CN110808243A - High-power thermoelectric separation type LED device and LED light source module - Google Patents

High-power thermoelectric separation type LED device and LED light source module Download PDF

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Publication number
CN110808243A
CN110808243A CN201911249095.XA CN201911249095A CN110808243A CN 110808243 A CN110808243 A CN 110808243A CN 201911249095 A CN201911249095 A CN 201911249095A CN 110808243 A CN110808243 A CN 110808243A
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CN
China
Prior art keywords
substrate
led
separation type
thermoelectric separation
power thermoelectric
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CN201911249095.XA
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Chinese (zh)
Inventor
张炳忠
刘新
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Shenzhen Runwo Automation Engineering Co Ltd
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Shenzhen Runwo Automation Engineering Co Ltd
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Priority to CN201911249095.XA priority Critical patent/CN110808243A/en
Publication of CN110808243A publication Critical patent/CN110808243A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/641—Heat extraction or cooling elements characterized by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Device Packages (AREA)

Abstract

The invention discloses a high-power thermoelectric separation type LED device and an LED light source module. A high-power thermoelectric separation type LED device comprises a substrate, a plurality of LED chips fixed on the substrate, and electrode plates arranged on two sides of the substrate; the LED chips are connected in series and are electrically connected with the electrode plates after being connected in series; and the heat dissipation end of the LED chip is fixedly connected with the surface of the substrate. According to the invention, the LED chip is directly welded on the substrate, and the substrate is the copper plate plated with the gold layer, so that the heat dissipation efficiency of the LED chip is high. The substrate is not used as a conductive electrode of the LED chip, heat dissipation and electrode separation are achieved, the failure rate is reduced, and the service life is prolonged. Under the same LED chip packaging density, compared with the prior art, the current drive can be improved by 1.5 times, and the drive power can be obviously improved.

