CN110767746A - 一种在位生长介质层作为帽层的hemt结构及其制作方法 - Google Patents
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Abstract
本发明公开了一种在位生长介质层作为帽层的HEMT结构,该HEMT结构从下至上依次包括:SiC衬底、成核层、缓冲层、沟道层、插入层、势垒层、盖帽层和介质层;其中,所述介质层为SiN层,其厚度不超过300μm;本发明还公开了该HEMT结构的制作方法。本发明则采用在位生长的方式制作SiN介质层,在高真空度的MOCVD腔室内,直接在HEMT结构材料的表面生长介质层,可以有效地避免因为分布沉积介质层所引入的颗粒玷污。
Description
技术领域
本发明属于半导体技术领域,具体涉及一种在位生长介质层作为帽层的HEMT结构及其制作方法。
背景技术
氮化镓作为第三代宽禁带半导体的典型代表,具有优良的物理和化学特性,非常适于研制高频、高压、高功率的器件和电路,采用氮化镓研制的高电子迁移率晶体管(HEMT),电流密度大,功率密度高,噪声低,频率特性好,在军用和民用的微波功率领域有广泛的应用前景。
在GaN基HEMT的制作工艺过程中,为了降低器件漏电,改善栅特性,一般采用SiN材料作为钝化层和栅下介质层材料,目前SiN介质层主要采用PECVD或LPCVD的方法来制作,将外延材料清洗后放入PECVD或LPCVD腔室中进行生长,清洗过程以及暴露在空气的过程中,有可能使器件受到颗粒的玷污,从而影响器件的性能。
发明内容
针对现有技术中存在的问题,本发明的目的在于提供一种在位生长介质层作为帽层的HEMT结构,此结构在传统的HEMT结构表面,直接通过MOCVD在位生长的方式沉积SiN介质层。本发明的另一目的在于提供一种在位生长介质层作为帽层的HEMT结构的制作方法。
为实现上述目的,本发明采用以下技术方案:
一种在位生长介质层作为帽层的HEMT结构,所述HEMT结构从下至上依次包括:SiC衬底、成核层、缓冲层、沟道层、插入层、势垒层、盖帽层和介质层;其中,所述介质层为SiN层,其厚度不超过300μm。
进一步,所述成核层为GaN或AlN或AlGaN,厚度为0.01-0.50μm。
进一步,所述缓冲层为AlxGa1-xN,其中0≤x≤0.1,厚度为100nm-3000nm。
进一步,所述沟道层为GaN,厚度为10nm-100nm。
进一步,所述插入层为AlN,厚度为1nm-10nm。
进一步,所述势垒层为AlxGa1-xN,其中0≤x≤0.3,厚度为5nm-30nm。
进一步,所述盖帽层为GaN,厚度为1nm-10nm。
进一步,所述SiN层直接通过MOCVD在位生长的方式沉积而成。
一种制作在位生长介质层作为帽层的HEMT结构的方法,所述方法包括如下步骤:
步骤1:选择一衬底,该衬底材料为SiC材料;
步骤2:在所述衬底上生长一层成核层,该成核层为GaN或AlN或AlGaN,厚度为0.01-0.50μm;
步骤3:在所述成核层上生长缓冲层,材料为AlxGa1-xN,0≤x≤0.20,厚度为100nm-3000nm,生长温度为950℃-1150℃,生长压力为5.33 kPa -26.67kPa;
步骤4:在所述缓冲层上生长沟道层,该沟道层为GaN,厚度为10nm-100nm;
步骤5:在所述沟道层上生长插入层,该插入层生长厚度为1nm-10nm;
步骤6:在所述插入层上生长势垒层,该势垒层材料为AlxGa1-xN, 其中0≤x≤0.3,厚度为5nm-30nm;
步骤7:在所述势垒层上生长盖帽层,该盖帽层为GaN,厚度为1nm-10nm;
步骤8:在所述盖帽层上生长介质层,该介质层为SiN,厚度不超过300μm。
进一步,在所述衬底上生长各层的方法包括但不局限于金属有机物化学气相沉积法、分子束外延、气相外延和等离子体增强化学气相沉积法。
本发明具有以下有益技术效果:
本发明则采用在位生长的方式制作SiN介质层,在高真空度的MOCVD腔室内,直接在HEMT结构材料的表面生长介质层,可以有效地避免因为分布沉积介质层所引入的颗粒玷污。
附图说明
图1为本发明在位生长介质层作为帽层的HEMT结构的结构示意图;
图2为本发明在位生长介质层作为帽层的HEMT结构的制作方法的流程图。
具体实施方式
下面,参考附图,对本发明进行更全面的说明,附图中示出了本发明的示例性实施例。然而,本发明可以体现为多种不同形式,并不应理解为局限于这里叙述的示例性实施例。而是,提供这些实施例,从而使本发明全面和完整,并将本发明的范围完全地传达给本领域的普通技术人员。
如图1所示,本发明提供了一种在位生长介质层作为帽层的HEMT结构,该 HEMT结构从下至上依次包括:SiC衬底、成核层、缓冲层、沟道层、插入层、势垒层、盖帽层和介质层;其中,介质层为SiN层,其厚度不超过300μm。
本申请的成核层为GaN或AlN或AlGaN,厚度为0.01-0.50μm;缓冲层为AlxGa1-xN,其中0≤x≤0.1,厚度为100nm-3000nm;沟道层为GaN,厚度为10nm-100nm;插入层为AlN,厚度为1nm-10nm;势垒层为AlxGa1-xN,其中0≤x≤0.3,厚度为5nm-30nm;盖帽层为GaN,厚度为1nm-10nm;SiN层直接通过MOCVD在位生长的方式沉积而成。
如图2所示,本发明提供了一种在位生长介质层作为帽层的HEMT结构的制作方法,该方法包括如下步骤:
步骤1:选择一衬底,该衬底材料为SiC材料;
步骤2:在衬底上生长一层成核层,该成核层为GaN或AlN或AlGaN,厚度为0.01-0.50μm;
