CN110808324A - 一种led芯片倒装方法 - Google Patents
一种led芯片倒装方法 Download PDFInfo
- Publication number
- CN110808324A CN110808324A CN201911114630.0A CN201911114630A CN110808324A CN 110808324 A CN110808324 A CN 110808324A CN 201911114630 A CN201911114630 A CN 201911114630A CN 110808324 A CN110808324 A CN 110808324A
- Authority
- CN
- China
- Prior art keywords
- led chip
- circuit board
- chip
- driving circuit
- led
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0075—Processes relating to semiconductor body packages relating to heat extraction or cooling elements
Abstract
本发明提供一种LED芯片倒装方法,涉及LED灯技术领域。该LED芯片倒装方法,包括以下步骤:S1、首先在制作驱动线路板的基材上,通过冲压机在LED芯片的封装位置冲出透光孔,其中驱动线路板的基材包括铜箔层与PI层;S2、然后将LED芯片直接倒着封装在驱动线路板的基材上,制作出驱动线路板,在透光孔的边缘引出LED芯片焊接的线路;S3、在LED芯片背面贴合导热性能良好的散热片。通过直接将LED芯片1倒装在驱动线路板上形成产品,流程简化,成本降低;不使用压焊工艺,不需要引脚以及连接的细金线或铝线,成本降低;LED芯片1产生的热量直接传导到线路板上,再散发到空气中,热传导途径短,散热效率高,延长LED灯的寿命。
Description
技术领域
本发明涉及LED灯技术领域,具体为一种LED芯片倒装方法。
背景技术
LED节能灯作为一种新型的照明光源,以环保、节能、反应时间快、寿命长等特点,受到人们的青睐及国家的大力扶持,LED是一种半导体固体发光器件,它是利用固体半导体芯片作为发光材料,当两端加上正向电压,引起光子发射而产生光,目前市场上的白光LED灯是由发蓝光的LED芯片+荧光粉形成的,目前,家庭用电是220V50Hz的交流电,而LED使用的电源是低压直流电源,由于电源不同,LED不能直接使用,必须经过驱动电路进行降压、稳压、整流、滤波、恒流后才能使用。
传统正装LED一般使用银胶将LED芯片固定在LED引脚的支架上,然后通过压焊工艺,用很细的金线或铝线将LED芯片的两个电极分别与引脚的正负极焊接,然后使用掺杂荧光粉的封装胶进行封装、固化,以固定、保护LED芯片,得到封装完成的单个LED灯之后,将封装好的LED灯通过引脚装配到相应的驱动线路板上进行使用,但是传统技术中存在着如下缺陷与不足:
1、需要通过压焊工艺,使用很细的金线或铝线来连接LED芯片和引脚,成本高且工艺复杂;
2、LED芯片产生的热量通过细金属线以及银胶传递到引脚上,再由引脚传递到线路板上,进而散发到空气中,热传导途径长,散热效果差;
3、热量积累将影响LED芯片及荧光粉可靠性,使产品寿命降低;
4、由于荧光粉使用量较大且荧光粉成本较高,导致LED灯的生产成本较高。
发明内容
(一)解决的技术问题
针对现有技术的不足,本发明提供了一种LED芯片倒装方法,解决了现有技术中的缺陷与不足。
(二)技术方案
为实现以上目的,本发明通过以下技术方案予以实现:一种LED芯片倒装方法,包括以下步骤:
S1、首先在制作驱动线路板的基材上,通过冲压机在LED芯片的封装位置冲出透光孔,其中驱动线路板的基材包括铜箔层与PI层;
S2、然后将LED芯片直接倒着封装在驱动线路板的基材上,制作出驱动线路板,在透光孔的边缘引出LED芯片焊接的线路;
S3、在LED芯片背面贴合导热性能良好的散热片,然后将LED芯片的芯片电极直接焊接在驱动线路板的线路上;
S4、在LED芯片发光面的透光孔内填充荧光粉封装胶,然后在LED芯片周围填充普通封装胶并固化。
优选的,所述铜箔层的厚度为2μm~35μm。
优选的,所述PI层的厚度为5μm~200μm。
(三)有益效果
本发明提供了一种LED芯片倒装方法。具备以下有益效果:
1、在LED驱动线路板上预先冲出透光孔,LED芯片发出的光可直接通过透光孔照射出去。
2、直接将LED芯片倒装在驱动线路板上形成产品,流程由传统的LED芯片-封装-产品变为LED芯片-产品,流程简化,成本降低。
3、不使用压焊工艺,不需要引脚以及连接的细金线或铝线,成本降低。
4、LED芯片产生的热量直接传导到线路板上,再散发到空气中,热传导途径短,散热效率高,延长LED灯的寿命。
