength conversion member 1121.
The second wavelength conversion member 1123 may be a light-transmitting resin in which a second wavelength conversion substance is dispersed. For example, the second wavelength conversion substance may be a red phosphor that excites light of the light emitting diode chip 110 into red light. The light-transmitting resin may be a resin having adhesiveness and fluidity, such as an epoxy resin or a silicone resin. That is, the second wavelength conversion member 1123 may be an adhesive member in which the second wavelength conversion substance is dispersed.
Such a second wavelength conversion member 1123 can convert the wavelength of light from the light emitting diode chip 110 and can improve the adhesion between the light emitting diode chip 110 and the first wavelength conversion member 1121. Therefore, the light emitting diode package 900 of the present embodiment may omit the adhesive member by the second wavelength conversion member 1123.
When the light emitting diode chip 110 is packaged in the second wavelength conversion member 1123, a part of the second wavelength conversion member 1123 is pressed in the lateral direction of the light emitting diode chip 110, and can cover at least a part of the side surface of the light emitting diode chip 110.
Referring to fig. 48 and 49, the molding member 140 is applied to the support member 20 so as to cover the protection member 210, the first wavelength conversion member 1121, the second wavelength conversion member 1123, and the light emitting diode chip 110.
Thereafter, after the cutting between the light emitting diode chips 110, the support member 20 is removed, so that the light emitting diode package 900 as a separate package as shown in fig. 50 can be formed. At this time, a cutting work for separating into individual packages may be performed on the second wavelength conversion member 1123. Therefore, the light emitting diode package 900 separated into individual packages can expose the protective member 210, the first wavelength conversion member 1121, and the second wavelength conversion member 1123 on both side surfaces.
However, the structure of the present embodiment is not limited thereto. If the cutting process is performed at a position where the second wavelength conversion member 1123 is absent, it is possible to form the light emitting diode package of a structure in which the second wavelength conversion member 1123 is not exposed to the outside.
In addition, after the cutting process, a process of grinding over the light emitting diode package 900 may be performed or the grinding process may be omitted as needed.
As described above, the present invention is explained in detail by referring to the embodiments of the drawings, but the above embodiments are only the preferred embodiments illustrating the present invention, and thus it should not be construed that the present invention is limited only to the embodiments, and the scope of the present invention is to be construed as the claims and the equivalents thereof.
Claims (9)
1. A light emitting diode package, comprising:
at least one light emitting diode chip emitting light, and an electrode pad being present under the light emitting diode chip;
the wavelength conversion component is arranged above the light emitting diode chip, and the flat surface of the wavelength conversion component is of a regular quadrilateral structure;
an adhesive member sandwiched between the light emitting diode chip and the wavelength conversion member; and
a molding member surrounding the light emitting diode chip, the bonding member, and the wavelength conversion member,
the molding member exposes a top surface of the wavelength conversion member and both side surfaces of the wavelength conversion member in a long axis direction to the outside,
the molding part exposes the electrode pad of the light emitting diode chip to the outside,
the top surface of the molding member, which exposes both side surfaces of the wavelength converting member, is higher than the top surface of the light emitting diode chip.
2. The light emitting diode package of claim 1,
the light emitting diode package further includes a lead frame disposed under the light emitting diode chip,
a part of the lead frame is connected to the electrode pad of the light emitting diode chip, and another part of the lead frame protrudes to the outside of the molding member.
3. The light emitting diode package of claim 1,
the light emitting diode package further includes a sub-adhesive substrate disposed under the molding member, the sub-adhesive substrate including a main body portion and a lead frame formed on the main body portion,
a portion of the lead frame is connected to an electrode pad of the light emitting diode chip.
4. The light emitting diode package of claim 1,
the area of the flat surface of the wavelength conversion member is larger than the area of the flat surface of the light emitting diode chip.
5. The light emitting diode package of claim 1,
the light emitting diode package further includes a light transmissive protective member disposed above the wavelength conversion member,
the molding member is formed to cover a side surface in a short axis direction of the protection member.
6. The light emitting diode package of claim 1,
the bonding member covers at least a portion of a side surface of the light emitting diode chip and a top surface of the light emitting diode chip,
the side surface of the bonding member has a curved surface recessed toward the side surface of the light emitting diode chip.
7. The light emitting diode package of claim 1,
the wavelength conversion member includes:
a first wavelength conversion member containing a first wavelength conversion substance; and
and a second wavelength conversion member containing a second wavelength conversion substance, the second wavelength conversion member being positioned between the first wavelength conversion member and the adhesive member.
8. The light emitting diode package of claim 1,
the wavelength converting member contains a first wavelength converting substance,
the adhesive member contains a second wavelength converting substance.