步骤3:在成核层上生长缓冲层,材料为AlxGa1-xN,0≤x≤0.20,厚度为100nm-3000nm,生长温度为950℃-1150℃,生长压力为5.33 kPa -26.67kPa;
步骤4:在缓冲层上生长沟道层,该沟道层为GaN,厚度为10nm-100nm;
步骤5:在沟道层上生长插入层,该插入层生长厚度为1nm-10nm;
步骤6:在插入层上生长势垒层,该势垒层材料为AlxGa1-xN, 其中0≤x≤0.3,厚度为5nm-30nm;
步骤7:在势垒层上生长盖帽层,该盖帽层为GaN,厚度为1nm-10nm;
步骤8:在盖帽层上生长介质层,该介质层为SiN,厚度不超过300μm。
在衬底上生长各层的方法包括但不局限于金属有机物化学气相沉积法、分子束外延、气相外延和等离子体增强化学气相沉积法;优先采用金属有机物化学气相沉积法。
上面所述只是为了说明本发明,应该理解为本发明并不局限于以上实施例,符合本发明思想的各种变通形式均在本发明的保护范围之内。
Claims (10)
1.一种在位生长介质层作为帽层的HEMT结构,其特征在于,所述HEMT结构从下至上依次包括:SiC衬底、成核层、缓冲层、沟道层、插入层、势垒层、盖帽层和介质层;其中,所述介质层为SiN层,其厚度不超过300μm。
2.根据权利要求1所述的在位生长介质层作为帽层的HEMT结构,其特征在于,所述成核层为GaN或AlN或AlGaN,厚度为0.01-0.50μm。
3.根据权利要求1所述的在位生长介质层作为帽层的HEMT结构,其特征在于,所述缓冲层为AlxGa1-xN,其中0≤x≤0.1,厚度为100nm-3000nm。
4.根据权利要求1所述的在位生长介质层作为帽层的HEMT结构,其特征在于,所述沟道层为GaN,厚度为10nm-100nm。
5.根据权利要求1所述的在位生长介质层作为帽层的HEMT结构,其特征在于,所述插入层为AlN,厚度为1nm-10nm。
6.根据权利要求1所述的在位生长介质层作为帽层的HEMT结构,其特征在于,所述势垒层为AlxGa1-xN,其中0≤x≤0.3,厚度为5nm-30nm。
7.根据权利要求1所述的在位生长介质层作为帽层的HEMT结构,其特征在于,所述盖帽层为GaN,厚度为1nm-10nm。
8.根据权利要求1所述的在位生长介质层作为帽层的HEMT结构,其特征在于,所述SiN层直接通过MOCVD在位生长的方式沉积而成。
9.一种制作权利要求1-8任一所述的在位生长介质层作为帽层的HEMT结构的方法,其特征在于,所述方法包括如下步骤:
步骤1:选择一衬底,该衬底材料为SiC材料;
步骤2:在所述衬底上生长一层成核层,该成核层为GaN或AlN或AlGaN,厚度为0.01-0.50μm;
步骤3:在所述成核层上生长缓冲层,材料为AlxGa1-xN,0≤x≤0.20,厚度为100nm-3000nm,生长温度为950℃-1150℃,生长压力为5.33 kPa -26.67kPa;
步骤4:在所述缓冲层上生长沟道层,该沟道层为GaN,厚度为10nm-100nm;
步骤5:在所述沟道层上生长插入层,该插入层生长厚度为1nm-10nm;
步骤6:在所述插入层上生长势垒层,该势垒层材料为AlxGa1-xN, 其中0≤x≤0.3,厚度为5nm-30nm;
步骤7:在所述势垒层上生长盖帽层,该盖帽层为GaN,厚度为1nm-10nm;
步骤8:在所述盖帽层上生长介质层,该介质层为SiN,厚度不超过300μm。
10.根据权利要求9所述的在位生长介质层作为帽层的HEMT结构的制作方法,其特征在于,在所述衬底上生长各层的方法包括但不局限于金属有机物化学气相沉积法、分子束外延、气相外延和等离子体增强化学气相沉积法。
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CN102130160A (zh) * | 2011-01-06 | 2011-07-20 | 西安电子科技大学 | 槽形沟道AlGaN/GaN增强型HEMT器件及制作方法 |
CN102810564A (zh) * | 2012-06-12 | 2012-12-05 | 程凯 | 一种射频器件及其制作方法 |
CN105789047A (zh) * | 2016-05-13 | 2016-07-20 | 中国科学院半导体研究所 | 一种增强型AlGaN/GaN高电子迁移率晶体管的制备方法 |
CN106229345A (zh) * | 2016-09-08 | 2016-12-14 | 西安电子科技大学 | 叠层栅介质GaN基绝缘栅高电子迁移率晶体管及制作方法 |
CN106328701A (zh) * | 2016-11-24 | 2017-01-11 | 苏州能屋电子科技有限公司 | 基于双层盖帽层结构的ⅲ族氮化物hemt器件及其制作方法 |
CN107240605A (zh) * | 2017-06-23 | 2017-10-10 | 北京华进创威电子有限公司 | 一种GaN MIS沟道HEMT器件及制备方法 |
CN108666216A (zh) * | 2018-05-15 | 2018-10-16 | 西安电子科技大学 | 基于叠层钝化结构的hemt器件及其制备方法 |
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CN112635551A (zh) * | 2020-12-18 | 2021-04-09 | 西安电子科技大学 | 一种GaN异质结材料及其制作方法 |
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