Description

High-power thermoelectric separation type LED device and LED light source module
Technical Field
The invention relates to the technical field of LEDs, in particular to a high-power thermoelectric separation type LED device and an LED light source module.
Background
The conventional high-power LED COB package is generally to package an LED on a substrate (including substrates of aluminum, copper, aluminum nitride and the like), then fix the substrate on a heat dissipation assembly, and the heat dissipation assembly transfers heat generated during the operation of the LED to a heat dissipation medium in a heat conduction manner to achieve the heat dissipation and cooling effects of the LED. Since the thermal conductivity between the substrate insulating layer and the heat dissipating assembly and the substrate is low, the heat transfer efficiency of the final LED is very low, and if it is desired that the LED operates at a higher power per unit light emitting area, it is necessary to increase the thermal conductivity between the LED and the heat dissipating assembly, thereby increasing the heat dissipating efficiency.
The existing LED device is not easy to extend and install when a module is formed. In actual use, the heat conducting and the electric conducting components are on one component, and are easy to generate faults.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a high-power thermoelectric separation type LED device and an LED light source module.
In order to achieve the purpose, the invention adopts the following technical scheme:
a high-power thermoelectric separation type LED device comprises a substrate, a plurality of LED chips fixed on the substrate, and electrode plates arranged on two sides of the substrate; the LED chips are connected in series and are electrically connected with the electrode plates after being connected in series; and the heat dissipation end of the LED chip is fixedly connected with the surface of the substrate.
The further technical scheme is as follows: the LED chip is arranged on the end face of the substrate; and a heat conduction layer is arranged between the end face of the substrate and the LED chip.
The further technical scheme is as follows: the heat conduction layer is a tin paste layer.
The further technical scheme is as follows: and a gold-plated layer is arranged on the end surface of the substrate connected with the LED chip.
The further technical scheme is as follows: a groove for mounting the electrode plate is formed in the side edge of the substrate; the outer side of the electrode plate is wrapped with an insulating layer.
The further technical scheme is as follows: and radiators are arranged on two sides of the substrate.
The further technical scheme is as follows: and an optical element is arranged at one end of the substrate close to the LED chip.
The further technical scheme is as follows: the substrate is a copper plate.
An LED light source module comprises a plurality of LED devices; the LED devices are mutually overlapped or spliced, and the substrates are mutually insulated to form the LED light source module.
The further technical scheme is as follows: the outer side of the substrate is wrapped by an insulating layer, so that the LED devices between adjacent LED devices are mutually insulated.
Compared with the prior art, the invention has the beneficial effects that: according to the invention, the LED chip is directly welded on the substrate, and the substrate is the copper plate plated with the gold layer, so that the heat dissipation efficiency of the LED chip is high. The substrate is not used as a conductive electrode of the LED chip, heat dissipation and electrode separation are achieved, the failure rate is reduced, and the service life is prolonged. Under the same LED chip packaging density, compared with the prior art, the current drive can be improved by 1.5 times, and the drive power can be obviously improved.
The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented according to the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more apparent, the following detailed description will be given of preferred embodiments.
Drawings
Fig. 1 is a perspective view of a high power thermoelectric separation type LED device according to the present invention;
FIG. 2 is a perspective view and a partial enlarged view of a high power thermoelectric separation type LED device of the present invention with optical elements removed;
FIG. 3 is an assembly view of an LED chip and a substrate of a high power thermoelectric separation type LED device according to the present invention;
fig. 4 is a perspective view of a high power thermoelectric separation type LED device with a heat sink according to the present invention;
FIG. 5 is a schematic diagram of a LED light source module according to the present invention;
fig. 6 is a stacked three-dimensional structure diagram of an LED light source module according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in detail with reference to the accompanying drawings and the detailed description.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be connected or detachably connected or integrated; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above should not be understood to necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples described in this specification can be combined and combined by one skilled in the art.
FIGS. 1 to 6 are drawings of the present invention.
The embodiment provides a high-power thermoelectric separation type LED device, please refer to fig. 1 to 3, which comprises a substrate 10, a plurality of LED chips 11 fixed on the substrate 10, and electrode plates 12 arranged at two sides of the substrate 10; the plurality of LED chips 11 are connected in series and electrically connected to the electrode sheet 12 after being connected in series to form a circuit. The heat dissipation end of the LED chip 11 is fixedly coupled to the surface of the substrate 10. The LED chips 11 are connected in series in sequence by leads. Preferably, a plurality of LED chips 11 are arranged in a line on the substrate 10.
Preferably, the end surface of the substrate 10 may be provided with a plurality of rows of the LED chips 11.
The LED chip 11 is provided on an end surface of the substrate 10. The heat conduction layer 13 is arranged between the end face of the substrate 10 and the LED chip 11, so that the LED chip 11 can conduct heat efficiently.
Preferably, the electrode plate 12 is made of copper, and is used for being connected with a power supply to supply power to the LED chip 11 group.
Preferably, the heat conductive layer 13 is a solder paste layer. The LED chip 11 is directly soldered on the substrate 10, and the solder between the substrate 10 and the bottom layer of the LED chip 11 is tin paste, and contains tin, silver and copper. The thermal conductivity of tin, silver and red copper is 67W/M K, 429W/M K and 407W/M K respectively, so that the thermal conductivity of the mixed solder is better than 67W/M K. Other formulations of solder having higher thermal conductivity may also be used. The thermal conductivity of the existing better aluminum-based circuit board is less than 8W/M K.
The gold plating layer 14 is arranged on the end face of the substrate 10 connected with the LED chip 11, so that the heat conductivity between the LED chip 11 and the substrate 10 is enhanced.
The side of the substrate 10 is provided with a groove 101 for mounting the electrode sheet 12. The electrode plate 12 is covered with an insulating layer 15 so that the electrode plate 12 and the substrate 10 are insulated from each other. And, the electrode sheet 12 is installed in the groove 101, so that both sides of the substrate 10 are flush, and conveniently extend to both sides. Wherein, the insulating layer is resin or other heat-resistant insulating materials.
Preferably, referring to fig. 4, for better heat dissipation of the substrate 10, heat sinks 16 are disposed on both sides of the substrate 10. The heat sink 16 may be air-cooled or water-cooled.
In order to improve the utilization rate of the LED light, the substrate 10 is provided with an optical element 17 at an end close to the LED chip 11. The optical element 17 is made of transparent materials, so that light rays emitted by the LED chip 11 can be better diffused, and the utilization rate is improved.
Preferably, the substrate 10 is a copper plate. The copper plate has better heat-conducting property. The LED chip 11 is fixed on the end face of the copper plate, and the end face is plated with a gold layer to improve the heat conduction performance. The one end of LED chip 11 and copper contact is the main aspects, and is easy to assemble, can also increase heat conduction area for LED chip 11 can be rapidly with heat conduction to base plate 10 on.
The leads of the LED chips 11 are located at both sides, the bottom surface is connected to the substrate 10, and when the LED chips are connected to the adjacent LED chips 11, the leads are directly connected to the side surfaces of the adjacent LED chips 11.
An LED light source module, please refer to fig. 5 and 6, including a plurality of the LED devices Q; the plurality of LED devices Q are mutually overlapped or spliced, and the substrates 10 are mutually insulated to form the LED light source module. The LED devices Q may be stacked in multiple layers, with the substrate 10 between each layer being relatively insulated from each other. The heat sink 16 is disposed on the substrate 10 at the outer side, and the substrates 10 between each other can conduct heat mutually, so that the heat sink 16 can dissipate the heat of the whole LED light source module.
When the LED light source modules are spliced, one side of the LED device Q, which is provided with the groove 101, is connected with one side of the adjacent LED device Q, which is provided with the groove 101, so that the LED device Q is expanded to the left side and the right side.
Preferably, the substrates 10 are wrapped with an insulating layer to insulate the LED devices Q from each other, and the substrates 10 may be bonded and fixed to each other.
Wherein, the insulating layer is resin or other heat-resistant insulating materials.
Compared with the prior art, the LED chip is directly welded on the substrate, and the substrate is the copper plate plated with the gold layer, so that the LED chip has high heat dissipation efficiency. The substrate is not used as a conductive electrode of the LED chip, heat dissipation and electrode separation are achieved, the failure rate is reduced, and the service life is prolonged. Under the same LED chip packaging density, compared with the prior art, the current drive can be improved by 1.5 times, and the drive power can be obviously improved.
The technical contents of the present invention are further illustrated by the examples only for the convenience of the reader, but the embodiments of the present invention are not limited thereto, and any technical extension or re-creation based on the present invention is protected by the present invention. The protection scope of the invention is subject to the claims.

