CN110767641A - High-power LED device - Google Patents
High-power LED device Download PDFInfo
- Publication number
- CN110767641A CN110767641A CN201911249106.4A CN201911249106A CN110767641A CN 110767641 A CN110767641 A CN 110767641A CN 201911249106 A CN201911249106 A CN 201911249106A CN 110767641 A CN110767641 A CN 110767641A
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- led chip
- led device
- high power
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- 239000000758 substrate Substances 0.000 claims abstract description 158
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 239000010949 copper Substances 0.000 claims abstract description 13
- 230000017525 heat dissipation Effects 0.000 claims abstract description 12
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 6
- 229910052737 gold Inorganic materials 0.000 claims abstract description 6
- 239000010931 gold Substances 0.000 claims abstract description 6
- 238000009413 insulation Methods 0.000 claims abstract description 3
- 229910000679 solder Inorganic materials 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 3
- 238000004806 packaging method and process Methods 0.000 abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/641—Heat extraction or cooling elements characterized by the materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a high-power LED device, which comprises a plurality of substrates, LED chips electrically connected with the substrates, and insulating sheets for insulating the substrates from each other; the insulation sheets are arranged on the outer sides of the substrates so as to enable adjacent substrates to be mutually insulated; the substrate is connected with a power supply to enable the LED chip to be conducted. According to the invention, the LED chip is directly welded on the substrate, and the substrate is the copper plate plated with the gold layer, so that the heat dissipation efficiency of the LED chip is high. Under the same LED chip packaging density, compared with the prior art, the current drive can be improved by 1.5 times, and the drive power can be obviously improved.
Description
Technical Field
The invention relates to the technical field of LEDs, in particular to a high-power LED device.
Background
The conventional high-power LED COB package is generally to package an LED on a substrate (including substrates of aluminum, copper, aluminum nitride and the like), then fix the substrate on a heat dissipation assembly, and the heat dissipation assembly transfers heat generated during the operation of the LED to a heat dissipation medium in a heat conduction manner to achieve the heat dissipation and cooling effects of the LED. Since the thermal conductivity between the substrate insulating layer and the heat dissipating assembly and the substrate is low, the heat transfer efficiency of the final LED is very low, and if it is desired that the LED operates at a higher power per unit light emitting area, it is necessary to increase the thermal conductivity between the LED and the heat dissipating assembly, thereby increasing the heat dissipating efficiency.
The existing substrate is used for single heat conduction only for the LED chip and cannot be used for other purposes, so that the structure of the LED device is complex.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a high-power LED device.
In order to achieve the purpose, the invention adopts the following technical scheme:
a high-power LED device comprises a plurality of substrates, LED chips electrically connected with the substrates, and insulating sheets for insulating the substrates from each other; the insulation sheets are arranged on the outer sides of the substrates so as to enable adjacent substrates to be mutually insulated; the substrate is connected with a power supply to enable the LED chip to be conducted.
The further technical scheme is as follows: the substrate comprises a positive electrode substrate connected with a positive electrode of a power supply and a negative electrode substrate connected with a negative electrode of the power supply; one wiring terminal of the LED chip is connected with the anode substrate or the cathode substrate, and the other wiring terminal of the LED chip is connected with the cathode substrate or the anode substrate.
The further technical scheme is as follows: the positive electrode substrate and the negative electrode substrate are mutually overlapped and arranged, and the positive electrode substrate and the negative electrode substrate are insulated through an insulating sheet.
The further technical scheme is as follows: the substrate is a copper plate; and a gold plating layer is arranged on the outer side of the copper plate.
The further technical scheme is as follows: the LED chip is arranged on the end face of the substrate; the LED chip is welded on the end face of the anode substrate or the cathode substrate through solder paste to form a terminal, and the other terminal of the LED chip is connected with the adjacent cathode substrate or the anode substrate through a lead.
The further technical scheme is as follows: the positive electrode substrate is provided with a convex part; the negative electrode substrate is provided with a concave part; when the positive electrode substrate and the negative electrode substrate are mutually overlapped, the concave part is matched with the convex part.
The further technical scheme is as follows: the outer sides of the plurality of substrates are mutually superposed and extend in the transverse direction, so that mounting planes are formed on two sides of the plurality of substrates; the mounting plane is provided with a heat dissipation plate.
The further technical scheme is as follows: and an optical component is arranged on the outer side of the LED chip.
The further technical scheme is as follows: and a fixing seat is arranged at one end of the substrate far away from the LED chip so as to fix the substrates.
The further technical scheme is as follows: one end of the substrate, which is far away from the LED chip, is provided with two connector lugs; one of the connector lug is connected with the positive electrode substrate, and the other connector lug is connected with the negative electrode substrate.
