CN110809825A - 薄膜晶体管及制备方法、显示装置 - Google Patents
薄膜晶体管及制备方法、显示装置 Download PDFInfo
- Publication number
- CN110809825A CN110809825A CN201780092185.5A CN201780092185A CN110809825A CN 110809825 A CN110809825 A CN 110809825A CN 201780092185 A CN201780092185 A CN 201780092185A CN 110809825 A CN110809825 A CN 110809825A
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- Prior art keywords
- thin film
- film transistor
- electrode
- insulating layer
- gate
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- 239000010409 thin film Substances 0.000 title claims abstract description 130
- 238000002360 preparation method Methods 0.000 title description 3
- 238000000034 method Methods 0.000 claims description 29
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 239000004973 liquid crystal related substance Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 7
- 239000000203 mixture Substances 0.000 claims description 4
- 230000000694 effects Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
提出了一种薄膜晶体管。该薄膜晶体管包括：栅极；栅绝缘层，所述栅绝缘层设置在所述栅极的上表面；有源层，所述有源层设置在所述栅绝缘层远离所述栅极的一侧；以及源极以及漏极，所述源极以及所述漏极设置在所述有源层远离所述栅绝缘层的一侧，所述源极以及所述漏极的至少之一，具有凸起以及凹槽的至少之一。
Description
PCT国内申请，说明书已公开。
Claims (15)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/116451 WO2019113937A1 (zh) | 2017-12-15 | 2017-12-15 | 薄膜晶体管及制备方法、显示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110809825A true CN110809825A (zh) | 2020-02-18 |
Family
ID=66819777
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780092185.5A Pending CN110809825A (zh) | 2017-12-15 | 2017-12-15 | 薄膜晶体管及制备方法、显示装置 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN110809825A (zh) |
| WO (1) | WO2019113937A1 (zh) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8785933B2 (en) * | 2011-03-04 | 2014-07-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN104124277B (zh) * | 2013-04-24 | 2018-02-09 | 北京京东方光电科技有限公司 | 一种薄膜晶体管及其制作方法和阵列基板 |
| CN104835851B (zh) * | 2015-05-13 | 2017-11-07 | 京东方科技集团股份有限公司 | 一种薄膜晶体管、阵列基板及显示装置 |
| CN106024909B (zh) * | 2016-07-27 | 2021-01-26 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制备方法、阵列基板和显示装置 |
-
2017
- 2017-12-15 WO PCT/CN2017/116451 patent/WO2019113937A1/zh active Application Filing
- 2017-12-15 CN CN201780092185.5A patent/CN110809825A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| WO2019113937A1 (zh) | 2019-06-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: Building 43, Dayun software Town, No. 8288 Longgang Avenue, Henggang street, Longgang District, Shenzhen City, Guangdong Province Applicant after: Shenzhen Ruoyu Technology Co.,Ltd. Address before: Building 43, Dayun software Town, No. 8288 Longgang Avenue, Henggang street, Longgang District, Shenzhen City, Guangdong Province Applicant before: SHENZHEN ROYOLE TECHNOLOGIES Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200218 |
|
| RJ01 | Rejection of invention patent application after publication |