Claims (10)

1. A high-power thermoelectric separation type LED device is characterized by comprising a substrate, a plurality of LED chips fixed on the substrate, and electrode plates arranged on two sides of the substrate; the LED chips are connected in series and are electrically connected with the electrode plates after being connected in series; and the heat dissipation end of the LED chip is fixedly connected with the surface of the substrate.
2. The high-power thermoelectric separation type LED device according to claim 1, wherein the LED chip is disposed on an end surface of the substrate; and a heat conduction layer is arranged between the end face of the substrate and the LED chip.
3. A high power thermoelectric separation type LED device according to claim 2, wherein said heat conducting layer is a solder paste layer.
4. The high-power thermoelectric separation type LED device as claimed in claim 2, wherein the end surface of the substrate connected with the LED chip is provided with a gold plating layer.
5. The high-power thermoelectric separation type LED device according to claim 1, wherein the substrate is provided with a groove at a side thereof for mounting an electrode pad; the outer side of the electrode plate is wrapped with an insulating layer.
6. The high power thermoelectric separation type LED device according to claim 1, wherein the substrate is provided with heat sinks at both sides thereof.
7. The high power thermoelectric separation type LED device as claimed in claim 1, wherein the substrate is provided with an optical element at an end close to the LED chip.
8. The high power thermoelectric separation type LED device according to claim 1, wherein the substrate is a copper plate.
9. An LED light source module, comprising a plurality of high power thermoelectric separation type LED devices according to any one of claims 1 to 8; and the plurality of high-power thermoelectric separation type LED devices are mutually overlapped or spliced, and the substrates are mutually insulated to form the LED light source module.
10. The LED light source module as claimed in claim 9, wherein the substrate is coated with an insulating layer to insulate the adjacent high power thermoelectric separation LED devices from each other.
CN201911249095.XA 2019-12-09 2019-12-09 High-power thermoelectric separation type LED device and LED light source module Pending CN110808243A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201911249095.XA CN110808243A (en) 2019-12-09 2019-12-09 High-power thermoelectric separation type LED device and LED light source module

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201911249095.XA CN110808243A (en) 2019-12-09 2019-12-09 High-power thermoelectric separation type LED device and LED light source module

Publications (1)

Publication Number Publication Date
CN110808243A true CN110808243A (en) 2020-02-18

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201911249095.XA Pending CN110808243A (en) 2019-12-09 2019-12-09 High-power thermoelectric separation type LED device and LED light source module

Country Status (1)

Country Link
CN (1) CN110808243A (en)

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