5、将导热性能良好的散热片直接贴合在LED芯片背面,热传导快,且散热面积大,进一步提高散热效果,延长LED灯的寿命。
6、只在LED芯片发光面的透光孔中填充荧光粉封装胶,其他位置使用普通封装胶进行封装,减少荧光粉的使用量,降低成本。
7、LED发光面的荧光粉封装胶厚度很薄,透光性更好,能够提高LED灯的亮度。
附图说明
图1为本发明结构示意图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
实施例:
如图1所示,本发明实施例提供一种LED芯片倒装方法,包括以下步骤:
S1、首先在制作驱动线路板的基材上,通过冲压机在LED芯片1的封装位置冲出透光孔3,其中驱动线路板的基材包括铜箔层4与PI层5,铜箔层4的厚度为2μm~35μm,PI层5的厚度为5μm~200μm,在LED驱动线路板上预先冲出透光孔3,LED芯片1发出的光可直接通过透光孔3照射出去;
S2、然后将LED芯片1直接倒着封装在驱动线路板的基材上,制作出驱动线路板,在透光孔3的边缘引出LED芯片1焊接的线路;
S3、在LED芯片1背面贴合导热性能良好的散热片8,然后将LED芯片1的芯片电极2直接焊接在驱动线路板的线路上,将导热性能良好的散热片8直接贴合在LED芯片1背面,热传导快,且散热面积大,进一步提高散热效果,延长LED灯的寿命;
S4、在LED芯片1发光面的透光孔3内填充荧光粉封装胶6,然后在LED芯片1周围填充普通封装胶7并固化,以固定、保护LED芯片1,只在LED芯片1发光面的透光孔3中填充荧光粉封装胶6,其他位置使用普通封装胶7进行封装,减少荧光粉的使用量,降低成本。
直接将LED芯片1倒装在驱动线路板上形成产品,流程由传统的芯片-封装-产品变为芯片-产品,流程简化,成本降低;不使用压焊工艺,不需要引脚以及连接的细金线或铝线,成本降低;LED芯片1产生的热量直接传导到线路板上,再散发到空气中,热传导途径短,散热效率高,延长LED灯的寿命。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。
Claims (3)
1.一种LED芯片倒装方法,其特征在于:包括以下步骤:
S1、首先在制作驱动线路板的基材上,通过冲压机在LED芯片的封装位置冲出透光孔,其中驱动线路板的基材包括铜箔层与PI层;
S2、然后将LED芯片直接倒着封装在驱动线路板的基材上,制作出驱动线路板,在透光孔的边缘引出LED芯片焊接的线路;
S3、在LED芯片背面贴合导热性能良好的散热片,然后将LED芯片的芯片电极直接焊接在驱动线路板的线路上;
S4、在LED芯片发光面的透光孔内填充荧光粉封装胶,然后在LED芯片周围填充普通封装胶并固化。
2.根据权利要求1所述的一种LED芯片倒装方法,其特征在于:所述铜箔层的厚度为2μm~35μm。
3.根据权利要求1所述的一种LED芯片倒装方法,其特征在于:所述PI层的厚度为5μm~200μm。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911114630.0A CN110808324A (zh) | 2019-11-14 | 2019-11-14 | 一种led芯片倒装方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911114630.0A CN110808324A (zh) | 2019-11-14 | 2019-11-14 | 一种led芯片倒装方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN110808324A true CN110808324A (zh) | 2020-02-18 |
Family
ID=69502724
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201911114630.0A Pending CN110808324A (zh) | 2019-11-14 | 2019-11-14 | 一种led芯片倒装方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN110808324A (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008218674A (ja) * | 2007-03-02 | 2008-09-18 | Toyoda Gosei Co Ltd | Led発光表示装置 |
CN102174999A (zh) * | 2011-02-25 | 2011-09-07 | 江苏永兴多媒体有限公司 | Led灯板的生产方法 |