Compared with the prior art, the invention has the beneficial effects that: according to the invention, the LED chip is directly welded on the substrate, and the substrate is the copper plate plated with the gold layer, so that the heat dissipation efficiency of the LED chip is high. Under the same LED chip packaging density, compared with the prior art, the current drive can be improved by 1.5 times, and the drive power can be obviously improved.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented according to the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more apparent, the following detailed description will be given of preferred embodiments.
Drawings
FIG. 1 is a perspective view of a high power LED apparatus of the present invention;
FIG. 2 is a side view of a high power LED apparatus of the present invention;
FIG. 3 is a perspective view and a partial enlarged view of a high power LED device of the present invention with a portion of the heat sink removed;
fig. 4 is an assembly view and a partial enlarged view of a substrate of a high power LED device according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in detail with reference to the accompanying drawings and the detailed description.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be connected or detachably connected or integrated; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above should not be understood to necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by one skilled in the art.
FIGS. 1 to 4 are drawings of the present invention.
The present embodiment provides a high power LED device, please refer to fig. 1 to 3, which includes a plurality of substrates 10, LED chips 11 electrically connected to the substrates 10, and insulating sheets 12 for insulating the substrates 10 from each other. The insulating sheet 12 is disposed outside the substrates 10 to insulate the adjacent substrates 10 from each other. The substrate 10 is connected to a power supply to turn on the LED chip 11. The insulating sheet 12 is wrapped outside the substrate 10 so that the substrate 10 is insulated.
The insulating sheet 12 may be a resin or other insulating material capable of bonding the adjacent substrates 10 together.
Referring to fig. 1 to 3, the substrate 10 includes a positive substrate 101 connected to a positive electrode of a power supply, and a negative substrate 102 connected to a negative electrode of the power supply. One terminal of the LED chip 11 is connected to the positive electrode substrate 101 or the negative electrode substrate 102, and the other terminal is connected to the negative electrode substrate 102 or the positive electrode substrate 101. The LED chip 11 is connected between the positive electrode substrate 101 and the negative electrode substrate 102 so as to form a circuit.
The positive electrode substrate 101 and the negative electrode substrate 102 are disposed to be superimposed on each other, and the positive electrode substrate 101 and the negative electrode substrate 102 are insulated from each other by an insulating sheet 12.
The LED chip 11 is provided on an end surface of the substrate 10. The LED chip 11 is soldered to an end surface of the positive substrate 101 or the negative substrate 102 by solder paste to form one terminal, and the other terminal of the LED chip 11 is connected to the adjacent negative substrate 102 or the positive substrate 101 by a wire. The lower ends of the negative electrode substrate 102 and the positive electrode substrate 101 are fixed by screws, so that the negative electrode substrate 102 and the positive electrode substrate 101 are overlapped with each other to form a whole.
Preferably, the end surface of the LED chip 11 fixed to the substrate 10 is a large end, has a large area, and can be used not only as a heat dissipation end but also as an electrode end. The LED chip 11 is fixed on the positive electrode substrate 101, the positive electrode substrate 101 is electrified, heat of the LED chip 11 in the working process is conducted to the positive electrode substrate 101 through the end face of the positive electrode substrate 101, and a lead arranged on the side edge of the LED chip 11 is connected with the adjacent negative electrode substrate 102, so that the LED chip 11 forms a loop. The substrate 10 functions as an electrode and also functions as a heat conductor. The LED chips 11 are connected to the positive electrode substrate 101 at one end and the negative electrode substrate 102 at the other end, so that the LED chips 11 are connected in parallel between the positive electrode substrate 101 and the negative electrode substrate 102.
Referring to fig. 3 to 4, the positive substrate 101 has a protrusion 1011, and the negative substrate 102 has a recess 1021. When the positive substrate 101 and the negative substrate 102 are stacked, the concave portion 1021 and the convex portion 1011 match with each other.
Alternatively, the negative electrode substrate 102 is provided with a convex portion 1011, and the positive electrode substrate 101 is provided with a concave portion 1021.
Referring to fig. 1 to 4, the outer sides of the plurality of substrates 10 are stacked and extend in a transverse direction, so that mounting planes 13 are formed on two sides of the plurality of substrates 10, and the mounting planes 13 are provided with heat dissipation plates 14. Since the convex portions 1011 of the positive electrode substrates 101 are engaged with the concave portions 1021 of the negative electrode substrates 102, the two positive electrode substrates 101 and the negative electrode substrates 102 are stacked in opposite directions and expanded to the left and right sides, so that the two sides of the substrate 10 form a plane, i.e., the mounting plane 13. The heat sink 14 is closely attached to the mounting surface 13, so that heat of the substrate 10 can be conducted to the heat sink 14, and thus, the heat on the substrate 10 can be taken away. The heat dissipation plate 14 may be air-cooled or water-cooled.
Preferably, the substrate 10 is a copper plate, and a gold plating layer is disposed on the outer side of the copper plate.
In order to improve the utilization rate of the LED light, an optical assembly 15 is disposed outside the LED chip 11. The optical element 17 is made of transparent materials, so that light rays emitted by the LED chip 11 can be better diffused, and the utilization rate is improved.