9. The light emitting diode package of claim 1,
the molding member exposes both side surfaces of the adhesive member in the longitudinal direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910749687.1A CN110828638A (en) | 2018-08-14 | 2019-08-08 | Light emitting diode package and display device having the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020180095132A KR20200019514A (en) | 2018-08-14 | 2018-08-14 | Light emitting diode package and display device including the same |
| KR10-2018-0095132 | 2018-08-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910749687.1A Division CN110828638A (en) | 2018-08-14 | 2019-08-08 | Light emitting diode package and display device having the same |
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| Publication Number | Publication Date |
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| CN110828637A true CN110828637A (en) | 2020-02-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201910749687.1A Pending CN110828638A (en) | 2018-08-14 | 2019-08-08 | Light emitting diode package and display device having the same |
| CN201910728600.2A Pending CN110828637A (en) | 2018-08-14 | 2019-08-08 | Light emitting diode package and display device having the same |
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| CN201910749687.1A Pending CN110828638A (en) | 2018-08-14 | 2019-08-08 | Light emitting diode package and display device having the same |
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| KR (1) | KR20200019514A (en) |
| CN (2) | CN110828638A (en) |
| WO (1) | WO2020036320A1 (en) |
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| WO2022173005A1 (en) * | 2021-02-12 | 2022-08-18 | 味の素株式会社 | Light-emitting element package and method for manufacturing same |
| CN113659058B (en) * | 2021-08-20 | 2023-10-20 | 京东方科技集团股份有限公司 | Light-emitting device, preparation method thereof and display device |
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| US20110127558A1 (en) * | 2009-11-27 | 2011-06-02 | Young Sam Park | Light emitting diode package and method of manufacturing the same |
| CN102749757A (en) * | 2011-04-18 | 2012-10-24 | 友达光电股份有限公司 | Light leakproof display device and backlight module thereof |
| KR20130121204A (en) * | 2012-04-25 | 2013-11-06 | 엘지디스플레이 주식회사 | Led package and liquid crystal display device having the same |
| KR20140089765A (en) * | 2013-01-07 | 2014-07-16 | 엘지이노텍 주식회사 | A light emitting device package |
| CN205723605U (en) * | 2016-03-31 | 2016-11-23 | 首尔半导体股份有限公司 | Light-emitting component, include its light emitting module, back light unit and display device |
| KR20170064898A (en) * | 2015-12-02 | 2017-06-12 | 엘지이노텍 주식회사 | Light emitting device package |
| CN107039572A (en) * | 2016-02-03 | 2017-08-11 | 行家光电股份有限公司 | Have the light-emitting device and its manufacture method of asymmetry light shape |
| CN107316930A (en) * | 2016-04-25 | 2017-11-03 | 三星电子株式会社 | Light emitting semiconductor device |
| KR20170139942A (en) * | 2016-06-10 | 2017-12-20 | 서울반도체 주식회사 | Light emitting diode package and manufacturing method of the same |
| CN108206235A (en) * | 2016-12-16 | 2018-06-26 | 三星电子株式会社 | Semiconductor light-emitting apparatus |
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| US8746943B2 (en) * | 2007-11-08 | 2014-06-10 | Innovations In Optics, Inc. | LED backlighting system with closed loop control |
| WO2010053528A2 (en) * | 2008-11-06 | 2010-05-14 | Innovations In Optics, Inc. | Light emitting diode emergency lighting module |
| KR102516693B1 (en) * | 2016-04-29 | 2023-03-31 | 엘지디스플레이 주식회사 | Light emitting diode pakgage module and display device having the same |
-
2018
- 2018-08-14 KR KR1020180095132A patent/KR20200019514A/en not_active Application Discontinuation
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2019
- 2019-07-16 WO PCT/KR2019/008763 patent/WO2020036320A1/en active Application Filing
- 2019-08-08 CN CN201910749687.1A patent/CN110828638A/en active Pending
- 2019-08-08 CN CN201910728600.2A patent/CN110828637A/en active Pending
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| US20110127558A1 (en) * | 2009-11-27 | 2011-06-02 | Young Sam Park | Light emitting diode package and method of manufacturing the same |
| CN102749757A (en) * | 2011-04-18 | 2012-10-24 | 友达光电股份有限公司 | Light leakproof display device and backlight module thereof |
| KR20130121204A (en) * | 2012-04-25 | 2013-11-06 | 엘지디스플레이 주식회사 | Led package and liquid crystal display device having the same |
| KR20140089765A (en) * | 2013-01-07 | 2014-07-16 | 엘지이노텍 주식회사 | A light emitting device package |
| KR20170064898A (en) * | 2015-12-02 | 2017-06-12 | 엘지이노텍 주식회사 | Light emitting device package |
| CN107039572A (en) * | 2016-02-03 | 2017-08-11 | 行家光电股份有限公司 | Have the light-emitting device and its manufacture method of asymmetry light shape |
| CN205723605U (en) * | 2016-03-31 | 2016-11-23 | 首尔半导体股份有限公司 | Light-emitting component, include its light emitting module, back light unit and display device |
| CN107316930A (en) * | 2016-04-25 | 2017-11-03 | 三星电子株式会社 | Light emitting semiconductor device |
| KR20170139942A (en) * | 2016-06-10 | 2017-12-20 | 서울반도체 주식회사 | Light emitting diode package and manufacturing method of the same |
| CN108206235A (en) * | 2016-12-16 | 2018-06-26 | 三星电子株式会社 | Semiconductor light-emitting apparatus |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200019514A (en) | 2020-02-24 |
| CN110828638A (en) | 2020-02-21 |
| WO2020036320A1 (en) | 2020-02-20 |
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