CN104538529A (zh) * | 2014-12-31 | 2015-04-22 | 江阴长电先进封装有限公司 | 一种低成本的led封装结构及其晶圆级封装方法 |
CN205845954U (zh) * | 2016-07-22 | 2016-12-28 | 肇庆市欧迪明科技有限公司 | 一种高压覆晶led芯片 |
US20180053883A1 (en) * | 2016-08-22 | 2018-02-22 | Toyoda Gosei Co.. Ltd. | Light-emitting device and method of manufacturing the same |
-
2019
- 2019-11-14 CN CN201911114630.0A patent/CN110808324A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008218674A (ja) * | 2007-03-02 | 2008-09-18 | Toyoda Gosei Co Ltd | Led発光表示装置 |
CN102174999A (zh) * | 2011-02-25 | 2011-09-07 | 江苏永兴多媒体有限公司 | Led灯板的生产方法 |
CN104538529A (zh) * | 2014-12-31 | 2015-04-22 | 江阴长电先进封装有限公司 | 一种低成本的led封装结构及其晶圆级封装方法 |
CN205845954U (zh) * | 2016-07-22 | 2016-12-28 | 肇庆市欧迪明科技有限公司 | 一种高压覆晶led芯片 |
US20180053883A1 (en) * | 2016-08-22 | 2018-02-22 | Toyoda Gosei Co.. Ltd. | Light-emitting device and method of manufacturing the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107170733B (zh) | Led灯丝及其led球泡灯 | |
TWI331814B (zh) | ||
CN101696790A (zh) | 一种大功率led散热封装结构 | |
WO2013086794A1 (zh) | 柔性电路基板led二维阵列光源 | |
CN102032483B (zh) | Led面光源 | |
CN201868429U (zh) | 一种内嵌式发光二极管封装结构 | |
CN102709281A (zh) | 一种双荧光薄膜双面出光平面薄片式led阵列光源 | |
CN203309586U (zh) | 一种基于印刷电路板的led光源模组 | |
CN202473912U (zh) | 无电路基板led阵列光源 | |
CN110808324A (zh) | 一种led芯片倒装方法 | |
CN2852395Y (zh) | 一种集成于红绿蓝三芯片的硅芯片 | |
CN103307483A (zh) | 基于印刷电路板的led光源模组 | |
CN209298156U (zh) | 一种led灯pcb光源板组件 | |
CN202024144U (zh) | 一种超低衰减高效率led灯具 | |
CN206480624U (zh) | 一种fpc板光源封装结构 | |
CN202384336U (zh) | 一种led光源模组 | |
CN210040256U (zh) | 一种高散热led基板 | |
CN110808327A (zh) | 一种led倒装封装结构及制作方法 | |
RU79215U1 (ru) | Светодиодное полупроводниковое устройство, предназначенное для сборки методом поверхностного монтажа | |
CN216120342U (zh) | 一种led模组及电子设备 | |
CN104235663A (zh) | 一种led软灯条的生产工艺 | |
CN217740532U (zh) | 一种芯片的封装结构、显示屏、灯具以及电子设备 | |
CN218939723U (zh) | 高亮度cob封装结构以及led灯 | |
CN220209002U (zh) | 一种纳米光芯片节能led结构 | |
CN210778592U (zh) | 一种舞台灯光源 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
RJ01 | Rejection of invention patent application after publication | ||
RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200218 |