Referring to fig. 1 to 3, a fixing base 16 is disposed at an end of the substrate 10 away from the LED chip 11, so that the substrates 10 are fixed to each other. The fixing base 16 is provided with a mounting groove so that the positive electrode substrate 101 and the negative electrode substrate 102 are inserted into the mounting groove after being stacked. The fixing portion 16 is provided with a fixing hole for locking the stacked positive electrode substrate 101 and negative electrode substrate 102.
One end of the substrate 10, which is far away from the LED chip 11, is provided with two connector lugs 17; one of the terminals 17 is connected to the positive electrode substrate 101, and the other terminal 17 is connected to the negative electrode substrate 102.
After the LED chip 11 is powered on, the LED chip 11 generates a large amount of heat. The LED chip 11 of the device is directly welded on the substrate 10, the generated heat can be conducted to the substrate 10, and the heat of the substrate 10 is radiated from the radiator 14. The substrate 10 not only serves as a conductor of heat conduction but also serves as an electrode of the LED chip 11 for supplying power to the LED chip 11.
The LED chip 11 is directly soldered on the copper substrate 10, and the solder between the substrate 10 and the LED chip 11 is solder paste. The solder paste comprises tin, silver and copper. The thermal conductivity of tin, silver and red copper is 67, 429 and 407W/M K respectively, so that the thermal conductivity of the solder is better than 67W/M K. Other formulations of solder having higher thermal conductivity may also be used. The thermal conductivity of the existing better aluminum-based circuit board is less than 8W/M K.
Compared with the prior art, the LED chip is directly welded on the substrate, and the substrate is the copper plate plated with the gold layer, so that the LED chip has high heat dissipation efficiency. Under the same LED chip packaging density, compared with the prior art, the current drive can be improved by 1.5 times, and the drive power can be obviously improved.
The technical contents of the present invention are further illustrated by the examples only for the convenience of the reader, but the embodiments of the present invention are not limited thereto, and any technical extension or re-creation based on the present invention is protected by the present invention. The protection scope of the invention is subject to the claims.
Claims (10)
1. A high-power LED device is characterized by comprising a plurality of substrates, LED chips electrically connected with the substrates, and insulating sheets for insulating the substrates from each other; the insulation sheets are arranged on the outer sides of the substrates so as to enable adjacent substrates to be mutually insulated; the substrate is connected with a power supply to enable the LED chip to be conducted.
2. The high power LED device as claimed in claim 1, wherein the substrate comprises a positive substrate connected to the positive electrode of the power supply, a negative substrate connected to the negative electrode of the power supply; one wiring terminal of the LED chip is connected with the anode substrate or the cathode substrate, and the other wiring terminal of the LED chip is connected with the cathode substrate or the anode substrate.
3. The high power LED device as claimed in claim 2, wherein the positive substrate and the negative substrate are stacked on each other and insulated by an insulating sheet.
4. A high power LED device according to claim 3, wherein said substrate is a copper plate; and a gold plating layer is arranged on the outer side of the copper plate.
5. The high power LED device as claimed in claim 3, wherein the LED chip is disposed on the end surface of the substrate; the LED chip is welded on the end face of the anode substrate or the cathode substrate through solder paste to form a terminal, and the other terminal of the LED chip is connected with the adjacent cathode substrate or the anode substrate through a lead.
6. A high power LED device according to claim 3, wherein the anode substrate is provided with a protrusion; the negative electrode substrate is provided with a concave part; when the positive electrode substrate and the negative electrode substrate are mutually overlapped, the concave part is matched with the convex part.
7. The high power LED device as claimed in claim 1, wherein the outer sides of the plurality of substrates are stacked and extended in a transverse direction so that the two sides of the plurality of substrates form a mounting plane; the mounting plane is provided with a heat dissipation plate.
8. The high power LED device as claimed in claim 1, wherein the LED chip is provided with an optical component on the outer side.
9. The high power LED device as claimed in claim 1, wherein the substrate is provided with a fixing base at an end thereof away from the LED chip, so that the plurality of substrates are fixed to each other.
10. The high power LED device as claimed in claim 9, wherein the substrate has two terminals at an end thereof away from the LED chip; one of the connector lug is connected with the positive electrode substrate, and the other connector lug is connected with the negative electrode substrate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911249106.4A CN110767641A (en) | 2019-12-09 | 2019-12-09 | High-power LED device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201911249106.4A CN110767641A (en) | 2019-12-09 | 2019-12-09 | High-power LED device |
Publications (1)
Publication Number | Publication Date |
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CN110767641A true CN110767641A (en) | 2020-02-07 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201911249106.4A Pending CN110767641A (en) | 2019-12-09 | 2019-12-09 | High-power LED device |
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CN (1) | CN110767641A (en) |
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2019
- 2019-12-09 CN CN201911249106.4A patent/CN110767641A/en active Pending
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